publicationDate,title,abstract,id 2016-07-11,Low loss spin wave resonances in organic-based ferrimagnet vanadium tetracyanoethylene thin films,"We experimentally demonstrate high quality factor spin wave resonances in an encapsulated thin film of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_\textit{x~2}$) coated on an a-plane sapphire substrate by low temperature chemical vapor deposition. The thickness standing wave modes are observed in a broad frequency range (1 GHz ~ 5 GHz) with high quality factor exceeding 3,200 in ambient air at room temperature, rivaling those of inorganic magnetic materials. The exchange constant of V[TCNE]$_\textit{x~2}$, a crucial material parameter for future study and device design of the V[TCNE]$_\textit{x~2}$, is extracted from the measurement with a value of $(4.61\pm 0.35)\times 10^{-16} \mathrm{\: m^{2}}$. Our result establishes the feasibility of using organic-based materials for building hybrid magnonic devices and circuits.",1607.03041v2 2021-01-25,Raman Spectroscopy and Aging of the Low-Loss Ferrimagnet Vanadium Tetracyanoethylene,"Vanadium tetracyanoethylene (V[TCNE]$_{x}$, $x\approx 2$) is an organic-based ferrimagnet with a high magnetic ordering temperature $\mathrm{T_C>600 ~K}$, low magnetic damping, and growth compatibility with a wide variety of substrates. However, similar to other organic-based materials, it is sensitive to air. Although encapsulation of V[TCNE]$_{x}$ with glass and epoxy extends the film lifetime from an hour to a few weeks, what is limiting its lifetime remains poorly understood. Here we characterize encapsulated V[TCNE]$_{x}$ films using confocal microscopy, Raman spectroscopy, ferromagnetic resonance and SQUID magnetometry. We identify the relevant features in the Raman spectra in agreement with \textit{ab initio} theory, reproducing $\mathrm{C=C,C\equiv N}$ vibrational modes. We correlate changes in the effective dynamic magnetization with changes in Raman intensity and in photoluminescence. Based on changes in Raman spectra, we hypothesize possible structural changes and aging mechanisms in V[TCNE]$_x$. These findings enable a local optical probe of V[TCNE]$_{x}$ film quality, which is invaluable in experiments where assessing film quality with local magnetic characterization is not possible.",2101.10240v1 2019-10-11,"Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned, High-$Q$ Vanadium Tetracyanoethylene Magnon Cavities","Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($\alpha = 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene ($\mathrm{V[TCNE]}_x$) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of $\mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, $A_{ex} = 2.2 \pm 0.5 \times 10^{-10}$ erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of $\mathrm{V[TCNE]}_x$ for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.",1910.05325v1 2023-08-18,"Magnon Diffusion Length and Longitudinal Spin Seebeck Effect in Vanadium Tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$)","Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studied systems that do not encompass the full phase space of phenomenology predicted by fundamental theory. Here we present an important advance in this coupled theory-experiment challenge, wherein we extend existing theories of the spin Seebeck effect (SSE) to explicitly include the temperature-dependence of magnon non-conserving processes. This expanded theory quantitatively describes the low-temperature behavior of SSE signals previously measured in the mainstay material yttrium iron garnet (YIG) and predicts a new regime for magnonic and spintronic materials that have low saturation magnetization, $M_S$, and ultra-low damping. Finally, we validate this prediction by directly observing the spin Seebeck resistance (SSR) in the molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$). These results validate the expanded theory, yielding SSR signals comparable in magnitude to YIG and extracted magnon diffusion length ($\lambda_m>1$ $\mu$ m) and magnon lifetime for V[TCNE]$_x$ ($\tau_{th}\approx 1-10$ $\mu$ s) exceeding YIG ($\tau_{th}\sim 10$ ns). Surprisingly, these properties persist to room temperature despite relatively low spin wave stiffness (exchange). This identification of a new regime for highly efficient SSE-active materials opens the door to a new class of magnetic materials for spintronic and magnonic applications.",2308.09752v1 2009-07-02,Tuning Molecule-Mediated Spin Coupling in Bottom-Up Fabricated Vanadium-TCNE Nanostructures,"We have fabricated hybrid magnetic complexes from V atoms and tetracyanoethylene (TCNE) ligands via atomic manipulation with a cryogenic scanning tunneling microscope. Using tunneling spectroscopy we observe spin-polarized molecular orbitals as well as Kondo behavior. For complexes having two V atoms, the Kondo behavior can be quenched for different molecular arrangements, even as the spin-polarized orbitals remain unchanged. This is explained by variable spin-spin (i.e., V-V) ferromagnetic coupling through a single TCNE molecule, as supported by density functional calculations.",0907.0490v1 2019-12-15,Magnon-photon strong coupling for tunable microwave circulators,"We present a generic theoretical framework to describe non-reciprocal microwave circulation in a multimode cavity magnonic system and assess the optimal performance of practical circulator devices. We show that high isolation (> 56 dB), extremely low insertion loss (< 0.05 dB), and flexible bandwidth control can be potentially realized in high-quality-factor superconducting cavity based magnonic platforms. These circulation characteristics are analyzed with materials of different spin densities. For high-spin-density materials such as yttrium iron garnet, strong coupling operation regime can be harnessed to obtain a broader circulation bandwidth. We also provide practical design principles for a highly integratible low-spin-density material (vanadium tetracyanoethylene) for narrow-band circulator operation, which could benefit noise-sensitive quantum microwave measurements. This theory can be extended to other coupled systems and provide design guidelines for achieving tunable microwave non-reciprocity for both classical and quantum applications.",1912.07128v2 2019-01-10,Spin-wave Confinement and Coupling in Organic-Based Magnetic Nanostructures,"Vanadium tetracyanoethylene (V[TCNE]$_\text{x}$) is an organic-based ferrimagnet that exhibits robust magnetic ordering (T$_\text{C}$ of over 600 K), high quality-factor (high-Q) microwave resonance (Q up to 3,500), and compatibility with a wide variety of substrates and encapsulation technologies. Here, we substantially expand the potential scope and impact of this emerging material by demonstrating the ability to produce engineered nanostructures with tailored magnetic anisotropy that serve as a platform for the exploration of cavity magnonics, revealing strongly coupled quantum confined standing wave modes that can be tuned into and out of resonance with an applied magnetic field. Specifically, time-domain micromagnetic simulations of these nanostructures faithfully reproduce the experimentally measured spectra, including the quasi-uniform mode and higher-order spin-wave (magnon) modes. Finally, when the two dominant magnon modes present in the spectra are brought into resonance by varying the orientation of the in-plane magnetic field, we observe anti-crossing behavior indicating strong coherent coupling between these two magnon modes at room temperature. These results position V[TCNE]$_\text{x}$ as a leading candidate for the development of coherent magnonics, with potential applications ranging from microwave electronics to quantum information.",1901.03286v2 2020-03-09,Predicted strong coupling of solid-state spins via a single magnon mode,"We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-damping, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly, the cooperativity will be higher using this magnetic material than in more conventional materials with larger magnetic moments, due to in part to the reduced demagnetization field. For reasonable experimental parameters, we predict that the spin-magnon-mode coupling strength is $g\sim 10$ kHz. For isotopically pure $^{12}$C diamond we predict strong coupling of an NV spin to the unoccupied magnon mode, with cooperativity $\mathcal C=6$ for a wide range of NV spin locations within the diamond, well within the spatial precision of NV center implantation. Thus our proposal describes a practical pathway for single-spin-state-to-single-magnon-occupancy transduction and for entangling NV centers over micron length scales.",2003.04341v2 2022-12-08,Strong photon-magnon coupling using a lithographically defined organic ferrimagnet,"We demonstrate a hybrid quantum system composed of superconducting resonator photons and magnons hosted by the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_x$). Our work is motivated by the challenge of scalably integrating an arbitrarily-shaped, low-damping magnetic system with planar superconducting circuits, thus enabling a host of quantum magnonic circuit designs that were previously inaccessible. For example, by leveraging the inherent properties of magnons, one can enable nonreciprocal magnon-mediated quantum devices that use magnon propagation rather than electrical current. We take advantage of the properties of V[TCNE]$_x$, which has ultra-low intrinsic damping, can be grown at low processing temperatures on arbitrary substrates, and can be patterned via electron beam lithography. We demonstrate the scalable, lithographically integrated fabrication of hybrid quantum magnonic devices consisting of a thin-film superconducting resonator coupled to a low-damping, thin-film V[TCNE]$_x$ microstructure. Our devices operate in the strong coupling regime, with a cooperativity as high as 1181(44) at T$\sim$0.4 K, suitable for scalable quantum circuit integration. This work paves the way for the exploration of high-cooperativity hybrid magnonic quantum devices in which magnonic circuits can be designed and fabricated as easily as electrical wires.",2212.04423v1 2020-08-29,Exploring a quantum-information-relevant magnonic material: Ultralow damping at low temperature in the organic ferrimagnet V[TCNE]x,"Quantum information science and engineering requires novel low-loss magnetic materials for magnon-based quantum-coherent operations. The search for low-loss magnetic materials, traditionally driven by applications in microwave electronics near room-temperature, has gained additional constraints from the need to operate at cryogenic temperatures for many applications in quantum information science and technology. Whereas yttrium iron garnet (YIG) has been the material of choice for decades, the emergence of molecule-based materials with robust magnetism and ultra-low damping has opened new avenues for exploration. Specifically, thin-films of vanadium tetracyanoethylene (V[TCNE]x) can be patterned into the multiple, connected structures needed for hybrid quantum elements and have shown room-temperature Gilbert damping ({\alpha} = 4 \times 10^-5) that rivals the intrinsic (bulk) damping otherwise seen only in highly-polished YIG spheres (far more challenging to integrate into arrays). Here, we present a comprehensive and systematic study of the low-temperature magnetization dynamics for V[TCNE]x thin films, with implications for their application in quantum systems. These studies reveal a temperature-driven, strain-dependent magnetic anisotropy that compensates the thin-film shape anisotropy, and the recovery of a magnetic resonance linewidth at 5 K that is comparable to room-temperature values (roughly 2 G at 9.4 GHz). We can account for these variations of the V[TCNE]x linewidth within the context of scattering from very dilute paramagnetic impurities, and anticipate additional linewidth narrowing as the temperature is further reduced.",2008.13061v3 2023-08-07,$\textit{In situ}$ electric-field control of ferromagnetic resonance in the low-loss organic-based ferrimagnet V[TCNE]$_{x\sim 2}$,"We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]$_x$ films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in Gilbert damping for samples with $\alpha = 6.5 \times 10^{-5}$. We show this tuning effect is due to a strain-dependent magnetic anisotropy in the films and find the magnetoelastic coefficient $|\lambda_S| \sim (1 - 4.4)$ ppm, backed by theoretical predictions from DFT calculations and magnetoelastic theory. Noting the rapidly expanding application space for strain-tuned FMR, we define a new metric for magnetostrictive materials, $\textit{magnetostrictive agility}$, given by the ratio of the magnetoelastic coefficient to the FMR linewidth. This agility allows for a direct comparison between magnetostrictive materials in terms of their comparative efficacy for magnetoelectric applications requiring ultra-low loss magnetic resonance modulated by strain. With this metric, we show V[TCNE]$_x$ is competitive with other magnetostrictive materials including YIG and Terfenol-D. This combination of ultra-narrow linewidth and magnetostriction in a system that can be directly integrated into functional devices without requiring heterogeneous integration in a thin-film geometry promises unprecedented functionality for electric-field tuned microwave devices ranging from low-power, compact filters and circulators to emerging applications in quantum information science and technology.",2308.03353v1 2005-04-14,Ferromagnetism and Curie temperature of Vanadium-doped Nitrides,"Electronic structures, exchange interaction mechanism between magnetic ions and Curie temperature of Vanadium - doped Nitrides (AlN, GaN, and InN) are studied within KKR-LSDA-CPA. It is found that the ferromagnetic super-exchange interaction mechanism is dominant at low concentrations of Vanadium, but the anti-ferromagnetic super-exchange interaction appears and reduces the stabilization of ferromagnetism at sufficiently high concentrations (x > 0.10), especially for Vanadium-doped AlN and Vanadium- doped GaN. The estimation of the Curie temperature within the mean field approximation shows the Curie temperature of Vanadium-doped Nitrides exceeding the room temperature with a few constituents of Vanadium.",0504355v1 2015-11-24,Comparative computational study of lithium and sodium insertion in van der Waals and covalent tetracyanoethylene (TCNE) -based crystals as promising materials for organic lithium and sodium ion batteries,"We present a comparative ab initio study of Li and Na insertion in molecular (van der Waals) crystals of TCNE (tetracyanoethylene) as well as in covalent Li/Na-TCNE crystals. We confirm the structure of previously synthesized (covalent) Li-TCNE crystal as well as predict the existence of its Na-TCNE analogue. In the molecular/covalent TCNE crystals, insertion sites are identified with the binding energy of Li and Na up to 2.7/1.8 and 2.6/1.8 eV stronger than Li and Na cohesive energy, respectively, in dilute concentrations. Up to 5.5/2.5 and 3/2 Li and Na atoms per TCNE unit can be inserted in the molecular/covalent crystals, respectively, while preserving the structure, with maximum voltages, respectively, 3.5/2.2 and 3.3/2.7 V. Significantly, up to capacity of 418 mAh g-1 for both Li and Na in the molecular crystal and 198 mAh g-1 for Li and 177 mAh g-1 for Na in the covalent crystal, the insertion of Li and Na would not lead to reactions with common electrolytes. Tetracyanoethylene-based molecular and covalent crystals could therefore become efficient organic cathode and anode materials for Li and Na ion batteries.",1511.07649v2 2020-09-25,Current progress in vanadium oxide nanostructures and its composites as supercapacitor electrodes,"In recent years, vanadium oxides have gained immense attention in the field of energy storage devices due to their low-cost, layered structure and multi-valency despite their limited electrical conductivity and lower structural stability. In this brief review, we have tried to focus on electrochemical properties of the stoichiometric vanadium oxides along with VO_x composites. The morphology engineering, doping with heteroatom and formation of composites with carbon-based materials and/or conducting polymers in enhancing the supercapacitive performances of the vanadium oxides are discussed in details. Finally, the potentiality and challenges of vanadium oxides nanocomposites for supercapacitor applications are discussed.",2009.12034v1 2006-06-13,A Mechanism for Photoinduced Effects In Tetracyanoethylene-Based Organic Magnets,"The photoinduced magnetism in manganese-tetracyanoethylene (Mn-TCNE) molecule-based magnets is ascribed to charge-transfer excitations from manganese to TCNE. Charge-transfer energies are calculated using Density Functional Theory; photoinduced magnetization is described using a model Hamiltonian based on a double-exchange mechanism. Photoexciting electrons from the manganese core spin into the lowest unoccupied orbital of TCNE with photon energies around 3 eV increases the magnetization through a reduction of the canting angle of the manganese core spins for an average electron density on TCNE less than one. When photoexciting with a smaller energy, divalent TCNE molecules are formed. The delocalization of the excited electron causes a local spin flip of a manganese core spin.",0606343v1 2008-10-27,Strongly reshaped organic-metal interfaces: Tetracyanoethylene on Cu(100),"The interaction of the strong electron-acceptor tetracyanoethylene (TCNE) with the Cu(100) surface has been studied with scanning tunneling microscopy experiments and first-principles density functional theory calculations. We compare two different adsorption models with the experimental results and show that the molecular self-assembly is caused by a strong structural modification of the Cu(100) surface rather than the formation of a coordination network by diffusing Cu adatoms. Surface atoms become highly buckled and the chemisorption of TCNE is accompanied by a partial charge-transfer.",0810.4862v2 2015-02-12,Lithium and sodium storage on tetracyanoethylene (TCNE) and TCNE-(doped)-graphene complexes: a computational study,"Li and Na attachment to free tetracyanoethylene (TCNE) molecules and TCNE adsorbed on doped graphene is studied using density functional theory. While TCNE is adsorbed only weakly on ideal graphene, we identified a configuration in which TCNE is chemisorbed on Al-doped graphene via molecule C atom and a surface oxygen atom. Up to four (five) Li and Na atoms can be stored on both free (adsorbed) TCNE with binding energies stronger than cohesive energies of the Li and Na metals. When storing up to three atoms per molecule, it should be possible to avoid reduction of common battery electrolytes. TCNE immobilized on a conducting graphene-based substrate could therefore become an efficient anode material for organic Li and Na ion batteries. Importantly, there is no significant difference either in specific capacity (per unit mass of material excluding Li/Na) nor in voltage between Li and Na storage, which makes this kind of approach very promising for post-Li storage in general.",1502.03533v1 2016-06-21,Adsorption and STM imaging of tetracyanoethylene on Ag(001): An ab-initio study,"We investigate the adsorption of a single tetracyanoethylene (TCNE) molecule on the silver (001) surface. Adsorption structures, electronic properties, and scanning tunneling microscopy (STM) images are calculated within density-functional theory. Adsorption occurs most favorably in on-top configuration, with the C=C double bond directly above a silver atom and the four N atoms bound to four neighboring Ag atoms. The lowest unoccupied molecular orbital of TCNE becomes occupied due to electron transfer from the substrate. This state dominates the electronic spectrum and the STM image at moderately negative bias. We discuss and employ a spatial extrapolation technique for the calculation of STM and scanning tunneling spectroscopy (STS) images. Our calculated images are in good agreement with experimental data.",1606.06435v1 2023-07-27,A comprehensive guide for measuring total vanadium concentration and state of charge of vanadium electrolytes using UV-Visible spectroscopy,"This paper presents an exhaustive how-to guide on measuring the total vanadium concentration and state of charge of vanadium electrolytes using UV-Visible spectroscopy. The study is provided with an open-access database (https://github.com/AngeAM/SOC_Vanadium_Spectra_2023.git) that supports the methods and procedures and facilitates access to the calibration data. The study covers the three types of electrolyte solutions relevant to vanadium redox flow batteries, namely the anolyte $V^{II}/V^{III}$, the catholyte $V^{IV}V^V$, and the $V^{III}/V^{IV}$ commercial electrolyte, meant to be preconditioned to either $V^{III}$ or $V^{IV}$ before battery operation. Analytical expressions to calculate the concentration of different vanadium species in the electrolyte solutions are provided based on either empirical correlations or spectral deconvolution methods. The paper also examines the limitations of the measurement technique and provides insightful recommendations for future research. The open-access database provided by the authors is expected to serve as a valuable repository for scholars and scientists working in the field of vanadium redox flow batteries.",2307.15009v1 2008-12-16,Electrical properties of vanadium oxide subject to hydrogen plasma treatment,"The effect of doping with hydrogen on the electrical properties of vanadium oxide is studied. For vanadium oxide films, subject to cold hydrogen plasma treatment, the temperature dependence of resistance with a maximum at T ~ 100 K is observed. Also, the dependence of the a.c. resistance on frequency is studied. A strategy for fabrication new superconducting materials is discussed.",0812.2973v1 2009-04-08,Organometallic Vanadium-Borazine Systems: Efficient One- Dimensional Half-Metallic Spin Filters,"Using density functional theory, we have investigated the electronic and magnetic properties of finite-size as well as infinitely periodic organometallic vanadium-borazine systems for their possible applications in spintronics devices. From our calculations, we find the finite-size vanadium-borazine systems to be structurally more stable in comparison to their isoelectronic benzene counterparts. All the finite-size vanadium-borazine systems are found to be ferromagnetically stabilized, with the infinite one-dimensional wire exhibiting robust half-metallic behaviour. The finite-size clusters are also found to exhibit efficient spin filter properties when coupled to graphene electrodes.",0904.1342v1 2017-03-01,Infrared properties of micromachined vanadium oxide thin films,"This paper discusses questions of synthesizing and pressing vanadium oxides to create film-forming materials that can be used in producing optical coatings. Based on the film-forming materials thus created, technological processes have been developed for fabricating coatings from vanadium dioxide by two methods of producing thin films: vacuum evaporation and magnetron sputtering. Questions of using films made from vanadium oxide in optical instrumentation are considered.",1703.00127v1 2019-10-03,Vanadium trimers randomly aligned along the c-axis direction in layered LiVO2,"Herein, we discuss the identification of vanadium trimers in layered LiVO2 and its sulfide analog of LiVS2 with two-dimensional triangular lattices. Our comprehensive structural studies using synchrotron X-ray diffraction experiments clarified that vanadium trimers are randomly aligned along the c-axis direction in LiVO2, while the long-range ordering of vanadium trimers along the c-axis direction appears in LiVS2. Our results solve the longstanding issue of cluster patterns in LiVO2 and provide an experimental basis for identifying the mechanism of trimer formation.",1910.01337v1 2020-01-08,Electrical and optical properties of hydrated amorphous vanadium oxide,"Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte occurs. Metal-insulator transition in amorphous HxVO2 is found to be preserved up to high concentration (x ~ 1.5) of hydrogen. Memory switching with the N-type negative differential resistance, associated with the H+ ionic transfer, is observed in ""V/hydrated amorphous vanadium oxide/Au"" sandwich structures.",2001.02418v1 2022-09-03,Hall Sensor Based Measurements of the Magnetic Phase Diagram of Superconducting Vanadium,"Vanadium is an elemental type-II superconductor which has a pure superconducting phase, a vortex phase, and a non-superconducting phase. We designed and carried out a low-budget experiment in our undergraduate physics lab to measure the magnetic field a close distance from the surface of a pure Vanadium disk sample isothermally with a Hall sensor across a range of different temperatures and external magnetic fields. We then used these measurements to compute the superconducting phase diagram of Vanadium. After completing measurements at eight temperatures ranging from 2.6K to 5K and magnetic fields ranging from -0.2T to 0.2T, we were able to detect the Meissner phase (clearly), and a vortex phase (less clearly). Using the graphs of the hall bar magnetic field versus external magnetic field, we were able to derive a rough estimate for the upper critical field and the lower critical field of Vanadium at the eight temperatures wherein we conducted measurements. The results are in general accord with the phase diagram of Vanadium found in the literature, except that the critical temperature appears to be less than 5.43K and 5.13K (about 4.8K). Further, we observed critical fields lower than those found in the literature. We hypothesize this is due mostly to impurities in our Vanadium sample (purchased through Amazon.com), which would reduce the measured critical temperature below that of pure Vanadium, consistent with our results.",2209.01324v1 2024-01-17,Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS$_{2}$ Monolayers,"Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band structure and its dependence on vanadium concentration is still lacking. Therefore, here we perform power-dependent photoluminescence, resonant four-wave mixing, and differential reflectance spectroscopy to study the optical transitions close to the A exciton energy of vanadium-doped WS$_2$ monolayers with distinct concentrations. Instead of a single A exciton peak, vanadium-doped samples exhibit two photoluminescence peaks associated with transitions to occupied and unoccupied bands. Moreover, resonant Raman spectroscopy and resonant second-harmonic generation measurements revealed a blueshift in the B exciton but no energy change in the C exciton as vanadium is introduced in the monolayers. Density functional theory calculations showed that the band structure is sensitive to the Hubbard \(U\) correction for vanadium and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. Our work provides the first broadband optical characterization of these two-dimensional dilute magnetic semiconductors, shedding light on the novel electronic features of WS$_{2}$ monolayers which are tunable by the vanadium concentration.",2401.09402v1 2006-02-05,Magnetic properties of vanadium-oxide nanotubes probed by static magnetization and {51}V NMR,"Measurements of the static magnetic susceptibility and of the nuclear magnetic resonance of multiwalled vanadium-oxide nanotubes are reported. In this nanoscale magnet the structural low-dimensionality and mixed valency of vanadium ions yield a complex temperature dependence of the static magnetization and the nuclear relaxation rates. Analysis of the different contributions to the magnetism allows to identify individual interlayer magnetic sites as well as strongly antiferromagnetically coupled vanadium spins (S = 1/2) in the double layers of the nanotube's wall. In particular, the data give strong indications that in the structurally well-defined vanadium-spin chains in the walls, owing to an inhomogeneous charge distribution, antiferromagnetic dimers and trimers occur. Altogether, about 30% of the vanadium ions are coupled in dimers, exhibiting a spin gap of the order of 700 K, the other ~ 30% comprise individual spins and trimers, whereas the remaining \~ 40% are nonmagnetic.",0602114v2 2012-01-27,The effects of Vanadium on the strength of a bcc Fe Σ3(111)[1-10] grain boundary,"The effects of micro-alloying element, vanadium, on a bcc Fe \Sigma 3(111)[1-10] symmetric tilt grain boundary strength are studied using density functional theory calculations. The lowest energy configuration of the grain boundary structure are obtained from the first-principles calculations. The substitutional and interstitial point defect formation energies of vanadium in the grain boundary are compared. The substitutional defect is prefered to interstitial one. The segregation energies of vanadium onto the grain boundary and its fractured surfaces are computed. The cohesive energy calculation of the grain boundary with and without vanadium show that vanadium strengthen the bcc iron \Sigma 3(111)[1-10] grain boundary.",1201.5915v1 2016-07-10,Effect of isothermal holding temperature on the precipitation hardening in Vanadium-microalloyed steels with varying carbon and nitrogen levels,"Combined effect of Carbon and Nitrogen levels and isothermal holding temperature on the microstructure, precipitation and the tensile properties of Vanadium microalloyed steels with 0.05 weight percent Vanadium were studied. Two different Vanadium steels, one having higher Carbon and lower Nitrogen content, HCLN steel, and the other having lower Carbon and higher Nitrogen content, LCHN steel, were prepared and subjected to isothermal holding treatment over a temperature range of 500 to 750 degree Celsius, after hot-deformation. Maximum precipitation strengthening from fine Vanadium carbonitride precipitates has been found at intermediate isothermal holding temperatures i.e. 600 to 650 degree Celsius in both the steels. In spite of the significantly smaller fraction of pearlite and bainite, coarser average ferrite grain size and lower interaction of precipitation and dislocation in the ferrite matrix, the yield strength of LCHN steel was close to HCLN steel. This can be attributed to the higher precipitation strengthening ranging from 20 to 50 MPa resulted from the finer Vanadium precipitates in LCHN steel than that of HCLN steel.",1607.02721v1 2009-04-17,Novel magnetic properties of graphene: Presence of both ferromagnetic and antiferromagnetic features and other aspects,"Investigations of the magnetic properties of graphenes prepared by different methods reveal that dominant ferromagnetic interactions coexist along with antiferromagnetic interactions in all the samples. Thus, all the graphene samples exhibit room-temperature magnetic hysteresis. The magnetic properties depend on the number of layers and the sample area, small values of both favoring larger magnetization. Molecular charge-transfer affects the magnetic properties of graphene, interaction with a donor molecule such as tetrathiafulvalene having greater effect than an electron-withdrawing molecule such as tetracyanoethylene",0904.2739v1 2011-09-05,Charge-transfer excitations in molecular donor-acceptor complexes within the many-body Bethe-Salpeter approach,"We study within the perturbative many-body $GW$ and Bethe-Salpeter approach the low lying singlet charge-transfer excitations in molecular donor-acceptor complexes associating benzene, naphtalene and anthracene derivatives with the tetracyanoethylene acceptor. Our calculations demonstrate that such techniques can reproduce the experimental data with a mean average error of 0.1-0.15 eV for the present set of dimers, in excellent agreement with the best time-dependent density functional studies with optimized range-separated functionals. The present results pave the way to the study of photoinduced charge transfer processes in photovoltaic devices with a parameter-free \textit{ab initio} approach showing equivalent accuracy for finite and extended systems.",1109.0824v1 2014-11-28,Growth control of the oxidation state in vanadium oxide thin films,"Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metal- insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2(+3)O3, V(+4)O2, and V2(+5)O5. A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (< 10 mTorr) or higher P(O2) (> 25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.",1411.7922v1 2005-10-13,Theory of successive transitions in vanadium spinels and order of orbitals and spins,"We have theoretically studied successive transitions in vanadium spinel oxides with (t_2g)^2 electron configuration. These compounds show a structural transition at ~ 50K and an antiferromagnetic transition at ~ 40K. Since threefold t_2g orbitals of vanadium cations are occupied partially and vanadiums constitute a geometrically-frustrated pyrochlore lattice, the system provides a particular example to investigate the interplay among spin, orbital and lattice degrees of freedom on frustrated lattice. We examine the models with the Jahn-Teller coupling and/or the spin-orbital superexchange interaction, and conclude that keen competition between these two contributions explains the thermodynamics of vanadium spinels. Effects of quantum fluctuations as well as relativistic spin-orbit coupling are also discussed.",0510331v1 2008-03-19,Electrodynamics of the vanadium oxides VO2 and V2O3,"The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant changes occur in the optical conductivity of both VO2 and V2O3 across the metal-insulator transitions at least up to (and possibly beyond) 6 eV. We argue that such changes in optical conductivity and electronic spectral weight over a broad frequency range is evidence of the important role of electronic correlations to the metal-insulator transitions in both of these vanadium oxides. We observe a sharp optical transition with possible final state (exciton) effects in the insulating phase of VO2. This sharp optical transition occurs between narrow a1g bands that arise from the quasi-one-dimensional chains of vanadium dimers. Electronic correlations in the metallic phases of both VO2 and V2O3 lead to reduction of the kinetic energy of the charge carriers compared to band theory values, with paramagnetic metallic V2O3 showing evidence of stronger correlations compared to rutile metallic VO2.",0803.2739v1 2014-10-23,The interplay between the structural and magnetic properties of vanadium dioxide from first principles,"The effects of the spin and lattice degrees of freedom on the electronic structure of M1 vanadium dioxide are explored using a quasiparticle description. Contraction of the inter-vanadium spacing of the Peierls pairings stabilizes bonding electrons, reducing polarizability and thus widening the band gap. Increases of this inter-vanadium spacing of as little as 1 \% reduce this stabilization, resulting in a crossover to ferromagnetic behaviour accomplished by half of the valence electrons inhabiting the leading edge of the conduction band in localized atomic-like orbitals, as the antiferromagnetic order becomes unstable with respect to rearrangement according to Hund's first rule. The data indicates that the magnetic structure of M1 vanadium dioxide may be finely balanced; the antiferromagnetic order is a consequence of the overlapping nuclear potential of the Peierls pairs, and input which disrupts this will have a significant effect on magnetic properties.",1410.6522v1 2015-12-30,Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition,"The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, the sphere temperatures were varied in a range between 100 and 200 Celsius. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.",1512.09050v2 2016-02-25,Atomistic modeling of the anomalous helium behaviors in vanadium,"Ab initio calculations have been performed to clarify the primary behaviors of He atoms in vanadium and to generate the database for the development of the interatomic potential for V-He system within the framework of the""s-band""model.The calculated formation energies of the tetrahedral,octahedral and substitutional He defects,as well as those for He2,He3 and He2V clusters are reasonable when compared with relevant experimental results and ab initio calculations under the same conditions.The applicability of the present V-He potential for atomistic simulations to investigate the moving,clustering,and trapping of interstitial He atoms in vanadium are demonstrated.Similar to the results in iron and tungsten,the interstitial He atoms can migrate quickly in vanadium. However,He atoms aggregate into clusters with low binding energies,and the trapping of He atoms depend much on the pre-existing traps in vanadium.",1602.07826v1 2022-09-20,The actual pressure and temperature at the melt of elemental vanadium,"It is claimed that all of the pressure scales of the reported melting curves derived by diamond anvil cell experiments require a correction which takes into account the pressure thermal shift, where vanadium is an illustrative example. The linear behavior of the thermal pressure (Pth) vs. the temperature, as predicted by first principles theoretical assumptions is then experimentally confirmed. This allows extrapolation to determine of the actual pressure and thermal temperature at the melt. Accounting for the role of the pressure transmitting media in diamond anvil cell experiments, the analysis of elemental vanadium melting curve is presented. It is shown that the appropriate correction of shock waves melting data which takes into account the radiation absorbed by the LiF window, applies only to vanadium metal. The correct pressure scale of vanadium metal as derived by diamond anvil cell is presented.",2209.09836v1 2003-02-24,Crystal structure and charge order below the metal-insulator transition in the vanadium bronze $β$-SrV$_6$O$_{15}$,"Single crystal X-ray diffraction measurements were performed on one-dimensional mixed valence vanadium bronze $\beta$-SrV$_6$O$_{15}$ in which a metal-insulator transition exists at 170 K. Above 170 K the P2$_1$/a structure with zigzag order of Sr in the tunnels of vanadium is confirmed. In the structure below 170 K, the P2$_1$/a space group is retained with a b-axis threefold increase and a charge order appears. A Bond Valence Sum analysis shows that the charge order may consist in clusters of V$^{4+}$ regularly spaced along 1D direction.",0302476v1 2004-01-13,"Structural, orbital, and magnetic order in vanadium spinels","Vanadium spinels (ZnV_2O_4, MgV_2O_4, and CdV_2O_4) exhibit a sequence of structural and magnetic phase transitions, reflecting the interplay of lattice, orbital, and spin degrees of freedom. We offer a theoretical model taking into account the relativistic spin-orbit interaction, collective Jahn-Teller effect, and spin frustration. Below the structural transition, vanadium ions exhibit ferroorbital order and the magnet is best viewed as two sets of antiferromagnetic chains with a single-ion Ising anisotropy. Magnetic order, parametrized by two Ising variables, appears at a tetracritical point.",0401203v3 2005-05-02,Orbital order in vanadium spinels,"Motivated by recent theoretical and experimental controversy, we present a theoretical study to clarify the orbital symmetry of the ground state of vanadium spinel oxides AV$_2$O$_4$ (A=Zn, Mg, Cd). The study is based on an effective Hamiltonian with spin-orbital superexchange interaction and a local spin-orbit coupling term. We construct a classical phase-diagram and prove the complex orbital nature of the ground state. Remarkably, with our new analysis we predict correctly also the coherent tetragonal flattening of oxygen octahedra. Finally, through analytical considerations as well as numerical ab-initio simulations, we propose how to detect the predicted complex orbital ordering through vanadium K edge resonant x-ray scattering.",0505031v1 2007-04-29,Pinned Low Energy Electronic Excitation in Metal Exchanged Vanadium Oxide Nanoscrolls,"We measured the optical properties of mixed valent vanadium oxide nanoscrolls and their metal exchanged derivatives in order to investigate the charge dynamics in these compounds. In contrast to the prediction of a metallic state for the metal exchanged derivatives within a rigid band model, we find that the injected charges in Mn$^{2+}$ exchanged vanadium oxide nanoscrolls are pinned. A low-energy electronic excitation associated with the pinned carriers appears in the far infrared and persists at low temperature, suggesting that the nanoscrolls are weak metals in their bulk form, dominated by inhomogeneous charge disproportionation and Madelung energy effects.",0704.3861v1 2007-11-05,Magnetic excitations in vanadium spinels,"We study magnetic excitations in vanadium spinel oxides AV$_2$O$_4$ (A=Zn, Mg, Cd) using two models: first one is a superexchange model for vanadium S=1 spins, second one includes in addition spin-orbit coupling, and crystal anisotropy. We show that the experimentally observed magnetic ordering can be obtained in both models, however the orbital ordering is different with and without spin-orbit coupling and crystal anisotropy. We demonstrate that this difference strongly affects the spin-wave excitation spectrum above the magnetically ordered state, and argue that the neutron measurement of such dispersion is a way to distinguish between the two possible orbital orderings in AV$_2$O$_4$.",0711.0732v1 2009-07-08,Atomic scale characterization of deformation induced interfacial mixing in a Cu/V nanocomposite wire,"The microstructure of a Cu/V nanocomposite wire processed by cold drawing was investigated by high resolution transmission electron microscopy and atom probe tomography. The experimental data clearly reveal some deformation induced interfacial mixing where the vanadium filaments are nanoscaled. The mixed layer is a 2nm wide vanadium gradient in the fcc Cu phase. This mechanical mixing leads to the local fragmentation and dissolution of the filaments and to the formation of vanadium super saturated solid solutions in fcc Cu.",0907.1400v1 2014-11-26,Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass,"Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us and 4 % respectively. From the available spectroscopic data we propose the vanadium ions valence to be 3+ and be in tetrahedral coordination The results indicate potential for development of a laser or optical amplifier based on V:GLS.",1411.7156v1 2018-12-12,The root cause of hydrogen induced changes in optical transmission of vanadium,"The changes in the optical transmission of thin vanadium layers upon hydrogen absorption are found to be dominated by the volume changes of the layers and not directly linked to concentration. This effect is demonstrated by utilising the difference in the hydrogen induced expansion of V layers in Fe/V and Cr/V superlattices. Hydrogen resides solely in the vanadium layers in these superlattices, while occupying different sites, causing different lattice expansion. Quantitative agreement is obtained between the experimental results and first principle density functional calculations.",1812.04917v1 2020-08-24,Structural properties and Raman spectra of columbite-type NiNb$_{2-x}$V$_x$O$_6$ synthesized under high pressure,"The complete set of structural parameters of the new series of compounds NiNb$_{2-x}$V$_x$O$_6$ ($0\leq x \leq 2$) with the unusual columbite-type structure is presented here. In the samples containing vanadium, this crystalline structure was stabilized by synthesis in conditions of high pressure and high temperature. Here we report here the first Raman spectrum for the NiV$_2$O$_6$-\textsl{Pbcn} polymorph and extend the list of the previously observed modes for the NiNb$_2$O$_6$. The evolution of the vibrational Raman spectrum produced when the vanadium is substituted for niobium along the series is also presented and discussed. This evolution is interpreted by taking into account the changes in the local structural environment of the niobium/vanadium atoms and its influence over the nickel-oxygen bonds around them. The presence of vanadium atoms favors an increase of the symmetry in the arrangement of oxygen atoms around the nickel-ones; in counterpart, the vanadium is in an octahedral environment which is more distorted than that of the niobium. Because of these apparently subtle differences, the homogeneous distribution of vanadium in the solid solution NiNb$_{2-x}$V$_x$O$_6$ is not possible.",2008.10629v1 2021-05-21,Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation,"Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation method to oxidize RF-sputtered Vanadium films. Structural, surface-morphology and phase-transition properties of the oxidized films as a function of oxidation duration are presented. Phase-pure VO2 films are obtained by oxidizing ~130 nm Vanadium films in short oxidation duration of ~30 seconds. Compared to previous reports on VO2 synthesis using atmospheric oxidation of Vanadium films of similar thickness, we obtain a reduction in oxidation duration by more than one order. Synthesized VO2 thin film shows resistance switching of ~3 orders of magnitude. We demonstrate optical reflectance switching in long-wave infrared wavelengths in VO2 films synthesized using atmospheric oxidation of Vanadium. The extracted refractive index of VO2 in the insulating and in the metallic phase is in good agreement with VO2 synthesized using other methods. The considerable reduction in oxidation time of VO2 synthesis while retaining good resistance and optical switching properties will help in integration of VO2 in limited thermal budget processes, enabling further applications of this phase-transition material.",2105.10264v1 2005-12-12,Abundances of Vanadium and Bromine in 3 Cen A: Additional Odd-Z Anomalies,"We report abundance excesses of 1.2 and 2.6 dex, respectively, for vanadium and bromine in the hot, peculiar star 3 Cen A. Abundances for these two odd-Z elements have not been previously reported for this star. Taken with previous work, they strengthen the case of the origin of the abundance peculiarities by diffusion.",0512294v1 2004-03-10,"Comment on ""Molecular dynamics study of the threshold displacement energy in vanadium""","The simulation study on Frenkel pair creation in vanadium by L.A. Zepeda-Ruiz et al. (Phys. Rev. B 67, 134114, 2003) is criticized for its lack of reference to existing experimental work and for generally inadequate treatment of literature data. Hence, the validity of the ensuing discussion of various results (e.g. the value of the minimum TDE and the Frenkel pair stability in V) is questioned.",0403275v1 2009-07-11,Discovery of the Vanadium Isotopes,"Twenty-four vanadium isotopes have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.",0907.1994v1 2012-10-12,Effect of ion and electron irradiation on microstructure of vanadium,"The evolution of microstructures in pure vanadium under electron irradiation was investigated.",1210.3414v3 2014-02-09,Work function measurements of vanadium doped diamond-like carbon films by ultraviolet photoelectron spectroscopy,"Vanadium doped diamond-like carbon films prepared by unbalanced magnetron sputtering have been investigated by X-ray and ultraviolet photoelectron spectroscopy measurements for the purpose of revealing electronic structures including values of work function on the surfaces. In addition to these photoelectron measurements, X-ray diffraction measurements have been performed to characterize the crystal structures.",1402.1911v2 2014-11-27,The critical relaxation of the model of iron-vanadium magnetic superlattice,"The critical relaxation of iron-vanadium magnetic superlattice in case of the equality between interlayer and intralayer exchange interactions is investigated. The dynamic and static critical exponents of the model are calculated. A value of the critical temperature is evaluated.",1411.7505v1 2009-12-07,High temperature ferromagnetism of Li-doped vanadium oxide nanotubes,"The nature of a puzzling high temperature ferromagnetism of doped mixed-valent vanadium oxide nanotubes reported earlier by Krusin-Elbaum et al., Nature 431 (2004) 672, has been addressed by static magnetization, muon spin relaxation, nuclear magnetic and electron spin resonance spectroscopy techniques. A precise control of the charge doping was achieved by electrochemical Li intercalation. We find that it provides excess electrons, thereby increasing the number of interacting magnetic vanadium sites, and, at a certain doping level, yields a ferromagnetic-like response persisting up to room temperature. Thus we confirm the surprising previous results on the samples prepared by a completely different intercalation method. Moreover our spectroscopic data provide first ample evidence for the bulk nature of the effect. In particular, they enable a conclusion that the Li nucleates superparamagnetic nanosize spin clusters around the intercalation site which are responsible for the unusual high temperature ferromagnetism of vanadium oxide nanotubes.",0912.1237v1 2010-02-23,Growth model investigation of Vanadium-Benzene Polymer,"Electronic and magnetic properties of VnBzn+1 sandwich clusters are investigated using density functional theory. Growth model is applied to investigate the property change of Vanadium-Benzene sandwich clusters. Our results show that, for n<8, all V ions tend to put their spin in ferromagnetic state, and that the magnetic moments of VnBzn+1 increase linearly with n. Finite-size effects induce a nonmonotonous behavior of the VnBzn+1 magnetic properties. In the case of n=8, the electronic properties of VnBzn+1 has the same characteristics with the counterpart of Vanadium-Benzene infinite wire, hence, the critical length of VnBzn+1 is defined eight. Furthermore, our results demonstrate that Vanadium-Benzene infinite wire is a proper material for spin polarized transport and has a high stability in the presence of external electronic and magnetic fields.",1002.4323v1 2011-09-08,Current oscillations in Vanadium Dioxide: evidence for electrically triggered percolation avalanches,"In this work, we experimentally and theoretically explore voltage controlled oscillations occurring in micro-beams of vanadium dioxide. These oscillations are a result of the reversible insulator to metal phase transition in vanadium dioxide. Examining the structure of the observed oscillations in detail, we propose a modified percolative-avalanche model which allows for voltage-triggering. This model captures the periodicity and waveshape of the oscillations as well as several other key features. Importantly, our modeling shows that while temperature plays a critical role in the vanadium dioxide phase transition, electrically induced heating cannot act as the primary instigator of the oscillations in this configuration. This realization leads us to identify electric field as the most likely candidate for driving the phase transition.",1109.1834v1 2013-08-29,Grain boundary ferromagnetism in vanadium-doped In$_2$O$_3$ thin films,"Room temperature ferromagnetism was observed in In$_2$O$_3 thin films doped with 5 at.% vanadium, prepared by pulsed laser deposition at substrate temperatures ranging from 300 to 600 $\,^{\circ}{\rm C}$. X-ray absorption fine structure measurement indicated that vanadium was substitutionally dissolved in the In$_2$O$_3$ host lattice, thus excluding the existence of secondary phases of vanadium compounds. Magnetic measurements based on SQUID magnetometry and magnetic circular dichroism confirm that the magnetism is at grain boundaries and also in the grains. The overall magnetization originates from the competing effects between grains and grain boundaries.",1308.6492v1 2015-03-10,Vanadium sacrificial layers as a novel approach for the fabrication of freestanding Heusler Shape Memory Alloys,"In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificial vanadium layer is added between the substrate and the Heusler film. By means of selective wet-chemical etching the vanadium layer can be removed. Conditions for the crystallization of Vanadium layers and epitaxial growth of the Heusler films are indicated. Magnetic and structural properties of freestanding and as-prepared films are compared in detail. The main focus of this study is on the influence of substrate constraints on the Martensitic transistion.",1503.02987v1 2017-09-14,An Ab Initio Description of the Mott Metal-Insulator Transition of M$_{2}$ Vanadium Dioxide,"Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated. Similarly to the M$_{1}$ structure, the Peierls pairing of the M$_{2}$ structure results in bonding-antibonding splitting which stabilizes states in which the majority of the charge density resides on the Peierls chain. This is insufficient to drop all of the bonding states into the lower Hubbard band however. An antiferroelectric distortion on the neighboring vanadium chain is required to reduce the repulsion felt by the Peierls bonding states by increasing the distances between the vanadium and apical oxygen atoms, lowering the potential overlap thus reducing the charge density accumulation and thereby the electronic repulsion. The antibonding states are simultaneously pushed into the upper Hubbard band. The data indicate that sufficiently modified GW calculations are able to describe the interplay of the atomic and electronic structures occurring in Mott metal-insulator transitions.",1709.04602v1 2019-08-26,Vanadium spin qubits as telecom quantum emitters in silicon carbide,"Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O-band (1278-1388 nm), with brightness allowing cavity-free detection in a wafer-scale CMOS-compatible material. In vanadium ensembles, we characterize the complex d1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Finally, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid-state for quantum applications.",1908.09817v1 2021-07-28,Controllable p-type Doping of 2D WSe2 via Vanadium Substitution,"Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 {\deg}C and 400 {\deg}C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.",2107.13413v1 2022-06-13,Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions,"Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25s at 100mK, and of order 1s at 1.3K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems' hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.",2206.06240v1 2023-07-05,Low temperature spin Seebeck effect in non-magnetic vanadium dioxide,"The spin Seebeck effect (SSE) is sensitive to thermally driven magnetic excitations in magnetic insulators. Vanadium dioxide in its insulating low temperature phase is expected to lack magnetic degrees of freedom, as vanadium atoms are thought to form singlets upon dimerization of the vanadium chains. Instead, we find a paramagnetic SSE response in VO2 films that grows as the temperature decreases below 50 K. The field and temperature dependent SSE voltage is qualitatively consistent with a general model of paramagnetic SSE response and inconsistent with triplet spin transport. The microscopic nature of the magnetic excitations in VO2 requires further examination.",2307.02594v1 2023-11-09,Strain-Hardening Stages and Structure Evolution in Pure Niobium and Vanadium upon High Pressure Torsion,"High pressure torsion (HPT) is one of the ways to form nanostructured materials with high strength properties. However, HPT hardening mechanisms vary from material to material and are poorly understood for some BCC metals, particularly niobium and vanadium. This work aims to identify strain hardening stages for Nb and V metals during HPT. Two approaches have been used to identify the deformation stages during high pressure torsion. The approaches are based on the application of a ""piecewise"" model, taking into account the different deformation mechanisms that determine the type of the forming structure, and on the analysis of the hardness vs. true strain dependence according to the $H$$-$${e}^{0.5}$ law. We compared the identified stages with the results of the electron microscopic study of the structure. Both models describe well the structural changes observed microscopically in HPT-deformed niobium. However, we have shown that only the piecewise model gives an adequate description of the stages of structure development in vanadium. We have provided an explanation for the observed difference in the behavior of niobium and vanadium upon HPT.",2311.05549v2 2020-05-05,Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor,"Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application.",2005.01965v1 2000-12-18,"Structure determination, valence, and superexchange in the dimerized low temperature phase of alpha'-NaV2O5","We report results of a new analysis for the low-temperature structure of alpha'-NaV2O5 from synchrotron x-ray diffraction experiments. We confirm the existence of two inequivalent ladder structures in each vanadium layer. Based on our structural data we perform a bond-valence calculation for the vanadium sites in the low temperature state. Due to an asymmetric charge ordering we obtain only two different vanadium valences despite the three inequivalent sites. This explains the 51V-NMR observation of only two resonant peaks in the charge ordered phase. By use of a Slater-Koster method to obtain hopping matrix elements and cluster calculations we obtain effective vanadium-vanadium hoppings which compare well to LDA results. Using these in a cluster calculation we obtain a superexchange of 0.047 eV between electrons on neighbouring rungs of the same ladder for the undistorted phase. For the distorted phase we find a significant alternation in the shifts of the oxygen atoms along the legs of one of the two ladder types which leads to a significant exchange dimerisation \delta_J \approx 0.25.",0012327v3 2013-11-12,Influence of the C/O ratio on titanium and vanadium oxides in protoplanetary disks,"Context. The observation of carbon-rich disks have motivated several studies questioning the influence of the C/O ratio on their gas phase composition in order to establish the connection between the metallicity of hot-Jupiters and that of their parent stars. Aims. We to propose a method that allows the characterization of the adopted C/O ratio in protoplanetary disks independently from the determination of the host star composition. Titanium and vanadium chemistries are investigated because they are strong optical absorbers and also because their oxides are known to be sensitive to the C/O ratio in some exoplanet atmospheres. Methods. We use a commercial package based on the Gibbs energy minimization technique to compute the titanium and vanadium equilibrium chemistries in protoplanetary disks for C/O ratios ranging from 0.05 to 10. Our calculations are performed for pressures ranging from 1e-6 to 1e-2 bar, and for temperatures ranging from 50 to 2000 K. Results. We find that the vanadium nitride/vanadium oxide and titanium hydride/titanium oxide gas phase ratios strongly depend on the C/O ratio in the hot parts of disks (T > 1000 K). Our calculations suggest that, in these regions, these ratios can be used as tracers of the C/O value in protoplanetary disks.",1311.2916v1 2014-11-20,Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass,"In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/{\tau})\b{eta}], where {\tau} is the fluorescence lifetime and \b{eta} is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30 {\mu}s and 67 {\mu}s respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical doping concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/{\tau}1)+ b*exp-(t/{\tau}2), where {\tau}1and {\tau}2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5 {\mu}s and 30 {\mu}s respectively and for titanium they are 15 {\mu}s and 67 {\mu}s respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host gallium lanthanum oxy-sulphide (GLSO) is 43 {\mu}s and 97 {\mu}s respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled.",1411.7045v1 2016-11-04,Stability of rhombohedral phases in vanadium at high-pressure and high-temperature: first-principles investigations,"The pressure-induced transition of vanadium from BCC to rhombohedral structures is unique and intriguing among transition metals. In this work, the stability of these phases is revisited by using density functional theory. At finite temperatures, a novel transition of rhombohedral phases back to BCC phase induced by thermal electrons is discovered. This reentrant transition is found not driven by phonons, instead it is the electronic entropy that stabilizes the latter phase, which is totally out of expectation. Parallel to this transition, we find a peculiar and strong increase of the shear modulus C44 with increasing temperature. It is counter-intuitive in the sense that it suggests an unusual harding mechanism of vanadium by temperature. With these stability analyses, the high-pressure and finite-temperature phase diagram of vanadium is proposed. Furthermore, the dependence of the stability of RH phases on the Fermi energy and chemical environment is investigated. The results demonstrate that the position of the Fermi level has a significant impact on the phase stability, and follows the band-filling argument. Besides the Fermi surface nesting, we find that the localization/delocalization of the d orbitals also contributes to the instability of rhombohedral distortions in vanadium.",1611.01426v1 2018-07-25,$d-p$ model and spin-orbital order in the vanadium perovskites,"Using the multi-band $d-p$ model and unrestricted Hartree-Fock approximation we investigate the electronic structure and spin-orbital order in three-dimensional VO$_3$ lattice. The main aim of this investigation is testing if simple $d-p$ model, with partly filled $3d$ orbitals (at vanadium ions) and $2p$ orbitals (at oxygen ions), is capable of reproducing correctly nontrivial coexisting spin-orbital order observed in the vanadium perovskites. We point out that the multi-band $d-p$ model has to include partly filled $e_g$ orbitals at vanadium ions. The results suggest weak self-doping as an important correction beyond the ionic model and reproduce the possible ground states with broken spin-orbital symmetry on vanadium ions: either $C$-type alternating orbital order accompanied by $G$-type antiferromagnetic spin order, or $G$-type alternating orbital order accompanied by $C$-type antiferromagnetic spin order. Both states are experimentally observed and compete with each other in YVO$_3$ while only the latter was observed in LaVO$_3$. Orbital order is induced and stabilized by particular patterns of oxygen distortions arising from the Jahn-Teller effect. In contrast to time-consuming \textit{ab-initio} calculations, the computations using $d-p$ model are very quick and should be regarded as very useful in solid state physics, provided the parameters are selected carefully.",1807.09879v1 2022-08-29,Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films,"Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths in highly subwavelength partially oxidized Vanadium thin films. These partially oxidized films consist of a multilayer of Vanadium dioxide and Vanadium as shown using Raman spectroscopy and four-probe measurements. As Vanadium dioxide is a phase transition material that shows insulator to metal phase transition at 68 C, the observed infra-red resonances can be switched with temperature into a high-reflectance state. The wavelength of these resonances are passively tunable as a function of the oxidation duration. The obtained reflectance resonance at near-infrared wavelength red shifts from 1.78 um to 2.68 um with increasing oxidation duration while the long-wavelength infrared resonance blue shifts from 12.68 um to 9.96 um. To find the origin of the reflectance resonances, we model the reflectance spectra as a function of the oxidation duration using the transfer matrix method. The presented model captures the dual reflectance resonances reasonably well. These passive wavelength-tunable and switchable resonances with easy to fabricate lithography-free multilayer structure will be useful for multispectral applications such as camouflage, spectral selective microbolometer, and thermal management.",2208.13458v1 2005-10-06,A unified electrostatic and cavitation model for first-principles molecular dynamics in solution,"The electrostatic continuum solvent model developed by Fattebert and Gygi is combined with a first-principles formulation of the cavitation energy based on a natural quantum-mechanical definition for the surface of a solute. Despite its simplicity, the cavitation contribution calculated by this approach is found to be in remarkable agreement with that obtained by more complex algorithms relying on a large set of parameters. Our model allows for very efficient Car-Parrinello simulations of finite or extended systems in solution, and demonstrates a level of accuracy as good as that of established quantum-chemistry continuum solvent methods. We apply this approach to the study of tetracyanoethylene dimers in dichloromethane, providing valuable structural and dynamical insights on the dimerization phenomenon.",0510157v1 2008-08-23,Effects of interaction of electron donor and accepter molecules on the electronic structure of graphene,"Effects of interaction of graphene with electron donor and acceptor molecules have been investigated by employing Raman spectroscopy. The G band softens progressively with the increasing concentration of tetrathiafulvalene (TTF) which is an electron donor while the band stiffens with increasing concentration of tetracyanoethylene (TCNE) which is an electron-acceptor molecule. Both TTF and TCNE broaden the G-band. The 2D band position is also affected by interaction with TTF and TCNE. The intensity of the 2D-band decreases markedly with the concentration of either. The ratio of intensities of the 2D and G bands decreases with increase in TTF and TCNE concentrations. The electrical resistivity of graphene varies in opposite directions on interaction with TTF and TCNE. All these effects occur due to molecular charge-transfer, as evidenced by the observation of charge-transfer bands in the electronic absorption spectra.",0808.3165v1 2010-08-03,Electrical spin injection from an organic-based ferrimagnet in a hybrid organic/inorganic heterostructure,"We report the successful extraction of spin polarized current from the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x (x~2, TCNE: tetracyanoethylene; TC ~ 400 K, EG ~ 0.5 eV, s ~ 10-2 S/cm) and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). The spin current tracks the magnetization of V[TCNE]x~2, is weakly temperature dependent, and exhibits heavy hole / light hole asymmetry. This result has implications for room temperature spintronics and the use of inorganic materials to probe spin physics in organic and molecular systems.",1008.0675v2 2013-06-03,Adsorption site determination of a molecular monolayer via inelastic tunneling,"We have combined scanning tunneling microscopy with inelastic electron tunneling spectroscopy (IETS) and density functional theory (DFT) to study a tetracyanoethylene monolayer on Ag(100). Images show that the molecules arrange in locally ordered patterns with three non-equivalent, but undeterminable, adsorption sites. While scanning tunneling spectroscopy only shows subtle variations of the local electronic structure at the three different positions, we find that vibrational modes are very sensitive to the local atomic environment. IETS detects sizeable mode frequency shifts of the molecules located at the three topographically detected sites, which permits us to determine the molecular adsorption sites through identification with DFT calculations.",1306.0463v1 2014-12-07,Simple Cubic Carbon Phase C21-sc: A Promising Superhard Carbon Conductor,"Traditionally, all superhard carbon phases including diamond are electric insulators and all conductive carbon phases including graphite are mechanically soft. Based on first-principles calculation results, we report a superhard but conductive carbon phase C21-sc which can be obtained through increasing the sp3 bonds in the previously proposed soft and conductive phase C20-sc (Phys. Rev. B 74, 172101 2006). We also show that further increase of sp3 bonds in C21-sc results in a superhard and insulating phase C22-sc with sp3 bonds only. With C20-sc, C21-sc, C22-sc and graphite, the X-ray diffraction peaks from the unidentified carbon material synthesized by compressing the mixture of tetracyanoethylene and carbon black (Carbon, 41, 1309, 2003) can be understood. In view of its positive stability, superhard and conductive features, and the strong possibility of existence in previous experiments, C21-sc is a promising multi-functional material with potential applications in extreme conditions.",1412.2301v2 2015-10-04,Thermoelectric properties of graphene/boron nitride heterostructures,"Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands . In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene (TTF) increases the room-temperature thermopower to -284 {\mu}v/K and doping by the electron acceptor tetracyanoethylene (TCNE) increases S to 210 {\mu}v/K. After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.",1510.00948v1 2016-01-02,Gating of single molecule junction conductance by charge transfer complex formation,"The solid-state structures of organic charge transfer (CT) salts are critical in determining their mode of charge transport, and hence their unusual electrical properties, which range from semiconducting through metallic to superconducting. In contrast, using both theory and experiment, we show here that the conductance of metal | single molecule | metal junctions involving aromatic donor moieties (dialkylterthiophene, dialkylbenzene) increase by over an order of magnitude upon formation of charge transfer (CT) complexes with tetracyanoethylene (TCNE). This enhancement occurs because CT complex formation creates a new resonance in the transmission function, close to the metal contact Fermi energy, that is a signal of room-temperature quantum interference.",1601.00222v1 2017-09-15,Leaving the Valley: Charting the Energy Landscape of Metal/Organic Interfaces via Machine Learning,"The rich polymorphism exhibited by inorganic/organic interfaces is a major challenge for materials design. In this work we present a method to efficiently explore the potential energy surface and predict the formation energies of polymorphs and defects. This is achieved by training a machine learning model on a list of only 100 candidate structures that are evaluated via dispersion-corrected Density Functional Theory (DFT) calculations. We demonstrate the power of this approach for tetracyanoethylene on Ag(100) and explain the anisotropic ordering that is observed experimentally.",1709.05417v3 2018-09-24,Correlation of Kondo effect and molecular conformation of the acceptor molecule in the TTF-TCNE charge transfer complex,"A Kondo resonance has been observed on purely organic molecules in several combinations of charge transfer complexes on a metal surface. It has been regarded as a fingerprint of the transfer of one electron from the donor to the extended $\pi$ orbital of the acceptor's LUMO. Here, we investigate the stoichiometric checkerboard structure of tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE) on a Au(111) surface using scanning tunneling and atomic force microscopy at 4.8 K. We find a bistable state of the TCNE molecules with distinct structural and electronic properties. The two states represent different conformations of the TCNE within the structure. One of them exhibits a Kondo resonance, whereas the other one does not, despite of both TCNE types being singly charged.",1809.09229v1 2021-06-30,Towards targeted kinetic trapping of organic-inorganic interfaces: A computational case study,"Properties of inorganic-organic interfaces, such as their interface dipole, strongly depend on the structural arrangements of the organic molecules. A prime example is tetracyanoethylene (TCNE) on Cu(111), which shows two different phases with significantly different work functions. However, the thermodynamically pre-ferred phase is not always the one that is best suited for a given application. Rather, it may be desirable to selectively grow a kinetically trapped structure. In this work, we employ density functional theory and transi-tion state theory to discuss under which conditions such a kinetic trapping might be possible for the model system of TCNE on Cu. Specifically, we want to trap the molecules in the first layer in a flat-lying orientation. This requires temperatures that are sufficiently low to suppress the re-orientation of the molecules, which is thermodynamically more favorable for high dosages, but still high enough to enable ordered growth through diffusion of molecules. Based on the temperature-dependent diffusion and re-orientation rates, we propose a temperature range at which the re-orientation can be successfully suppressed.",2107.00477v2 2021-11-29,"Effect of salt concentration on the solubility, ion-dynamics, and transport properties of dissolved vanadium ions in lithium-ion battery electrolytes: Generalized solubility limit approach (Part II)","In this article, we study the transport properties of superconcentrated electrolytes using Molecular Dynamics simulations, which have been shown experimentally to retard elemental dissolution in vanadium containing cathode materials. Five compositions between one and seven molar lithium bis(trifluoromethanesulfonyl)imide in 1,3-Dioxolane and 1,2-Dimethoxyethane solvent mixture are studied using non-polarizable Optimized Potentials for Liquid Simulations - All Atom force field. The simulated physico-chemical properties such as ionic conductivity, self-diffusion coefficients, and density are observed to match well with the results obtained through experiments. Radial Distribution Function analysis reveals a strong co-ordination between salt anions and vanadium cations as the electrolyte transitions from a salt-in-solvent type to solvent-in-salt type electrolyte. A high anion content in the first solvation shell of vanadium cations is observed for solvent-in-salt type electrolytes, through ion-clustering calculations. Solvation free energy calculations using Free Energy Perturbation method indicate that the active material dissolution should be retarded by using superconcentrated electrolytes. Ion-dynamics of the clusters reveal that vanadium cation transport occurs against its concentration gradient due to strong coulombic interactions with the salt anions in superconcentrated electrolytes. The improvement in the cycleability of several vanadium containing cathode materials provides a robust proof for the theoretical framework described in this manuscript.",2111.14591v1 2024-01-05,Vanadium oxide clusters in substellar atmospheres: A quantum chemical study,"We aim to understand the formation of cloud condensation nuclei in oxygen-rich substellar atmospheres by calculating fundamental properties of the energetically most favorable vanadium oxide molecules and clusters. A hierarchical optimization approach is applied in order to find the most favorable structures for clusters of (VO)$_{N}$ and (VO$_2$)$_{N}$ for N=1-10, and (V$_2$O$_5$)$_{N}$ for N=1-4 and to calculate their thermodynamical potentials. The candidate geometries are initially optimized applying classical interatomic potentials and then refined at the B3LYP/cc-pVTZ level of theory to obtain accurate zero-point energies and thermochemical quantities. We present previously unreported vanadium oxide cluster structures as lowest-energy isomers. We report revised cluster energies and their thermochemical properties. Chemical equilibrium calculations are used to asses the impact of the updated and newly derived thermodynamic potentials on the gas-phase abundances of vanadium-bearing species. In chemical equilibrium, larger clusters from different stoichiometric families are found to be the most abundant vanadium-bearing species for temperatures below ~1000 K, while molecular VO is the most abundant between ~1000 K and ~2000 K. We determine the nucleation rates of each stoichiometric family for a given (T$_{gas}$, p$_{gas}$) profile of a brown dwarf using classical and non-classical nucleation theory. Small differences in the revised Gibbs free energies of the clusters have a large impact on the abundances of vanadium bearing species in chemical equilibrium at temperatures below ~1000 K, which subsequently has an impact on the nucleation rates of each stoichiometric family. We find that with the revised and more accurate cluster data non-classical nucleation rates are up to 15 orders of magnitude higher than classical nucleation rates.",2401.02784v1 2001-03-21,Spin-Peierls transition with strong structural fluctuations in the vanadium oxide VOSb$_{2}$O$_{4}$,"We report on the magnetic susceptibility and electron spin resonance measurements on polycrystalline samples of the vanadium oxide VOSb$_{2}$O$_{4}$, a quasi-one dimensional S=1/2 Heisenberg system. We show that the susceptibility vanishes at zero temperature, as in a gapped system, and we argue that this is due to a spin-Peierls transition with strong structural fluctuations.",0103441v1 2004-01-26,Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium,"We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular dynamics simulations. The <111>-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other <111> directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T<600 K, this behavior arises from temperature-dependent correlations. At T>600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.",0401525v1 2004-09-30,Dynamical singlets and correlation-assisted Peierls transition in VO2,"A theory of the metal-insulator transition in vanadium dioxide from the high-temperature rutile to the low- temperature monoclinic phase is proposed on the basis of cluster dynamical mean field theory, in conjunction with the density functional scheme. The interplay of strong electronic Coulomb interactions and structural distortions, in particular the dimerization of vanadium atoms in the low temperature phase, plays a crucial role. We find that VO2 is not a conventional Mott insulator, but that the formation of dynamical V-V singlet pairs due to strong Coulomb correlations is necessary to trigger the opening of a Peierls gap.",0410005v1 2005-05-08,Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides,"Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides, Pr_{1-x}Ca_xVO_3, Nd_{1-x}Sr_xVO_3 and Y_{1-x}Ca_xVO_3, with perovskite structure. The increase of the doping level x causes the melting of the G-type (and C-type) orbital order, prior to or concomitantly with the MIT, due partly to the doped-hole motion and partly to the ramdom potential arising from the quenched disorder. In particular, the G-type spin- and C-type orbital-ordered phase present in Y_{1-x}Ca_xVO_3 disappears immediately upon hole doping, around x=0.02. On the other hand, the critical doping level x for MIT is governed by the electron-correlation strength of the undoped parent compound.",0505190v1 2005-09-13,Electronic Structure and Exchange Interactions of Na$_{2}$V$_{3}$O$_{7}$,"We have performed first-principle calculations of the electronic structure and exchange couplings for the nanotube compound Na$_{2}$V$_{3}$O$_{7}$ using the LDA+U approach. Our results show that while the intra-ring exchange interactions are mainly antiferromagnetic, the inter-ring couplings are {\it ferromagnetic}. We argue that this is a consequence of the strong hybridization between filled and vacant 3d vanadium orbitals due to the low symmetry of Na$_{2}$V$_{3}$O$_{7}$, which results into strong - and often dominant - ferromagnetic contributions to the total exchange interaction between vanadium atoms. A comparison with results of previous works is included.",0509315v1 2005-11-30,Evidence for electronic phase separation between orbital orderings in SmVO3,"We report evidence for phase coexistence of orbital orderings of different symmetry in SmVO$_3$ by high resolution X-Ray powder diffraction. The phase coexistence is triggered by an antiferromagnetic ordering of the vanadium spins near 130K, below an initial orbital ordering near 200K. The phase coexistence is the result of the intermediate ionic size of samarium coupled to exchange striction at the vanadium spin ordering.",0511744v1 2006-10-09,V2O3(0001) on Au(111) and W(110): Metal to Insulator Transition Induced by Surface Termination,"Thin films of V2O3 have been grown on Au(111) and W(110). It is possible to prepare two different surface terminations: the first one is vanadium terminated whereas the second one exhibits additional oxygen atoms, forming vanadyl groups with the surface vanadium atoms. The electronic structure was studied for both terminations by photoelectron spectroscopy. While the first surface is metallic at room temperature like V2O3 bulk, the second surface with the vanadyl groups shows a gap at the Fermi level.",0610232v2 2006-11-28,Correlated metallic state of vanadium dioxide,"The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic correlations, not electron-phonon interactions, govern charge dynamics in the metallic state of VO$_2$. This study focuses on the frequency and temperature dependence of the conductivity in the regime of extremely short mean free path violating the Ioffe-Regel-Mott limit of metallic transport. The standard quasiparticle picture of charge conduction is found to be untenable in metallic VO$_2$.",0611724v1 2006-12-13,Lattice dynamics and thermodynamics of bcc vanadium at high pressures,"We investigate the lattice dynamics and thermodynamics of nonmagnetic bcc vanadium as a function of temperature and pressure, using the first principles linear response linear-muffin-tin-orbital method. The calculated phonon density of states (DOS) show strong temperature dependence, different from inelastic neutron scattering measurements where the phonon DOS show little change from room temperature up to 1273 K. We obtain the Helmholtz free energy including both electronic and phonon contributions and calculate various equation of state properties such as the bulk modulus and the thermal expansion coefficient. A detailed comparison has been made with available experimental measurements.",0612338v1 2007-02-08,Accurate estimations of circumstellar and interstellar lines of quadruply ionized vanadium using the coupled cluster approach,"Accurate {\it ab initio} calculations have been carried out to study the valence electron removal energies and oscillator strengths of astrophysically important electromagnetic transitions of quadruply ionized vanadium, $V^{4+}$. Many important electron correlations are considered to all-orders using the relativistic coupled-cluster theory. Calculated ionization potentials and fine structure splittings are compared with the experimental values, wherever available. To our knowledge, oscillator strengths of electric dipole transitions are predicted for the first time for most of the transitions. The transitions span in the range of ultraviolet, visible and near infrared regions and are important for astrophysical observations.",0702066v1 2009-12-08,Analytical evidence for quantum states in aqueous vanadium pentoxide with positron lifetime spectroscopy,"The possibility of registration of quantum states, such as the coalescence of droplets (tactoids) in the sol phase of aqueous vanadium pentoxide V$_2$O$_5$, with positron annihilation lifetime spectroscopy is discussed. The decrease of the long-living positronium (Ps) lifetime term in the result of the coalescence of V$_2$O$_5$ tactoids is predicted.",0912.1570v3 2010-04-27,Magnetic Ordering in Blocking Layer and Highly Anisotropic Electronic Structure of High-Tc Iron-based Superconductor Sr2VFeAsO3: LDA+U Studies,"We calculate electronic structures of a high-Tc iron-based superconductor Sr2VFeAsO3 by LDA+U method. We assume a checker-board antiferromagnetic order on blocking layers including vanadium and strong correlation in d-orbits of vanadium through the Hubbard U. While the standard LDA brings about metallic blocking layers and complicated Fermi surface as in the previous literatures, our calculation changes the blocking layer into insulating one and the Fermi surface becomes quite similar to those of other iron-based superconductors. Moreover, the appearance of the insulating blocking layers predicts high anisotropy on quasi-particle transports and new types of intrinsic Josephson effects.",1004.4741v1 2010-06-22,Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition,"Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.",1006.4376v1 2010-10-13,Hybrid InAs nanowire-vanadium proximity SQUID,"We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices with very large magnetic-field modulation of the critical current. All these properties make these devices attractive for on-chip quantum-circuit implementation.",1010.2545v1 2013-02-13,Theory of ferromagnetism in vanadium-oxide based perovskites,"The conditions under which ferromagnetism may occur in transition metal oxides with partially filled $t_{2g}$ shells such as vanadium-based perovskites are studied using a combination of density functional and single-site dynamical mean field methods. For reasonable values of the correlation strength, rotations of the VO$_6$ octahedra play an important role in enabling ferromagnetism, with ferromagnetism typically occurring for rotations larger than a nonzero critical value. Ferromagnetism is suppressed near the Mott insulating phase but the phase boundary is otherwise only weakly dependent on carrier concentration. Design rules are suggested for new oxide systems exhibiting ferromagnetism.",1302.3062v2 2013-03-16,Designing ferromagnetism in vanadium-oxide based superlattices,"Motivated by recent reports (Phys. Rev. B\textbf{80}, 241102) of room-temperature ferromagnetism in vanadium-oxide based superlattices, a single-site dynamical mean field study of the dependence of the paramagnetic-ferromagnetic phase boundary on superlattice geometry was performed. An examination of variants of the experimentally determined crystal structure indicate that ferromagnetism is found only in a small and probably inaccessible region of the phase diagram. Design criteria for increasing the range over which ferromagnetism might exist are proposed.",1303.4016v2 2013-09-27,Multiferroicity in V-doped PbTiO$_{3}$,"We report \emph{ab initio} predictions on the proper multiferroic (ferromagnetic, insulating and ferroelectric) character of PbTiO$_{3}$ doped with vanadium. V impurities coupled ferromagnetically carry a magnetization of 1 $\mu_{\rm B}$ each. The coupling is expected to be strong, since the paramagnetic solution is higher by 150 meV/vanadium, and no stable antiferromagnetic solution was found. The electronic gap in the doped system is about 0.2-0.3 eV in GGA, hence the system is properly multiferroic. V doping increases the spontaneous polarization in PbTiO$_{3}$, with an approximate percentual rate of 0.7 $\mu$C/cm$^{2}$.",1309.7205v1 2014-04-07,A hybrid vanadium fluoride with structurally isolated S = 1 kagome layers,"A new organically-templated vanadium (III) fluoride, (NH4)2(C2H8N)[V3F12], has been prepared using an ionothermal approach. This compound has a unique layered structure featuring distorted S = 1 kagome planes separated by the cationic species. The compound exhibits magnetic frustration, with a canted antiferromagnetic ground state. On further cooling within the ground state a pronounced change in magnetisation kinetics is observed.",1404.1755v1 2014-07-17,Effect of uniaxial strain on the site occupancy of hydrogen in vanadium from density-functional calculations,"We investigate the influence of uniaxial strain on site occupancy of hydrogen vanadium, using density functional theory. The site occupancy is found to be strongly influenced by the strain state of the lattice. The results provide the conceptual framework of the atomistic description of the observed hysteresis in the alpha to beta phase transition in bulk, as well as the preferred octahedral occupancy of hydrogen in strained V layers.",1407.4652v1 2016-01-23,"Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress","Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching effect is associated with the metal-insulator transition (MIT). In an electrical circuit containing such a switching device, relaxation oscillations are observed if the load line intersects the I-V curve at a unique point in NDR region. All these effects are potentially prospective for designing various devices of oxide electronics, particularly, elements of dynamical neural networks based on coupled oscillators.",1601.06246v1 2017-07-24,Magnetic properties of quasi one-dimensional vanadium-benzene nanowire affected by gas molecules: a first-principle study,"Magnetic properties of quasi one-dimensional vanadium-benzene nanowires (VBNW) are investigated theoretically with the absorption of gas molecules-NO and NO2. With the increase adsorption of NO on VBNW, the phase transition from half metal to ferromagnetic metal and last to paramagnetic semiconductor can be observed. With the increase of NO2 on VBNW, half metallic property can be enhanced at first and decreased later. Thus, the electronic and magnetic properties of VBNW can be sensitive and selective to NO and NO2, revealing the potential applications in spintronic sensors of these two kinds of molecules.",1707.07423v1 2017-10-16,Vanadium substitution: a simple and efficient way to improve UV sensing in ZnO,"UV sensing in pure ZnO is due to oxygen adsorption/desorption process from ZnO surface. Vanadium doping improves UV sensitivity of ZnO. Enhancement in UV sensitivity in doped ZnO is attributed to trapping and de-trapping of electrons at V4+ & V5+-related defect states. An extra electron in the V4+ state is excited under UV illumination while in absence of the same a trapping happens at the V5+ state. An insight to the mechanism is obtained by an analytic study of the response phenomenon.",1710.05998v1 2019-01-16,Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology,"We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics.",1901.05371v2 2020-01-08,Electrical conductivity of vanadium dioxide switching channel,"The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as R~exp(aT-b/T) in the high-temperature region (above 70 K). The experimental results are discussed from the viewpoint of the small polaron hopping conduction theory which takes into account the influence of thermal lattice vibrations onto the resonance integral.",2001.03053v1 2020-01-08,UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films,"We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy",2001.03054v1 2021-04-16,Ferromagnetism in 2D Vanadium Diselenide,"Two-dimensional (2D) Van der Waals ferromagnets carry the promise of ultimately miniature spintronics and information storage devices. Among the newly discovered 2D ferromagnets all inherit the magnetic ordering from their bulk ancestors. Here we report a new 2D ferromagnetic semiconductor at room temperature, 2H phase vanadium diselenide (VSe2) which show ferromagnetic at 2D form only. This unique 2D ferromagnetic semiconductor manifests an enhanced magnetic ordering owing to structural anisotropy at 2D limit.",2104.07937v1 2022-01-26,Terahertz Optical Properties and Birefringence in Single Crystal Vanadium doped [100] \b{eta}-Ga2O3,"We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows strong birefringence in the 0.2-2.4 THz range. Further, phase retardation by the V-doped \b{eta}-Ga2O3 has been measured over the whole THz range by Terahertz Time-Domain Polarimetry (THz-TDP). It is observed that the V-doped \b{eta}-Ga2O3 crystal behaves both as a quarter waveplate (QWP) at 0.38, 1.08, 1.71, 2.28 THz, and a half waveplate (HWP) at 0.74 and 1.94 THz, respectively.",2201.10740v1 2024-01-26,A Tunable Terahertz Metamaterial Perfect Absorber Based on Vanadium Dioxide,"In this paper, a tunable metamaterial perfect absorber based on vanadium dioxide (VO2) is designed in the terahertz frequency range. The proposed structure is simulated by the numerical method of three-dimensional Finite Difference Time Domain (FDTD). Simulation results show that the absorption spectrum of the device in the normal incidence of a plane wave light in the range of 1 THz to 12 THz, has three polarization-insensitive resonance peaks whose amplitude changes for the different conductivities of VO2 and shifts in a certain frequency range. This device also having a tolerance of 6 degrees of incidence angle can provide a relatively stable absorption spectrum.",2401.15218v1 2006-08-08,Multi-vanadium substituted polyoxometalates as efficient electrocatalysts for the oxidation of l-cysteine at low potential on glassy carbon electrodes,"The electrochemical behaviours of the sandwich-type complex [As2W18(VO)3O66]11- were studied in a pH 7 medium and compared with those of the three following Dawson-type vanadium-substituted complexes: [P2V2W16O62]8- (P2V2W16), [P2MoV2W15O62]8- (P2MoV2W15) and [P2V3W15O62]9- (P2V3W15). Electrochemistry shows that the sandwich-type POM contains 2 VIV centers and one VV center and must be formulated As2V2IVVW18, in agreement with titration, elemental analysis and magnetic measurements on this element.. All the POMs of this work proved efficient for the oxidation of L-cysteine. Comparison of the present results with those of mono-Vanadium substituted POMs indicates that accumulation of vanadium atoms in the POM framework is beneficial in the electrocatalytic process. In addition, the present work highlights the important influence of the POM structure in the electrocatalytic oxidation of L-cysteine. The remarkable outcome of this work is that the potential for the oxidation of L-cysteine in the presence of the selected POMs has been substantially driven in the negative direction compared to the case of glassy carbon alone, a feature which is associated with faster kinetics. The stability of the systems must also be pointed out.",0608085v1 2016-09-12,"Structure, hydrolysis and diffusion of aqueous vanadium ions from Car-Parrinello molecular dynamics","A molecular level understanding of the properties of electroactive vanadium species in aqueous solution is crucial for enhancing the performance of vanadium redox flow batteries (RFB). Here, we employ Car-Parrinello molecular dynamics (CPMD) simulations based on density functional theory to investigate the hydration structures, first hydrolysis reaction and diffusion of aqueous V$^{2+}$, V$^{3+}$, VO$^{2+}$, and VO$_2^+$ ions at 300 K. The results indicate that the first hydration shell of both V$^{2+}$ and V$^{3+}$ contains six water molecules, while VO$^{2+}$ is coordinated to five and VO$_2^+$ to three water ligands. The first acidity constants (p$K_\mathrm{a}$) estimated using metadynamics simulations are 2.47, 3.06 and 5.38 for aqueous V$^{3+}$, VO$_2^+$ and VO$^{2+}$, respectively, while V$^{2+}$ is predicted to be a fairly weak acid in aqueous solution with a p$K_\mathrm{a}$ value of 6.22. We also show that the presence of chloride ions in the first coordination sphere of the aqueous VO$_2^+$ ion has a significant impact on water hydrolysis leading to a much higher p$K_\mathrm{a}$ value of 4.8. This should result in a lower propensity of aqueous VO$_2^+$ for oxide precipitation reaction in agreement with experimental observations for chloride-based electrolyte solutions. The computed diffusion coefficients of vanadium species in water at room temperature are found to increase as V$^{3+}$ $<$ VO$_2^+$ $<$ VO$^{2+}$ $<$ V$^{2+}$ and thus correlate with the simulated hydrolysis constants, namely, the higher the p$K_\mathrm{a}$ value, the greater the diffusion coefficient.",1609.03463v1 2017-01-19,Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films,"Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in the metallic state of both materials. The low energy Drude response of V2O3 appears more susceptible than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, opening the way to similar studies in other complex materials.",1701.05531v1 2018-03-21,3D-printed conductive static mixers enable all-vanadium redox flow battery using slurry electrodes,"State-of-the-art all-vanadium redox flow batteries employ porous carbonaceous materials as electrodes. The battery cells possess non-scalable fixed electrodes inserted into a cell stack. In contrast, a conductive particle network dispersed in the electrolyte, known as slurry electrode, may be beneficial for a scalable redox flow battery. In this work, slurry electrodes are successfully introduced to an all-vanadium redox flow battery. Activated carbon and graphite powder particles are dispersed up to 20 wt% in the vanadium electrolyte and charge-discharge behavior is inspected via polarization studies. Graphite powder slurry is superior over activated carbon with a polarization behavior closer to the standard graphite felt electrodes. 3D-printed conductive static mixers introduced to the slurry channel improve the charge transfer via intensified slurry mixing and increased surface area. Consequently, a significant increase in the coulombic efficiency up to 95% and energy efficiency up to 65% is obtained. Our results show that slurry electrodes supported by conductive static mixers can be competitive to state-of-the-art electrodes yielding an additional degree of freedom in battery design. Research into carbon properties (particle size, internal surface area, pore size distribution) tailored to the electrolyte system and optimization of the mixer geometry may yield even better battery properties.",1804.05759v1 2019-03-06,Effective interaction for vanadium oxyhydrides Sr$_{n+1}$V$_n$O$_{2n+1}$H$_n$ ($n=1$ and $n\to\infty$): A constrained-RPA study,"Transition metal oxides have been one of the central objects in the studies of electron correlation effects because of their rich variety of physical properties mainly depending on the transition metal element. On the other hand, exploiting the anion degrees of freedom is less popular but can be another promising way to control properties of strongly correlated materials. In particular, oxyhydrides offer a unique playground of strongly correlated low-dimensional electronic structure, where the $s$ orbitals of hydrogen breaks a chemical bond between the cation $t_{2g}$ orbitals. In this study, we evaluate the effective interaction, i.e., the screened Coulomb interaction parameters in low-energy effective models, for vanadium oxyhydrides Sr$_{n+1}$V$_n$O$_{2n+1}$H$_n$ ($n=1,\infty$) using the constrained random-phase approximation (cRPA). We find that the effective interaction in the $t_{2g}$ model, where only the $t_{2g}$ orbitals are explicitly considered, is strongly screened by the $e_g$ bands compared with that for oxides, because the $e_g$ bands are much entangled with the $t_{2g}$ bands in the oxyhydrides. On the other hand, the effective interaction is rather strong in the $d$ model, where all the vanadium $d$ orbitals are explicitly considered, owing to a large energy separation between the V-$d$ bands and the anion bands (O-$p$ and H-$s$), because the O-$p$ states are stabilized by the existence of the hydrogen atoms. These findings suggest that non-trivial and unique correlation effects can take place in vanadium oxyhydrides.",1903.02222v2 2020-05-01,Tunable Ferromagnetism and Thermally Induced Spin Flip in Vanadium-doped Tungsten Diselenide Monolayers at Room Temperature,"The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step towards modern TMD-based spintronics, but also enables exploration of new and exciting dimensionality-driven magnetic phenomena. To this end, we show tunable ferromagnetism at room temperature and a thermally induced spin flip (TISF) in monolayers of V-doped WSe2. As vanadium concentrations increase within the WSe2 monolayers the saturation magnetization increases, and it is optimal at ~4at.% vanadium; the highest doping/alloying level ever achieved for V-doped WSe2 monolayers. The TISF occurs at ~175 K and becomes more pronounced upon increasing the temperature towards room temperature. We demonstrate that TISF can be manipulated by changing the vanadium concentration within the WSe2 monolayers. We attribute TISF to the magnetic field and temperature dependent flipping of the nearest W-site magnetic moments that are antiferromagnetically coupled to the V magnetic moments in the ground state. This is fully supported by a recent spin-polarized density functional theory calculation. Our findings pave the way for the development of novel spintronic and valleytronic nanodevices based on atomically thin magnetic semiconductors and stimulate further studies in this rapidly expanding research field of 2D magnetism.",2005.00493v1 2022-01-31,Evidence for mechanical softening-hardening dual anomaly in transition metals from shock compressed vanadium,"Solid usually becomes harder and tougher under compression, and turns softer at elevated temperature. Recently, compression-induced softening and heating-induced hardening (CISHIH) dual anomaly was predicted in group VB elements such as vanadium. Here, the evidence for this counterintuitive phenomenon is reported. By using accurate high-temperature high-pressure sound velocities measured at Hugoniot states generated by shock-waves, together with first-principles calculations, we observe not only the prominent compression-induced sound velocity reduction, but also strong heating-induced sound velocity enhancement, in shocked vanadium. The former corresponds to the softening in shear modulus by compression, whereas the latter reflects the reverse hardening by heat. These experiments also unveil another anomaly in Young's modulus that wasn't reported before. Based on the experimental and theoretical data, we infer that vanadium might transition from BCC into two different rhombohedral (RH1 and RH2) phases at about 79GPa and 116GPa along the Hugoniot, respectively, which implies a dramatic difference in static and dynamic loading, as well as the significance of deviatoric stress and rate-relevant effects in high-pressure phase transition dynamics.",2201.13085v1 2022-10-18,Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide,"Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with much stronger energy scales for spin-orbit and hyperfine coupling, but how this affects their spin coherence is little explored. Vanadium in silicon carbide is such a system, with technological interest for its optical emission at a telecom wavelength and compatibility with semiconductor industry. Here we show coherent spin dynamics of an ensemble of vanadium defects around a clock-transition, studied while isolated from, or coupled to neighbouring nuclear spins. We find spin dephasing times up to 7.2 $\mu$s, and via spin-echo studies coherence lifetimes that go well beyond tens of microseconds. We demonstrate operation points where strong coupling to neighbouring nuclear spins does not compromise the coherence of the central vanadium spin, which identifies how these can be applied as a coherent spin register. Our findings are relevant for understanding a wide class of defects with similar energy scales and crystal symmetries, that are currently explored in diamond, silicon carbide, and hexagonal boron nitride.",2210.09942v1 2023-06-29,"Novel 2D vanadium sulphides: synthesis, atomic structure engineering and charge density waves","Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of density-functional theory calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulphur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2x2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.",2306.16792v2 2023-09-21,Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide,"Vanadium dioxide (VO$_2$) is a strongly-correlated material that exhibits insulator-to-metal transition (IMT) near room temperature, which makes it a promising candidate for applications in nanophotonics or optoelectronics. However, creating VO$_2$ nanostructures with the desired functionality can be challenging due to microscopic inhomogeneities that can significantly impact the local optical and electronic properties. Thin lamellas, produced by focused ion beam milling from a homogeneous layer, provide a useful prototype for studying VO$_2$ at the truly microscopic level using a scanning transmission electron microscope (STEM). High-resolution imaging is used to identify structural inhomogeneities while electron energy-loss spectroscopy (EELS) supported by statistical analysis helps to detect V$_x$O$_y$ stoichiometries with a reduced oxidation number of vanadium at the areas of thickness below 70 nm. On the other hand, the thicker areas are dominated by vanadium dioxide, where the signatures of IMT are detected in both core-loss and low-loss EELS experiments with in-situ heating. The experimental results are interpreted with ab-initio and semi-classical calculations. This work shows that structural inhomogeneities such as pores and cracks present no harm to the desired optical properties of VO$_2$ samples.",2309.11980v2 2024-01-30,Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?,"Monolayers of molybdenum disulfide (MoS2) are the most studied two-dimensional (2D) transition-metal dichalcogenides (TMDs), due to its exceptional optical, electronic, and opto-electronic properties. Recent studies have shown the possibility of incorporating a small amount of magnetic transition metals (e.g., Fe, Co, Mn, V) into MoS2 to form a 2D dilute magnetic semiconductor (2D-DMS). However, the origin of the observed ferromagnetism has remained elusive, due to the presence of randomly generated sulfur vacancies during synthesis that can pair with magnetic dopants to form complex dopant-vacancy configurations altering the magnetic order induced by the dopants. By combining high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with first-principles density functional theory (DFT) calculations and magnetometry data, we demonstrate the critical effects of sulfur vacancies and their pairings with vanadium atoms on the magnetic ordering in V-doped MoS2 (V-MoS2) monolayers. Additionally, we fabricated a series of field effect transistors on these V-MoS2 monolayers and observed the emergence of p-type behavior as the vanadium concentration increased. Our study sheds light on the origin of ferromagnetism in V-MoS2 monolayers and provides a foundation for future research on defect engineering to tune the electronic and magnetic properties of atomically thin TMD-based DMSs.",2401.16806v1 2001-11-14,Interlayer exchange coupling and giant magnetoresistance in Fe/V (001) superlattices,"Magnetization and magnetoresistivity studies of Fe/V (001) superlattices are reported. The first giant magnetoresistance peak with respect to the vanadium and iron layer thicknesses is investigated. The interlayer antiferromagnetic coupling strength is found to show a peak at a vanadium layer thickness of 13 atomic monolayers ($\approx$ 20 \AA) with a full width at half maximum of about 2 monolayers. The antiferromagnetic coupling shows a maximum at an iron layer thickness of about 6 monolayers ($\approx$ 9 \AA) for series of superlattices with vanadium thicknesses around 13 monolayers. The magnitude of the giant magnetoresistance shows a similar variation as the antiferromagnetic coupling strength.",0111255v1 2003-05-05,Molecular dynamics study of melting of a bcc metal-vanadium II : thermodynamic melting,"We present molecular dynamics simulations of the thermodynamic melting transition of a bcc metal, vanadium using the Finnis-Sinclair potential. We studied the structural, transport and energetic properties of slabs made of 27 atomic layers with a free surface. We investigated premelting phenomena at the low-index surfaces of vanadium; V(111), V(001), and V(011), finding that as the temperature increases, the V(111) surface disorders first, then the V(100) surface, while the V(110) surface remains stable up to the melting temperature. Also, as the temperature increases, the disorder spreads from the surface layer into the bulk, establishing a thin quasiliquid film in the surface region. We conclude that the hierarchy of premelting phenomena is inversely proportional to the surface atomic density, being most pronounced for the V(111) surface which has the lowest surface density.",0305082v1 2004-03-29,The vanadium Magneli phases VnO(2n-1),"To compare the metal-insulator transitions (MITs) of VO2 and V2O3 we analyze the relations between the structural and electronic properties of the vanadium Magneli phases. These materials set up the homologous series VnO(2n-1) (3 <= n <= 9) and have crystal structures comprising typical dioxide-like and sesquioxide-like regions. As the MITs of the vanadium Magneli phases are accompanied by structural transformations, we are able to discuss the effects of characteristic changes in the local atomic environments. The systematic investigation of the transport properties is based on a new and unifying description of the crystal structures of the Magneli phases including VO2 and V2O3. Our results lead to a comprehensive understanding of the MITs in the Magneli class and shed new light on the role of particular electronic states for the MIT of V2O3.",0403689v1 2009-04-03,Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials,"Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure or compositional variations. An important potential advantage of nanoscale samples is that they exhibit the homogeneous properties, which can differ greatly from those of the bulk. We demonstrate this principle using vanadium dioxide, which has domain structure associated with its dramatic MIT at 68 degrees C. Our studies of single-domain vanadium dioxide nanobeams reveal new aspects of this famous MIT, including supercooling of the metallic phase by 50 degrees C; an activation energy in the insulating phase consistent with the optical gap; and a connection between the transition and the equilibrium carrier density in the insulating phase. Our devices also provide a nanomechanical method of determining the transition temperature, enable measurements on individual metal-insulator interphase walls, and allow general investigations of a phase transition in quasi-one-dimensional geometry.",0904.0596v1 2010-04-19,Evidence for strong Coulomb correlations in metallic phase of vanadium dioxide,"The influence of Coulomb correlation on magnetic and spectral properties in metallic rutile phase of vanadium dioxide is studied by state of the art LDA+DMFT method. Calculation results in strongly correlated metallic state with an effective mass renormalization $m^*/m\approx2$. Uniform magnetic susceptibility shows Curie-Weiss temperature dependence with effective magnetic moment, $p_{eff}^{theor} = 1.54 \mu_B$, in a good agreement with the experimental value $p_{eff}^{exp} = 1.53 \mu_B$ that is close to ideal value for V$^{4+}$ ion with the spin $S=1/2$, $p_{eff} = 1.73 \mu_B$. Calculated spectral function shows well developed Hubbard bands observabale in the recent experimental photoemission spectra. We conclude that VO2 in rutile phase is strongly correlated metal with local magnetic moments formed by vanadium $d$-electrons.",1004.3214v1 2010-07-20,Quantum criticality of vanadium chains with strong relativistic spin-orbit interaction,"We study quantum phase transitions induced by the on-site spin-orbit interaction lambda(L.S) in a toy model of vanadium chains. In the lambda->0 limit, the decoupled spin and orbital sectors are described by a Haldane and an Ising chain, respectively. The gapped ground state is composed of a ferro-orbital order and a spin liquid with finite correlation lengths. In the opposite limit, strong spin-orbital entanglement results in a simultaneous spin and orbital-moment ordering, which can be viewed as an orbital liquid. Using a combination of analytical arguments and density-matrix renormalization group calculation, we show that an intermediate phase, where the ferro-orbital state is accompanied by a spin Neel order, is bounded on both sides by Ising transition lines. Implications for vanadium compounds CaV2O4 and ZnV2O4 are also discussed.",1007.3472v3 2010-07-22,Strong reduction of V4+ amount in vanadium oxide/hexadecylamine nanotubes by doping with Co2+ and Ni2+ ions: EPR and magnetic studies,"In this work we present a complete characterization and magnetic study of vanadium oxide/hexadecylamine nanotubes (VOx/Hexa NT's) doped with Co2+ and Ni2+ ions. The morphology of the NT's has been characterized by Transmission Electron Microscopy (TEM) while the metallic elements have been quantified by Instrumental Neutron Activation Analysis (INAA) technique. The static and dynamic magnetic properties were studied collecting data of magnetization as a function of magnetic field and temperature and by Electron Paramagnetic Resonance (EPR). We observed that the incorporation of metallic ions (Co2+, S=3/2 and Ni2+, S=1) decrease notably the amount of V4+ ions in the system, from 14-16% (non-doped case) to 2-4%, with respect to the total vanadium atoms into the tubular nanostructure, improving considerably their potential technological applications as Li-ion batteries cathodes.",1007.3968v1 2011-04-15,The effect of hydrogen on the magnetic properties of FeV superlattice,"The electronic and magnetic structures of a hydrogenated and hydrogen free superlattice of 3 iron monolayers and 9 vanadium monolayers are studied using the first principle full-potential augmented-plane-wave method as implemented in WIEN2k package. The volume, the total energy and the magnetic moments of the system are studied versus the hydrogen positions at the octahedral sites within the superlattice and also versus the filling of the vanadium octahedral location by hydrogen atoms. It is found that the hydrogen locations at the interior of vanadium layer are energetically more favourable. The local Fe magnetic moment and the average magnetic moment per supercell are found to increase as the H position moves towards the Fe-V interface. On the other hand, the average magnetic moment per supercell is found to initially decrease up to filling by 3 H atoms and then increases afterwards. To our knowledge, this is the first reporting on the increase in the computed magnetic moment with hydrogenation. These trends of magnetic moments are attributed to the volume changes resulting from hydrogenation and not to electronic hydrogen-metal interaction.",1104.2965v1 2011-12-30,Refractive index of vanadium determined by resonant diffraction of soft x-rays,"The dispersive part of the refractive index of vanadium is determined by measuring the angular displacement of the first order diffraction peak of a V/Fe superlattice. The measurements were made using elliptically polarized synchrotron radiation which was scanned through the V L2,3 absorption edges for different incident scattering angles. The x-ray scattering technique provides access to direct determination of the dispersive part of the refractive index through an absorption resonance. The influence of absorption at the resonances is shown by comparing the absorption correction to the dispersion correction. The results demonstrate that 1-{\delta} is larger than unity at the L2,3 resonances of vanadium and the optical consequences are discussed.",1201.0109v1 2013-01-20,Theory of resonant inelastic X-ray scattering in vanadium oxides: how to detect $d$-$d$ excitations?,"Generic low-energy spectral features related to $d$-$d$ excitations in nearly cubic vanadium perovskites are predicted for the expected $L$-edge resonant inelastic X-ray scattering (RIXS) measurements. Model Hamiltonian describing local electronic properties, including crystal-field effects, of vanadium 3d orbitals in the basic $t_{2g}^2$ configuration is formulated with the help of complementary {\it ab initio} quantum-chemical cluster calculations. In the presence of 2p-core hole, the local Hamiltonian includes strong 2p-3d electron interactions. As a prerequisite for evaluating RIXS transition amplitudes beyond the fast collision approximation, a symmetry-group approach is applied to generate a basis set of many-electron wavefunctions of the intermediate core-hole states accessible in RIXS processes. Although a comprehensive description of the core-hole multiplets still remains a formidable task and requires using specially designed numerical codes, for particular resonant states the analysis is simplified and the calculation of RIXS amplitude can be carried out analytically to the end.",1301.4683v1 2013-07-17,Magnetic Field Induced Transition in Vanadium Spinels,"We study vanadium spinels $A$V$_2$O$_4$ ($A$ = Cd, Mg) in pulsed magnetic fields up to 65 T. A jump in magnetization at $\mu_0 H \approx$ 40 T is observed in the single-crystal MgV$_2$O$_4$, indicating a field induced quantum phase transition between two distinct magnetic orders. In the multiferroic CdV$_2$O$_4$, the field-induced transition is accompanied by a suppression of the electric polarization. By modeling the magnetic properties in the presence of strong spin-orbit coupling characteristic of vanadium spinels, we show that both features of the field-induced transition can be successfully explained by including the effects of the local trigonal crystal field.",1307.4775v2 2013-10-03,Computation of the correlated metal-insulator transition in vanadium dioxide from first principles,"Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to theory in order to be described properly. Here we report standard state-of-the-art first principles quantum Monte Carlo (QMC) calculations of the structural dependence of the properties of VO$_2$. Using this technique, we simulate the interactions between electrons explicitly, which allows for the metal-insulator transition to naturally emerge, importantly without ad-hoc adjustments. The QMC calculations show that the structural transition directly causes the metal-insulator transition and a change in the coupling of vanadium spins. This change in the spin coupling results in a prediction of a momentum-independent magnetic excitation in the insulating state. While two-body correlations are important to set the stage for this transition, they do not change significantly when VO$_2$ becomes an insulator. These results show that it is now possible to account for electron correlations in a quantitatively accurate way that is also specific to materials.",1310.1066v2 2013-12-30,Ultracompact Vanadium Dioxide Dual-Mode Plasmonic Waveguide Electroabsorption Modulator,"Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO$_2$-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the ""on"" state and high-loss VO$_2$ layer during the ""off"" state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10dB with an active size of only 200x50x220nm$^3$ (or ~{\lambda}$^3$/1700), requiring a drive-voltage of ~4.6V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology.",1312.7636v1 2014-01-16,Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams,"We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures ($T$) far below the critical temperature ($T_c$) of MIT, in several nanoscale vanadium oxide devices, show that both $T$ and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at $T << T_c$ electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as $T$ approaches $T_c$.",1401.4129v1 2014-07-04,A photoinduced metallic phase of monoclinic vanadium dioxide,"The complex interplay between several active degrees of freedom (charge, lattice, orbtial and spin order) is thought to determine the electronic properties of many oxides, but the respective role of the various contributions is often extremely difficult to determine. Vanadium dioxide (VO$_2$) is a particularly notorious example. Here we report on combined ultrafast electron diffraction (UED) and infrared transmissivity experiments in which we directly watch and separate the lattice and charge density reorganizations that are associated with the optically-induced semiconductor-metal transition (SMT) in VO$_2$. These studies have uncovered a previously unreported photoinduced transition to a metastable state with the periodic lattice distortion (PLD) characteristic of the insulator intact, but differing by a 1D rearrangement of charge density along the octahedrally coordinated vanadium dimer chains and a transition to metal-like mid IR optical properties. The results demonstrate that UED is capable of following details of both lattice and electronic structural dynamics on the ultrafast timescale.",1407.1304v1 2014-11-27,The critical dynamics of the models of iron-vanadium magnetic superlattice,"We report the results of a numerical investigation of static and dynamic critical behavior of the anisotropic easy-plane Heisenberg model which is used as a model for iron-vanadium magnetic superlattices. Models of iron-vanadium magnetic superlattice investigated with different values of intralayer and interlayer exchange interactions ratio. Numerical experiment technique, based on the dynamic finite-size scaling theory. Basic features of the time evolution of dynamic parameters for the researched systems are studied. The effect of interlayer exchange interaction value on a character of the critical dynamics is determined. It is confirmed the possibility of application of the Hamiltonian with strong easy-plane anisotropy for investigation both static and dynamic critical behavior of complex planar magnetic models.",1411.7509v1 2016-03-03,Measurement of collective excitations in VO$_2$ by resonant inelastic X-ray scattering,"Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic X-ray scattering is used to measure the excitation spectrum of charge, spin, and lattice degrees of freedom at the vanadium L-edge under different polarization and temperature conditions. These spectra reveal the evolution of energetics across the metal-insulator transition, including the low temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.",1603.01164v1 2017-03-07,Pressure-Temperature Phase Diagram of Vanadium Dioxide,"The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In this work, we map out the hydrostatic pressure - temperature phase diagram of vanadium dioxide nanobeams by independently varying pressure and temperature with a diamond anvil cell. In addition to the well-known insulating M1 (monoclinic) and metallic R (tetragonal) phases, the diagram identifies the existence at high pressures of the insulating M1' (monoclinic, more conductive than M1) phase, and two metallic phases of X (monoclinic) and O (orthorhombic, at high temperature only). Systematic optical and electrical measurements combined with density functional calculations allow us to delineate their phase boundaries as well as reveal some basic features of the transitions.",1703.02477v1 2017-12-19,Vanadium Transitions in the Spectrum of Arcturus,"We derive a new abundance for vanadium in the bright, mildly metal-poor red giant Arcturus. This star has an excellent high-resolution spectral atlas and well-understood atmospheric parameters, and it displays a rich set of neutral vanadium lines that are available for abundance extraction. We employ a newly recorded set of laboratory FTS spectra to investigate any potential discrepancies in previously reported V I log(gf) values near 900 nm. These new spectra support our earlier laboratory transition data and the calibration method utilized in that study. We then perform a synthetic spectrum analysis of weak V I features in Arcturus, deriving log {\epsilon}(V) = 3.54 $\pm$ 0.01 ({\sigma} = 0.04) from 55 lines. There are no significant abundance trends with wavelength, line strength, or lower excitation energy.",1712.06942v1 2018-09-18,Vertex corrections in self-consistent GW$Γ$ calculations: ground state properties of vanadium,"Self-consistent vertex corrected GW calculations have been performed to evaluate the equilibrium volume and corresponding bulk modulus of 3d transition metal vanadium. The study demonstrates the feasibility of this approach. The accuracy of the results obtained for vanadium is considerably better as compared to the accuracy of the results obtained with self consistent GW method without vertex corrections. It is shown that vertex corrections are important not only for the self energy, but also for the irreducible polarizability. The contribution to the value of the $\Psi$-functional from the vertex corrections is about 30 times smaller than the contribution from the GW part (correlation only!), suggesting the fast convergence of the expansion in terms of the screened interaction for this material. Consideration of the Ward-Takahashi Identity shows that the first order vertex correction eliminates considerable (about 80\%) part of the mismatch found in scGW calculations. The remaining small mismatch in the Ward-Takahashi Identity leaves, however, a possibility of the calculated low energy electronic structure being affected by higher order diagrams (not included in this study).",1809.06654v2 2019-08-14,Exploring the behavior of vanadium under high-pressure and high-temperature conditions,"We report a combined experimental and theoretical study of the melting curve and the structural behavior of vanadium under extreme pressure and temperature. We performed powder x-ray diffraction experiments up to 120 GPa and 4000 K, determining the phase boundary of the bcc-to-rhombohedral transition and melting temperatures at different pressures. Melting temperatures have also been established from the observation of temperature plateaus during laser heating, and the results from the density-functional theory calculations. Results obtained from our experiments and calculations are fully consistent and lead to an accurate determination of the melting curve of vanadium. These results are discussed in comparison with previous studies. The melting temperatures determined in this study are higher than those previously obtained using the speckle method, but also considerably lower than those obtained from shock-wave experiments and linear muffin-tin orbital calculations. Finally, a high-pressure high-temperature equation of state up to 120 GPa and 2800 K has also been determined.",1908.05166v1 2020-01-08,Influence of doping on the properties of vanadium oxide gel films,"Effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydration of vanadium pentoxide or its reduction (depending on the treatment conditions) to lower vanadium oxides. For some samples, which are subject to plasma treatment in the discharge active zone, a non-ordinary temperature dependence of resistance, with a maxi-mum at T ~ 100 K, is observed. For W-doped VO2 films, it is shown that substitution of V4+ with W6+ results in a decrease of the temperature of metal-insulator transition. Also, it has been shown that the doping of the initial films with ~3 at.% of W reduces the statistical scatter in the thresh-old parameters of the switching devices with S-shaped I-V characteristics on the basis of V2O5 gel films.",2001.02402v1 2020-01-08,Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method,"Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel at the VO2/Si interface, where a SiOx layer forms during the VO2 deposition process. This resistance is responsible for both threshold switching characteristics, and the memory effect, and the oxygen ion electromigration process is shown to underlie this effect. Potential applications of the observed phenomena, combining the effects of ReRAM and SMPT, in oxide electronics are discussed.",2001.03055v1 2020-01-08,Vanadium oxide thin films and fibers obtained by acetylacetonate sol-gel method,"Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol-gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO2 phase is chosen: 1) 25-550 C and 2) 550-600 C. The obtained films demonstrate the metal-insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied.",2001.11329v1 2020-09-02,Broadband operation of active terahertz quarter-wave plate achieved with vanadium-dioxide-based metasurface switchable by current injection,"We demonstrate the broadband operation of a switchable terahertz quarter-wave plate achieved with an active metasurface employing vanadium dioxide. For this purpose, we utilize anisotropically deformed checkerboard structures, which present broadband characteristics compatible with deep modulation. Moreover, the metasurface is integrated with a current injection circuit to achieve state switching; this injection circuit can also be employed to monitor the electric state of vanadium dioxide. We estimate the Stokes parameters derived from the experimental transmission spectra of the fabricated metasurface and confirm the helicity switching of circularly polarized waves near a designed frequency of 0.66THz. The relative bandwidth is evaluated as 0.52, which is 4.2 times broader than that in a previous study.",2009.00832v1 2020-12-03,Design of on-chip plasmonic modulator with vanadium-dioxide in hybrid orthogonal junctions on Silicon-on-Insulator,"We present a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on the silicon on insulator. The modulator has an ultra-compact footprint of 1.8{\mu}m x 1{\mu}m with a 100nm x 100nm modulating section based on the orthogonal geometry. We take advantage of large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89dB/{\mu}m. We also provide a fabrication strategy for the development of this device. The device geometry has potential applications in the development of next generation high frequency photonic modulators for optical communications which require a nanometer scale footprint, large modulation depth and small insertion losses.",2012.01695v1 2021-02-16,"Spin injection into vanadium dioxide films from a typical ferromagnetic metal, across the metal-insulator transition of the vanadium dioxide films","A vanadium dioxide VO2 film shows metal-insulator transition (MIT) induced by changing environmental temperature. We report the temperature dependence of electromotive force properties generated in VO2/Ni80Fe20 bilayer junctions under the ferromagnetic resonance (FMR) of the Ni80Fe20 layer. An electromotive force generated in a VO2/Ni80Fe20 bilayer junction under the FMR showed a small change across the MIT temperature of the VO2 film, while the VO2 film resistance drastically changed. This behavior was not only explained with the temperature dependence of the electromotive force property generated in the Ni80Fe20 film itself under the FMR, but also with the generated electromotive forces due to the inverse spin-Hall effect (ISHE) in the VO2 film under the FMR of the Ni80Fe20 film. That is, we successfully demonstrated the spin injection from a Ni80Fe20 film into a VO2 film across the MIT temperature of the VO2 film.",2102.07998v1 2021-06-07,Modeling refractory high-entropy alloys with efficient machine-learned interatomic potentials: defects and segregation,"We develop a fast and accurate machine-learned interatomic potential for the Mo-Nb-Ta-V-W quinary system and use it to study segregation and defects in the body-centred cubic refractory high-entropy alloy MoNbTaVW. In the bulk alloy, we observe clear ordering of mainly Mo-Ta and V-W binaries at low temperatures. In damaged crystals, our simulations reveal clear segregation of vanadium, the smallest atom in the alloy, to compressed interstitial-rich regions like radiation-induced dislocation loops. Vanadium also dominates the population of single self-interstitial atoms. In contrast, due to its larger size and low surface energy, niobium segregates to spacious regions like the inner surfaces of voids. When annealing samples with supersaturated concentrations of defects, we find that in complete contrast to W, interstitial atoms in MoNbTaVW cluster to create only small ($\sim 1$ nm) experimentally invisible dislocation loops enriched by vanadium. By comparison to W, we explain this by the reduced but three-dimensional migration of interstitials, the immobility of dislocation loops, and the increased mobility of vacancies in the high-entropy alloy, which together promote defect recombination over clustering.",2106.03369v2 2021-06-26,High Infrared Reflectance Modulation in VO2 Films Synthesized on Glass and ITO coated Glass substrates using Atmospheric Oxidation of Vanadium,"Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal oxidation of Vanadium to synthesize VO2 films on glass and ITO coated glass substrates. With the optimized short oxidation durations of 2 min and 4 min, the synthesized VO2 film shows high optical reflectance switching in long-wavelength infrared on glass substrates and mid-wavelength infrared on ITO coated glass substrates, respectively. Peak reflectance switching values of ~76% and ~79% are obtained on the respective substrates, which are among the highest reported values. Using the reflectance data, we extract VO2 complex refractive index in infrared wavelengths, in both the insulating and metallic phases. The extracted refractive index shows good agreement with VO2 synthesized using other methods. This demonstration of high optical reflectance switching in VO2 thin films, grown on low cost glass and ITO coated glass substrates, using a simple low thermal budget process will aid in enhancing VO2 applications in the optical domain.",2106.14006v1 2022-01-20,Effect of vanadium catalysts on hydrogen evolution from NaBH4,"NaBH4 is a very cheap and hydrogen rich material and a potential hydrogen store. However, high temperature of its thermal decomposition (above 530{\deg}C) renders it inapplicable in practical use. Here, we have studied the effect of addition of diverse V containing catalysts on thermal hydrogen desorption. It turns out that mechanochemical doping of NaBH4 with vanadium metal, its oxides or nanoparticles lowers the temperature of pyrolysis significantly. Notably, NaBH4 milled for 3 hrs with 25 wt.% of V2O5 or VO2 releases ca. 70 % of stored hydrogen in the temperature range from ca. 370{\deg}C to 450{\deg}C. On the other hand, precursors and solvents used to prepare rather uniform vanadium nanoparticles (ca. 4nm) suspended in THF or less uniform and larger ones (ca. 28nm) in ortho difluorobenzene, have adverse effect on purity of hydrogen evolved.",2201.08121v1 2022-03-02,Electro-optic modulator based on Vanadium dioxide epsilon-near-zero vertical nanowire triple-cavity in Silicon Waveguide,"We present an electro-optic modulator exploiting an array of Vanadium dioxide nanorods operating in the epsilon near regime as the active switching material integrated in a silicon waveguide. The modulator takes advantage of the insulator-to-metal transition of Vanadium dioxide to achieve a robust modulation depth of 19.7 dB/micron with a broad wavelength of operation. Using simulations, we demonstrate how the effective permittivity of the metamaterial can be tuned to a near-zero value by varying the nanorod geometry. The paper also proposes a novel hexagonal array design which achieves low insertion losses while retaining a strong modulation depth. The results provide insight into the design of ultra-compact modulators with high operation frequencies and low insertion losses.",2203.01431v1 2022-08-25,Spin Seebeck effect at low temperatures in the nominally paramagnetic insulating state of vanadium dioxide,"The low temperature monoclinic, insulating phase of vanadium dioxide is ordinarily considered nonmagnetic, with dimerized vanadium atoms forming spin singlets, though paramagnetic response is seen at low temperatures. We find a nonlocal spin Seebeck signal in VO2 films that appears below 30 K and which increases with decreasing temperature. The spin Seebeck response has a non-hysteretic dependence on in-plane external magnetic field. This paramagnetic spin Seebeck response is discussed in terms of prior findings on paramagnetic spin Seebeck effects and expected magnetic excitations of the monoclinic ground state.",2208.12284v1 2022-08-29,Vanadium oxide metal-insulator phase transition in different types of one-dimensional photonic microcavities,"The optical properties of vanadium dioxide ($VO_2$) can be tuned via metal-insulator transition. In this work different types of one-dimensional photonic structure-based microcavities that embed vanadium dioxide have been studied in the spectral range between 900 nm and 2000 nm. In particular, $VO_2$ has been sandwiched between: i) two photonic crystals made of $SiO_2$ and $ZrO_2$; ii) two aperiodic structures made of $SiO_2$ and $ZrO_2$ that follow the Thue-Morse sequence; iii) two disordered photonic structures, made of $SiO_2$ and $ZrO_2$ in which the disorder is introduced either by a random sequence of the two materials or by a random variation of the thicknesses of the layers; iv) two four material-based photonic crystals made of $SiO_2$, $Al_2O_3$, $Y_2O_3$, and $ZrO_2$. The ordered structures i and iv show, respectively, one and two intense transmission valleys with defect modes, while the aperiodic and disordered structures ii and iii show a manifold of transmission valleys due to their complex layered configurations. The metal-insulator transition of $VO_2$, controlled by temperature, results in a modulation of the optical properties of the microcavities.",2208.13452v1 2023-03-06,Thermal hysteresis in amplification and attenuation of surface-plasmon-polariton waves,"The propagation of surface-plasmon-polariton (SPP) waves at the planar interface of a metal and a dielectric material was investigated for a dielectric material with strongly temperature-dependent constitutive properties. The metal was silver and the dielectric material was vanadium multioxide impregnated with a combination of active dyes. Depending upon the volume fraction of vanadium multioxide, either attenuation or amplification of the SPP waves may be achieved; the degree of attenuation or amplification is strongly dependent on both the temperature and whether the temperature is increasing or decreasing. At intermediate volume fractions of vanadium multioxide, for a fixed temperature, a SPP wave may experience attenuation if the temperature is increasing but experience amplification if the temperature is decreasing.",2303.03087v1 2024-03-11,Active Control of Bound States in the Continuum in Toroidal Metasurfaces,"The remarkable properties of toroidal metasurfaces, featuring ultrahigh-Q bound states in the continuum (BIC) resonances and nonradiating anapole modes, have garnered significant attention. The active manipulation of toroidal resonance characteristics offers substantial potential for advancing tunable metasurfaces. Our study specifically explores the application of vanadium dioxide, a widely used phase change material in active photonics and room-temperature bolometric detectors, to control BIC resonances in toroidal metasurfaces. The phase change transition of vanadium dioxide occurs in a narrow temperature range providing a large variation in material resistivity. Through heating thin film patches of vanadium dioxide integrated into a metasurface comprising gold split-ring resonators on a sapphire substrate, we achieve remarkable control over the amplitude and frequency of toroidal dipole BIC resonances due to their high sensitivity to losses present in the system. Breaking the symmetry of meta-atoms reveals enhanced tunability. The predicted maximum change in the amplitude of toroidal dipole BIC resonances reaches 14 dB with a temperature variation of approximately 10oC. The proposed tunable metasurface holds promise for various applications, including active photonic systems and room temperature bolometers.",2403.06345v1 2024-03-17,Modified Steinberg-Guinan elasticity model to describe softening-hardening dual anomaly in vanadium,"Constitutive models are essential for describing the mechanical behavior of materials under high temperatures and pressures, among which the Steinberg-Guinan (SG) model is widely adopted. Recent work has discovered a peculiar dual anomaly of compression-induced softening and heating-induced hardening in the elasticity of compressed vanadium [Phys. Rev. B 104, 134102 (2021)], which is beyond the capability of the SG model to describe. In this work, a modified SG constitutive model is proposed to embody such an anomalous behavior. Elemental vanadium is considered as an example to demonstrate the effectiveness of this improved model in describing the dual anomalies of mechanical elasticity. This new variant of the SG model can also be applied to other materials that present an irregular variation in the mechanical elasticity, and is important to faithfully model and simulate the mechanical response of materials under extreme conditions.",2403.11179v1 2024-03-19,Superconducting transition temperatures of pure vanadium and vanadium-titanium alloys in the presence of dynamical electronic correlations,"Ordinary superconductors are widely assumed insensitive to small concentrations of random nonmagnetic impurities, whereas strong disorder suppresses superconductivity, ultimately leading to a superconductor-insulator transition. In between these limiting cases, a most fascinating regime may emerge where disorder enhances superconductivity. This effect is discussed here for the $\beta$-phase of vanadium-titanium alloys. Disorder is modeled using the coherent potential approximation while local electronic interactions are treated using dynamical mean-field theory. The McMillan formula is employed to estimate the superconducting transition temperature, showing a maximum at a Ti concentration of around $0.33$ for a local Coulomb interaction $U$ in the range of $2$ to $3$ eV. Our calculations quantitatively agree with the experimentally observed concentration dependent increase of $T_c$, and its maximal value of about $20\%$.",2403.13202v1 2009-01-28,Extension of the spin-1/2 frustrated square lattice model: the case of layered vanadium phosphates,"We study the influence of the spin lattice distortion on the properties of frustrated magnetic systems and consider the applicability of the spin-1/2 frustrated square lattice model to materials lacking tetragonal symmetry. We focus on the case of layered vanadium phosphates AA'VO(PO4)2 (AA' = Pb2, SrZn, BaZn, and BaCd). To provide a proper microscopic description of these compounds, we use extensive band structure calculations for real materials and model structures and supplement this analysis with simulations of thermodynamic properties, thus facilitating a direct comparison with the experimental data. Due to the reduced symmetry, the realistic spin model of layered vanadium phosphates AA'VO(PO4)2 includes four inequivalent exchange couplings: J1 and J1' between nearest-neighbors and J2 and J2' between next-nearest-neighbors. The estimates of individual exchange couplings suggest different regimes, from J1'/J1 and J2'/J2 close to 1 in BaCdVO(PO4)2, a nearly regular frustrated square lattice, to J1'/J1 ~ 0.7 and J2'/J2 ~ 0.4 in SrZnVO(PO4)2, a frustrated square lattice with sizable distortion. The underlying structural differences are analyzed, and the key factors causing the distortion of the spin lattice in layered vanadium compounds are discussed. We propose possible routes for finding new frustrated square lattice materials among complex vanadium oxides. Full diagonalization simulations of thermodynamic properties indicate the similarity of the extended model to the regular one with averaged couplings. In case of moderate frustration and moderate distortion, valid for all the AA'VO(PO4)2 compounds reported so far, the distorted spin lattice can be considered as a regular square lattice with the couplings (J1+J1')/2 between nearest-neighbors and (J2+J2')/2 between next-nearest-neighbors.",0901.4498v2 2018-08-25,Electron dynamics method using a locally projected group diabatic Fock matrix for molecules and aggregates,"We propose a method using reduced size of Hilbert space to describe an electron dynamics in molecule and aggregate based on our previous theoretical scheme [ T. Yonehara and T. Nakajima, J. Chem. Phys. \textbf{147}, 074110 (2017) ]. The real-time time-dependent density functional theory is combined with newly introduced projected group diabatic Fock matrix. First, this projection method is applied to a test donor--acceptor dimer, namely, a naphthalene--tetracyanoethylene with and without initial local excitations and light fields. Secondly, we calculate an absorption spectrum of five-unit-polythiophene monomer. The importance of feedback of instantaneous density to Fock matrix is also clarified. In all cases, half of the orbitals were safely reduced without loss of accuracy in descriptions of properties. The present scheme provides one possible way to investigate and analyze a complex excited electron dynamics in molecular aggregates within a moderate computational cost.",1808.08362v4 2021-07-01,How much does surface polymorphism influence the work function of organic/metal interfaces?,"Molecules adsorbing on metal surfaces form a variety of different surface polymorphs. How strongly this polymorphism affects interface properties is a priori unknown. In this work we investigate how strongly the surface polymorphism influences the interface work functions for various metal/organic interfaces. To evaluate the whole bandwidth of possible polymorphs, we perform full theoretical structure search, probing millions of polymorph candidates. All of these candidates might be observed in reality, either by kinetic trapping or by thermodynamic occupation. Employing first-principles calculations and machine learning we predict and analyze the work function changes for those millions of candidates for three physically distinct model systems: the weakly interacting naphthalene on Cu(111), the strongly interacting anthraquinone on Ag(111), and tetracyanoethylene, which undergoes a re-orientation from lying to standing polymorphs on the Cu(111) surface. These thorough investigations indicate that kinetic trapping of flat lying molecules can lead to work function differences of a few hundred meV. If the molecules also reorientate, this can increase to a change of several eV. We further show that the spread in work function decreases when working in thermodynamic equilibrium, but thermally occupied phases still lead to an intrinsic uncertainty at elevated temperatures.",2107.00560v3 2006-04-12,"Neutron diffraction study of YVO3, NdVO3, and TbVO3","The structural and magnetic properties of YVO3, NdVO3 and TbVO3 were investigated by single-crystal and powder neutron diffraction. YVO3 shows a structural phase transition at 200 K from an orthorhombic structure with the space group Pbnm to a monoclinic one with the space group P21/b. But supplementary high-resolution synchrotron diffraction experiments showed that the monoclinic distortion is extremely small. A group theoretical analysis shows that this magnetic state in the monoclinic phase is incompatible with the lattice structure, unless terms of higher than bilinear order in the spin operators are incorporated in the spin Hamiltonian. This observation is discussed in the light of recent theories invoking unusual many-body correlations between the vanadium t2g orbitals. A structural phase transition back to the orthorhombic space group Pbnm is observed upon cooling below 77 K. This transition is accompanied by a rearrangement of the magnetic structure into a mode compatible with the lattice structure. The crystal structures of NdVO3 and TbVO3 are closely similar to that of YVO3. However, only a single magnetic phase transition was found in the vanadium sublattice down to 9.5 K. Below 60 K the magnetic moments of the Nd- and Tb-ions are gradually polarized by the ordered vanadium moments. Below 11 K, we found a noncollinear order of the terbium moments.",0604305v1 2012-12-11,Insights into thermonuclear supernovae from the incomplete silicon burning process,"Type Ia supernova (SNIa) explosions synthesize a few tenths to several tenths of a solar mass, whose composition is the result of incomplete silicon burning that reaches peak temperatures of 4 GK to 5 GK. The elemental abundances are sensitive to the physical conditions in the explosion, making their measurement a promising clue to uncovering the properties of the progenitor star and of the explosion itself. Using a parameterized description of the thermodynamic history of matter undergoing incomplete silicon burning, we computed the final composition for a range of parameters wide enough to encompass current models of SNIa. Then, we searched for combinations of elemental abundances that trace the parameters values and are potentially measurable. For this purpose, we divide the present study into two epochs of SNIa, namely the optical epoch, from a few weeks to several months after the explosion, and the X-ray epoch, which refers to the time period in which the supernova remnant is young, starting one or two hundred years age and ending a thousand years after the event. During the optical epoch, the only SNIa property that can be extracted from the detection of incomplete silicon burning elements is the neutron excess of the progenitor white dwarf at thermal runaway, which can be determined through measuring the ratio of the abundance of manganese to that of titanium, chromium, or vanadium. Conversely, in the X-ray epoch, any abundance ratio built using a couple of elements from titanium, vanadium, chromium, or manganese may constrain the initial neutron excess. Furthermore, measuring the ratio of the abundances of vanadium to manganese in the X-ray might shed light on the timescale of the thermonuclear explosion.",1212.2410v1 2013-06-05,Measurements of ultracold neutron upscattering and absorption in polyethylene and vanadium,"The study of neutron cross sections for elements used as efficient ``absorbers'' of ultracold neutrons (UCN) is crucial for many precision experiments in nuclear and particle physics, cosmology and gravity. In this context, ``absorption'' includes both the capture and upscattering of neutrons to the energies above the UCN energy region. The available data, especially for hydrogen, do not agree between themselves or with the theory. In this report we describe measurements performed at the Los Alamos National Laboratory UCN facility of the UCN upscattering cross sections for vanadium and for hydrogen in CH$_2$ using simultaneous measurements of the radiative capture cross sections for these elements. We measured $\sigma_{up}=1972\pm130$ b for hydrogen in CH$_2$, which is below theoretical expectations, and $\sigma_{up} < 25\pm9$ b for vanadium, in agreement with the expectation for the neutron heating by thermal excitations in solids.",1306.1261v1 2016-02-15,Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide,"Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.",1602.04563v2 2016-10-19,Mathematical Modeling of Electrolyte Flow Dynamic Patterns and Volumetric Flow Penetrations in the Flow Channel over Porous Electrode Layered System in Vanadium Flow Battery with Serpentine Flow Field Design,"In this work, a two-dimensional mathematical model is developed to study the flow patterns and volumetric flow penetrations in the flow channel over the porous electrode layered system in vanadium flow battery with serpentine flow field design. The flow distributions at the interface between the flow channel and porous electrode are examined. It is found that the non-linear pressure distributions can distinguish the interface flow distributions under the ideal plug flow and ideal parabolic flow inlet boundary conditions. However, the volumetric flow penetration within the porous electrode beneath the flow channel through the integration of interface flow velocity reveals that this value is identical under both ideal plug flow and ideal parabolic flow inlet boundary conditions. The volumetric flow penetrations under the advection effects of flow channel and landing/rib are estimated. The maximum current density achieved in the flow battery can be predicted based on the 100% amount of electrolyte flow reactant consumption through the porous electrode beneath both flow channel and landing channel. The corresponding theoretical maximum current densities achieved in vanadium flow battery with one and three layers of SGL 10AA carbon paper electrode have reasonable agreement with experimental results under a proper permeability.",1610.06171v2 2017-06-02,Subcycle insulator-to-metal transition in vanadium dioxide by terahertz-field-driven tunneling,"In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of optical energy. Here we demonstrate that an atomically-strong terahertz electric field initiates a metastable ultrafast IMT in vanadium dioxide without a concomitant lattice transformation. The free-space terahertz field acts as off-resonant excitation with photon energy below the lattice phonons and the interband transitions. Differently from optical and infrared excitation, terahertz interaction leads to a full IMT by interband Zener tunneling with a negligible entropy deposition. In previous experiments the temporal dynamics of IMT in VO2 could be only indirectly inferred. We disentangle the electronic and lattice contributions to the IMT on a sub-picosecond timescale. Near the critical temperature the IMT becomes dissipative and the terahertz field concludes the lattice-assisted metallic nucleation initiated by heating. The method of strong-field induced phase transition presented here is applicable to a wide class of strongly correlated systems and will enable the discovery of novel metastable phases.",1706.00616v2 2019-02-12,The role of defects in the metal-insulator transition in VO$_{2}$ and V$_2$O$_3$,"The vanadates VO$_2$ and V$_2$O$_3$ are prototypical examples of strongly correlated materials that exhibit a metal-insulator transition. While the phase transitions in these materials have been studied extensively, there is a limited understanding of how the properties of these materials are affected by the presence of defects and doping. In this study we investigate the impact of native point defects in the form of Frenkel defects on the structural, magnetic and electronic properties of VO$_2$ and V$_2$O$_3$, using first-principles calculations. In VO$_2$ the vanadium Frenkel pairs lead to a non-trivial insulating state. The unpaired vanadium interstitial bonds to a single dimer, which leads to a trimer that has one singlet state and one localized single-electron $S=1/2$ state. The unpaired broken dimer created by the vanadium vacancy also has a localized $S=1/2$ state. Thus, the insulating state is created by the singlet dimers, the trimer and the two localized $S=1/2$ states. Oxygen Frenkel pairs, on the other hand, lead to a metallic state in VO$_2$, but are expected to be present in much lower concentrations. In contrast, the Frenkel defects in V$_2$O$_3$ do not directly suppress the insulating character of the material. However, the disorder created by defects in V$_2$O$_3$ alters the local magnetic moments and in turn reduces the energy cost of a transition between the insulating and conducting phases of the material. We also find self-trapped small polarons in V$_2$O$_3$, which has implications for transport properties in the insulating phase.",1902.04526v1 2019-12-26,Strong local moment antiferromagnetic spin fluctuations in V-doped LiFeAs,"We use neutron scattering to study vanadium (hole)-doped LiFe$_{1-x}$V$_x$As. In the undoped state, LiFeAs exhibits superconductivity at $T_c=18$ K and transverse incommensurate spin excitations similar to electron overdoped iron pnictides. Upon vanadium-doping to form LiFe$_{0.955}$V$_{0.045}$, the transverse incommensurate spin excitations in LiFeAs transform into longitudinally elongated in a similar fashion as that of potassium (hole) doped Ba$_{0.7}$K$_{0.3}$Fe$_2$As$_2$, but with dramatically enhanced magnetic scattering and elimination of superconductivity. This is different from the suppression of the overall magnetic excitations in hole doped BaFe$_2$As$_2$ and the enhancement of superconductivity near optimal hole doping. These results are consistent with density function theory plus dynamic mean field theory calculations, suggesting that vanadium-doping in LiFeAs may induce an enlarged effective magnetic moment $S_{eff}$ with a spin crossover ground state arising from the inter-orbital scattering of itinerant electrons.",1912.11860v1 2020-01-14,"Interplay among Work Function, electronic structure and stoichiometry in nanostructured vanadium oxides films","The work function is the parameter of greatest interest in many technological applications involving charge exchange mechanisms at the interface. The possibility to produce samples with a controlled work function is then particularly interesting, albeit challenging. We synthetized nanostructured vanadium oxides films by a room temperature Supersonic Cluster Beam Deposition method, obtaining samples with tunable stoichiometry and work function (3.7-7 eV). We present an investigation of the electronic structure of several vanadium oxides films as a function of the oxygen content via in-situ Auger, valence-band photoemission spectroscopy and work function measurements. The experiments probed the partial 3d density of states, highlighting the presence of strong V3d-O2p and V3d-V4s hybridization which influence 3d occupation. We show how controlling the stoichiometry of the sample implies a control over work function, and that the access to nanoscale quantum confinement can be exploited to increase the work function of the sample relative to the bulk analogue. In general, the knowledge of the interplay among work function, electronic structure, and stoichiometry is strategic to match nanostructured oxides to their target applications.",2001.04695v1 2020-10-21,Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst,"Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution.",2010.10908v1 2021-04-15,Fermi surface mapping and the nature of charge density wave order in the kagome superconductor CsV$_3$Sb$_5$,"The recently discovered family of AV$_3$Sb$_5$ (A: K, Rb Cs) kagome metals possess a unique combination of nontrivial band topology, superconducting ground states, and signatures of electron correlations manifest via competing charge density wave order. Little is understood regarding the nature of the charge density wave (CDW) instability inherent to these compounds and the potential correlation with the accompanying onset of a large anomalous Hall response. To understand the impact of the CDW order on the electronic structure in these systems, we present quantum oscillation measurements on single crystals of CsV$_3$Sb$_5$. Our data provides direct evidence that the CDW invokes a substantial reconstruction of the Fermi surface pockets associated with the vanadium orbitals and the kagome lattice framework. In conjunction with density functional theory modeling, we are able to identify split oscillation frequencies originating from reconstructed pockets built from vanadium orbitals and Dirac-like bands. Complementary diffraction measurements are further able to demonstrate that the CDW instability has a correlated phasing between neighboring V$_3$Sb$_5$ planes. These results provide critical insights into the underlying CDW instability in AV$_3$Sb$_5$ kagome metals and support minimal models of CDW order arising from within the vanadium-based kagome lattice.",2104.07230v3 2021-07-03,Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation,"Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidized in open air. For an optimum oxidation duration, VO2 films are obtained with good phase transition properties. We recently reported a modified APTO process using a step temperature profile for oxidation (Thin Solid Films 706, 138003 (2020)). We demonstrated an ultra-low thermal budget synthesis of VO2 thin films with good electrical and optical phase transition properties. For a 130 nm room-temperature RF sputtered V thin film, an optimum oxidation duration of ~ 30 s was obtained. In this work, we study how the starting V film thickness and deposition temperature affects the optimum oxidation duration. V thin films of varying thickness (15-212 nm) and 120 nm thick V films with varying deposition temperature (~27-450 C) are prepared using RF magnetron sputtering. These films are oxidized for different oxidation durations and characterized using Raman and four-probe measurements to find the optimum oxidation duration for each deposition condition. We find that the optimum oxidation duration increases with the increase in V film thickness and V deposition temperature. We model the effect of V film thickness and deposition temperature on the optimal oxidation time using a parabolic law which can be used to obtain the optimal oxidation times for intermediate V thicknesses/deposition temperatures.",2107.01413v1 2021-11-28,Investigations on the improved cycling stability of Kazakhstanite phase Fe-V-O layered oxide by using superconcentrated electrolytes: Generalized solubility limit approach (Part I),"In this article, we address the issue of vanadium dissolution pertinent in the layered Fe5V15O39(OH)9.9H2O using the solubility limit approach. This layered oxide is prepared via a low-cost solution phase synthesis route and crystallizes in the Kazakhstanite phase (Space Group: C2/m), confirmed using selected area electron diffraction and x-ray diffraction.The layered oxide exhibits the 2 electron redox reaction of vanadium (V5+ to V3+) along with the 1 electron redox reaction of iron within the voltage window of 1.5-3.8V. This results in a high specific capacity of ~350mAhg-1 which can be extracted from this material. However, the transition from V4+ to V3+ is identified to initiate a dissolution process at ~2.5V, resulting in a loss of active material and poor cycling stability. The vanadium dissolution is found to be arrested by switching to a superconcentrated electrolyte, wherein the amount of 'free' solvent is low. An electrolyte, consisting of seven molar lithium bis(trifluoromethanesulfonyl)imide in 1,3-Dioxolane: 1,2-Dimethoxyethane = 1:1 (v:v), is found to be suitable in providing the best cycling stability amongst the other compositions tested. The electrochemical characteristics of the passivation layers formed over lithium foil are mathematically modeled to indicate the preference of superconcentrated electrolytes over relatively dilute ones.",2111.14198v1 2022-03-18,Transient dynamics of the phase transition in VO2 revealed by mega electron-volt ultrafast electron diffraction,"Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state without structural transition, were also proposed. These unique characteristics let VO2 have great potential in thermal switchable devices and photonic applications. Although great efforts have been made, the atomic pathway during the photoinduced phase transition is still not clear. Here, we synthesized freestanding quasi-single-crystal VO2 films and examined their photoinduced structural phase transition with mega-electron-volt ultrafast electron diffraction. Leveraging the high signal-to-noise ratio and high temporal resolution, we observe that the disappearance of vanadium dimers and zigzag chains does not coincide with the transformation of crystal symmetry. After photoexcitation, the initial structure is strongly modified within 200 femtoseconds, resulting in a transient monoclinic structure without vanadium dimers and zigzag chains. Then, it continues to evolve to the final tetragonal structure in approximately 5 picoseconds. In addition, only one laser fluence threshold instead of two thresholds suggested in polycrystalline samples was observed in our quasi-single-crystal samples. Our findings provide new essential information for a comprehensive understanding of the photoinduced ultrafast phase transition in VO2.",2203.09776v2 2023-01-16,Polaronic and Mott insulating phase of layered magnetic vanadium trihalide VCl3,"Two-dimensional (2D) van der Waals (vdW) magnetic $3d$-transition metal trihalides are a new class of functional materials showing exotic physical properties useful for spintronic and memory storage applications. In this article, we report the synthesis and electromagnetic characterization of single-crystalline vanadium trichloride, VCl$_3$, a novel 2D layered vdW Mott insulator, which has a rhombohedral structure (R$\overline{3}$, No. 148) at room temperature. VCl$_3$ undergoes a structural phase transition at 103 K and a subsequent antiferromagnetic transition at 21.8 K. Combining core levels and valence bands x-ray photoemission spectroscopy (XPS) with first-principles density functional theory (DFT) calculations, we demonstrate the Mott Hubbard insulating nature of VCl$_3$ and the existence of electron small 2D magnetic polarons localized on V atom sites by V-Cl bond relaxation. The polarons strongly affect the electromagnetic properties of VCl$_3$ promoting the occupation of dispersion-less spin-polarized V-3d $a_{1g}$ states and band inversion with $e^{'}_{g}$ states. Within the polaronic scenario, it is possible to reconcile different experimental evidences on vanadium trihalides, suggesting that also VI$_3$ hosts polarons. Our results highlight the complex physical behavior of this class of crystals determined by charge trapping, lattice distortions, correlation effects, mixed valence states, and magnetic states.",2301.06501v4 2023-02-23,"YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, vanadium-based kagome metals with Yb$^{2+}$ and Eu$^{2+}$ zig-zag chains","Here we present YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, two new compounds exhibiting slightly distorted vanadium-based kagome nets interleaved with zig-zag chains of divalent Yb$^{2+}$ and Eu$^{2+}$ ions. Single crystal growth methods are reported alongside magnetic, electronic, and thermodynamic measurements. YbV$_3$Sb$_4$ is a nonmagnetic metal with no collective phase transitions observed between 60mK and 300K. Conversely, EuV$_3$Sb$_4$ is a magnetic kagome metal exhibiting easy-plane ferromagnetic-like order below $T_\text{C}$=32K with signatures of noncollinearity under low field. Our discovery of YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$ demonstrate another direction for the discovery and development of vanadium-based kagome metals while incorporating the chemical and magnetic degrees of freedom offered by a rare-earth sublattice.",2302.12354v3 2023-09-12,"Pentagon, Hexagon, or Bridge? Identifying the Location of a Single Vanadium Cation on Buckminsterfullerene Surface","Buckminsterfullerene C60 has received extensive research interest ever since its discovery. In addition to its interesting intrinsic properties of exceptional stability and electron-accepting ability, the broad chemical tunability by decoration or substitution on the C60-fullerene surface makes it a fascinating molecule. However, to date there is uncertainty about the binding location of such decorations on the C60 surface, even for a single adsorbed metal atom. In this work, we report the gas-phase synthesis of the C60V+ complex and its in-situ characterization by mass spectrometry and in-frared spectroscopy with the help of quantum chemical calculations and molecular dynamics simulations. We identify the most probable binding position of a vanadium cation on C60 above a pentagon center in eta5-fashion, demonstrate a high thermal stability for this complex, and explore the bonding nature between C60 and the vanadium cation, reveal-ing that large orbital and electrostatic interactions lie at the origin of the stability of the eta5-C60V+ complex.",2309.05890v1 2023-09-20,Effects of disorder on the magnetic properties of the Heusler alloy V$_{2}$FeAl,"Magnetic properties of multicomponent alloys depend sensitively on the degree of atomic order on the different crystallographic sites. In this work we demonstrate the magnetic contrast between bulk and thin-film samples of the Heusler alloy V$_{2}$FeAl. Arc-melted bulk ingots show practically no site preference of the elements (A2 structure), whereas magnetron-sputtered thin-film samples display a higher degree of atomic ordering with a tendency towards XA-type order. Electronic structure calculations favour ferrimagnetic XA-type ordering, and the effect of different pairwise atomic disorder on the element specific and net magnetic moments are evaluated to reproduce experimental observations. XA-type thin-films with iron moment of 1.24 $\mu_{\mathrm{B}}$ determined by X-ray magnetic circular dichroism are in agreement with calculation, but the measured net moment of 1.0 $\mu_{\mathrm{B}}$ per formula unit and average vanadium moment are smaller than expected from calculations. The measured Curie temperature is approximately 500 K. Films with a higher degree of disorder have a T$_{\mathrm{C}}$ close to 300 K with a net moment of 0.1 $\mu_{\mathrm{B}}$ at low temperature. The large calculated vanadium moments are destroyed by partial disorder on $4d$ vanadium sites. By contrast, the arc-melted and annealed bulk alloy with a fully-disordered A2 structure shows no spontaneous magnetization; it is a Pauli paramagnet with dimensionless susceptibility $\chi_{\mathrm{v}}=-2.95\times10^{-4}$.",2309.11480v1 2024-01-07,Dynamic Multi Color Switching using Ultrathin Vanadium Oxide on Aluminium based Asymmetric Fabry-Perot Resonant Structure,"Vanadium dioxide ($VO_{2}$) exhibits strong infrared optical switching due to its insulator-metal phase-transition property. However, in the visible wavelengths, it's intrinsic optical switching is quite low. Current research explores solutions like multilayering, intricate structural patterning, high thermal budget processes and costly metals for improved color switching. Nonetheless, the color gamut coverage with these methodologies remains notably limited. This work overcomes these limitations and demonstrates dynamic multi-colour switching covering a large color gamut using a simple, unpatterned, ultrathin ($\sim$ $\frac{\lambda}{14}$, where wavelength $\lambda$ is taken as 575 nm at the center of visible spectrum) asymmetric Fabry-P\'{e}rot structure of $VO_{2}$ on Aluminium (Al). We use the transfer matrix method to design the $VO_{2}/Aluminium\,(Al)/Sapphire$ structure for maximum visible reflectance switching. $VO_{2}$ films are synthesized using a simple, low thermal budget atmospheric oxidation of Vanadium (V). With varying oxidation durations, different colors of the oxidized samples are observed. Consistent and reversible color-switching is observed visibly and in reflectance measurements with the change in temperature from low (RT $\sim$ 30$^{\circ}$C) to high (HT $\sim$ 100$^{\circ}$C) or vice versa due to the phase transition property of the $VO_{2}$ layer in the structure. Compared to the existing studies, this work shows a significant change in chromaticities and covers a large color gamut when plotted on the CIE chromaticity diagram. This work has potential applications in the fields of display, thermochromic structures, and visible camouflage.",2401.03543v1 2024-02-02,Decoupled few-femtosecond phase transitions in vanadium dioxide,"The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily driven by the electronic or structural degree of freedom, but measurements to date have been stymied by their sensitivity to only one of these components and/or their limited temporal resolution. Here we use ultra-broadband few-femtosecond pump-probe spectroscopy to resolve the electronic and structural phase transitions in VO2 at their fundamental time scales. We find that the system transforms into a bad-metallic phase within 10 fs after photoexcitation, but requires another 100 fs to complete the transition, during which we observe electronic oscillations and a partial re-opening of the bandgap, signalling a transient semi-metallic state. Comparisons with tensor-network simulations and density-functional theory calculations show these features originate from oscillations around the equilibrium high-symmetry atomic positions during an unprecedentedly fast structural transition, in which the vanadium dimers separate and untwist with two different timescales. Our results resolve the complete structural and electronic nature of the light-induced phase transition in VO2 and establish ultra-broadband few-femtosecond spectroscopy as a powerful new tool for studying quantum materials out of equilibrium.",2402.01266v2 2024-03-05,Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing,"With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research community. The scalability and the potential to compute beyond the von Neumann model make VO2 especially appealing for implementation in oscillating neural networks for artificial intelligence (AI) applications, to solve constraint satisfaction problems, and for pattern recognition. Its integration into large networks of oscillators on a Silicon platform still poses challenges associated with the stabilization in the correct oxidation state and the ability to fabricate a structure with predictable electrical behavior showing very low variability. In this work, the role played by the different annealing parameters applied by three methods (slow thermal annealing, flash annealing, and rapid thermal annealing), following the vanadium oxide atomic layer deposition (ALD), on the formation of VO2 grains is studied and an optimal substrate stack configuration that minimizes variability between devices is proposed. Material and electrical characterizations are performed on the different films and a step-by-step recipe to build reproducible VO2-based oscillators is presented, which is argued to be made possible thanks to the introduction of a hafnium oxide (HfO2) layer between the silicon substrate and the vanadium oxide layer. Up to seven nearly identical VO2-based devices are contacted simultaneously to create a network of oscillators, paving the way for large-scale implementation of VO2 oscillating neural networks.",2403.02822v1 2009-05-17,Temperature dependence of hydrogen local mode frequencies in the ordering bcc metal hydrides,"A simple physical conception explaining the experimentally observed temperature dependence of the local mode frequencies in the ordering metal hydrides is proposed. Calculations are performed for bcc vanadium deuterides. The model can be applied to other physical phenomena which are related to the hydrogen motion in metal lattices.",0905.2733v1 2020-02-24,Vanadium-based neutron Beam Monitor,"A prototype quasi-parasitic thermal neutron beam monitor based on isotropic neutron scattering from a thin natural vanadium foil and standard $^3$He proportional counters is conceptualized, designed, simulated, calibrated, and commissioned. The European Spallation Source designed to deliver the highest integrated neutron flux originating from a pulsed source is currently under construction in Lund, Sweden. The effort to investigate a vanadium-based neutron beam monitor was triggered by a list of requirements for Beam Monitors permanently placed in the ESS neutron beams in order to provide reliable monitoring at complex beamlines: low attenuation, linear response over a wide range of neutron fluxes, near to constant efficiency for neutron wavelengths in a range of 0.6-10 \r{A}, calibration stability and the possibility to place the system in vacuum are all desirable characteristics. The scattering-based prototype, employing a natural vanadium foil and standard $^3$He proportional counters, was investigated at the V17 and V20 neutron beamlines of the Helmholtz-Zentrum in Berlin, Germany, in several different geometrical configurations of the $^3$He proportional counters around the foil. Response linearity is successfully demonstrated for foil thicknesses ranging from 0.04 mm to 3.15 mm. Attenuation lower than 1% for thermal neutrons is demonstrated for the 0.04 mm and 0.125 mm foils. The geometries used for the experiment were simulated allowing for absolute flux calibration and establishing the possible range of efficiencies for various designs of the prototype. The operational flux limits for the beam monitor prototype were established as a dependency of the background radiation and prototype geometry. The herein demonstrated prototype monitors can be employed for neutron fluxes ranging from $10^3-10^{10}$ n/s/cm$^2$.",2002.10108v1 2024-02-06,Unveiling the charge density wave mechanism in vanadium-based Bi-layered kagome metals,"The charge density wave (CDW), as a hallmark of vanadium-based kagome superconductor AV3Sb5 (A = K, Rb, Cs), has attracted intensive attention. However, the fundamental controversy regarding the underlying mechanism of CDW therein persists. Recently, the vanadium-based bi-layered kagome metal ScV6Sn6, reported to exhibit a long-range charge order below 94 K, has emerged as a promising candidate to further clarify this core issue. Here, employing micro-focusing angle-resolved photoemission spectroscopy ({\mu}-ARPES) and first-principles calculations, we systematically studied the unique CDW order in vanadium-based bi-layered kagome metals by comparing ScV6Sn6 with its isostructural counterpart YV6Sn6, which lacks a CDW ground state. Combining ARPES data and the corresponding joint density of states (DOS), we suggest that the VHS nesting mechanism might be invalid in these materials. Besides, in ScV6Sn6, we identified multiple hybridization energy gaps resulting from CDW-induced band folding, along with an anomalous band dispersion, implying a potential electron-phonon coupling driven mechanism underlying the formation of the CDW order. Our finding not only comprehensively maps the electronic structure of V-based bi-layer kagome metals but also provide constructive experimental evidence for the unique origin of CDW in this system.",2402.03765v1 2011-12-06,Exchange Parameters in the TCNE-based Magnets as Estimated with use of the Effective Hamiltonian Crystal Field Method,"Estimates of the exchange interaction parameter (J) between electronic magnetic momenta residing in the d-shells of several divalent first row transition metal ions, and those residing on the [TCNE]$^-$. anion-radicals (TCNE = tetracyanoethylene) that are bonded to the metal ion are obtained by the use of the EHCF method in the cluster approximation. The clusters geometry was set according to that observed for Mn$^{II}$(TCNE)$_{1/2}$(I$_3$)$_{1/2}$ and M$^{II}$(TCNE)(C$_4$(CN)$_8$)$_{1/2}$ (M = Fe, Mn) with the [TCNE]$^{-.}$. For the Mn$^{II}$(TCNE)$_{1/2}$(I$_3$)$_{1/2}$ two cluster types are considered: one with the geometry corresponding to [TCNE]$^{-.}$ in the two-dimensional layer, and another connecting the layers. For M$^{II}$(TCNE)(C$_4$(CN)$_8$)$_{1/2}$ only the layer position of the [TCNE]$^{-.}$ is considered. In all cases the LUMO (singly filled in the material) is predominantly concentrated on the ethylenic C-C bond and is antibonding. The J value for the Mn$^{II}$(TCNE)$_{1/2}$(I$_3$)$_{1/2}$ layer is at least as twice as strong as one for the similar geometry for M$^{II}$(TCNE)(C$_4$(CN)$_8$)$_{1/2}$. The correct order of magnitude of the calculated exchange parameters, as compared with those extracted from experimentsindicates the general validity of this approach. However, the direct comparison of these J values with the critical temperatures is not possible since these latter heavily depend on details of the interlayer coupling not available through the EHCF procedure. In order to get more information on the geometry dependence of the exchange parameters, the dependence on the tilt angle of the TCNE with respect to the plane formed by the metal ions and four equatorial NCMe groups was investigated. In all cases, a remarkably strong dependence, having different trends depending on the number of electrons in the d-shells of respective transition metal ions was observed.",1112.1362v1 2014-01-14,Charge transfer excitations from excited state Hartree-Fock subsequent minimization scheme,"Photoinduced charge-transfer processes play a key role for novel photovoltaic phenomena and devices. Thus, the development of ab initio methods that allow for an accurate and computationally inexpensive treatment of charge-transfer excitations is a topic that nowadays attracts a lot of scientific attention. In this paper we extend an approach recently introduced for the description of single and double excitations (M. Tassi, I. Theophilou and S. Thanos, Int. J. Quantum Chem., (113), 690 (2013), M. Tassi, I. Theophilou and S. Thanos, J. Chem. Phys. (138), 124107 (2013)) to allow for the description of intermolecular charge-transfer excitations. We describe an excitation where an electron is transferred from a donor system to an acceptor one, keeping the excited state orthogonal to the ground state and avoiding variational collapse. These conditions are achieved by decomposing the space spanned by the Hartree-Fock (HF) ground state orbitals into four subspaces: The subspace spanned by the occupied orbitals that are localized in the region of the donor molecule, the corresponding for the acceptor ones and two more subspaces containing the virtual orbitals that are localized in the neighborhood of the donor and the acceptor, respectively. Next, we create a Slater determinant with a hole in the subspace of occupied orbitals of the donor and a particle in the virtual subspace of the acceptor. Subsequently we optimize both the hole and the particle by minimizing the HF energy functional in the corresponding subspaces. Finally, we test our approach by calculating the lowest charge-transfer excitation energies for a set of tetracyanoethylene-hydrocarbon complexes, that have been used earlier as a test set for such kind of excitations.",1401.3271v4 2018-04-14,"Effects of Graphene/BN Encapsulation, Surface Functionalization and Molecular Adsorption on the Electronic Properties of Layered InSe: A First-Principles Study","By using first-principles calculations, we investigated the effects of graphene/boron nitride (BN) encapsulation, surface functionalization by metallic elements (K, Al, Mg and typical transition metals) and molecules (tetracyanoquinodimethane (TCNQ) and tetracyanoethylene (TCNE)) on the electronic properties of layered indium selenide (InSe). It was found that an opposite trend of charge transfer is possible for graphene (donor) and BN (acceptor), which is dramatically different from phosphorene where both graphene and BN play the same role (donor). For InSe/BN heterostructure, a change of the interlayer distance due to an out-of-plane compression can effectively modulate the band gap. Strong acceptor abilities to InSe were found for the TCNE and TCNQ molecules. For K, Al and Mg-doped monolayer InSe, the charge transfer from K and Al atoms to the InSe surface was observed, causing an n-type conduction of InSe, while p-type conduction of InSe observed in case of the Mg-doping. The atomically thin structure of InSe enables the possible observation and utilization of the dopant-induced vertical electric field across the interface. A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface. Investigation on the adsorption of transition metal atoms on InSe showed that Ti-, V-, Cr-, Mn-, Co-adsorbed InSe are spin-polarized, while Ni-, Cu-, Pd-, Ag- and Au-adsorbed InSe are non-spin-polarized. Our results shed lights on the possible ways to protect InSe structure and modulate its electronic properties for nanoelectronics and electrochemical device applications.",1804.05180v1 2001-10-18,Strong Quasiparticle Trapping In A 6x6 Array Of Vanadium-Aluminum Superconducting Tunnel Junctions,"A 6x6 array of symmetrical V/Al/AlOx/Al/V Superconducting Tunnel Junctions (STJs) was fabricated. The base electrode is a high quality epitaxial film with a residual resistance ratio (RRR) of ~30. The top film is polycrystalline with an RRR of ~10. The leakage currents of the 25x25 mm^2 junctions are of the order of 0.5 pA/mm^2 at a bias voltage of 100 mV, which corresponds to a dynamical resistance of ~ 3 10^5 ohms. When the array was illuminated by 6 keV X-ray photons from a 55Fe radioactive source the single photon charge output was found to be low and strongly dependent on the temperature of the devices. This temperature dependence at X-ray energies can be explained by the existence of a very large number of quasiparticle (QP) traps in the Vanadium. QPs are confined in these traps, having a lower energy gap than the surrounding material, and are therefore not available for tunneling. The number of traps can be derived from the energy dependence of the responsivity of the devices (charge output per electron volt of photon input energy).",0110374v1 2001-12-02,"Evidence for short range orbital order in paramagnetic insulating (Al,V)_2O_3","The local structure of (Al_0.06V_0.94)_2O_3 in the paramagnetic insulating (PI) and antiferromagnetically ordered insulating (AFI) phase has been investigated using hard and soft x-ray absorption techniques. It is shown that: 1) on a local scale, the symmetry of the vanadium sites in both the PI and the AFI phase is the same; and 2) the vanadium 3d - oxygen 2p hybridization, as gauged by the oxygen 1s absorption edge, is the same for both phases, but distinctly different from the paramagnetic metallic phase of pure V_2O_3. These findings can be understood in the context of a recently proposed model which relates the long range monoclinic distortion of the antiferromagnetically ordered state to orbital ordering, if orbital short range order in the PI phase is assumed. The measured anisotropy of the x-ray absorption spectra is discussed in relation to spin-polarized density functional calculations.",0112016v1 2002-09-30,"Electronic structure of magnetic molecules V15: LDA+U calculations, X-ray emission and photoelectron spectra","Electronic structure of V$_{15}$ magnetic molecules (K$_6$ [V$_{15}$ As$_6$ O$_{42}$ (H$_2$O)] \cdot 8H$_2$O)$ has been studied using LSDA+U band structure calculations, and measurements of X-ray photoelectron (valence band, core levels) and X-ray fluorescence spectra (vanadium K$\beta_5$ and L$_{2,3}$, and oxygen K$\alpha$). Experiments confirm that vanadium ions are tetravalent in V$_{15}$, and their local atomic structure is close to that of CaV$_3$O$_7$. Comparison of experimental data with the results of electronic structure calculations show that the LSDA+U method provides a description of the electronic structure of V$_{15}$ which agrees well with experiments.",0209665v1 2003-01-15,Growth and properties of strained VOx thin films with controlled stoichiometry,"We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.810 {\deg}C range: upon heating, the VO2/sapphire structure emitted less thermal radiation and appeared colder on an infrared camera. We anticipate that emissivity engineering with thin film geometries comprising VO2 will find applications in infrared camouflage, thermal regulation, infrared tagging and labeling.",1305.0033v1 2013-05-16,MicroSQUIDs based on V/Cu/V Josephson nanojunctions,"We report on the fabrication and characterization of microSQUID devices based on nanoscale vanadium/copper/vanadium Josephson weak links. Magnetically driven quantum interference patterns have been measured for temperatures in the 0.24 - 2 K range. As magnetometers, these devices obtain flux-to-voltage transfer function values as high as 450 microV/Phi_0 leading to promising magnetic flux resolution Phi_N < 3 microPhi_0 / Hz^(1/2), being here limited by the room temperature preamplification stage. Significant improvements in the flux noise performance figures, which are already competitive with existing state-of-the-art commercial SQUIDs systems, are expected either with cryogenic preamplification or with the adoption of optimized electronic readout stages based on active feedback schemes.",1305.3863v1 2013-06-18,Gapless spin liquid ground state in the S=1/2 vanadium oxyfluoride kagome antiferromagnet [NH4]2[C7H14N][V7O6F18],"The vanadium oxyfluoride [NH4]2[C7H14N][V7O6F18] (DQVOF) is a geometrically frustrated magnetic bilayer material. The structure consists of S=1/2 kagome planes of V4+ d1 ions with S=1 V3+ d2 ions located between the kagome layers. Muon spin relaxation measurements demonstrate the absence of spin freezing down to 40 mK despite an energy scale of 60 K for antiferromagnetic exchange interactions. From magnetization and heat capacity measurements we conclude that the S=1 spins of the interplane V3+ ions are weakly coupled to the kagome layers, such that DQVOF can be viewed as an experimental model for S=1/2 kagome physics, and that it displays a gapless spin liquid ground state.",1306.4269v1 2013-07-14,Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches,"Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition. It is also found that sharp metal-insulator transition could be triggered by external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.",1307.3774v1 2013-07-22,Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure,"We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST.",1307.5871v1 2013-07-23,Anisotropic Infrared Response of Vanadium Dioxide Microcrystals,"Vanadium dioxide (VO2) undergoes a phase transition at a temperature of 340 K between an insulating monoclinic M1 phase and a conducting rutile phase. Accurate measurements of possible anisotropy of the electronic properties and phonon features of VO2 in the insulating monoclinic M1 and metallic rutile phases are a prerequisite for understanding the phase transition in this correlated system. Recently, it has become possible to grow single domain untwinned VO2 microcrystals which makes it possible to investigate the true anisotropy of VO2. We performed polarized transmission infrared micro-spectroscopy on these untwinned microcrystals in the spectral range between 200 cm-1 and 6000 cm-1 and have obtained the anisotropic phonon parameters and low frequency electronic properties in the insulating monoclinic M1 and metallic rutile phases. We have also performed ab initio GGA+U total energy calculations of phonon frequencies for both phases. We find our measurements and calculations to be in good agreement.",1307.6022v1 2013-10-18,Epitaxial Growth of VO$_{2}$ by Periodic Annealing,"We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change {\Delta}R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.",1310.5021v4 2014-05-13,Hydrogen Ordering and New Polymorph of Layered Perovskite Oxyhydrides: Sr2VO4-xHx,"Compositionally tunable vanadium oxyhydrides Sr2VO4-xHx (x = 0 - 1) without considerable anion vacancy were synthesized by high-pressure solid state reaction. The crystal structures and their properties were characterized by powder neutron diffraction, synchrotron X-ray diffraction, thermal desorption spectroscopy, and first-principles density functional theory (DFT) calculations. The hydrogen anions selectively replaced equatorial oxygen sites in the VO6 layers via statistical substitution of hydrogen in the low x region (x < 0.2). A new orthorhombic phase (Immm) with an almost entirely hydrogen-ordered structure formed from the K2NiF4-type tetragonal phase with x > 0.7. Based on the DFT calculations, the degree of oxygen/hydrogen anion ordering is strongly correlated with the bonding interaction between vanadium and the ligands.",1405.3011v1 2014-07-03,Fast ignition driven by quasi-monoenergetic ions: Optimal ion type and reduction of ignition energies with an ion beam array,"Fast ignition of inertial fusion targets driven by quasi-monoenergetic ion beams is investigated by means of numerical simulations. Light and intermediate ions such as lithium, carbon, aluminium and vanadium have been considered. Simulations show that the minimum ignition energies of an ideal configuration of compressed Deuterium-Tritium are almost independent on the ion atomic number. However, they are obtained for increasing ion energies, which scale, approximately, as Z^2, where Z is the ion atomic number. Assuming that the ion beam can be focused into 10 {\mu}m spots, a new irradiation scheme is proposed to reduce the ignition energies. The combination of intermediate Z ions, such as 5.5 GeV vanadium, and the new irradiation scheme allows a reduction of the number of ions required for ignition by, roughly, three orders of magnitude when compared with the standard proton fast ignition scheme.",1407.1013v1 2014-09-16,Thermally Driven Analog of the Barkhausen Effect at the Metal-Insulator Transition in Vanadium Dioxide,"The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO2 material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO2 powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.",1409.4817v2 2014-11-27,Short-Time Dynamics of Fe2/V13 Magnetic Superlattice Models,"Critical relaxation from a low-temperature fully ordered state of Fe2/V13 iron-vanadium magnetic superlattice models has been studied using the method of short-time dynamics. Systems with three variants of the ratio R of inter- to intralayer exchange coupling have been considered. Particles with N = 262144 spins have been simulated with periodic boundary conditions. Calculations have been performed using the standard Metropolis algorithm of the Monte Carlo method. The static critical exponents of magnetization and correlation radius, as well as the dynamic critical exponent, have been calculated for three R values. It is established that a small decrease in the exchange ratio (from R = 1.0 to 0.8) does not significantly influence the character of the short-time dynamics in the models studied. A further significant decrease in this ratio (to R = 0.01), for which a transition from three-dimensional to quasi-twodimensional magnetism is possible, leads to significant changes in the dynamic behavior of iron-vanadium magnetic superlattice models.",1411.7546v1 2014-12-01,Experimental Verification of Van Vleck Nature of Long-Range Ferromagnetic Order in Vanadium-Doped Three-Dimensional Topological Insulator Sb$_{2}$Te$_{3}$,"We demonstrate by high resolution low temperature electron energy loss spectroscopy (EELS) measurements that the long range ferromagnetic (FM) order in vanadium (V)-doped topological insulator Sb$_2$Te$_3$ has the nature of van Vleck-type ferromagnetism. The positions and the relative amplitudes of two core-level peaks (L$_3$ and L$_2$) of the V EELS spectrum show unambiguous change when the sample is cooled from room temperature to T=10K. Magnetotransport and comparison of the measured and simulated EELS spectra confirm that these changes originate from onset of FM order. Crystal field analysis indicates that in V-doped Sb$_2$Te$_3$, partially filled core states contribute to the FM order. Since van Vleck magnetism is a result of summing over all states, this magnetization of core level verifies the van Vleck-type ferromagnetism in a direct manner.",1412.0636v1 2015-07-10,Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion,"Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ~200 to 23 microV K-1, along with a sharp drop in electrical resistivity (rho), due to the transition from an insulator to a metal. The MI transition temperatures observed both in rho (Trho) and S (TS) for the VO2 films systematically decrease with lattice shrinkage in the pseudo-rutile structure along c-axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than onset Trho. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in rho-measurements. Consequently, S-measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO2.",1507.02752v1 2015-09-01,Novel single phase vanadium dioxide nanostructured films for methane sensing near room temperature,"Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation in O_2 atmosphere at 550 ^oC. The partial pressure of O_2 is controlled to obtain stoichiometric VO_2 with the samples showing rutile monoclinic crystalline symmetry and regions of rod shaped nano-architectures. These nanostructured films exhibit a reversible semiconductor to metal transition in the temperature range of 60-70 ^oC. Gas sensing experiments are carried out in the temperature span from 25 ^oC to 200 ^oC in presence of CH_4. These experiments reveal that the films respond very well at temperatures as low as 50 ^oC, in the semiconducting state.",1509.00203v1 2016-01-27,Induced superconductivity and engineered Josephson tunneling devices in epitaxial (111)-oriented gold/vanadium heterostructures,"We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultra-high vacuum condition, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 4 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bi-layers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructure based p-wave superconductors and nano devices for Majorana fermion.",1601.07591v1 2016-02-24,Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition,"This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.",1602.07408v2 2016-06-10,Unified Band Theoretic Description of Electronic and Magnetic Properties of Vanadium Dioxide Phases,"The debate about whether the insulating phases of vanadium dioxide (VO2) can be described by band theory or must be described by a theory of strong electron correlations remains unresolved even after decades of research. Energy-band calculations using hybrid exchange functionals or including self-energy corrections account for the insulating or metallic nature of different phases, but have not yet successfully accounted for the observed magnetic orderings. Strongly-correlated theories have had limited quantitative success. Here we report that, by using hard pseudopotentials and an optimized hybrid exchange functional, the energy gaps and magnetic orderings of both monoclinic VO2 phases and the metallic nature of the high-temperature rutile phase are consistent with available experimental data, obviating an explicit role for strong correlations. We also report a potential candidate for the newly-found metallic monoclinic phase and present a detailed magnetic structure of the M2 monoclinic phase.",1606.03162v1 2016-07-07,Distributed Authorization in Vanadium,"In this tutorial, we present an authorization model for distributed systems that operate with limited internet connectivity. Reliable internet access remains a luxury for a majority of the world's population. Even for those who can afford it, a dependence on internet connectivity may lead to sub-optimal user experiences. With a focus on decentralized deployment, we present an authorization model that is suitable for scenarios where devices right next to each other (such as a sensor or a friend's phone) should be able to communicate securely in a peer-to-peer manner. The model has been deployed as part of an open-source distributed application framework called Vanadium. As part of this tutorial, we survey some of the key ideas and techniques used in distributed authorization, and explain how they are combined in the design of our model.",1607.02192v2 2016-08-29,The insulating phases of vanadium dioxide are Mott-Hubbard insulators,"We present the first comprehensive broadband optical spectroscopy data on two insulating phases of vanadium dioxide (VO2): monoclinic M2 and triclinic. The main result of our work is that the energy gap and the electronic structure are essentially unaltered by the first-order structural phase transition between the M2 and triclinic phases. Moreover, the optical interband features in the M2 and triclinic phases are remarkably similar to those observed in the well-studied monoclinic M1 insulating phase of VO2. As the energy gap is insensitive to the different lattice structures of the three insulating phases, we rule out Peierls effects as the dominant contributor to the opening of the gap. Rather, the energy gap arises from intra-atomic Coulomb correlations.",1608.08227v1 2016-10-13,Activation cross-sections of proton induced reactions on vanadium in the 37-65 MeV energy range,"Experimental excitation functions for proton induced reactions on natural vanadium in the 37-65 MeV energy range were measured with the activation method using a stacked foil irradiation technique. By using high resolution gamma spectrometry cross-section data for the production of $^{51,48}$Cr, $^{48}$V, $^{48,47,46,44m,44g,43}$Sc and $^{43,42}$K were determined. Comparisons with the earlier published data are presented and results predicted by different theoretical codes (EMPIRE and TALYS) are included. Thick target yields were calculated from a fit to our experimental excitation curves and compared with the earlier experimental yield data. Depth distribution curves to be used for thin layer activation (TLA) are also presented.",1610.03954v1 2016-11-16,Electronic Correlations in Vanadium Revealed by Electron-Positron Annihilation Measurements,"The electronic structure of vanadium measured by Angular Correlation of electron-positron Annihilation Radiation (ACAR) is compared with the predictions of the combined Density Functional and Dynamical Mean-Field Theory (DMFT). Reconstructing the momentum density from five 2D projections we were able to determine the full Fermi surface and found excellent agreement with the DMFT calculations. In particular, we show that the local, dynamic self-energy corrections contribute to the anisotropy of the momentum density and need to be included to explain the experimental results.",1611.05361v1 2016-12-02,Highly repeatable nanoscale phase coexistence in vanadium dioxide films,"The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of silicon. For applications, VO2 films are deposited on crystalline substrates to prevent cracking observed in bulk VO2 crystals across the thermally driven MIT. Near the MIT, VO2 films exhibit nanoscale coexistence between metallic and insulating phases, which opens up further potential applications such as memristors, tunable capacitors, and optically engineered devices such as perfect absorbers. It is generally believed that the formation of phase domains must be affected to some extent by random processes which lead to unreliable performance in nanoscale MIT based devices. Here we show that nanoscale randomness is suppressed in the thermally driven MIT in sputtered VO2 films; the observed domain patterns of metallic and insulating phases in the vicinity of the MIT in these films behave in a strikingly reproducible way. This result opens the door for realizing reliable nanoscale VO2 devices.",1612.00855v1 2016-12-14,Volume Contraction at a Grain Boundary in Vanadium,"It is a conventional wisdom that symmetry breakdown at grain boundaries in crystals introduces volume expansion and there has been no confirmed evidence of volume contraction at a grain boundary in any kind of crystals. We report surprising volume contraction at the Sigma3(111) grain boundary in vanadium. The lattice distortion near this grain boundary is found to drive the local structure toward a hypothetical {\omega} phase, which is only slightly less stable than the bcc phase. Compressing lattice constant a of the {\omega}-phase down to the value of bcc, as is the case at the Sigma3(111) grain boundary, results in smaller c than in bcc structure, and hence the volume contraction. We also find such a volume contraction impedes the segregation of Ti and H, while enhances that of Cr, and hence a significant influence on material properties. The discovery adds fundamental new knowledge of condensed matter, and may also point to new techniques in grain boundary engineering of novel materials through volume control.",1612.04498v2 2016-12-23,Theoretical evaluation of [V$^{IV}$(α-C$_3$S$_5$)]${^2-}$ as nuclear-spin sensitive single-molecule spin transistor,"In a straightforward application of molecular nanospintronics to quantum computing, single-molecule spin transistors can be used to measure and control nuclear spin qubits. A jump in the conductance occurs when the electronic spin inverts its polarization, and this happens at a so-called anticrossing between energy levels, which in turn only takes place at a specific magnetic field determined by the nuclear spin state. So far, this procedure has only been implemented for the terbium(III) bis(phthalocyaninato) complex. Here we explore theoretically whether a similar behavior is expected for a highly stable molecular spin qubit, the vanadium tris-dithiolate complex [V$^{IV}$({\alpha}-C$_3$S$_5$)]${^2-}$. We consider such molecule sandwiched into a two-terminal device and determine the spin-dependent conductance. We verify that the transport channel at minimal bias voltage does not overlap with the occupied spin orbitals, indicating that the spin states may survive in the conduction regime. We estimate some physical parameters to guide the experiments, and verify the robustness of the theoretical methodology by applying it to two chemically related vanadium complexes.",1612.08017v2 2017-04-17,\textit{Ab initio} molecular dynamics study of the structural and electronic transition in VO$_2$,"The temperature-induced structural and electronic transformation in VO$_2$ between the monoclinic M1 and tetragonal rutile phases was studied by means of \textit{ab initio} molecular dynamics, based on density functional theory with Hubbard correction (DFT+U). Analysis of the dynamical processes associated with the structural transformation was carried out on the atomic scale by following the time evolution of dimerization amplitudes of vanadium atom chains and the twisting angle of vanadium dimers. The electronic transition was studied by tracing the changes in projected densities of states and their correlation with the evolution of the structural transformation. Our results reveal a strong interconnection between the structural and electronic transformations and show that they take place on the same time scale.",1704.04917v1 2017-05-10,Role of Vanadyl Oxygen in Understanding Metallic Behavior of V2O5(001) Nanorods,"Vanadium pentoxide (V2O5), the most stable member of vanadium oxide family, exhibits interesting semiconductor to metal transition in the temperature range of 530-560 K. The metallic behavior originates because of the reduction of V2O5 through oxygen vacancies. In the present report, V2O5 nanorods in the orthorhombic phase with crystal orientation of (001) are grown using vapor transport process. Among three nonequivalent oxygen atoms in a VO5 pyramidal formula unit in V2O5 structure, the role of terminal vanadyl oxygen (OI) in the formation of metallic phase above the transition temperature is established from the temperature-dependent Raman spectroscopic studies. The origin of the metallic behavior of V2O5 is also understood due to the breakdown of pdpi bond between OI and nearest V atom instigated by the formation of vanadyl OI vacancy, confirmed from the downward shift of the bottom most split-off conduction bands in the material with increasing temperature.",1705.03620v2 2017-05-17,High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys,"Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.",1705.06100v1 2017-11-14,Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies,"We use apertureless scattering near-field optical microscopy (SNOM) to investigate the nanoscale optical response of vanadium dioxide (VO2) thin films through a temperature-induced insulator-to-metal transition (IMT). We compare images of the transition at both mid-infrared (MIR) and terahertz (THz) frequencies, using a custom-built broadband THz-SNOM compatible with both cryogenic and elevated temperatures. We observe that the character of spatial inhomogeneities in the VO2 film strongly depends on the probing frequency. In addition, we find that individual insulating (or metallic) domains have a temperature-dependent optical response, in contrast to the assumptions of a classical first-order phase transition. We discuss these results in light of dynamical mean-field theory calculations of the dimer Hubbard model recently applied to VO2.",1711.05242v1 2018-01-20,Limiting optical diodes enabled by the phase transition of vanadium dioxide,"A limiting optical diode is an asymmetric nonlinear device that is bidirectionally transparent at low power, but becomes opaque when illuminated by sufficiently intense light incident from a particular direction. We explore the use of a phase-transition material, vanadium dioxide (VO2), as an active element of limiting optical diodes. The VO2 phase transition can be triggered by optical absorption, resulting in a change in refractive index orders of magnitude larger than what can be achieved with conventional nonlinearities. As a result, a limiting optical diode based on incident-direction-dependent absorption in a VO2 layer can be very thin, and can function at low powers without field enhancement, resulting in broadband operation. We demonstrate a simple thin-film limiting optical diode comprising a transparent substrate, a VO2 film, and a semi-transparent metallic layer. For sufficiently high incident intensity, our proof-of-concept device realizes broadband asymmetric transmission across the near infrared, and is approximately ten times thinner than the free-space wavelength.",1801.06728v1 2018-07-20,Novel flow field design for vanadium redox flow batteries via topology optimization,"This paper presents a three-dimensional topology optimization method for the design of flow field in vanadium redox flow batteries (VRFBs). We focus on generating a novel flow field configuration for VRFBs via topology optimization, which has been attracted attention as a powerful design tool based on numerical optimization. An attractive feature of topology optimization is that a topology optimized configuration can be automatically generated without presetting a promising design candidate. In this paper, we formulate the topology optimization problem as a maximization problem of the electrode surface concentration in the negative electrode during the charging process. The aim of this optimization problem is to obtain a topology optimized flow field that enables the improvement of mass transfer effect in a VRFB. We demonstrate that a novel flow field configuration can be obtained through the numerical investigation. To clarify the performance of the topology optimized flow field, we investigate the mass transfer effect through the comparison with reference flow fields---parallel and interdigitated flow fields---and the topology optimized flow field. In addition, we discuss the power loss that takes account of the polarization loss and pumping power, at various operating conditions.",1807.07764v1 2018-12-31,Vanadium in yttrium aluminum garnet: charge states and localization in the lattice,"Vanadium ions charge states and their incorporation in the yttrium aluminum garnet Y3Al5O12 (YAG) lattice were studied by the correlated optical absorption and electron paramagnetic resonance (EPR) measurements. In as-grown crystals, the occupation of the V3+ at both the octahedral and tetrahedral aluminum sites was proven. The V3+ to V4+ charge transformation was observed after annealing in air, whereas annealing in the hydrogen atmosphere resulted exclusively in a slight weakening of the V3+ absorption bands due to partial recharge of these ions. Spin Hamiltonian parameters of the V3+ and V4+ ions at the tetrahedral sites including the zero field splitting and the 51V hyperfine constants have been determined using the high-frequency, up to 300 GHz, EPR measurements. From the analysis of the spin Hamiltonian parameters in the framework of the crystal field theory, the ground state energy levels splitting of the V3+ and V4+ ions were calculated. The charge distribution over the tetrahedral V3+ and its nearest oxygen surroundings was found to be strongly inhomogeneous whereas the tetrahedral V4+ ion concentrated the charge with very weak participation of surrounding ligands. Furthermore, the correlation of the optical and EPR data allowed the proper assignment of the optical absorption peaks in YAG:V crystals.",1812.11877v1 2019-02-05,Towards Commercializing Vanadium Dioxide Films: Investigation of the Impact of Different Interface on the Deterioration Process for Largely Extended Service Life,"Long term stability is the most pressing issue that impedes commercialization of Vanadium Dioxide (VO2) based functional films, which show a gradual loss of relative phase transition performance, especially in humid conditions when serving as smart windows. Here, we investigated the impact of different interface on the deterioration process of VO2 films and proposed a novel encapsulation structure for largely extended service life. Hydrophobic and stable hafnium dioxide (HfO2) layers have been incorporated with VO2 films for encapsulated surfaces and cross sections. With modified thickness and structure of HfO2 layers, the degradation process of VO2 can be effectively suppressed. The proposed films can retain stable phase transition performances under high relative humidity (90%) and temperature (60 Celsius) over 100 days, which is equal to about 16 years in the real environment. Improving the stability of VO2 materials is a necessary step towards commercializing production of high performance films for long term use.",1902.01617v1 2019-03-18,Effects of Vanadium doping on BaFe2As2,"We report an investigation of the structural, magnetic and electronic properties of Ba(Fe(1-x)V(x))2As2 using x-ray, transport, magnetic susceptibility and neutron scattering measurements. The vanadium substitutions in Fe sites are possible up to 40\%. Hall effect measurements indicate strong hole-doping effect through V doping, while no superconductivity is observed in all samples down to 2K. The antiferromagnetic and structural transition temperature of BaFe2As2 is gradually suppressed to finite temperature then vanishes at x=0.245 with the emergence of spin glass behavior, suggesting an avoided quantum critical point (QCP). Our results demonstrate that the avoided QCP and spin glass state which were previously reported in the superconducting phase of Co/Ni-doped BaFe2As2 can also be realized in non-superconducting Ba(Fe(1-x)V(x))2As2.",1903.07233v1 2019-04-09,First-principles investigation of spin-phonon coupling in vanadium-based molecular spin qubits,"Paramagnetic molecules can show long spin-coherence times, which make them good candidates as quantum bits. Reducing the efficiency of the spin-phonon interaction is the primary challenge towards achieving long coherence times over a wide temperature range in soft molecular lattices. The lack of a microscopic understanding about the role of vibrations in spin relaxation strongly undermines the possibility to chemically design better performing molecular qubits. Here we report a first-principles characterization of the main mechanism contributing to the spin-phonon coupling for a class of vanadium(IV) molecular qubits. Post Hartree Fock and Density Functional Theory are used to determine the effect of both reticular and intra-molecular vibrations on the modulation of the Zeeman energy for four molecules showing different coordination geometries and ligands. This comparative study provides the first insight into the role played by coordination geometry and ligand field strength in determining the spin-lattice relaxation time of molecular qubits, opening the avenue to a rational design of new compounds.",1904.04922v1 2019-05-25,Actively tunable terahertz electromagnetically induced transparency analogue based on vanadium-oxide-assisted metamaterials,"Recently, phase-change materials (PCMs) have drawn more attention due to the dynamically tunable optical properties. Here, we investigate the active control of electromagnetically induced transparency (EIT) analogue based on terahertz (THz) metamaterials integrated with vanadium oxide (VO2). Utilizing the insulator-to-metal transition of VO2, the amplitude of EIT peak can be actively modulated with a significant modulation depth. Meanwhile the group delay within the transparent window can also be dynamically tuned, achieving the active control of slow light effect. Furthermore, we also introduce independently tunable transparent peaks as well as group delay based on a double-peak EIT with good tuning performance. Finally, based on broadband EIT, the active tuning of quality factor of the EIT peak is also realized. This work introduces active EIT control with more degree of freedom by employing VO2, and can find potential applications in future wireless and ultrafast THz communication systems as multi-channel filters, switches, spacers, logic gates and modulators.",1905.10623v1 2019-09-26,A detailed electronic structure study of Vanadium metal by using different beyond-DFT methods,"We report a detailed electronic structure calculation for Vanadium (V) using DFT, DFT+$U$, $G_0W_0$, $GW_0$ and DFT+DMFT methods. The calculated values of $W$, $U$ and $J$ by cRPA method are $\sim$1.1, $\sim$3.4 and $\sim$0.52 eV, respectively. The comparison between calculated spectra (CS) and experimental spectra (ES) suggests that $W$ ($U$) is more accurate for DFT+$U$ (DFT+DMFT) method. The CS, obtained by these methods, give fairly good agreement with ES for peaks' positions except $GW_0$. The shallowness of the dips lying $\sim$ -1.5 eV and $\sim$1.0 eV in ES are properly explained by DFT+DMFT method only, due to the presence of incoherent $t_{2g}$ states. This work suggests that for the proper explanation of ES, sophisticated many-body theory is needed even for the simple metal.",1909.12267v2 2019-10-19,Wafer-size VO2 film prepared by water-vapor oxidant,"The growth of wafer-scale and uniform monoclinic VO2 film was a challenge if considering the multivalent vanadium atom and the various phase structures of VO2 compound. Directly oxidizing metallic vanadium film in oxygen gas seemed to be an easy way, while the oxidation parameters were extremely sensitive due to the critical preparation window. Here we proposed a facile thermal oxidation by water-vapor to produce wafer-scale VO2 films with high quality. Results indicated that by using the water-vapor oxidant, the temperature window for VO2 growth was greatly broadened. In addition, the obtained wafer-size VO2 film showed very uniform surface and sharp resistance change. The chemical reaction routes with water-vapor were calculated, which favored the VO2 film growth. Our results not only demonstrated that the water-vapor could be used as a modest oxidizing agent, but also showed the unique advantage for large size VO2 film preparation.",1910.08776v3 2019-11-27,"Controlled Preparation, Characterization, and Bandgap Modulation of RF Sputtered Antimony Vanadium Oxide (SbVO4) Thin Films","In this paper, RF sputtered antimony vanadium oxide (SbVO4) thin films and its characterization are reported. High purity sputtering targets were fabricated by sintering a mixture of Sb2O3 and V2O5 powders. Thin films were deposited by reactive sputtering at various temperature and argon/oxygen partial pressures. Several growth parameters and surface chemistry were studied by applying numerous optical and electrochemical characterization technique. It is found that SbVO4 exhibits an indirect band gap in the range of 1.89 eV to 2.36 eV and has desirable valence band position to drive water oxidation reaction under illumination. The bandgap depends heavily on stoichiometry of the film and can be modulated by incorporating controlled amount of oxygen gas in plasma environment. Optimized SbVO4 photoanodes was designed and tested for photoelectrochemical water oxidation catalysis. Preliminary studies show that these electrodes possess n-type catalytic behavior in alkaline media. The prepared SbVO4 thin films, with typical film thickness was around 400 nm, contain nanoparticles having the sizes of 10-15 nm.",1911.12171v1 2019-11-27,Study of RF Sputtered Antimony Alloyed Bismuth Vanadium Oxide (Sb:BiVO4) Thin Films for Enhanced Photoelectrochemical (PEC) performance from Bandgap Modulation to Thickness Optimization,"Monoclinic scheelite bismuth vanadate (BiVO4) is a promising photoanode for water splitting yet the PEC performance is limited due to its relatively higher (2.4 eV) band gap. Here, we successfully decreased its the band gap to 1.72 eV by controlled antimony alloying. Low bandgap antimony alloyed bismuth vanadium oxide (Sb:BiVO4) thin film was prepared by RF sputtering of high purity homemade target, fabricated by solid-state reaction using a mixture of Sb2O3, Bi2O3, and V2O5 powders with desired stoichiometric ratios. Several growth parameters, powder crystallography, post-deposition effects, and surface treatments, thickness dependence, effect of electrolytes on photocorrosion were studied along with its optical and electrochemical characterization. We discovered that Sb:BiVO4 is a direct band gap material in the visible light range (1.72 eV) and a valence band position suitable for driving water oxidation reaction under illumination. Furthermore, hole diffusion length is increased with antimony alloying and achieved optimum thickness of 400 nm for higher photocurrent. The controllably prepared Sb:BiVO4 particles are having the sizes of 10-15 nm in room temperature deposition and can be grown up to 0.5 microns under air annealing.",1911.12191v1 2019-12-03,Multimorphism and gap opening of charge-density-wave phases in monolayer VTe2,"Vanadium dichalcogenides have attracted increasing interests for the charge density wave phenomena and possible ferromagnetism. Here, we report on the multiphase behavior and gap opening in monolayer VTe2 grown by molecular beam epitaxy. Scanning tunneling microscopy and spectroscopy study revealed the (4*4) metallic and gapped (2root3*2root3)charge-density wave pahses with an energy gap of ~40 meV. Through the in-plane condensation of vanadium atoms, the typical star-of-David clusters and truncated triangle-shaped clusters are formed in (4*4) and (2root3*2root3) phases respectively, resulting in different surface morphologies and electronic structures as confirmed by density functional theory calculations with on-site coulomb repulsion. The CDW-driven reorganization of the atomic structure weakens the ferromagnetic superexchange coupling and strengthens the antiferromagnetic exchange coupling on the contrary, suppressing the long-range magnetic order in monolayer VTe2.",1912.01336v1 2019-12-10,Ligand-field contributions to spin-phonon coupling in a family of Vanadium molecular qubits from multi-reference electronic structure theory,"Molecular electronic spins represent one of the most promising building blocks for the design of quantum computing architectures. However, the advancement of this technology requires the increase of spin lifetime at ambient temperature. Spin-phonon coupling has been recognized as the key interaction dictating spin relaxation at high temperature in molecular crystals and the search for chemical-design principles to control such interaction are a fundamental challenge in the field. Here we present a multi-reference first-principles analysis of the g-tensor and the spin-phonon coupling in a series of four exa-coordinate Vanadium(IV) molecular complexes, where the catecholate ligand donor atom is progressively changed from Oxygen to Sulphur, Selenium and Tellurium. A ligand field interpretation of the multi-reference electronic structure theory results made it possible to rationalize the correlation between the molecular g-shifts and the average spin-phonon coupling coefficients, revealing the role of spin-orbit coupling, chemical bond covalency and energy splitting of d-like orbitals in spin relaxation. Our study reveals the simultaneous increase of metal-ligand covalency and electronic excited state energy separation as key elements of an optimal strategy towards long spin-lattice lifetimes in molecular qubits.",1912.04545v1 2020-02-11,Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$,"Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.",2002.04371v1 2020-02-28,Experimental Demonstration of Dynamic Thermal Regulation using Vanadium Dioxide Thin Films,"We present an experimental demonstration of passive, dynamic thermal regulation in a solid-state system with temperature-dependent thermal emissivity switching. We achieve this effect using a multilayered device, comprised of a vanadium dioxide (VO2) thin film on a silicon substrate with a gold back reflector. We experimentally characterize the optical properties of the VO2 film and use the results to optimize device design. Using a calibrated, transient calorimetry experiment we directly measure the temperature fluctuations arising from a time-varying heat load. Under laboratory conditions, we find that the device regulates temperature better than a constant emissivity sample. We use the experimental results to validate our thermal model, which can be used to predict device performance under the conditions of outer space. In this limit, thermal fluctuations are halved with reference to a constant-emissivity sample.",2003.00031v1 2020-03-22,Thermoelectric probe of defect state induced by ionic liquid gating in vanadium dioxide,"Thermoelectric measurements detect the asymmetry between the density of states above and below the chemical potential in a material. It provides insights into small variations in the density of states near the chemical potential, complementing electron transport measurements. Here, combined resistance and thermoelectric power measurements are performed on vanadium dioxide (VO2), a prototypical correlated electron material, under ionic-liquid (IL) gating. With IL gating, charge transport below the metal-to-insulator-transition (MIT) temperature remains in the thermally activated regime, while the Seebeck coefficient exhibits an apparent transition from semiconducting to metallic behavior. The contrasting behavior indicates changes in electronic structure upon IL gating, due to the formation of oxygen defect states. The experimental results are corroborated by numerical simulations based on a model density of states incorporating a gating induced defect band. This study reveals thermoelectric measurements to be a convenient and sensitive probe for the role of defect states induced by IL gating in suppressing the MIT in VO2, which remains benign in charge transport measurements, and possibly for studying defect sates in other materials.",2003.09840v1 2020-05-12,Vanadium gate-controlled Josephson half-wave nanorectifier,"Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links and superconductor-normal metal-superconductor junctions. Here we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a \emph{half-wave} rectifier at $3$ K. Our devices exploit the gate-driven modulation of the critical current of the Josephson junction, and the resulting steep variation of its normal-state resistance, to convert an AC signal applied to the gate electrode into a DC one across the junction. All-metallic superconducting gated rectifiers could provide the enabling technology to realize tunable photon detectors and diodes useful for superconducting electronics circuitry.",2005.05671v1 2020-05-13,Spectrally-Selective Vanadium Dioxide Based Tunable Metafilm Emitter for Dynamic Radiative Cooling,"Dynamic radiative cooling with variable emissive power is experimentally demonstrated in this study by a wavelength-selective tunable metafilm emitter, which consists of an opaque aluminum film, a sputtered silicon spacer, and a thermochromic vanadium dioxide (VO2) layer fabricated by a furnace oxidation method. The temperature-dependent spectral emittance, experimentally obtained from spectral reflectance measurements, clearly shows a pronounced emission peak around 10 um wavelength when the VO2 experiences an insulator-to-metal phase transition near 65C. The tunable metafilm emitter achieves a significant total emittance increase from 0.14 at room temperature to 0.6 at 100C. Theoretical modeling based on thin-film optics indicates that the emission enhancement at high temperatures is realized by Fabry-Perot cavity resonance with the metallic VO2 film. Moreover, a calorimetry-based thermal vacuum experiment was conducted and the enhanced thermal emission of the fabricated tunable metafilm sample was experimentally demonstrated at temperatures higher than the phase transition temperature, compared to black, aluminum and doped silicon samples, whose emittance changes little near room temperatures. The developed tunable metafilm emitter with variable spectrally-selective emittance in the mid-infrared holds great promise for both terrestrial and extraterrestrial dynamic radiative cooling applications.",2005.06140v1 2020-06-06,Controlling Metal-Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry,"Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control oxygen stoichiometry in these materials, especially in thin films. This work demonstrates a high-vacuum gas evolution technique which allows for the modification of oxygen concentration in VOX thin films by carefully tuning thermodynamic conditions. We were able to control the evolution between VO2, V3O5, and V2O3 phases on sapphire substrates, overcoming the narrow phase stability of adjacent Magn\'eli phases. A variety of annealing routes were found to achieve the desired phases and eventually to control the metal-insulator transition (MIT). The pronounced MIT of the transformed films along with the detailed structural investigations based on x-ray diffraction measurements and reciprocal space mapping show that optimal stoichiometry is obtained and stabilized. Using this technique, we find that the thin film V-O phase diagram differs from that of the bulk material due to strain and finite size effects. Our study demonstrates new pathways to strategically tune the oxygen stoichiometry in complex oxides and provides a roadmap for understanding the phase stability of VOX thin films.",2006.03998v1 2020-06-12,Occupation switching of $d$ orbitals probed via hyperfine interactions in vanadium dioxide,"Metal-insulator transition was microscopically investigated by orbital-resolved nuclear magnetic resonance (OR-NMR) spectroscopy in a single crystal of vanadium dioxide VO$_2$. Observations of the anisotropic $^{51}$V Knight shift and the nuclear quadrupole frequency allow us to evaluate orbital-dependent spin susceptibility and $d$ orbital occupations. The result is consistent with the degenerated $t_{2g}$ orbitals in a correlated metallic phase and the $d$ orbital ordering in a nonmagnetic insulating phase. The predominant orbital pointing along the chain facilitates a spin-singlet formation triggering metal-insulator transition. The asymmetry of magnetic and electric hyperfine tensors suggests the $d$ orbital reformation favored by a low-symmetry crystal field, forming a localized molecular orbital. The result highlights the cooperative electron correlation and electron-phonon coupling in Mott transition with orbital degrees of freedom.",2006.07030v1 2020-06-07,A Statistical Description of Nuclear Reaction Models for Medical Radionuclides: the Paradigmatic Case of $^{47}$Sc Production with Thick Vanadium Targets,"We have introduced a tool to describe in a simple and efficient way the outcomes of known nuclear reaction codes. It differs from the customary use where typically a specific single model is selected and the remaining disregarded. The use of simple statistical procedures allows to introduce a more general theoretical evaluation with quantitative uncertainty, constructed on the variability of the built-in theoretical models. We apply the technique to study the production of $^{47}$Sc (a radio-nuclide with potential theranostic applications in nuclear medicine) with a proton beam impinging on a thick natural Vanadium target. We find an energy range with significant production of $^{47}$Sc, and a minimum co-production of $^{46}$Sc, the radioactive contaminant that has to be avoided as much as possible because of its much longer half life than $^{47}$Sc (83.79 d vs 3.3492 d).",2006.07146v1 2020-08-27,Mapping nanoscale charge states and phase domains with quantitative hyperspectral coherent diffractive imaging spectroscopy,"The critical properties of functional materials and nanoscale devices often originate from the coexistence of different thermodynamic phases and / or oxidization states, but sample makeup is seldom completely known a priori. Coherent diffractive imaging (CDI) provides the spatial resolution needed to observe nanoscale coexistence while returning the full amplitude and phase information of an object, but to date lacks the spectral information necessary for composition identification. Here we demonstrate CDI spectroscopy (CDIS), acquiring images of the prototypical quantum material vanadium oxide across the vanadium L2,3 and oxygen K X-ray absorption edges with nanometer scale resolution. Using the hyperspectral X-ray image we show coexistence of multiple oxidization states and phases in a single sample and extract the full complex refractive index of V2O5 and the monoclinic insulating and rutile conducting phases of VO2. These results constrain the role of hidden phases in the insulator-to-metal transition in VO2.",2008.11992v1 2020-08-06,A kinetic description of Vanadium carbide coating formed by the plasma electrolytic method,"The old creation method of this coating is using salt bath for an approximate time of 6 to 10 hours, which means wasting a lot of time and energy while the formation of this coating with the plasma electrolytic method just takes about 15 minutes and it can increase the efficiency strongly on an industrial scale. In this research, the process has been applied on the samples of 1.2436 steel in different periods. Then, thickness of the coating layers has been measured by using SEM images and thermodynamic data of Vanadium carbide formation. These results have been expanded to access and present a confirmed model to predict the thickness of this diffusion-based coating as a function of time and reaction temperature. The proven model can be used to demonstrate and prove the kinetic advantage of this method and also find the optimal value of applying time and temperature.",2010.02706v1 2020-11-16,Topologically stable bimerons and skyrmions in vanadium dichalcogenide Janus monolayers,"We investigate the magnetic phase diagram of 1T-vanadium dichalcogenide monolayers in Janus configuration (VSeTe, VSSe, and VSTe) from first principles. The magnetic exchange, magnetocrystalline anisotropy and Dzyaloshinskii-Moriya interaction (DMI) are computed using density functional theory calculations, while the temperature- and field-dependent magnetic phase diagram is simulated using large-scale atomistic spin modeling in the presence of thermal fluctuations. The boundaries between magnetic ordered phases and paramagnetic phases are determined by cross-analyzing the average topological charge with the magnetic susceptibility and its derivatives. We find that in such Janus monolayers, DMI is large enough to stabilize non-trivial chiral textures. In VSeTe monolayer, an asymmetrical bimeron lattice state is stabilized for in-plane field configuration whereas skyrmion lattice is formed for out-of-plane field configuration. In VSSe monolayer, a skyrmion lattice is stabilized for out-of-plane field configuration. This study demonstrates that non-centrosymmetric van der Waals magnetic monolayers can support topological textures close to room temperature.",2011.07813v1 2020-11-30,Spatially non-homogeneous metallization of VO2: a TDDFT+DMFT analysis,"We provide insights into the atomistic details of the ultrafast spatially-resolved breakdown of the insulating M1 phase in bulk VO2 employing an ab initio technique based on time-dependent density-functional theory and dynamical mean-field theory (DMFT-TDDFT). We find that the system is initially metallized preferentially along the vanadium-dimer chains (CR axis), with a subsequent growth of CR-elongated metallic bubbles. Moreover, we trace the breakdown of the insulating phase to two types of oxygen atoms, resulting from vanadium dimerization, which produce an unusual charge-density modulation in the oxygen-atom chains with significant charge transfer to the inter-dimer distance. These results are in qualitative agreement with experimental data and shed light on the interplay between valence charge and lattice structure and its role in the ultrafast response of strongly correlated insulators.",2011.14864v1 2021-01-09,Interface-Driven Thermo-Electric Switching Performance of VO$^+$ Diffused Soda-Lime Glass,"Strongly confined NaVO$^+$ segregation and its thermo-responsive functionality at the interface between simple sputter-deposited amorphous vanadium oxide thin films and soda-lime glass was substantiated in the present study by in-situ temperature-controlled Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The obtained ToF-SIMS depth profiles provided unambiguous evidence for a reversible transformation that caused systematic switching of the NaVO$^+$/ Na$^+$ and Na$^+$/ VO$^+$ intensities upon cycling the temperature between 25 $^\circ$C and 340 $^\circ$C. Subsequently, NaVO complexes were found to be reversibly formed (at 300 $^\circ$C) in vanadium oxide diffused glass, leading to thermo-responsive electrical behaviour of the thin film glass system. This new segregation -- and diffusion-dependent multifunctionality of NaVO$^+$ -- points towards applications as an advanced material for thermo-optical switches, in smart windows or in thermal sensors.",2101.03330v1 2021-03-23,Doping Concentration Modulation in Vanadium Doped Monolayer Molybdenum Disulfide for Synaptic Transistors,"Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity remains challenging in 2D materials. Here we report in-situ chemical vapor deposition growth of vanadium (V) doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 at%. The key to regulate the doping concentration lies in the use of appropriate V precursors with different doping abilities, which also generate a large-scale uniform doping effect. Artificial synaptic transistors were fabricated by using the heavily doped MoS2 as the channel material for the first time. Synaptic potentiation, depression and repetitive learning processes are mimicked by the gate-tunable channel conductance change in such transistors with abundant V atoms to trap/detrap electrons. This work shows a feasible method to dope monolayer 2D semiconductors and demonstrates their use in artificial synaptic transistors.",2103.12262v1 2021-05-06,Balancing orbital effects and onsite Coulomb repulsion through Na modulations in NaxVO2,"Vanadium oxides have been highly attractive for over half a century since the discovery of the metal insulator transition near room temperatures. Here NaxVO2 is studied through a systematic comparison with other layered sodium metal oxides with early 3d transition metals, first disclosing a unified evolution pattern of Na density waves through in situ XRD analysis. Combining ab-initio simulations and theoretical modelings, a sodium-modulated Peierls-like transition mechanism is then proposed for the bonding formation of metal ion dimers. More importantly, the unique trimer structure in NaxVO2 is shown to be very sensitive to the onsite Coulomb repulsion value, suggesting a delicate balance between strong electronic correlations and orbital effects that can be precisely modulated by both Na compositions and atomic stackings. This unveils a unique opportunity to design strongly correlated materials with tailored electronic transitions through electrochemical modulations and crystallographic designs, to elegantly balance various competition effects. We think the understanding will also help further elucidate complicated electronic behaviors in other vanadium oxide systems.",2105.02416v1 2021-07-07,Optimization of Electrolyte Rebalancing in Vanadium Redox Flow Batteries,"This paper presents a novel algorithm to optimize energy capacity restoration of vanadium redox flow batteries (VRFBs). VRFB technologies can have their lives prolonged through a partially restoration of the lost capacity by electrolyte rebalancing. Our algorithm finds the optimal number and time of these rebalancing services to minimize the service cost, while maximizing the revenues from energy arbitrage. We show that the linearized form of this problem can be analytically solved, and that the objective function is convex. To solve the complete problem, we develop a two-step mixed integer linear programming (MILP) algorithm, which first finds the bounds for optimal number of services and then optimizes the number, and time of the services. We then present a theoretical analysis and optimization results for a case study of energy arbitrage in New York ISO.",2107.03339v1 2021-11-04,Glass-like Electronics in Vanadium Dioxide,"Functional materials can offer new paradigms for miniaturized and energy-efficient electronics, providing a complementary or even alternative platform to metal-oxide-semiconductors. Here we report on electronically accessible long-lived structural states in Vanadium Dioxide that can offer a scheme for data storage and processing. We show that such states can be electrically manipulated and tracked beyond 10,000 seconds after excitation, exhibiting similar features of glasses, which are beyond the classic metastability in Mott systems. Glass-like electronics can potentially overcome some of the fundamental limitations in conventional metal-oxide-semiconductor electronics, and open avenues for neuromorphic computation and multi-level memories.",2111.03181v1 2022-01-20,Spin valve effect in two-dimensional VSe$_2$ system,"Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to the parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe$_2$ was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe$_2$, denoted as H and T, are considered.",2201.08420v1 2022-01-30,Electrolyte Flow Rate Control for Vanadium Redox Flow Batteries using the Linear Parameter Varying Framework,"In this article, an electrolyte flow rate control approach is developed for an all-vanadium redox flow battery (VRB) system based on the linear parameter varying (LPV) framework. The electrolyte flow rate is regulated to provide a trade-off between stack voltage efficiency and pumping energy losses, so as to achieve optimal battery energy efficiency. The nonlinear process model is embedded in a linear parameter varying state-space description and a set of state feedback controllers are designed to handle fluctuations in current during both charging and discharging. Simulation studies have been conducted under different operating conditions to demonstrate the performance of the proposed approach. This control approach was further implemented on a laboratory scale VRB system.",2201.12812v2 2022-02-03,Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams,"We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.",2202.01777v3 2022-03-04,Pressure-induced structural phase transition of vanadium: A revisit from the perspective of ensemble theory,"For realistic crystals, the free energy strictly formulated in ensemble theory can hardly be obtained because of the difficulty in solving the high-dimension integral of the partition function, the dilemma of which makes it even a doubt if the rigorous ensemble theory is applicable to phase transitions of condensed matters. In the present work, the partition function of crystal vanadium under compression up to $320$ GPa at room temperature is solved by an approach developed very recently, and the derived equation of state is in a good agreement with all the experimental measurements, especially the latest one covering the widest pressure range up to $300$ GPa. Furthermore, the derived Gibbs free energy proves the very argument to understand most of the experiments reported in the past decade on the pressure-induced phase transition, and, especially, a novel phase transition sequence concerning three different phases observed very recently and the measured angles of two phases agree with our theoretical results excellently.",2203.02125v1 2022-03-09,"Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization","We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly different compared to the undoped and n-doped crystals. We study the polarization-dependent Raman spectra, polarization-dependent transmission, temperature-dependent photoluminescence in the optical wavelength range and the THz transmission properties in the 0.2 - 2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringence with refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be an ideal material for optical applications in the THz region.",2203.04941v1 2022-05-31,Highly anisotropic magnetism in the vanadium-based kagome metal TbV6Sn6,"RV6Sn6 (R=rare earth) compounds are appealing materials platforms for exploring the interplay between R-site magnetism and nontrivial band topology associated with the nonmagnetic vanadium-based kagome network. Here we present the synthesis and characterization of the kagome metal TbV6Sn6 via single-crystal x-ray diffraction, magnetization, transport, and heat capacity measurements. Magnetization measurements reveal strong, uniaxial magnetic anisotropy rooted in the alignment of Tb3{\AA} moments in the interplane direction below 4.3(2) K. TbV6Sn6 exhibits multiband transport behavior with high mobilities of charge carriers, and our measurements suggest TbV6Sn6 is a promising candidate for hosting Chern gaps driven via the interplay between Tb-site magnetic order and the band topology of the V-site kagome network.",2205.15559v3 2022-06-12,Electronic and magnetic properties of intermetallic Kagome magnets $R$V$_6$Sn$_6$ ($R$ = Tb - Tm),"We present a systematic study of the structure, electronic, and magnetic properties of a new branch of intermetalllic compounds, $R$V$_6$Sn$_6$ ($R$ = Tb - Tm) by using X-ray diffraction, magnetic susceptibility, magnetization, electrical transport, and heat-capacity measurements. These compounds feature a combination of a non-magnetic vanadium kagome sublattice and a magnetic rare-earth triangular sublattice that supports various spin anisotropies based on different $R$ ions. We find magnetic orders for the $R$ = Tb, Dy, and Ho compounds at 4.4, 3, 2.5 K, respectively, while no ordering is detected down to 0.4 K for the $R$ = Er and Tm compounds with easy-plane anisotropies. Electronically, we found no superconductivity or charge ordering transition down to 0.4 K for any member of this family, while all compounds exhibit multi-band transport properties that originate from the band topology of the vanadium kagome sublattice.",2206.05653v1 2022-06-13,Electrically driven reprogrammable vanadium dioxide metasurface using binary control for broadband beam-steering,"Resonant optical phased arrays are a promising way to reach fully reconfigurable metasurfaces in the optical and NIR regimes with low energy consumption, low footprint and high reliability. Continuously tunable resonant structures suffer from inherent drawbacks such as low phase range, amplitude-phase correlation or extreme sensitivity that makes precise control at the individual element level very challenging. In order to bypass these issues, we use 1-bit (binary) control for beam steering for an innovative nano-resonator antenna and explore the theoretical capabilities of such phased arrays. A thermally realistic structure based on vanadium dioxide sandwiched in a metal-insulator-metal structure is proposed and optimized using inverse design to enhance its performance at 1550 nm. Continuous beam steering over 90{\deg} range is successfully achieved using binary control, with excellent agreement with predictions based on the theoretical first principles description of phased arrays. Furthermore a broadband response from 1500 nm to 1700 nm is achieved. The robustness of the design manufacturing imperfections is also demonstrated. This simplified approach can be implemented to optimize tunable nanophotonic phased array metasurfaces based on other materials or phased shifting mechanisms for various functionalities.",2206.06056v1 2022-07-02,Thermal hysteresis in scattering by vanadium-dioxide spheres,"Vanadium dioxide (VO2) transforms from purely monoclinic to purely tetragonal on being heated from 58 deg C to 72 deg C, the transformation being reversible but hysteretic. Electromagnetically, VO2 transforms from a dissipative dielectric to another dissipative dielectric if the free-space wavelength is less than 1100 nm, but from a dissipative dielectric to a plasmonic metal (or vice versa) if the free-space wavelength exceeds 1100 nm. Calculating the extinction, total scattering, absorption, radiation-pressure, back-scattering, and forward-scattering efficiencies of a VO2 sphere, we found clear signatures of thermal hysteresis in (i) the forward-scattering, back-scattering, and absorption efficiencies for free-space wavelength less than 1100 nm, and (ii) the forward-scattering, back-scattering, total scattering, and absorption efficiencies for free-space wavelength more than 1100 nm. Vacuum and null-permittivity quasistates occur between 58 deg C and 72 deg C, when tetragonal VO2 is a plasmonic metal, once each on the heating branch and once each on the cooling branch of thermal hysteresis. But none of the six efficiencies show significant differences between the two quasistates.",2207.00895v1 2022-07-13,Influence of germanium substitution on the structural and electronic stability of the competing vanadium dioxide phases,"We present a density-functional theory (DFT) study of the structural, electronic, and chemical bonding behaviour in germanium (Ge)-doped vanadium dioxide (VO$_2$). Our motivation is to explain the reported increase of the metal-insulator transition temperature under Ge doping and to understand how much of the fundamental physics and chemistry behind it can be captured at the conventional DFT level. We model doping using a supercell approach, with various concentrations and different spatial distributions of Ge atoms in VO$_2$. Our results suggest that the addition of Ge atoms strongly perturbs the high-symmetry metallic rutile phase and induces structural distortions that partially resemble the dimerization of the experimental insulating structure. Our work, therefore, hints at a possible explanation of the observed increase in transition temperature under Ge doping, motivating further studies into understanding the interplay of structural and electronic transitions in VO$_2$.",2207.06153v2 2022-09-20,Characteristics of a Nickel Vanadium redox flow battery Based on COMSOL,"The overpotential, dissociation rate, electrode potential distributions and current density are suggested in this study to analyze the Nickel Vanadium Redox Flow Battery (NVRFB). Due to its large capacity and ecofriendly properties, NVRFB may be a viable option in the present state of energy constraint and environmental pollution. Due to their low cost and high energy density, nickel-based flow batteries have gained popularity. This study demonstrates that the Ni2+/Ni+ and V5+/V4+ ions have a higher rate of dissociation at the membrane and a lower rate at the inlet, where the electrolyte flow velocity is greater; Because the membrane undergoes more oxidation-reduction reactions, the electrolyte flow rate is critical in the redox flow cell; Additionally, we see that when electrode thickness is reduced, current density and electrode potential increase while overpotential decreases; the model's equations are solved using the finite-element method in the COMSOL Multiphysics program. An electrolyte-electrode interface connection is used to simulate the reaction. The dissociation rate indicates that the oxidation-reduction process happens at a lower membrane potential. Improving the electrolyte flow rate enhances battery performance. Compression of the electrodes enhances conductivity and battery performance.",2209.09872v1 2022-10-03,The effect of vanadium substitution on the structural and magnetic properties of (Fe$_{1-x}$V$_{x}$)$_{3}$Ga$_{4}$,"Fe$_{3}$Ga$_{4}$ displays a complex magnetic phase diagram that is sensitive and tunable with both electronic and crystallographic structure changes. In order to explore this tunability, vanadium-doped (Fe$_{1-x}$V$_{x}$)$_{3}$Ga$_{4}$ has been synthesized and characterized. High-resolution synchrotron X-ray diffraction and Rietveld refinement show that samples up to 20\% V-doping remain isostructural to Fe$_{3}$Ga$_{4}$ and display a linear increase in unit cell volume as doping is increased. Magnetic measurements reveal a suppression of the antiferromagnetic helical spin-density wave (SDW) with V-doping, revealed by changes in both the low-temperature ferromagnetic-antiferromagentic (FM-AFM) transition (T$_{1}$) and high-temperature AFM-FM transition (T$_{2}$). At 7.5\% V-doping, the metamagnetic behavior of the helical AFM SDW phase is no longer observed. These results offer an avenue to effective tuning of the magnetic order in Fe$_{3}$Ga$_{4}$ for devices, as well as increased understanding of the magnetism in this system.",2210.01039v1 2022-12-28,Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators,"Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface states of so-called three-dimensional topological ""insulators"". However, the magnetoresistance also shows a hysteresis depending on the sweep rate and the magnetic field direction. Here, we provide evidence that such magnetoresistance hysteresis is enhanced if both three-dimensional bulk states and quasi-two-dimensional topological states contribute to the transport ($x$ = 0 and 0.03), and it is mostly suppressed if the topological states govern transport ($x$ = 0.015). The results are discussed in terms of spin-dependent scattering between the different available states",2212.14078v2 2023-01-10,Short-range order and increased transition temperature in LiVO2 with weakened trimer frustration,"Vanadium atoms in layered LiVO2 form in-plane periodic vanadium trimers at low temperatures, but the trimers appear randomly in the stacking direction because there are many trimer configurations with comparable lattice energy. We detailed an original modeling scheme to represent glassy states with a completely disordered trimer configuration in the stacking structure. Through PDF analysis using this model, we show that the synthesis method can yield two types of low-temperature stacking structures: a completely disordered stacking structure and a short-range order in the stacking structure. The phase transition temperature of the former sample is about 15 K lower than that of the latter. We discuss that this is due to the strong trimer frustration that appears in the sample without short-range order, which suppresses the phase transition temperature, similar to the frustration effect in conventional spin systems.",2301.03833v1 2023-05-30,VO2 Phase Change Electrodes in Li-ion Batteries,"Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation, have not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO2) cathode that undergoes metal-insulator transition due to first-order structural phase transition at accessible temperature of 68{\deg}C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of electrode structure change on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. This opens up new avenues for electrode designs, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to existing classes of battery chemistries that lead to performance deterioration at elevated temperatures.",2305.19002v1 2023-06-29,Kagome surface states and weak electronic correlation in vanadium-kagome metals,"RV6Sn6 (R = Y and lanthanides) with two-dimensional vanadium-kagome surface states is an ideal platform to investigate kagome physics and manipulate the kagome features to realize novel phenomena. Utilizing the micron-scale spatially resolved angle-resolved photoemission spectroscopy and first-principles calculations, we report a systematical study of the electronic structures of RV6Sn6 (R = Gd, Tb, and Lu) on the two cleaved surfaces, i.e., the V- and RSn1-terminated (001) surfaces. The calculated bands without any renormalization match well with the main ARPES dispersive features, indicating the weak electronic correlation in this system. We observe 'W'-like kagome surface states around the Brillouin zone corners showing R-element-dependent intensities, which is probably due to various coupling strengths between V and RSn1 layers. Our finding suggests an avenue for tuning electronic states by interlayer coupling based on two-dimensional kagome lattices.",2306.16724v1 2023-07-18,Room-temperature magnetism and controlled cation distribution in vanadium ferrite thin films,"Spinel oxides demonstrate significant technological promise due to the vast array of interrelated physical properties that their unique structure supports. Specifically, the Fe1+xV2-xO4 spinel system garners extensive interest due to the presence of orbitally ordered states and multiferroism. This study focuses on the elaboration of high-quality Fe2VO4 (x = 1) thin films on MgO substrates via pulsed laser deposition. Structural analyses confirm the epitaxial growth of the films, their high crystallinity and fully strained nature. The cationic distribution and stoichiometry were investigated using Resonant Elastic X-ray Scattering experiments, in conjunction with comprehensive characterization of the films' physical and electrical properties. The films exhibit room-temperature magnetism, with a magnetization consistent with the (Fe3+)Td[Fe2+V3+2]OhO4 inverse spinel structure unveiled by anomalous diffraction. This work represents the inaugural successful deposition of Fe2VO4 thin films, thereby expanding the family of spinel vanadium oxide thin films with a new member that demonstrates room-temperature magnetic properties.",2307.09598v1 2023-09-13,Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal,"Amorphous VO$_x$ films without a hysteretic phase transition are stable with respect to thermal cycling and highly demanded as sensitive elements of the resistive thermometers and microbolometers. In this paper we present simple and low-temperature growth of amorphous vanadium oxide films by reactive electron beam evaporation of vanadium metal in $\sim 10^{-4}$ mBar oxygen atmosphere. The temperature coefficient of the resistivity (TCR) of the films is weakly sensitive to substrate material and temperature and could be tuned by oxygen pressure in the growth chamber up to -2.2\% /K. The resistivity value is stable for months. It depends on the substrate material and substrate temperature during the evaporation. Simplicity and controllability of the method should lead to various laboratory and industrial applications.",2309.07036v1 2023-09-20,Radiative thermal switch via metamaterials made of vanadium dioxide-coated nanoparticles,"In this work, a thermal switch is proposed based on the phase-change material vanadium dioxide (VO2) within the framework of near-field radiative heat transfer (NFRHT). The radiative thermal switch consists of two metamaterials filled with core-shell nanoparticles, with the shell made of VO2. Compared to traditional VO2 slabs, the proposed switch exhibits a more than 2-times increase in the switching ratio, reaching as high as 90.29% with a 100 nm vacuum gap. The improved switching effect is attributed to the capability of the VO2 shell to couple with the core, greatly enhancing heat transfer with the insulating VO2, while blocking the motivation of the core in the metallic state of VO2. As a result, this efficiently enlarges the difference in photonic characteristics between the insulating and metallic states of the structure, thereby improving the ability to rectify the NFRHT. The proposed switch opens pathways for active control of NFRHT and holds practical significance for developing thermal photon-based logic circuits.",2309.10983v1 2023-11-21,Iris Presentation Attack: Assessing the Impact of Combining Vanadium Dioxide Films with Artificial Eyes,"Iris recognition systems, operating in the near infrared spectrum (NIR), have demonstrated vulnerability to presentation attacks, where an adversary uses artifacts such as cosmetic contact lenses, artificial eyes or printed iris images in order to circumvent the system. At the same time, a number of effective presentation attack detection (PAD) methods have been developed. These methods have demonstrated success in detecting artificial eyes (e.g., fake Van Dyke eyes) as presentation attacks. In this work, we seek to alter the optical characteristics of artificial eyes by affixing Vanadium Dioxide (VO2) films on their surface in various spatial configurations. VO2 films can be used to selectively transmit NIR light and can, therefore, be used to regulate the amount of NIR light from the object that is captured by the iris sensor. We study the impact of such images produced by the sensor on two state-of-the-art iris PA detection methods. We observe that the addition of VO2 films on the surface of artificial eyes can cause the PA detection methods to misclassify them as bonafide eyes in some cases. This represents a vulnerability that must be systematically analyzed and effectively addressed.",2311.12773v1 2023-12-11,High-speed sensing of RF signals with phase change materials,"RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well as off-stoichiometric vanadium oxide films can be modulated with RF wave exposures from a distance. The response of the materials to the RF waves can be enhanced by either increasing the power received by the sample or reducing channel separation. We report a significant ~73% drop in resistance with a 5 {\mu}m channel gap of the VO2 film at a characteristic response time of 16 microseconds. The peak sensitivity is proximal to the phase transition temperature boundary that can be engineered via doping and crystal chemistry. Dynamic sensing measurements highlight the films' rapid response and broad-spectrum sensitivity. Engineering electronic phase boundaries in correlated electron systems could offer new capabilities in emerging communication technologies.",2312.06459v1 2023-12-19,Study on electromagnetically induced transparency effects in Dirac and VO$_2$ hybrid material structure,"In this paper, we present a metamaterial structure of Dirac and vanadium dioxide and investigate its optical properties using the finite-difference time-domain (FDTD) technique. Using the phase transition feature of vanadium dioxide, the design can realize active tuning of the PIT effect at terahertz frequency, thereby converting from a single PIT to a double PIT. When VO$_2$ is in the insulating state, the structure is symmetric to obtain a single-band PIT effect; When VO$_2$ is in the metallic state, the structure turns asymmetric to realize a dual-band PIT effect. This design provides a reference direction for the design of actively tunable metamaterials. Additionally, it is discovered that the transparent window's resonant frequency and the Dirac material's Fermi level in this structure have a somewhat linear relationship. In addition, the structure achieves superior refractive index sensitivity in the terahertz band, surpassing 1 THz/RIU. Consequently, the concept exhibits encouraging potential for application in refractive index sensors and optical switches.",2312.11814v1 2024-01-10,Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals,"Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with non-trivial collective properties. Here, we report the discovery of discrete threshold switching voltages with constant threshold voltage difference between cycles in vanadium oxide crystals. The observed threshold fields over 10000 cycles are ~100X lower than that noted for stoichiometric VO2 and show unique discrete behaviour. We correlate the observed discrete memristor behaviour with the valence change mechanism and fluctuations in the chemical composition of spatially distributed VO2-VnO2n-1 complex oxide phases. Design of chemical heterogeneity in Mott insulators, therefore, offers an intriguing path to realizing low-energy neuromorphic devices.",2401.05222v1 2024-02-20,Single-site DFT+DMFT for vanadium dioxide using bond-centered orbitals,"We present a combined density-functional theory and single-site dynamical mean-field theory (DMFT) study of vanadium dioxide (VO$_2$) using an unconventional set of bond-centered orbitals as the basis of the correlated subspace. VO$_2$ is a prototypical material undergoing a metal-insulator transition (MIT), hosting both intriguing physical phenomena and the potential for industrial applications. With our choice of correlated subspace basis, we investigate the interplay of structural dimerization and electronic correlations in VO$_2$ in a computationally cheaper way compared to other state-of-the-art methods such as cluster DMFT. Our approach allows us to treat the rutile and M1 monoclinic VO$_2$ phases on an equal footing and to vary the dimerizing distortion continuously, exploring the energetics of the transition between the two phases. The choice of basis presented in this work hence offers a complementary view on the long-standing discussion of the MIT in VO$_2$ and suggests possible future extensions to other similar materials hosting molecular-orbital-like states.",2402.12798v1 2024-03-02,Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model,"Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization analyses and applied Chua's local activity theory to a one-dimensional locally-active vanadium dioxide Mott memristor based on an insulator-to-metal phase transition. This approach allows a connection between the dynamical behaviors of a Mott memristor and its physical device parameters, which could guide materials and device development for neuromorphic circuit applications. We also examined the applicability of local analyses on a second-order circuit consists of a vanadium dioxide memristor coupled to an external reactive element, specifically a parallel capacitor. Finally, we show that global nonlinear techniques including nullclines and phase portraits provide insights on instabilities and persistent oscillations near non-hyperbolic fixed points, such as the creation of a stable limit cycle in a supercritical Hopf bifurcation, with some of the bifurcation characteristics distinctive from the general predictions.",2403.01036v1 2024-03-15,Ultra-high endurance silicon photonic memory using vanadium dioxide,"Silicon photonics arises as a viable solution to address the stringent resource demands of emergent technologies, such as neural networks. Within this framework, photonic memories are fundamental building blocks of photonic integrated circuits that have not yet found a standardized solution due to several trade-off among different metrics such as energy consumption, speed, footprint, or fabrication complexity, to name a few. In particular, a photonic memory exhibiting ultra-high endurance performance (> 10^6 cycles) has been elusive to date. Here, we report an ultra-high endurance silicon photonic memory using vanadium dioxide (VO_2) exhibiting a record cyclability of up to 10^7 cycles without degradation. Moreover, our memory features an ultra-compact footprint below 5 {\mu}m with potential for nanosecond and picojoule programming performance. Our silicon photonic memory could find application in emerging photonic applications demanding high number of memory updates such as photonic neural networks with in-situ training.",2403.10162v1 2009-10-12,Frustrated square lattice with spatial anisotropy: crystal structure and magnetic properties of PbZnVO(PO4)2,"Crystal structure and magnetic properties of the layered vanadium phosphate PbZnVO(PO4)2 are studied using x-ray powder diffraction, magnetization and specific heat measurements, as well as band structure calculations. The compound resembles AA'VO(PO4)2 vanadium phosphates and fits to the extended frustrated square lattice model with the couplings J(1), J(1)' between nearest-neighbors and J(2), J(2)' between next-nearest-neighbors. The temperature dependence of the magnetization yields estimates of averaged nearest-neighbor and next-nearest-neighbor couplings, J(1) ~ -5.2 K and J(2) ~ 10.0 K, respectively. The effective frustration ratio alpha=J(2)/J(1) amounts to -1.9 and suggests columnar antiferromagnetic ordering in PbZnVO(PO4)2. Specific heat data support the estimates of J(1) and J(2) and indicate a likely magnetic ordering transition at 3.9 K. However, the averaged couplings underestimate the saturation field, thus pointing to the spatial anisotropy of the nearest-neighbor interactions. Band structure calculations confirm the identification of ferromagnetic J(1), J(1)' and antiferromagnetic J(2), J(2)' in PbZnVO(PO4)2 and yield J(1)'-J(1) ~ 1.1 K in excellent agreement with the experimental value of 1.1 K, deduced from the difference between the expected and experimentally measured saturation fields. Based on the comparison of layered vanadium phosphates with different metal cations, we show that a moderate spatial anisotropy of the frustrated square lattice has minor influence on the thermodynamic properties of the model. We discuss relevant geometrical parameters, controlling the exchange interactions in these compounds, and propose a new route towards strongly frustrated square lattice materials.",0910.2258v1 2011-11-07,Atomic and itinerant effects at the transition metal x-ray absorption K-pre-edge exemplified in the case of V$_2$O$_3$,"X-ray absorption spectroscopy is a well established tool for obtaining information about orbital and spin degrees of freedom in transition metal- and rare earth-compounds. For this purpose usually the dipole transitions of the L- (2p to 3d) and M- (3d to 4f) edges are employed, whereas higher order transitions such as quadrupolar 1s to 3d in the K-edge are rarely studied in that respect. This is due to the fact that usually such quadrupolar transitions are overshadowed by dipole allowed 1s to 4p transitions and, hence, are visible only as minor features in the pre-edge region. Nonetheless, these features carry a lot of valuable information, similar to the dipole L-edge transition, which is not accessible in experiments under pressure due to the absorption of the diamond anvil pressurecell. We recently performed a theoretical and experimental analysis of such a situation for the metal insulator transition of (V(1-x)Crx)2O3. Since the importance of the orbital degrees of freedom in this transition is widely accepted, a thorough understanding of quadrupole transitions of the vanadium K-pre-edge provides crucial information about the underlying physics. Moreover, the lack of inversion symetry at the vanadium site leads to onsite mixing of vanadium 3d- and 4p- states and related quantum mechanical interferences between dipole and quadrupole transitions. Here we present a theoretical analysis of experimental high resolution x-ray absorption spectroscopy at the V pre-K edge measured in partial fluorescence yield mode for single crystals. We carried out density functional as well as configuration interaction calculations in order to capture effects coming from both, itinerant and atomic limits.",1111.1544v1 2014-03-02,Magnons and a two-component spin gap in FeV2O4,"The spinel vanadates have become a model family for exploring orbital order on the frustrated pyrochlore lattice, and recent debate has focused on the symmetry of local crystal fields at the cation sites. Here, we present neutron scattering measurements of the magnetic excitation spectrum in $\mathrm{FeV_2O_4}$, a recent example of a ferrimagnetic spinel vanadate which is available in single crystal form. We report the existence of two emergent magnon modes at low temperatures, which draw strong parallels with the closely related material, $\mathrm{MnV_2O_4}$. We were able to reproduce the essential elements of both the magnetic ordering pattern and the dispersion of the inelastic modes with semi- classical spin wave calculations, using a minimal model that implies a sizeable single-ion anisotropy on the vanadium sublattice. Taking into account the direction of ordered spins, we associate this anisotropy with the large trigonal distortion of $\mathrm{VO_6}$ octahedra, previously observed via neutron powder diffraction measurements. We further report on the spin gap, which is an order-of-magnitude larger than that observed in $\mathrm{MnV_2O_4}$. By looking at the overall temperature dependence, we were able to show that the gap magnitude is largely associated with the ferro-orbital order known to exist on the iron sublattice, but the contribution to the gap from the vanadium sublattice is in fact comparable to what is reported in the Mn compound. This reinforces the conclusion that the spin canting transition is associated with the ordering of vanadium orbitals in this system, and closer analysis indicates closely related physics underlying orbital transitions in $\mathrm{FeV_2O_4}$ and $\mathrm{MnV_2O_4}$.",1403.0269v2 2015-12-08,Terahertz Coded Aperture Mask using a Vanadium Dioxide Bowtie Antenna Array,"Terahertz imaging systems have received substantial attention from the scientific community for their use in astronomy, spectroscopy, plasma diagnostics and security. One approach to designing such systems is to use focal plane arrays. Although the principle of these systems is straightforward, realizing practical architectures has proven deceptively difficult. A different approach to imaging consists of spatially encoding the incoming flux of electromagnetic energy prior to detection using a reconfigurable mask. This technique is referred to as coded aperture or Hadamard imaging. This paper details the design, fabrication and testing of a prototype coded aperture mask operating at WR 1.5 (500 to 750 GHz) that uses the switching properties of vanadium dioxide (VO2). The reconfigurable mask consists of bowtie antennas with vanadium dioxide VO2 elements at the feed points. From the symmetry, a unit cell of the array can be represented by an equivalent waveguide whose dimensions limit the maximum operating frequency. In this design, the cutoff frequency of the unit cell is 640 GHz. The VO2 devices are grown using reactive-biased target ion beam deposition. A reflection coefficient (S11) measurement of the mask in the WR 1.5 (500 to 750 GHz) band is conducted. The results are compared with circuit models and found to be in good agreement. A simulation of the transmission response of the mask is conducted and shows a transmission modulation of up to 28 dB. This project is a first step towards the development of a full coded aperture imaging system operating at WR 1.5 with VO2 as the mask switching element.",1512.02697v1 2018-02-12,"Superconducting transition temperatures in the electronic and magnetic phase diagrams of Sr2VFeAsO3-delta, a superconductor","We elucidate the magnetic phases and superconducting transition temperatures (Tc) in Sr2VFeAsO3-delta (21113V), an iron-based superconductor with a thick-blocking layer fabricated from a perovskite-related transition metal oxide. At low temperatures (T < 37.1 K), 21113V exhibited a superconducting phase in the range 0.031 =< delta =< 0.145 and an antiferromagnetic (AFM) iron sublattice in the range 0.267 =< delta =< 0.664. Mixed-valent vanadium exhibited a dominant AFM phase in 0.031 =< delta =< 0.088, and a partial ferrimagnetic (Ferri.) phase in the range 0.124 =< delta =< 0.664. The Ferri. phase was the most dominant at a delta value of 0.267, showing an AFM phase of Fe at T < 20 K. Increasing the spontaneous magnetic moments reduced the magnetic shielding volume fraction due to the superconducting phase. This result was attributed to the magnetic phase of vanadium, which dominates the superconductivity of Fe in 21113V. The Tc-delta curve showed two maxima. The smaller and larger of Tc maxima occurred at delta = 0.073 and delta = 0.145, respectively; the latter resides on the phase boundary between AFM and the partial Ferri. phases of vanadium. 21113V is a useful platform for verifing new mechanisms of Tc enhancement in iron-based superconductors.",1802.03907v2 2020-08-12,Vanadium Abundance Derivations in 255 Metal-poor Stars,"We present vanadium (V) abundances for 255 metal-poor stars, derived from high-resolution optical spectra from the Magellan Inamori Kyocera Echelle spectrograph on the Magellan Telescopes at Las Campanas Observatory, the Robert G. Tull Coud\'{e} Spectrograph on the Harlan J. Smith Telescope at McDonald Observatory, and the High Resolution Spectrograph on the Hobby-Eberly Telescope at McDonald Observatory. We use updated V I and V II atomic transition data from recent laboratory studies, and we increase the number of lines examined (from 1 to 4 lines of V I, and from 2 to 7 lines of V II). As a result, we reduce the V abundance uncertainties for most stars by more than 20% and expand the number of stars with V detections from 204 to 255. In the metallicity range $-$4.0 $<$ [Fe/H] $< -$1.0, we calculate the mean ratios [V I/Fe I]$ = -0.10 \pm 0.01 (\sigma = 0.16)$ from 128 stars with $\geq$ 2 V I lines detected, [V II/Fe II] $= +0.13 \pm 0.01 (\sigma = 0.16)$ from 220 stars with $\geq$ 2 V II lines detected, and [V II/V I] $= +0.25 \pm 0.01 (\sigma = 0.15)$ from 119 stars. We suspect this offset is due to non-LTE effects, and we recommend using [V II/Fe II], which is enhanced relative to the solar ratio, as a better representation of [V/Fe]. We provide more extensive evidence for abundance correlations detected previously among scandium, titanium, and vanadium, and we identify no systematic effects in the analysis that can explain these correlations.",2008.05500v1 2021-10-19,Graphene-Based Electrodes in a Vanadium Redox Flow Battery Produced by Rapid Low-Pressure Combined Gas Plasma Treatments,"The development of high-power density vanadium redox flow batteries (VRFBs) with high energy efficiencies (EEs) is crucial for the widespread dissemination of this energy storage technology. In this work, we report the production of novel hierarchical carbonaceous nanomaterials for VRFB electrodes with high catalytic activity toward the vanadium redox reactions (VO2+/VO2+ and V2+/V3+). The electrode materials are produced through a rapid (minute timescale) low-pressure combined gas plasma treatment of graphite felts (GFs) in an inductively coupled radio frequency reactor. By systematically studying the effects of either pure gases (O2 and N2) or their combination at different gas plasma pressures, the electrodes are optimized to reduce their kinetic polarization for the VRFB redox reactions. To further enhance the catalytic surface area of the electrodes, single-/few-layer graphene, produced by highly scalable wet-jet milling exfoliation of graphite, is incorporated into the GFs through an infiltration method in the presence of a polymeric binder. Depending on the thickness of the proton-exchange membrane (Nafion 115 or Nafion XL), our optimized VRFB configurations can efficiently operate within a wide range of charge/discharge current densities, exhibiting energy efficiencies up to 93.9%, 90.8%, 88.3%, 85.6%, 77.6%, and 69.5% at 25, 50, 75, 100, 200, and 300 mA cm-2, respectively. Our technology is cost-competitive when compared to commercial ones (additional electrode costs < 100 euro m-2) and shows EEs rivalling the record-high values reported for efficient systems to date. Our work remarks on the importance to study modified plasma conditions or plasma methods alternative to those reported previously (e.g., atmospheric plasmas) to improve further the electrode performances of the current VRFB systems.",2110.10062v1 2022-11-22,"Mixed Integer Linear Program model for optimized scheduling of a vanadium redox flow battery with variable efficiencies, capacity fade, and electrolyte maintenance","Redox Flow Batteries are a promising option for large-scale stationary energy storage. The vanadium redox flow battery is the most widely commercialized system thanks to its chemical stability and performance. This work aims to optimize the scheduling of a vanadium flow battery that stores energy produced by a renewable power plant, keeping into account a thorough characterization of the battery performance, with variable efficiencies and capacity fade effects. A detailed characterization of the battery performance improves the calculation of the optimal number of cycles and revenue associated with the battery use if compared to the results obtained using simpler models, which take into account constant efficiencies and no capacity fade effects. The presented problem is nonlinear due to the functions of the battery efficiency, which depend upon charging and discharging powers and state of charge with nonlinear, non-convex correlations. The problem is linearized using convex hulls. The optimization program also calculates the progressive battery capacity fade due to undesired secondary electrochemical reactions and the economic impact of capacity restoration through periodic maintenance. The final problem is solved as a Mixed-Integer Linear Program (MILP) to guarantee the global optimality of the linearized problem. The proposed optimization model has been applied to two different case studies: a case of energy arbitrage and a case of load-shifting. The optimization results have been compared to those obtained with constant battery efficiency models, which do not consider the capacity fade effects. Results show that simpler models overestimate the optimal number of cycles of the battery and the revenue by up to 15% if they do not take into account the degradation model of the battery, and respectively up to 32% and 42% if they also assume constant efficiency for the battery.",2211.12333v2 2023-05-30,Fluid dynamics of mixing in the tanks of small vanadium redox flow batteries: Insights from order-of-magnitude estimates and transient two-dimensional simulations,"This paper investigates the fluid dynamics of mixing in the tanks of small-scale vanadium redox flow batteries. These systems use two redox pairs dissolved in separate electrolytes to convert electrical energy into chemical energy, a process that can be reversed in an efficient way to restore the initial electrical energy with negligible chemical losses. After flowing through the electrochemical cell, the electrolytes are stored in separate tanks, where they discharge as submerged jets with small temperature and composition changes compared to the electrolyte already present in the tanks. The subsequent mixing process is critical for battery performance, as imperfect mixing tends to reduce the energy capacity and may lead to asymmetric battery operation. The analysis starts using order-of-magnitude estimates to determine the conditions under which the mixing process is dominated by momentum or buoyancy. Transient two-dimensional simulations illustrate the different flow regimes that emerge in the tanks under laminar flow conditions. The results show that, contrary to the common assumption, the electrolytes do not mix well in the tanks. In the presence of high-momentum -- and, specially, positively buoyant -- jets, a significant fraction of the electrolyte remains unmixed and unreacted for long periods, thus reducing the energy capacity. The results also show that the availability of reliable electrolyte properties is crucial for the accuracy of the numerical simulations, as, under the mixed convection conditions that typically prevail in vanadium redox flow batteries, small density variations can significantly impact the long-term mixing of the electrolytes. In particular, in momentum-dominated flows the cumulative effect of density changes over time eventually leads to flow instabilities that significantly promote mixing; therefore, they should be taken into account in future studies.",2305.19071v1 2023-09-21,Zigzag chain order of LiVSe$_2$ developing away from the vanadium trimer phase transition boundary,"The phenomenon of self-assembly of constituent elements to form molecules at low temperatures appears ubiquitously in transition metal compounds with orbital degrees of freedom. Recent progress in local structure studies using synchrotron radiation x-rays is shifting the interest in structural studies in such molecule-forming systems from the low-temperature ordered phase to the short-range order that appears like a precursor at high temperatures. In this study, we discuss both experimentally and theoretically the relationship between the trimer structure that appears in the layered LiV$X_2$ ($X$ = O, S, Se) system with a two-dimensional triangular lattice of vanadium and the zigzag chain-like local structure that appears near the phase transition boundary where molecular formation occurs. The vanadium trimerization that persistently appears in both low-temperature phases of LiVO$_2$ and LiVS$_2$ disappears in LiVSe$_2$, and a regular triangular lattice is thought to be realized in LiVSe$_2$, but this study reveals that the zigzag chain local distortion appears with a finite correlation length. This zigzag chain state local distortions are similar to the motif of local distortions in the high-temperature phase of LiVS$_2$, indicating that the local distortions are persistent away from the trimer phase transition boundary. On the other hand, it is concluded that the zigzag chain order appearing in LiVSe$_2$ is more stable than that in LiVS$_2$ in terms of the temperature variation of atomic displacement and correlation length. The zigzag chain order is considered to be competitive with the trimer order appearing in the LiV$X_2$ system. In this paper, we discuss the similarities and differences between the parameters that stabilize these electronic phases and the local distortions that appear in other molecular formation systems.",2309.11749v1 1995-10-29,Spin Gap of Two-Dimensional Antiferromagnet Representing CaV$_4$O$_9$,"We examined a two-dimensional Heisenberg model with two kinds of exchange energies, $J_e$ and $J_c$. This model describes localized spins at vanadium ions in a layer of CaV$_4$O$_9$, for which a spin gap is found by a recent experiment. Comparing the high temperature expansion of the magnetic susceptibility to experimental data, we determined the exchange energies as $J_e \simeq$ 610 K and $J_c \simeq$ 150 K. By the numerical diagonalization we estimated the spin gap as $\Delta \sim 0.2J_e \simeq$ 120 K, which consists with the experimental value 107 K. Frustration by finite $J_c$ enhances the spin gap.",9510160v1 1997-09-10,Observation of Spin Freezing in CaV4O9 and CaV2O5 by uSR,"We have performed muon spin relaxation and susceptibility measurements of CaV_4O_9 and CaV_2O_5, systems in which spin gap-like behavior has been found. We observe spin freezing in the two compounds below 12K and 50K, respectively. Our results indicate the possibility that a substantial fraction of the of the vanadium magnetic moment is not in a spin singlet sate at low temperatures in either material.",9709123v1 1999-09-03,Effective Dimensionality and Band Structure of alpha-Nav_2o_5 Compound: 1D or 2D?,"The AV_nO_{2n+1} mixed valence compounds (n=1, A=Na) are classified as dimerized layered system with strongly interacting d-electrons of vanadium ions. The derived band gaps, energy dispersion relations and density of electronic states are in a good agreement with available experimental and theoretical data. The correlated band gap provides the insulating state of the high-temperature alpha-NaV_2O_5 phase whereas the state, earlier misrepresented as the spin-Peierls state, is governed, in fact, by opening of the Coulomb gap.",9909046v1 1999-09-24,Biquadratic interactions and spin-Peierls transition in the spin 1 chain LiVGe2O6,"The magnetic susceptibility of a new one-dimensional, S=1 system, the vanadium oxide LiVGe2O6, has been measured. Contrary to previous S=1 chains, it exhibits an abrupt drop at 22 K typical of a spin-Peierls transition, and it is consistent with a gapless spectrum above this temperature. We propose that this behaviour is due to the presence of a significant biquadratic exchange interaction, a suggestion supported by quantum chemistry calculations that take into account the quasi-degeneracy of the t2g levels.",9909357v1 1999-10-25,Electron-phonon and spin-phonon coupling in NaV$_{2}$O$_{5}$: charge fluctuations effect,"We show that the asymmetric crystal environment of the V site in the ladder compound NaV$_{2}$O$_{5}$ leads to a strong coupling of vanadium 3d electrons to phonons. This coupling causes fluctuations of the charge on the V ions, and favors a transition to a charge-ordered state at low temperatures. In the low temperature phase the charge fluctuations modulate the spin-spin superexchange interaction, resulting in a strong spin-phonon coupling.",9910403v1 2000-12-01,Theory for Phase Transitions in Insulating Vanadium Oxide,"We show that the recently proposed S=2 bond model with orbital degrees of freedom for insulating V$_{2}$O$_{3}$ not only explains the anomalous magnetic ordering, but also other mysteries of the magnetic phase transition. The model contains an additional orbital degree of freedom that exhibits a zero temperature quantum phase transtion in the Ising universality class.",0012019v3 2000-12-15,Phase transition in a magnetic field in V2-yO3 (y=0 and 0.04),"The effect of a magnetic field on the two long-range-ordered magnetic phases, the collinear insulating antiferromagnetic (AFI) and the incommensurate metallic transverse spin density wave (SDW), is investigated for the vanadium sesquioxide system. A field of 18 T has little effect on the AFI phase of a nominal V2O3 sample. The transverse SDW phase of V1.96O3 can be suppressed by a 4.6(3)-T magnetic field applied in the plane of spiraling spins, while the same magnetic field applied along the spiral axis has little effect on the SDW phase.",0012297v1 2001-09-06,Transition between orbital orderings in YVO3,"Evidence has been found for a change in the ordered occupation of the vanadium d-orbitals at the 77K phase transition in YVO3, manifested by a change in the type of Jahn-Teller distortion. The orbital ordering above 77K is not destroyed at the magnetic ordering temperature of 116K, but is present as far as a second structural phase transition at 200K. The transition between orbital orderings is caused by an increase in octahedral tilting with decreasing temperature.",0109118v1 2001-10-05,LiV2O4: evidence for two-stage screening,"LiV2O4, a frustrated mixed valent metal (d^1 <-> d^2), is argued to undergo two spin-screening processes. The first quenches the effective spin to produce the spin 1/2 behavior seen below room temperature[1], while the second produces the heavy fermi liquid character seen at low temperatures[2]. We present here a preliminary discussion of a t-J model with strong Hund's coupling of the strongly correlated d-electrons. Valence fluctuations of the Hubbard operators (S = {1/2} <-> 1) combined with the frustration of the underlying corner-shared tetrahedral vanadium lattice are the essential components of our model.",0110115v2 2002-11-08,Hall Effect in Nested Antiferromagnets Near the Quantum Critical Point,"We investigate the behavior of the Hall coefficient in the case of antiferromagnetism driven by Fermi surface nesting, and find that the Hall coefficient should abruptly increase with the onset of magnetism, as recently observed in vanadium doped chromium. This effect is due to the sudden removal of flat portions of the Fermi surface upon magnetic ordering. Within this picture, the Hall coefficient should scale as the square of the residual resistivity divided by the impurity concentration, which is consistent with available data.",0211149v2 2002-11-13,Spin-fluctuations in the quarter-filled Hubbard ring : significances to LiV$_2$O$_4$,"Using the quantum Monte Carlo method, we investigate the spin dynamics of itinerant electrons in the one-dimensional Hubbard system. Based on the model calculation, we have studied the spin-fluctuations in the quarter-filled metallic Hubbard ring, which is aimed at the vanadium ring or chain defined along corner-sharing tetrahedra of LiV$_2$O$_4$, and found the dramatic changes of magnetic responses and spin-fluctuation characteristics with the temperature. Such results can explain the central findings in the recent neutron scattering experiment for LiV$_2$O$_4$.",0211261v1 2003-09-08,Computer Modeling of Electronic Properties of Scroll-like V2O5-based Nanotubes,"Atomic models of quasi-one-dimensional 1D vanadium oxide nanostructures - nanotubes of various morphology (cylinder or scroll-like) formed by rolling (010) single layers of V2O5 are constructed and their electronic properties are studied using the tight-binding band theory. Compared to the cylindrical zigzag (n,0) and armchair (n,n)-like nanotubes, which are uniformly semi-conducting with the bang gap of about 2.5-2.7 eV, the band gap of the scroll-like tubes trends significantly to vanish (up to about 0.1 eV) depending on the atomic configurations of the tubes and inter-wall distances.",0309179v1 2004-01-23,Optical properties and Raman scattering of vanadium ladder compounds,"We investigate electronic and optical properties of the V-based ladder compounds NaV2O5, the iso-structural CaV2O5, as well as MgV2O5, which differs from NaV2O5 and CaV2O5 in the c axis stacking. We calculate ab initio the A_g phonon modes in these compounds as a basis for the investigation of the electron-phonon and spin-phonon coupling. The phonon modes together with the dielectric tensors as a function of the corresponding ion displacements are the starting point for the calculation of the A_g Raman scattering.",0401458v1 2004-02-01,High Resolution Study of Magnetic Ordering at Absolute Zero,"High fidelity pressure measurements in the zero temperature limit provide a unique opportunity to study the behavior of strongly interacting, itinerant electrons with coupled spin and charge degrees of freedom. Approaching the exactitude that has become the hallmark of experiments on classical critical phenomena, we characterize the quantum critical behavior of the model, elemental antiferromagnet chromium, lightly doped with vanadium. We resolve the sharp doubling of the Hall coefficient at the quantum critical point and trace the dominating effects of quantum fluctuations up to surprisingly high temperatures.",0402016v1 2004-05-07,Soliton binding and low-lying singlets in frustrated odd-legged S=1/2 spin tubes,"Motivated by the intriguing properties of the vanadium spin tube Na2V3O7, we show that an effective spin-chirality model similar to that of standard Heisenberg odd-legged S=1/2 spin tubes can be derived for frustrated inter-ring couplings, but with a spin-chirality coupling constant alpha that can be arbitrarily small. Using density matrix renormalization group and analytical arguments, we show that, while spontaneous dimerization is always present, solitons become bound into low-lying singlets as alpha is reduced. Experimental implications for strongly frustrated tubes are discussed.",0405131v1 2004-08-18,Hole dynamics in spin and orbital ordered vanadium perovskites,"Hole dynamics in spin and orbital ordered vanadates with perovskite structure is investigated. A mobile hole coupled to the spin excitation (magnon) in the spin G-type and orbital C-type (SG/OC) ordered phase, and that to the orbital excitation (orbiton) in the spin C-type and orbital G-type (SC/OG) one are formulated on an equal footing. The observed fragile character of the (SG/OC) order is attributed to the orbiton softening caused by a reduction of the taggered magnetic order parameter. It is proposed that the qualitatively different hole dynamics in the two spin-orbital ordered phases in vanadates can be probed by the optical spectra.",0408395v1 2006-01-11,Coulombian disorder in Charge Density Waves,"When unscreened charged impurities are introduced in charge density wave system the long wavelength component of the disorder is long ranged and dominates static correlation functions. We calculate the x-ray intensity and find that it is identical to the one produced by thermal fluctuations in a disorder-free smectic-A. We suggest that this effect could be observed in the blue bronze material K$_{0.3}$MoO$_3$ doped with charged impurities such as Vanadium.",0601239v1 2006-07-16,Lattice and elastic constants of titanium-niobium monoborides containing aluminum and vanadium,"First-principles electronic-structure computes the lattice and elastic constants of single-crystal TiB and NbB and changes with Nb, Ti, Al, and V solutes. The data is built into an interpolation formula for lattice and elastic constants of the quartenary (TiNbAlV)B with dilute Al and V concentrations. The lattice and elastic constants of borides in two Ti alloys containing Nb and Al are predicted from microprobe measurements.",0607398v1 2006-09-14,Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3,"V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser deposition. The XRD analysis is in agreement with R-3c space group. Some of them exhibit the metal / insulator transition characteristic of V2O3 bulk material and others samples exhibit a metallic behavior. For the latter, the XPS analysis indicates an oxidation state of +III for vanadium. There is no metal / insulator transition around 150 K in this sample and a strongly correlated Fermi liquid rho = AT2 behavior of the resistivity at low temperature is observed, with a value of A of 1.2 10-4 ohm cm, 3 times larger than the bulk value at 25 kbar.",0609342v1 2006-12-01,Site-Selective NMR in the Quasi-1D Conductor beta-Sr0.33V2O5,"We report 51V NMR experiments in the metallic phase of the quasi-one-dimensional (1D) conductor beta-Sr0.33V2O5. The Knight shift and the quadrupole splitting of all six vanadium sites were determined as a function of the direction of magnetic field perpendicular to the conducting b-axis. Magnetic properties of the three 1D structural units are remarkably heterogeneous. In particular, the V2 ladder unit shows pronounced charge disproportionation among the two (V2a and V2b) sites. At one of these sites, the absolute value of the Knight shift and 1/(T1T) increase steeply with decreasing temperature, suggesting development of ferromagnetic correlation.",0612017v1 2006-12-30,Low relaxation rate in a low-Z alloy of iron,"The longest relaxation time and sharpest frequency content in ferromagnetic precession is determined by the intrinsic (Gilbert) relaxation rate \emph{$G$}. For many years, pure iron (Fe) has had the lowest known value of $G=\textrm{57 Mhz}$ for all pure ferromagnetic metals or binary alloys. We show that an epitaxial iron alloy with vanadium (V) possesses values of $G$ which are significantly reduced, to 35$\pm$5 Mhz at 27% V. The result can be understood as the role of spin-orbit coupling in generating relaxation, reduced through the atomic number $Z$.",0701004v1 1996-09-25,Strained tetragonal states and Bain paths in metals,"Paths of tetragonal states between two phases of a material, such as bcc and fcc, are called Bain paths. Two simple Bain paths can be defined in terms of special imposed stresses, one of which applies directly to strained epitaxial films. Each path goes far into the range of nonlinear elasticity and reaches a range of structural parameters in which the structure is inherently unstable. In this paper we identify and analyze the general properties of these paths by density functional theory. Special examples include vanadium, cobalt and copper, and the epitaxial path is used to identify an epitaxial film as related uniquely to a bulk phase.",9609008v1 2007-04-05,Phonon instability and structural phase transition in Vanadium under high pressure,"Results of the first-principles calculations are presented for the group-VB metals V, Nb and Ta up to couple of megabar pressure. An unique structural phase transition sequence BCC-->(at 60 GPa) rhombohedral (angle=110.5 degree)-->(at ~ 160 GPa)rhombohedral(angle=108.5 degree)--> (at ~ 430 GPa) BCC is predicted in V. We also find that BCC-V becomes mechanically and vibrationally unstable at around 112 GPa pressure. Similar transitions are absent in Nb and Ta.",0704.0696v1 2007-07-05,Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ($VO_{2}$),"An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both sides of the structural transition, and (b) a history dependent hysteresis loop in $R$ upon thermal cycling. These features are attributed here to transport through a granular network.",0707.0885v1 2008-10-20,Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity,"We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.",0810.3469v1 2009-01-07,Phase-transition driven memristive system,"Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.",0901.0899v2 2009-03-24,Light dynamics in glass-vanadium dioxide nanocomposite waveguides with thermal nonlinearity,"We address the propagation of laser beams in Si02-VO2 nanocomposite waveguides with thermo-optical nonlinearity. We show that the large modifications of the absorption coefficient as well as notable changes of refractive index of VO2 nanoparticles embedded into the SiO2 host media that accompany the semiconductor-to-metal phase transition may lead to optical limiting in the near-infrared wave range.",0903.4150v1 2009-04-17,Electronic properties of superconducting Sr4V2Fe2As2O6 versus Sr4Sc2Fe2As2O6,"First principle FLAPW-GGA calculations have been performed with the purpose to understand the peculiarities of band structure and Fermi surface topology for recently discovered superconductor: Sr4V2Fe2As2O - in comparison with isostructural phase Sr4Sc2Fe2As2O6. Our main finding is that the replacement of Sc on vanadium leads to drastic transformation of electronic, magnetic and conductive properties of these materials: as against non-magnetic Sr4Sc2Fe2As2O6 which is formed from non-magnetic conducting [Fe2As2] and insulating [Sr4Sc2O6] blocks, Sr4V2Fe2As2O6 consists from non-magnetic conducting [Fe2As2] blocks and [Sr4V2O6] blocks which exhibit magnetic half-metallic properties.",0904.2671v1 2011-01-21,One-Dimensional Organometallic V-Anthracene Wire and Its B-N Analogue: Efficient Half-Metallic Spin Filters,"Using density functional theory, we have investigated the structural, electronic and magnetic properties of infinitely periodic organometallic vanadium-anthracene ($[V_2Ant]_\infinity)$ and $[V_4(BNAnt)_2]_\infinity$(where BNAnt is B-N analogue of anthracene) for their possible application in spintronics. From our calculations, we find that one-dimensional $[V_2Ant]_\infinity$ and $[V_4(BNAnt)_2]_\infinity$ wires exhibit robust ferromagnetic half-metallic and metallic behavior, respectively. The finite sized $V_6Ant_2$ and $V_6(BNAnt)_2$ clusters are also found to exhibit efficient spin filter properties when coupled to graphene electrodes on either side.",1101.4115v1 2011-02-17,Ground State of the Quasi-1D \bvs\ resolved by Resonant Magnetic X-ray Scattering,"Resonant-magnetic x-ray scattering (RMXS) near the vanadium $L_{2,3}$-absorption edges has been used to investigate the low temperature magnetic structure of high quality \bvs\ single crystals. Below $T_N$ = 31 K, the strong resonance revealed a triple-incommensurate magnetic ordering at wave vector (0.226 0.226 $\xi$) in the hexagonal notation, with $\xi$ = 0.033. The simulations of the experimental RMXS spectra with a time-dependent density functional theory indicate an antiferromagnetic order with the spins polarized along $a$ in the monoclinic structure.",1102.3589v1 2011-08-17,The hyperfine properties of a hydrogenated Fe/V superlattice,": We study the effect of hydrogen on the electronic, magnetic and hyperfine structures of an iron-vanadium superlattice consisting of three Fe monolayers and nine V monolayers. The contact charge density ({\rho}), the contact hyperfine field (Bhf) and the electronic field gradient (EFG) at the Fe sites for different H locations and H fillings are calculated using the first principle full-potential linear-augmented-plane-wave (FP-LAPW) method . It is found that sizeable changes in the hyperfine properties are obtained only when H is in the interface region.",1108.3388v1 2011-11-02,Alternating spin-orbital order in tetragonal Sr2VO4,"Considering spin-orbit coupling, the tetragonal crystal-field, and all relevant superexchange processes including quantum interference, we derive expressions for the energy levels of the vanadium ions in tetragonal Sr2VO4. The used parameters of the model Hamiltonian allow to describe well the excitation spectra observed in neutron scattering and optical experiments at low temperatures. The free energy exhibits a minimum which corresponds to a novel alternating spin-orbital order with strong thermal fluctuation of the orbital mixing parameter.",1111.0668v1 2011-12-07,VO2 nanosheets: controlling the THz properties through strain engineering,"We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.",1112.1573v1 2012-06-13,Ferromagnetism and orbital order in a topological ferroelectric,"We explore via density functional calculations the magnetic doping of a topological ferroelectric as an unconventional route to multiferroicity. Vanadium doping of the layered perovskite La$_{2}$Ti$_{2}$O$_{7}$ largely preserves electric polarization and produces robust ferromagnetic order, hence proper multiferroicity. The marked tendency of dopants to cluster into chains results in an insulating character at generic doping. Ferromagnetism stems from the symmetry breaking of the multi-orbital V system via an unusual ""antiferro""-orbital order, and from the host's low-symmetry layered structure.",1206.2879v2 2013-03-21,Metal Insulator Transition of Cr doped V2O3 calculated by hybrid density functional,"The electronic structure of vanadium sesquioxide in its different phases has been calculated using the screened exchange (sX) hybrid functional. The hybrid functional reproduces the electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. A fully relaxed supercell model of Cr-doped V2O3 has a polaronic distortion around the substitutional Cr atoms and this local strain drives the PI-PM transition. The PI phase has a calculated band gap of 0.15eV in good agreement with experiment.",1303.5320v1 2013-09-05,Switchable thermal antenna by phase transition,"We introduce a thermal antenna which can be actively switched by phase transition. The source makes use of periodically patterned vanadium dioxide, a metal-insulator phase transition material which supports a surface phonon-polariton (SPP) in the infrared range in its crystalline phase. Using electrodes properly registred with respect to the pattern, the phase transition of VO2 can be localy triggered within few microseconds and the SPP can be diffracted making the thermal emission highly directionnal. This switchable antenna could find broad applications in the domain of active thermal coatings or in those of infrared spectroscopy and sensing.",1309.1263v1 2014-06-11,Self-organized vanadium and nitrogen co-doped titania nanotube arrays with enhanced photocatalytic reduction of CO2 into CH4,"Self-organized V-N co-doped TiO2 nanotube arrays (TNAs) with various doping amount were synthesized by anodizing in association with hydrothermal treatment. Impacts of V-N co-doping on the morphologies, phase structures, and photoelectrochemical properties of the TNAs films were thoroughly investigated. The co-doped TiO2 photocatalysts show remarkably enhanced photocatalytic activity for the CO2 photoreduction to methane under ultraviolet illumination. The mechanism of the enhanced photocatalytic activity is discussed in detail.",1406.2765v1 2014-06-11,Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals,"We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correction term of the DFT+U method. Our derivation provides a theoretical justification for adding a DFT+U-like onsite potential in hybrid DFT calculations to resolve issues caused by overscreening of localized states. The resulting scheme, hybrid- DFT+Vw, is tested for chromium impurity in wurtzite AlN and vanadium impurity in 4H-SiC, which are paradigm examples of systems with different degree of localization between host and impurity orbitals.",1406.2944v1 2015-02-18,Random Field Driven Spatial Complexity at the Mott Transition in VO2,"We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.",1502.05426v1 2016-01-07,First-principles derived complexion diagrams for phase boundaries in doped cemented carbides,"This article reviews a method for calculating an equilibrium interfacial phase diagram depicting regions of stability for different interface structures as function of temperature and chemical potentials. Density functional theory (DFT) is used for interfacial energies, Monte Carlo simulations together with cluster expansions based on DFT results for obtaining configurational free energies, and CALPHAD-type modeling for describing the thermodynamic properties of the adjoining bulk phases. An explicit case, vanadium doped cemented carbides, is chosen to illustrate the progress in the research field and the interfacial diagram, a complexion diagram, for the phase boundary WC(0001)/Co is constructed as function of temperature and chemical potentials.",1601.01588v1 2017-08-10,Silicon waveguide modulator with embedded phase change material,"Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical modulator. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we demonstrate ~ 10 dB broadband modulation with a PCM length of 500 nm.",1708.04297v1 2017-09-13,Electrochemical Impedance Imaging via the Distribution of Diffusion Times,"We develop a mathematical framework to analyze electrochemical impedance spectra in terms of a distribution of diffusion times (DDT) for a parallel array of random finite-length Warburg (diffusion) or Gerischer (reaction-diffusion) circuit elements. A robust DDT inversion method is presented based on Complex Nonlinear Least Squares (CNLS) regression with Tikhonov regularization and illustrated for three cases of nanostructured electrodes for energy conversion: (i) a carbon nanotube supercapacitor, (ii) a silicon nanowire Li-ion battery, and (iii) a porous-carbon vanadium flow battery. The results demonstrate the feasibility of non-destructive ""impedance imaging"" to infer microstructural statistics of random, heterogeneous materials.",1709.04147v1 2018-07-19,New approximation to compute the incoherent scattering function of harmonic lattices,"A new method to compute the incoherent scattering function of harmonic lattices is introduced. It is based in a saddle point approximation for each term of the phonon expansion, and is simple enough to be used in practice. The method gives very accurate results even for the tails of the scattering function, and is more accurate than the usual gaussian approximation, which can be derived from this saddle point approximation in the limit in which the order of the phonon expansion term becomes large. Numerical comparisons are provided using vanadium as a test case.",1807.07330v1 2019-03-02,Reconfigurable Electromagnetic Structures: X-Band and Beyond,"Developing reconfigurable millimeter-wave (mmWave) antennas and devices is an outstanding challenge, with switch technologies being a primary impediment. Recently, it has been shown that vanadium dioxide (VO2), a thermochromic material whose resistance changes with temperature, could provide a path forward in developing reconfigurable mmWave devices. As an initial step towards this vision, we investigate the integration of VO2 switches in reconfigurable components at 15 GHz. In particular, a frequency reconfigurable antenna and a reconfigurable phase shifter are shown. The low loss and minimal parasitics of VO2 technology have the potential to enable devices at 15 GHz and beyond.",1906.03034v1 2019-07-24,Chemical complexity in high entropy alloys: A pair-interaction perspective,"The recently proposed pair-interaction model is applied to study a series of refractory high entropy alloys. The results demonstrate the simplicity, robustness, and high accuracy of this model in predicting the configuration energies of NbMoTaW, NbMoTaWV and NbMoTaWTi. The element-element pair interaction parameters obtained from the linear regression of first-principle data provide a new perspective to understand the strengthening mechanism in HEAs, as revealed by comparing the effects of adding vanadium and titanium. Using the pair-interaction model, an expression for the intrinsic energy fluctuation is derived, which provides guidance on both theoretical modeling and first principles calculation.",1907.10223v1 2019-12-16,On the thermodynamic derivation of Nernst relation,"What is the maximum voltage of a cell with a given electrochemical reaction? The answer to this question has been given more than a century ago by Walther Nernst and bears his name. Unfortunately, the assumptions behind the answer have been forgotten by many authors, which leads to wrong forms of the Nernst relation. Such mistakes can be overcome by applying a correct thermodynamic derivation independently of the form in which the reaction is written. The correct form of Nernst relation is important for instance in modelling of vanadium redox flow batteries or zinc-air batteries. In particular, the presence of corrosion can impact the OCV in the case of zinc-air batteries.",1912.07724v1 2020-01-28,A C/V$_2$O$_5$ core-sheath nanofibrous cathode with mixed-ion intercalation for aluminium-ion batteries,"A new nanofibrous material, consisting of a conductive carbon core and an external layer made of vanadium oxide, has been studied as a cathode for aluminium-ion batteries. The material enables a mixed-ion intercalation mechanism, resulting in the alternating insertion of $\text{Al}^{3+}$ and $\text{AlCl}_4^-$ in the $\text{V}_2\text{O}_5$ and carbon layers, respectively. This is a highly desirable feature for cathode materials which may increase the energy density of future batteries by optimising the utilisation of the electrolyte.",2001.10153v2 2020-03-19,Energy Resolution and Neutron Flux of the 4SEASONS Spectrometer Revisited,"The elastic energy resolution, integrated intensity, and peak intensity of the direct-geometry neutron chopper spectrometer 4SEASONS at Japan Proton Accelerator Research Complex (J-PARC) were re-investigated. This was done with respect to the incident energy and the rotation speed of the Fermi chopper using incoherent scattering of vanadium and simple analytical formulas. The model calculations reproduced the observed values satisfactorily. The present work should be useful for estimating in instrument performance in experiments.",2003.08785v1 2020-04-14,Can Fermi surface nesting alone drive the charge-density-wave transition in monolayer vanadium diselenide?,"We demonstrate that charge-density-wave formation is possible via a purely electronic mechanism in monolayers of the transition metal dichalcogenide 1T-VSe$_2$. Via a renormalization group treatment of an extended Hubbard model we examine the competition of superconducting and density-wave fluctuations as sections of the Fermi surface are tuned to perfect nesting. We find regions of charge-density-wave order when the Heisenberg exchange interaction is comparable to the Coulomb repulsion, and $d$-wave superconductivity for purely repulsive interactions. We discuss the possible role of lattice vibrations in enhancing the effective Heisenberg exchange.",2004.06665v1 2020-06-09,"Evidence of liquid-liquid phase transition in compressed Ar probed by the thermal expansion of Mo, Ta and W at high pressures","The long standing controversy between the melting curves of the bcc Mo,Ta,W and vanadium (V) metals measured by diamond anvil Cells (DAC) and the shock dynamic experiments is explained by the behavior the liquid or solid pressure transmitting mediums compressed by the thermal expansion of the these transition metals. This explains the observed isobaric behavior of the laser heated DAC experiments containing different transmitting mediums reported in the literature, thus solving the standing enigma described in very many publications.",2006.05472v1 2020-07-10,Thermodynamic dislocation theory: Application to bcc-crystals,"This paper presents the thermodynamic dislocation theory containing several modifications over its first version which was originally proposed by Langer, Bouchbinder, and Lookman (2010). Employing a small set of physics-based material parameters identified by the large scale least squares analysis, we show that the theory can fit the stress-strain curves of bcc crystals niobium, tantalum, tungsten, and vanadium over a wide range of temperatures and strain rates.",2007.05429v1 2021-01-18,Electron-hole asymmetry in electron systems with orbital degeneracy and correlated hopping,"Microscopic models of electronic subsystems with orbital degeneracy of energy states and non-diagonal matrix elements of electron interactions (correlated hopping) are considered within the configuration-operator approach. Equations for arbitrary-temperature numerical calculation of the doublon concentration for the integer band filling $n=1$ at different forms of the model density of states are derived. The energy spectra obtained within the Green function method are discussed with special emphasis on the role of correlated hopping in transition from itinerant to localized behavior observed in vanadium Magneli phases V$_n$O$_{2n-1}$, transition-metal dichalcogenides NiS$_{2-x}$Se$_x$, fulleride A$_n$C$_{60}$ systems.",2101.07051v1 2021-06-13,Multi-spectral programmable absorbers,"We designed and demonstrated a multi-spectral programmable perfect absorber that exploits two different phase-change materials. This programmability is possible by resonantly coupling two phase change materials, a Ge2Sb2Te5 layer to vanadium dioxide nanoparticles (VO2 NPs). The perfect absorption is attributed to the coalescence of gap plasmon modes excited between the NPs and waveguide cavity-like modes excited between the film and the NPs. The absorptance peak (>90%) can be tuned to four different infrared (IR) wavelengths from 1906 to 2960 nm by heating the structure to different temperatures. The perfect absorber is reconfigurable, lithography-free, large-scale, polarization-insensitive omnidirectional. Our strategy opens a new path for programmable infrared photonics.",2106.06940v1 2023-01-19,Critical Slowing Down at the Abrupt Mott Transition: When the First-Order Phase Transition Becomes Zeroth-Order and Looks Like Second-Order,"We report that the thermally-induced Mott transition in vanadium sesquioxide shows critical-slowing-down and enhanced variance ('critical opalescence') of the order parameter fluctuations measured through low-frequency resistance-noise spectroscopy. Coupled with the observed increase of also the phase-ordering time, these features suggest that the strong abrupt transition is controlled by a critical-like singularity in the hysteretic metastable phase. The singularity is identified with the spinodal point and is a likely consequence of the strain-induced long-range interaction.",2301.08254v1 2023-11-27,Symmetry breaking in vanadium trihalides,"In the light of new experimental evidence we study the insulating ground state of the $3d^2$-transition metal trihalides VX$_3$ (X=Cl, I). Based on Density Functional Theory with the Hubbard correction (DFT$+U$) we systematically show how these systems host multiple metastable states characterized by different orbital ordering and electronic behaviour. Our calculations reveal the importance of imposing a precondition in the on site $d$ density matrix and of considering a symmetry broken unit cell to correctly take into account the correlation effects in a mean field framework. Furthermore we ultimately found a ground state with the $a_{1g}$ orbital occupied in a distorted VX$_6$ octahedra driven by an optical phonon mode.",2311.16068v1 2001-01-17,One-dimensional dynamics of the d-electrons in $α'$-NaV$_{2}$O$_{5}$,"We have studied the electronic properties of the ladder compound $\alpha'$-NaV$_{2}$O$_{5}$, adopting a joint experimental and theoretical approach. The momentum-dependent loss function was measured using electron energy-loss spectroscopy in transmission. The optical conductivity derived from the loss function by a Kramers-Kronig analysis agrees well with our results from LSDA+U band-structure calculations upon application of an antiferromagnetic alignment of the V~3$d_{xy}$ spins along the legs and an on-site Coulomb interaction U of between 2 and 3 eV. The decomposition of the calculated optical conductivity into contributions from transitions between selected energy regions of the DOS reveals the origin of the observed anisotropy of the optical conductivity. In addition, we have investigated the plasmon excitations related to transitions between the vanadium states within an effective 16 site vanadium cluster model. Good agreement between the theoretical and experimental loss function was obtained using the hopping parameters derived from the tight binding fit to the band-structure and moderate Coulomb interactions between the electrons within the ab plane.",0101256v1 2004-06-02,Orbital and magnetic transitions in geometrically-frustrated vanadium spinels -- Monte Carlo study of an effective spin-orbital-lattice coupled model --,"We present our theoretical and numerical results on thermodynamic properties and the microscopic mechanism of two successive transitions in vanadium spinel oxides $A$V$_2$O$_4$ ($A$=Zn, Mg, or Cd) obtained by Monte Carlo calculations of an effective spin-orbital-lattice model in the strong correlation limit. Geometrical frustration in the pyrochlore lattice structure of V cations suppresses development of spin and orbital correlations, however, we find that the model exhibits two transitions at low temperatures. First, a discontinuous transition occurs with an orbital ordering assisted by the tetragonal Jahn-Teller distortion. The orbital order reduces the frustration in spin exchange interactions, and induces antiferromagnetic correlations in one-dimensional chains lying in the perpendicular planes to the tetragonal distortion. Secondly, at a lower temperature, a three-dimensional antiferromagnetic order sets in continuously, which is stabilized by the third-neighbor interaction among the one-dimensional antiferromagnetic chains. Thermal fluctuations are crucial to stabilize the collinear magnetic state by the order-by-disorder mechanism. The results well reproduce the experimental data such as transition temperatures, temperature dependence of the magnetic susceptibility, changes of the entropy at the transitions, and the magnetic ordering structure at low temperatures. Quantum fluctuation effect is also examined by the linear spin wave theory at zero temperature. The staggered moment in the ground state is found to be considerably reduced from saturated value, and reasonably agrees with the experimental data.",0406039v1 2009-04-02,Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide,"We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the IMT. We present extensive near-field infrared images of phase coexistence in the IMT regime in VO2. We find that the coexisting insulating and metallic regions at a fixed temperature are static on the time scale of our measurements. A novel approach for analyzing the far-field and near-field infrared data within the Bruggeman effective medium theory was employed to extract the optical constants of the incipient metallic puddles at the onset of the IMT. We found divergent effective carrier mass in the metallic puddles that demonstrates the importance of electronic correlations to the IMT in VO2. We employ the extended dipole model for a quantitative analysis of the observed near-field infrared amplitude contrast and compare the results with those obtained with the basic dipole model.",0904.0294v1 2009-07-09,Optical Properties of Correlated Materials -- or Why Intelligent Windows may look Dirty,"Materials with strong electronic Coulomb correlations play an increasing role in modern materials applications. ""Thermochromic"" systems, which exhibit thermally induced changes in their optical response, provide a particularly interesting case. The optical switching associated with the metal-insulator transition of vanadium dioxide, for example, has been proposed for use in numerous applications, ranging from anti-laser shields to ""intelligent"" windows, which selectively filter radiative heat in hot weather conditions. Are present-day electronic structure techniques able to describe, or -- eventually even predict -- such a kind of behavior ? How far are we from materials design using correlated oxides ? These are the central questions we try to address in this article. We review recent attempts of calculating optical properties of correlated materials within dynamical mean field theory, and summarize results for vanadium dioxide obtained within a novel scheme aiming at particularly simple and efficient calculations of optical transition matrix elements within localized basis sets. Finally, by optimizing the geometry of ""intelligent windows"", we argue that this kind of technique can in principle be used to provide guidance for experiments, thus giving a rather optimistic answer to the above questions.",0907.1575v1 2010-06-22,Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer,"Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A reversible unipolar modulation of the channel resistance upon the gate voltage is demonstrated for the first time in optimally engineered devices. The results presented in this work are of relevance towards interpreting gate voltage response in such oxides as well as addressing challenges in advancing gate stack processing for oxide semiconductors.",1006.4373v1 2012-01-18,On the metal-insulator-transition in vanadium dioxide,"Vanadium dioxide (VO$_2$) undergoes a metal-insulator transition (MIT) at 340 K with the structural change between tetragonal and monoclinic crystals as the temperature is lowered. The conductivity $\sigma$ drops at MIT by four orders of magnitude. The low-temperature monoclinic phase is known to have a lower ground-state energy. The existence of a $k$-vector ${\boldsymbol k}$ is prerequisite for the conduction since the ${\boldsymbol k}$ appears in the semiclassical equation of motion for the conduction electron (wave packet). Each wave packet is, by assumption, composed of the plane waves proceeding in the ${\boldsymbol k}$ direction perpendicular to the plane. The tetragonal (VO$_2$)$_3$ unit cells are periodic along the crystal's $x$-, $y$-, and z-axes, and hence there are three-dimensional $k$-vectors. The periodicity using the non-orthogonal bases does not legitimize the electron dynamics in solids. There are one-dimensional ${\boldsymbol k}$ along the c-axis for a monoclinic crystal. We believe this decrease in the dimensionality of the $k$-vectors is the cause of the conductivity drop. Triclinic and trigonal (rhombohedral) crystals have no $k$-vectors, and hence they must be insulators. The majority carriers in graphite are ""electrons"", which is shown by using an orthogonal unit cell for the hexagonal lattice.",1201.3700v1 2012-10-29,Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$,"Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$.",1210.8341v1 2014-05-07,A S=1/2 vanadium-based geometrically frustrated spinel system Li2ZnV3O8,"We report the synthesis and characterization of Li2ZnV3O8, which is a new Zn-doped LiV2O4 system containing only tetravalent vanadium. A Curie-Weiss susceptibility with a Curie-Weiss temperature of CW ~214 K suggests the presence of strong antiferromagnetic correlations in this system. We have observed a splitting between the zero-field cooled ZFC and field cooled FC susceptibility curves below 6 K. A peak is present in the ZFC curve around 3.5 K suggestive of spin-freezing . Similarly, a broad hump is also seen in the inferred magnetic heat capacity around 9 K. The consequent entropy change is only about 8% of the value expected for an ordered S = 1=2 system. This reduction indicates continued presence of large disorder in the system in spite of the large CW, which might result from strong geometric frustration in the system. We did not find any temperature T dependence in our 7Li nuclear magnetic resonance NMR shift down to 6 K (an abrupt change in the shift takes place below 6 K) though considerable T-dependence has been found in literature for LiV2O4- undoped or with other Zn/Ti contents. Consistent with the above observation, the 7Li nuclear spin-lattice relaxation rate 1/T1 is relatively small and nearly T-independent except a small increase close to the freezing temperature, once again, small compared to undoped or 10% Zn or 20% Ti-doped LiV2O4.",1405.1697v2 2014-10-01,Evidence for magnetic clusters in Ni$_{1-x}$V$_{x}$ close to the quantum critical concentration,"The d-metal alloy Ni$_{1-x}$V$_{x}$ undergoes a quantum phase transition from a ferromagnetic ground state to a paramagnetic ground state as the vanadium concentration $x$ is increased. We present magnetization, ac-susceptibility and muon-spin relaxation data at several vanadium concentrations near the critical concentration $x_c \approx11.6%$ at which the onset of ferromagnetic order is suppressed to zero temperature. Below $x_c$, the muon data reveal a broad magnetic field distribution indicative of long-range ordered ferromagnetic state with spatial disorder. We show evidence of magnetic clusters in the ferromagnetic phase and close to the phase boundary in this disordered itinerant system as an important generic ingredient of a disordered quantum phase transition. In contrast, the temperature dependence of the magnetic susceptibility above $x_c$ is best described in terms of a magnetic quantum Griffiths phase with a power-law distribution of fluctuation rates of dynamic magnetic clusters. At the lowest temperatures, the onset of a short-range ordered cluster-glass phase is recognized by an increase in the muon depolarization in transverse fields and maxima in ac-susceptibility.",1410.0094v1 2015-02-16,Low-temperature magnetic ordering and structural distortions in Vanadium Sesquioxide (V$_2$O$_3$),"Vanadium Sesquioxide (V$_2$O$_3$) is an antiferromagnetic insulator below $T_{\mathrm N}\approx$ 155 K. The magnetic order is not of C- or G-type as one would infer from the bipartite character of the hexagonal basal plane in the high-temperature corundum structure. In fact, the N\'eel transition is accompanied by a monoclinic distortion that makes one bond of the honeycomb plane inequivalent from the other two, thus justifying a magnetic structure with one ferromagnetic bond and two antiferromagnetic ones. We show here that the magnetic ordering, the accompanying monoclinic structural distortion, the magnetic anisotropy and also the recently discovered high-pressure monoclinic phase, can all be accurately described by conventional electronic structure calculations within GGA and GGA+U. Our results are in line with DMFT calculations for the paramagnetic phase, which predict that the insulating character is driven by a correlation-enhanced crystal field splitting between $e^\pi_g$ and $a_{1g}$ orbitals that pushes the latter above the chemical potential. We find that the $a_{1g}$ orbital, although almost empty in the insulating phase, is actually responsible for the unusual magnetic order as it leads to magnetic frustration whose effect is similar to a next-nearest-neighbor exchange in a Heisenberg model on a honeycomb lattice.",1502.04555v1 2015-10-28,Systematics in the metal-insulator transition temperatures in vanadium oxides,"Nine of the known vanadium oxides, VO$_{2-1/n}$ (n - a positive or negative integer) with n=2 - 6, 8, 9, $\infty$ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures T$_{MIT}$ (V$_7$O$_{13}$ is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in T$_{MIT}$ as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if T$_{MIT}$ is the absolute value of the difference between T$_M$(n) and T$_P$(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of T$_M$-T$_P$ versus 1/n lie on, or close to, two simple straight lines; one is T$_M$-T$_P$= T$_{\infty}$(7/n-1) for V$_3$O$_5$, V$_4$O$_7$, V$_5$O$_9$, V$_7$O$_{13}$, V$_8$O$_{15}$, V$_9$O$_{17}$ and VO$_2$ and the other is T$_M$-T$_P$= T$_{\infty}$(3/n-1) for V$_2$O$_3$, V$_6$O$_{11}$ and VO$_2$.",1510.08286v1 2016-01-27,Ultrafast THz Field Control of Electronic and Structural Interactions in Vanadium Dioxide,"Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and x-ray scattering we show that these processes can be disentangled in the time domain. Specifically, following intense sub-picosecond electric-field excitation, a partial collapse of the insulating gap occurs within the first ps. Subsequently, this electronic reconfiguration initiates a change in lattice symmetry taking place on a slower timescale. We identify the kinetic energy increase of electrons tunneling in the strong electric field as the driving force, illustrating a novel method to control electronic interactions in correlated materials on an ultrafast timescale.",1601.07490v2 2016-02-19,Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films,"Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 ${\deg}$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 ${\deg}$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.",1602.06340v1 2016-04-08,Detection of H2O and evidence for TiO/VO in an ultra hot exoplanet atmosphere,"We present a primary transit observation for the ultra hot (Teq~2400K) gas giant expolanet WASP-121b, made using the Hubble Space Telescope Wide Field Camera 3 in spectroscopic mode across the 1.12-1.64 micron wavelength range. The 1.4 micron water absorption band is detected at high confidence (5.4 sigma) in the planetary atmosphere. We also reanalyze ground-based photometric lightcurves taken in the B, r', and z' filters. Significantly deeper transits are measured in these optical bandpasses relative to the near-infrared wavelengths. We conclude that scattering by high-altitude haze alone is unlikely to account for this difference, and instead interpret it as evidence for titanium oxide and vanadium oxide absorption. Enhanced opacity is also inferred across the 1.12-1.3 micron wavelength range, possibly due to iron hydride absorption. If confirmed, WASP-121b will be the first exoplanet with titanium oxide, vanadium oxide, and iron hydride detected in transmission. The latter are important species in M/L dwarfs, and their presence is likely to have a significant effect on the overall physics and chemistry of the atmosphere, including the production of a strong thermal inversion.",1604.02310v1 2016-04-14,Ultrafast mid-infrared nanoscopy of strained vanadium dioxide nanobeams,"Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO$_2$) is now finding novel uses in device applications. Two of its most appealing aspects are its accessible transition temperature ($\sim$341 K) and its rich phase diagram. Strain can be used to selectively stabilize different VO$_2$ insulating phases by tuning the competition between electron and lattice degrees of freedom. It can even break the mesoscopic spatial symmetry of the transition, leading to a quasi-periodic ordering of insulating and metallic nanodomains. Nanostructuring of strained VO$_2$ could potentially yield unique components for future devices. However, the most spectacular property of VO$_2$ - its ultrafast transition - has not yet been studied on the length scale of its phase heterogeneity. Here, we use ultrafast near-field microscopy in the mid-infrared to study individual, strained VO$_2$ nanobeams on the 10 nm scale. We reveal a previously unseen correlation between the local steady-state switching susceptibility and the local ultrafast response to below-threshold photoexcitation. These results suggest that it may be possible to tailor the local photo-response of VO$_2$ using strain and thereby realize new types of ultrafast nano-optical devices.",1604.04306v1 2016-06-30,Quantum phase transitions and multicriticality in Ta(Fe1-xVx)2,"We present a comprehensive study of synthesis, structure analysis, transport and thermodynamic properties of the C14 Laves phase Ta(Fe1-xVx)2. Our measurements confirm the appearance of spin-density wave (SDW) order within a dome-like region of the x - T phase diagram with vanadium content 0.02 < x < 0.3. Our results indicate that on approaching TaFe2 from the vanadium-rich side, ferromagnetic (FM) correlations increase faster than the antiferromagnetic (AFM) ones. This results in an exchange-enhanced susceptibility and in the suppression of the SDW transition temperature for x < 0.13 forming the dome-like shape of the phase diagram. This effect is strictly related to a significant lattice distortion of the crystal structure manifested in the c/a ratio. At x = 0.02 both FM and AFM energy scales have similar strength and the system remains paramagnetic down to 2 K with an extremely large Stoner enhancement factor of about 400. Here, spin fluctuations dominate the temperature dependence of the resistivity \rho ~ T ^ 3/2 and of the specific heat C/T ~ - log(T) which deviate from their conventional Fermi liquid forms, inferring the presence of a quantum critical point of dual nature.",1606.09416v1 2016-09-16,Ab initio calculations to support accurate modelling of the rovibronic spectroscopy calculations of vanadium monoxide (VO),"Accurate knowledge of the rovibronic near-infrared and visible spectra of vanadium monoxide (VO) is very important for studies of cool stellar and hot planetary atmospheres. Here, the required ab initio dipole moment and spin-orbit coupling curves for VO are produced. This data forms the basis of a new VO line list considering 13 different electronic states and containing over 277 million transitions. Open shell transition, metal diatomics are challenging species to model through ab initio quantum mechanics due to the large number of low-lying electronic states, significant spin-orbit coupling and strong static and dynamic electron correlation. Multi-reference configuration interaction methodologies using orbitals from a complete active space self-consistent-field (CASSCF) calculation are the standard technique for these systems. We use different state-specific or minimal-state CASSCF orbitals for each electronic state to maximise the calculation accuracy. The off-diagonal dipole moment controls the intensity of electronic transitions. We test finite-field off-diagonal dipole moments, but found that (1) the accuracy of the excitation energies were not sufficient to allow accurate dipole moments to be evaluated and (2) computer time requirements for perpendicular transitions were prohibitive. The best off-diagonal dipole moments are calculated using wavefunctions with different CASSCF orbitals.",1609.05073v1 2017-03-21,"Anomalous Lattice Behavior of Vanadium Pentaoxide (V2O5): X- Ray Diffraction, Inelastic Neutron Scattering and ab-initio Lattice Dynamics","We present the structural and dynamical studies of layered vanadium pentaoxide (V2O5). The temperature dependent X-ray diffraction measurements reveal highly anisotropic and anomalous thermal expansion from 12 K to 853 K. The results do not show any evidence of structural phase transition or decomposition of {\alpha}-V2O5, contrary to the previous transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) experiments. The inelastic neutron scattering measurements performed up to 673 K corroborate the result of our X-ray diffraction measurements. The analysis of the experimental data is carried out using ab-initio lattice dynamics calculation. The important role of van der-Waals dispersion and Hubbard interactions on the structure and dynamics is revealed through the ab-initio calculations. The calculated anisotropic thermal expansion behavior agrees well with temperature dependent X- ray diffraction. The mechanism of anisotropic thermal expansion and anisotropic linear compressibility is discussed in terms of calculated anisotropy in Gr\""uneisen parameters and elastic coefficients. The calculated Gibbs free energy in various phases of V2O5 is used to understand the high pressure and temperature phase diagram of the compound. Softening of elastic constant (C66) with pressure suggests a possibility of shear mechanism for {\alpha} to \b{eta} phase transformation under pressure.",1703.07132v1 2017-05-04,Early Solar System irradiation quantified by linked vanadium and beryllium isotope variations in meteorites,"X-ray emission in young stellar objects (YSOs) is orders of magnitude more intense than in main sequence stars1,2, suggestive of cosmic ray irradiation of surrounding accretion disks. Protoplanetary disk irradiation has been detected around YSOs by HERSCHEL3. In our solar system, short-lived 10Be (half-life = 1.39 My4), which cannot be produced by stellar nucleosynthesis, was discovered in the oldest solar system solids, the calcium-aluminium-rich inclusions (CAIs)5. The high 10Be abundance, as well as detection of other irradiation tracers6,7, suggest 10Be likely originates from cosmic ray irradiation caused by solar flares8. Nevertheless, the nature of these flares (gradual or impulsive), the target (gas or dust), and the duration and location of irradiation remain unknown. Here we use the vanadium isotopic composition, together with initial 10Be abundance to quantify irradiation conditions in the early Solar System9. For the initial 10Be abundances recorded in CAIs, 50V excesses of a few per mil relative to chondrites have been predicted10,11. We report 50V excesses in CAIs up to 4.4 per mil that co-vary with 10Be abundance. Their co-variation dictates that excess 50V and 10Be were synthesised through irradiation of refractory dust. Modelling of the production rate of 50V and 10Be demonstrates that the dust was exposed to solar cosmic rays produced by gradual flares for less than 300 years at about 0.1 au from the protoSun.",1705.01808v1 2017-05-25,Topological Weyl and Node-Line Semimetals in Ferromagnetic Vanadium-Phosphorous-Oxide $β$-V$_2$OPO$_4$ Compound,"We propose that the topological semimetal features can co-exist with ferromagnetic ground state in vanadium-phosphorous-oxide $\beta$-V$_2$OPO$_4$ compound from first-principles calculations. In this magnetic system with inversion symmetry, the direction of magnetization is able to manipulate the symmetric protected band structures from a node-line type to a Weyl one in the presence of spin-orbital-coupling. The node-line semimetal phase is protected by the mirror symmetry with the reflection-invariant plane perpendicular to magnetic order. Within mirror symmetry breaking due to the magnetization along other directions, the gapless node-line loop will degenerate to only one pair of Weyl points protected by the rotational symmetry along the magnetic axis, which are largely separated in momentum space. Such Weyl semimetal phase provides a nice candidate with the minimum number of Weyl points in a condensed matter system. The results of surface band calculations confirm the non-trivial topology of this proposed compound. This findings provide a realistic candidate for the investigation of topological semimetals with time-reversal symmetry breaking, particularly towards the realization of quantum anomalous Hall effect in Weyl semimetals.",1705.09234v1 2017-07-25,Characteristics of superconducting state in vanadium: the Eliashberg equations and semi-analytical formulas,"The superconducting state in vanadium characterizes with the critical temperature ($T_{c}$) equal to $5.3$~K. The Coulomb pseudopotential, calculated with the help of the Eliashberg equations, possesses anomalously high value $\mu^{\star}\left(3\Omega_{\rm max}\right)=0.259$ or $\mu^{\star}\left(10\Omega_{\rm max}\right)=0.368$ ($\Omega_{\rm max}$ denotes the maximum phonon frequency). Despite the relatively large electron-phonon coupling constant ($\lambda=0.91$), the quantities such as: the order parameter ($\Delta$), the specific heat ($C$), and the thermodynamic critical field ($H_{c}$) determine the values of the dimensionless ratios not deviating much from the predictions of the BCS theory: $R_{\Delta}=2\Delta\left(0\right)/ k_{B}T_{c}=3.68$, $R_{C}=\Delta C\left(T_{c}\right)/ C^{N}\left(T_{c}\right)=1.69$, and $R_{H}=T_{c}C^{N}\left(T_{c}\right)/ H^{2}_{c}\left(0\right)=0.171$. This result is associated with the reduction of the strong-coupling and the retardation effects by the high value of the Coulomb pseudopotential. It has been shown that the results of the Eliashberg formalism can be relatively precisely reproduced with the help of the semi-analytical formulas, if the value of $\mu^{\star}$ is determined on the basis of the $T_{c}$-Allen-Dynes expression ($\mu^{\star}_{AD}=0.198$). The attention should be paid to the fact that in the numerical and in the semi-analytical approach the comparable values of the thermodynamic parameters for the same $\mu^{\star}$ have been obtained only in the vicinity of the point $\mu^{\star}=0.1$.",1707.08228v1 2018-03-05,Weak metal-metal transition in the vanadium oxytelluride Rb$_{1-δ}$V$_2$Te$_2$O,"We report the synthesis, crystal structure, physical properties, and first-principles calculations of a vanadium-based oxytelluride Rb$_{1-\delta}$V$_2$Te$_2$O ($\delta\approx0.2$). The crystal structure bears two-dimensional V$_2$O square nets sandwiched with tellurium layers, mimicking the structural motifs of cuprate and iron-based superconductors. The material exhibits metallic conductivity with dominant hole-type charge carriers. A weak metal-to-metal transition takes place at $\sim$100 K, which is conformably characterized by a slight kink/hump in the electrical resistivity, jumps in the Hall and Seebeck coefficients, a minute drop in the magnetic susceptibility, and a small peak in the heat capacity. Neither Bragg-peak splitting nor superlattice reflections can be detected within the resolution of conventional x-ray diffractions. The band-structure calculations show that V-3$d$ orbitals dominate the electronic states at around Fermi energy where a $d_{yz}/d_{xz}$ orbital polarization shows up. There are three Fermi-surface sheets that seem unfavorable for nesting. Our results suggest an orbital or spin-density-wave order for the low-temperature state and, upon suppression of the competing order, emergence of superconductivity could be expected.",1803.01605v2 2018-04-11,Universal renormalization group flow toward perfect Fermi-surface nesting driven by enhanced electron-electron correlations in monolayer vanadium diselenide,"In the present study we examine nature of a charge ordering transition in monolayer vanadium diselenide ($VSe_{2}$), which would be distinguished from that of $VSe_{2}$ bulk samples, driven by more enhanced electron-electron correlations. Recently, angle resolved photoemission spectroscopy measurements uncovered that the Fermi surface nesting becomes perfect, where the dynamics of hot electrons is dispersionless along the orthogonal direction of the nesting wave-vector. In addition, scanning tunneling microscopy measurements confirmed that the resulting CDW state shows essentially the same modulation pattern as the three dimensional system of $VSe_{2}$. Here, we perform the renormalization group analysis based on an effective field theory in terms of critical CDW fluctuations and hot electrons of imperfect Fermi-surface nesting. As a result, we reveal that the imperfect nesting universally flows into perfect nesting in two dimensions, where the Fermi velocity along the orthogonal direction of the nesting vector vanishes generically. We argue that this electronic reconstruction is responsible for the observation that the CDW transition temperature is much more enhanced to be around $T_{c} > 300$ $K$ than that of the bulk sample.",1804.03766v3 2018-05-03,How optical excitation controls the structure and properties of vanadium dioxide,"We combine ultrafast electron diffraction and time-resolved terahertz spectroscopy measurements to unravel the connection between structure and electronic transport properties during the photoinduced insulator-metal transitions in vanadium dioxide. We determine the structure of the metastable monoclinic metal phase, which exhibits anti-ferroelectric charge order arising from a thermally activated, orbital-selective phase transition in the electron system. The relative contribution of this photoinduced monoclinic metal (which has no equilibrium analog) and the photoinduced rutile metal (known from the equilibrium phase diagram) to the time and pump-fluence dependent multi-phase character of the film is established, as is the respective impact of these two distinct phase transitions on the observed changes in terahertz conductivity. Our results represent an important new example of how light can control the properties of strongly correlated materials and elucidate that multi-modal experiements are essential when seeking a detailed connection between ultrafast changes in optical-electronic properties and lattice structure in complex materials.",1805.01430v1 2018-11-19,"Elastic anisotropy and thermal properties of extended linear chain compounds MV$_2$Ga$_4$ (M = Sc, Zr, Hf) from ab-initio calculations","MV$_2$Ga$_4$ (M = Sc, Zr, Hf) compounds belong to an emerging class of materials showing a unique combination of unusual superconducting behavior with extended linear chains in the crystal structure. In order to gain insights {into} its mechanical and thermal properties, we have performed first-principles electronic-structure calculations in the framework of the Density Functional Theory (DFT). From the calculated second-order elastic constants, we have systematically shown that the extended linear vanadium chain substructures indeed give rise to an anisotropic regime in the elastic and mechanical moduli. The high density of valence and conduction electrons along the linear vanadium chains leads to a directional dependence of the reciprocal linear compressibility, Young's modulus and shear modulus. Poisson's ratio for several elongation directions is also drastically affected by the presence of extended V chains. If the elongation is along the V chains, all compounds exhibit {practically} the same Poisson ratio in directions perpendicular to it, further highlighting the importance of the V chains to the mechanical properties. Moreover, based on our results, we have discussed the possible consequences of the elastic anisotropy on the superconducting properties of the compounds. Finally, using the Debye-Gr\""uneisen approximation, our calculations of thermal properties show {a good agreement with the available experimental low temperature heat capacity data above the superconducting critical temperature.",1811.07814v1 2018-11-22,Defect-induced orbital polarization and collapse of orbital order in doped vanadium perovskites,"We explore mechanisms of orbital order decay in doped Mott insulators $R_{1-x}$(Sr,Ca)$_x$VO$_3$ ($R=\,$Pr,Y,La) caused by charged (Sr,Ca) defects. Our unrestricted Hartree-Fock analysis focuses on the combined effect of random, charged impurities and associated doped holes up to $x=0.5$. The study is based on a generalized multi-band Hubbard model for the relevant vanadium $t_{2g}$ electrons, and includes the long-range (i) Coulomb potentials of defects and (ii) electron-electron interactions. We show that the rotation of occupied $t_{2g}$ orbitals, induced by the electric field of defects, is a very efficient perturbation that largely controls the suppression of orbital order in these compounds. We investigate the inverse participation number spectra and find that electron states remain localized on few sites even in the regime where orbital order is collapsed. From the change of kinetic and superexchange energy we can conclude that the motion of doped holes, which is the dominant effect for the reduction of magnetic order in high-$T_c$ compounds, is of secondary importance here.",1811.09009v2 2019-01-08,Optical properties of thin-film vanadium dioxide from the visible to the far infrared,"The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in optics, the optical properties of VO2 across its IMT are scattered throughout the literature, and are not available in some wavelength regions. We characterized the complex refractive index of VO2 thin films across the IMT for free-space wavelengths from 300 nm to 30 {\mu}m, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective-medium theory. We studied VO2 thin films of different thickness, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol gel). While there are differences in the optical properties of VO2 synthesized under different conditions, they are relatively minor compared to the change resulting from the IMT, most notably in the ~2 - 11 {\mu}m range where the insulating phase of VO2 has relatively low optical loss. We found that the macroscopic optical properties of VO2 are much more robust to sample-to-sample variation compared to the electrical properties, making the refractive-index datasets from this article broadly useful for modeling and design of VO2-based optical and optoelectronic components.",1901.02517v1 2019-01-25,"Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study","VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation mapping in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.",1901.08823v1 2019-06-21,Quantum Oscillations of Robust Topological Surface States up to 50 K in Thick Bulk-insulating Topological Insulator,"As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: 1) crystals with different vanadium (V) doping levels are insulating in the 3-300 K region, 2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and 3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.",1906.09953v1 2019-06-25,Unraveling the Mott-Peierls intrigue in Vanadium dioxide,"Vanadium dioxide is one of the most studied strongly correlated materials. Nonetheless, the intertwining between electronic correlation and lattice effects has precluded a comprehensive description of the rutile metal to monoclinic insulator transition, in turn triggering a longstanding ""the chicken or the egg"" debate about which comes first, the Mott localisation or the Peierls distortion. Here, we suggest that this problem is in fact ill-posed: the electronic correlations and the lattice vibrations conspire to stabilise the monoclinic insulator, and so they must be both considered not to miss relevant pieces of the VO$_2$ physics. Specifically, we design a minimal model for VO$_2$ that includes all the important physical ingredients: the electronic correlations, the multi-orbital character, and the two components antiferrodistortive mode that condenses in the monoclinic insulator. We solve this model by dynamical mean-field theory within the adiabatic Born-Oppenheimer approximation. Consistently with the first-order character of the metal-insulator transition, the Born-Oppenheimer potential has a rich landscape, with minima corresponding to the undistorted phase and to the four equivalent distorted ones, and which translates into an equally rich thermodynamics that we uncover by the Monte Carlo method. Remarkably, we find that a distorted metal phase intrudes between the low-temperature distorted insulator and high-temperature undistorted metal, which sheds new light on the debated experimental evidence of a monoclinic metallic phase.",1906.10632v2 2019-08-13,Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale,"Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.",1908.04774v1 2020-04-07,Robustness of superconducting properties to transition metal substitution and impurity phases in Fe1-xVxSe,"We have performed transverse- and zero-field muon spin rotation/relaxation experiments, as well as magnetometry measurements, on samples of Fe1-xVxSe and their Li+NH3 intercalates Li0.6(NH2)0.2(NH3)0.8 Fe1-x Vx Se. We examine the low vanadium substitution regime: x = 0.005, 0.01, and 0.02. The intercalation reaction significantly increases the critical temperature (Tc) and the superfluid stiffness for all x. The nonintercalated samples all exhibit Tc = 8.5 K while the intercalated samples all show an enhanced Tc > 40 K. Vanadium substitution has a negligible effect on Tc, but seems to suppress the superfluid stiffness for the nonintercalated samples and weakly enhance it for the intercalated materials. The optimal substitution level for the intercalated samples is found to be x = 0.01, with Tc = 41 K and {\lambda}_{ab}(0) = 0.18 {\mu}m. The nonintercalated samples can be modeled with either a single d-wave superconducting gap or with an anisotropic gap function based on recent quasiparticle imaging experiments, whereas the intercalates display multigap nodal behavior which can be fitted using s + d- or d + d-wave models. Magnetism, likely from iron impurities, appears after the intercalation reaction and coexists and competes with the superconductivity. However, it appears that the superconductivity is remarkably robust to the impurity phase, providing an avenue to stably improve the superconducting properties of transition metal substituted FeSe.",2004.03625v1 2020-07-14,Temperature Dependence of Reconfigurable Bandstop Filters Using Vanadium Dioxide Switches,"In this letter we report and investigate the temperature dependency of various radio frequency parameters (RF) for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here the insulator to metal (ITM) and metal to insulator transition (MIT) hysteresis of the VO2 thin film influence on the RF characteristics of the filters is analyzed from 25 {\deg}C and 120 {\deg}C in heating and cooling. The resonance frequency and maximum insertion loss (IL) stability and sensitivity with temperature variations are explored. It is noticed that increasing the temperature with 50 {\deg}C from 25 {\deg}C (or decreasing it with 50 {\deg}C from 120 {\deg}C) will result in a less than 1% fractional frequency shift in respect to the off and on resonance frequencies. The sharp DC conductivity levels variations of the VO2 thin film around the transition temperatures translate into sharp effects on the resonance characteristics of the filters. On the contrary, the maximum IL levels are less sensitive to the DC films sharp conductivity changes around the VO2 transition temperature. Last, we see that the RF parameters in heating and cooling at 80 {\deg}C, above (but close to) the DC transition temperatures of VO2 exhibit completely different resonance frequencies. The RF results reported close to the transition temperatures for the VO2 thin films can diverge in heating and cooling, thus of a more insightful understanding of VO2 reconfigurable RF devices has to include temperature dependent measurements at various temperatures below MIT and ITM in the RF ranges too",2007.07152v1 2020-09-02,Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides,"Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they exhibit a smooth S-type characteristic and have a temperature-dependent device resistance characterised by an activation energy of 0.25 eV, consistent with conduction in polycrystalline VO2, while for high-compliance currents they exhibit an abrupt snap-back characteristic and a resistance characterised by an activation energy of 0.025 eV, consistent with conduction in oxygen deficient VOx. In both cases, the temperature dependence of the switching voltage implies that the conductivity change is due to the insulator-metal transition in VO2. From this analysis it is concluded that electroforming at low currents creates a conductive filament comprised largely of polycrystalline VO2, while electroforming at high currents creates a composite structure comprised of VO2 and a conductive halo of oxygen deficient VOx. The effect of electroforming on the NDR mode is then explained with reference to a lumped element model of filamentary conduction that includes the effect of a parallel resistance created by the halo. These results provide new insight into the NDR response of vanadium-oxide-based devices and a basis for designing devices with specific characteristics.",2009.00810v1 2021-01-29,Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics,"Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V)-doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2. Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2-based field-effect transistors have been substantially improved (from ~10-8 to 10-5 A; ~104 to 108), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.",2101.12423v1 2021-01-29,Doping isolated one-dimensional antiferro-magnetic semiconductor Vanadium tetrasulfide ($VS_4$) nanowires with carriers induces half-metallicity,"Quasi one-dimensional (1D) vanadium tetrasulfide ($VS_4$) nanowires (NWs) are synthetic semiconductors which combine with each other through Van der Waals interactions to form bulk phases. However, the properties of these individual nanowires remain unknown. Nevertheless, our calculations of their stability indicate that $VS_4$) NWs can be separated from their bulk structures. Accordingly, we theoretically investigated the geometrical, electronic, and magnetic properties of bulk phase and isolated $VS_4$ NWs. Our results indicate that both bulk phase and isolated $VS_4$ NWs are semiconductors with band gaps of 2.24 and 2.64 eV, respectively, and that they prefer the antiferromagnetic (AFM) ground state based on DFT calculations. These calculations also suggested that isolated $VS_4$ NWs show half-metallic antiferromagnetism upon electron and hole doping because carrier doping splits the spin degeneracy to induce local spin polarisation. As a result, spin polarisation currents in isolated $VS_4$ NWs can be manipulated with locally applied gate voltage. Therefore, these 1D AFM materials have a high potential for advancing both fundamental research and spintronic applications because they are more resistant to magnetic perturbation than their 1D ferromagnetic counterparts.",2101.12658v1 2021-02-16,Nodal superconductivity and superconducting domes in the topological Kagome metal CsV3Sb5,"Recently superconductivity was discovered in the Kagome metal AV3Sb5 (A = K, Rb, and Cs), which has an ideal Kagome lattice of vanadium. These V-based superconductors also host charge density wave (CDW) and topological nontrivial band structure. Here we report the ultralow-temperature thermal conductivity and high pressure resistance measurements on CsV3Sb5 with Tc = 2.5 K, the highest among AV3Sb5. A finite residual linear term of thermal conductivity at zero magnetic field and its rapid increase in fields suggest nodal superconductivity. By applying pressure, the Tc of CsV3Sb5 increases first, then decreases to lower than 0.3 K at 11.4 GPa, showing a clear first superconducting dome peaked around 0.8 GPa. Above 11.4 GPa, superconductivity re-emerges, suggesting a second superconducting dome. Both nodal superconductivity and superconducting domes point to unconventional superconductivity in this V-based superconductor. While our finding of nodal superconductivity puts a strong constrain on the pairing state of the first dome, which should be related to the CDW instability, the superconductivity of the second dome may present another exotic pairing state in this ideal Kagome lattice of vanadium.",2102.08356v2 2021-03-18,Plasmonically enhanced spectrally selective narrowband MWIR and LWIR light detection based on hybrid nanopatterned graphene and phase changing vanadium oxide heterostructure operating close to room temperature,"We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene (NPG) and vanadium dioxide (VO$_2$) which exhibits a large responsivity of $R\sim 10^4$ V/W, a detectivity exceeding $D^*\sim 10^{10}$ J, and a sensitivity in terms of noise-equivalent power $\mathrm{NEP}\sim 100$ fW/$\sqrt{\rm Hz}$ close to room temperature by taking advantage of the phase change of a thin VO$_2$ film. Our proposed photodetector can reach an absorption of nearly 100\% in monolayer graphene due to localized surface plasmons (LSPs) around the patterned circular holes. The geometry of the nanopattern and an electrostatic gate potential can be used to tune the absorption peak in the mid-IR regime between 3 and 12 $\mu$m. After the photon absorption by the NPG sheet and the resulting phase change of VO$_2$ from insulating to metallic phase the applied bias voltage $V_b$ triggers a current through the VO$_2$ sheet, which can be detected electronically in about 1 ms, shorter than the detection times of current VO$_2$ bolometers. Our envisioned mid-IR photodetector reaches detectivities of cryogenically cooled HgCdTe photodetectors and sensitivities larger than VO$_2$ microbolometers while operating close to room temperature.",2103.10311v1 2021-05-04,Role of Sb in the superconducting kagome metal CsV$_3$Sb$_5$ revealed by its anisotropic compression,"Pressure evolution of the superconducting kagome metal CsV$_3$Sb$_5$ is studied with single-crystal x-ray diffraction and density-functional band-structure calculations. A highly anisotropic compression observed up to 5 GPa is ascribed to the fast shrinkage of the Cs-Sb distances and suppression of Cs rattling motion. This prevents Sb displacements required to stabilize the three-dimensional charge-density-wave (CDW) order and elucidates the disappearance of the CDW already at 2 GPa despite only minor changes in the electronic structure of the normal state. At higher pressures, vanadium bands still change only marginally, whereas antimony bands undergo a major reconstruction caused by the gradual formation of the interlayer Sb-Sb bonds. Our results exclude pressure tuning of vanadium kagome bands as the main mechanism for the non-trivial evolution of superconductivity in real-world kagome metals. Concurrently, we establish the central role of Sb atoms in the stabilization of a three-dimensional CDW and Fermi surface reconstruction.",2105.01397v4 2021-05-11,Emergence of new van Hove singularities in the charge density wave state of a topological kagome metal RbV3Sb5,"Quantum materials with layered kagome structures have drawn considerable attention due to their unique lattice geometry, which gives rise to flat bands co-existing with Dirac-like dispersions. The interplay between strong Coulomb correlations and nontrivial band topology in these systems results in various exotic phenomena. Recently, vanadium-based materials with layered kagome structures are discovered to be topological metals, which exhibit charge density wave (CDW) properties, significant anomalous Hall effect, and unusual superconductivity at low temperatures. Here we exploit high-resolution angle-resolved photoemission spectroscopy to investigate the electronic structure evolution induced by the CDW transition in a vanadium-based kagome material RbV3Sb5. A remarkable band renormalization in the CDW state is observed, which is consistent with first principles calculations based on an inverse star-of-David superstructure. The CDW phase transition gives rise to a partial energy gap opening at the Fermi level, a shift in the band dispersion, and most importantly, the emergence of new van Hove singularities associated with large density of states, which are absent in the normal phase and may be related to superconductivity observed at lower temperatures. Our work would shed light on the microscopic mechanisms for the formation of the CDW and superconducting states in these topological kagome metals.",2105.05117v1 2021-06-13,Switchable induced-transmission filters enabled by vanadium dioxide,"Abstract: An induced-transmission filter (ITF) uses an ultrathin layer of metal positioned at an electric-field node within a dielectric thin-film bandpass filter to select one transmission band while suppressing other transmission bands that would have been present without the metal layer. Here, we introduce a switchable mid-infrared ITF where the metal film can be ""switched on and off"", enabling the modulation of the filter response from single-band to multiband. The switching is enabled by a deeply subwavelength film of vanadium dioxide (VO2), which undergoes a reversible insulator-to-metal phase transition. We designed and experimentally demonstrated an ITF that can switch between two states: one broad passband across the long-wave infrared (LWIR, 8 - 12 um) and one narrow passband at ~8.8 um. Our work generalizes the ITF -- previously a niche type of bandpass filter -- into a new class of tunable devices. Furthermore, our unique fabrication process -- which begins with thin-film VO2 on a suspended membrane -- enables the integration of VO2 into any thin-film assembly that is compatible with physical vapor deposition (PVD) processes, and is thus a new platform for realizing tunable thin-film filters.",2106.07093v1 2021-07-01,"An oxygen-rich, tetrahedral surface phase on high-temperature rutile VO$_2$(110)$_\text{T}$ single crystals","Vanadium dioxide undergoes a metal-insulator transition (MIT) from an insulating (monoclinic) to a metallic (tetragonal) phase close to room temperature, which makes it a promising functional material for many applications, e.g. as chemical sensors. Not much is known about its surface and interface properties, although these are critical in many of its applications. This work presents an atomic-scale investigation of the tetragonal rutile VO$_2$(110)$_\text{T}$ single-crystal surface and reports results obtained with scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS), supported by density-functional theory-based (DFT) calculations. The surface reconstructs into an oxygen-rich (2$\times$2) superstructure that coexists with small patches of the underlying, unreconstructed (110)-(1$\times$1) surface. The best structural model for the (2$\times$2) surface termination, conceptually derived from a vanadium pentoxide (001) monolayer, consists of rings of corner-shared tetrahedra. Over a wide range of oxygen chemical potentials this reconstruction is more stable than the unreconstructed (110) surface as well as models proposed in the literature.",2107.00350v1 2021-10-11,Absolute calibration of the latent heat of transition using differential thermal analysis,"We describe a simple and accurate differential thermal analysis set up to measure the latent heat of solid state materials undergoing abrupt phase transitions in the temperature range from 77 K to above room temperature. We report a numerical technique for the absolute calibration of the latent heat of the transition, without the need of a reference sample. The technique is applied to three different samples -- vanadium sesquioxide undergoing the Mott transition, bismuth barium ruthenate undergoing a magnetoelastic transition, and an intermetallic Heusler compound. In each case, the inferred latent heat value agrees with the literature value to within its error margins. To further demonstrate the importance of absolute calibration, we show that the changes in the latent heat of the Mott transition in vanadium sesquioxide (V$_2$O$_3$) stays constant to within 2% even as the depth of supersaturation changes by about 10 K, in non-equilibrium dynamic hysteresis measurements. We also apply this technique for the measurement of the temperature-dependent specific heat.",2110.05046v1 2021-10-18,Superconductivity modulated by structural phase transitions in pressurized vanadium-based kagome metals,"The interplay of superconductivity with electronic and structural instabilities on the kagome lattice provides a fertile ground for the emergence of unusual phenomena. The vanadium-based kagome metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) exhibit superconductivity on an almost ideal kagome lattice, with the superconducting transition temperature $T_{\rm c}$ forming two domes upon pressure-tuning. The first dome arises from the competition between superconductivity and a charge-density-wave, whereas the origin for the second dome remains unclear. Herein, we show that the appearance of the second superconducting dome in KV$_3$Sb$_5$ and RbV$_3$Sb$_5$ is associated with transitions from hexagonal $P6$/$mmm$ to monoclinic $P2$/$m$ structures, evidenced by splitting of structural peaks from synchrotron powder X-ray diffraction experiments and imaginary phonon frequencies in first-principles calculations. In KV$_3$Sb$_5$, transition to an orthorhombic $Pmmm$ structure is further observed for pressure $p\gtrsim20$ GPa, and is correlated with the strong suppression of $T_{\rm c}$ in the second superconducting dome. Our findings indicate distortions of the crystal structure modulates superconductivity in $A$V$_3$Sb$_5$ under pressure, providing a platform to study the emergence of superconductivity in the presence of multiple structural instabilities.",2110.09056v1 2022-01-11,Recent advance in phase transition of vanadium oxide based solar reflectors and the fabrication progress,"Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR radiation reflectivity, while at the lower temperature the monoclinic structure VO2 acts as the transparent material and increase the transmission radiation. In this paper, we first present the metal-insulator phase transition (MIT) of the VO2 in high and low temperatures. Then we simulate the meta-surface VO2 of metamaterial reflector by Ansys HFSS to show the emittance tunability of the rutile and monoclinic phase of the VO2. In next section, we will review the recent progress in the deposition of thermochromic VO2 on glass and silicon substrate with modifying the pressure of sputtering gases and temperature of the substrate. Finally, we present the results of the in-situ sputtered VOx thin film on thick SiO2 substrate in different combination of oxygen and argon environment by V2O5 target at temperature higher than 300C and then, analyze it with x-ray diffraction (XRD) method. The thermochromic VO2 based metamaterial structures open a new route to the passive energy-efficient optical solar reflector in the past few years.",2201.03722v2 2022-03-03,Enhanced physics-constrained deep neural networks for modeling vanadium redox flow battery,"Numerical modeling and simulation have become indispensable tools for advancing a comprehensive understanding of the underlying mechanisms and cost-effective process optimization and control of flow batteries. In this study, we propose an enhanced version of the physics-constrained deep neural network (PCDNN) approach [1] to provide high-accuracy voltage predictions in the vanadium redox flow batteries (VRFBs). The purpose of the PCDNN approach is to enforce the physics-based zero-dimensional (0D) VRFB model in a neural network to assure model generalization for various battery operation conditions. Limited by the simplifications of the 0D model, the PCDNN cannot capture sharp voltage changes in the extreme SOC regions. To improve the accuracy of voltage prediction at extreme ranges, we introduce a second (enhanced) DNN to mitigate the prediction errors carried from the 0D model itself and call the resulting approach enhanced PCDNN (ePCDNN). By comparing the model prediction with experimental data, we demonstrate that the ePCDNN approach can accurately capture the voltage response throughout the charge--discharge cycle, including the tail region of the voltage discharge curve. Compared to the standard PCDNN, the prediction accuracy of the ePCDNN is significantly improved. The loss function for training the ePCDNN is designed to be flexible by adjusting the weights of the physics-constrained DNN and the enhanced DNN. This allows the ePCDNN framework to be transferable to battery systems with variable physical model fidelity.",2203.01985v1 2022-05-25,Hidden magnetic order on a kagome lattice for KV3Sb5,"KV3Sb5 has recently attracted a considerable attention, due to its low temperature superconducting properties, which are heralded by a charge density wave. The apparent presence of a very weak magnetism does not result in long range ordering. We propose a model compatible with a detectable internal magnetic field with no evidence of magnetic long-range order. It invokes higher order terms in the vanadium magnetization density compatible with the presence of a ""hidden order"" of Dirac (polar) multipoles. The Dirac dipole, known as an anapole or toroidal dipole, is one of a family of electronic multipoles visible in x-ray and magnetic neutron diffraction while undetectable with standard laboratory-based techniques. Two plausible hidden orders are studied with a view to testing in future x-ray and neutron Bragg diffraction experiments whether they are trustworthy. One candidate is magneto-electric and restricted to the linear type, while the other candidate cannot show a magneto-electric effect of any type. The latter hosts a vanadium entity that is both a true scalar and magnetic, and its presence epitomizes an absence of loop currents. Diffraction patterns for the two proposed hidden magnetic orders are distinctly different, fortunately. Corresponding scattering amplitudes for resonant x-ray and neutron Bragg diffraction are calculated with standard chemical and magnetic symmetry tools, and atomic physics.",2205.12657v1 2022-06-06,"Anisotropic magnetic property of single crystals $R$V$_6$Sn$_6$ ($R$ = Y, Gd - Tm, Lu)","$R$V${_6}$Sn${_6}$ ($R$ = Y, Gd - Tm, Lu) single crystals are synthesized by Sn-flux method and their physical properties are characterized by magnetization, resistivity, and specific heat measurements. Powder X-ray diffraction patterns of all samples can be well indexed with the hexagonal HfFe$_6$Ge$_6$-type structure, where rare-earth atoms form hexagonal layers and vanadium atoms form Kagome layers. At high temperatures, magnetic susceptibility measurements of moment bearing rare-earths ($R$ = Gd - Tm) follow Curie-Weiss behavior. Effective moments estimated from the polycrystalline average of magnetic susceptibility curves are consistent with the values for free $R^{3+}$ ion. Strong magnetic anisotropy due to crystalline electric field effects is observed for moment bearing rare-earths, except GdV$_6$Sn$_6$. The easy magnetization direction is determined to be $c$-axis for $R$ = Tb - Ho and $ab$-plane for $R$ = Er, and Tm. The vanadium ions in $R$V${_6}$Sn${_6}$ possess no magnetic moment. The compounds for $R$ = Y and Lu exhibit typical characteristics of paramagnetic metals. At low temperatures, the magnetic ordering is confirmed from magnetization, specific heat, and resistivity: the highest $T_{N} = 4.9$~K for GdV$_6$Sn$_6$ and the lowest $T_{N} = 2.3$~K for HoV$_6$Sn$_6$. No magnetic ordering is observed down to 1.8~K for $R$ = Er and Tm. A slight deviation of the magnetic ordering temperature from the de Gennes scaling suggests the dominant Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction between rare-earth moments in metallic $R$V${_6}$Sn${_6}$ compounds.",2206.02924v1 2022-06-23,Complementary Vanadium Dioxide Metamaterials with Enhanced Modulation Amplitude at Terahertz Frequencies,"One route to create tunable metamaterials is through integration with ""on-demand"" dynamic quantum materials, such as vanadium dioxide (VO2). This enables new modalities to create high performance devices for historically challenging applications. Indeed, dynamic materials have often been integrated with metamaterials to imbue artificial structures with some degree of tunability. Conversely, metamaterials can be used to enhance and extend the natural tuning range of dynamic materials. Utilizing a complementary split ring resonator array deposited on a VO2 film, we demonstrate enhanced terahertz transmission modulation upon traversing the insulator-to-metal transition (IMT) at ~340 K. Our complementary metamaterial increases the modulation amplitude of the original VO2 film from 42% to 68.3% at 0.47 THz upon crossing the IMT, corresponding to an enhancement of 62.4%. Moreover, temperature dependent transmission measurements reveal a redshift of the resonant frequency arising from a giant increase of the permittivity of the VO2 film. Maxwell-Garnett effective medium theory was employed to explain the permittivity change upon transitioning through the IMT. Our results highlight that symbiotic integration of metamaterial arrays with quantum materials provides a powerful approach to engineer emergent functionality.",2206.11930v1 2022-06-24,Transition from Pauli paramagnetism to Curie-Weiss behaviour in vanadium,"We study electron correlations and their impact on magnetic properties of bcc vanadium by a combination of density functional and dynamical mean-field theory. The calculated uniform magnetic susceptibility {in bcc structure} is of Pauli type at low temperatures, while it obeys the Curie-Weiss law at higher temperatures. Thus, we qualitatively reproduce the experimental temperature dependence of magnetic susceptibility without introducing the martensitic phase transition. Our results for local spin-spin correlation function and local susceptibility reveal that the Curie-Weiss behavior appears due to partial formation of local magnetic moments, which originate from $t_{2g}$ states and occur due to local spin correlations caused by Hund's rule coupling. At the same time, the fermionic quasiparticles remain well-defined, while the formation of local moments is accompanied by a deviation from the Fermi-liquid behavior. In particular, the self-energy of the $t_{2g}$ states shows the non-analytic frequency dependence, which is a characteristic of the spin-freezing behavior, while the quasiparticle damping changes approximately linearly with temperature in the intermediate temperature range $200$--$700$~K. By analyzing the momentum dependence of static magnetic susceptibility, we find incommensurate magnetic correlations, which may provide a mechanism for unconventional superconductivity at low temperatures.",2206.12383v3 2022-07-28,Evolution of short-range magnetic correlations in ferromagnetic Ni-V alloys,"We experimentally study how the magnetic correlations develop in a binary alloy close to the ferromagnetic quantum critical point with small-angle neutron scattering (SANS). Upon alloying the itinerant ferromagnet nickel with vanadium, the ferromagnetic order is continuously suppressed. The critical temperature Tc vanishes when vanadium concentrations reach the critical value of xc=0.116 indicating a quantum critical point separating the ferromagnetic and paramagnetic phases. Earlier magnetization and $\mu$SR data have indicated the presence of magnetic inhomogeneities in Ni(1-x)V(x) and, in particular, recognize the magnetic clusters close to xc, on the paramagnetic and on the ferromagnetic sides with nontrivial dynamical properties [R. Wang et al., Phys. Rev. Lett. 118, 267202 (2017)]. We present the results of SANS study with full polarization analysis of polycrystalline Ni(1-x)V(x) samples with x=0.10 and x=0.11 with low critical temperatures Tc below 50 K. For both Ni-V samples close to xc we find isotropic magnetic short-range correlations in the nanometer-scale persisting at low temperatures. They are suppressed gradually in higher magnetic fields. In addition, signatures of long-range ordered magnetic domains are present below Tc. The fraction of these magnetic clusters embedded in the ferromagnetic ordered phase grows towards xc and agrees well with the cluster fraction estimate from the magnetization and $\mu$SR data. Our SANS studies provide new insights into the nature of the inhomogeneities in a ferromagnetic alloy close to a quantum critical point.",2207.14196v2 2022-09-01,Towards Morphologically Induced Anisotropy in Thermally Hysteretic Dielectric Properties of Vanadium Dioxide,"The Bruggeman homogenization formalism was used to numerically investigate the dielectric properties of a columnar thin film (CTF) made from vanadium dioxide. For visible and near-infrared wavelengths, the CTF is electromagnetically equivalent to a homogeneous orthorhombic material. Over the 58 deg C -- 72 deg C temperature range, the eigenvalues of the CTF's relative permittivity dyadic are highly sensitive to temperature, and vary according to whether the CTF is being heated or cooled. The anisotropy revealed through the eigenvalues, and the anisotropy of the associated hysteresis, were investigated in relation to temperature for CTFs of different porosities and columnar cross sections. When the free-space wavelength is 800 nm, the CTF is a dissipative dielectric material that exhibits temperature-dependent anisotropy and anisotropic hysteresis. In contrast, when the free-space wavelength is 1550 nm, the CTF can be either a dissipative dielectric material, a hyperbolic material or a metal-like material, depending on the temperature and the porosity of the CTF. As the porosity of the CTF decreases from 0.55 to 0.3, the anisotropy of the CTF becomes more pronounced, as does the anisotropy of the hysteresis. Only relatively modest variations in anisotropy and hysteresis arise in response to varying the columnar cross-sectional shape, as compared to the variations induced by varying the porosity.",2209.00492v1 2022-09-20,Optical Characterization of a Single Quantum Emitter Based on Vanadium Phthalocyanine Molecules,"Single quantum emitters play a fundamental role in the development of quantum technologies such as quantum repeaters, and quantum information processing. Isolating individual molecules with stable optical emission is an essential step for these applications, specially for those molecules that present large coherence times at room temperature. Among them, vanadium-oxide phthalocyanine (VOPc) molecules stand out as promising candidates due to their large coherence times measured in ensemble. However, the optical properties of individual molecules have not yet been reported. Here we show that single VOPc molecules with stable optical properties at room temperature can be isolated. We find that the optical response of the molecule under laser illumination of different polarization agrees well with a system having pyramidal C$_{4v}$ symmetry. Furthermore, the molecule reveals a non-radiative transition rate that depends on the excitation wavelength when its lifetime is interrogated. We provide theoretical calculations that support our experimental findings and provide insight to the role of phonons and internal electronic structure of the molecule. These results demonstrate that this single paramagnetic molecule can function as a single quantum emitter while displaying optical stability under ambient conditions to have their intrinsic properties investigated.",2209.09842v1 2022-09-21,Classical and Machine Learning Interatomic Potentials for BCC Vanadium,"BCC transition metals (TMs) exhibit complex temperature and strain-rate dependent plastic deformation behaviour controlled by individual crystal lattice defects. Classical empirical and semi-empirical interatomic potentials have limited capability in modelling defect properties such as the screw dislocation core structures and Peierls barriers in the BCC structure. Machine learning (ML) potentials, trained on DFT-based datasets, have shown some successes in reproducing dislocation core properties. However, in group VB TMs, the most widely-used DFT functionals produce erroneous shear moduli C44 which are undesirably transferred to machine-learning interatomic potentials, leaving current ML approaches unsuitable for this important class of metals and alloys. Here, we develop two interatomic potentials for BCC vanadium (V) based on (i) an extension of the partial electron density and screening parameter in the classical semi-empirical modified embedded-atom method (XMEAM-V) and (ii) a recent hybrid descriptor in the ML Deep Potential framework (DP-HYB-V). We describe distinct features in these two disparate approaches, including their dataset generation, training procedure, weakness and strength in modelling lattice and defect properties in BCC V. Both XMEAM-V and DP-HYB-V reproduce a broad range of defect properties relevant to plastic deformation and fracture. In particular, XMEAM-V reproduces nearly all mechanical and thermodynamic properties at DFT accuracies and with C44 near experimental value. XMEAM-V also naturally exhibits the anomalous slip at 77 K widely observed in group VB and VIB TMs and outperforms all existing, publically available interatomic potentials for V. The XMEAM thus provides a practical path to developing accurate and efficient interatomic potentials for nonmagnetic BCC TMs and possibly multi-principal element TM alloys.",2209.12322v1 2022-09-29,Site-specific atomic substitution in a giant magnetocaloric Fe$_2$P-type system,"Giant magnetocaloric (GMC) materials constitute a requirement for near room temperature magnetic refrigeration. (Fe,Mn)$_2$(P,Si) is a GMC compound with strong magnetoelastic coupling. The main hindrance towards application of this material is a comparably large temperature hysteresis, which can be reduced by metal site substitution with a nonmagnetic element. However, the (Fe,Mn)$_2$(P,Si) compound has two equally populated metal sites, the tetrahedrally coordinated $3f$ and the pyramidally coordinated $3g$ sites. The magnetic and magnetocaloric properties of such compounds are highly sensitive to the site specific occupancy of the magnetic atoms. Here we have attempted to study separately the effect of $3f$ and $3g$ site substitution with equal amounts of vanadium. Using formation energy calculations, the site preference of vanadium and its influence on the magnetic phase formation are described. A large difference in the isothermal entropy change (as high as 44\%) with substitution in the $3f$ and $3g$ sites is observed. The role of the lattice parameter change with temperature and the strength of the magnetoelastic coupling on the magnetic properties are highlighted.",2209.14962v1 2022-11-26,Investigating the effect of electronic correlation on transport properties and phononic states of Vanadium,"In the present work, we have tried to investigate the importance of electronic correlation on transport properties and phononic states of Vanadium (V). The temperature-dependent electrical resistivity ($\rho$) and electronic part of thermal conductivity ($\kappa_e$) due to electron-electron interactions (EEIs) and electron-phonon interactions (EPIs) are computed. The values of $\rho$ due to EEIs are found to be extremely small in comparison to $\rho$ due to EPIs. For instance, at 300 K, the calculated value of $\rho$ due to EEIs (EPIs) is $\sim$ 0.859$\times10^{-3}$ ($\sim$ 0.20) $\mu\Omega$m. The magnitudes of $\kappa_e$ due to EPIs are found to be in good agreement with the experimental results. These observations indicate the negligible importance of EEIs to these quantities for V. However, at 300 K, the value of Seebeck coefficient ($S$) at DFT+DMFT level ($\sim$ -0.547 $\mu$VK$^{-1}$) is found to be entirely different than at DFT level ($\sim 7.401$ $\mu$VK$^{-1}$). Also, the DFT+DMFT value of $S$ at 300 K is in good match with the available experimental data (-1.06 $\mu$VK$^{-1}$, 1.0 $\mu$VK$^{-1}$). Apart from this, the study of phononic states at DFT and DFT+DMFT level is performed. The obtained phononic band structure and phonon DOS at DFT+DMFT differ to a good extent from that at DFT. The maximum energy of phononic state obtained at DFT (DFT+DMFT) is $\sim$ 33.83 ($\sim$ 35.15) meV, where the result of DFT+DMFT is obtained more closer to the experimental data (35.15, 36.98 & 41.77 meV). These results highlight the importance of electronic correlation on $S$ & phononic states of simple correlated V metal.",2211.14504v2 2023-01-06,Economic and Energetic Assessment of a Hybrid Vanadium Redox Flow and Lithium-ion batteries considering Power Sharing Strategies Impact,"Hybrid energy storage systems (HESS) combine different energy storage technologies aiming at overall system performance and lifetime improvement compared to a single technology system. In this work, control combinations for a vanadium redox flow battery (VRFB, 5/60 kW/kWh) and a lithium-ion battery (LIB, 3.3/9.8 kW/kWh) are investigated for the design of a HESS. Four real-time energy management/power allocation scenarios are considered for the operation of the hybrid storage solution through a 15-year economic and energetic analysis. The results obtained for each scenario are compared with a single technology battery performance. In the definition of the scenarios, real electricity generation is considered from two solar photovoltaic installations (3.2 kWp and 6.7 kWp) and an estimated representative load of a services building. HESS performance is evaluated through specific energy and economic key performance indicators. The results obtained indicate that the use of customized energy management strategies (EMSs) renders the VRFB and LIB characteristics complementary, besides enhancing the competitiveness of VRFB, as a single technology. Moreover, the HESS management impacts the seasonality factor, contributing to the overall electric system smart management.",2301.02535v3 2023-01-07,Modulation-Doping a Correlated Electron Insulator,"Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.",2301.02798v1 2023-05-02,Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide,"Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.",2305.01757v2 2023-08-23,"Plastic deformation mechanisms during nanoindentation of W, Mo, V body-centered cubic single crystals and their corresponding W-Mo, W-V equiatomic random solid solutions","Deformation plasticity mechanisms in alloys and compounds may unveil the material capacity towards optimal mechanical properties. We conduct a series of molecular dynamics (MD) simulations to investigate plasticity mechanisms due to nanoindentation in pure tungsten, molybdenum and vanadium body-centered cubic single crystals, as well as the also body-centered cubic, equiatomic, random solid solutions (RSS) of tungsten--molybdenum and tungsten--vanadium alloys. Our analysis focuses on a thorough, side-by-side comparison of dynamic deformation processes, defect nucleation, and evolution, along with corresponding stress--strain curves. We also check the surface morphology of indented samples through atomic shear strain mapping. As expected, the presence of Mo and V atoms in W matrices introduces lattice strain and distortion, increasing material resistance to deformation and slowing down dislocation mobility of dislocation loops with a Burgers vector of 1/2 $\langle 111 \rangle$. Our side-by-side comparison displays a remarkable suppression of the plastic zone size in equiatomic W--V RSS, but not in equiatomic W--Mo RSS alloys, displaying a clear prediction for optimal hardening response equiatomic W--V RSS alloys. If the small-depth nanoindentation plastic response is indicative of overall mechanical performance, it is possible to conceive a novel MD-based pathway towards material design for mechanical applications in complex, multi-component alloys.",2308.12206v1 2023-09-15,Ab initio investigation of the lattice dynamics and thermophysical properties of BCC Vanadium and Niobium,"In the present work, we have performed the phonon dispersion calculations of body-centered cubic Vanadium (V) and Niobium (Nb) with the supercell approach using different supercell size. Using DFT method, the calculated phonon spectra of V and Nb are found to be in a good agreement with the available experimental data. Our calculated results show a \enquote{dip}-like feature in the longitudinal acoustic phonon mode along the $\Gamma$-H high symmetric path for both transition metals in the case of supercell size 4$\times$4$\times$4. However, in supercell size 2$\times$2$\times$2 and 3$\times$3$\times$3, the \enquote{dip}-like feature is not clearly visible. In addition to this, thermodynamical properties are also computed, which compare well with the experimental data. Apart from this, the phonon lifetime due to electron-phonon interactions ($\tau_{\rm{eph}}^{\rm{ph}}$) and phonon-phonon interactions ($\tau_{\rm{ph}}^{\rm{ph}}$) are calculated. The effect of phonon-phonon interactions (PPI) is studied by computing the average phonon lifetime for all acoustic branches. The value of $\tau_{\rm{eph}}^{\rm{ph}}$ of V (Nb) is found to be 23.16 (24.70)$\times 10^{-15}$ s at $100$ K, which gets decreased to 1.51 (1.85)$\times 10^{-15}$ s at 1000 K. The $\tau_{\rm{ph}}^{\rm{ph}}$ of V (Nb) is found to be 8.59 (18.09)$\times 10^{-12}$ and 0.83 (1.76)$\times 10^{-12}$ s at 100 and 1000 K, respectively. Nextly, the lattice thermal conductivity is computed using linearized phonon Boltzmann equation. The present work suggests that studying the variation of phonon dispersion with supercell size is crucial for understanding the phonon properties of solids accurately.",2309.08245v1 2023-10-13,Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM,"There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors, including the intrinsic properties of the host material, the nature of the dopants used, their spatial distribution as well as their interactions with other types of defects. A thorough atomic-level analysis is essential to fully understand these mechanisms. In this work, vanadium doped WSe$_2$ monolayer grown by molecular beam epitaxy is investigated using four-dimensional scanning transmission electron microscopy (4D-STEM). Through center of mass-based reconstruction, atomic scale maps are produced, allowing the visualization of both the electric field and the electrostatic potential around individual V atoms. To provide quantitative insights, these results are successfully compared with multislice image simulations based on ab initio calculations, accounting for lens aberrations. Finally, a negative charge around the V dopants is detected as a drop in the electrostatic potential, unambiguously demonstrating that 4D-STEM can be used to detect and to accurately analyze single dopant charge states in semiconducting 2D materials.",2310.09246v1 2023-12-01,Active Loss Engineering in Vanadium Dioxide Based BIC Metasurfaces,"Metasurfaces have unlocked significant advancements across photonics, yet their efficient active control remains challenging. The active materials required often lack continuous tunability, exhibit inadequate refractive index (RI) changes, or suffer from high losses. These aspects pose an inherent limitation for resonance-shifting based switching: when RI changes are small, the resulting shift is also minor. Conversely, high RI changes typically come with high intrinsic losses necessitating broad modes because narrow ones cannot tolerate such losses. Therefore, larger spectral shifts are required to effectively detune the modes. This paper introduces a novel active metasurface approach that converts the constraint of high intrinsic losses into a beneficial feature. This is achieved by controlling the losses in a hybrid vanadium dioxide (VO$_{2}$) - silicon metasurface, supporting symmetry-protected bound states in the continuum (BICs) within the infrared spectrum. By leveraging the temperature-controlled losses in VO$_{2}$ and combining them with the inherent far-field-coupling tunability of BICs, we gain unprecedented precision in independently controlling both the radiative and nonradiative losses of the resonant system. Our dual-control mechanism allows us to optimize our metasurfaces and we experimentally demonstrate quality factors above 200, a maximum reflectance amplitude of 90%, a relative switching contrast of 78%, and continuous tuning from under- to over-coupling within the infrared spectral range. This study provides a foundation for experimentally and technologically simple, fine-tunable, active metasurfaces for applications ranging from molecular sensors to filters and optical modulators.",2312.00547v1 2024-02-14,Switchable optical trapping based on Mie-resonant phase-change nanoparticles,"Optical tweezers have revolutionized the manipulation of nanoscale objects, offering versatile control over trapped particles. Typically, the manipulation and trapping capabilities of optical tweezers rely on adjusting either the trapping laser beams or the optical environment surrounding the trapped nanoparticles. In our study, we present a novel approach to achieve tunable and switchable trapping using optical tweezers. We utilize nanoparticles made of a phase-change material (vanadium dioxide or VO$_2$), trapped by a focused Gaussian beam. By varying the intensity of the trapping beam, we can optically control the phase and optomechanical properties of the vanadium dioxide nanoparticles. At lower intensities, the nanoparticle remains in its monoclinic phase, and it is trapped by attractive optical forces. However, at higher intensities, the optical beam induces a phase transition in the nanoparticle to the rutile phase, which dramatically alters the optical forces, transforming them from attractive to repulsive, thereby pushing the nanoparticle away from the beam. Importantly, this effect is reversible, allowing the same particle to be attracted and repelled repeatedly. The observed phenomenon is governed by Mie resonances supported by the nanoparticle and their alterations during the phase transition of the VO$_2$ material. Our findings introduce a versatile new addition to the optical tweezers toolbox for optomechanical manipulation of nanoparticles.",2402.08947v1 2016-06-14,On the multiferroic skyrmion-host GaV4S8,"The lacunar spinel GaV4S8 exhibits orbital ordering at 44 K and shows a complex magnetic phase diagram below 12.7 K, which includes ferromagnetic and cycloidal spin order. At low but finite external magnetic fields, N\'eel-type skyrmions are formed in this material. Skyrmions are whirl-like spin vortices that have received great theoretical interest because of their non-trivial spin topology and that are also considered as basic entities for new data-storage technologies. Interestingly, we found that the orbitally ordered phase shows sizable ferroelectric polarization and that excess spin-driven polarizations appear in all magnetic phases, including the skyrmion-lattice phase. Hence, GaV4S8 shows simultaneous magnetic and polar order and belongs to the class of multiferroics, materials that attracted enormous attention in recent years. Here, we summarize the existing experimental information on the magnetic, electronic, and dielectric properties of GaV4S8. By performing detailed magnetic susceptibility, resistivity, specific heat, and dielectric experiments, we complement the low-temperature phase diagram. Specifically, we show that the low-temperature and low-field ground state of GaV4S8 seems to have a more complex spin configuration than purely collinear ferromagnetic spin order. In addition, at the structural Jahn-Teller transition the magnetic exchange interaction changes from antiferromagnetic to ferromagnetic. We also provide experimental evidence that the vanadium V4 clusters in GaV4S8 can be regarded as molecular units with spin 1/2. However, at high temperatures deviations in the susceptibility show up, indicating that either the magnetic moments of the vanadium atoms fluctuate independently or excited states of the V4 molecule become relevant.",1606.04511v1 2019-05-23,Reconfigurable radiofrequency electronic functions designed with 3D Smith Charts in Metal-Insulator-Transition Materials,"Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, teraherz and optoelectronic devices. Designing radiofrequency (RF) electronic circuits with a MIT material like vanadium dioxide, VO2, requires the understanding of its physics and appropriate models and tools, with predictive capability over large range of frequency (1-100GHz). Here, we develop 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting by the use of MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a 3D multi-parameter modelling and design environment for the complex case of Metal-Insulator-Transition (MIT) materials where their permittivity is dependent on the frequency. In this work, we apply 3D Smith charts to on Vanadium Dioxide (VO2) reconfigurable Peano inductors. We report fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz. Finally, we fabricate new Peano curves filters used to extract the frequency-dependent dielectric constant of VO2 within 1 GHz-50 GHz for the accurate design of RF electronic applications with phase change materials",1905.09701v1 2020-01-07,Electrical switching and oscillations in vanadium dioxide,"We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10*10 nm, Fmax can reach the value of 300 MHz at a film thickness of ~20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts ~13 {\mu}s, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns ~ 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 {\mu}m for structures with characteristic dimensions of 0.1 to 5 {\mu}m, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.",2001.01913v1 2020-03-24,Canted antiferromagnetic order in the monoaxial chiral magnets V$_{1/3}$TaS$_2$ and V$_{1/3}$NbS$_{2}$,"The Dzyaloshinskii-Moriya (DM) interaction is present in the transition metal dichalcogenides (TMDC) magnets of form $M_{1/3}T$S$_{2}$ ($M$ $=$ 3d transition metal, $T$ $\in$ {Nb, Ta}), given that the intercalants $M$ form $\sqrt{3}\times\sqrt{3}$ superlattices within the structure of the parent materials $T$S$_2$ and break the centrosymmetry. Competition between the DM and ferromagnetic exchange interactions in these systems has been shown to stabilize a topological defect known as a chiral soliton in select intercalated TMDCs, initiating interest both in terms of fundamental physics and the potential for technological applications. In the current article, we report on our study of the materials V$_{1/3}$TaS$_2$ and V$_{1/3}$NbS$_2$, using a combination of x-ray powder diffraction, magnetization and single crystal neutron diffraction. Historically identified as ferromagnets, our diffraction results instead reveal that vanadium spins in these compounds are arranged into an A-type antiferromagnetic configuration at low temperatures. Refined moments are 1.37(6)$\mu_{B}$ and 1.50(9)$\mu_{B}$ for V$_{1/3}$TaS$_2$ and V$_{1/3}$NbS$_2$, respectively. Transition temperatures $T_{c}$~$=$~32K for V$_{1/3}$TaS$_{2}$ and 50K for V$_{1/3}$NbS$_{2}$ are obtained from the magnetization and neutron diffraction results. We attribute the small net magnetization observed in the low-temperature phases to a subtle ($\sim$2$^{\circ}$) canting of XY-spins in the out-of-plane direction. These new results are indicative of dominant antiferromagnetic exchange interactions between the vanadium moments in adjacent ab-planes, likely eliminating the possibility of identifying stable chiral solitons in the current materials.",2003.10967v4 2021-03-16,Roton pair density wave and unconventional strong-coupling superconductivity in a topological kagome metal,"The transition-metal kagome lattice materials host frustrated, correlated, and topological quantum states of matter. Recently, a new family of vanadium-based kagome metals AV3Sb5 (A=K, Rb, and Cs) with topological band structures has been discovered. These layered compounds are nonmagnetic and undergo charge density wave transitions before developing superconductivity at low temperatures. Here we report the observation of unconventional superconductivity and pair density wave (PDW) in CsV3Sb5 using scanning tunneling microscope/spectroscopy (STM/STS) and Josephson STS. We find that CsV3Sb5 exhibits a V-shaped pairing gap {\Delta}~0.5 meV and is a strong-coupling superconductor (2{\Delta}/kBTc~5) that coexists with 4a0 unidirectional and 2a0X2a0 charge order. Remarkably, we discover a 3Q PDW accompanied by bidirectional 4a0/3 spatial modulations of the superconducting gap, coherence peak and gap-depth in the tunneling conductance. We term this novel quantum state a roton-PDW associated with an underlying vortex-antivortex lattice that can account for the observed conductance modulations. Probing the electronic states in the vortex halo in an applied magnetic field, in strong-field that suppresses superconductivity, and in zero-field above Tc reveals that the PDW is a primary state responsible for an emergent pseudogap and intertwined electronic order. Our findings show striking analogies and distinctions to the phenomenology of high-Tc cuprate superconductors, and provide groundwork for understanding the microscopic origin of correlated electronic states and superconductivity in vanadium-based kagome metals.",2103.09188v2 2021-03-25,Thermodynamic Analysis of Titanium Removal from Molten iron Smelted with Large Amounts of Sodium Additives,"High purity iron is obtained from vanadium-titanium magnetite (VTM) by one-step coal-based direct reduction-smelting process with coal as reductant and sodium carbonate (Na2CO3) as additives. Industrial experiments show that the process of treating molten iron with a large amount of Na2CO3 is effective in removing titanium from molten iron. However, the studies are rarely conducted in thermodynamic relationship between titanium and other components of molten iron, under the condition of a large amount of Na2CO3 additives. In this study, through the thermodynamic database software Factsage8.0, the effects of melting temperature, sodium content and oxygen content on the removal of titanium from molten iron are studied. The results of thermodynamic calculation show that the removal of titanium from molten iron needs to be under the condition of oxidation, and the temperature should be below the critical temperature of titanium removal (the highest temperature at which titanium can be removed). Relatively low temperature and high oxygen content contribute to the removal of titanium from molten iron. The high oxygen content is conducive to the simultaneous removal of titanium and phosphorus from molten iron. In addition, from a thermodynamic point of view, excessive sodium addition inhibits the removal of titanium from molten iron.",2103.13572v1 2021-04-19,Orbital ordering and fluctuations in a kagome superconductor CsV3Sb5,"Recently, competing electronic instabilities, including superconductivity and density-wave-like order, have been discovered in vanadium-based kagome metals AV3Sb5 (A = K, Rb, Cs) with a nontrivial band topology. This finding stimulates wide interests to study the interplay of these competing electronic orders and possible exotic excitations in the superconducting state. Here, in order to further clarify the nature of density-wave-like transition in these kagome superconductors, we performed 51V and 133Cs nuclear magnetic resonance (NMR) measurements on the CsV3Sb5 single crystal. A first-order phase transition associated with orbital ordering is revealed by observing a sudden splitting of orbital shift in 51V NMR spectrum at the structural transition temperature Ts ~ 94 K. In contrast, the quadrupole splitting from a charge-density-wave (CDW) order on 51V NMR spectrum only appears gradually below Ts with a typical second-order transition behavior, suggesting that the CDW order is a secondary electronic order. Moreover, combined with 133Cs NMR spectrum, the present result also confirms a three-dimensional structural modulation with a 2ax2ax2c period. Above Ts, the temperature-dependent Knight shift and nuclear spin-lattice relaxation rate (1/T1) further indicate the existence of remarkable magnetic fluctuations from vanadium 3d orbitals, which are suppressed due to orbital ordering below Ts. The present results strongly support that, besides CDW order, the previously claimed density-wave-like transition also involves a dominant orbital order, suggesting a rich orbital physics in these kagome superconductors.",2104.09173v1 2021-11-24,Titanium oxide and chemical inhomogeneity in the atmosphere of the exoplanet WASP-189b,"The temperature of an atmosphere decreases with increasing altitude, unless a shortwave absorber exists that causes a temperature inversion. Ozone plays this role in the Earth`s atmosphere. In the atmospheres of highly irradiated exoplanets, shortwave absorbers are predicted to be titanium oxide (TiO) and vanadium oxide (VO). Detections of TiO and VO have been claimed using both low and high spectral resolution observations, but later observations have failed to confirm these claims or overturned them. Here we report the unambiguous detection of TiO in the ultra-hot Jupiter WASP-189b using high-resolution transmission spectroscopy. This detection is based on applying the cross-correlation technique to many spectral lines of TiO from 460 to 690 nm. Moreover, we report detections of metals, including neutral and singly ionised iron and titanium, as well as chromium, magnesium, vanadium and manganese (Fe, Fe+, Ti, Ti+, Cr, Mg, V, Mn). The line positions of the detected species differ, which we interpret as a consequence of spatial gradients in their chemical abundances, such that they exist in different regions or dynamical regimes. This is direct observational evidence for the three-dimensional thermo-chemical stratification of an exoplanet atmosphere derived from high-resolution ground-based spectroscopy.",2111.12732v2 2022-06-06,Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet,"Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.",2206.02427v1 2022-07-26,Loop currents in $A$V$_3$Sb$_5$ kagome metals: multipolar and toroidal magnetic orders,"Experiments in the recently discovered vanadium-based kagome metals have suggested that their charge-ordered state displays not only bond distortions, characteristic of a ``real"" charge density-wave (rCDW), but also time-reversal symmetry-breaking, typical of loop currents described by an ``imaginary"" charge density-wave (iCDW). Here, we combine density-functional theory, group-theory, and phenomenological modeling to investigate the complex charge-ordered states that arise from interactions between the low-energy van Hove singularities present in the electronic structure of $A$V$_3$Sb$_5$. We find two broad classes of mixed iCDW-rCDW configurations: triple-$\mathbf{Q}$ iCDW, triple-$\mathbf{Q}$ rCDW order, dubbed $3\mathbf{Q}$-$3\mathbf{Q}$, and double-$\mathbf{Q}$ iCDW, single-$\mathbf{Q}$ rCDW order, dubbed $2\mathbf{Q}$-$1\mathbf{Q}$. Moreover, we identify seven different types of iCDW order, stemming from the different vanadium-orbital and kagome-sublattice structures of the two pairs of van Hove singularities present above and below the Fermi level. While the $2\mathbf{Q}$-$1\mathbf{Q}$ states trigger an orthorhombic distortion that breaks the threefold rotational symmetry of the kagome lattice, the $3\mathbf{Q}$-$3\mathbf{Q}$ states induce various types of subsidiary uniform magnetic orders, from conventional ferromagnetism to magnetic octupolar, magnetic toroidal, and even magnetic monopolar order. We show that these exotic orders display unique magneto-striction, magneto-electric, and magneto-electric-striction properties that can be probed experimentally to identify which iCDW state is realized in these compounds. We briefly discuss the impact of an out-of-plane modulation of the charge order and the interplay between these complex charge-ordered states and superconductivity.",2207.12820v2 2022-11-29,"Structural evolution of the kagome superconductors $A$V$_3$Sb$_5$ ($A$ = K, Rb, and Cs) through charge density wave order","The kagome superconductors KV$_3$Sb$_5$, RbV$_3$Sb$_5$, and CsV$_3$Sb$_5$ are known to display charge density wave (CDW) order which impacts the topological characteristics of their electronic structure. Details of their structural ground states and how they evolve with temperature are revealed here using single crystal X-ray crystallographic refinements as a function of temperature, carried out with synchrotron radiation. The compounds KV$_3$Sb$_5$ and RbV$_3$Sb$_5$ present 2$\times$2$\times$2 superstructures in the $Fmmm$ space group with a staggered tri-hexagonal deformation of vanadium layers. CsV$_3$Sb$_5$ displays more complex structural evolution, whose details have been unravelled by applying machine learning methods to the scattering data. Upon cooling through the CDW transition, CsV$_3$Sb$_5$ displays a staged progression of ordering from a 2$\times$2$\times$1 supercell and a 2$\times$2$\times$2 supercell into a final 2$\times$2$\times$4 supercell that persists to $T$ = 11 K and exhibits an average structure where vanadium layers display both tri-hexagonal and Star of David patterns of deformations. Diffraction from CsV$_3$Sb$_5$ under pulsed magnetic fields up to $\mu_0H$ = 28 T suggest the real component of the CDW state is insensitive to external magnetic fields.",2211.16602v3 2022-12-15,Non-trivial band topology and orbital-selective electronic nematicity in a new titanium-based kagome superconductor,"Electronic nematicity that spontaneously breaks rotational symmetry has been shown as a generic phenomenon in correlated quantum systems including high-temperature superconductors and the AV3Sb5 (A = K, Rb, Cs) family with a kagome network. Identifying the driving force has been a central challenge for understanding nematicity. In iron-based superconductors, the problem is complicated because the spin, orbital and lattice degrees of freedom are intimately coupled. In vanadium-based kagome superconductors AV3Sb5, the electronic nematicity exhibits an intriguing entanglement with the charge density wave order (CDW), making understanding its origin difficult. Recently, a new family of titanium-based kagome superconductors ATi3Bi5 has been synthesized. In sharp contrast to its vanadium-based counterpart, the electronic nematicity occurs in the absence of CDW. ATi3Bi5 provides a new window to explore the mechanism of electronic nematicity and its interplay with the orbital degree of freedom. Here, we combine polarization-dependent angle-resolved photoemission spectroscopy with density functional theory to directly reveal the band topology and orbital characters of the multi-orbital RbTi3Bi5. The promising coexistence of flat bands, type-II Dirac nodal line and nontrivial Z2 topological states is identified in RbTi3Bi5. Remarkably, our study clearly unveils the orbital character change along the G-M and G-K directions, implying a strong intrinsic inter-orbital coupling in the Ti-based kagome metals, reminiscent of iron-based superconductors. Furthermore, doping-dependent measurements directly uncover the orbital-selective features in the kagome bands, which can be well explained by the d-p hybridization. The suggested d-p hybridization, in collaboration with the inter-orbital coupling, could account for the electronic nematicity in ATi3Bi5.",2212.07958v1 2023-02-10,"Unidirectional electron-phonon coupling as a ""fingerprint'' of the nematic state in a kagome superconductor","Electronic nematicity has been commonly observed in juxtaposition with unconventional superconductivity. Understanding the nature of the nematic state, as well as its consequence on the electronic band structure and superconductivity, has become a pivotal focus in condensed matter physics. Here we use spectroscopic imaging-scanning tunneling microscopy to visualize how the interacting quasiparticles organize themselves in the nematic state of kagome superconductor CsV$_{3-x}$Ti$_x$Sb$_5$, in which twofold symmetric (C$_2$) quasiparticle scattering interference of the vanadium kagome bands emerges below the bulk nematic transition temperature (T$_{nem}$). Surprisingly, we find that the coupling to collective modes, i.e., the phonon, dramatically alters the electrons self-energy and renormalizes the Fermi velocity of the in-plane vanadium d$_{xy/x^2-y^2}$ bands only along the C$_2$ direction, making the low-energy dispersion and electron dynamics highly nonequivalent along the three lattice directions. The anti-correlation between T$_{nem}$ and the superconducting transition temperature upon Ti substitution further suggests a possible competition between superconductivity and electron nematicity in this series, with a principal superconducting gap opening on the same V bands once the nematic state is totally suppressed. The organizing principle of these quasiparticles provides essential information for understanding the interplay between charge density wave and superconductivity in these kagome superconductors, and also reveals a previously unexplored form that expands the landscape for modelling electronic nematicity in systems where electron correlations and lattice degree of freedom act in concert.",2302.05115v1 2023-04-13,Phonon promoted charge density wave in topological kagome metal ScV$_{6}$Sn$_{6}$,"Charge density wave (CDW) orders in vanadium-based kagome metals have recently received tremendous attention due to their unique properties and intricate interplay with exotic correlated phenomena, topological and symmetry-breaking states. However, the origin of the CDW order remains a topic of debate. The discovery of ScV$_{6}$Sn$_{6}$, a vanadium-based bilayer kagome metal exhibiting an in-plane $\sqrt{3}$ x $\sqrt{3} $ $\textit{R}$30${\deg}$ CDW order with time-reversal symmetry breaking, provides a novel platform to explore the underlying mechanism behind the unconventional CDW. Here, we combine high-resolution angle-resolved photoemission spectroscopy, Raman scattering measurements and density functional theory to investigate the electronic structures and phonon modes of ScV$_{6}$Sn$_{6}$ and their evolution with temperature. We identify topologically nontrivial Dirac surface states and multiple van Hove singularities (VHSs) in the vicinity of the Fermi level, with one VHS near the K point exhibiting nesting wave vectors in proximity to the $\sqrt{3}$ x $\sqrt{3}$ $\textit{R}$30${\deg}$ CDW wave vector. Additionally, Raman measurements indicate a strong intrinsic electron-phonon coupling in ScV$_{6}$Sn$_{6}$, as evidenced by the presence of a two-phonon mode and a large frequency amplitude mode. Our findings highlight the fundamental role of lattice degrees of freedom in promoting the CDW in ScV$_{6}$Sn$_{6}$ and provide important insights into the fascinating correlation phenomena observed in kagome metals.",2304.06431v1 2023-05-03,Universal sublinear resistivity in vanadium kagome materials hosting charge density waves,"The recent discovery of a charge density (CDW) state in ScV$_6$Sn$_6$ at $T_{\textrm{CDW}}$ = 91 K offers new opportunities to understand the origins of electronic instabilities in topological kagome systems. By comparing to the isostructural non-CDW compound LuV$_6$Sn$_6$, we unravel interesting electrical transport properties in ScV$_6$Sn$_6$, above and below the charge ordering temperature. We observed that by applying a magnetic field along the $a$ axis, the temperature behavior of the longitudinal resistivity in ScV$_6$Sn$_6$ changes from metal-like to insulator-like above the CDW transition. We show that in the charge ordered state ScV$_6$Sn$_6$ follows the Fermi liquid behavior while above that, it transforms into a non-Fermi liquid phase in which the resistivity varies sublinearly over a broad temperature range. The sublinear resistivity, which scales by $T^{3/5}$ is a common feature among other vanadium-containing kagome compounds exhibiting CDW states such as KV$_3$Sb$_5$, RbV$_3$Sb$_5$, and CsV$_3$Sb$_5$. By contrast, the non-Fermi liquid behavior does not occur in LuV$_6$Sn$_6$. We explain the $T^{3/5}$ universal scaling behavior from the Coulomb scattering between Dirac electrons and Van Hove singularities; common features in the electronic structure of kagome materials. Finally, we show anomalous Hall-like behavior in ScV$_6$Sn$_6$ below $T_{\textrm{CDW}}$, which is absent in the Lu compound. Comparing the transport properties of ScV$_6$Sn$_6$ and LuV$_6$Sn$_6$ is valuable to highlight the impacts of the unusual CDW in the Sc compound.",2305.02393v2 2023-06-14,Vanadium oxide and a sharp onset of cold-trapping on a giant exoplanet,"The abundance of refractory elements in giant planets can provide key insights into their formation histories. Due to the Solar System giants' low temperatures, refractory elements condense below the cloud deck limiting sensing capabilities to only highly volatile elements. Recently, ultra-hot giant exoplanets have allowed for some refractory elements to be measured showing abundances broadly consistent with the solar nebula with titanium likely condensed out of the photosphere. Here we report precise abundance constraints of 14 major refractory elements on the ultra-hot giant planet WASP-76b that show distinct deviations from proto-solar, and a sharp onset in condensation temperature. In particular, we find nickel to be enriched, a possible sign of the accretion of a differentiated object's core during the planet's evolution. Elements with condensation temperatures below 1,550 K otherwise closely match those of the Sun before sharply transitioning to being strongly depleted above 1,550 K, well explained by nightside cold-trapping. We further unambiguously detect vanadium oxide on WASP-76b, a molecule long hypothesized to drive atmospheric thermal inversions, and also observe a global east-west asymmetry in its absorption signals. Overall, our findings indicate that giant planets have a mostly stellar-like refractory elemental content and suggest that temperature sequences of hot Jupiter spectra can show abrupt transitions wherein a mineral species is either present, or completely absent if a cold-trap exists below its condensation temperature.",2306.08739v1 2023-06-20,Unlocking the Inaccessible Energy Density of Sodium Vanadium Fluorophosphate Electrode Materials by Transition Metal Mixing,"Sodium (Na) vanadium (V) fluorophosphate $\mathrm{Na_xV_2(PO_4)_2F_3}$ (NVPF) is a highly attractive intercalation electrode material due to its high operation voltage, large capacity, and long cycle life. However, several issues limit the full utilization of NVPF's energy density: 1) the high voltage plateau associated with extracting the ""third"" Na ion in the reaction N$_1$VPF $\rightarrow$ VPF (~4.9 V vs Na/Na$^+$) appears above the electrochemical stability window of most practical electrolytes (~4.5 V); 2) a sudden drop in Na-ion diffusivity is observed near composition $\mathrm{Na_1V_2(PO_4)_2F_3}$. Therefore, it is important to investigate the potential substitution of V by other transition metals in NVPF derivatives, which can access the extraction of the third Na-ion. In this work, we investigate the partial substitution of V with molybdenum (Mo), niobium (Nb), or tungsten (W) in NVPF to improve its energy density. We examine the structural and electrochemical behaviors of $\mathrm{Na_xV_{2-y}Mo_y(PO_4)_2F_3}$, $\mathrm{Na_xV_{2-y}Nb_y(PO_4)_2F_3}$, and $\mathrm{Na_xW_{2}(PO_4)_2F_3}$ across the whole Na composition region of 0 $\leq$ x $\leq$ 4, and at various transition metal substitution levels, namely, y=0.5, 1.0, 1.5, 2.0 for Mo, and y=1.0, 2.0 for Nb. We find that partial substitution of 50% V by Mo in NVPF reduces the voltage plateau for extracting the third Na ion by 0.6 Volts, which enables further Na extraction from $\mathrm{Na_1Mo_{2}(PO_4)_2F_3}$ and increases the theoretical gravimetric capacity from ~128 to ~174 mAh/g. Analysis of the migration barriers for Na-ions in $\mathrm{Na_xVMo(PO_4)_2F_3}$ unveils improved kinetic properties over NVPF. The proposed $\mathrm{Na_xVMo(PO_4)_2F_3}$ material provides an optimal gravimetric energy density of ~577.3 Wh/kg versus ~507 Wh/kg for the pristine NVPF, which amounts to an increase of ~13.9%.",2306.11275v1 2023-09-21,VO$_2$ under hydrostatic pressure: Isostructural phase transition close to a critical end-point,"The high-pressure behavior of monoclinic VO$_2$ is revisited by a combination of Raman spectroscopy and X-ray diffraction on a single crystal under hydrostatic conditions at room temperature. A soft mode is observed up to P$_c$ = 13.9(1) GPa. At this pressure, an isostructural phase transition between two monoclinic phases M$_1$ and M$_1$' hinders this instability. The features of this transformation (no apparent volume jump) indicate that the compression at ambient temperature passes close to a critical point. An analysis based on the Landau theory of phase transitions gives a complete description of the P-T phase diagram. The M1' is characterized by spontaneous displacements of the oxygen sub-lattice without any strong modification of the VV dimers distances nor the twist angle of vanadium chains. The spontaneous displacements of oxygen and the spontaneous deformations of the ($b_{M1}$, $c_{M1}$) plane follow the same quadratic dependence with pressure and scales with spontaneous shifts of the Raman phonons located at 225, 260 and 310 cm$^{-1}$. Pressure-induced shifts of the Raman peaks allows for new assignment of several Raman modes. In particular, the A$_g$(1)+B$_g$(1) modes at 145 cm$^{-1}$ are identified as the vanadium displacive phonons. A second transformation in the metallic phase X, which is found triclinic (P$\bar1$) is observed starting at 32 GPa, with a wide coexistence region (up to 42 GPa). Upon decompression, phase X transforms, between 20 GPa and 3 GPa, to another phase that is neither the M$_1$' nor M$_1$ phase. The structural transitions identified under pressure match with all the previously reported electronic modifications confirming that lattice and electronic degrees of freedom are closely coupled in this correlated material.",2309.12020v1 2023-12-29,Bilayer Vanadium Dioxide Thin Film with Elevated Transition Temperatures and High Resistance Switching,"Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance switching still remains a challenge. This study introduces a two-step atmospheric oxidation approach to fabricate bilayer VO$_{2-x}$/VO$_2$ films on a c-plane sapphire substrate. To quantify the impact of the VO$_2$ buffer layer, a single-layer VO$_2$ film of the same thickness was also fabricated. The bilayer VO$_{2-x}$/VO$_2$ films wherein the top VO$_{2-x}$ film was under-oxidized demonstrated an elevation in TIMT reaching ~97 $^\circ$C, one of the highest reported to date for VO$_2$ films and is achieved in a doping-free manner. Our results also reveal a one-order increase in resistance switching, with the optimum bilayer VO$_2$/VO$_2$ film exhibiting ~3.6 orders of switching from 25 $^\circ$C to 110 $^\circ$C, compared to the optimum single-layer VO$_2$ reference film. This is accompanied by a one-order decrease in the on-state resistance in its metallic phase. The elevation in TIMT, coupled with increased strain extracted from the XRD characterization of the bilayer film, suggests the possibility of compressive strain along the c-axis. These VO$_{2-x}$/VO$_2$ films also demonstrate a significant change in the slope of their resistance vs temperature curves contrary to the conventional smooth transition. This feature was ascribed to the rutile/monoclinic quasi-heterostructure formed due to the top VO$_{2-x}$ film having a reduced TIMT. Our findings carry significant implications for both the lucid fabrication of VO$_2$ thin film devices as well as the study of phase transitions in correlated oxides.",2312.17437v1 2024-02-02,Light-induced phase transitions in vanadium dioxide: a tensor network study,"Nonequilibrium phase transitions driven by light pulses represent a rapidly developing field in condensed matter physics. As one of the archetypal strongly correlated materials, vanadium dioxide (VO2) undergoes a structural phase transition (SPT) from a monoclinic (M1) to rutile (R) structure and an insulator-to-metal transition (IMT) either when heated above 340 K or when excited by an ultrafast laser pulse. Here, we present a tensor network study of the light-induced phase transitions in VO2 based on a quasi-one-dimensional model with all the important ingredients -- multi-orbital character, electron-lattice coupling, and electron-electron correlations -- being included. We show that this model qualitatively captures the equilibrium properties of VO2 by calculating the ground state phase diagram and finite-temperature phase transitions. A hybrid quantum-classical tensor-network method is used to simulate the dynamics following photoexcitation. We find that the structure can transform faster than the harmonic phonon modes of M1 phase, suggesting lattice nonlinearity is key in the SPT. We also find separate timescales for the evolution of dimerization and tilt distortions in the lattice dynamics, as well as the loss and subsequent partial restoration behavior of the displacements, which can provide an explanation for the complex dynamics observed in recent experiments [C. Brahms et al., arXiv:XXXX.XXXXX]. Moreover, decoupled SPT and IMT dynamics are observed in the numerical simulations: while the initial M1 structure transforms to the R one in tens of femtoseconds, the IMT occurs quasi-instantaneously, consistent with recent experimental findings. Our theoretical studies provide insight into the light-induced phase transitions of VO2, revealing unexpected non-monotonic transformation pathways and paving the way for future studies of non-thermal phase transformations.",2402.01247v2 1997-10-15,Near-infrared narrow-band photometry of M-giant and Mira stars: models meet observations,"From near-infrared, narrow-band photometry of 256 oxygen-rich Mira variables we obtain evidence about the loops that these stars follow in colour-colour diagrams. We also find a phase lag between indices related to molecular band-strength of titanium oxide and vanadium oxide. We compute colours for normal M-giants and Miras using hydrostatic and hydrodynamic model atmospheres and very extensive up-to-date line lists. Normal M-giants colours are well reproduced, reaching a high quantitative agreement with observations for spectral types earlier than M7. The out-of-phase variations of the various spectral features of Miras are also acceptably reproduced, despite limitations in the modelling. This enables us to confirm that the phase lag phenomenon results from the propagation of perturbations in the extended atmosphere. It opens new perspectives in the spectral modelling of Miras.",9710157v1 1996-03-04,Convergent expansions for properties of the Heisenberg model for CaV$_4$O$_9$,"We have carried out a wide range of calculations for the $S=1/2$ Heisenberg model with nearest- and second-neighbor interactions on a two-dimensional lattice which describes the geometry of the vanadium ions in the spin-gap system CaV$_4$O$_9$. The methods used were convergent high-order perturbation expansions (``Ising'' and ``Plaquette'' expansions at $T=0$, as well as high-temperature expansions) for quantities such as the uniform susceptibility, sublattice magnetization, and triplet elementary excitation spectrum. Comparison with the data for CaV$_4$O$_9$ indicates that its magnetic properties are well described by nearest-neighbor exchange of about 200K in conjunction with second-neighbor exchange of about 100K.",9603025v1 1997-11-06,"Raman, infrared and optical spectra of the spin-Peierls compound NaV_2O_5","We have measured polarized spectra of Raman scattering, infrared and optical transmission of NaV_2O_5 single crystals above the temperature of the spin-Peierls transition Tsp=35 K. Some of the far-infrared (FIR) phonon lines are strongly asymmetric, due to the spin-phonon interaction. In addition to the phonon lines, a broad band was observed in the c(aa)c Raman spectrum and in the E||a FIR transmission spectrum. A possible origin of these bands is discussed. The absorption band at 10000 cm-1 1.25 eV is attributed to vanadium d-d electronic transitions while the absorption edge above 3 eV is supposed to correspond to the onset of charge-transfer transitions.",9711048v1 1998-01-12,Band-width control in a perovskite-type 3d^1 correlated metal Ca_1-xSr_xVO_3. II. Optical spectroscopy investigation,"Optical conductivity spectra of single crystals of Ca_1-xSr_xVO_3 have been studied to elucidate how the electronic behavior depends on the strength of the electron correlation without changing the nominal number of electrons per vanadium atom. The effective mass deduced by the analysis of the Drude-like contribution do not show critical enhancement, even though the system is close to the Mott transition. Besides the Drude-like contribution, two anomalous features were observed in the optical conductivity spectra of the intraband transition within the 3d band. These features can be assigned to transitions involving the incoherent and coherent bands near the Fermi level. The large spectral weight redistribution in this system, however, does not involve a large mass enhancement.",9801086v2 1998-02-03,Magnetic properties of the coupled ladder system MgV$_2$O$_5$,"We present magnetic susceptibility measurements on MgV$_2$O$_5$, a compound in which the vanadium oxide planes have the same topology as in CaV$_2$O$_5$. The most striking property is that there is an energy gap of about 15 K, much smaller than in CaV$_2$O$_5$, where the values reported are of the order of 500 K. We show that this may be understood naturally in terms of the phase diagram of the frustrated, coupled ladder system. This analysis leads to the prediction that MgV$_2$O$_5$ should have incommensurate dynamic spin fluctuations.",9802029v1 1998-06-05,Inversion symmetry in the spin-Peierls compound NaV2O5,"At room-temperature NaV2O5 was found to have the centrosymmetric space group Pmmn. This space group implies the presence of only one kind of V site in contrast with previous reports of the non-centrosymmetric counterpart P21mn. This indicates a non-integer valence state of vanadium. Furthermore, this symmetry has consequences for the interpretation of the transition at 34 K, which was ascribed to a spin-Peierls transition of one dimensional chains of V4+.",9806081v2 1998-08-15,High frequency dielectric and magnetic anomaly at the phase transition in NaV2O5,"We found anomalies in the temperature dependence of the dielectric and the magnetic susceptibiliy of NaV_2O_5 in the microwave and far infrared frequency ranges. The anomalies occur at the phase transition temperature T_c, at which the spin gap opens. The real parts of the dielectric constants epsilon_a and epsilon_c decrease below T_c. The decrease of epsilon_a (except for the narrow region close to T_c) is proportional to the intensity of the x-ray reflection appearing at T_c. The dielectric constant anomaly can be explained by the zigzag charge ordering in the ab-plane appearing below T_c. The anomaly of the microwave magnetic losses is probably related to the coupling between the spin and charge degrees of freedom in vanadium ladders.",9808165v2 1999-06-14,Electronic structure and magnetic interactions in LiV2O4,"We present results of all-electron electronic structure calculations for the recently discovered d electron heavy fermion compound LiV_2O_4. The augmented spherical wave calculations are based on density functional theory within the local density approximation. The electronic properties near the Fermi energy originate almost exclusively from V 3d t_{2g} states, which fall into two equally occupied subbands: While sigma-type metal-metal bonding leads to rather broad bands, small pi-type p-d overlap causes a narrow peak at E_F. Without the geometric frustration inherent in the crystal structure, spin-polarized calculations reveal an antiferromagnetic ground state and ferromagnetic order at slightly higher energy. Since direct d-d exchange interaction plays only a minor role, ordering of the localized vanadium moments can be attributed exclusively to a rather weak superexchange interaction. With the magnetic order suppressed by the geometric frustration, the remaining spin fluctuations suggest an explanation of the low temperature behaviour of the specific heat.",9906194v1 1999-06-25,Direct exchange in the edge-sharing spin-1/2 compound MgVO_3,"Bandstructure calculations with different spin arrangement for the spin-chain compound MgVO_3 have been performed, and paramagnetic as well as magnetic solutions with ferro- and antiferromagnetically ordered chains are found, the magnetic solutions being by 0.22 eV per formula unit lower than the paramagnetic one. The orbital analysis of the narrow band crossing the Fermi level in the paramagnetic solution reveals that the band has almost pure vanadium 3d character, the lobes of the relevant d-orbitals at the neighboring in-chain sites being directed towards each other, which suggests direct exchange. The tight-binding analysis of the band confirms the strong exchange transfer between neighboring in-chain V-ions. Besides, some additional superexchange transfer terms are found, which give rise both to in-plane coupling between the chains and to frustration, the dominant frustration occuring due to the interchain interaction.",9906385v1 1999-07-15,First evidence for charge ordering in NaV$_2$O$_5$ from Raman spectroscopy,"We argue on the basis of symmetry selection rules and Raman scattering spectra that NaV$_2$O$_5$ undergoes a charge ordering phase transition at T$_c$=34 K. Such a transition is characterized by the redistribution of the charges at the phase transition and corresponds to the change of the vanadium ions, from uniform V$^{4.5+}$ to two different V$^{4+}$ and V$^{5+}$ states. In the low temperature phase the V$^{4+}$ ions are forming a ""zig-zag"" ladder structure along the {\bf b}-axis, consistent with the symmetry of the P2/b space group.",9907218v1 1999-12-22,Valence band excitations in V_2O_5,"We present a joint theoretical and experimental investigation of the electronic and optical properties of vanadium pentoxide. Electron energy-loss spectroscopy in transmission was employed to measure the momentum-dependent loss function. This in turn was used to derive the optical conductivity, which is compared to the results of band structure calculations. A good qualitative and quantitative agreement between the theoretical and the experimental optical conductivity was observed. The experimentally observed anisotropy of the optical properties of V_2O_5 could be understood in the light of an analysis of the theoretical data involving the decomposition of the calculated optical conductivity into contributions from transitions into selected energy regions of the conduction band. In addition, based upon a tight binding fit to the band structure, values are given for the effective V3d_xy-O2p hopping terms and are compared to the corresponding values for alpha'-NaV_2O_5.",9912400v1 2000-01-13,Friedel Oscillations and Charge-density Waves Pinning in Quasi-one-dimensional Conductors: An X-ray Access,"We present an x-ray diffraction study of the Vanadium-doped blue bronze K0.3(Mo0.972V0.028)O3. At low temperature, we have observed both an intensity asymmetry of the +-2kF satellite reflections relative to the pure compound, and a profile asymmetry of each satellite reflections. We show that the profile asymmetry is due to Friedel oscillation around the V substituant and that the intensity asymmetry is related to the charge density wave (CDW) pinning. These two effects, intensity and profile asymmetries, gives for the first time access to the local properties of CDW in disordered systems, including the pinning and even the phase shift of FOs.",0001189v2 2000-03-08,X-ray Anomalous Scattering Study of a Charge-Ordered State in NaV2O5,"Charge ordering of V4+ and V5+ in NaV2O5 has been studied by an X-ray diffraction technique using anomalous scattering near a vanadium K-absorption edge to critically enhance a contrast between the two ions. A dramatic energy dependence of the superlattice intensities is observed below Tc=35 K. Consequently, the charge ordering pattern is the zigzag-type ladders with the unit cell 2a*2b*4c, but not the chain-type originally proposed for the spin-Peierls state. Charge disproportionation suggested in our model as the average valence V^{4.5+-delta_c/2} is observed below T_C, showing continuous variation of delta_c as a function of temperature.",0003129v3 2000-06-26,Charge-ordering phase transition and order-disorder effects in the Raman spectra of NaV2O5,"In the ac polarized Raman spectra of NaV2O5 we have found anomalous phonon broadening, and an energy shift of the low-frequency mode as a function of the temperature. These effects are related to the breaking of translational symmetry, caused by electrical disorder that originates from the fluctuating nature of the V {4.5+} valence state of vanadium. The structural correlation length, obtained from comparisons between the measured and calculated Raman scattering spectra, diverges at T< 5 K, indicating the existence of the long-range charge order at very low temperatures, probably at T=0 K.",0006408v2 2000-09-29,Spin-Isospin Model of NaV_2O_5,"We argue that in the quarter-filled ladder compound NaV_2O_5 the quasi-one-dimensional spin system is strongly coupled to a low-energy antiferroelectric mode of the excitonic type. This mode results from the interplay between the electron hopping along the rungs of the vanadium two-leg ladders and the Coulomb repulsion between electrons. The charge ordering observed in sodium vanadate at T_c = 34K corresponds to the softening of the antiferroelectric mode. We consider the spin-isospin model, which describes the spin and low-energy charge degrees of freedom in sodium vanadate. Within this model we explain the observed anomalous temperature-dependence of the dielectric susceptibility at T_c and the midinfrared absorption continuum. We identify the broad structure in the low-energy optical absorption spectrum of NaV_2O_5 with the continuum formed by two spinons and one low-energy charge excitation.",0009464v1 2001-01-18,Modeling the electronic behavior of $γ$-LiV2O5: a microscopic study,"We determine the electronic structure of the one-dimensional spin-1/2 Heisenberg compound $\gamma$-LiV$_2$O$_5$, which has two inequivalent vanadium ions, V(1) and V(2), via density-functional calculations. We find a relative V(1)-V(2) charge ordering of roughly $70:30$. We discuss the influence of the charge ordering on the electronic structure and the magnetic behavior. We give estimates of the basic hopping matrix elements and compare with the most studied $\alpha '$-NaV$_2$O$_5$.",0101282v3 2001-05-08,Charge excitations in NaV$_{2}$O$_{5}$,"We calculate the electron-energy loss spectrum and the optical conductivity for NaV$_{2}$O$_{5}$ using the standard Lanczos algorithm. The vanadium ions in NaV$_{2}$O$_{5}$ form a system of coupled ladders which can be described by a quarter-filled extended Hubbard model. Since this system has a large unit cell, one has to be very careful to avoid finite-size effects in the calculations. We show this by performing exact diagonalization of different clusters with up to 16 sites. The calculated loss function for the extended Hubbard model shows good agreement with experimental spectra. Furthermore, a qualitative description of the optical conductivity is obtained with the same Hamiltonian, and the same set of model parameters. The comparison with the experiment shows that interladder hopping is of minor importance for a realistic description of charge excitations in NaV$_{2}$O$_{5}$. We find that the character of the excitations depends strongly on the direction of momentum transfer.",0105165v2 2001-06-12,Charge excitations in LiV$_{2}$O$_{5}$ and NaV$_{2}$O$_{5}$: similarities and differences,"We calculate the optical conductivity of LiV$_{2}$O$_{5}$ and NaV$_{2}$O$_{5}$ using exact numerical diagonalization of a quarter-filled extended Hubbard model on a system of coupled ladders. In particular, electronic correlations are treated exactly, and a quantitative agreement between calculated and experimentally observed optical conductivity of these two vanadium oxides is presented. Furthermore, it is found that LiV$_{2}$O$_{5}$ differs from NaV$_{2}$O$_{5}$ not only in the charge ordering pattern but also in the nature of the inter-ladder coupling: In contrast to LiV$_{2}$O$_{5}$, in NaV$_{2}$O$_{5}$ neighboring ladders are coupled by a strong Coulomb repulsion, and not by inter-ladder hopping.",0106213v3 2001-06-21,Superconductivity mediated by charge fluctuations in layered molecular crystals,"In elemental metals the pairing of electrons leading to superconductivity is mediated by the vibrations of the crystal lattice and the pairs have spherical symmetry. For layered organic molecular crystals there is no consensus about the pairing symmetry or the mechanism of the superconductivity. We show theoretically that the mechanism of superconductivity for members of the (BEDT-TTF)2X family with the theta and beta'' crystal structures is mediated by charge fluctuations and the superconducting order parameter has dxy symmetry. This is in contrast to the kappa-(BEDT-TTF)2X family, for which theoretical calculations give superconductivity mediated by spin fluctuations and with dx2-y2 symmetry. Our conclusions are based on systematic many-body calculations using slave-boson theory of an extended Hubbard model. This is the simplest model that can describe the competition between metallic, superconducting, insulating, and charge ordered phases that occurs in the theta and beta'' materials. Based on the theory presented we predict several materials that should become superconducting under pressure.",0106425v2 2001-08-01,A microscopic model for the structural transition and spin gap formation in alpha'-NaV2O5,"We present a microscopic model for alpha'-NaV2O5. Using an extended Hubbard model for the vanadium layers we derive an effective low-energy model consisting of pseudospin Ising chains and Heisenberg chains coupled to each other. We find a ``spin-Peierls-Ising'' phase transition which causes charge ordering on every second ladder and superexchange alternation on the other ladders. This transition can be identified with the first transition of the two closeby transitions observed in experiment. Due to charge ordering the effective coupling between the lattice and the superexchange is enhanced. This is demonstrated within a Slater-Koster approximation. It leads to a second instability with superexchange alternation on the charge-ordered ladders due to an alternating shift of the O sites on the rungs of that ladder. We can explain within our model the observed spin gap, the anomalous BCS ratio, and the anomalous shift of the critical temperature of the first transition in a magnetic field. To test the calculated superstructure we determine the low-energy magnon dispersion and find agreement with experiment.",0108008v1 2001-09-05,X-ray anomalous scattering investigations on the charge order in $α^\prime$-NaV$_2$O$_5$,"Anomalous x-ray diffraction studies show that the charge ordering in $\alpha^\prime$-NaV$_2$O$_5$ is of zig-zag type in all vanadium ladders. We have found that there are two models of the stacking of layers along \emph{c-}direction, each of them consisting of 2 degenerated patterns, and that the experimental data is well reproduced if the 2 patterns appears simultaneously. We believe that the low temperature structure contains stacking faults separating regions corresponding to the four possible patterns.",0109091v1 2001-11-07,Atomic scale imaging and spectroscopy of the V_2O_3 (0001)-surface: bulk versus surface effects,"We present atomic scale images of a V_2O_3 (0001)-surface, which show that the surface is susceptible to reconstruction by dimerization of vanadium ions. The atomic order of the surface depends sensitively on the surface preparation. Scanning tunneling spectroscopy proves a dimerized surface has a gap in the electronic density of states at the Fermi energy, while a surface prepared by sputtering and successive annealing shows no dimerization and no gap. Photoemission spectra depend sensitively on the surface structure and are consistent with scanning tunneling spectroscopy data. The measurements explain inconsistencies in photoemission experiments performed on such oxides in the past.",0111113v1 2002-01-27,Electron Correlation Effects in Resonant Inelastic X-ray Scattering of NaV2O5,"Element- and site-specific resonant inelastic x-ray scattering spectroscopy (RIXS) is employed to investigate electron correlation effects in {$\rm NaV_2O_5$}. In contrast to single photon techniques, RIXS at the vanadium $L_3$ edge is able to probe $d-d^*$ transitions between V d-bands. A sharp energy loss feature is observed at -1.56 eV, which is well reproduced by a model calculation including correlation effects. The calculation identifies the loss feature as excitation between the lower and upper Hubbard bands and permits an accurate determination of the Hubbard interaction term $U= 3.0 \pm 0.2$ eV.",0201497v1 2002-02-05,Holographic analysis of diffraction structure factors,"We combine the theory of inside-source/inside-detector x-ray fluorescence holography and Kossel lines/x ray standing waves in kinematic approximation to directly obtain the phases of the diffraction structure factors. The influence of Kossel lines and standing waves on holography is also discussed. We obtain partial phase determination from experimental data obtaining the sign of the real part of the structure factor for several reciprocal lattice vectors of a vanadium crystal.",0202061v2 2002-02-24,Orbital-resolved Soft X-Ray Spectroscopy in NaV2O5,"We demonstrate that angle-resolved soft x-ray spectroscopy can resolve absorption by inequivalent oxygen sites and by different orbitals belonging to the same site in NaV2O5. By rotating the polarization direction, we see a dramatic change in the absorption spectra at the oxygen K edge. Our theory identifies the detailed composition of the spectra and predicts a correct energy-ordering of the orbitals of three inequivalent oxygen atoms. Because different orbitals dominate absorption spectra at different energies and angles, one can excite at a specific site and ``orbital''. In contrast, absorption at the vanadium L edge does not show large changes when varying the polarization direction. The reason for this is that different excitation channels (involving different initial states for the excited electron) overlap in energy and vary in compensating ways, obscuring each channel's sensitive polarization dependence.",0202424v1 2002-03-11,Pressure dependence of phase transitions in the quasi one-dimensional metal-insulator transition system beta-Na1/3V2O5,"The pressure dependence of phase transitions in the quasi one-dimensional vanadium oxide $\beta$-Na$_{1/3}$V$_2$O$_5$ has been studied by magnetic susceptibility and electrical resistivity measurements. The pressure dependence of the various transition temperatures is quite differently. The transition at T=240 K, previously reported and attributed to ordering on Na sites, and a second transition at $T \approx 222$ K, reported here for the first time and attributed to a further increase of order on Na sites, are almost independent of pressure. On the other hand, the metal-insulator (MI) transition at $T_{MI}=130$ K shifts to lower temperatures, while the magnetic transition at $T_N=24$ K shifts to higher temperatures with increasing pressure. We discuss the different pressure dependencies of $T_{MI}$ and $T_N$ in terms of increasing interchain coupling and the MI transition to be of Peierls type.",0203234v1 2002-03-14,Optical properties of NaxV2O5,"The optical properties of sodium-deficient NaxV2O5 (0.85 < x <1) single crystals are analyzed in the wide energy range, from 0.012 to 4.5 eV, using ellipsometry, infrared reflectivity, and Raman scattering techniques. The material remains insulating up to the maximal achieved hole concentration of about 15%. In sodium deficient samples the optical absorption peak associated to the fundamental electronic gap develops at about 0.44 eV. It corresponds to the transition between vanadium dxy and the impurity band, which forms in the middle of the pure NaV2O5 gap. Raman spectra measured with incident photon energy larger then 2 eV show strong resonant behavior, due to the presence of the hole-doping activated optical transitions, peaked at 2.8 eV.",0203298v1 2002-06-25,Genuine Electronic States of Vanadium Perovskites Revealed by High-Energy Photoemission,"Bulk-sensitive high-resolution photoemission was carried out on a prototype 3d1 metallic Sr1-xCaxVO3. In a strong contrast to so far reported results, the bulk spectral functions are revealed to be insensitive to x. The conservation of the density of states at the Fermi level in spite of the electron correlation is clarified by the successful suppression and deconvolution of the surface contribution. Our study has demonstrated the importance of high-energy and high-resolution photoemission spectroscopy for revealing detailed bulk electronic states of transition metal oxides.",0206471v2 2002-07-24,A theoretical study of the structural phases of Group 5B - 6B metals and their transport properties,"In order to predict the stable and metastable phases of the bcc metals in the block of the Periodic Table defined by groups 5B to 6B and periods 4 to 6, as well as the structure dependence of their transport properties, we have performed full potential computations of the total energies per unit cell as a function of the c/a ratio at constant experimental volume. In all cases, a metastable body centered tetragonal (bct) phase was predicted from the calculations. The total energy differences between the calculated stable and metastable phases ranged from 0.09 eV/cell (vanadium) to 0.39 eV/cell (tungsten). The trends in resistivity as a function of structure and atomic number are discussed in terms of a model of electron transport in metals. Theoretical calculations of the electrical resistivity and other transport properties show that bct phases derived from group 5B elements are more conductive than the corresponding bcc phases, while bct phases formed from group 6B elements are less conductive than the corresponding bcc phases. Special attention is paid to the phases of tantalum where we show that the frequently observed beta phase is not a simple tetragonal distortion of bcc tantalum.",0207590v1 2002-09-17,Sr2V3O9 and Ba2V3O9: quasi one-dimensional spin-systems with an anomalous low temperature susceptibility,"The magnetic behaviour of the low-dimensional Vanadium-oxides Sr2V3O9 and Ba2V3O9 was investigated by means of magnetic susceptibility and specific heat measurements. In both compounds, the results can be very well described by an S=1/2 Heisenberg antiferromagnetic chain with an intrachain exchange of J = 82 K and J = 94 K in Sr2V3O9 and Ba2V3O9, respectively. In Sr2V3O9, antiferromagnetic ordering at T_N = 5.3 K indicate a weak interchain exchange of the order of J_perp ~ 2 K. In contrast, no evidence for magnetic order was found in Ba2V3O9 down to 0.5 K, pointing to an even smaller interchain coupling. In both compounds, we observe a pronounced Curie-like increase of the susceptibility below 30 K, which we tentatively attribute to a staggered field effect induced by the applied magnetic field. Results of LDA calculations support the quasi one-dimensional character and indicate that in Sr2V3O9, the magnetic chain is perpendicular to the structural one with the magnetic exchange being transferred through VO4 tetrahedra.",0209409v1 2002-10-09,Magnetic susceptibility in quasi one-dimensional Ba2V3O9: chain segmentation versus the staggered field effect,"A pronounced Curie-like upturn of the magnetic susceptibility chi(T) of the quasi one-dimensional spin chain compound Ba2V3O9 has been found recently. Frequently this is taken as a signature for a staggered field mechanism due to the presence of g-factor anisotropy and Dzyaloshinskii-Moriya interaction. We calculate this contribution within a realistic structure of vanadium 3d- and oxygen 2p-orbitals and conclude that this mechanism is far too small to explain experimental results. We propose that the Curie term is rather due to a segmentation of spin chains caused by broken magnetic bonds which leads to uncompensated S=1/2 spins of segments with odd numbers of spins. Using a finite-temperature Lanczos method we calculate their effective moment and show that ~1% of broken magnetic bonds is sufficient to reproduce the anomalous low-T behavior of chi(T) in Ba2V3O9.",0210204v2 2002-11-25,Calculation of thermal expansion coefficient of Fe/sub 3/Al with the addition of transition metal elements,"The addition of transition metal elements can significantly modify physical properties of intermetalic compounds. We studied the influence of Molybdenum and Vanadium additives on thermal expansion coefficient (CTE) of Fe/sub 3/Al and FeAl over the wide range of temperatures. The site preference of both transition metals was determined by full-potential LMTO method within the grandcanonical formalism. At low temperatures CTEs were found directly from the FP-LMTO calculations by incorporating them into the Debye model of a solid. The obtained thermal expansion for pure Fe/sub 3/Al and FeAl is within 10% of its experimentally measured values. At high temperatures we performed molecular dynamics simulations based on our many-body atomistic potentials. The parameters were fitted to reproduce the total energy of a crystal under various types of deformations obtained by FP-LMTO method and were tested with respect to different structures and vacancy formation energies. Our calculations show that addition of V decreases the CTEs of both iron-aluminides, while the addition of Mo makes Fe/sub 3/Al DO3 structure unstable.",0211569v1 2003-01-24,Raman scattering study of charge ordering in beta-Ca0.33V2O5,"Polarized Raman spectra of the calcium vanadium oxide bronze beta-Ca0.33V2O5 are measured in the temperature range between 300 K and 20 K. The charge ordering phase transition at about 150 K is characterized by the appearance of the new Raman-active modes in the spectra, and by anomalies in the electronic background scattering. The high temperature Raman scattering spectra of beta-Ca0.33V2O5 are in apparent resemblance with those of alpha'-NaV2O5, which suggests that there is a similar charge-phonon dynamics in both compounds. The study of dynamical properties and the symmetry analysis of the Raman modes show that in the mixed valence state of beta-Ca0.33V2O5 the electrons are delocalized into V1-O5-V3 orbitals. We propose that in the charge ordered state below 150 K the d-electrons localize within V1-V3 ladders, either in ""zig-zag"" fashion like in alpha'-NaV2O5 or in the forms of the double chains like in gamma-LiV2O5.",0301477v1 2003-05-12,Magnetic transition and orbital degrees of freedom in vanadium spinels,"We propose a scenario for the two phase transitions in $A$V$_2$O$_4$ ($A$=Zn, Mg, Cd), based on an effective spin-orbital model on the pyrochlore lattice. At high temperatures, spin correlations are strongly frustrated due to the lattice structure, and the transition at $\sim$50 [K] is an orbital order, supported by Jahn-Teller lattice distortion. This orbital order introduces spatial modulation of spin exchange couplings depending on the bond direction. This partially releases the frustration, and leads to a spin order at $\sim$40 [K]. We also study the stable spin configuration by taking account of third-neighbor exchange couplings and quantum fluctuations. The result is consistent with the experimental results.",0305269v1 2003-07-10,New Sol-Gel Synthesis of Ordered Nanostructured Doped ZnO Films,"A novel sol-gel route to c-axis orientated undoped and Co, Fe, Mn and V doped ZnO films is reported. Sols were prepared from a hydrated zinc acetate precursor and dimethyl formamide (DMF) solvent. Films were spin-coated on to hydrophilic sapphire substrates then dried, annealed and post-annealed, producing almost purely uniaxial ZnO crystallites and a high degree of long-range structural order. Specific orientation of hexagonal crystallites is demonstrated both perpendicular and parallel to the substrate surface. Cobalt doping resulted in the formation of columnar ZnO nanocrystals. Vanadium doped films formed the spinel oxide ZnAl2O4, resulting from the reaction between ZnO and the sapphire substrate. Structural, optical and morphological characterisation demonstrated the high quality of the films.",0307254v1 2003-11-27,Fabrication and Electrical Properties of Pure VO2 Phase Films,"We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the oxygen concentration. It is found that the pure VO2 films are epitaxially grown on Al2O3 substrate in the narrow ranges of 55-60 mTorr in an Ar+10% O2 ambient, and that the mixed phase films are synthesized when the deposition pressure slightly deviates from the optimum pressure. The (100) oriented VO2 films undergo an abrupt metal-insulator transition (MIT) with resistance change of an order of 104 at 338K. In the films of mixed phases, the small change of the resistance is observed at the same temperature. The polycrystalline films grown on SiO2/Si substrate undergo a broaden MIT of the resistance. Furthermore, the abrupt MIT and collective current motion appearing in metal are observed when the electric field is applied to the film.",0311616v2 2003-12-05,Magnetotransport near a quantum critical point in a simple metal,"We use geometric considerations to study transport properties, such as the conductivity and Hall coefficient, near the onset of a nesting-driven spin density wave in a simple metal. In particular, motivated by recent experiments on vanadium-doped chromium, we study the variation of transport coefficients with the onset of magnetism within a mean-field treatment of a model that contains nearly nested electron and hole Fermi surfaces. We show that most transport coefficients display a leading dependence that is linear in the energy gap. The coefficient of the linear term, though, can be small. In particular, we find that the Hall conductivity $\sigma_{xy}$ is essentially unchanged, due to electron-hole compensation, as the system goes through the quantum critical point. This conclusion extends a similar observation we made earlier for the case of completely flat Fermi surfaces to the immediate vicinity of the quantum critical point where nesting is present but not perfect.",0312168v1 2004-04-02,"Charge order, orbital order, and electron localization in the Magneli phase Ti4O7","The metal-insulator transition of the Magneli phase Ti4O7 is studied by means of augmented spherical wave (ASW) electronic structure calculations as based on density functional theory and the local density approximation. The results show that the metal-insulator transition arises from a complex interplay of charge order, orbital order, and singlet formation of those Ti 3d states which mediate metal-metal bonding inside the four-atom chains characteristic of the material. Ti4O7 thus combines important aspects of Fe3O4 and VO2. While the charge ordering closely resembles that observed at the Verwey transition, the orbital order and singlet formation appear to be identical to the mechanisms driving the metal-insulator transition of vanadium dioxide.",0404059v1 2004-04-03,"Optical properties, electron-phonon coupling, and Raman scattering of vanadium ladder compounds","The electronic structure of two V-based ladder compounds, the quarter-filled NaV$_2$O$_5$ in the symmetric phase and the iso-structural half-filled CaV$_2$O$_5$ is investigated by ab initio calculations. Based on the bandstructure we determine the dielectric tensor $\epsilon(\omega)$ of these systems in a wide energy range. The frequencies and eigenvectors of the fully symmetric A$_{g}$ phonon modes and the corresponding electron-phonon and spin-phonon coupling parameters are also calculated from first-principles. We determine the Raman scattering intensities of the A$_g$ phonon modes as a function of polarization and frequency of the exciting light. All results, i.e. shape and magnitude of the dielectric function, phonon frequencies and Raman intensities show very good agreement with available experimental data.",0404076v2 2004-06-03,Proximity effect of vanadium on spin-density-wave magnetism in Cr films,"The spin-density wave (SDW) state in thin chromium films is well known to be strongly affected by proximity effects from neighboring layers. To date the main attention has been given to effects arising from exchange interactions at interfaces. In the present work we report on combined neutron and synchrotron scattering studies of proximity effects in Cr/V films where the boundary condition is due to the hybridization of Cr with paramagnetic V at the interface. We find that the V/Cr interface has a strong and long-range effect on the polarization, period, and the N\'{e}el temperature of the SDW in rather thick Cr films. This unusually strong effect is unexpected and not predicted by theory.",0406071v1 2004-08-04,Rietveld refinement and electron density distribution in CuxV2O5,"Room temperature powder x-ray diffraction measurements have been carried out on polycrystalline samples of CuxV2O5 with x = 0.33, 0.40, 0.50, 0.55 and 0.60, prepared by solid state reaction in evacuated quartz tubes. All the samples were found to be in single-phase monoclinic structure. Rietveld full profile refinement of the x-ray diffraction data yielded the lattice parameters and fractional atom coordinates. Maximum entropy inversion of the diffraction data was done in order to obtain the variation in the spatial electron density distribution as a function of copper composition. These density maps show progressive positional and charge disorders in the V-O network induced by addition of copper. It is shown that the electrons donated by copper atoms are transferred to the specific vanadium atom sites.",0408084v1 2004-11-27,Point defect dynamics in bcc metals,"We present an analysis of the time evolution of self-interstitial atom and vacancy (point defect) populations in pure bcc metals under constant irradiation flux conditions. Mean-field rate equations are developed in parallel to a kinetic Monte Carlo (kMC) model. When only considering the elementary processes of defect production, defect migration, recombination and absorption at sinks, the kMC model and rate equations are shown to be equivalent and the time evolution of the point defect populations is analyzed using simple scaling arguments. We show that the typically large mismatch of the rates of interstitial and vacancy migration in bcc metals can lead to a vacancy population that grows as the square root of time. The vacancy cluster size distribution under both irreversible and reversible attachment can be described by a simple exponential function. We also consider the effect of highly mobile interstitial clusters and apply the model with parameters appropriate for vanadium and $\alpha-$iron.",0411680v1 2005-05-12,Orbital selective insulator-metal transition in V2O3 under external pressure,"We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we stress the importance of multi-orbital Coulomb interactions in concert with first-principles LDA bandstructure for a consistent understanding of the PI-PM MIT under pressure. Using LDA+DMFT, we show how the MIT is of the orbital selective type, driven by large changes in dynamical spectral weight in response to small changes in trigonal field splitting under pressure. Very good quantitative agreement with ($i$) the switch of orbital occupation and ($ii$) S=1 at each $V^{3+}$ site across the MIT, and ($iii$) carrier effective mass in the PM phase, is obtained. Finally, using the LDA+DMFT solution, we have estimated screening induced renormalisation of the local, multi-orbital Coulomb interactions. Computation of the one-particle spectral function using these screened values is shown to be in excellent quantitative agreement with very recent experimental (PES and XAS) results. These findings provide strong support for an orbital-selective Mott transition in paramagnetic ${\rm V_2O_3}$.",0505317v1 2005-06-17,On the nature of the magnetic ground-state wave function of V_2O_3,"After a brief historical introduction, we dwell on two recent experiments in the low-temperature, monoclinic phase of V_2O_3: K-edge resonant x-ray scattering and non-reciprocal linear dichroism, whose interpretations are in conflict, as they require incompatible magnetic space groups. Such a conflict is critically reviewed, in the light of the present literature, and new experimental tests are suggested, in order to determine unambiguously the magnetic group. We then focus on the correlated, non-local nature of the ground-state wave function, that is at the basis of some drawbacks of the LDA+U approach: we singled out the physical mechanism that makes LDA+U unreliable, and indicate the way out for a possible remedy. Finally we explain, by means of a symmetry argument related to the molecular wave function, why the magnetic moment lies in the glide plane, even in the absence of any local symmetry at vanadium sites.",0506431v1 2005-06-23,"Interplay among Spin, Orbital and Lattice Degrees of Freedom in $t_{2g}$ Electron Systems with Edge-Sharing Network of Octahedra","Transition metal oxides whose lattice structure has edge-sharing network of octahedra constitute a diverse group of intriguing materials besides compounds with corner-sharing octahedra such as perovskites. We present a theoretical investigation of the interplay among spin, orbital and lattice degrees of freedom in these materials. We focus on $t_{2g}$ electron systems where a keen competition among those degrees of freedom is expected to emerge under a relatively weak Jahn-Teller coupling. We study the interplay between spin and orbital degrees of freedom in vanadium spinels and titanium pyroxenes. We clarify the important role of the strong anisotropy in the orbital interactions due to the edge-sharing geometry. We also discuss the interplay between spin and lattice in chromium spinels focusing on the magnetization process under the external magnetic field.",0506598v1 2005-08-09,Structural precursor to the metal-insulator transition in V_2O_3,"The temperature dependence of the local structure of V_2O_3 in the vicinity of the metal to insulator transition (MIT) has been investigated using hard X-ray absorption spectroscopy. It is shown that the vanadium pair distance along the hexagonal c-axis changes abruptly at the MIT as expected. However, a continuous increase of the tilt of these pairs sets in already at higher temperatures and reaches its maximum value at the onset of the electronic and magnetic transition. These findings confirm recent theoretical results which claim that electron-lattice coupling is important for the MIT in V_2O_3. Our results suggest that interactions in the basal plane play a decisive role for the MIT and orbital degrees of freedom drive the MIT via changes in hybridization.",0508221v2 2006-04-17,Quantum distortion caused by magneto-elastic coupling for antiferromagnetic tetrahedral cluster of spin-1/2,"We study the effects of magneto-elastic coupling on the degenerate ground spin-state of the antiferromagnetic Heisenberg model on a regular tetrahedron of spin-1/2. When displacement of spin is considered as a classical variable, the degeneracy is lifted through the distance dependence of exchange coupling, i.e., a kind of Jahn-Teller effect. On the other hand, when displacement is considered as a quantum variable, the degeneracy of the ground spin-state is not lifted although the tetrahedron is distorted by quantum fluctuation caused by magneto-elastic coupling for a component of the normal coordinates of the degenerate mode. We propose a new model for the structural phase transition of vanadium and nickel spinels: the tetragonal distortion is caused by quantum fluctuation and there exists a kind of hidden order with respect to the non-magnetic ground spin-states.",0604397v2 2006-04-21,Muon spin rotation measurements of the vortex state in vanadium: A comparative analysis using iterative and analytical solutions of the Ginzburg-Landau equations,"We report muon spin rotation measurements on a single crystal of the marginal type-II superconductor V. The measured internal magnetic field distributions are modeled assuming solutions of the Ginzburg-Landau (GL) equations for an ideal vortex lattice obtained using (i) an iterative procedure developed by E.H. Brandt, Phys. Rev. Lett. 78, 2208 (1997) and (ii) a variational method. Both models yield qualitatively similar results. The magnetic penetration depth (lambda) and the GL coherence length (xi) determined from the data analysis exhibit strong field dependences, which are attributed to changes in the electronic structure of the vortex lattice. The zero-field extrapolated values of lambda and the GL parameter kappa agree well with values obtained by other experimental techniques that probe the Meissner state.",0604501v1 2006-05-02,Spin Singlet State in Heptamers Emerging in Spinel Oxide AlV$_2$O$_4$,"We present our theoretical results on the electronic state in vanadium spinel oxide AlV$_2$O$_4$. The material is a mixed-valent system with the average valence V$^{2.5+}$, and V cations constitute a frustrated pyrochlore structure. It shows a structural transition at $\sim 700$ K, leading to the formation of seven V-sites clusters -- heptamers. We study the electronic state of the heptamer by explicitly taking account of orbital degree of freedom as well as electron correlations. We show that the ground state of the heptamer for realistic parameters becomes spin-singlet because of strong $\sigma$-type bonding states of $t_{2g}$ orbitals. The temperature dependence of the magnetic susceptibility in experiments is naturally understood by this singlet formation in heptamers. Our results indicate that in AlV$_2$O$_4$ orbital physics is relevant to stabilize a cluster-type singlet state instead of a previously proposed charge-ordered state with valence skipping.",0605046v2 2007-01-12,Enhanced Crystal Field Splitting and Orbital Selective Coherence by Strong Correlations in V_2O_3,"We present a study of the paramagnetic metallic and insulating phases of vanadium sesquioxide by means of the $N$th order muffin-tin orbital implementation of density functional theory combined with dynamical mean-field theory. The transition is shown to be driven by a correlation-induced enhancement of the crystal field splitting within the $t_{2g}$ manifold, which results in a suppression of the hybridization between the $a_{1g}$ and $e_g^{\pi}$ bands. We discuss the changes in the effective quasi-particle band structure caused by the correlations and the corresponding self-energies. At temperatures of about 400 K we find the $a_{1g}$ orbitals to display coherent quasi-particle behavior, while a large imaginary part of the self-energy and broad features in the spectral function indicate that the $e_g^{\pi}$ orbitals are still far above their coherence temperature. The local spectral functions are in excellent agreement with recent bulk sensitive photoemission data. Finally, we also make a prediction for angle-resolved photoemission experiments by calculating momentum-resolved spectral functions.",0701263v1 2007-03-21,DFT investigation of 3d transition metal NMR shielding tensors in diamagnetic systems using the gauge-including projector augmented-wave method,"We present a density functional theory based method for calculating NMR shielding tensors for 3d transition metal nuclei using periodic boundary conditions. Calculations employ the gauge-including projector augmented-wave pseudopotentials method. The effects of ultrasoft pseudopotential and induced approximations on the second-order magnetic response are intensively examined. The reliability and the strength of the approach for 49Ti and 51V nuclei is shown by comparison with traditional quantum chemical methods, using benchmarks of finite organometallic systems. Application to infinite systems is validated through comparison to experimental data for the 51V nucleus in various vanadium oxide based compounds. The successful agreement obtained for isotropic chemical shifts contrasts with full estimation of the shielding tensor eigenvalues, revealing the limitation of pure exchange-correlation functionals compared to their exact-exchange corrected analogues.",0703553v2 2003-10-15,Secondary Electron Yield Measurements of TiN Coating and TiZrV Getter Film,"In the beam pipe of the positron Main Damping Ring (MDR) of the Next Linear Collider (NLC), ionization of residual gases and secondary electron emission give rise to an electron cloud which can cause the loss of the circulating beam. One path to avoid the electron cloud is to ensure that the vacuum wall has low secondary emission yield and, therefore, we need to know the secondary emission yield (SEY) for candidate wall coatings. We report on SEY measurements at SLAC on titanium nitride (TiN) and titanium-zirconium-vanadium (TiZrV) thin sputter-deposited films, as well as describe our experimental setup.",0310071v2 2007-02-06,{\it Ab initio} calculations of forbidden transition probabilities and lifetimes of low-lying states in V$^{4+}$,"Electric quadrupole (E2) and magnetic dipole (M1) transition amplitudes among the low-lying states of quadruply ionized vanadium V$^{4+}$, important in various field of experimental and astrophysics are presented very accurately. Most of these results are reported for the first time in the literature. Relativistic coupled-cluster theory with single, double and leading triple excitations has been employed for these calculations. Estimation of different correlation effects arising through the above formalism have been highlighted by studying core and valence electrons excitations to the excited states. The lifetime of the first excited $D$- state is found to be long.",0702052v2 2007-04-19,Competing itinerant and localized states in strongly correlated BaVS$_3$,"The electronic structure of the quasi-lowdimensional vanadium sulfide \bavs3 is investigated for the different phases above the magnetic ordering temperature. By means of density functional theory and its combination with dynamical-mean field theory, we follow the evolution of the relevant low-energy electronic states on cooling. Hence we go in the metallic regime from the room temperature hexagonal phase to the orthorhombic phase after the first structural transition, and close with the monoclinic insulating phase below the metal-insulator transition. Due to the low symmetry and expected intersite correlations, the latter phase is treated within cellular dynamical mean-field theory. It is generally discussed how the intriguing interplay between band-structure and strong-correlation effects leads to the stabilization of the various electronic phases with decreasing temperature.",0704.2501v1 2007-05-22,Magnetocaloric effect in the frustrated square lattice J1-J2 model,"We investigate the magnetocaloric properties of the two-dimensional frustrated J1-J2 model on a square lattice. This model describes well the magnetic behavior of two classes of quasi-two-dimensional S = 1/2 vanadates, namely the Li2VOXO4 (X = Si, Ge) and AA'VO(PO4)2 (A, A' = Pb, Zn, Sr, Ba) compounds. The magnetocaloric effect (MCE) consists in the adiabatic temperature change upon changing the external magnetic field. In frustrated systems, the MCE can be enhanced close to the saturation field because of massive degeneracies among low lying excitations. We discuss results for the MCE in the two distinct antiferromagnetic regimes of the phase diagram. Numerical finite temperature Lanczos as well as analytical methods based on the spin wave expansion are employed and results are compared. We give explicit values for the saturation fields of the vanadium compounds. We predict that at subcritical fields there is first a (positive) maximum followed by sign change of the MCE, characteristic of all magnetically ordered phases.",0705.3094v2 2007-06-14,Collective Charge Excitations below the Metal-to-Insulator Transition in BaVS3,"The charge response in the barium vanadium sulfide (BaVS3) single crystals is characterized by dc resistivity and low frequency dielectric spectroscopy. A broad relaxation mode in MHz range with huge dielectric constant ~= 10^6 emerges at the metal-to-insulator phase transition TMI ~= 67 K, weakens with lowering temperature and eventually levels off below the magnetic transition Tchi ~= 30 K. The mean relaxation time is thermally activated in a manner similar to the dc resistivity. These features are interpreted as signatures of the collective charge excitations characteristic for the orbital ordering that gradually develops below TMI and stabilizes at long-range scale below Tchi.",0706.2079v4 2007-08-15,Insulator to semiconductor transition and magnetic properties of the one-dimensional S = 1/2 system In_2VO_5,"We report structural, magnetization, electrical resistivity and nuclear- and electron spin resonance data of the complex transition metal oxide In_2VO_5 in which structurally well-defined V-O chains are realized. An itinerant character of the vanadium d-electrons and ferromagnetic correlations, revealed at high temperatures, are contrasted with the insulating behavior and predominantly antiferromagnetic exchange between the localized V^{4+} S = 1/2-magnetic moments which develop below a certain characteristic temperature T* ~ 120 K. Eventually the compound exhibits short-range magnetic order at $T_SRO ~ 20 K. We attribute this crossover occurring around T* to the unusual anisotropic thermal contraction of the lattice which changes significantly the overlap integrals and the character of magnetic intra- and interchain interactions.",0708.2088v1 2007-09-05,Thickness-dependence of the electronic properties in V2O3 thin films,"High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (\rho) follows the equation \rho =\rho_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 \mu\Omega cm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.",0709.0692v1 2007-10-09,Spin ladder compound Pb(0.55)Cd(0.45)V(2)O(5): synthesis and investigation,"The complex oxide Pb(0.55)Cd(0.45)V(2)O(5) was synthesized and investigated by means of X-ray powder diffraction, electron diffraction, magnetic susceptibility measurements and band structure calculations. Its structure is similar to that of MV(2)O(5) compounds (M = Na, Ca) giving rise to a spin system of coupled S=1/2 two-leg ladders. Magnetic susceptibility measurements reveal a spin gap-like behavior with \Delta ~ 270 K and a spin singlet ground state. Band structure calculations suggest Pb(0.55)Cd(0.45)V(2)O(5) to be a system of weakly coupled dimers in perfect agreement with the experimental data. Pb(0.55)Cd(0.45)V(2)O(5) provides an example of the modification of the spin system in layered vanadium oxides by cation substitution. Simple correlations between the cation size, geometrical parameters and exchange integrals for the MV(2)O(5)-type oxides are established and discussed.",0710.1806v1 2008-01-08,Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,"Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.",0801.1171v1 2008-01-09,Frustrated spin-1/2 square lattice in the layered perovskite PbVO(3),"We report on the magnetic properties of the layered perovskite PbVO(3). The results of magnetic susceptibility and specific heat measurements as well as band structure calculations consistently suggest that the S=1/2 square lattice of vanadium atoms in PbVO(3) is strongly frustrated due to next-nearest-neighbor antiferromagnetic interactions. The ratio of next-nearest-neighbor (J(2)) to nearest-neighbor (J(1)) exchange integrals is estimated to be J(2)/J(1)\approx 0.2-0.4. Thus, PbVO(3) is within or close to the critical region of the J(1)-J(2) frustrated square lattice. Supporting this, no sign of long-range magnetic ordering was found down to 1.8 K.",0801.1434v1 2008-03-10,Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions,"The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in amplitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump amplitudes, demonstrating an inherent property of the $VO_2$ films. We report a surprising relation between jump amplitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.",0803.1190v3 2008-06-03,Site symmetry and crystal symmetry: a spherical tensor analysis,"The relation between the properties of a specific crystallographic site and the properties of the full crystal is discussed by using spherical tensors. The concept of spherical tensors is introduced and the way it transforms under the symmetry operations of the site and from site to site is described in detail. The law of spherical tensor coupling is given and illustrated with the example of the electric dipole and quadrupole transitions in x-ray absorption spectroscopy. The main application of the formalism is the reduction of computation time in the calculation of the properties of crystals by band structure methods. The general approach is illustrated by the examples of substitutional chromium in spinel and substitutional vanadium in garnet.",0806.0438v1 2008-06-13,Remote hole-doping of Mott insulators on the nanometer scale,"At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.",0806.2191v1 2008-06-30,Electrostatic modification of infrared response in gated structures based on VO2,"We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.",0806.4826v1 2008-07-11,Magnetic interactions and high-field properties of Ag(2)VOP(2)O(7): frustrated alternating chain close to the dimer limit,"We report on high-field magnetic properties of the silver vanadium phosphate Ag(2)VOP(2)O(7). This compound has a layered crystal structure, but the specific topology of the V-P-O framework gives rise to a one-dimensional spin system, a frustrated alternating chain. Low-field magnetization measurements and band structure calculations show that Ag(2)VOP(2)O(7) is close to the dimer limit with the largest nearest-neighbor interaction of about 30 K. High-field magnetization data reveal the critical fields \mu_0H_{c1} of about 23 T (closing of the spin gap) and \mu_0H_{c2} of about 30 T (saturation by full alignment of the magnetic moments). From H_{c1} to H_{c2} the magnetization increases sharply similar to the system of isolated dimers. Thus, the magnetic frustration in Ag(2)VOP(2)O(7) bears little influence on the high-field properties of this compound.",0807.1849v1 2008-08-09,Electronic transport and specific heat of 1T- VSe2,"The results of low temperature thermoelectric power and the specific heat of 1T-VSe2 (Vanadium diselenide) have been reported along with the electrical resistivity, and Hall coefficient of the compound. The Charge Density Wave (CDW) transition is observed near 110K temperature in all these properties. The Thermoelectric power has been measured from 15K to 300K spanning the incommensurate and commensurate CDW regions. We observed a weak anomaly at the CDW transition for the first time in the specific heat of VSe2. The linear temperature dependence of resistivity and thermoelectric power at higher temperatures suggests a normal metallic behavior and electron-phonon scattering above the CDW transition. The positive thermoelectric power and negative Hall coefficient along with strongly temperature dependent behavior in the CDW phase suggest a mixed conduction related to the strongly hybridized s-p-d bands in this compound.",0808.1332v2 2008-08-24,Effective Hamiltonian of Three-orbital Hubbard Model on Pyrochlore Lattice: Application to LiV_2O_4,"We investigate heavy fermion behaviors in the vanadium spinel LiV_2O_4. We start from a three-orbital Hubbard model on the pyrochlore lattice and derive its low-energy effective Hamiltonian by an approach of real-space renormalization group type. One important tetrahedron configuration in the rochlore lattice has a three-fold orbital degeneracy and spin S=1, and correspondingly, the effective Hamiltonian has spin and orbital exchange interactions of Kugel-Khomskii type as well as correlated electron hoppings. Analyzing the effective Hamiltonian, we find that ferromagnetic double exchange processes compete with antiferromagnetic superexchange processes and various spin and orbital exchange processes are competing to each other. These results suggest the absence of phase transition in spin and orbital spaces down to very low temperatures and their large fluctuations in the low-energy sector, which are key issues for understanding the heavy fermion behavior in LiV_2O_4.",0808.3250v1 2008-12-09,Magnetic Structure and Interactions in the Quasi-1D Antiferromagnet CaV$_2$O$_4$,"CaV$_2$O$_4$ is a spin-1 antiferromagnet, where the magnetic vanadium ions are arranged on quasi-one-dimensional (1D) zig-zag chains with potentially frustrated antiferromagnetic exchange interactions. High temperature susceptibility and single-crystal neutron diffraction measurements are used to deduce the non-collinear magnetic structure, dominant exchange interactions and orbital configurations. The results suggest that at high temperatures CaV$_2$O$_4$ behaves as a Haldane chain, but at low temperatures, orbital ordering lifts the frustration and it becomes a spin-1 ladder.",0812.1808v2 2009-02-10,Maximally localized Wannier function within linear combination of pseudo-atomic orbital method: Implementation and applications to transition-metal-benzene complex,"Construction of maximally localized Wannier functions (MLWFs) has been implemented within the linear combination of pseudo-atomic orbital (LCPAO) method. Detailed analysis using MLWFs is applied to three closely related materials, single benzene (Bz) molecule, organometallic Vanadium-Bz infinite chain, and V$_2$Bz$_{3}$ sandwich cluster. Two important results come out from the present analysis: 1) for the infinite chain, the validity of the basic assumption in the mechanism of Kanamori and Terakura for the ferromagnetic (FM) state stability is confirmed; 2) for V$_2$Bz$_3$, an important role played by the difference in the orbital energy between the edge Bzs and the middle Bz is newly revealed: the on-site energy of p$\delta$ states of edge Bzs is higher than that of middle Bz, which further reduces the FM stability of V$_2$Bz$_3$.",0902.1584v1 2009-04-10,Transition of stoichiometricSr2VO3FeAs to a superconducting state at 37.2 K,"The superconductor Sr4V2O6Fe2As2 with transition temperature at 37.2 K has been fabricated. It has a layered structure with the space group of p4/nmm, and with the lattice constants a = 3.9296Aand c = 15.6732A. The observed large diamagnetization signal and zero-resistance demonstrated the bulk superconductivity. The broadening of resistive transition was measured under different magnetic fields leading to the discovery of a rather high upper critical field. The results also suggest a large vortex liquid region which reflects high anisotropy of the system. The Hall effect measurements revealed dominantly electron-like charge carriers in this material. The superconductivity in the present system may be induced by oxygen deficiency or the multiple valence states of vanadium.",0904.1732v5 2009-04-17,Variational study of the antiferromagnetic insulating phase of V2O3 based on Nth order Muffin-Tin-Orbitals,"Motivated by recent results of $N$th order muffin-tin orbital (NMTO) implementation of the density functional theory (DFT), we re-examine low-temperature ground-state properties of the anti-ferromagnetic insulating phase of vanadium sesquioxide V$_2$O$_3$. The hopping matrix elements obtained by the NMTO-downfolding procedure differ significantly from those previously obtained in electronic structure calculations and imply that the in-plane hopping integrals are as important as the out-of-plane ones. We use the NMTO hopping matrix elements as input and perform a variational study of the ground state. We show that the formation of stable molecules throughout the crystal is not favorable in this case and that the experimentally observed magnetic structure can still be obtained in the atomic variational regime. However the resulting ground state (two $t_{2g}$ electrons occupying the degenerate $e_g$ doublet) is in contrast with many well established experimental observations. We discuss the implications of this finding in the light of the non-local electronic correlations certainly present in this compound.",0904.2757v1 2009-04-22,Optical properties of correlated materials -- Generalized Peierls approach and its application to VO2,"The aim of the present paper is to present a versatile scheme for the computation of optical properties of solids, with particular emphasis on realistic many-body calculations for correlated materials. Geared at the use with localized basis sets, we extend the commonly known lattice ""Peierls substitution"" approach to the case of multi-atomic unit cells. We show in how far this generalization can be deployed as an approximation to the full Fermi velocity matrix elements that enter the continuum description of the response of a solid to incident light. We further devise an upfolding scheme to incorporate optical transitions, that involve high energy orbitals that had been downfolded in the underlying many-body calculation of the electronic structure. As an application of the scheme, we present results on a material of longstanding interest, vanadium dioxide, VO2. Using dynamical mean-field data of both, the metallic and the insulating phase, we calculate the corresponding optical conductivities, elucidate optical transitions and find good agreement with experimental results.",0904.3388v1 2009-05-28,Large-J approach to strongly coupled spin-orbital systems,"We present a novel approach to study the ground state and elementary excitations in compounds where spins and orbitals are entangled by on-site relativistic spin-orbit interaction. The appropriate degrees of freedom are localized states with an effective angular momentum J. We generalize J to arbitrary large values while maintaining the delicate spin-orbital entanglement. After projecting the inter-site exchange interaction to the manifold of effective spins, a systematic 1/J expansion of the effective Hamiltonian is realized using the Holstein-Primakoff transformation. Applications to representative compounds Sr2IrO4 and particularly vanadium spinels AV2O4 are discussed.",0905.4728v3 2009-06-24,Detection of sub-lattice magnetism in sigma-phase Fe-V compounds by zero-field NMR,"The first successful measurements of a sub-lattice magnetism with 51V NMR techniques in the sigma-phase Fe(100-x)Vx alloys with x = 34.4, 39.9 and 47.9 are reported. Vanadium atoms present on all five crystallographic sites are magnetic. Their magnetic properties are characteristic of a given site, which strongly depend on the composition. The strongest magnetism exhibit sites A and the weakest one sites D. The estimated average magnetic moment per V atom decreases from 0.36 muB for x = 34.4 to 0.20 muB for x = 47.9. The magnetism revealed at V atoms is linearly correlated with the magnetic moment of Fe atoms, which implies that the former is induced by the latter.",0906.4458v2 2009-07-31,Two inequivalent sublattices and orbital ordering in MnV2O4 studied by 51V NMR,"We report detailed 51V NMR spectra in a single crystal of MnV2O4. The vanadium spectrum reveals two peaks in the orbitally ordered state, which arise from different internal hyperfine fields at two different V sublattices. These internal fields evolve smoothly with externally applied field, and show no change in structure that would suggest a change of the orbital ordering. The result is consistent with the orbital ordering model recently proposed by Sarkar et al. [Phys. Rev. Lett. 102, 216405 (2009)] in which the same orbital that is a mixture of t_2g orbitals rotates by about 45$^\circ$ alternately within and between orbital chains in the I4_1/a tetragonal space group.",0907.5574v2 2009-08-24,The two-dimensional frustrated Heisenberg model on the orthorhombic lattice,"We discuss new high-field magnetization data recently obtained by Tsirlin et al. for layered vanadium phosphates in the framework of the square-lattice model. Our predictions for the saturation fields compare exceptionally well to the experimental findings, and the strong bending of the curves below saturation agrees very well with the experimental field dependence. Furthermore we discuss the remarkably good agreement of the frustrated Heisenberg model on the square lattice in spite of the fact that the compounds described with this model actually have a lower crystallographic symmetry. We present results from our calculations on the thermodynamics of the model on the orthorhombic (i.e., rectangular) lattice, in particular the temperature dependence of the magnetic susceptibility. This analysis also sheds light on the discussion of magnetic frustration and anisotropy of a class of iron pnictide parent compounds, where several alternative suggestions for the magnetic exchange models were proposed.",0908.3442v1 2009-09-03,Spin correlations and exchange in square lattice frustrated ferromagnets,"The J1-J2 model on a square lattice exhibits a rich variety of different forms of magnetic order that depend sensitively on the ratio of exchange constants J2/J1. We use bulk magnetometry and polarized neutron scattering to determine J1 and J2 unambiguously for two materials in a new family of vanadium phosphates, Pb2VO(PO4)2 and SrZnVO(PO4)2, and we find that they have ferromagnetic J1. The ordered moment in the collinear antiferromagnetic ground state is reduced, and the diffuse magnetic scattering is enhanced, as the predicted bond-nematic region of the phase diagram is approached.",0909.0702v1 2009-09-24,"Magnetic, Thermal, and Transport Properties of the Mixed Valent Vanadium Oxides LuV4O8 and YV4O8","LV4O8 (L = Yb, Y, Lu) compounds are reported to crystallize in a structure similar to that of the orthorhombic CaFe2O4 structure-type, and contain four inequivalent V sites arranged in zigzag chains. We confirm the structure and report the magnetic, thermal, and transport properties of polycrystalline YV4O8 and LuV4O8. A first-order like phase transition is observed at 50 K in both YV4O8 and LuV4O8. The symmetry remains the same with the lattice parameters changing discontinously. The structural transition in YV4O8 leads to partial dimerization of the V atoms resulting in a sudden sharp drop in the magnetic susceptibility. The V spins that do not form dimers order in a canted antiferromagnetic state. The magnetic susceptibility of LuV4O8 shows a sharp peak at ~ 50 K. The magnetic entropies calculated from heat capacity versus temperature measurements indicate bulk magnetic transitions below 90 K for both YV4O8 and LuV4O8.",0909.4572v2 2009-10-08,Structural and transport properties of Sr2VO{3-delta}FeAs superconductors with different oxygen deficiencies,"Sr2VO{3-delta}FeAs superconductors with different oxygen deficiencies have been successfully fabricated. It is found that the superconducting transition temperature drops down monotonically with the increase of oxygen deficiency. The diminishing of superconductivity is accompanied by the enhancement of residual resistivity, indicating an unraveled scattering effect induced by the oxygen deficiency. The highest superconducting transition temperature at about 40 K is achieved near the stoichiometrical sample Sr$_2$VO$_{3}$FeAs. Surprisingly, the X-ray photoelectron spectroscopy (XPS) shows that the vanadium has a ""5+"" valence state in the samples. The Hall effect measurements reveal that the density of charge carriers (electron-like here) varies qualitatively with the increase of oxygen deficiency. Magnetotransport measurements show that the superconducting transition changes from one-step-like shape at low fields to two-step-like one at high fields, indicating a high anisotropy.",0910.1537v2 2009-12-06,Quantum Griffiths Phase in the weak itinerant ferromagnetic alloy Ni$_{1-x}$V$_x$,"We present magnetization ($M$) data of the $d$-metal alloy Ni$_{1-x}$V$_x$ at vanadium concentrations close to $x_c \approx 11.4%$ where the onset of long-range ferromagnetic (FM) order is suppressed to zero temperature. Above $x_c$, the temperature ($T$) and magnetic field ($H$) dependencies of the magnetization are best described by simple nonuniversal power laws. The exponents of $M/H \sim T^{-\gamma}$ and $M \sim H^\alpha$ are related by $1-\gamma=\alpha$ for wide temperature ($10K < T \leq 300K$) and field ($H \leq 5T$) ranges. $\gamma$ is strongly $x$ dependent, decreasing from 1 at $x\approx x_c$ to $\gamma < 0.1$ for x=15%. This behavior is not compatible with either classical or quantum critical behavior in a clean 3D FM. Instead it closely follows the predictions for a quantum Griffiths phase associated with a quantum phase transition in a disordered metal. Deviations at the lowest temperatures hint at a freezing of large clusters and the onset of a cluster glass phase, presumably due to RKKY interactions in this alloy.",0912.1146v2 2010-03-19,Non-congruence of thermally driven structural and electronic transition in VO2,"Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to ferromagnetic metal linked to a structural Jahn-Teller distortion3. Vanadium dioxide (VO2) likewise exhibits an insulator-to-metal transition (IMT) at ~67oC with abrupt changes in transport and optical properties and coupled to a structural phase transition (SPT) from monoclinic to tetragonal4. The IMT and SPT hystereses are signatures of first-order phase transition tracking the nucleation to stabilization of a new phase. Here we have for the first time measured independently the IMT and SPT hystereses in epitaxial VO2 films, and shown that the hystereses are not congruent. From the measured volume fractions of the two phases in the region of strong correlation, we have computed the evolving dielectric function under an effective-medium approximation. But the computed dielectric functions could not reproduce the measured IMT, implying that there is a strongly correlated metallic phase that is not in the stable rutile structure, consistent with Qazilbash et al5. Search for a corresponding macroscopic structural intermediate also yielded negative result.",1003.3876v1 2010-05-06,Effects of strain on the electronic structure of VO_2,"We present cluster-DMFT (CTQMC) calculations based on a downfolded tight-binding model in order to study the electronic structure of vanadium dioxide (VO_2) both in the low-temperature (M_1) and high-temperature (rutile) phases. Motivated by the recent efforts directed towards tuning the physical properties of VO_2 by depositing films on different supporting surfaces of different orientations we performed calculations for different geometries for both phases. In order to investigate the effects of the different growing geometries we applied both contraction and expansion for the lattice parameter along the rutile c-axis in the 3-dimensional translationally invariant systems miming the real situation. Our main focus is to identify the mechanisms governing the formation of the gap characterizing the M_1 phase and its dependence on strain. We found that the increase of the band-width with compression along the axis corresponding to the rutile c-axis is more important than the Peierls bonding-antibonding splitting.",1005.0886v1 2010-06-12,Role of van der Waals bonding in layered oxide: Bulk vanadium pentoxide,"Sparse matter is characterized by regions with low electron density and its understanding calls for methods to accurately calculate both the van der Waals (vdW) interactions and other bonding. Here we present a first-principles density functional theory (DFT) study of a layered oxide (V2O5) bulk structure which shows charge voids in between the layers and we highlight the role of the vdW forces in building up material cohesion. The result of previous first-principles studies involving semilocal approximations to the exchange-correlation functional in DFT gave results in good agreement with experiments for the two in-plane lattice parameters of the unit cell but overestimated the parameter for the stacking direction. To recover the third parameter we include the nonlocal (dispersive) vdW interactions through the vdW-DF method [Dion et al., Phys. Rev. Lett. 92, 246401 (2004)] testing also various choices of exchange flavors. We find that the transferable first-principle vdW-DF calculations stabilizes the bulk structure. The vdW-DF method gives results in fairly good agreement with experiments for all three lattice parameters.",1006.2494v1 2010-06-19,High resolution spectroscopic study of red clump stars in the Galaxy: iron group elements,"The main atmospheric parameters and abundances of the iron group elements (vanadium, chromium, iron, cobalt and nickel) are determined for 62 red giant ""clump"" stars revealed in the Galactic field by the Hipparcos orbiting observatory. The stars form a homogeneous sample with the mean value of temperature T=4750 +- 160K, of surface gravity log g = 2.41 +- 0.26 and the mean value of metallicity [Fe/H] = -0.04 +- 0.15 dex. A Gaussian fit to the [Fe/H] distribution produces the mean [Fe/H] = -0.01 dex and dispersion of [Fe/H] = 0.08 dex. The near-solar metallicity and small dispersion of [Fe/H] of clump stars of the Galaxy obtained in this work confirm the theoretical model of the Hipparcos clump by Girardi & Salaris (2001). This suggests that nearby clump stars are (in the mean) relatively young objects, reflecting mainly the near-solar metallicities developed in the local disk during the last few Gyrs of its history. We find iron group element to iron abundance ratios in clump giants to be close to solar.",1006.3857v1 2010-06-21,Signatures of a quantum Griffiths phase in a d-metal alloy close to its ferromagnetic quantum critical point,"We report magnetization ($M$) measurements close to the ferromagnetic quantum phase transition of the d-metal alloy Ni$_{1-x}$V$_x$ at a vanadium concentration of $x_c \approx 11.4 %$. In the diluted regime ($x>x_c$), the temperature ($T$) and magnetic field ($H$) dependencies of the magnetization are characterized by nonuniversal power laws and display $H/T$ scaling in a wide temperature and field range. The exponents vary strongly with $x$ and follow the predictions of a quantum Griffiths phase. We also discuss the deviations and limits of the quantum Griffiths phase as well as the phase boundaries due to bulk and cluster physics.",1006.4094v2 2010-08-16,Suppression of superconductivity by V-doping and possible magnetic order in Sr2VO3FeAs,"Superconductivity at 33 K in Sr2VO3FeAs is completely suppressed by small amounts of V-doping in Sr2VO3[Fe0.93(+/-0.01)V0.07(+/-0.01)]As. The crystal structures and exact stoichiometries are determined by combined neutron- and x-ray powder diffraction. Sr2VO3FeAs is shown to be very sensitive to Fe/V mixing, which interferes with or even suppresses superconductivity. This inhomogeneity may be intrinsic and explains scattered reports regarding Tc and reduced superconducting phase fractions in Sr2VO3FeAs. Neutron diffraction data collected at 4 K indicates incommensurate mag- netic ordering of the V-sublattice with a propagation vector q = (0,0,0.306). This suggests strongly correlated vanadium, which does not contribute significantly to the Fermi surface of Sr2VO3FeAs.",1008.2687v2 2010-09-02,Spin and Orbital Order of the Vanadium Spinel MgV2O4,"We present a unique study of the frustrated spinel MgV2O4 which possesses highly coupled spin, lattice and orbital degrees of freedom. Using large single-crystal and powder samples, we find a distortion from spinel at room temperature (space group F-43m) which allows for a greater trigonal distortion of the VO6 octahedra and a low temperature space group (I-4m2) that maintains the mirror plane symmetry. The magnetic structure that develops below 42 K consists of antiferromagnetic chains with a strongly reduced moment while inelastic neutron scattering reveals one-dimensional behavior and a single band of excitations. The implications of these results are discussed in terms of various orbital ordering scenarios. We conclude that although spin-orbit coupling must be significant to maintain the mirror plane symmetry, the trigonal distortion is large enough to mix the 3d levels leading to a wave function of mixed real and complex orbitals.",1009.0429v2 2010-12-01,Persistence of magnons in a site-diluted dimerized frustrated antiferromagnet,"We present inelastic neutron scattering and thermodynamic measurements characterizing the magnetic excitations in a disordered non-magnetic substituted spin-liquid antiferromagnet. The parent compound Ba3Mn2O8 is a dimerized, quasi-two-dimensional geometrically frustrated quantum disordered antiferromagnet. We substitute this compound with non-magnetic vanadium for the S = 1 manganese atoms, Ba3(Mn1-xVx)2O8, and find that the singlet-triplet excitations which dominate the spectrum of the parent compound persist for the full range of substitution examined, x = 0.02 to 0.3. We also observe additional low-energy magnetic fluctuations which are enhanced at the greatest substitution values. These excitations may be a precursor to a low-temperature random singlet phase which may exist in Ba3(Mn1-xVx)2O8",1012.0099v1 2011-03-29,Reconfigurable Gradient Index using VO2 Memory Metamaterials,"We demonstrate tuning of a metamaterial device that incorporates a form of spatial gradient control. Electrical tuning of the metamaterial is achieved through a vanadium dioxide layer which interacts with an array of split ring resonators. We achieved a spatial gradient in the magnitude of permittivity, writeable using a single transient electrical pulse. This induced gradient in our device is observed on spatial sc ales on the order of one wavelength at 1 THz. Thus, we show the viability of elements for use in future devices with potential applications in beamforming and communications",1103.5729v2 2011-04-12,VO2: A Novel View from Band Theory,"New calculations for vanadium dioxide, one of the most controversely discussed materials for decades, reveal that band theory as based on density functional theory is well capable of correctly describing the electronic and magnetic properties of the metallic as well as both the insulating M1 and M2 phases. Considerable progress in the understanding of the physics of VO2 is achieved by the use of the recently developed hybrid functionals, which include part of the electron-electron interaction exactly and thereby improve on the weaknesses of semilocal exchange functionals as provided by the local density and generalized gradient approximations. Much better agreement with photoemission data as compared to previous calculations is found and a consistent description of the rutile-type early transition-metal dioxides is achieved.",1104.2214v1 2011-04-15,Ultrafast Insulator-Metal Phase Transition in VO2 Studied by Multiterahertz Spectroscopy,"The ultrafast photoinduced insulator-metal transition in VO2 is studied at different temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved mid-infrared response allows us to trace separately the dynamics of lattice and electronic degrees of freedom with a time resolution of 40 fs. The critical fluence of the optical pump pulse which drives the system into a long-lived metallic state is found to increase with decreasing temperature. Under all measurement conditions we observe a modulation of the eigenfrequencies of the optical phonon modes induced by their anharmonic coupling to the coherent wave packet motion of V-V dimers at 6.1 THz. Furthermore, we find a weak quadratic coupling of the electronic response to the coherent dimer oscillation resulting in a modulation of the electronic conductivity at twice the frequency of the wave packet motion. The findings are discussed in the framework of a qualitative model based on an approximation of local photoexcitation of the vanadium dimers from the insulating state.",1104.2984v1 2011-05-06,The interplay between dopants and oxygen vacancies in the magnetism of V-doped TiO2,"Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V4+ species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic order cannot be reached via low-concentration doping in the non-defective oxide. Oxygen vacancies can introduce additional magnetic centres, and we show here that one of the effects of vanadium doping is to reduce the formation energies of these defects. In the presence of both V dopants and O vacancies all the spins tend to align with the same orientation. We conclude that V doping favours the ferromagnetic behaviour of TiO2 not only by introducing spins associated with the dopant centres but also by increasing the concentration of oxygen vacancies with respect to the pure oxide.",1105.1289v1 2011-05-22,Evidence for a capacitor network near the metal insulator transition in VO2 thin films probed by in-plane impedance spectroscopy,"Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator transition (MIT). A non ideal RC behavior was found in our films from room temperature up to 334 K. A decrease of the total capacitance was found in this region, possibly due to interface effects. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately. Around the MIT, an increase of the total capacitance is observed.",1105.4308v1 2011-08-30,Orbital ordering in the geometrically frustrated MgV$_2$O$_4$: \emph{Ab initio} electronic structure calculations,"In the light of recent interesting experimental work on MgV$_2$O$_4$ we employ the density functional theory to investigate the crucial role played by different interaction parameters in deciding its electronic and magnetic properties. The strong Coulomb correlation in presence of antiferromagnetic (AFM) coupling is responsible for the insulating ground state. In the ground state the $d_{xz}$ and $d_{yz}$ orbitals are ordered and intra-chain vanadium ions are antiferromagnetically coupled. The calculation gives small spin-orbit coupling (SOC), which provides a tilt of $\sim11.3^0$ to the magnetic moment from the z-axis. In the presence of weak SOC and strong exchange coupling, the experimentally observed small magnetic moment and low AFM transition temperature appear to arise from spin fluctuation due to activeness of geometrical frustration.",1108.5907v2 2011-09-30,Ab initio computation of d-d excitation energies in low-dimensional Ti and V oxychlorides,"Using a quantum chemical cluster-in-solid computational scheme, we calculate the local d-d excitation energies for two strongly correlated Mott insulators, the oxychlorides TiOCl and VOCl. TiOCl harbors quasi-one-dimensional spin chains made out of S = 1/2 Ti3+ ions while the electronic structure of VOCl displays a more two-dimensional character. We find in both cases that the lowest-energy d-d excitations are within the t2g subshell, starting at 0.34 eV and indicating that orbital degeneracies are significantly lifted. In the vanadium oxychloride, spin triplet to singlet excitations are calculated to be 1 eV higher in energy. For TiOCl, the computed d-level electronic structure and the symmetries of the wavefunctions are in very good agreement with resonant inelastic x-ray scattering results and optical absorption data. For VOCl, future resonant inelastic x-ray scattering experiments will constitute a direct test of the symmetry and energy of about a dozen of different d-d excitations that we predict here.",1109.6797v2 2011-10-09,Anisotropic compression in the high pressure regime of pure and Cr-doped vanadium dioxide,"We present structural studies of V$_{1-x}$Cr$_x$O$_2$ (pure, 0.7% and 2.5% Cr doped) compounds at room temperature in a diamond anvil cell for pressures up to 20 GPa using synchrotron x-ray powder diffraction. All the samples studied show a persistence of the monoclinic $M_1$ symmetry between 4 and 12 GPa. Above 12 GPa, the monoclinic $M_1$ symmetry changes to isostructural $M_x$ phase (space group $P2_1/c$) with a significant anisotropy in lattice compression of the $b$-$c$ plane of the $M_{1}$ phase. This behavior can be reconciled invoking the pressure induced charge-delocalization.",1110.1844v2 2011-11-15,BaVS$_3$ probed by V L edge X-ray absorption spectroscopy,"Polarization dependent vanadium L edge X-ray absorption spectra of BaVS$_3$ single crystals are measured in the four phases of the compound. The difference between signals with the polarization \textbf{E}$\perp$\textbf{c} and \textbf{E}$\parallel$\textbf{c} (linear dichroism) changes with temperature. Besides increasing intensity of one of the maxima, a new structure appears in the pre-edge region below the metal-insulator transition. More careful examination brings to light that the changes start already with pretransitional charge density wave fluctuations. Simple symmetry analysis suggests that the effect is related to rearrangements in $E_{g}$ and $A_{1g}$ states, and is compatible with the formation of four inequivalent V sites along the V-S chain.",1111.3476v1 2012-01-06,Electric-field-driven phase transition in vanadium dioxide,"We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E~6.5\times10^7 Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.",1201.1459v1 2012-01-30,"Exchange constants and spin waves of the orbital ordered, non-collinear spinel MnV$_2$O$_4$","We study the exchange constants of MnV$_2$O$_4$ using magnetic force theorem and local spin density approximation of density functional theory supplemented with a correction due to on-site Hubbard interaction U. We obtain the exchanges for three different orbital orderings of the Vanadium atoms of the spinel. We then map the exchange constants to a Heisenberg model with single-ion anisotropy and solve for the spin-wave excitations in the non-collinear, low temperature phase of the spinel. The single-ion anisotropy parameters are obtained from an atomic multiplet exact-diagonalization program, taking into effect the crystal-field splitting and the spin-orbit coupling. We find good agreement between the spin waves of one of our orbital ordered setups with previously reported experimental spin waves as determined by neutron scattering. We can therefore determine the correct orbital order from various proposals that exist in the literature.",1201.6375v2 2012-02-09,Interlayer magnetic frustration driven quantum spin disorder in honeycomb compound In$_{3}$Cu$_{2}$VO$_{9}$,"We present electronic and magnetic properties of a honeycomb compound In$_{3}$Cu$_{2}$VO$_{9}$ in this paper. We find that the parent phase is a charge transfer insulator with an energy gap of about 1.5 eV. Singly occupied d$_{3z^{2}-r^{2}}$ electrons of copper ions contribute an $S$ = 1/2 spin, while vanadium ions show nonmagnetism. Oxygen 2$p$ orbitals hybridizing with a small fraction of Cu 3$d$ orbitals dominate the density of states near $E_{F}$. The planar nearest-neighbor, next-nearest-neighbor and interplane superexchange couplings of Cu spins are $J_{1}$ $\approx$ 16.2 meV, $J_{2}$ $\approx$ 0.3 meV and $J_{z}$ $\approx$ 1.2 meV, suggesting a low-dimensional antiferromagnet \cite{Sondhi10}. We propose that the magnetic frustration along the c-axis leads to a quantum spin disorder in In$_{3}$Cu$_{2}$VO$_{9}$, in accordance with the recent experiments. {abstract}",1202.1861v3 2012-03-11,Calculations of the thermodynamic and kinetic properties of LiV3O8,"The phase behavior and kinetic pathways of Li1+xV3O8 are investigated by means of density functional theory (DFT) and a cluster expansion (CE) methodology that approximates the system Hamiltonian in order to identify the lowest energy configurations. Although DFT calculations predict the correct ground state for a given composition, both GGA and LDA fail to obtain phase stability consistent with experiment due to strongly localized vanadium 3d electrons. A DFT+U methodology recovers the correct phase stability for an optimized U value of 3.0eV. GGA+U calculations with this value of U predict electronic structures that qualitatively agree with experiment. The resulting calculations indicate solid solution behavior from LiV3O8 to Li2.5V3O8 and two-phase coexistence between Li2.5V3O8 and Li4V3O8. Analysis of the lithiation sequence from LiV3O8 to Li2.5V3O8 reveals the mechanism by which lithium intercalation proceeds in this material. Calculations of lithium migration energies for different lithium concentrations and configurations provides insight into the relevant diffusion pathways and their relationship to structural properties.",1203.2314v1 2012-04-11,Frustrated magnets and quantum paramagnetic phases at finite temperature,"We develop a general framework, which combines exact diagonalization in small clusters with a density matrix variational principle, to study frustrated magnets at finite temperature. This thermodynamic hierarchical mean-field technique is used to determine the phase diagram and magnetization process of the three-dimensional spin-1/2 $J_1$-$J_2$ antiferromagnet on a stacked square lattice. Its non-magnetic phase exhibits a thermal crossover from a quantum to a classical paramagnet at a temperature $T=T_0$ which can be extracted from thermodynamic measurements. At low temperature an applied magnetic field stabilizes, through order-by-disorder, a variety of phases with non-trivial spin textures and a magnetization plateau at half-saturation which continuously disappears at $T\sim T_0$. Our results are relevant for frustrated vanadium oxides.",1204.2559v2 2012-05-31,Effect of spin-orbit coupling on magnetic and orbital order in MgV$_2$O$_4$,"Recent measurements on MgV$_2$O$_4$ single crystal have reignited the debate on the role of spin-orbit (SO) coupling in dictating the orbital order in Vanadium spinel systems. Density functional theory calculations were performed using the full-potential linearized augmented-plane-wave method within the local spin density approximation (LSDA), Coulomb correlated LSDA+U, and with SO interaction (LSDA+U+SO) to study the magnetic and orbital ordering in low temperature phase of MgV$_2$O$_4$. It is observed that the spin-orbit coupling in the experimentally observed antiferromagnetic phase, affects the orbital order differently in alternate V-atom chains along c-axis. This observation is found to be consistent with the experimental prediction that the effect of spin-orbit coupling is intermediate between that in case of ZnV$_2$O$_4$ and MnV$_2$O$_4$.",1205.6950v1 2012-08-07,An x-ray diffraction study of the temperature-induced structural phase transitions in SmVO3,"Through powder x-ray diffraction we have investigated the structural behavior of SmVO3, in which orbital and magnetic degrees of freedom are believed to be closely coupled to the crystal lattice. We have found, contrary to previous reports, that SmVO3 exists in a single, monoclinic, phase below 200 K. The associated crystallographic distortion is then stabilized through the magnetostriction that occurs below 134 K. The crystal structure has been refined using synchrotron x-ray powder diffraction data measured throughout the structural phase diagram, showing a substantial Jahn-Teller distortion of the VO6 octahedra in the monoclinic phase, compatible with the expected G-type orbital order. Changes in the vanadium ion crystal field due to the structural and magnetic transitions have then been probed by resonant x-ray diffraction.",1208.1485v1 2012-08-16,Terahertz nano antenna enabled early transition in VO2,"We study terahertz transmission through nano-patterned vanadium dioxide thin film. It is found that the patterning allows the lowering of the apparent transition temperature. For the case of the smallest width nano antennas, the transition temperature is lower by as many as ten degrees relative to the bare film, so that the nano patterned hysteresis curves completely separate themselves from their bare film counterparts. This early transition comes from the one order of magnitude enhanced effective dielectric constants by nano antennas. This phenomenon opens up the possibility of transition temperature engineering.",1208.3269v1 2012-09-27,Density functional theory study of rutile VO2 surfaces,"We present the results of a density functional theory (DFT) investigation of the surfaces of rutile-like vanadium dioxide, VO2(R). We calculate the surface energies of low Miller index planes, and find that the most stable surface orientation is the (110). The equilibrium morphology of a VO2(R) particle has an acicular shape, laterally confined by (110) planes and topped by (011) planes. The redox properties of the (110) surface are investigated by calculating the relative surface free energies of the non-stoichiometric compositions as a function of oxygen chemical potential. It is found that the VO2(110) surface is oxidized with respect to the stoichiometric composition, not only at ambient conditions but also at the more reducing conditions under which bulk VO2 is stable in comparison with bulk V2O5. The adsorbed oxygen forms surface vanadyl species much more favorably than surface peroxo species.",1209.6177v1 2012-10-16,Thermodynamics of the two-dimensional frustrated J1-J2 Heisenberg ferromagnet in the collinear stripe regime: Susceptibility and correlation length,"We calculate the temperature dependence of the correlation length xi and the uniform susceptibility chi_0 of the frustrated J1-J2 square-lattice Heisenberg ferromagnet in the collinear stripe phase using Green-function technique. The height chi_{max} and the position T(chi_{max}) of the maximum in the chi_0(T) curve exhibit a characteristic dependence on the frustration parameter J2/|J1|, which is well described by power laws, chi_{max}=a(J2-J2^c)^{-nu} and T(chi_{max})=b(J_2-J_2^c), where J2^c = 0.4 and nu is of the order of unity.The correlation length diverges at low temperatures as xi \propto e^{A/T}, where A increases with growing J2/|J1|. We also compare our results with recent measurements on layered vanadium phosphates and find reasonable agreement.",1210.4414v2 2012-10-29,Substrate Effect on Optical Properties of Insulator-Metal Transition in VO2 Thin Films,"In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) compared a film grown on sapphire (Tc=68C). We also investigated differences in the detected Raman signal for different wavelengths and polarizations of the excitation laser. We found that for either substrate, a longer wavelength (in our case 785 nm) yielded the clearest VO2 Raman spectra, with no polarization dependence.",1210.7746v2 2012-11-12,An orbital-selective spin liquid in a frustrated heavy fermion spinel LiV$_2$O$_4$,"The pronounced enhancement of the effective mass is the primary phenomenon associated with strongly correlated electrons. In the presence of local moments, the large effective mass is thought to arise from Kondo coupling, the interaction between itinerant and localised electrons. However, in d electron systems, the origin is not clear because of the competing Hund's rule coupling. Here we experimentally address the microscopic origin for the heaviest d fermion in a vanadium spinel LiV2O4 having geometrical frustration. Utilising orbital-selective 51V NMR, we elucidate the orbital-dependent local moment that exhibits no long-range magnetic order despite persistent antiferromagnetic correlations. A frustrated spin liquid, Hund-coupled to itinerant electrons, has a crucial role in forming heavy fermions with large residual entropy. Our method is important for the microscopic observation of the orbital-selective localisation in a wide range of materials including iron pnictides, cobaltates, manganites, and ruthnates.",1211.2844v1 2013-01-17,Quantum anomalous Hall effect and tunable topological states in 3d transition metals doped silicene,"We engineer quantum anomalous Hall effect in silicene via doping 3d transition metals. We show that there exists a stable quantum anomalous Hall effect in Vanadium doped silicene using both analytical model and Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our finding provides new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states.",1301.4081v4 2013-02-13,Nucleosynthesis in the gamma-ray burst accretion disks and associated outflows,"We investigate nucleosynthesis inside the gamma-ray burst (GRB) accretion disks formed by the Type II collapsars and outflows launched from these disks. We deal with accretion disks having relatively low accretion rates: 0.001 M_sun s^{-1} <~ Mdot <~ 0.01 M_sun s^{-1} and hence they are predominantly advection dominated. We report the synthesis of several unusual nuclei like 31P, 39K, 43Sc, 35Cl and various isotopes of titanium, vanadium, chromium, manganese and copper in the disk. We also confirm that isotopes of iron, cobalt, nickel, argon, calcium, sulphur and silicon get synthesized in the disk, as shown by previous authors. Much of these heavy elements thus synthesized are ejected from the disk and survive in the outflows. Indeed, emission lines of many of these heavy elements have been observed in the X-ray afterglows of several GRBs.",1302.3067v1 2013-02-20,Finite-temperature Gutzwiller approximation and the phase diagram of a toy-model for V2O3,"We exploit exact inequalities that refer to the entropy of a distribution to derive a simple variational principle at finite temperature for trial density matrices of Gutzwiller and Jastrow type. We use the result to extend at finite temperature the Gutzwiller approximation, which we apply to study a two-orbital model that we believe captures some essential features of V$_2$O$_3$. We indeed find that the phase diagram of the model bears many similarities to that of real vanadium sesquioxide. In addition, we show that in a Bethe lattice, where the finite temperature Gutzwiller approximation provides a rigorous upper bound of the actual free energy, the results compare well with the exact phase diagram obtained by the dynamical mean field theory.",1302.4927v1 2013-04-09,Exchange randomness and spin dynamics in the frustrated magnetic Keplerate {W72V30},"The magnetic properties and spin dynamics of the spin frustrated polyoxometalate {W72V30}, where 30 V^{4+} ions (s = 1/2) occupy the sites of an icosidodecahedron, have been investigated by low temperature magnetization, magnetic susceptibility, proton and vanadium nuclear magnetic resonance, and theoretical studies. The field-dependent magnetization at 0.5 K increases monotonically up to 50 T without any sign of staircase behavior. This low-temperature behavior cannot be explained by a Heisenberg model based on a single value of the nearest-neighbor exchange coupling. We analyze this behavior upon assuming a rather broad distribution of nearest-neighbor exchange interactions. Slow spin dynamics of {W72V30} at low temperatures is observed from the magnetic field and temperature dependence of nuclear spin-lattice relaxation rate 1/T_1 measurements.",1304.2603v1 2013-04-22,Structural and magnetic properties in the quantum S=1/2 dimer systems Ba3(Cr1-xVx)2O8 with site disorder,"We report a comprehensive study of dc susceptibility, specific heat, neutron diffraction, and inelastic neutron scattering measurements on polycrystalline Ba3(Cr1-xVx)2O8 samples, where x=0, 0.06, 0.15, and 0.53. A Jahn-Teller structure transition occurs for x=0, 0.06, and 0.15 samples and the transition temperature is reduced upon vanadium substitution from 70(2) K at x=0 to 60(2) K at x=0.06 and 0.15. The structure becomes less distorted as x increases and such transition disappears at x=0.53. The observed magnetic excitation spectrum indicates that the singlet ground state remains unaltered and spin gap energy \Delta=1.3(1) meV is identical within the instrument resolution for all x. In addition, the dispersion bandwidth W decreases with increase of x. At x=0.53, W is reduced to 1.4(1) meV from 2.0(1) meV at x=0.",1304.6069v2 2013-06-10,On the feasibility to study inverse proximity effect in a single S/F bilayer by Polarized Neutron Reflectometry,"Here we report on a feasibility study aiming to explore the potential of Polarized Neutron Reflectometry (PNR) for detecting the inverse proximity effect in a single superconducting/ferromagnetic bilayer. Experiments, conducted on the V(40nm)/Fe(1nm) S/F bilayer, have shown that experimental spin asymmetry measured at T = 0.5TC is shifted towards higher Q values compared to the curve measured at T = 1.5TC. Such a shift can be described by the appearance in superconducting vanadium of magnetic sub-layer with thickness of 7 nm and magnetization of +0.8 kG.",1306.2173v2 2013-06-17,Direct in-situ observation of structural transition driven actuation in VO2 utilizing electron transparent cantilevers,"Direct imaging and quantification of actuation in nanostructures that undergo structural phase transitions could advance our understanding of collective phenomena in the solid state. Here, we demonstrate visualization of structural phase transition induced actuation in a model correlated insulator vanadium dioxide by in-situ Fresnel contrast imaging of electron transparent cantilevers. We quantify abrupt, reversible cantilever motion occurring due to the stress relaxation across the structural transition from monoclinic to tetragonal phase with increasing temperature. Deflections measured in such nanoscale cantilevers can be directly correlated with macroscopic stress measurements by wafer curvature studies as well as temperature dependent electrical conduction allowing one to interrogate lattice dynamics across length scales.",1306.3931v1 2013-07-08,Weak magnetism and the Mott-state of vanadium in superconducting Sr2VO3FeAs,"We report neutron scattering data and DFT calculations of the stoichiometric iron-arsenide superconductor Sr2VO3FeAs. Rietveld refinements of neutron powder patterns confirm the ideal composition without oxygen deficiencies. Experiments with polarized neutrons prove weak magnetic ordering in the V-sublattice of Sr2VO3FeAs at ~ 45 K with a probable propagation vector q = (1/8,1/8,0). The ordered moment of ~ 0.1 muB is too small to remove the V-3d bands from the Fermi level by magnetic exchange splitting, and much smaller than predicted from a recent LDA+U study. By using DFT calculations with a GGA+EECE functional we recover the typical quasi-nested Fermi-surface even without magnetic moment. From this we suggest that the V-atoms are in a Mott-state where the electronic correlations are dominated by on-site Coulomb-repulsion which shifts the V-3d states away from the Fermi energy. Our results are consistent with photoemission data and clearly reveal that Sr2VO3FeAs is a typical iron-arsenide superconductor with quasi-nested hole- and electron-like Fermi surface sheets, and constitutes no new paradigm. We suggest that intrinsic electron-doping through V3+/V4+ mixed valence is responsible for the absence of SDW ordering.",1307.2138v1 2013-07-15,Temperature Gated Thermal Rectifier,"Heat flow control is essential for widespread applications of heating, cooling, energy conversion and utilization. Here we demonstrate the first observation of temperature-gated thermal rectification in vanadium dioxide beams, in which an environment temperature actively modulates asymmetric heat flow. In this three terminal device, there are two switchable states, which can be accessed by global heating: Rectifier state and Resistor state. In the Rectifier state, up to 28% thermal rectification is observed. In the Resistor state, the thermal rectification is significantly suppressed (below 4%). This temperature-gated rectifier can have substantial implications ranging from autonomous thermal management of micro/nanoscale devices to thermal energy conversion and storage.",1307.4069v2 2013-09-06,Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films,"Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic, and the electrical resistivity followed the T^2 law corresponding to a Fermi liquid system. In the insulating region of x < 0.67, the temperature dependence of electrical resistivity for the x = 0.5 and 0.33 films can be scaled with the variable range hopping model. The possible mechanisms behind the observed MIT were discussed, including the effects of electron correlation, lattice distortion and Anderson localization.",1309.1745v1 2013-10-22,Nucleosynthesis inside accretion disks and outflows formed during core collapse of massive stars,"We investigate nucleosynthesis inside the gamma-ray burst (GRB) accretion disks and in the outflows launched from these disks mainly in the context of Type II collapsars. We report the synthesis of several unusual nuclei like 31P, 39K, 43Sc, 35Cl and various isotopes of titanium, vanadium, chromium, manganese and copper in the disk. We also confirm the presence of iron-group and alpha-elements in the disk, as shown by previous authors. Much of these heavy elements thus synthesized are ejected from the disk and survive in the outflows. While emission lines of several of these elements have been observed in the X-ray afterglows of GRBs by BeppoSAX, Chandra, XMM-Newton etc., Swift seems to have not found these lines yet.",1310.5911v1 2013-10-30,Novel Rattling of K Atoms in Aluminium-Doped Defect Pyrochlore Tungstate,"Rattling dynamics have been identified as fundamental to superconductivity in defect pyrochlore osmates and aluminium vanadium intermetallics, as well as low thermal conductivity in clathrates and filled skutterudites. Combining inelastic neutron scattering (INS) measurements and ab initio molecular dynamics (MD) simulations, we use a new approach to investigate rattling in the Al-doped defect pyrochlore tungstates: AAl0.33W1.67O6 (A = K, Rb, Cs). We find that although all the alkali metals rattle, the rattling of the K atoms is unique, involving local diffusion within a cage as well as vibrations at a range of frequencies. We show that the novel K rattling is driven by the strong anharmonicity and anisotropy of the local potentials around the K atoms, both of which are a consequence of the small size of the K rattler. Our findings may open new possibilities for phonon engineering in thermoelectric materials.",1310.8137v2 2014-03-05,Design and demonstration of a quasi-monoenergetic neutron source,"The design of a neutron source capable of producing 24 and 70 keV neutron beams with narrow energy spread is presented. The source exploits near-threshold kinematics of the $^{7}$Li(p,n)$^{7}$Be reaction while taking advantage of the interference `notches' found in the scattering cross-sections of iron. The design was implemented and characterized at the Center for Accelerator Mass Spectrometry at Lawrence Livermore National Laboratory. Alternative filters such as vanadium and manganese are also explored and the possibility of studying the response of different materials to low-energy nuclear recoils using the resultant neutron beams is discussed.",1403.1285v2 2014-03-21,Quantum Monte Carlo study of one-dimensional transition metal organometallic cluster systems and their suitability as spin filters,"We present calculations of electronic and magnetic structures of vanadium-benzene multidecker clusters V$_{n}$Bz$_{n+1}$ ($n$ = 1 - 3) using advanced quantum Monte Carlo methods. These and related systems have been identified as prospective spin filters in spintronic applications, assuming that their ground states are half-metallic ferromagnets. Although we find that magnetic properties of these multideckers are consistent with ferromagnetic coupling, their electronic structures do not appear to be half-metallic as previously assumed. In fact, they are ferromagnetic insulators with large and broadly similar $\uparrow$-/$\downarrow$-spin gaps. This makes the potential of these and related materials as spin filtering devices very limited, unless they are further modified or functionalized.",1403.5411v1 2014-04-14,Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions,"Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high surface PMA. Moreover, the effective magnetic anisotropy has a strong tendency to go from in-plane to out-of-plane character as a function of Cr and V concentration favoring out-of-plane magnetization direction for ~1.5 nm thick Fe layers at impurity concentrations above 20 %. At the same time, spin polarization is not affected and even enhanced in most situations favoring an increase of tunnel magnetoresistance (TMR) values.",1404.3523v1 2014-05-23,Extreme Ultraviolet Transient Grating Spectroscopy of Vanadium Dioxide,"Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO2 film with EUV diffraction from the optically excited sample. The VO2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.",1405.5964v1 2014-05-29,Reconfigurable anisotropy and functional transformations with VO$_{2}$-based metamaterial electric circuits,"We demonstrate an innovative multifunctional artificial material that combines exotic metamaterial properties and the environmentally responsive nature of phase change media. The tunable metamaterial is designed with the aid of two interwoven coordinate-transformation equations and implemented with a network of thin film resistors and vanadium dioxide ($VO_{2}$). The strong temperature dependence of $VO_{2}$ electrical conductivity results in a relevant modification of the resistor network behavior, and we provide experimental evidence for a reconfigurable metamaterial electric circuit (MMEC) that not only mimics a continuous medium but is also capable of responding to thermal stimulation through dynamic variation of its spatial anisotropy. Upon external temperature change the overall effective functionality of the material switches between a ""truncated-cloak"" and ""concentrator"" for electric currents. Possible applications may include adaptive matching resistor networks, multifunctional electronic devices, and equivalent artificial materials in the magnetic domain. Additionally, the proposed technology could also be relevant for thermal management of integrated circuits",1405.7743v1 2014-07-16,Density matrix approach to the orbital ordering in the spinel vanadates: A case study,"In this work we apply the density matrices approach to orbital ordering (OO) in order to study the OO of the spinel vanadates AV$_{2}$O$_{4}$ (A $\equiv$ Zn, Cd and Mg), which is normally believed to be responsible for the structural transition from cubic to tetragonal phase observed in these compounds. The density matrices of vanadium atoms are obtained by using {\it state-of-the-art} full-potential linearized augmented plane wave method based GGA+U calculations. In the absence of spin-orbit coupling, the present study shows the existence of anti-ferro OO in the global (local octahedral) coordinate system where $d_{xz}$ and $d_{yz}$ ($d_{xz}$+$d_{yz}$ and $d_{xz}$-$d_{yz}$) orbitals are mainly occupied at the neighboring V sites for all the compounds.",1407.4217v2 2014-08-01,Charge transfer across transition metal oxide interfaces: emergent conductance and new electronic structure,"We perform density functional theory plus dynamical mean field theory calculations to investi- gate internal charge transfer in an artificial superlattice composed of alternating layers of vanadate and manganite perovskite and Ruddlesden-Popper structure materials. We show that the elec- tronegativity difference between vanadium and manganese causes moderate charge transfer from VO2 to MnO2 layers in both perovskite and Ruddlesden-Popper based superlattices, leading to hole doping of the VO2 layer and electron doping of the MnO2 layer. Comparison of the perovskite and Ruddlesden-Popper based heterostructures provides insights into the role of the apical oxy- gen. Our first principles simulations demonstrate that the combination of internal charge transfer and quantum confinement provided by heterostructuring is a powerful approach to engineering electronic structure and tailoring correlation effects in transition metal oxides.",1408.0217v2 2014-08-06,Wavelength-Tunable Infrared Metamaterial by Tailoring Magnetic Resonance Condition with VO2 Phase Transition,"In this work, we report the design of a wavelength-tunable infrared metamaterial by exciting magnetic resonance with phase transition of vanadium dioxide (VO2). Numerical simulation shows a broad absorption peak at the wavelength of 10.9 um when VO2 is a metal, but it shifts to 15.1 um when VO2 changes to dielectric phase below its phase transition temperature of 68degC. The large tunability of 38.5% in the resonance wavelength stems from the different excitation conditions of magnetic resonance assisted by plasmon in metallic VO2 but optical phonons in dielectric VO2. The physical mechanism is elucidated with the aid of electromagnetic field distribution at the resonance wavelengths. A hybrid magnetic resonance mode due to plasmon-phonon coupling is also discussed. The results here would be beneficial for active control in novel electronic, optical and thermal devices.",1408.1356v1 2014-09-29,Optoelectronic excitations and photovoltaic effect in strongly correlated materials,"Solar cells based on conventional semiconductors have low efficiency in converting solar energy into electricity because the excess energy beyond the gap of an incident solar photon is converted into heat by phonons. Here we show by ab initio methods that the presence of strong Coulomb interactions in strongly correlated insulators (SCI) causes the highly photo-excited electron-hole pair to decay fast into multiple electron-hole pairs via impact ionization (II). We show that the II rate in the insulating $M_1$ phase of vanadium dioxide (chosen for this study as it is considered a prototypical SCI) is two orders of magnitude higher than in Si and much higher than the rate of hot electron/hole decay due to phonons. Our results indicate that a rather broad class of materials may be harnessed for an efficient solar-to-electrical energy conversion that has been not considered before.",1409.8261v1 2014-09-30,"Coupling and Electrical Control of Structural, Orbital and Magnetic Orders in Perovskites","Perovskite oxides are already widely used in industry and have huge potential for novel device applications thanks to the rich physical behaviour displayed in these materials. The key to the functional electronic properties exhibited by perovskites is often the so-called Jahn-Teller distortion. For applications, an electrical control of the Jahn-Teller distortions, which is so far out of reach, would therefore be highly desirable. Based on universal symmetry arguments, we determine new lattice mode couplings that can provide exactly this paradigm, and exemplify the effect from first-principles calculations. The proposed mechanism is completely general, however for illustrative purposes, we demonstrate the concept on vanadium based perovskites where we reveal an unprecedented orbital ordering and Jahn-Teller induced ferroelectricity. Thanks to the intimate coupling between Jahn-Teller distortions and electronic degrees of freedom, the electric field control of Jahn-Teller distortions is of general relevance and may find broad interest in various functional devices.",1409.8422v1 2014-10-06,Vacuum Thermal Switch Made of Phase Transition Materials Considering Thin Film and Substrate Effects,"In the present study, we demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341 K. Similar modulation effect has already been demonstrated and it will be extended to thin-film structure with substrate in this paper. Strong coupling of surface phonon polaritons between two insulating VO2 plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO2 emitter becomes metallic, resulting strong thermal switching effect. Fluctuational electrodynamics predicts more than 80% heat transfer reduction at sub-30-nm vacuum gaps and 50% at vacuum gap of 1 micron. By replacing the bulk VO2 receiver with a thin film of several tens of nanometers, the switching effect can be further improved over a broad range of vacuum gaps from 10 nm to 1 um. In addition, for the purpose of more practical setup in experiments and applications, the SiO2 substrate effect is also considered for the structure with thin-film emitter or receiver.",1410.1269v1 2014-10-24,Dynamic conductivity scaling in photoexcited V2O3 thin films,"Optical-pump terahertz-probe spectroscopy is used to investigate ultrafast far-infrared conductivity dynamics during the insulator-to-metal transition (IMT) in vanadium sesquioxide (V2O3). The resultant conductivity increase occurs on a tens of ps timescale, exhibiting a strong dependence on the initial temperature and fluence. We have identified a scaling of the conductivity dynamics upon renormalizing the time axis with a simple power law (alpha = 1/2) that depends solely on the initial, final, and conductivity onset temperatures. Qualitative and quantitative considerations indicate that the dynamics arise from nucleation and growth of the metallic phase which can be described by the Avrami model. We show that the temporal scaling arises from spatial scaling of the growth of the metallic volume fraction, highlighting the self-similar nature of the dynamics. Our results illustrate the important role played by mesoscopic effects in phase transition dynamics.",1410.6804v1 2014-11-17,The Mott criterion: So simple and yet so complex,"September 30, 2015 marks the 110th anniversary of the birth of the famous English physicist N. F. Mott. This article is dedicated to his memory. Here we consider the problem of metal-insulator transition. It is shown that the Mott criterion $a_{B}(n_{c})^{1/3} \approx 0.25$ is applicable not only to heavily doped semiconductors, but also to many other materials and systems, including strongly correlated transition-metal and rare-earth-metal compounds, such as vanadium oxides. A special emphasis is placed to the 'paramagnetic metal - antiferromagnetic insulator' transition in $V_{2}O_{3}$ doped with chromium. In Supplement we also briefly consider the history and state of the art of the Mott transition problem.",1411.4372v2 2015-03-26,Correlation-driven insulator-metal transition in near-ideal vanadium dioxide films,"We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely-electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (+/- 0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically-promising material.",1503.07892v1 2015-04-09,Control of plasmonic nanoantennas by reversible metal-insulator transition,"Nanophotonic (nanoplasmonic) structures confine, guide, and concentrate light on the nanoscale. Advancement of nanophotonics critically depends on active nanoscale control of these phenomena. Localized control of the insulator and metallic phases of vanadium dioxide (VO2) would open up a universe of applications in nanophotonics via modulation of the local dielectric environment of nanophotonic structures allowing them to function as active devices. Here we show dynamic reversible control of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed in the near-field for the first time. Using polarization-selective near-field imaging techniques, we monitor simultaneously the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipolar antennas to monopole antennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique capabilities open up exciting novel applications in active nanophotonics.",1504.02286v2 2015-04-21,Non-Contact Friction for Ion-Surface Interactions,"Non-contact friction forces are exerted on physical systems through dissipative processes, when the two systems are not in physical contact with each other, or, in quantum mechanical terms, when the overlap of their wave functions is negligible. Non-contact friction is mediated by the exchange of virtual quanta, with the additional requirement that the scattering process needs to have an inelastic component. For finite-temperature ion-surface interactions, the friction is essentially caused by Ohmic resistance due to the motion of the image charge moving in a dielectric material. A conceivable experiment is difficult because the friction force needs to be isolated from the interaction with the image charge, which significantly distorts the ion's flight path. We propose an experimental setup which is designed to minimize the influence of the image charge interaction though a compensation mechanism, and evaluate the energy loss due to non-contact friction for helium ions (He+) interacting with gold, vanadium, titanium and graphite surfaces. Interactions with the infinite series of mirror charges in the plates are summed in terms of the logarithmic derivatives of the Gamma function, and of the Hurwitz zeta function.",1504.05180v1 2015-04-27,Optical properties of V2O3 in its whole phase diagram,"Vanadium sesquioxide V2O3 is considered a textbook example of Mott-Hubbard physics. In this paper we present an extended optical study of its whole temperature/doping phase diagram as obtained by doping the pure material with M=Cr or Ti atoms (V1-xMx)2O3. We reveal that its thermodynamically stable metallic and insulating phases, although macroscopically equivalent, show very different low-energy electrodynamics. The Cr and Ti doping drastically change both the antiferromagnetic gap and the paramagnetic metallic properties. A slight chromium content induces a mesoscopic electronic phase separation, while the pure compound is characterized by short-lived quasiparticles at high temperature. This study thus provides a new comprehensive scenario of the Mott-Hubbard physics in the prototype compound V2O3.",1504.07279v1 2015-04-29,Hubbard Physics in the PAW GW Approximation,"It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by the splitting of states at the Fermi level into upper and lower Hubbard bands, and exhibits a giant transfer of spectral weight upon electron doping. The method is also employed to clearly illustrate that the M$_{1}$ and M$_{2}$ forms of vanadium dioxide are fundamentally different types of insulator. Standard GW calculations are sufficient to open a gap in M$_{1}$ VO$_{2}$, which arise from the Peierls pairings filling the valence band, creating homopolar bonds. The valence band wavefunctions are stabilized with respect to the conduction band, reducing polarizability and pushing the conduction band eigenvalues to higher energy. The M$_{2}$ structure however opens a gap from strong on-site interactions; it is a Mott insulator.",1504.07739v2 2015-06-03,Proximity-induced magnetism in transition-metal substituted graphene,"We investigate the interactions between two identical magnetic impurities substituted into a graphene superlattice. Using a first-principles approach, we calculate the electronic and magnetic properties for transition-metal substituted graphene systems with varying spatial separation. These calculations are compared for three different magnetic impurities, manganese, chromium, and vanadium. We determine the electronic band structure, density of states, and Millikan populations (magnetic moment) for each atom, as well as calculate the exchange parameter between the two magnetic atoms as a function of spatial separation. We find that the presence of magnetic impurities establishes a distinct magnetic moment in the graphene lattice, where the interactions are highly dependent on the spatial and magnetic characteristic between the magnetic atoms and the carbon atoms, which leads to either ferromagnetic or antiferromagnetic behavior. Furthermore, through an analysis of the calculated exchange energies and partial density of states, it is determined that interactions between the magnetic atoms can be classified as an RKKY interaction.",1506.01319v1 2015-07-01,Electronic structure of tungsten-doped vanadium dioxide,"A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior.",1507.00105v4 2015-07-12,High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators,"The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and promises to have immense application potentials in future dissipation-less quantum electronics. Here we present a novel kinetic pathway to realize the QAHE at high temperatures by $n$-$p$ codoping of three-dimensional topological insulators. We provide proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped Sb$_2$Te$_3$ and demonstrate that, strikingly, even at low concentrations of $\sim$2\% V and $\sim$1\% I, the system exhibits a quantized Hall conductance, the tell-tale hallmark of QAHE, at temperatures of at least $\sim$ 50 Kelvin, which is three orders of magnitude higher than the typical temperatures at which it has been realized so far. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.",1507.03218v1 2015-09-08,Kondo effect goes anisotropic in vanadate oxide superlattices,"We study the transport properties in SrVO3/LaVO3 (SVO/LVO) superlattices deposited on SrTiO3 (STO) substrates. We show that the electronic conduction occurs in the metallic LVO layers with a galvanomagnetism typical of a 2D Fermi surface. In addition, a Kondo-like component appears in both the thermal variation of resistivity and the magnetoresistance. Surprisingly, in this system where the STO interface does not contribute to the measured conduction, the Kondo correction is strongly anisotropic. We show that the growth temperature allows a direct control of this contribution. Finally, the key role of vanadium mixed valency stabilized by oxygen vacancies is enlightened.",1509.02265v1 2015-09-09,Metal-insulator Transition in VO2: a DFT+DMFT perspective,"We present a theoretical investigation of the electronic structure of rutile (metallic) and M$_1$ and M$_2$ monoclinic (insulating) phases of VO$_2$ employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO$_2$, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO$_2$: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M$_2$ phase), while strong superexchange within V-dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V-atoms. The resulting transition from rutile to dimerized M$_1$ phase is adiabatically connected to Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M$_1$ phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.",1509.02968v3 2015-11-27,Orbital Ordering in Fe$_{1-x}$Mn$_x$V$_2$O$_4$: A First Principles Study,"Long range orbital order has been investigated in Fe$_{1-x}$Mn$_x$V$_2$O$_4$ as a function of doping (x) using first principles density functional theory calculations including the effects of Coulomb correlation and spin-orbit interaction within GGA+U and GGA+U+SO approximations. Through a detailed analysis of corresponding Wannier orbital projections of the Vanadium d bands, we have clearly established that for x$\le$0.6, the orbital order at V sites consists of a linear superposition of d$_{xz}$ and d$_{yz}$ orbitals of the type d$_{xz}\pm$d$_{yz}$. Within each ab-plane a ferro-orbital ordering of either d$_{xz}$+d$_{yz}$ or d$_{xz}$-d$_{yz}$ is observed which alternates in successive ab-planes along the c-direction. On the contrary, for x$>$0.6, it is the d$_{xz}$ or d$_{yz}$ orbital which orders at V sites in successive ab-planes along c-direction (so called A-type ordering). At Fe sites, we observe an orbital ordering of d$_{x^2-y^2}$ orbitals for x$\le$0.6 and d$_{z^2}$ orbitals for x$>$0.6. Effect of spin-orbit interaction on orbital ordering is found to be not significant in the entire range of doping studied.",1511.08673v1 2016-04-12,Ab initio determination of spin Hamiltonians with anisotropic exchange interactions: the case of the pyrochlore ferromagnet Lu$_2$V$_2$O$_7$,"We present a general framework for deriving effective spin Hamiltonians of correlated magnetic systems based on a combination of relativistic ab initio density functional theory calculations (DFT), exact diagonalization of a generalized Hubbard Hamiltonian on finite clusters and spin projections onto the low-energy subspace. A key motivation is to determine anisotropic bilinear exchange couplings in materials of interest. As an example, we apply this method to the pyrochlore Lu$_2$V$_2$O$_7$ where the vanadium ions form a lattice of corner-sharing spin-1/2 tetrahedra. In this compound, anisotropic Dzyaloshinskii-Moriya interactions (DMI) play an essential role in inducing a magnon Hall effect. We obtain quantitative estimates of the nearest-neighbor Heisenberg exchange, the DMI, and the symmetric part of the anisotropic exchange tensor. Finally, we compare our results with experimental ones on the Lu$_2$V$_2$O$_7$ compound.",1604.03472v1 2016-05-17,Quantum Spin Liquid in a Breathing Kagome Lattice,"Motivated by recent experiments on the vanadium oxyfluoride material DQVOF, we examine possible spin liquid phases on a breathing kagome lattice of S=1/2 spins. By performing a projective symmetry group analysis, we determine the possible phases for both fermionic and bosonic $\mathbb{Z}_2$ spin liquids on this lattice, and establish the correspondence between the two. The nature of the ground state of the Heisenberg model on the isotropic kagome lattice is a hotly debated topic, with both $\mathbb{Z}_2$ and U(1) spin liquids argued to be plausible ground states. Using variational Monte Carlo techniques, we show that a gapped $\mathbb{Z}_2$ spin liquid emerges as the clear ground state in the presence of this breathing anisotropy. Our results suggest that the breathing anisotropy helps to stabilize this spin liquid ground state, which may aid us in understanding the results of experiments and help to direct future numerical studies on these systems.",1605.05322v1 2016-06-24,Charge-order-induced ferroelectricity in LaVO$_{3}$/SrVO$_{3}$ superlattices,"The structure and properties of the 1:1 superlattice of LaVO$_{3}$ and SrVO$_{3}$ are investigated with a first-principles density-functional-theory-plus-$U$ (DFT+$U$) method. The lowest energy states are antiferromagnetic charge-ordered Mott-insulating phases. In one of these insulating phases, layered charge ordering combines with the layered cation ordering to produce a polar structure with nonzero spontaneous polarization normal to the interfaces. This polarization is produced by electron transfer between the V$^{3+}$ and V$^{4+}$ layers, and is comparable to that of conventional ferroelectrics. The energy of this polar state relative to the nonpolar ground state is only 3 meV per vanadium. Under tensile strain, this energy difference can be further reduced, suggesting that the polar phase can be induced by applied electric field, yielding an antiferroelectric double-hysteresis loop. If the system does not switch back to the nonpolar state on removal of the field, a ferroelectric-type hysteresis loop could be observed.",1606.07835v1 2016-07-20,Studies on the Magnetic Ground State of a Spin Möbius Strip,"Here we report the synthesis, structure and detailed characterisation of three n-membered oxovanadium rings, Na$_n$[(V=O)$_n$Na$_n$(H$_2$O)$_n$($\alpha$, $\beta$, or $\gamma$-CD)$_2$]$m$H$_2$O (n = 6, 7, or 8), prepared by the reactions of (V=O)SO$_4$$\cdot$$x$H$_2$O with $\alpha$, $\beta$, or $\gamma$-cyclodextrins (CDs) and NaOH in water. Their alternating heterometallic vanadium/sodium cyclic core structures were sandwiched between two CD moieties such that O-Na-O groups separated neighbouring vanadyl ions. Antiferromagnetic interactions between the $S$ = 1/2 vanadyl ions led to $S$ = 0 ground states for the even-membered rings, but to two quasi-degenerate $S$ = 1/2 states for the spin-frustrated heptanuclear cluster.",1607.06130v1 2016-08-11,Hall measurement of ultra thin vanadium dioxide thin films,"In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the semiconducting and metallic phases. The decrease of the resistivity with increasing temperature is mainly caused by the increase in the number density of charge carriers. The temperature dependence of the carrier concentration indicates the VO$_2$ films has a band gap of 0.40$\pm$0.09 $ev$ in the semiconducting phase. Analysis of hall effect data based on a composite cube model suggests that the sample has some untransitional phase with a length that is 1/4 of the grains.",1608.03378v2 2016-08-12,Growth of ultra thin vanadium dioxide thin films using magnetron sputtering,"In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial pressures of oxygen is an effective way at stabilizing the VO$_2$(M$_{1}$) phase on the SiO$_2$ surface. VO$_2$ films with a thickness of 42nm show a continuous microstructure, and undergo a resistivity change of more than a factor of 200 as the temperature of the film increases above 72$^{o}C$. The film shows hysteresis in the metal-insulator transition temperature upon heating and cooling with a width of approximately 8$^o$C. The resistivity of the low temperature semiconducting phase is found to be thermally activated with an activation energy 0.16$\pm$0.03 $ev$. Stress measurements using X-ray diffraction indicate that the ultra thin VO$_2$ film has a large tensile stress of 2.0$\pm$0.2 $GPa$. This value agrees well with the calculated thermal stress due to differential thermal expansion between the VO$_2$ thin film and silicon substrate. The stress leads to a shift of the metal-insulator transition temperature by approximately 4$^{o}C$.",1608.03911v1 2016-09-20,Levelized Cost of Energy for PV and Grid Scale Energy Storage Systems,"With the increasing penetration of renewable energy sources and energy storage devices in the power system, it is important to evaluate the cost of the system by using Levelized Cost of Energy (LCOE). In this paper a new metric, Levelized Cost of Delivery (LCOD) is proposed to calculate the LCOE for the energy storage. The recent definitions in LCOE for renewable energy system has been reviewed. From fundamental principles, it is demonstrated that there is a need to introduce a new method to evaluate LCOE of the system as the conventional LCOE is not applicable for renewable energy storage systems. Three years of solar irradiance data in Africa collected from Johannesburg and the national load data from Kenya are obtained for case studies. The proposed cost calculation methods are evaluated for two types of storage technologies (Vanadium Redox Battery (VRB) and Lithium-ion) with real-life data. It shows that the marginal LCOE and LCOD indices can be used to assist policymakers to consider the discount rate and the type of storage technology for a cost effective renewable storage energy system.",1609.06000v1 2016-10-16,A Simple Analytical Model of Coupled Single Flow Channel over Porous Electrode in Vanadium Redox Flow Battery with Serpentine Flow Channel,"A simple analytical model of a layered system comprised of a single passage of a serpentine flow channel and a parallel underlying porous electrode (or porous layer) is proposed. This analytical model is derived from Navier-Stokes motion in the flow channel and Darcy-Brinkman model in the porous layer. The continuities of flow velocity and normal stress are applied at the interface between the flow channel and the porous layer. The effects of the inlet volumetric flow rate, thickness of the flow channel and thickness of a typical carbon fiber paper porous layer on the volumetric flow rate within this porous layer are studied. The maximum current density based on the electrolyte volumetric flow rate is predicted, and found to be consistent with reported numerical simulation. It is found that, for a mean inlet flow velocity of 33.3 cm s-1, the analytical maximum current density is estimated to be 377 mA cm-2, which compares favorably with experimental result reported by others of ~400 mA cm-2.",1610.04923v1 2016-11-29,Direct observation of the M2 phase with its Mott transition in a VO$_2$ film,"In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO$_2$ film using conductive atomic force microscopy and Raman scattering. Upon the structural transition from monoclinic to rutile, we observe directly an intermediate state showing the coexistence of monoclinic M1 and M2 phases. The conductivity near the grain boundary in this regime is six times larger than that of the grain core, producing a donut-like landscape. Our results reveal an intra-grain percolation process, indicating that VO$_2$ with the M2 phase is a Mott insulator.",1611.09508v1 2017-01-19,Terahertz Dielectric Analysis and Spin-Phonon Coupling in Multiferroic GeV$_4$S$_8$,"We present an investigation of the multiferroic lacunar spinel compound GeV$_4$S$_8$ using time-domain terahertz spectroscopy. We find three absorptions which either appear or shift at the antiferromagnetic transition temperature, T$_N = 17$ K, as S=1 magnetic moments develop on vanadium tetrahedra. Two of these absorptions are coupled to the magnetic state and one only appears below the N\'{e}el temperature, and is interpreted as a magnon. We also observe isosbestic points in the dielectric constant in both the temperature and frequency domains. Further, we perform analysis on the isosbestic features to reveal an interesting collapse into a single curve as a function of both frequency and temperature, behavior which exists throughout the phase transitions. This analysis suggests the importance of spectral changes in the terahertz range which are linear in frequency and temperature.",1701.05539v2 2017-02-08,Dynamically controlled plasmonic nano-antenna phased array utilizing vanadium dioxide,"We propose and analyze theoretically an approach for realizing a tunable optical phased-array antenna utilizing the properties of VO2 for electronic beam steering applications in the near-IR spectral range. The device is based on a 1D array of slot nano-antennas engraved in a thin Au film grown over VO2 layer. The tuning is obtained by inducing a temperature gradient over the device, which changes the refractive index of the VO2, and hence modifies the phase response of the elements comprising the array, by producing a thermal gradient within the underlying PCM layer. Using a 10-element array, we show that an incident beam can be steered up to with respect to the normal, by applying a gradient of less than 10{\deg}C.",1702.02333v1 2017-02-16,Consecutive Insulator-Metal-Insulator Phase Transitions of Vanadium Dioxide by Hydrogen Doping,"We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the polarized charges from doped hydrogens play an important role. These charges gradually occupy V3d-O2p hybridized orbitals and consequently modulate the filling of the VO2 crystal conduction band-edge states, which eventually evolve into new valence band-edge states. This demonstrates the exceptional sensitivity of VO2 electronic properties to electron concentration and orbital occupancy, providing key information for the phase transition mechanism.",1702.05027v2 2017-03-09,Doping-induced superconductivity of ZrB$_2$ and HfB$_2$,"Unlike the widely studied $s$-type two-gap superconductor MgB$_2$, the chemically similar compounds ZrB$_2$ and HfB$_2$ do not superconduct above 1 K. Yet, it has been shown that small amounts of self- or extrinsic doping (in particular with vanadium), can induce superconductivity in these materials. Based on results of different macro- and microscopic measurements, including magnetometry, nuclear magnetic resonance (NMR), resistivity, and muon-spin rotation ($\mu$SR), we present a comparative study of Zr$_{0.96}$V$_{0.04}$B$_2$ and Hf$_{0.97}$V$_{0.03}$B$_2$. Their key magnetic and superconducting features are determined and the results are considered within the theoretical framework of multiband superconductivity proposed for MgB$_2$. Detailed Fermi surface (FS) and electronic structure calculations reveal the difference between MgB$_2$ and transition-metal diborides.",1703.03253v1 2017-04-03,Rechargeable redox flow batteries: Maximum current density with electrolyte flow reactant penetration in a serpentine flow structure,"Rechargeable redox flow batteries with serpentine flow field designs have been demonstrated to deliver higher current density and power density in medium and large-scale stationary energy storage applications. Nevertheless, the fundamental mechanisms involved with improved current density in flow batteries with flow field designs have not been understood. Here we report a maximum current density concept associated with stoichiometric availability of electrolyte reactant flow penetration through the porous electrode that can be achieved in a flow battery system with a ""zero-gap""serpentine flow field architecture. This concept can explain a higher current density achieved within allowing reactions of all species soluble in the electrolyte. Further validations with experimental data are confirmed by an example of a vanadium flow battery with a serpentine flow structure over carbon paper electrode.",1704.00744v2 2017-04-05,High operating temperature in V-based superconducting quantum interference proximity transistors,"Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52$\ \textrm{mV}/\Phi_0$) and flux-to-current (above 12$\ \textrm{nA}/\Phi_0$) transfer functions, with the best estimated flux sensitivity $\sim$2.6$\ \mu\Phi_0/\sqrt{\textrm{Hz}}$ reached under fixed voltage bias, where $\Phi_0$ is the flux quantum. The interferometers operate up to $T_\textrm{bath}\simeq$ 2 $ \textrm{K}$, with an improvement of 70$\%$ of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.",1704.01284v2 2017-04-17,"Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide","The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov-Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimensionalities. We report apparent WLMR and conductance fluctuations in H$_{x}$VO$_{2}$, a poor metal (in violation of the Mott-Ioffe-Regel limit) stabilized by the suppression of the VO$_{2}$ metal-insulator transition through atomic hydrogen doping. Epitaxial thin films, single-crystal nanobeams, and nanosheets show similar phenomenology, though the details of the apparent WLMR seem to depend on the combined effects of the strain environment and presumed doping level. Self-consistent quantitative analysis of the WLMR is challenging given this and the high resistivity of the material, since the quantitative expressions for WLMR are derived assuming good metallicity. These observations raise the issue of how to assess and analyze mesoscopic quantum effects in poor metals.",1704.05080v1 2017-04-29,Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate,"Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as advanced smart window.",1705.00130v1 2017-06-06,Structural properties of thin-film ferromagnetic topological insulators,"We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investigate the effect of doping, substrate choice and film thickness on the (Bi, Sb)$_2$Te$_3$ unit cell using high-resolution X-ray diffractometry. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements provide local structural and interfacial information. We find that the unit cell is unaffected in-plane by vanadium doping changes, and remains unchanged over a thickness range of 4--10 quintuple layers (1 QL $\approx$ 1 nm). The in-plane lattice parameter ($a$) also remains the same in films grown on different substrate materials. However, out-of-plane the $c$-axis is reduced in films grown on less closely lattice-matched substrates, and increases with the doping level.",1706.01848v1 2017-06-26,Artifact Free Transient Near-Field Nanoscopy,"We report on the first implementation of ultrafast near field nanoscopy carried out with the transient pseudoheterodyne detection method (Tr-pHD). This method is well suited for efficient and artifact free pump-probe scattering-type near-field optical microscopy with nanometer scale resolution. The Tr-pHD technique is critically compared to other data acquisition methods and found to offer significant advantages. Experimental evidence for the advantages of Tr-pHD is provided in the Near-IR frequency range. Crucial factors involved in achieving proper performance of the Tr-pHD method with pulsed laser sources are analyzed and detailed in this work. We applied this novel method to time-resolved and spatially resolved studies of the photo-induced effects in the insulator-to-metal transition system vanadium dioxide with nanometer scale resolution.",1706.08478v2 2017-06-30,Stability of the spin-$1/2$ kagome ground state with breathing anisotropy,"We numerically study the spin-$1/2$ breathing kagome lattice. In this variation of the kagome Heisenberg antiferromagnet, the spins belonging to upward and downward facing triangles have different coupling strengths. Using the density matrix renormalization group (DMRG) method and exact diagonalization, we show that the kagome antiferromagnet spin liquid is extremely robust to this anisotropy. Materials featuring this anisotropy -- and especially the recently studied vanadium compound $[{\mathrm{NH}}_{4}{]}_{2}[{\mathbf{C}}_{7}{\mathbf{H}}_{14}\mathbf{N}][{\mathbf{V}}_{7}{\mathbf{O}}_{6}{\mathbf{F}}_{18}]$ (DQVOF) -- may thus be very good candidates to realize the much studied kagome spin liquid. Further, we closely examine the limit of strong breathing anisotropy and find indications of a transition to a nematic phase.",1706.10105v1 2017-07-03,"Ab initio study of Li, Mg and Al insertion into rutile VO2: Fast diffusion and enhanced voltages","Vanadium oxides are among the most promising materials that can be used as electrodes in rechargeable metal-ion batteries. In this work, we systematically investigate thermodynamic, electronic and kinetic properties associated with the insertion of Li, Mg and Al atoms in rutile VO2. Using first-principles calculations, we systematically study the structural evolution and voltage curves of LixVO2, MgxVO2 and AlxVO2 (0 99.5%). We conclude by commenting on the general molecular requirements for the chemical design of further such spintronics components.",1712.06331v1 2018-01-01,Radiative thermal runaway due to negative differential thermal emission across a solid-solid phase transition,"Thermal runaway occurs when a rise in system temperature results in heat generation rates exceeding dissipation rates. Here we demonstrate that thermal runaway occurs in thermal radiative systems, given a sufficient level of negative differential thermal emission. By exploiting the insulator-to-metal phase transition of vanadium dioxide, we show that a small increase in heat generation (e.g., 10 nW/mm2) can result in a large change in surface temperature (e.g., ~35 K), as the thermal emitter switches from high emissivity to low emissivity. While thermal runaway is typically associated with catastrophic failure mechanisms, detailed understanding and control of this phenomenon may give rise to new opportunities in infrared sensing, camouflage, and rectification.",1801.00376v1 2018-01-02,Spectroscopic study of native defects in the semiconductor to metal phase transition in V2O5 nanostructure,"Vanadium is a transition metal with multiple oxidation states and V2O5 is the most stable form among them. Besides catalysis, chemical sensing and photo-chromatic applications, V2O5 is also reported to exhibit a semiconductor to metal transition (SMT) at a temperature range of 530-560K. Even though, there are debates in using the term 'SMT' for V2O5, the metallic behavior above transition temperature and its origin are of great interests in the scientific community. In this study, V2O5 nanostructures were deposited on SiO2/Si substrate by vapour transport method using Au as catalyst. Temperature dependent electrical measurement confirms the SMT in V2O5 without any structural change. Temperature dependent photoluminescence analysis proves the appearance of oxygen vacancy related peaks due to reduction of V2O5 above the transition temperature, as also inferred from temperature dependent Raman spectroscopic studies. The newly evolved defect levels in the V2O5 electronic structure with increasing temperature is also understood from the downward shift of the bottom most split-off conduction bands due to breakdown of pd{\pi} bonds leading to metallic behavior in V2O5 above the transition temperature.",1801.00546v1 2018-01-02,Vanadyl dithiolate single molecule transistors: the next spintronic frontier?,"The role of Chemistry in the road towards quantum devices is the design of elementary pieces with a built-in function. A brilliant example is the use of molecular transistors as nuclear spin detectors, which, up to now, has been implemented only on [TbPc$_2$]$^-$. We argue that this is an artificial constraint and critically discuss the limitations of current theoretical approaches to assess the potential of molecules for their use in spintronics. In connection with this, we review the recent progress in the preparation of highly coherent spin qubits based on vanadium dithiolate complexes and argue that the use of vanadyl dithiolates as single molecule transistors to read and control a triple nuclear spin qubit could give rise to new phenomena, notably including a low-current nuclear spin detection scheme by means of a spin valve effect.",1801.00595v1 2018-01-11,An innovative technique for the investigation of the 4-fold forbidden beta-decay of $^{50}$V,"For the first time a Vanadium-based crystal was operated as cryogenic particle detector. The scintillating low temperature calorimetric technique was used for the characterization of a 22 g YVO$_4$ crystal aiming at the investigation of the 4-fold forbidden non-unique $\beta^-$ decay of $^{50}$V. The excellent bolometric performance of the compound together with high light output of the crystal makes it an outstanding technique for the study of such elusive rate process. The internal radioactive contaminations of the crystal are also investigated showing that an improvement on the current status of material selection and purification are needed, $^{235/238}$U and $^{232}$Th are measured at the level of 28 mBq/kg, 1.3 Bq/kg and 28 mBq/kg, respectively. In this work, we also discuss a future upgrade of the experimental set-up which may pave the road for the detection of the rare $^{50}$V $\beta^-$ decay.",1801.03980v2 2018-03-05,Mott transition with Holographic Spectral function,"We show that the Mott transition can be realized in a holographic model of a fermion with bulk mass, $m$, and a dipole interaction of coupling strength $p$. The phase diagram contains gapless, pseudo-gap and gapped phases and the first one can be further divided into four sub-classes. We compare the spectral densities of our holographic model with the Dynamical Mean Field Theory (DMFT) results for Hubbard model as well as the experimental data of Vanadium Oxide materials. Interestingly, single-site and cluster DMFT results of Hubbard model share some similarities with the holographic model of different parameters, although the spectral functions are quite different due to the asymmetry in the holography part. The theory can fit the X-ray absorption spectrum (XAS) data quite well, but once the theory parameters are fixed with the former it can fit the photoelectric emission spectrum (PES) data only if we symmetrize the spectral function.",1803.01864v2 2018-03-12,"Kramers degeneracy and relaxation in vanadium, niobium and tantalum clusters","In this work we use magnetic deflection of V, Nb, and Ta atomic clusters to measure their magnetic moments. While only a few of the clusters show weak magnetism, all odd-numbered clusters deflect due to the presence of a single unpaired electron. Surprisingly, for majority of V and Nb clusters an atomic-like behavior is found, which is a direct indication of the absence of spin-lattice interaction. This is in agreement with Kramers degeneracy theorem for systems with a half-integer spin. This purely quantum phenomenon is surprisingly observed for large systems of more than 20 atoms, and also indicates various quantum relaxation processes, via Raman two-phonon and Orbach high-spin mechanisms. In heavier, Ta clusters, the relaxation is always present, probably due to larger masses and thus lower phonon energies, as well as increased spin-orbit coupling.",1803.04320v1 2018-03-21,Novel single-layer vanadium sulphide phases,"VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.",1803.07999v1 2018-03-31,Work Function Characterization of the Directionally Solidified LaB6 VB2 Eutectic,"With its low work function and high mechanical strength, the LaB6/VB2 eutectic system is an interesting candidate for high performance thermionic emitters. For the development of device applications, it is important to understand the origin, value, and spatial distribution of the work function in this system. Here we combine thermal emission electron microscopy and low energy electron microscopy with Auger electron spectroscopy and physical vapour deposition of the constituent elements to explore physical and chemical conditions governing the work function of these surfaces. Our results include the observation that work function is lower (and emission intensity is higher) on VB2 inclusions than on the LaB6 matrix. We also observe that the deposition of atomic monolayer doses of vanadium results in surprisingly significant lowering of the work function with values as low as 1.1 eV.",1804.00166v1 2018-05-25,Reconfigurable terahertz quarter-wave plate for helicity switching based on Babinet inversion of anisotropic checkerboard metasurface,"Dynamic helicity switching by utilizing metasurfaces is challenging because it requires deep modulation of polarization states. To realize such helicity switching, this paper proposes a dynamic metasurface functioning as a switchable quarter-wave plate, the fast axis of which can be dynamically rotated by $90^\circ$. The device is based on the critical transition of an anisotropic metallic checkerboard, which realizes the deep modulation and simultaneous design of the switchable states. After verifying the functionality of the ideally designed device in a simulation, we tune its structural parameters to realize practical experiments in the terahertz frequency range. By evaluating the fabricated sample with vanadium dioxide, the conductivity of which can be controlled by temperature, its dynamic helicity switching function is demonstrated.",1805.10034v1 2018-06-08,A Model of an Oscillatory Neural Network with Multilevel Neurons for Pattern Recognition and Computing,"The current study uses a novel method of multilevel neurons and high order synchronization effects described by a family of special metrics, for pattern recognition in an oscillatory neural network (ONN). The output oscillator (neuron) of the network has multilevel variations in its synchronization value with the reference oscillator, and allows classification of an input pattern into a set of classes. The ONN model is implemented on thermally-coupled vanadium dioxide oscillators. The ONN is trained by the simulated annealing algorithm for selection of the network parameters. The results demonstrate that ONN is capable of classifying 512 visual patterns (as a cell array 3 * 3, distributed by symmetry into 102 classes) into a set of classes with a maximum number of elements up to fourteen. The classification capability of the network depends on the interior noise level and synchronization effectiveness parameter. The model allows for designing multilevel output cascades of neural networks with high net data throughput. The presented method can be applied in ONNs with various coupling mechanisms and oscillator topology.",1806.03079v2 2018-06-11,Oscillations of the Critical Temperature in a (Fe/Cr/Fe)/V/Fe Heterostructure,"The superconducting and magnetic properties of the (Fe/Cr/Fe)/V/Fe layered system with variable thickness of the chromium layer have been experimentally and theoretically studied. The magnetic properties of the system have been studied by the ferromagnetic resonance method, and the superconducting transition temperature has been measured from the jump in the magnetic susceptibility. A wide variety of magnetic states are observed in the system; in particular, the structure of small domains can arise in the iron layer placed between vanadium and chromium. It has been shown experimentally that the critical temperature $T_c$ of the superconducting transition undergoes nonmonotonic oscillations with a noticeable amplitude in the given system with the change in the thickness of the Cr layer. The proposed model based on the proximity effect theory makes it possible to relate these $T_c$ oscillations to the features of the magnetic structure of the samples.",1806.04180v1 2018-07-02,Mapping of Yu-Shiba-Rusinov states from an extended scatterer,"We investigate the spatial evolution of Yu-Shiba-Rusinov (YSR) states resulting from the interaction between Copper phthalocyanine molecules and a superconducting Vanadium (100) surface with submolecular resolution. Each molecule creates several YSR states at different energies showing distinctly different spatial intensity patterns. Surprisingly, on the molecules the largest YSR intensities are found not at the metal center, but close to one of the pyrrolic N-atoms, demonstrating strong molecular substrate interactions via the organic ligands. Energy resolved YSR maps reveal that the different YSR states originate from different molecular orbitals. We also follow the YSR states well-beyond the extent of the molecules and find clear oscillations of the YSR intensities without strong particle hole scattering phase differences. This is in contrast to expectations from a point scattering model and recent experimental findings on atomic impurities on superconductors. Our results can be explained by treating the molecular system as extended scatterer. Our findings provide new insights that are crucial to interpret the effects of a variety of magnetic systems on superconductors, in particular also those discussed in the context of Majorana bound states, which because of their size can not be considered point like as well.",1807.00646v1 2018-08-02,Kinetic Spinodal Instabilities in the Mott Transition in V2O3: Evidence from Hysteresis Scaling and Dissipative Phase Ordering,"We present the first systematic observation of scaling of thermal hysteresis with the temperature scanning rate around an abrupt thermodynamic transition in correlated electron systems. We show that the depth of supercooling and superheating in vanadium sesquioxide (V2O3) shifts with the temperature quench rates. The dynamic scaling exponent is close to the mean field prediction of 2/3. These observations, combined with the purely dissipative continuous ordering seen in ""quench-and-hold"" experiments, indicate departures from classical nucleation theory toward a barrier-free phase ordering associated with critical dynamics. Observation of critical-like features and scaling in a thermally induced abrupt phase transition suggests that the presence of a spinodal-like instability is not just an artifact of the mean field theories but can also exist in the transformation kinetics of real systems, surviving fluctuations.",1808.00693v1 2018-08-27,Vanadium dioxide circuits emulate neurological disorders,"Information in the central nervous system (CNS) is conducted via electrical signals known as action potentials and is encoded in time. Several neurological disorders including depression, Attention Deficit Hyperactivity Disorder (ADHD), originate in faulty brain signaling frequencies. Here, we present a Hodgkin-Huxley model analog for a strongly correlated VO2 artificial neuron system that undergoes an electrically-driven insulator-metal transition. We demonstrate that tuning of the insulating phase resistance in VO2 threshold switch circuits can enable direct mimicry of neuronal origins of disorders in the central nervous system. The results introduce use of circuits based on quantum materials as complementary to model animal studies for neuroscience, especially when precise measurements of local electrical properties or competing parallel paths for conduction in complex neural circuits can be a challenge to identify onset of breakdown or diagnose early symptoms of disease.",1808.08820v1 2018-09-20,Biological plausibility and stochasticity in scalable VO2 active memristor neurons,"Neuromorphic networks of artificial neurons and synapses can solve computational hard problems with energy efficiencies unattainable for von Neumann architectures. For image processing, silicon neuromorphic processors outperform graphic processing units (GPUs) in energy efficiency by a large margin, but they deliver much lower chip-scale throughput. The performance-efficiency dilemma for silicon processors may not be overcome by Moore's law scaling of complementary metal-oxide-semiconductor (CMOS) field-effect transistors. Scalable and biomimetic active memristor neurons and passive memristor synapses form a self-sufficient basis for a transistorless neural network. However, previous demonstrations of memristor neurons only showed simple integrate-and-fire (I&F) behaviors and did not reveal the rich dynamics and computational complexity of biological neurons. Here we show that neurons built with nanoscale vanadium dioxide active memristors possess all three classes of excitability and most of the known biological neuronal dynamics, and are intrinsically stochastic. With the favorable size and power scaling, there is a path toward an all-memristor neuromorphic cortical computer.",1809.07867v1 2018-09-25,Phase change materials for nano-polaritonics: a case study of hBN/VO2 heterostructures,"Polaritonic excitation and control in van der Waals (vdW) materials exhibit superior merits than conventional materials and thus hold new promise for exploring light matter interactions. In this work, we created vdW heterostructures combining hexagonal boron nitride (hBN) and a representative phase change material - vanadium dioxide (VO2). Using infrared nano-spectroscopy and nano-imaging, we demonstrated the dynamic tunability of hyperbolic phonon polaritons in hBN/VO2 heterostructures by temperature control in a precise and reversible fashion. The dynamic tuning of the polaritons stems from the change of local dielectric properties of the VO2 sublayer through insulator to metal transition by the temperature control. The high susceptibility of polaritons to electronic phase transitions opens possibilities for applications of vdW materials in combination with correlated phase change materials.",1809.09652v1 2018-09-27,The origin of the vanadium dioxide transition entropy,"The reversible metal-insulator transition in VO$_2$ at $T_\text{C} \approx 340$ K has been closely scrutinized yet its thermodynamic origin remains ambiguous. We discuss the origin of the transition entropy by calculating the electron and phonon contributions at $T_\text{C}$ using density functional theory. The vibration frequencies are obtained from harmonic phonon calculations, with the soft modes that are imaginary at zero temperature renormalized to real values at $T_\text{C}$ using experimental information from diffuse x-ray scattering at high-symmetry wavevectors. Gaussian Process Regression is used to infer the transformed frequencies for wavevectors across the whole Brillouin zone, and in turn compute the finite temperature phonon partition function to predict transition thermodynamics. Using this method, we predict the phase transition in VO$_2$ is driven five to one by phonon entropy over electronic entropy, and predict a total transition entropy that accounts for $95$ % of the calorimetric value.",1809.10703v2 2018-09-27,Epitaxial Growth and Electrical Properties of VO2 on LSAT (111) substrate,"We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||LSAT[11-2]. We observed a sharp four orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. We also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.",1809.10748v1 2018-12-11,The effect of crystal structure in sputtering of two-component single crystal targets,"In the present paper the forward sputtering of atoms of the components under ion bombardment of the single crystal VSi2 (0001) face is studied with the use of molecular dynamics computer simulations. Sputtering of atoms of the components under ion bombardment of the virtual single crystals VV2 and SiSi2 consisting of atoms of the same mass but located in the lattice sites of V and Si sublattices is calculated. The new effect in the selective sputtering of two-component targets is studied: atoms from the vanadium lattice sites are preferentially forward sputtered for equal masses and equal surface binding energies of atoms of the components. This effect one could name the effect of nonidentity of lattice sites of the components in the complex lattice of VSi2 (of the C40 type) to the propagation of momentum in collision cascades and thus the effect of structure in the selective sputtering of two-component single crystal targets. Key words: sputtering, transmission of ions, selective sputtering, transmission sputtering, two-component targets, VSi2, thin single-crystal films.",1812.04310v1 2018-12-14,VI3 - a new layered ferromagnetic semiconductor,"Two-dimensional (2D) materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here we report the discovery of ferromagnetism in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine-iodine van der Waals gap. It has a BiI3-type structure (R-3, No.148) at room temperature, and our experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto-optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical band gap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.",1812.05982v1 2019-02-04,"Passive radiative ""thermostat"" enabled by phase-change photonic nanostructures","A thermostat senses the temperature of a physical system and switches heating or cooling devices on or off, regulating the flow of heat to maintain the system's temperature near a desired setpoint. Taking advantage of recent advances in radiative heat transfer technologies, here we propose a passive radiative ""thermostat"" based on phase-change photonic nanostructures for thermal regulation at room temperature. By self-adjusting their visible to mid-IR absorptivity and emissivity responses depending on the ambient temperature, the proposed devices use the sky to passively cool or heat during day-time using the phase-change transition temperature as the setpoint, while at night-time temperature is maintained at or below ambient. We simulate the performance of a passive nanophotonic thermostat design based on vanadium dioxide thin films, showing daytime passive cooling (heating) with respect to ambient in hot (cold) days, maintaining an equilibrium temperature approximately locked within the phase transition region. Passive radiative thermostats can potentially enable novel thermal management technologies, e.g. to moderate diurnal temperature in regions with extreme annual thermal swings.",1902.01354v1 2019-02-12,Development of high-sensitivity chip calorimeters for cellular metabolic heat sensing,"Cellular metabolic rate is a good indicator of the physiological state of cells and its changes, which can be measured by total heat flux accompanying metabolism. Chip calorimeters can provide label-free and high throughput measurements of cellular metabolic rate, however, lack of high power resolution and microfluidic sample handling capability has been preventing their wide applications. We report high-resolution chip calorimeters integrated with thin-film parylene microfluidics, which can reliably measure metabolic heat from mammalian cells with controlled stimuli. The molding and bonding technique allowed fast and reliable parylene microfluidic channel fabrications and highly sensitive vanadium oxide thermistor enabled temperature resolution as small as ~ 15 {\mu}K, which led to a three-orders-of-magnitude improvement in volume specific power resolutions. Measurements of metabolic heat were successfully demonstrated with adherent and nonadherent cells. We expect the chip calorimeter will provide a universal platform for fundamental cell-biology studies and biomedical applications including cell-based assay for drug discovery.",1902.04503v2 2019-02-25,Superconductivity in the surface state of noble metal gold and its Fermi level tuning by EuS dielectric,"The induced superconductivity (SC) in a robust and scalable quantum material with strong Rashba spin-orbit coupling is particularly attractive for generating topological superconductivity and Majorana bound states (MBS). Gold (111) thin film has been proposed as a promising candidate because of the large Rashba energy, the predicted topological nature and the possibility for large-scale MBS device fabrications. We experimentally demonstrate two important steps towards achieving such a goal. We successfully show induced SC in the Shockley surface state (SS) of ultrathin Au(111) layers grown over epitaxial vanadium films, which is easily achievable on a wafer scale. The emergence of SC in the SS, which is physically separated from a bulk superconductor, is attained by indirect quasiparticle scattering processes instead of by conventional interfacial Andreev reflections. We further show the ability to tune the SS Fermi level (E_F) by interfacing SS with a high-k dielectric ferromagnetic insulator EuS. The shift of E_F from ~ 550 mV to ~34mV in superconducting SS is an important step towards realizing MBS in this robust system.",1902.09664v1 2019-03-10,An Adaptive Observer Design for Charge-State and Crossover Estimation in Disproportionation Redox Flow Batteries undergoing Self-Discharge,"This article considers a model formulation and an adaptive observer design for the simultaneous estimation of the state of charge and crossover flux in disproportionation redox flow batteries. This novel nonaqueous battery chemistry allows a simple isothermal lumped parameter model to be formulated. The transport of vanadium through the porous separator is a key unknown function of battery variables and it is approximated in the space of continuous functions. The state and parameter observer adaptation laws are derived using Lyapunov analysis applied to the estimation error, the stability and convergence of which are proved. Numerical values of observer gains are calculated by solving a polytopic linear matrix inequality and equality problem via convex optimization. The performance of this design is evaluated on a laboratory flow battery prototype, and it is shown that the crossover flux can be considered a linear function of state of charge for this battery configuration during self-discharge.",1903.04073v1 2019-05-18,A Fixed-Flexible BESS Allocation Scheme for Transmission Networks Considering Uncertainties,"Battery energy storage systems (BESSs) can play a key role in mitigating the intermittency and uncertainty associated with adding large amounts of renewable energy to the bulk power system (BPS). Two BESS technologies that have gained prominence in this regard are Lithium-ion (LI) BESS and Vanadium redox flow (VRF) BESS. This paper proposes a fixed-flexible BESS allocation scheme that exploits the complementary characteristics of LI and VRF BESSs to attain optimal techno-economic benefits in a wind-integrated BPS. Studies carried out on relatively large transmission networks demonstrate that benefits such as reduction in system operation cost, wind spillage, voltage fluctuations, and discounted payback period, can be realized by using the proposed scheme.",1905.07536v3 2019-05-27,A State Observer Design for Simultaneous Estimation of Charge State and Crossover in Self-Discharging Disproportionation Redox Flow Batteries,"This paper presents an augmented state observer design for the simultaneous estimation of charge state and crossover flux in disproportionation redox flow batteries, which exhibits exponential estimation error convergence to a bounded residual set. The crossover flux of vanadium through the porous separator is considered as an unknown function of the battery states, model-approximated as the output of a persistently excited linear system. This parametric model and the simple isothermal lumped parameter model of the battery are combined to form an augmented space state representation suitable for the observer design, which is carried out via Lyapunov stability theory including the error-uncertainty involved in the approximation of the crossover flux. The observer gain is calculated by solving a polytopic linear matrix inequality problem via convex optimization. The performance of this design is evaluated with a laboratory flow battery prototype undergoing self-discharge.",1905.11396v1 2019-06-08,Possible emergence of a skyrmion phase in ferroelectric GaMo$_4$S$_8$,"Polar lacunar spinels, such as GaV$_4$S$_8$ and GaV$_4$Se$_8$, were proposed to host skyrmion phases under magnetic field. In this work, we put forward, as a candidate for N\'eel-type skyrmion lattice, the isostructural GaMo$_4$S$_8$, here systematically studied via both first-principles calculations and Monte Carlo simulations of model Hamiltonian. Electric polarization, driven by Jahn-Teller distortion, is predicted to arise in GaMo$_4$S$_8$, showing a comparable size but an opposite sign with respect to that evaluated in V-based counterparts and explained in terms of different electron counting arguments and resulting distortions. Interestingly, a larger spin-orbit coupling of 4d orbitals with respect to 3d orbitals in vanadium-spinels leads to stronger Dzyaloshinskii-Moriya interactions, which are beneficial to stabilize a cycloidal spin texture, as well as smaller-sized skyrmions (radius<10 nm). Furthermore, the possibly large exchange anisotropy of GaMo4S8 may lead to a ferroelectric-ferromagnetic ground state, as an alternative to the ferroelectric-skyrmionic one, calling for further experimental verification.",1906.03399v1 2019-07-10,Dynamical mean-field study of Vanadium diselenide monolayer ferromagnetism,"To understand the magnetism of VSe$_2$, whose monolayer form has recently been reported to be a room temperature ferromagnet, Here, the combined method of conventional density functional theory with dynamical mean-field theory has been adopted. This higher-level computation method enables us to resolve many of existing controversies and contradictions in between theory and experiment. First of all, this new approach is shown to give the correct magnetic properties of both bulk and two-dimensional limit of VSe$_2$ which demonstrates its superiority to the conventional methods. The results demonstrate that monolayer VSe$_2$ without charge density waves is a ferromagnet with ordering temperature of 250K. From the direct simulation of temperature-dependent magnetic susceptibility and ordered moment, it is shown that its ferromagnetism is clearly two-dimensional in nature. Further, it is shown that this ferromagnetic order is vulnerable to extra charge dopings which provides the important insight to elucidate recent experimental controversies.",1907.04790v3 2019-08-02,Real-Space Investigation of the Charge Density Wave in VTe2 Monolayer with Rotational and Mirror Symmetries Broken,"Recently the charge density wave (CDW) in vanadium dichalcogenides have attracted increasing research interests, but a real-space investigation on the symmetry breaking of the CDW state in VTe2 monolayer is still lacking. We have investigated the CDW of VTe2 monolayer by low energy electron diffraction (LEED) and scanning tunneling microscope (STM). While the LEED experiments revealed a (4X4) CDW transition at 192+-2 K, our low-temperature STM experiments resolved the (4X4) lattice distortions and charge-density modulation in real space, and further unveiled a 1D modulation that breaks the three-fold rotational and mirror symmetries in the CDW state. In accordance with the CDW state at low temperature, a CDW gap of 12 meV was detected by scanning tunneling spectroscopy (STS) at 4.9 K. Our work provides real-space evidence on the symmetry breaking of the (4X4) CDW state in VTe2 monolayer, and implies there is a certain mechanism, beyond the conventional Fermi surface nesting or the q-dependent electron-phonon coupling, is responsible for the formation of CDW state in VTe2 monolayer.",1908.00714v1 2019-08-19,Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling,"Among the perovskite oxide family, KTaO$_3$ (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we improvise a novel conducting interface by juxtaposing KTO with another insulator, namely LaVO$_3$ (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observation of two fold AMR at low magnetic fields can be intuitively understood using a phenomenological theory for a Rashba spin-split system. At high fields ($\sim$8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra. We speculate that it might be generated through an intricate process arising from the interplay between strong spin-orbit coupling, broken inversion symmetery, relativistic conduction electron and possible uncompensated localized vanadium spins.",1908.06636v1 2019-08-27,"A Systematic Study to Improve the Performance of SrCoO3 as anAnion-Intercalation-Type Electrode for Supercapacitors Through Interface, Oxygen Vacancies, and Doping","Supercapacitors have recently gained popularity as possible energy storage systems due to their high cycling ability and increased power density. However, one of the major drawbacks of supercapacitors is that they have a low energy density, which makes them less effective than batteries. Herein, we explore different methods of increasing the supercapacitor performance of the perovskite SrCoO3. We carry out first-principles calculations to systematically study how SrCoO3/graphene interface, oxygen vacancies, and doping improve the performance of strontium cobaltite as an anion-intercalation-type supercapacitor. The results show that the SrCoO3/graphene interface is relatively stable with a formation energy of 1.3 eV and is highly conductive, which makes it a promising material for supercapacitors. We also find that inducing oxygen vacancies in SrCoO3 significantly increases the conductivity of this material. Results of doping calculations reveal that doping with Mo, V, P, and Nb all increase the stability and conductivity of SrCoO3. We find that niobium is the most stable and most conductive of all four dopants. In addition, we find that vanadium is a very promising novel dopant for SrCoO3 as an anion-intercalation-type supercapacitor electrode material.",1908.10494v1 2019-08-31,Magnetocaloric properties of V6 molecular magnet,"The paper presents a theoretical study of magnetocaloric properties of polyoxovanadate molecular magnet V6 containing 6 vanadium ions carrying quantum spins $S = 1/2$. The characteristic property of such structure is the presence of two weakly interacting spin triangles with all-antiferromagnetic couplings. The properties of the system are described using the exact numerical diagonalization approach applied to the quantum Heisenberg model and utilizing a field ensemble formalism. The dependence of the magnetic entropy and magnetic specific heat on the temperature and external magnetic field is calculated and extensively discussed. The magnetocaloric properties are quantified by isothermal entropy change and entropy derivative over the magnetic field. An interesting behaviour of isothermal entropy change is found, with high degree of tunability of the magnetocaloric effect with the initial and final magnetic field values.",1909.00242v2 2019-09-18,"NMR, magnetization, and heat capacity studies of the uniform spin-1/2 chain compound Bi6V3O16","We report the local (NMR) and bulk (magnetization and heat capacity) properties of the vanadium-based S=1/2 uniform spin chain compound Bi6V3O16(Bi4V2O10.66). In the low-temperature {\alpha} phase, the magnetic ions (V4+) are arranged in one-dimensional chains. The magnetic susceptibility shows a broad maximum around 50 K signifying a short-range magnetic order. Heat capacity measurements also reveal low-dimensional magnetism. The 51V magic angle spinning nuclear magnetic resonance measurements clearly show that the magnetic V4+ and nonmagnetic V5+ species are located on different crystallographic sites with no mixed occupation. The spin susceptibility calculated from the shift of the 51V NMR spectra reproduces the behavior observed in magnetic susceptibility and agrees well with the S=1/2 uniform spin chain model with J=113(5) K.",1909.08594v1 2019-09-25,{\textit{Ab initio} determination of pseudospin for paramagnetic defects in SiC,"Paramagnetic point defects in solids may exhibit a rich set of interesting and not yet fully resolved physics. In particular, character of wavefunctions and electron-phonon coupling in these defects may highly influence their interaction with external magnetic fields. Complex interplay between the electronic orbitals, phonons and electron spin determines the effective pseudospin of the system that we demonstrate on vanadium and molybdenum defects in hexagonal silicon carbide (SiC) by means of \textit{ab initio} calculations. In this Rapid Communication, we find a giant anisotropy in the $g$-tensor of these defects with Kramers doublet spin ground state, resulting in reduced and vanishing interaction with the magnetic field in parallel and transverse directions, respectively. The consequences of our finding in the application of these defects for quantum information processing are briefly discussed.",1909.11587v3 2019-10-08,Tunable Multifocal THz Metalens Based on Metal-Insulator Transition of VO2 Film,"Recently, metalenses which consist of metasurface arrays, have attracted attention due to their more condensed size in comparison with conventional lenses. In this paper, we propose a reconfigurable coding metasurface hybridized with vanadium dioxide (VO2) for wavefront manipulation at terahertz (THz) frequencies. At room temperature, the unit-cell can reflect as a ""1"" bit under linearly y polarized illuminated waves. Besides, when the temperature is increased, VO2 would be in a fully metallic state; therefore, unit-cell can act as a ""0"" reflection phase. Furthermore, by changing the unit-cells arrangements on a metalens surface, the proposed device can focus the incident beam at any position according to a particular design. Numerical simulations demonstrate that the designed VO2-assisted metasurface can generate one and multi-focal spot in reflection mode as expected. Also, theoretical results depict an excellent agreement with obtained simulation results. The presented metalens has notable potential in THz high-resolution imaging and optical coding.",1910.03149v1 2019-10-31,Ultrafast reprogrammable multifunctional vanadium-dioxide-assisted metasurface for dynamic THz wavefront engineering,"In this paper, for the first time, a new generation of ultrafast reprogrammable multi-mission bias encoded metasurface is proposed for dynamic THz wavefront engineering by employing VO2 reversible and fast monoclinic to tetragonal phase transition. The multi-functionality of our designed VO2 based coding metasurface (VBCM) was guaranteed by elaborately designed meta-atom comprising three-patterned VO2 thin films whose operational statuses can be dynamically tuned among four states of ""00""- ""11"" by merely changing the biasing voltage controlled by an external FPGA platform. Capitalizing on such meta-atom design and by driving VBCM with different spiral-like and spiral-parabola-like coding sequences, single vortex beam and focused vortex beam with interchangeable OAM modes were satisfactorily generated respectively. Additionally, by adopting superposition theorem and convolution operation, symmetric/asymmetric multiple beams and arbitrarily-oriented multiple vortex beams in pre-demined directions with different topological charges are realized. The versatility of our designed VBCM also has equipped a platform to focus the incident THz wavefront into a pre-determined point which can be dynamically altered. Several illustrative examples successfully have clarified that proposed VBCM is a promising candidate for solving crucial THz challenges such as high data rate wireless communication where ultrafast switching between several missions is required.",1910.14272v1 2019-12-23,Spin-$\frac{1}{2}$ kagome Heisenberg antiferromagnet with strong breathing anisotropy,"We study the zero-temperature phase diagram of the spin-$\frac{1}{2}$ Heisenberg model with breathing anisotropy (i.e., with different coupling strength on the upward and downward triangles) on the kagome lattice. Our study relies on large scale tensor network simulations based on infinite projected entangled-pair state and infinite projected entangled-simplex state methods adapted to the kagome lattice. Our energy analysis suggests that the U(1) algebraic quantum spin-liquid (QSL) ground-state of the isotropic Heisenberg model is stable up to very large breathing anisotropy until it breaks down to a critical lattice-nematic phase that breaks rotational symmetry in real space through a first-order quantum phase transition. Our results also provide further insight into the recent experiment on vanadium oxyfluoride compounds which has been shown to be relevant platforms for realizing QSL in the presence of breathing anisotropy.",1912.10756v2 2020-01-09,High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides,"Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI$_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI$_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.",2001.02846v2 2020-01-10,Electrical and Spectroscopic Properties of SiC Detectors,"In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium doping. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities and we evaluated low mobility-lifetime product (alpha)= 3.5E-7 cm2/V from the alpha spectroscopy. We demonstrate that the 4H-SiC material from the Cree company is the best candidate for the production of radiation detectors. We evaluated mobility-lifetime product (alpha)= 5.4E-6 cm2/V using AuTi/SiC/TiAu contact structure.",2001.03351v1 2020-01-20,Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor,"We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.",2001.06941v1 2020-01-23,Magnetic-field-induced insulator-metal transition in W-doped VO2 at 500 T,"Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has been debated whether electronic correlation or the structural instability due to dimerised V ions is the more essential driving force behind this MI transition. Here, we show that an ultrahigh magnetic field of 500 T renders the insulator phase of tungsten (W)-doped VO2 metallic. The spin Zeeman effect on the d electrons of the V ions dissociates the dimers in the insulating phase, resulting in the delocalisation of electrons. Because the Mott-Hubbard gap essentially does not depend on the spin degree of freedom, the structural instability is likely to be the more essential driving force behind the MI transition.",2001.08580v1 2020-02-10,Dynamic control of mode modulation and spatial multiplexing using hybrid metasurfaces,"Designing reconfigurable metasurfaces that can dynamically control scattered electromagnetic waves and work in the near-infrared (NIR) and optical regimes remains a challenging task, which is hindered by the static material property and fixed structures. Phase change materials (PCMs) can provide high contrast optical refractive indexes at high frequencies between amorphous and crystal states, therefore are promising as feasible materials for reconfigurable metasurfaces. Here, we propose a hybrid metasurface that can arbitrarily modulate the complex amplitude of incident light with uniform amplitude and full $2\pi$ phase coverage by utilizing composite concentric rings (CCRs) with different ratios of gold and PCMs. Our designed metasurface possesses a bi-functionality that is capable of splitting beams or generating vortex beams by thermal switching between metal and semiconductor states of vanadium oxide (VO2), respectively. It can be easily integrated into low loss photonic circuits with an ultra-small footprint. Our metadevice serves as a novel paradigm for active control of beams, which may open new opportunities for signal processing, memory storage, holography, and anti-counterfeiting.",2002.04074v1 2020-02-17,"Structural, electronic, and magnetic properties of Vanadium-based Janus dichalcogenide monolayers: A first-principles study","The structural, electronic, and magnetic properties of VSSe, VSeTe, VSTe monolayers in both 2H and 1T phases are investigated via first-principles calculations. The 2H phase is energetically favorable in VSSe and VSeTe, whereas the 1T phase is lower in energy in VSTe. For V-based Janus monolayers in the 2H phase, calculations of the magnetic anisotropy show an easy-plane for the magnetic moment. As such, they should not exhibit a ferromagnetic phase transition, but instead, a Berezinskii-Kosterlitz-Thouless (BKT) transition. A classical XY model with nearest-neighbor coupling estimates critical temperatures (T$_{BKT}$) ranging from 106 K for VSSe to 46 K for VSTe.",2002.07104v3 2020-03-23,Tracking ultrafast solid-state dynamics using high harmonic spectroscopy,"We establish time-resolved high harmonic generation (tr-HHG) as a powerful spectroscopy for photoinduced dynamics in strongly correlated materials through a detailed investigation of the insulator-to-metal transitions in vanadium dioxide. We benchmark our technique by comparing our measurements to established momentum-resolved ultrafast electron diffraction, and theoretical density functional calculations. Tr-HHG allows distinguishing of individual dynamic channels, including a transition to a thermodynamically hidden phase. In addition, the HHG yield is shown to be modulated at a frequency characteristic of a coherent phonon in the equilibrium monoclinic phase over a wide range of excitation fluences. These results demonstrate that tr-HHG is capable of tracking complex dynamics in solids through its sensitivity to the band structure.",2003.10430v1 2020-04-01,Spectral self-adaptive absorber/emitter for harvesting energy from the sun and outer space,"The sun (~6000 K) and outer space (~3 K) are the original heat source and sink for human beings on Earth. The energy applications of absorbing solar irradiation and harvesting the coldness of outer space for energy utilization have attracted considerable interest from researchers. However, combining these two functions in a static device for continuous energy harvesting is unachievable due to the intrinsic infrared spectral conflict. In this study, we developed spectral self-adaptive absorber/emitter (SSA/E) for daytime photothermal and nighttime radiative sky cooling modes depending on the phase transition of the vanadium dioxide coated layer. A 24-hour day-night test showed that the fabricated SSA/E has continuous energy harvesting ability and improved overall energy utilization performance, thus showing remarkable potential in future energy applications.",2004.00459v1 2020-04-08,The limit of spin lifetime in solid-state electronic spins,"The development of spin qubits for quantum technologies requires their protection from the main source of finite-temperature decoherence: atomic vibrations. Here we eliminate one of the main barriers to the progress in this field by providing a complete first-principles picture of spin relaxation that includes up to two-phonon processes. Our method is based on machine learning and electronic structure theory and makes the prediction of spin lifetime in realistic systems feasible. We study a prototypical vanadium-based molecular qubit and reveal that the spin lifetime at high temperature is limited by Raman processes due to a small number of THz intra-molecular vibrations. These findings effectively change the conventional understanding of spin relaxation in this class of materials and open new avenues for the rational design of long-living spin systems.",2004.04007v1 2020-04-11,Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy,"We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.",2004.05506v1 2020-04-15,Tunable electronic structure and stoichiometry dependent disorder in Nanostructured VO$_x$ films,"We present and discuss an original method to synthesize disordered Nanostructured (NS) VO$_x$ films with controlled stoichiometry and tunable electronic structures. In these NS films, the original lattice symmetry of the bulk vanadium oxides is broken and atoms are arranged in a highly disordered structure . The stoichiometry-dependent disorder as a function of the oxygen concentration has been characterized by in-situ X-ray Absorption Near-Edge Structure (XANES) spectroscopy identifying the spectroscopic fingerprints. Results show structural rearrangements that deviate from the octahedral symmetry with different coexisting disordered phases. The modulation of the electronic structure of the NS films based on the resulted stoichiometry and the quantum confinement in the NS particles are also discussed. We demonstrate the possibility to modulate the electronic structure of VO$_x$ NS films accessing new disordered atomic configurations with a controlled stoichiometry that provides an extraordinary opportunity to match a wide number of technological applications.",2004.07042v1 2020-04-17,High-pressure characterization of multifunctional CrVO4,"The structural stability and physical properties of CrVO4 under compression were studied by X-ray diffraction, Raman spectroscopy, optical absorption, resistivity measurements, and ab initio calculations up to 10 GPa. High-pressure X-ray diffraction and Raman measurements show that CrVO4 undergoes a phase transition from the ambient pressure orthorhombic CrVO4-type structure (Cmcm space group, phase III) to the high-pressure monoclinic CrVO4-V phase, which is isomorphic to the wolframite structure. Such a phase transition (CrVO4-type - wolframite), driven by pressure, also was previously observed in indium vanadate. The crystal structure of both phases and the pressure dependence in unit-cell parameters, Raman-active modes, resistivity, and electronic band gap, is reported. Vanadium atoms are sixth-fold coordinated in the wolframite phase, which is related to the collapse in the volume at the phase transition. Besides, we also observed drastic changes in the phonon spectrum, a drop of the band-gap, and a sharp decrease of resistivity. All the observed phenomena are explained with the help of first-principles calculations.",2004.08072v1 2020-05-06,Correlation induced emergent charge order in metallic vanadium dioxide,"Recent progress in growth and characterization of thin-film VO$_2$ has shown its electronic properties can be significantly modulated by epitaxial matching. To throw new light on the concept of `Mott engineering', we develop a symmetry-consistent approach to treat structural distortions and electronic correlations in epitaxial VO$_2$ films under strain, and compare our design with direct experimental probes. We find strong evidence for the emergence of correlation-driven charge order deep in the metallic phase, and our results indicate that exotic phases of VO$_2$ can be controlled with epitaxial stabilization.",2005.02957v1 2020-05-20,Frequency mixing in a ferrimagnetic sphere resonator,"Frequency mixing in ferrimagnetic resonators based on yttrium and calcium vanadium iron garnets (YIG and CVBIG) is employed for studying their nonlinear interactions. The ferrimagnetic Kittel mode is driven by applying a pump tone at a frequency close to resonance. We explore two nonlinear frequency mixing configurations. In the first one, mixing between a transverse pump tone and an added longitudinal weak signal is explored, and the experimental results are compared with the predictions of the Landau-Zener-Stuckelberg model. In the second one, intermodulation measurements are employed by mixing pump and signal tones both in the transverse direction for studying a bifurcation between a stable spiral and a stable node attractors. Our results are applicable for developing sensitive signal receivers with high gain for both the radio frequency and the microwave bands.",2005.09864v1 2020-06-18,Switchable bifunctional metasurfaces: nearly perfect retroreflection and absorption at THz regime,"Here we make use of vanadium dioxide (VO2) to design a bifunctional metasurface working at the same targeted frequency. With the increase of temperature, the functionality of the designed metasurface can switch from a multi-channel retroreflector to a perfect absorber, caused by the phase transition of VO2 from insulator to conductor. Different from traditional bifunctional metasurfaces designed by simple composition of two functionalities, our proposed bifunctional metasurface is based on the interaction between two functionalities. The device shows good potential for the combination of wavefront manipulation and optical absorption, therefore providing a promising approach for switchable detection and anti-detection devices.",2006.10229v1 2020-06-15,Influence of Ti/V Cation-Exchange in Na$_2$Ti$_3$O$_7$ on Na-Ion Negative Electrode Performance: an Insight from First-Principles Study,"Sodium-titanate \ce{Na2Ti3O7} (NTO) is regarded as a highly promising anode material with a very low voltage for Na-ion batteries and capacitors, but suffered from relatively low specific capacity and poor electron conductivity. Here we report a first-principles study of electrochemical properties of NTO and its vanadium-modified compounds, \ce{Na2Ti2VO7} and \ce{Na2TiV2O7} (NTVO), offering an insight into their detailed working mechanism and an evidence of enhancing anode performance by Ti/V cation exchange. Our calculations reveal that the specific capacity can increase from 177 mAh g$^{-1}$ in NTO to over 280 mAh g$^{-1}$ in NTVO when using \ce{NaTi_{3-$x$}V_{$x$}O7} ($x$ = 1, 2) as a starting material for Na insertion due to higher oxidation state of \ce{V^{+5}}, together with lower voltages and small volume expansion rates below 3\%. With Ti/V exchange, we obtain slightly higher activation energies for Na ion migrations along the two different pathways, but find an obvious improvement of electronic transport in NTVO.",2006.10669v1 2020-07-08,Non-contact Thermal Transistor Effects Modulated by Nanoscale Mechanical Deformation,"Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of heat, and thermal rectifiers, such as the thermal transistor, have been proposed as units for modulating the flow of heat. In this work, a reconfigurable non-contact thermal transistor with two-dimensional grating is introduced. The thermal transistor consists of three parts: source, gate, and drain, with the gate working around the phase-transition temperature of vanadium dioxide, a type of phase-transition material. Results show that the unit has a clear transistor-like behavior. The surface phonon/plasmon polaritons supported by the insulating/metallic states that contribute to the radiative thermal transport can be modulated at a nanoscale separation. And the dynamic amplification factor ranges from 15.4 to 30.6 when the stretchable polydimethylsiloxane is subjected to tension or compression. This work sheds light on studies about the controllable small-scale thermal transport due to mechanical deformations.",2007.03889v1 2020-07-14,High pressure crystal structures of orthovanadates and their properties,"Pressure-induced phase transitions in orthovanadates have led to interesting physical phenomena. The observed transitions usually involve large volume collapses and drastic changes in the electronic and vibrational properties of the materials. In some cases, the phase transitions implicate coordination changes in vanadium, which has important consequences in the physical properties of vanadates. In this Perspective, we explore the current knowledge of the behavior of MVO4 vanadates under compression. In particular, we summarize studies of the structural, vibrational, and electronic properties and a few illustrative examples of high-pressure research in the compounds of interest are discussed. A systematic understanding of the high-pressure behavior of MVO4 compounds is presented, putting the emphasis on results that could be relevant for practical applications. Recent advances and future challenges in the study of orthovanadates under extreme pressure will be reviewed, along with conclusions that could have consequences for the studies of related oxides. Some ideas on topics that may lead to exciting breakthroughs in the near future will be presented too.",2007.07146v1 2020-07-15,Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide,"Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful post-annealing treatment at high temperature in air or oxygen atmosphere. However, the annealing conditions is difficult to control and the removal of VO in bulk phase is restrained due to high energy barrier of VO migration. Here, we selected VO2 crystal film as the model system and developed an alternative annealing treatment aided by controllable hydrogen doping, which can realizes effective removal of VO defects in VO2-{\delta} crystal at lower temperature. This finding is attributed to the hydrogenation accelerated oxygen vacancies recovery in VO2-{\delta} crystal. Theoretical calculations revealed that the H-doping induced electrons are prone to accumulate around the oxygen defects in VO2-{\delta} film, which facilitates the diffusion of VO and thus makes it easier to be removed. The methodology is expected to be applied to other metal oxides for oxygen-related point defects control.",2007.07505v1 2020-07-15,Janus Monolayers of Magnetic Transition Metal Dichalcogenides as an All-in-One Platform for Spin-Orbit Torque,"We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. The spin-orbit torque efficiency is evaluated using optimized quantum transport methodology and found to be comparable to heavy nonmagnetic metals. The coexistence of magnetism and spin-orbit coupling in such materials with tunable Fermi-level opens new possibilities for monitoring magnetization dynamics in the perspective of non-volatile magnetic random access memories.",2007.07579v1 2020-07-15,Nanoscale axial position and orientation measurement of hexagonal boron nitride quantum emitters using a tunable nanophotonic environment,"Color centers in hexagonal boron nitride (hBN) have emerged as promising candidates for single-photon emitters (SPEs) due to their bright emission characteristics at room temperature. In contrast to mono- and few-layered hBN, color centers in multi-layered flakes show superior emission characteristics such as higher saturation counts and spectral stability. Here, we report a method for determining both the axial position and three-dimensional dipole orientation of SPEs in thick hBN flakes by tuning the photonic local density of states using vanadium dioxide (VO2), a phase change material. Emitters under study exhibit a strong surface-normal dipole orientation, providing some insight on the atomic structure of hBN SPEs, deeply embedded in thick crystals. We have optimized a hot pickup technique to reproducibly transfer flakes of hBN from VO2 onto SiO2/Si substrate and relocated the same emitters. Our approach serves as a practical method to systematically characterize SPEs in hBN prior to integration in quantum photonics systems.",2007.07811v2 2020-07-22,Temporal dynamics of all-optical switching in hybrid VO2/Si waveguides,"Vanadium dioxide (VO2) is one of the most promising materials for developing hybrid photonic integrated devices (PICs). However, despite switching times as low as a few femtoseconds have been reported, the all-optical temporal dynamics of VO2 embedded in a waveguide using an in-plane optical signal remain still hidden. Here, we experimentally investigate this behavior in hybrid VO2/Si waveguides by using pump-probe measurements at telecom wavelengths. Our results show switching times in the micro and nanosecond range, suggesting that the phase transition is triggered thermally from the light absorbed by the VO2 and the temporal response is governed by thermal conductive dynamics. By properly engineering the optical pulse, we prospect switching times of nanoseconds with an energy consumption of a few nanojoules. Our results unveil a new temporal dynamic that would be useful for developing future all-optical VO2 photonic integrated devices.",2007.11452v1 2020-08-06,Decay scheme of 50V,"Investigation of the $^{50}$V electron-capture to the $2^+$ 1553.8 keV level of $^{50}$Ti and search for $\beta^-$ decay of $^{50}$V to the $2^+$ 783.3 keV level of $^{50}$Cr (both those decays are fourfold forbidden with $\Delta J^{\Delta \pi}=4^+$) have been performed using a vanadium sample of natural isotopic abundance with mass of 955 g. The measurements were conducted with the help of an ultra low-background HPGe-detector system located 225 m underground in the laboratory HADES (Belgium). The measured value of the half-life of $^{50}$V for electron capture was $T^{\mathrm{EC}}_{1/2}=(2.77^{+0.20}_{-0.19})\times 10^{17}$ yr. The $\beta^-$-decay branch was not detected and the corresponding lower bound of the half-life was $T^{\beta}_{1/2}\geq 8.9\times 10^{18}$ yr at the 90\% confidence level.",2008.02751v1 2020-09-16,Properties and influence of microstructure and crystal defects in Fe$_2$VAl modified by laser surface remelting,"Laser surface remelting can be used to manipulate the microstructure of cast material. Here, we present a detailed analysis of the microstructure of Fe$_2$VAl following laser surface remelting. Within the melt pool, elongated grains grow nearly epitaxially from the heat-affected zone. These grains are separated by low-angle grain boundaries with 1{\deg}-5{\deg} misorientations. Segregation of vanadium, carbon, and nitrogen at grain boundaries and dislocations is observed using atom probe tomography. The local electrical resistivity was measured by an in-situ four-point-probe technique. A smaller increase in electrical resistivity is observed at these low-angle grain boundaries compared to high-angle grain boundaries in a cast sample. This indicates that grain boundary engineering could potentially be used to manipulate thermoelectric properties.",2009.07685v2 2020-09-29,Cascaded superconducting junction refrigerators: optimization and performance limits,"We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we develop an approximate method that takes into account self-heating effects but still allows us to optimize the cascade a single stage at a time. We design a cascade consisting of energy-efficient refrigeration stages, which makes cooling of, e.g., quantum devices from above 1 K to below 100 mK a realistic experimental target.",2009.14166v3 2020-10-12,Electron beam modification of vanadium dioxide oscillators,"The paper presents the results of a study of electron-beam modification (EBM) of VO2-switch I-V curve threshold parameters and the self-oscillation frequency of a circuit containing such a switching device. EBM in vacuum is reversible and the parameters are restored when exposed to air at pressure of 150 Pa. At EBM with a dose of 3 C/cm2, the voltages of switching-on (Vth) and off (Vh), as well as the OFF-state resistance Roff, decrease down to 50% of the initial values, and the oscillation frequency increases by 30% at a dose of 0.7 C/cm2. Features of physics of EBM of an oscillator are outlined considering the contribution of the metal and semiconductor phases of the switching channel. Con-trolled modification allows EBM forming of switches with preset parameters. Also, it might be used in artifi-cial oscillatory neural networks for pattern recognition based on frequency shift keying.",2010.05460v1 2020-10-23,Observation of photoelectric nonvolatile memory and oscillations in VO2 at room temperature,"Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room temperature, and nonvolatile memory has required non-ambient surroundings (e.g., elevated temperatures, electrolytes) and long write times. Here, we report the first observation of optically addressable nonvolatile memory in VO2 at room temperature with a readout by voltage oscillations. The read and write times had to be kept shorter than about 150 {\mu}s. The writing of the memory and onset of the voltage oscillations had a minimum optical power threshold. This discovery demonstrates the potential of VO2 for new computing devices and architectures, such as artificial neurons and oscillatory neural networks.",2010.12531v1 2020-11-09,Multifocal Terahertz Lens with Adjustable Focal Points,"The conventional lens's tunability drawback always restricts their application compared to the metasurface lens (metalens). On the other side, reconfigurable metalenses offer the benefits of ultrathin thickness and capable of tunability. Therefore achieving reconfigurable functionalities in a single metasurface has attracted significant research interest for potential terahertz (THz) applications. In this paper, an adjustable metasurface is presented using Vanadium dioxide (VO2) to manipulate the electromagnetic waves and provide the full reflection phase. The phase-change metasurface is composed of a VO2 nanofilm, a silicon spacer, and a gold layer embedded in the structure's bottom. By employing the reconfigurable metasurface with the specific phase distribution, the incident beam can converge to determined points in any arbitrary manner, including the number of the focal points, focal points location, and power intensity ratio. Numerical simulations demonstrate that the proposed reconfigurable metasurface can concentrate power on one or more than one focal point in reflection modes as expected. Additionally, the VO2-based metasurface can control concentration width in a real-time manner using a novel proposed method. The simulation and theoretical results are in good agreement to verify the validity and feasibility of 2-bit metalens design, which has considerable potential in wireless high-speed communication and super-resolution imaging.",2011.04790v1 2020-12-11,A reflective mm-wave photonic limiter,"Millimeter wave (mm-wave) communications and radar receivers capable of processing small signals must be protected from high-power signals, which can damage sensitive receiver components. Many of these systems arguably can be protected by using photonic limiting techniques, in addition to electronic limiting circuits in receiver front-ends. Here we demonstrate, experimentally and numerically, a free-space, reflective mm-wave limiter based on a multilayer structure involving a nanolayer of vanadium dioxide (VO2), experiencing a thermal insulator-to-metal transition. The multilayer acts as a variable reflector, controlled by the input power. At low input power levels, VO2 remains dielectric, and the multilayer exhibits resonant transmittance. When the input power exceeds a threshold level, the emerging metallic phase renders the multilayer highly reflective while dissipating a small portion of the input power without damage to the limiter. In the case of a Gaussian beam, the limiter has a nearly constant output above the limiting threshold input.",2012.07631v1 2020-12-23,Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature,"Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magn\'eli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations.",2012.13009v1 2021-01-12,Tuning the Magnetic and Electronic Properties of Monolayer VI3 by 3d Transition Metal Doping: A First-Principles Study,"Two-dimensional (2D) materials with robust magnetism have drawn immense attention for their promising applications in spintronics. Recently, intrinsic ferromagnetic vanadium triiodide (VI3) has been synthesized experimentally. To enhance its spintronic property, we modified VI3 by interstitial doping with 3d transition metals (TM) and used first-principles calculations to investigate the geometric structure, formation energy, electronic property, and magnetism of pristine VI3 and 3d TM-doped VI3 monolayer. Among eight transition metal (Sc-, Ti-, V-, Cr-, Mn-, Fe-, Co-, and Ni-) doped VI3 materials, four of them (Ti-, V-, Mn-, and Ni-doped VI3) show robust magnetism with full spin polarization near the Fermi energy. Our research demonstrates that Ti-doped VI3 results in half-metallic semiconductor properties (HMS), while V-doped VI3 and Ni-doped VI3 result in half-semiconductor properties (HSC). Surprisingly, Mn-doped VI3 exhibits an unusual bipolar magnetic semiconductor property (BMS). This unique combination of strong ferromagnetism and 100% spin polarization with a half-metallic, half-semiconductor, or bipolar semiconductor property renders 3d TM-doped VI3 as potential candidates for next generation semiconductor spintronic applications. These spin-polarized materials will be extremely useful for spin-current generation and other spintronic applications.",2101.05071v2 2021-01-17,Quantifying residual stress in Helium implanted surfaces and its implication for blistering,"Helium implantation in surfaces is of interest for plasma facing materials and other nuclear applications. Vanadium as both a representative bcc material and a material relevant for fusion applications is implanted using a Helium ion beam microscope, and the resulting swelling and nanomechanical properties are quantified. These values are put in correlation to data obtained from micro residual stress measurements using a focused ion beam based ring-core technique. We found that the swelling measured is similar to literature values. Further we are able to measure the surface stress caused by the implantation and find it approaches the yield strength of the material at blistering doses. The simple calculations performed in the present work, along with several geometrical considerations deduced from experimental results confirm the driving force for blister formation comes from bulging resulting mainly from gas pressure buildup, rather than solely stress induced buckling.",2101.06780v1 2021-01-18,Casimir-Polder Interaction of an Atom with a Cavity Wall Made of Phase-Change Material out of Thermal Equilibrium,"We consider the out-of-thermal-equilibrium Casimir-Polder interaction between atoms of He$^*$, Na, Cs, and Rb and a cavity wall made of sapphire coated with a vanadium dioxide film which undergoes the dielectric-to-metal phase transition with increasing wall temperature. Numerical computations of the Casimir-Polder force and its gradient as the functions of atom-wall separation and wall temperature are made when the latter exceeds the temperature of the environment. The obtained results are compared with those in experiment on measuring the gradient of the Casimir-Polder force between $^{87}$Rb atoms and a silica glass wall out of thermal equilibrium. It is shown that the use of phase-change wall material increases significantly the force magnitude and especially the force gradient, as opposed to the case of dielectric wall.",2101.06995v1 2021-01-28,Optically tunable Mie-resonance VO2 nanoantennas for metasurfaces in the visible,"Metasurfaces are ultrathin nanostructured surfaces that can allow arbitrary manipulation of light. Implementing dynamic tunability into their design could allow the optical functions of metasurfaces to be rapidly modified at will. The most pronounced and robust tunability of optical properties is provided by phase-change materials such as vanadium dioxide (VO2) and germanium antimony telluride (GST), but their implementations have been limited only to near-infrared wavelengths. Here, we demonstrate that VO2 nanoantennas with widely tunable Mie resonances can be utilized for designing tunable metasurfaces in the visible range. In contrast to the dielectric-metallic phase transition-induced tunability in previous demonstrations, we show that dielectric Mie resonances in VO2 nanoantennas offer remarkable scattering and extinction modulation depths (5-8 dB and 1-3 dB, respectively) for tunability in the visible. Moreover, these strong resonances are optically switchable using a continuous-wave laser. Our results establish VO2 nanostructures as low-loss building blocks of optically tunable metasurfaces.",2101.12283v1 2021-02-11,Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction,"Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide switches. We discover an electrically-triggered, isostructural state that forms transiently on microsecond timescales, stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase bears striking similarity to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway across eight orders of magnitude of timescale. Our results establish a new route for uncovering non-equilibrium and metastable phases in correlated materials, and open avenues for engineering novel dynamical behavior in nanoelectronics.",2102.06013v1 2021-02-16,Materials genes of heterogeneous catalysis from clean experiments and artificial intelligence,"Heterogeneous catalysis is an example of a complex materials function, governed by an intricate interplay of several processes, e.g., the different surface chemical reactions, and the dynamic re-structuring of the catalyst material at reaction conditions. Modelling the full catalytic progression via first-principles statistical mechanics is impractical, if not impossible. Instead, we show here how a tailored artificial-intelligence approach can be applied, even to a small number of materials, to model catalysis and determine the key descriptive parameters (""materials genes"") reflecting the processes that trigger, facilitate, or hinder catalyst performance. We start from a consistent experimental set of ""clean data"", containing nine vanadium-based oxidation catalysts. These materials were synthesized, fully characterized, and tested according to standardized protocols. By applying the symbolic-regression SISSO approach, we identify correlations between the few most relevant materials properties and their reactivity. This approach highlights the underlying physicochemical processes, and accelerates catalyst design.",2102.08269v1 2021-02-19,Slow dynamics of disordered zigzag chain molecules in layered LiVS2 under electron irradiation,"Electronic instabilities in transition metal compounds often spontaneously form orbital molecules, which consist of orbital-coupled metal ions at low temperature. Recent local structural studies utilizing the pair distribution function revealed that preformed orbital molecules appear disordered even in the high-temperature paramagnetic phase. However, it is unclear whether preformed orbital molecules are dynamic or static. Here, we provide clear experimental evidence of the slow dynamics of disordered orbital molecules realized in the high-temperature paramagnetic phase of LiVS2, which exhibits vanadium trimerization upon cooling below 314 K. Unexpectedly, the preformed orbital molecules appear as a disordered zigzag chain that fluctuate in both time and space under electron irradiation. Our findings should advance studies on soft matter physics realized in an inorganic material due to disordered orbital molecules.",2102.09795v1 2021-03-06,Thin-film radiative thermal diode with large rectification,"We propose a mechanism to substantially rectify radiative heat flow by matching thin films of metal-to-insulator transition materials and polar dielectrics in the electromagnetic near field. By leveraging the distinct scaling behaviors of the local density of states with film thickness for metals and insulators, we theoretically achieve rectification ratios over 140-a 10-fold improvement over the state of the art-with nanofilms of vanadium dioxide and cubic boron nitride in the parallel-plane geometry at experimentally feasible gap sizes (~100 nm). Our rational design offers relative ease of fabrication, flexible choice of materials, and robustness against deviations from optimal film thicknesses. We expect this work to facilitate the application of thermal diodes in solid-state thermal circuits and energy conversion devices.",2103.04035v1 2021-03-29,"Stability, electronic structure, and magnetic moment of Vanadium phthalocyanine grafted to the Au(111) surface","The studies of electronic and magnetic properties of V-Pc molecule adsorbed onto Au(111) surface are based on ab-initio calculations in the framework of density functional theory. We compute adsorption energies, investigate interaction mechanisms between constituents of the hybrid system consisting of V-Pc molecule and Au surface, and determine geometry changes in the system, particularly in the grafted molecule. We find out that the energetically most stable configuration of the V-Pc/Au(111) occurs when V-Pc is grafted to the Au surface's fcc site, which leads to the reduction of the point group symmetry of the hybrid system in comparison to the free standing V-Pc molecule. Further, our studies reveal that the electronic structure and magnetic properties of the V-Pc change significantly after adsorption to the Au(111). Generally, these studies shed light on physical mechanisms of the V-Pc adsorption to metallic surfaces and open up new prospects for design of novel spintronic devices.",2103.15639v1 2021-04-06,Electronic structure and charge-density wave transition in monolayer VS_{2},"Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal that Fermi surface with six elliptical pockets centered at the M points shows gap opening at low temperature. Temperature-dependence of the gap size suggests existence of CDW phase transition above room temperature. Our observations provide important evidence to understand the strongly correlated electron physics and the related surface catalytic properties in two-dimensional transition-metal dichalcogenides (TMDCs).",2104.02217v1 2021-04-08,A short-range structural insight into lithium substituted barium vanadate glasses using Raman and EPR spectroscopy as probes,"We present a corroborative study of structural characterization of lithium substituted barium vanadate glasses using Raman and Electron Paramagnetic Resonance (EPR) spectroscopy. Investigation of the thermal and physical properties of these glasses showed a gradual increase in the concentration of non-bridging oxygen. Raman and EPR analysis gave an insight into the changing structure of the glasses. Both the spectroscopic techniques confirmed that vanadium is present in the glasses as distorted VO6 octahedra. From the analysis of both spectroscopic techniques, it is proposed that the lithium ion prefers to occupy planar positions of the VO6 octahedra thus reducing the tetragonal distortion and making the environment around the network forming unit in the glass matrix more homogenous as we increase lithium content. The concentration of V4+ showed a non-monotonic variation with an increase in Li2O as indicated by Raman studies and confirmed by EPR which indicates a structural change in the distorted VO6 octahedra.",2104.03592v2 2021-04-16,Electronic and magnetic properties of VOCl/FeOCl antiferromagnetic heterobilayers,"We study the electronic properties of the heterobilayer of vanadium and iron oxychlorides, VOCl and FeOCl, two layered air stable van der Waals insulating oxides with different types of antiferromagnetic order in bulk: VOCl monolayers are ferromagnetic (FM) whereas the FeOCl monolayers are antiferromagnetic (AF). We use density functional theory (DFT) calculations, with Hubbard correction that is found to be needed to describe correctly the insulating nature of these compounds. We compute the magnetic anisotropy and propose a spin model Hamiltonian. Our calculations show that interlayer coupling in weak and ferromagnetic so that magnetic order of the monolayers is preserved in the heterobilayers providing thereby a van der Waals heterostructure that combines two monolayers with different magnetic order. Interlayer exchange should lead both to exchange bias and to the emergence of hybrid collective modes that that combine FM and AF magnons. The energy band of the heterobilayer show a type II band alignment, and feature spin-splitting of the states of the AF layer due to the breaking of the inversion symmetry.",2104.08214v1 2021-04-29,Reconfigurable Multistate Optical Systems Enabled by VO2 Phase Transitions,"Reconfigurable optical systems are the object of continuing, intensive research activities, as they hold great promise for realizing a new generation of compact, miniaturized, and flexible optical devices. However, current reconfigurable systems often tune only a single state variable triggered by an external stimulus, thus, leaving out many potential applications. Here we demonstrate a reconfigurable multistate optical system enabled by phase transitions in vanadium dioxide (VO2). By controlling the phase-transition characteristics of VO2 with simultaneous stimuli, the responses of the optical system can be reconfigured among multiple states. In particular, we show a quadruple-state dynamic plasmonic display that responds to both temperature tuning and hydrogen-doping. Furthermore, we introduce an electron-doping scheme to locally control the phase-transition behavior of VO2, enabling an optical encryption device encoded by multiple keys. Our work points the way toward advanced multistate reconfigurable optical systems, which substantially outperform current optical devices in both breadth of capabilities and functionalities.",2104.14232v1 2021-05-06,Optical forces on an oscillating dipole near VO$_2$ phase transition,"We investigate optical forces on oscillating dipoles close to a phase-change vanadium dioxide (VO$_2$) film, which exhibits a metal-insulator transition around $340$ K and low thermal hysteresis. This configuration is related to one composed of an excited two-level quantum emitter and we employ a classical description to capture important aspects of the radiation-matter interaction. We consider both electric and magnetic dipoles for two different configurations, namely, with the dipole moments parallel and perpendicular to the VO$_2$ film. By using Bruggeman theory to describe the effective optical response of the material, we show that, in the near-field regime, the force on the dipoles can change from attractive to repulsive just by heating the film for a selected frequency range. We demonstrate that the thermal hysteresis present in the VO$_2$ transition clearly shows up in the behavior of the optical forces, setting the grounds for alternative approaches to control light-matter interactions using phase-change materials.",2105.02493v1 2021-05-13,Enhanced passive thermal stealth properties of VO$_2$ thin films via gradient W doping,"Thermal stealth and camouflage have been intensively studied for blending objects with their surroundings against remote thermal image detection. Adaptive control of infrared emissivity has been explored extensively as a promising way of thermal stealth, but it still requires an additional feedback control. Passive modulation of emissivity, however, has been remained as a great challenge which requires a precise engineering of emissivity over wide temperature range. Here, we report a drastic improvement of passive camouflage thin films capable of concealing thermal objects at near room temperature without any feedback control, which consists of a vanadium dioxide (VO2) layer with gradient tungsten (W) concentration. The gradient W-doping widens the metal-insulator transition width, accomplishing self-adaptive thermal stealth with a smooth change of emissivity. Our simple approach, applicable to other similar thermal camouflage materials for improving their passive cloaking, will find wide applications, such as passive thermal camouflage, urban energy-saving smart windows, and improved infrared sensors.",2105.06063v1 2021-05-20,Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$,"We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit.",2105.10022v1 2021-06-21,Physics-constrained deep neural network method for estimating parameters in a redox flow battery,"In this paper, we present a physics-constrained deep neural network (PCDNN) method for parameter estimation in the zero-dimensional (0D) model of the vanadium redox flow battery (VRFB). In this approach, we use deep neural networks (DNNs) to approximate the model parameters as functions of the operating conditions. This method allows the integration of the VRFB computational models as the physical constraints in the parameter learning process, leading to enhanced accuracy of parameter estimation and cell voltage prediction. Using an experimental dataset, we demonstrate that the PCDNN method can estimate model parameters for a range of operating conditions and improve the 0D model prediction of voltage compared to the 0D model prediction with constant operation-condition-independent parameters estimated with traditional inverse methods. We also demonstrate that the PCDNN approach has an improved generalization ability for estimating parameter values for operating conditions not used in the DNN training.",2106.11451v2 2021-06-24,Dynamic quarter-wave metasurface for efficient helicity inversion of polarization beyond the single-layer conversion limit,"Terahertz chiral sensing and polarization-multiplexing communication demand subwavelength devices that dynamically invert polarization helicity. Metasurfaces can enhance anisotropy and fine tunability at subwavelength scales for this purpose. Although metasurfaces enabling deep modulation between orthogonal polarizations have been designed, they suffer from low conversion efficiencies. In this study, it is shown that the efficiency of conversion from linear to circular polarization by conventional single-layer transmissive metasurfaces cannot exceed a fundamental limit. A dynamic reflective metasurface free from this limitation is then proposed. The device includes multilayer structures working as a terahertz quarter-wave plate with switchable slow and fast axes. A phase transition of vanadium dioxide induces the necessary structural transformation of the metallic patterns. A practical fabrication method, based on the room-temperature bonding technique of sapphires, is presented. Dynamic helicity inversion is demonstrated at 0.90 THz, with a conversion efficiency of over 80 % that is beyond the fundamental limit of single-layer transmissive metasurfaces (65 %) and more than four times greater than that of previously reported devices.",2106.12932v2 2021-07-16,First principles studies of the electronic and structural properties of the rutile VO$_{2}$(110) surface and its oxygen-rich terminations,"We present a Density Functional Theory (DFT) study of the structural and electronic properties of bare rutile VO$_{2}$(110) surfaces and its oxygen-rich terminations. We discuss the performance of various DFT functionals, including PBE, PBE+U (U = 2 eV), SCAN and SCAN+rVV functionals with non-magnetic and ferromagnetic spin ordering. We predict the presence of a ring-like termination that is electronically and structurally related to a V$_{2}$O$_{5}$(001) monolayer and shows a higher stability than pure oxygen adsorption phases. Despite the fact that the calculated phase stabilities depend on the chosen functional, our results show that employing the spin-polarized SCAN functional offers a good compromise yielding both a reasonable description of the structural and electronic properties of the rutile VO$_{2}$ bulk phase and the enthalpy of formation for different stages of vanadium oxidation.",2107.07899v1 2021-07-29,New results on proton-induced reactions on Vanadium for $^{47}$Sc production and the impact of level densities on theoretical cross sections,"New data for the $^\mbox{nat}$V(p,x) reactions have been measured in the range 26-70 MeV, with production of the nuclides $^{47}$Sc, $^{43}$Sc, $^{44m}$Sc, $^{44g}$Sc, $^{46}$Sc, $^{48}$Sc, $^{42}$K, $^{43}$K, $^{48}$V, $^{48}$Cr, $^{49}$Cr, and $^{51}$Cr. The focus is on the production of $^{47}$Sc, a $\beta^-$-emitter suitable for innovative radiotheranostic applications in nuclear medicine. The measured cross sections for this radionuclide and its contaminants are compared with the theoretical excitation functions calculated with the TALYS code. In view of novel radiopharmaceutical applications, it is essential to accurately describe these cross-sections for the evaluation of yields, purities, and dose releases. Hence, we optimize the level-density parameters of the microscopic models in the TALYS code to obtain the best possible descriptions of the new data. We consider different irradiation conditions to estimate the production yields from the cross sections determined in this work.",2107.13773v1 2021-08-13,An Optimized Self-Adaptive Thermal Radiation Turn-Down Coating with Vanadium Dioxide Nanowire Array,"High performance metasurfaces for thermal radiative cooling applications can be identified using computational optimization methods. This work has identified an easy-to-fabricate temperature phase transition VO2 nanowire array laid atop dielectric BaF2 Fabry-Perot cavity-on-metal with total coating thickness of 2 um. This optimized structure has ability to self-adaptively switch between high reflectance at low temperature to high emissivity at high temperature in the broad thermal infrared spectrum. This design demonstrates exceptional turn-down figure-of-merit compared to previously realized configurations utilizing VO2 metasurfaces and multilayers. The mechanism is achieved with a sub-wavelength nanowire array effective medium that switches between anti-reflecting gradient coating and Fabry-Perot interference. This thin metasurface coating could impact self-cooling of the solar cells, batteries, and electrical devices where risk presents at high temperatures.",2108.06013v1 2021-08-24,Higher-order topological superconductivity from repulsive interactions in kagome and honeycomb systems,"We discuss a pairing mechanism in interacting two-dimensional multipartite lattices that intrinsically leads to a second order topological superconducting state with a spatially modulated gap. When the chemical potential is close to Dirac points, oppositely moving electrons on the Fermi surface undergo an interference phenomenon in which the Berry phase converts a repulsive electron-electron interaction into an effective attraction. The topology of the superconducting phase manifests as gapped edge modes in the quasiparticle spectrum and Majorana Kramers pairs at the corners. We present symmetry arguments which constrain the possible form of the electron-electron interactions in these systems and classify the possible superconducting phases which result. Exact diagonalization of the Bogoliubov-de Gennes Hamiltonian confirms the existence of gapped edge states and Majorana corner states, which strongly depend on the spatial structure of the gap. Possible applications to vanadium-based superconducting kagome metals AV$_3$Sb$_3$ (A=K,Rb,Cs) are discussed.",2108.10897v2 2021-09-14,Phase Stability and Sodium-Vacancy Orderings in a NaSICON Electrode,"We elucidate the thermodynamics of sodium (Na) intercalation into the sodium super-ionic conductor (NaSICON)-type electrode, Na$_x$V$_2$(PO$_4$)$_3$, for promising Na-ion batteries with high-power density. This is the first report of a computational temperature-composition phase diagram of the NaSICON-type electrode Na$_x$V$_2$(PO$_4$)$_3$. We identify two thermodynamically stable phases at the compositions Na$_2$V$_2$(PO$_4$)$_3$ and Na$_{3.5}$V$_2$(PO$_4$)$_3$, and their structural features are described for the first time based on our computational analysis. We unveil the crystal-structure and the electronic-structure origins of the ground-state compositions associated with specific Na/vacancy arrangements, which are driven by charge orderings on the vanadium sites. These results are significant for the optimization of high-energy and power densities electrodes for sustainable Na-ion batteries",2109.06997v1 2021-10-14,TRACK: A python code for calculating the transport properties of correlated electron systems using Kubo formalism,"Exploring the transport properties of different materials brings new avenue for basic understanding of emergent phenomena and practical applications in many different fields. Here, we report a program named as TRACK (TRAnsport properties for Correlated materials using Kubo formalism) which is written in Python 3 for calculating temperature dependent electrical conductivity, electronic part of thermal conductivity, Seebeck coefficient and Lorenz number. In this code, Kubo linear-response formalism is utilized for computing these parameters using both interacting and non-interacting electronic structure methods. The formula for transport coefficients is accordingly modified to obtain the transport parameters under relaxation time approximation using band-theory. The basic inputs of this program are the structural information, dense k-points sampling in the irreducible part of the Brillouin zone and the information of velocity matrix elements, which can be calculated using third-party ab-initio package. TRACK is expected to calculate the transport properties of different class of materials. The code has been benchmarked by performing calculation on three different types of materials namely Vanadium (V), FeSi and LaCoO$_3$, which are metal, semiconductor and Mott insulator, respectively. The temperature dependent behaviour of the transport coefficients for these materials show fairly good agreement with the corresponding experimental data.",2110.07243v1 2021-12-05,Uniting the order and disorder dynamics in photoexcited VO2,"Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory (rt-TDDFT) method, here, we track the motion of individual vanadium (V) ions during PIPT in VO2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.",2112.02463v1 2021-12-08,Precise design of VO2 thin films for smart windows by employing thickness dependent refractive index,"Vanadium dioxide (VO2) is an adjustable refractive index material and has capability of behaving as semiconductor or conductor depending on its temperature. Such condition makes it as a material which can be employed in fabricating thermochromic smart windows. The transmission characteristics of these type of windows strongly depend on the thickness of the film. Therefore, some calculations are required to optimize the VO2 thickness. Unfortunately, refractive index of VO2 thin film is thickness dependent, therefore, in calculating the transmission of light spectrum from VO2 thin films, a unique refractive index cannot be utilized. In the present paper using three theoretical models (Lorentz-Drude oscillator, Lorentz oscillator, and Tauc-Lorentz) and employing experimental results from previous reports, we provide a collection of thickness dependent refractive index of VO2 films. More precise transmission can be achieved by using this set of refractive index data in the calculations which agree with those of experiments. These results also fairly make us capable to determine optimized film thickness for any desired transmission performance. This method is useful for design of VO2 based thermochromic smart windows.",2112.04582v1 2021-12-10,Coupling of electronic and structural degrees of freedom in vanadate superlattices,"Heterostructuring provides different ways to manipulate the orbital degrees of freedom and to tailor orbital occupations in transition metal oxides. However, the reliable prediction of these modifications remains a challenge. Here, we present a detailed investigation of the relationship between the crystal and electronic structure in YVO$_3$-LaAlO$_3$ superlattices by combining ab initio theory, scanning transmission electron microscopy, and x-ray diffraction. Density functional theory simulations including an on-site Coulomb repulsion term, accurately predict the crystal structure and in conjunction with x-ray diffraction, provide an explanation for the lifting of degeneracy of the vanadium $d_{xz}$ and $d_{yz}$ orbitals, that was recently observed in this system. In addition, we unravel the combined effects of electronic confinement and octahedral connectivity by disentangling their impact from that of epitaxial strain. Our results demonstrate that the specific orientation of the substrate and the thickness of the YVO$_3$ slabs in the multilayer, can be utilized to reliably engineer orbital polarization.",2112.05444v1 2021-12-30,"Realizing Kagome Band Structure in Two-Dimensional Kagome Surface States of $RV_{6}Sn_{6}$ ($R$=Gd,Ho)","We report angle resolved photoemission experiments on a newly discovered family of kagome metals $RV_{6}Sn_{6}$ ($R$=Gd, Ho). Intrinsic bulk states and surface states of the vanadium kagome layer are differentiated from those of other atomic sublattices by the real-space resolution of the measurements with a small beam spot. Characteristic Dirac cone, saddle point and flat bands of the kagome lattice are observed. Our results establish the two-dimensional (2D) kagome surface states as a new platform to investigate the intrinsic kagome physics.",2112.15007v1 2022-01-20,Crystal structure evolution in the van der Waals transition metal trihalides,"Most transition-metal trihalides are dimorphic. The representative chromium-based triad, CrCl3, CrBr3, CrI3, is characterized by the low-temperature phase adopting the trigonal BiI3 type while the structure of the high-temperature phase is monoclinic of AlCl3 type (C2/m). The structural transition between the two crystallographic phases is of the first-order type with large thermal hysteresis in CrCl3 and CrI3. We studied crystal structures and structural phase transitions of vanadium-based counterparts VCl3, VBr3, and VI3 by measuring specific heat, magnetization, and X-ray diffraction as functions of temperature and observed an inverse situation. In these cases, the high-temperature phase has a higher symmetry while the low-temperature structure reveals a lower symmetry. The structural phase transition between them shows no measurable hysteresis in contrast to CrX3. Possible relations of the evolution of the ratio c/a of the unit cell parameters, types of crystal structures, and nature of the structural transitions in V and Cr trihalides are discussed.",2201.08088v1 2022-02-28,Entanglement between a muon spin and $I>\frac{1}{2}$ nuclear spins,"We report on the first example of quantum coherence between the spins of muons and quadrupolar nuclei. We observe this effect in vanadium intermetallic compounds which adopt the A15 crystal structure, and whose members include all technologically dominant superconductors. The entangled states are extremely sensitive to the local structural and electronic environments through the electric field gradient at the quadrupolar nuclei. This case-study demonstrates that positive muons can be used as a quantum sensing tool to probe also structural and charge related phenomena in materials, even in the absence of magnetic order.",2202.13742v1 2022-03-03,Symmetry-protected Dirac nodal lines and large spin Hall effect in $\mathbf{V_6Sb_4}$ with kagome bilayer,"Recently, a family of nonmagnetic kagome metals \textit{A}$\mathrm{V_3Sb_5}$ (\textit{A}=K, Rb, and Cs) has attracted significant attention for realizing the intertwining of quantum order and nontrivial topology. However, these compounds have been identified to host complex band structures. Therefore, it is desirable to design and synthesize novel kagome materials with a simple band topology and good transport properties. In this study, using first-principles calculations, we present the electronic properties and the intrinsic spin Hall effect of V$_6$Sb$_4$, the latest experimentally synthesized vanadium-based compounds with a kagome bilayer. In the absence of spin-orbital coupling (SOC), this compound is a Dirac nodal line semimetal with symmetry-protected nodal rings near the Fermi level. Within the SOC, the spin-rotation symmetry breaks the gaps of the nodal rings with a small band gap. Furthermore, based on the Wannier tight-binding approach and the Kubo formula, we propose a large spin Hall effect in V$_6$Sb$_4$, which intrinsically originates from the spin Berry curvature. Our work further expands nonmagnetic kagome compounds for applications in spintronics accompanied by exotic quantum order.",2203.01558v1 2022-03-23,"Thermally switchable polarization manipulation and diodelike transmission in scalable, resonator-free, mid-infrared metasurfaces with vanadium-dioxide grids","We conceptualized three-array scalable metasurfaces comprising only three thin strip grids and numerically demonstrated their characteristics in the mid-infrared spectral regime for switchable polarization manipulation and related asymmetric diodelike transmission (AT). A few or all of the grids were taken to be made of VO$_2$, a phase-change material. For each proposed metasurface, two effective structures and, therefore, two different functionalities exist, corresponding to the metallic and insulating phases of VO$_2$. The achieved scenarios of functionality switching that depend on the VO$_2$ phase are shown to significantly depend in the way in which VO$_2$ is incorporated to the metasurface. Switchable bands of polarization manipulation are up to 40 THz wide. The AT band can be modulated when Fabry--Perot (anti-)resonances come into play.",2203.12754v1 2022-04-10,V$_2$C-based lithium batteries: The influence of magnetic phase and Hubbard interaction,"MXenes are a family of two-dimensional materials that could be attractive for use as electrodes in lithium batteries due to their high specific capacity. For this purpose, it is necessary to evaluate magnitudes such as the lithium adsorption energy and the magnitude of the open-circuit voltage for different lithium concentrations. In this paper, we show through first principles calculations that in a V$_2$C monolayer we must consider the high correlation between the electrons belonging to vanadium to obtain correct results of these quantities. We include this correlation employing the Hubbard coupling parameter obtained by a linear response method. We found that the system is antiferromagnetic and that the quantities studied depend on the magnetic phase considered. Indirectly, experimental results could validate the theoretical value of the theoretical Hubbard parameter.",2204.04764v1 2022-04-11,Chemical state analysis of reactively sputtered zinc vanadium nitride: The Auger parameter as a tool in materials design,"Photoelectron spectroscopy is an important tool for the development of new materials. However, especially for nitride semiconductors, the formation of surface oxides, surface band bending as well as the lack of a suitable charge reference often prevent a robust analysis. Here, we perform a comprehensive chemical state analysis of the Zn-V-N phase space using the Auger parameter concept, which is less sensitive to such uncertainties. Phase-pure Zn2VN3, VN, and Zn3N2 samples are analyzed using XPS/HAXPES after transfer in inert-gas atmosphere. In addition, high-throughput chemical state analysis is performed on combinatorial Zn1-xVxN thin film libraries. The evolution of the Zn Auger parameter in Zn1-xVxN is consistent with previous mapping of the structural and functional properties. Strikingly, the study reveals a narrower stability range of wurtzite Zn1-xVxN than our previous high-throughput XRD screening, highlighting the sensitivity of the measurement approach. The procedures applied here are transferable to many other material systems and could be particularly useful for the high-throughput development of materials with low crystallinity where insights from XRD screenings are limited.",2204.05401v1 2022-04-12,On the Existence of Photoluminescence and Room-Temperature Spin Polarization in Ambipolar V doped MoS$_2$ Monolayers,"Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $\sigma^+$ and $\sigma^-$ of light excitation). A large V doping causes semiconductor to metal transition in MoS$_2$ but with medium level causing the existence of photoluminescence with high spin polarization. The ambipolar nature of medium level V doped MoS$_2$ is shown here indicating its potential as an opto-electronic material. The presence of V-dopants and their different level of content are proven by both spectroscopic and microscopic methods.A detailed temperature and power dependent photoluminescence studies along with density functional theory-based calculations in support unravels the emergence of the co-existence of spin-valley coupling and photoluminescence. This study shows the potential of doping MoS$_2$ for deriving new materials for next generation room temperature opto-spintronics.",2204.05887v1 2022-04-20,Nuclear Spin Quantum Memory in Silicon Carbide,"Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.",2204.09295v2 2022-04-27,Finite-temperature surface elasticity of crystalline solids,"Surface energies and surface elasticity largely affect the mechanical response of nanostructures as well as the physical phenomenon associated with surfaces such as evaporation and adsorption. Studying surface energies at finite temperatures is therefore of immense interest for nanoscale applications. However, calculating surface energies and derived quantities from atomistic ensembles is usually limited to zero temperature or involve cumbersome thermodynamic integration techniques at finite temperature. Here, we illustrate a technique to identify the energy and elastic properties of surfaces of solids at non-zero temperature based on a Gaussian phase packets (GPP) approach (which in the isothermal limit coincides with a maximum-entropy formulation). Using this setup, we investigate the effect of temperature on the surface properties of different crystal faces for six pure metals -- copper, nickel, alumimum, iron, tungsten and vanadium -- thus covering both FCC and BCC lattice structures. While the obtained surface energies and stresses usually show a decreasing trend with increasing temperature, the elastic constants do not show such a consistent trend across the different materials and are quite sensitive to temperature changes. Validation is performed by comparing the obtained surface energy densities of selected BCC and FCC materials to those calculated via molecular dynamics.",2204.13028v1 2022-05-18,Higgs-Leggett mechanism for the elusive 6e superconductivity observed in Kagome vanadium-based superconductors,"A recent Little-Parks experiment on Kagome-structured superconductor CsV_3Sb_5 demonstrated remarkable resistance oscillations with period \phi0/3=hc/6e. Here, we perform analysis based on a theory involving three 2e superconductivity (SC) order parameters associated with the three reciprocal lattice vectors which connect M points of the hexagonal Brillouin zone. In a ring geometry we unveil that, as a series of metastable states, phase of one SC order parameter winds 2\pi more or less than the other two ones around the ring, which yields local free energy minima at integer multiples of \phi0/3. Intriguingly, the ground-state degeneracy associated with a Z_2 chirality is crucial, and the Higgs-Leggett mechanism stabilizes domain walls (DW) between chiral domains. At low temperatures DW are expelled from the system resulting in free energy minima only at integer multiples of \phi_0. Our theory explains successfully the 6e SC observed in experiments, which opens a door for approaching rich physics of Kagome superconductors.",2205.08732v2 2022-06-17,Theory of ultrafast magnetization of non-magnetic semiconductors with localized conduction bands,"The magnetization of a non-magnetic semiconductor by femtosecond light pulses is crucial to achieve an all-optical control of the spin dynamics in materials and to develop faster memory devices. However, the conditions for its detection are largely unknown. In this work we identify the criteria for the observation of ultrafast magnetization and critically discuss the difficulties hindering its experimental detection. We show that ultrafast magnetization of a non magnetic semiconductor can be observed in compounds with very localized conduction band states and more delocalized valence bands, such as in the case of a p-d charge transfer gap. By using constrained and time dependent density functional theory simulations, we demonstrate that a transient ferrimagnetic state can be induced in diamagnetic semiconductor V2O5 via ultrafast pulses at realistic fluences. The ferrimagnetic state has opposite magnetic moments on vanadium (conduction) and oxygen (valence) states. Our methodology outruns the case of V2O5 as it identifies the key requirements for a computational screening of ultrafast magnetism in non-magnetic semiconductors.",2206.08624v1 2022-09-06,Crossover between electron-electron and electron-phonon mediated pairing on the Kagome lattice,"We study electron-electron and electron-phonon mediated pairing in the Holstein extended Hubbard model on the Kagome lattice near the van Hove fillings, and investigate their combined effects on electron pairing states. We find that their combination can promote exotic pairings in a crossover region, where the filling is close to a van Hove singularity. In particular, at the $p$-type van Hove filling the $E_{1u}$ ($p$-wave) and $B_{2u}$ ($f_{y^3-3yx^2}$-wave) pairings become leading, and at the $m$-type van Hove filling the $E_{1u}$ and $A_{2g}$ ($i$-wave) pairings get promoted. Moreover, we show that the electron-phonon interaction acquires a significant momentum dependence, due to the sublattice texture of the Fermi surfaces, which can promote non $s$-wave pairing. We present a detailed analysis of these pairing propensities and discuss implications for the vanadium-based kagome superconductors AV$_3$Sb$_5$.",2209.02351v2 2022-09-08,Titanium-based kagome superconductor CsTi_3Bi_5 and topological states,"Since the discovery of a new family of vanadium-based kagome superconductor AV3Sb5 (A=K, Rb, and Cs) with topological band structures, extensive effort has been devoted to exploring the origin of superconducting states and the intertwined orders. Meanwhile, searching for new types of superconductors with novel physical properties and higher superconducting transition temperatures has always been a major thread in the history of superconductor research. Here we report a successful fabrication and the topological states of a Titanium-based kagome metal CsTi3Bi5 (CT3B5) crystal. The as-grown CT3B5 crystal is of high quality and possesses a perfect two-dimensional kagome net of Titanium. The superconductivity of the CT3B5 crystal shows that the critical temperature Tc is of ~4.8 K. First-principle calculations predict that the CT3B5 has robust topological surface states, implying that CT3B5 is a Z2 topological kagome superconductor. This finding provides a new type of superconductors and the base for exploring the origin of superconductivity and topological states in kagome superconductors.",2209.03840v1 2022-09-21,"Correction of the pressure scales reliant to the thermal pressures shifts in iron (3d) vanadium (4d), iridium and platinum (5d) transition metals","In many published articles isobaric behavior in DAC chambers has been reported On the other hand, a clear isochoric behavior in the chambers were reported. Thus, Isochoric or isobaric condition remain an open question. In isochoric condition, upon increasing the temperature, at each pressure, the examined sample and the PTM both are subject to increases of their volumes which is suppressed by the chamber finite volume, provoking an increase in the thermal pressure over the whole system. For this reason, the pressure scale reported in DAC experiments do not represent the actual pressure experienced by the sample in the cell. The different response of the PTMs to P,T changes is the reason for the variety of melting curves reported in the literature. It is concluded that the pressure scale in DAC experiments need a correction taking in to account the thermal pressure shift. Trusting the first principals DFT- Z methodology it is shown that the melting curve derived by this method should serve as an anchor for the pressure scale correction.",2209.10188v2 2022-09-26,Tunable Directional Filter for Mid-Infrared Optical Transmission Switching,"Controlling the spectral and angular response of infrared (IR) radiation is a challenging task of paramount importance to various emerging photonic applications. Here, we overcome these problems by proposing and analyzing a new design of a tunable narrowband directional optical transmission filter. The presented thermally controlled multilayer filter leverages the temperature dependent phase change properties of vanadium dioxide (VO2) to enable efficient and reversible fast optical switching by using a pump-probe laser excitation setup. More specifically, transmission is blocked for high intensity probe lasers due to the VO2 metallic properties induced at elevated temperatures while at low probe laser intensities high transmission through the filter occurs only for a narrowband IR range confined to near normal incident angles. The proposed multilayer composite dielectric filter is expected to have applications in optical communications, where it can act as dual functional infrared filter and optical switch.",2209.13035v1 2022-10-06,Kinetically Decoupled Electrical and Structural Phase Transitions in VO2,"Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and concomitant structural phase transition in VO2 is yet to be fully understood. We have investigated the kinetics of the above phase transition behaviors of VO2 with the help of resistivity measurements and Raman spectroscopy. Resistance thermal hysteresis scaling and relaxation measurements across the temperature induced insulator to metal transition reveal the unusual behaviour of this first-order phase transition, whereas Raman relaxation measurements show that the temperature induced structural phase transition in VO2 follows usual behaviour and is consistent with mean field prediction. At higher temperature sweeping rates decoupling of insulator to metal transition and structural phase transition have been confirmed. The observed anomalous first order phase transition behavior in VO2 is attributed to the unconventional quasi particle dynamics, i.e. significantly lowered electronic thermal conductivity across insulator to metal transition, which is confirmed by ultrafast optical pump-probe time domain thermoreflectance measurements.",2210.02691v1 2022-10-07,Enhanced Magnetism in Heterostructures with Transition-Metal Dichalcogenide Monolayers,"Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties of $\textrm{Fe}/\textrm{WSe}_2/\textrm{Pt}$ systems containing pristine, defective, or doped $\textrm{WSe}_2$ monolayers. The proximity effects of the ferromagnetic Fe layer are studied by considering defective and vanadium-doped $\textrm{WSe}_2$ monolayers. All heterostructures are found to be ferromagnetic, and the insertion of the transition-metal dichalcogenide results in a redistribution of spin orientation and an increased density of magnetic atoms due to the magnetized $\textrm{WSe}_2$. There is an increase in the overall total density of states at the Fermi level due to $\textrm{WSe}_2$; however, the transition-metal dichalcogenide may lose its distinct semiconducting properties due to the stronger than van der Waals coupling. Spin-resolved electronic structure properties are linked to larger spin Seebeck coefficients found in heterostructures with $\textrm{WSe}_2$ monolayers.",2210.03817v1 2022-10-21,Triangular Kondo lattice in $\mathrm{YbV_6Sn_6}$ and its quantum critical behaviors in magnetic field,"We report magnetization, heat capacity and electrical resistivity for a newly discovered heavy fermion (HF) compound $\mathrm{YbV_6Sn_6}$ which is crystallized in a hexagonal $\mathrm{HfFe_6Ge_6}$-type structure, highlighted by the stacking of triangular ytterbium sublattice and kagome vanadium sublattice. Above 2 K, $\mathrm{YbV_6Sn_6}$ shows typical HF properties due to the Kondo effect on the Kramers doublet of $\mathrm{Yb^{3+}}$ ions in crystal electric field. A remarkable magnetic ordering occurs at $T_{\mathrm{N}}$ = 0.40 K in zero field while a weak external field suppresses the ordering and induces non-Fermi liquid (NFL) behavior. In strong magnetic field the compound shows a heavy Fermi liquid state. $\mathrm{YbV_6Sn_6}$ presents as one of the few examples of Yb-based HF compounds hosting triangular Kondo lattice on which a magnetic field induces quantum criticality near zero temperature.",2210.12117v1 2022-10-20,Nanoscale optical nonreciprocity with nonlinear metasurfaces,"Optical nonreciprocity is manifested as a difference in transmission of light between a pair of modes for the opposite directions of excitation. Nonreciprocal optics is traditionally realized with relatively bulky components such as optical isolators based on the Faraday rotation [1,2]. This represents a roadblock to the future miniaturization and integration of optical systems requiring the development of subwavelength nonreciprocal components. Here we demonstrate nonreciprocal transmission through a half-a-micron-thick silicon metasurface hybridized with vanadium dioxide (VO2) layer. Reciprocity is broken by VO2 undergoing a phase transition from its insulating to conductive phase. The phase transition is induced all-optically by an incident light, and it is designed to occur under different conditions for the opposite directions of illumination. Resonant response of the metasurface enhances nonreciprocity. Such hybrid metasurfaces can exhibit nonreciprocity at intensities as low as 150 W/cm2. Our demonstration brings optical nonreciprocity concepts to the realm of nanoscale science.",2210.14952v4 2022-12-19,An empirical spectroscopic model for eleven electronic states of VO,"Previously-determined empirical energy levels are used to construct a rovibronic model for the $\mathrm{X}\,^4\Sigma^-$, $\mathrm{A}'\,^4\Phi$, $\mathrm{A}\,^4\Pi$, $\mathrm{B}\,^4\Pi$, $\mathrm{C}\,^4\Sigma^-$, $\mathrm{D}\,^4\Delta$, $\mathrm{1}\,^2\Delta$, $\mathrm{1}\,^2\Sigma^+$, $\mathrm{1}\,^2\Phi$, $\mathrm{1}\,^2\Pi$ and $\mathrm{2}\,^2\Pi$ electronic states of vanadium mononoxide. The spectrum of VO is characterized by many couplings and crossings between the states associated with these curves. The model is based on the use of potential energy curves, represented as extended Morse oscillators, and couplings (spin-orbit, spin-spin, angular momentum), represented by polynomials, which are tuned to the data plus an empirical allowance for spin-rotation couplings. The curves are used as input for the variational nuclear motion code \duo. For the $\mathrm{X}\,^4\Sigma^-$, $\mathrm{1}\,^2\Phi$ and $\mathrm{1}\,^2\Pi$ states the model reproduces the observed energy to significantly better than 0.1 $\mathrm{cm}^{-1}$. For the other states the standard deviations are between 0.25 and 1.5 $\mathrm{cm}^{-1}$. Further experimental data and consideration of hyperfine effects would probably be needed to significantly improve this situation.",2212.09223v1 2022-12-20,Ultrafast electron dynamics in a topological surface state observed in two-dimensional momentum space,"We study ultrafast population dynamics in the topological surface state of Sb$_2$Te$_3$ in two-dimensional momentum space with time- and angle-resolved two-photon photoemission. Linear polarized mid-infrared pump pulses are used to permit a direct optical excitation across the Dirac point. We show that this resonant excitation is strongly enhanced within the Dirac cone along three of the six $\bar{\Gamma}$-$\bar{M}$ directions and results in a macroscopic photocurrent when the plane of incidence is aligned along a $\bar{\Gamma}$-$\bar{K}$ direction. Our experimental approach makes it possible to disentangle the decay of transiently excited population and photocurent by elastic and inelastic electron scattering within the full Dirac cone in unprecedented detail. This is utilized to show that doping of Sb$_2$Te$_3$ by vanadium atoms strongly enhances inelastic electron scattering to lower energies, but only scarcely affects elastic scattering around the Dirac cone.",2212.10153v1 2022-12-21,Rare collapse of fermionic quasiparticles upon coupling to local bosons,"We study the stability of the fermionic quasiparticle in a fermion-boson model on a Bethe lattice, with fermions interacting with local bosons via a polaronic-type coupling. We solve the problem by mapping it onto a non-interacting chain with site-dependent potential. We show that, despite a finite number of bosonic excitations costing zero energy, among the many analyzed cases, the occurrence of a complete collapse of the quasiparticle is rare. The quasiparticle disappearance becomes easier with an increase in: (i) the total number of bosons with zero energy, and (ii) the relative strength of the coupling between bosons and fermions. The postulated model can, among other things, be applied to study systems in which fermions are introduced into antiferromagnetic (or antiferro-orbital) domains surrounded by ferromagnetic (or ferro-orbital) ordered states. This might take place in the overdoped cuprates or upon doping manganese or vanadium oxides. Finally, we show how this model leads to an in-depth understanding of the onset of quasiparticles in the 1D and 2D $t$-$J^z$ model.",2212.11065v2 2023-01-02,Non-Equilibrium Spark Plasma Reactive Doping Enables Highly Adjustable Metal to Insulator Transitions and Improved Mechanical Stability for VO2,"Although vanadium dioxide (VO2) exhibits the most abrupt metal to insulator transition (MIT) properties near room-temperature, the present regulation of their MIT functionalities is insufficient owing to the high complexity and susception associated with V4+. Herein, we demonstrate a spark plasma assisted reactive sintering (SPARS) approach to simultaneously achieve in situ doping and sintering of VO2 within largely short period (~10 minutes). This enables high convenience and flexibility in regulating the electronic structure of VO2 via dopant elements covering Ti, W, Nb, Mo, Cr and Fe, leading to a wide adjustment in their metal to insulator transition temperature (TMIT) and basic resistivity. Furthermore, the mechanical strengths of the doped-VO2 were meanwhile largely improved via the compositing effect of high melting-point dopant oxide. The high adjustability in MIT properties and improved mechanical properties further paves the way towards practical applications of VO2 in power electronics, thermochromism and infrared camouflage.",2301.00634v1 2023-01-16,Analyze the Effects of COVID-19 on Energy Storage Systems: A Techno-Economic Approach,"During the COVID-19 pandemic, the U.S. power sector witnessed remarkable electricity demand changes in many geographical regions. these changes were evident in population-dense cities. This paper incorporates a techno-economic analysis of energy storage systems to investigate the pandemic's influence on ESS development, In particular, we employ a linear program-based revenue maximization model to capture the revenues of ESS from participating in the electricity market, by performing arbitrage on energy trading, and regulation market, by providing regulation services to stabilize the grid's frequency. We consider five dominant energy storage technologies in the U.S., namely, Lithium-ion, Advanced Lead Acid, Flywheel, Vanadium Redox Flow, and Lithium-Iron Phosphate storage technologies. Extensive numerical results conducted on the case of New York City allow us to highlight the negative impact that COVID-19 had on the NYC power sector.",2301.06268v1 2023-01-26,Hydrogen atom/molecule adsorption on 2D metallic porphyrin: A first-principles study,"Hydrogen is a promising element for applications in new energy sources like fuel cells. One key issue for such applications is storing hydrogen. And, to improve storage capacity, understanding the interaction mechanism between hydrogen and possible storage materials is critical. This work uses DFT simulations to comprehensively investigate the adsorption mechanism of H/H$_2$ on the 2D metallic porphyrins with one transition metal in its center. Our results suggest that the mechanism for adsorption of H (H$_2$) is chemisorption (physisorption). The maximum adsorption energy for atomic hydrogen was $-3.7$ eV for 2D porphyrins embedded with vanadium or chromium atoms. Our results also revealed charge transfer of up $-0.43$ e to chemisorbed H atoms. In contrast, the maximum adsorption energy calculated for molecular hydrogen was $-122.5$ meV for 2D porphyrins embedded with scandium atoms. Furthermore, charge transfer was minimal for physisorption. Finally, we also determined that uniaxial strain has a minimal effect on the adsorption properties of 2D metallic porphyrins.",2301.11466v1 2023-02-24,Impact of the orbital current order on the superconducting properties of the kagome superconductors,"Motivated by recent experimental evidences signalling the chiral charge order in the vanadium-based kagome superconductors, we theoretically investigate the impact of the chiral flux charge order over the experimental outcomes for the normal and the SC properties. It is revealed that the spectral weight on the Fermi surface (FS) is partially gaped by the chiral flux charge order with the reservation of the spectral weight on the $M$ points and the midpoint between the two adjacent $M$ points, resulting in the momentum-dependent energy gap being consistent with the recent experimental observations. More importantly, by considering the influence of the chiral flux charge order, we find that a conventional fully gapped SC pairing state evolves into a nodal gap feature for the spectral weight due to the spectral gap modulations on the FS. As a result, the U-shaped density of states (DOS) deforms to the V-shaped one along with the residual DOS near the Fermi energy. These results bear some resemblance to the experimental observations, and may serve as a promising proposal to mediate the divergent or seemingly contradictory experimental outcomes about the SC pairing symmetry.",2302.12377v1 2023-03-12,Near-field imaging of domain switching in in-operando VO$_{2}$ devices,"Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical microscopy is a relatively novel approach to probe the optical response of materials with a spatial resolution well below the diffraction limit. We use this non-invasive tool to demonstrate that it provides detailed information on the origin and memory behaviour of ultra-thin films of vanadium dioxide. Simultaneously recorded $I(V)$ characteristics and near-field maps show that discontinuities in the I(V) characteristics arise from the sudden switching of insulating domains to metallic domains. At the threshold voltage, the domains form a continuous current path. The metallic domains persist once the bias voltage is removed, but narrow monoclinic regions appear around the domain boundaries. The key advantage of our approach is that it provides detailed information on the electronic structure at length scales raging from tens of nanometers up to tens of microns and is easily applied under \textit{in operando} conditions.",2303.06703v1 2023-04-28,Ab-initio study of short-range ordering in vanadium-based disordered rocksalt structures,"Disordered rocksalt Li-excess (DRX) compounds are attractive new cathode materials for Li-ion batteries as they contain resource-abundant metals and do not require the use of cobalt or nickel. Understanding the delithiation process and cation short-range ordering (SRO) in DRX compounds is essential to improving these promising cathode materials. Herein, we use first-principles calculations along with the cluster-expansion approach to model the disorder in DRX Li2-xVO3, 0 < x < 1. We discuss the SRO of Li in tetrahedral and octahedral sites, and the order in which Li delithiates and V oxidizes with respect to local environments. We reveal that the number of nearest-neighbor V dictates the order of delithiation from octahedral sites and that V are oxidized in a manner that minimizes the electrostatic interactions among V. Our results provide valuable insight for tailoring the performance of V-based DRX cathode materials in general by controlling the SRO features that reduce energy density.",2304.14645v1 2023-05-05,Ultrafast all-optical manipulation of the charge-density-wave in VTe$_{2}$,"The charge-density wave (CDW) phase in the layered transition-metal dichalcogenide VTe$_{2}$ is strongly coupled to the band inversion involving vanadium and tellurium orbitals. In particular, this coupling leads to a selective disappearance of the Dirac-type states that characterize the normal phase, when the CDW phase sets in. Here, by means of broadband time-resolved optical spectroscopy (TR-OS), we investigate the ultrafast reflectivity changes caused by collective and single particle excitations in the CDW ground state of VTe$_{2}$. Remarkably, our measurements show the presence of two collective (amplitude) modes of the CDW ground state. By applying a double-pulse excitation scheme, we show the possibility to manipulate these modes, demonstrating a more efficient way to control and perturb the CDW phase in VTe$_{2}$.",2305.03528v1 2023-05-09,Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration,"Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like structures. We show here that by incorporating multiple, parallel VO2 bridges in a single two-terminal device, a wider range of possible characteristics can be obtained, including a manifold of addressable resistance states. Different device configurations are studied, in which the number of bridges, the bridge dimensions and the interbridge distances are varied. The switching characteristics of the multibridge devices are influenced by the thermal crosstalk between the bridges. Scanning Thermal Microscopy has been used to image the current distributions at various voltage/current bias conditions. This work presents a route to realize devices exhibiting highly non-linear, multistate current-voltage characteristics, with potential applications in e.g., tunable electronic components and novel, neuromorphic information processing circuitry.",2305.05259v1 2023-05-10,Quadratic heat capacity and high-field magnetic phases of V5S8,"We report the observation of an unexpected quadratic temperature dependence of the heat capacity in the vanadium sulphide metal V5S8 at low temperatures which is independent of applied magnetic field. We find that the behaviour of the heat capacity is consistent with an unconventional phonon spectrum which is linear in wavevector in the c direction but quadratic in the a-b plane, indicating a form of geometrical elastic criticality. In the case of V5S8 we also observe an unusual intermediate transition at high magnetic fields between the expected spin-flop and spin-flip transitions. We demonstrate that the intermediate field-induced transition is in agreement with a model of two sublattices with frustrated inter- and intra-sublattice spin couplings.",2305.06175v1 2023-05-20,Strong substrate influence on atomic structure and properties of epitaxial VO2 thin films,"The metal-insulator transition (MIT) observed in vanadium dioxide (VO2) has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behaviour is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, we use scanning transmission electron microscopy (STEM) to investigate cross-section lamella of the VO2 films deposited using pulsed laser deposition (PLD) on three substrates: c-cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. We link the overall film quality and structures on atomic and nanoscale to the electrical transition characteristics. We observe poor MIT characteristics on c-sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favourably, despite similar stress relaxation which, however, only lead to domain boundaries but no cracks.",2305.12108v1 2023-05-31,Physics-informed machine learning of redox flow battery based on a two-dimensional unit cell model,"In this paper, we present a physics-informed neural network (PINN) approach for predicting the performance of an all-vanadium redox flow battery, with its physics constraints enforced by a two-dimensional (2D) mathematical model. The 2D model, which includes 6 governing equations and 24 boundary conditions, provides a detailed representation of the electrochemical reactions, mass transport and hydrodynamics occurring inside the redox flow battery. To solve the 2D model with the PINN approach, a composite neural network is employed to approximate species concentration and potentials; the input and output are normalized according to prior knowledge of the battery system; the governing equations and boundary conditions are first scaled to an order of magnitude around 1, and then further balanced with a self-weighting method. Our numerical results show that the PINN is able to predict cell voltage correctly, but the prediction of potentials shows a constant-like shift. To fix the shift, the PINN is enhanced by further constrains derived from the current collector boundary. Finally, we show that the enhanced PINN can be even further improved if a small number of labeled data is available.",2306.01010v2 2023-06-06,Vanadium-Based Superconductivity in a Breathing Kagome Compound Ta2V3.1Si0.9,"Superconductivity in V-based kagome metals has recently raised great interest as they exhibit the competing ground states associated with the flat bands and topological electronic structures. Here we report the discovery of superconductivity in Ta2V3.1Si0.9 with a superconducting transition temperature Tc of 7.5 K, much higher than those in previously reported kagome metals at ambient pressure. While the V ions form a two-dimensional breathing kagome structure, the length difference between two different V-V bonds is just 0.04, making it very close to the perfect kagome structure. Our results show that Ta2V3.1Si0.9 is a moderate-coupled superconductor with a large upper critical field that is close to the Pauli limit. DFT calculations give a van-Hove-singularity band located at Fermi energy, which may explain the relatively high Tc observed in this material.",2306.03370v2 2023-06-16,Determination of the nearest-neighbor interaction in VO$_2$ via fractal dimension analysis,"The Ising model is one of the simplest and most well-established concepts to simulate phase transformations in complex materials. However, its most central constant, the interaction strength J between two nearest neighbors, is hard to obtain. Here we show how this basic constant can be determined with a fractal dimension analysis of measured domain structures. We apply this approach to vanadium dioxide, a strongly correlated material with a first-order insulator-to-metal phase-transition with enigmatic properties. We obtain a nearest-neighbor interaction of 13.8 meV, a value close to the thermal energy at room temperature. Consequently, even far below the transition temperature, there are spontaneous local phase-flips from the insulating into the metallic phase. These fluctuations explain several measured anomalies in VO$_2$, in particular the low thermal carrier activation energy and the finite conductivity of the insulating phase. As a method, our fractal dimension analysis links the Ising model to macroscopic material constants for almost any first-order phase transition.",2306.09722v2 2023-07-20,Reconfigurable cascaded thermal neuristors for neuromorphic computing,"While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, we explore an alternative route based on a new class of spiking oscillators we call thermal neuristors, which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition in vanadium dioxide, we demonstrate a wide variety of reconfigurable electrical dynamics mirroring biological neurons. Notably, inhibitory functionality is achieved just in a single oxide device, and cascaded information flow is realized exclusively through thermal interactions. To elucidate the underlying mechanisms of the neuristors, a detailed theoretical model is developed, which accurately reflects the experimental results. This study establishes the foundation for scalable and energy-efficient thermal neural networks, fostering progress in brain-inspired computing.",2307.11256v2 2023-07-31,Structural and Magnetic Properties of V-Ti-Si Alloy Superconductors,"The structural and magnetic properties of the as-cast and annealed V$_{0.6-x}$Si$_x$Ti$_{0.4}$ ($x$ = 0, 0.05, 0.10, 0.15) alloy superconductors are reported here. It is found that addition of silicon to the V-Ti alloys results in eutectic precipitation of Ti$_{5}$Si$_3$-phase in the body centred cubic (bcc) $\beta$-V-Ti matrix. In the as-cast V$_{0.6-x}$Si$_x$Ti$_{0.4}$ alloys, the superconducting transition temperature (T$_{C}$) changes non-monotonically with increasing silicon content whereas after annealing, it is about 7.7 K for all the alloys. On the other hand, the upper critical field decreases and the coherence length increases after annealing in the x = 0.10 alloy. The variations in the superconducting properties in the alloys are related to the solubility of 6 at.% Si in the V$_{0.60}$Ti$_{0.40}$ alloy and the vanadium enrichment in the $\beta$ matrix due to the precipitation of Ti$_{5}$Si$_3$ phase.",2307.16623v2 2023-08-04,Kinetics of Li transport in vanadium-based disordered rocksalt structures,"Disordered rocksalt Li-excess (DRX) compounds have emerged as promising new cathode materials for lithium-ion batteries, as they can consist solely of resource-abundant metals and eliminate the need for cobalt or nickel. A deeper understanding of the lithium-ion transport kinetics in DRX compounds is essential for enhancing their rate performance. This study employs first-principles calculations, cluster expansion techniques, and kinetic Monte Carlo simulations to investigate the Li+ transport properties in DRX Li2-xVO3, where 0 <= x <= 1. Our findings underscore (i) the necessity of accounting for both tetrahedral and octahedral Li occupancy when predicting the transport properties in DRX materials, (ii) the factors influencing the variation in the diffusion coefficients with Li content in Li2-xVO3, and (iii) the impact of Li+ correlated motion on the kinetics of Li+ transport. We reveal that the relative stability of tetrahedral and octahedral Li determines the number of active sites within the percolation network, subsequently affecting the Li+ transport properties. Furthermore, we demonstrate that the wide site-energy distribution causes correlated motion in Li2-xVO3, which hinders Li+ transport. Although our study focuses on Li2-xVO3 as a model system, the insights gained apply to all DRX materials, given their inherently broader site-energy distributions.",2308.02725v1 2023-08-28,Formation of Domains within Lower-to-higher Symmetry Structural Transition in CrI$_3$,"CrI$_3$ represents one of the most important van der Waals systems on the route to understanding two-dimensional magnetic phenomena. Being arranged in a specific layered structure it also provides a unique opportunity to investigate structural transformations in dimension-confined systems. CrI$_3$ is dimorphic and possesses a higher symmetry low-temperature phase, which is quite uncommon. It contrasts with vanadium trihalides which show a higher symmetry high-temperature. An explanation of this distinct behavior together with a large cycle-dependent transition hysteresis is still an open question. Our low-temperature X-ray diffraction study conducted on CrI$_3$ single crystals complemented by magnetization and specific heat measurements was focused mainly on specific features of the structural transition during cooling. Our results manifest that the structural transition during cooling relates to the formation of structural domains despite the lower symmetry structure transforming to a higher symmetry one. We propose that these domains could control the transition temperature and also the size of thermal hysteresis.",2308.14548v1 2023-09-02,Linear Trimer Formation by Three-Center-Four-Electron Bonding in RuP,"In molecules like hydrogen, most chemical bonds are formed by sharing two electrons from each atom in the bonding molecular orbital (two-center-two-electron (2c2e) bonding). There are, however, different kinds of chemical bonding. The I3- molecule, for example, is noteworthy because three iodine atoms are linearly united by sharing four electrons (three-center-four-electron (3c4e) bonding). Some inorganic solids undergo phase transitions that result in the formation of ""molecules"" in their crystalline frameworks, which are often accompanied by dramatic changes in physical properties; the metal-to-insulator transition (MIT) in vanadium dioxide, for example, occurs with the formation of dimer molecules with 2c2e bonding. We repot the creation of a linear ruthenium trimer with 3c4e bonding in ruthenium monopnictide at its MIT. Charge transfer from polymerized phosphorous to ruthenium produces this unusual molecule, with all conduction electrons trapped by the bonding molecular orbital. Our results demonstrate that molecules are crucial even in solid crystals as they impact their electronic properties.",2309.00838v1 2023-09-23,All-optical seeding of a light-induced phase transition with correlated disorder,"Ultrafast manipulation of vibrational coherence is an emergent route to control the structure of solids. However, this strategy can only induce long-range correlations and cannot modify atomic structure locally, which is required in many technologically-relevant phase transitions. Here, we demonstrate that ultrafast lasers can generate incoherent structural fluctuations which are more efficient for material control than coherent vibrations, extending optical control to a wider range of materials. We observe that local, non-equilibrium lattice distortions generated by a weak laser pulse reduce the energy barrier to switch between insulating and metallic states in vanadium dioxide by 6%. Seeding inhomogeneous structural-fluctuations presents an alternative, more energy efficient, route for controlling materials that may be applicable to all solids, including those used in data and energy storage devices.",2309.13275v1 2023-10-06,"Kagome KMn$_3$Sb$_5$ metal: Magnetism, lattice dynamics, and anomalous Hall conductivity","Kagome metals are reported to exhibit remarkable properties, including superconductivity, charge density wave order, and a large anomalous Hall conductivity, which facilitate the implementation of spintronic devices. In this work, we study a novel kagome metal based on Mn magnetic sites in a KMn$_3$Sb$_5$ stoichiometry. By means of first-principles density functional theory calculations, we demonstrate that the studied compound is dynamically stable, locking the ferromagnetic order as the ground state configuration, thus preventing the charge-density-wave state as reported in its vanadium-based counterpart KV$_3$Sb$_5$. Our calculations predict that KMn$_3$Sb$_5$ exhibits an out-of-plane (001) ferromagnetic response as the ground state, allowing for the emergence of topologically protected Weyl nodes near the Fermi level and nonzero anomalous Hall conductivity ($\sigma_{ij}$) in this centrosymmetric system. We obtain a tangible $\sigma_{xy} = 314$ S$\cdot$cm$^{-1}$ component, which is comparable to that of other kagome metals. Finally, we explore the effect of the on-site Coulomb repulsion ($+U$) on the structural and electronic properties and find that, although the lattice parameters and $\sigma_{xy}$ moderately vary with increasing $+U$, KMn$_3$Sb$_5$ stands as an ideal stable ferromagnetic kagome metal with a large anomalous Hall conductivity response.",2310.04339v1 2023-10-16,Molecular orbital formation and metastable short-range ordered structure in VO$_2$,"The metal-insulator transition (MIT) in vanadium dioxide VO$_2$ due to V-V dimerization has been extensively discussed for decades. While it is widely acknowledged that electron correlations, Peierls instabilities, and molecular orbital formations are crucial for understanding the MIT of VO$_2$, the primary origin of the MIT remains controversial. In this study, we delve into the crystal structure and orbital state of VO$_2$ through synchrotron x-ray diffraction experiments. The molecular orbital formation corresponding to the V-V dimerization is directly observed in the low-temperature insulating monoclinic phase, called the M1 phase, as indicated by the valence electron density distribution. Moreover, diffuse scattering observed in the high-temperature metal phase of rutile structure suggests the presence of short-range correlation of V displacements, which is not directly attributed to the structural fluctuation of the M1 phase. The short-range order in the rutile phase will be the key to understanding the MIT in this system.",2310.10193v2 2023-10-22,Atomic arrangement of van der Waals heterostructures using X-ray scattering and crystal truncation rod analysis,"Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bilayer graphene (BLG) hetero-structures grown on a 6H-SiC(0001) substrate. Using non-destructive CTR analysis, we were able to obtain electron density profiles and detailed crystal structure of the VSe2/BLG heterostructures. Specifically, the out-of-plane lattice parameters of each VSe2 layer were modulated by the interface compared to that of the bulk VSe2 1T phase. The atomic arrangement of the VSe2/BLG heterostructure provides deeper understanding and insight for elucidating the magnetic properties of the van der Waals heterostructure.",2310.14207v1 2023-10-30,Strain Engineering for Transition Metal Defects in SiC,"Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic level structure and optical electric-dipole transitions of the V defect in SiC. In particular we show how strain can be used to engineer the g-tensor, electronic selection rules, and the hyperfine interaction. Based on these insights we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.",2310.19719v1 2023-11-15,Infrared thermochromic antenna composite for self-adaptive thermoregulation,"Self-adaptive thermoregulation, the mechanism living organisms use to balance their temperature, holds great promise for decarbonizing cooling and heating processes. The functionality can be effectively emulated by engineering the thermal emissivity of materials to adapt to background temperature variations. Yet, solutions that marry large emissivity switching (${\Delta}\epsilon$) with scalability, cost-effectiveness and design freedom are still lacking. Here, we fill this gap by introducing infrared dipole antennas made of tunable thermochromic materials. We demonstrate that non-spherical antennas (rods, stars and flakes) made of vanadium-dioxide can exhibit a massive (~200-fold) increase in their absorption cross-section as temperature rises. Embedding these antennas in polymer films, or simply spraying them directly, creates free-form thermoregulation composites, featuring an outstanding ${\Delta}\epsilon\sim0.6$ in spectral ranges that can be tuned at will. Our research paves the way for versatile self-adaptive heat management solutions (coatings, fibers, membranes and films) that could find application in radiative-cooling, heat-sensing, thermal-camouflage, and other.",2311.08633v1 2023-11-26,"Quantum oscillations in kagome metals (Ti, Zr, Hf)V6Sn6 at van Hove filling","Kagome materials have recently drawn great attention due to the interplay between nontrivial band topology, electron correlations and van Hove singularities related many-body orders. Here we report three new vanadium-based kagome metals, TiV6Sn6, ZrV6Sn6 and HfV6Sn6, and conduct a comprehensive investigation on their structural, magnetic and electrical transport properties. All three compounds exhibit large unsaturated magnetoresistances and multiband Hall effects at low temperatures, indicating the existence of multiple highly mobile carriers. Both the diagonal and off-diagonal resistivity show quantum oscillations with nontrivial Berry phases and high quantum mobilities. First-principles calculations together with quantum oscillation analyses suggest the van Hove singularities at the M point for the three compounds all locate in close vicinity of the Fermi level, and there also exist multiple topological nontrivial band crossings including a nodal ring and a massive Dirac cone. Our work extends the kagome R166 family and paves the way for searching possible van Hove physics in the V kagome lattice.",2311.15239v1 2023-12-07,Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films,"Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.",2312.04425v1 2023-12-01,Comparative study of Kondo effect in Vanadium dichalcogenides VX$_2$ (X=Se & Te),"We report on the electrical transport, magnetotransport, and magnetic properties studies on the transition metal dichalcogenides VSe$_2$ and VTe$_2$ and draw a comprehensive comparison between them. We observe Kondo effect in both systems induced by the exchange interaction between localized moments and conduction electrons at low temperature, resulting into resistance upturn at 6 K for VSe$_2$ and 17 K for VTe$_2$. From the field dependent resistance measurements we find that the data is fitted best with modified Hamann equation corrected by the quantum Brillouin function for VSe$_2$, while the data is fitted best with modified Hamann equation corrected by the classical Langevin function for VTe$_2$. Interestingly, we observe a contrasting magnetoresistance (MR) property between these systems across the Kondo temperature. That means, negative MR is found in both systems in the Kondo state. In the normal state MR is positive for VSe$_2$, while it is negligible for VTe$_2$. In addition, both systems show weak ferromagnetism at low temperature due to intercalated V atoms.",2312.09258v1 2023-12-15,Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer,"With the rise of two-dimensional (2D) materials, unique properties that are completely distinct from bulk counterparts continue to emerge at low-dimensional scales, presenting numerous opportunities and challenges. It also provides a new perspective for the study of transition metal system. Here, based on density functional theory (DFT), the physical properties of 2D monolayer LiV2S4 have been studied. Remarkable changes have been observed, i.e., vanadium dimerization, ferromagnetism, charge distribution and metal-insulator transition (MIT). It is argued that the electronic instability leads to the V dimerization which further lifts the degeneracy of charge distribution and stabilizes the charge and spin ordering state.",2312.09937v1 2023-12-20,Collective dynamics and long-range order in thermal neuristor networks,"In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed ``thermal neuristors."" These devices function via thermal interactions among neighboring vanadium dioxide resistive memories, closely mimicking the behavior of biological neurons. Here, we show that the collective dynamical behavior of networks of these neurons showcases a rich phase structure, tunable by adjusting the thermal coupling and input voltage. Notably, we have identified phases exhibiting long-range order that, however, does not arise from criticality, but rather from the time non-local response of the system. In addition, we show that these thermal neuristor arrays achieve high accuracy in image recognition tasks through reservoir computing, without taking advantage of this long-range order. Our findings highlight a crucial aspect of neuromorphic computing with possible implications on the functioning of the brain: criticality may not be necessary for the efficient performance of neuromorphic systems in certain computational tasks.",2312.12899v1 2023-12-23,"Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn, V, Fe-Doped $\rm WSe_2$","Using Hubbard U corrected density functional theory calculations, lattice Monte-Carlo, and spin-Monte-Carlo simulations, we investigate the impact of dopant clustering on the magnetic properties of WSe2~doped with period four transition metals. We use manganese (Mn) and iron (Fe) as candidate n-type dopants and vanadium (V) as the candidate p-type dopants, substituting the tungsten (W) atom in WSe2. Specifically, we determine the strength of the exchange interaction in the Fe-, Mn-, and V-doped WSe2~ in the presence of clustering. We show that the clusters of dopants are energetically more stable than discretely doped systems. Further, we show that in the presence of dopant clustering, the magnetic exchange interaction significantly reduces because the magnetic order in clustered WSe2~becomes more itinerant. Finally, we show that the clustering of the dopant atoms has a detrimental effect on the magnetic interaction, and to obtain an optimal Curie temperature, it is important to control the distribution of the dopant atoms.",2312.15171v1 2024-01-07,Double tunable metamaterial perfect absorber,"This paper focuses on the simulation of a tunable metamaterial absorber designed for the infrared region. Adsorbents offer three different mechanisms to adjust their absorption characteristics. The first method involves changes in temperature. When the temperature changes, the electrical conductivity of the active material, vanadium dioxide (VO2), also changes. This transition between insulating and conducting phases at different temperatures provides the possibility to adjust the absorption spectrum of the metamaterial. By exploiting the thermochromic properties of VO2, the conductivity of the material can be dynamically adjusted over a wide range. Through temperature control, the conductivity of VO2 changes from 200 S/m to 2*105 S/m, resulting in a continuous adjustment of the absorption peak intensity. The second method relies on applying an electric field. By applying an electric field in the transverse direction of the lead zirconate titanate )PZT( material, the size of the piezoelectric material undergoes changes and bending. Consequently, the entire structure bends, leading to a change in the shape of the absorber. This mechanism allows for precise control of the absorber's shape by applying different voltages, which in turn enables the modification of the absorption peak.",2401.03421v1 2024-01-26,Quantum Oscillations Measurement of the Heavy Electron Mass near the van Hove Singularity in a Kagome Metal,"Kagome metals with the Fermi energy tuned near the van Hove singularities (vHss) have shown to host exotic phases including unconventional superconductivity and a chiral flux phase arising from a charge density wave. However, most quantum oscillations studies of the electronic structure of kagome metals focus on compounds which electronically or magnetically order, obscuring the unperturbed vHs. Here we present quantum oscillation measurements of YV$_6$Sn$_6$ which contains a pristine kagome lattice free from long range order. We discovered quantum oscillations corresponding to a large orbit ($\approx$70% of the Brillouin Zone area) with the heaviest mass ever observed in vanadium based kagome metals ($\approx3.3 m_e$), consistent with a Fermi pocket whose Fermi level is near the vHs. Comparing with first principles calculations suggests that the effective mass of this pocket is highly sensitive to the position of Fermi level. Our study establishes the enhanced density of states associated with a vHs in a kagome metal, allowing further insight into a potential driving mechanism for the unconventional electronic orderings in this class of materials.",2401.14699v1 2024-01-30,Coupling strongly correlated electron systems to a tunable electronic reservoir,"We study the effect of coupling an electronic reservoir to a Hubbard model and to a Dimer Hubbard Model. This is motivated by recent experiments on the effect of illumination on the insulator-metal transition in a vanadium oxides and photo-conductive cadmium sulfide heterostructure. We model the system as an electronic reservoir hybridized to the correlated system. We assume that the light intensity controls the hybridization coupling strength. We find that the light intensity acts similarly as the temperature in the weak interaction regime. This is consistent with the role played by electronic reservoirs in out-of-equilibrium systems. In contrast, qualitative differences appear at strong coupling. We show that modeling the V$_2$O$_3$ compound with a Hubbard model, our results describe qualitatively well the observed illumination-driven suppression of the insulator-metal transition. In contrast, in the DHM results fail to capture the mild suppression observed in the case of VO$_2$. This indicates that the lattice may play an important role in this case.",2401.17016v1 2024-04-04,Competitive coexistence of ferromagnetism and metal--insulator transition of VO$_2$ nanoparticles,"We investigated the magnetic and electric properties of nanometer-sized vanadium dioxide (VO$_2$) particles. VO$_2$ nanoparticles were formed by milling VO$_2$ powder. We measured the magnetic field dependence of the magnetization of the VO$_2$ powder and nanoparticles. The VO$_2$ powder did not exhibit ferromagnetism, whereas the VO$_2$ nanoparticles exhibited ferromagnetism. In addition, we fabricated samples by bridging between electrodes with the VO$_2$ nanoparticles, and the temperature dependence of their resistance was measured. Metal-insulator transitions (MITs) were observed, and the temperature range where the MIT occurred was wider than that in a typical bulk VO$_2$. The VO$_2$ nanoparticles exhibited these properties of ferromagnetism and MIT possibly because of the surface and size effects of the VO$_2$ nanoparticles. These results indicate the first observation of the competitive coexistence of ferromagnetism and MIT of VO$_2$ nanoparticles.",2404.03207v1 2024-04-05,Resonant Raman signatures of exciton polarons in a transition metal oxide: BiVO$_4$,"In this work we investigate the delocalized excitons and excitons trapped by a polaron formation in \BVO{} by means of resonant Raman spectroscopy. We record Raman spectra with 16 laser lines between 1.9 and \SI{2.6}{\eV} and analyze intensity variations of the Raman peaks for different vibrational modes. The resonant Raman cross sections of the \Ag{} modes contain two types of resonances. The first high-energy resonance near \SI{2.45}{\eV} belongs to a transition between delocalized states; it is close to absorption edge measured at \SI{2.3}{\eV} and exhibits a characteristic \SI{50}{\meV} anisotropy between polarization parallel and perpendicular to the $c$ axis. The high energy Raman resonance occurs inside the gap at \SI{1.94}{\eV} for all crystallographic directions. The in-gap resonance can involve a localized transition. We attribute it to an exciton-polaron, formed by a small localized electron polaron of Holstein type and delocalized holes. It manifests in the vibrations of vanadium and oxygen atoms where polaron localization occurs and the resonance energy matches theoretical predictions. The vibrational modes couple to the polaron with different efficiency determined from resonant Raman profiles.",2404.04112v1 2021-08-27,The CARMENES search for exoplanets around M dwarfs: Not-so-fine hyperfine-split vanadium lines in cool star spectra,"(Abridged) We characterize a series of neutral vanadium atomic absorption lines in the 800--910nm wavelength region of high signal-to-noise, high-resolution, telluric-corrected M-dwarf spectra from the CARMENES survey. Many of these lines are prominent and exhibit a distinctive broad and flat-bottom shape, which is a result of hyperfine structure (HFS). We investigate the potential and implications of these HFS split lines for abundance analysis of cool stars. With standard spectral synthesis routines, as provided by the spectroscopy software iSpec and the latest atomic data (including HFS) available from the VALD3 database, we modeled these striking line profiles. We used them to measure V abundances of cool dwarfs. We determined V abundances for 135 early M dwarfs (M0.0V to M3.5V) in the CARMENES guaranteed time observations sample. They exhibit a [V/Fe]-[Fe/H] trend consistent with that derived from nearby FG dwarfs. The tight ($\pm$ 0.1 dex) correlation between [V/H] and [Fe/H] suggests the potential application of V as an alternative metallicity indicator in M dwarfs. We also show hints that neglecting to model HFS could partially explain the temperature correlation in V abundance measurements observed in previous studies of samples involving dwarf stars with $T_{\rm eff} \lesssim 5300$K. Our work suggests that HFS can impact certain absorption lines in cool photospheres more severely than in Sun-like ones. Therefore, we advocate that HFS should be carefully treated in abundance studies in stars cooler than $\sim 5000$K. On the other hand, strong HFS split lines in high-resolution spectra present an opportunity for precision chemical analyses of large samples of cool stars. The V-to-Fe trends exhibited by the local M dwarfs continue to challenge theoretical models of V production in the Galaxy.",2108.12442v1 1998-04-29,"Magnetic correlations and quantum criticality in the insulating antiferromagnetic, insulating spin liquid, renormalized Fermi liquid, and metallic antiferromagnetic phases of the Mott system V_2O_3","Magnetic correlations in all four phases of pure and doped vanadium sesquioxide V_2O_3 have been examined by magnetic thermal neutron scattering. While the antiferromagnetic insulator can be accounted for by a Heisenberg localized spin model, the long range order in the antiferromagnetic metal is an incommensurate spin-density-wave, resulting from a Fermi surface nesting instability. Spin dynamics in the strongly correlated metal are dominated by spin fluctuations in the Stoner electron-hole continuum. Furthermore, our results in metallic V_2O_3 represent an unprecedentedly complete characterization of the spin fluctuations near a metallic quantum critical point, and provide quantitative support for the SCR theory for itinerant antiferromagnets in the small moment limit. Dynamic magnetic correlations for energy smaller than k_BT in the paramagnetic insulator carry substantial magnetic spectral weight. However, the correlation length extends only to the nearest neighbor distance. The phase transition to the antiferromagnetic insulator introduces a sudden switching of magnetic correlations to a different spatial periodicity which indicates a sudden change in the underlying spin Hamiltonian. To describe this phase transition and also the unusual short range order in the paramagnetic state, it seems necessary to take into account the orbital degrees of freedom associated with the degenerate d-orbitals at the Fermi level in V_2O_3.",9804320v3 2001-02-01,Exact diagonalisation study of charge order in the quarter-filled two-leg ladder system NaV2O5,"The charge ordering transition in the layer compound NaV2O5 is studied by means of exact diagonalization methods for finite systems. The 2-leg ladders of the V-Trellis lattice are associated with one spin variable of the vanadium 3d-electron in the rung and a pseudospin variable that describes its positional degree of freedom. The charge ordering (CO) due to intersite Coulomb interactions is described by an effective Ising-like Hamiltonian for the pseudo-spins that are coupled to the spin fluctuations along the ladder. We employ a Lanczos algortihm on 2D lattice to compute charge (pseudo-spin) and spin-correlation functions and the energies of the low lying excited states. A CO-phase diagram is constructed and the effect of intra-ladder exchange on the CO transition is studied. It is shown that a phase with no-longe range order (no-LRO) exists between the in-line and zig-zag ordered structures. We provide a finite-size scaling analysis for the spin excitation gap and also discuss the type of excitations. In addition we studied the effect of bond-alternation of spin exchange and derived a scaling form for the spin gap in terms of the dimerization parameter.",0102007v1 2002-10-24,The metal-insulator transitions of VO2: A band theoretical approach,"The results of first principles electronic structure calculations for the metallic rutile and the insulating monoclinic M1 phase of vanadium dioxide are presented. In addition, the insulating M2 phase is investigated for the first time. The density functional calculations allow for a consistent understanding of all three phases. In the rutile phase metallic conductivity is carried by metal t_2g orbitals, which fall into the one-dimensional d_parallel band, and the isotropically dispersing e_g^pi bands. Hybridization of both types of bands is weak. In the M1 phase splitting of the d_parallel band due to metal-metal dimerization and upshift of the e_g^pi bands due to increased p-d overlap lead to an effective separation of both types of bands. Despite incomplete opening of the optical band gap due to the shortcomings of the local density approximation, the metal-insulator transition can be understood as a Peierls-like instability of the d_parallel band in an embedding background of e_g^pi electrons. In the M2 phase, the metal-insulator transition arises as a combined embedded Peierls-like and antiferromagnetic instability. The results for VO2 fit into the general scenario of an instability of the rutile-type transition-metal dioxides at the beginning of the d-series towards dimerization or antiferromagnetic ordering within the characteristic metal chains. This scenario was successfully applied before to MoO2 and NbO2. In the d^1 compounds, the d_parallel and e_g^pi bands can be completely separated, which leads to the observed metal-insulator transitions.",0210558v1 2003-08-12,"Structural, electronic, and magneto-optical properties of YVO$_3$","Optical and magneto-optical properties of YVO$_3$ single crystal were studied in FIR, visible, and UV regions. Two structural phase transitions at 75 K and 200 K were observed and established to be of the first and second order, respectively. The lattice has an orthorhombic $Pbnm$ symmetry both above 200 K as well as below 75 K, and is found to be dimerized monoclinic $Pb11$ in between. We identify YVO$_3$ as a Mott-Hubbard insulator with the optical gap of 1.6 eV. The electronic excitations in the visible spectrum are determined by three $d$-bands at 1.8, 2.4, and 3.3 eV, followed by the charge-transfer transitions at about 4 eV. The observed structure is in good agreement with LSDA+$U$ band structure calculations. By using ligand field considerations, we assigned these bands to the transitions to the $^4A_{2g}$, $^2E_{g} + ^2T_{1g}$, and $^2T_{2g}$ states. The strong temperature dependence of these bands is in agreement with the formation of orbital order. Despite the small net magnetic moment of 0.01 $\mu_B$ per vanadium, the Kerr effect of the order of $0.01^\circ$ was observed for all three $d$-bands in the magnetically ordered phase $T_{\text{N\'eel}}<116 K$. A surprisingly strong enhancement of the Kerr effect was found below 75 K, reaching a maximum of $0.1^\circ$. The effect is ascribed to the non-vanishing net orbital magnetic moment.",0308224v1 2005-03-31,"Local Electronic Structure of PbVO3, a New Member of PbTiO3 Family, studied by XANES/ELNES","Recently an interesting multi-ferroic system PbVO3 [Chem. Mater. 2004] was successfully prepared using a high-pressure and high-temperature technique. The crystallographic features were reported. In this note we concentrate on the theoretical XANES spectra by considering the K-edge of Vanadium. The tetragonality [c/a=1.229 at 300 K] of PbVO3 is the largest in the PbTiO3 family of compounds. Thus one is led naturally to examine the effect of the change of tetragonality and the axial oxygen position on the electronic structure [i.e. XANES spectrum]. We study this effect in two ways. At a given temperature we vary the tetragonality and the axial oxygen position and quantify it in terms of XANES difference spectrum. Secondly, we compute the XANES spectra at three different temperatures, 90 K, 300 K, and 530 K and quantify the change in terms of the difference spectrum. We note that in this compound the tetragonality increases almost monotonically with temperature from 12 K to 570 K without transition to the cubic phase under ambient pressure. A key objective of the current investigation is to gain an understanding of various absorption features in the vicinity of K-edge of V, in terms of valence, local site symmetry, local coordination geometry, local bond distances, charge transfer, and local projected density of states. We consider both the polarized and the unpolarized XANES spectra. In short we have performed a local electronic study, which nicely complements the crystallographic features reported recently in PbVO3.",0503737v1 2006-03-06,Metal-insulator transition in electric field: A viewpoint from the switching effect,"The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on the basis of a phenomenological approach. This model not only allows the qualitative description of the switching mechanism, but it is in quantitative agreement with the experimental results, in particular, with those concerning the critical concentration and threshold field. The mechanism takes into account the dependence of the carrier density on electric field, as well as the scaling of the critical field. Next, we show that such a 'macroscopic' approach can be supported by some microscopic model. The quintessence of this approach consists in the fact that an electronically induced metal-insulator transition may be described in terms of Bardeen-Cooper-Schrieffer (BCS) formalism developed earlier for the charge density wave concept. It is shown that for the combination of both the types of interaction (electron-electron and electron-phonon), the formation of a collective excitation - an electron crystal of charge density wave - in the model of exciton insulator is possible, which, in a general case, can also be accompanied by a structural transition. The results for vanadium dioxide are examined within the frameworks of the developed approach.",0603132v1 2006-08-17,"Photoemission study of (V$_{1-x}$M$_x$)$_2$O$_3$ (M=Cr, Ti)","We present high-resolution bulk-sensitive photoemission spectra of (V$_{1-x}$M$_x$)$_2$O$_3$ (M=Cr, Ti). The measurements were made for the paramagnetic metal (PM), paramagnetic insulator (PI), and antiferromagnetic insulator (AFI) phases of (V$_{1-x}$M$_x$)$_2$O$_3$ with the samples of $x$ = 0, 0.012, and 0.028 for Cr-doping and $x$ = 0.01 for Ti-doping. In the PM phase, we observe a prominent quasiparticle peak in general agreement with theory, which combines dynamical mean-field theory with the local density approximation (LDA+DMFT). The quasiparticle peak shows a significantly larger peak width and weight than in the theory. For both the PI and AFI phases, the vanadium 3d parts of the valence spectra are not simple one peak structures. For the PI phase, there is not yet a good theoretical understanding of these structures. The size of the electron removal gap increases, and spectral weight accumulates in the energy range closer to the chemical potential, when the PI to AFI transition occurs. Spectra taken in the same phases with different compositions show interesting monotonic changes as the dopant concentration increases, regardless of the dopant species. With increased Cr-doping, the AFI phase gap decreases and the PI phase gap increases.",0608380v1 2006-10-24,"Synthesis, Structure, and Ferromagnetism of a New Oxygen Defect Pyrochlore System Lu2V2O_{7-x} (x = 0.40-0.65)","A new fcc oxygen defect pyrochlore structure system Lu2V2O_{7-x} with x = 0.40 to 0.65 was synthesized from the known fcc ferromagnetic semiconductor pyrochlore compound Lu2V2O7 which can be written as Lu2V2O6O' with two inequivalent oxygen sites O and O'. Rietveld x-ray diffraction refinements showed significant Lu-V antisite disorder for x >= 0.5. The lattice parameter versus x (including x = 0) shows a distinct maximum at x ~ 0.4. We propose that these observations can be explained if the oxygen defects are on the O' sublattice of the structure. The magnetic susceptibility versus temperature exhibits Curie-Weiss behavior above 150 K for all x, with a Curie constant C that increases with x as expected in an ionic model. However, the magnetization measurements also show that the (ferromagnetic) Weiss temperature theta and the ferromagnetic ordering temperature T_C both strongly decrease with increasing x instead of increasing as expected from C(x). The T_C decreases from 73 K for x = 0 to 21 K for x = 0.65. Furthermore, the saturation moment at a field of 5.5 T at 5 K is nearly independent of x, with the value expected for a fixed spin 1/2 per V. The latter three observations suggest that Lu2V2O_{7-x} may contain localized spin 1/2 vanadium moments in a metallic background that is induced by oxygen defect doping, instead of being a semiconductor as suggested by the C(x) dependence.",0610680v1 2007-11-26,Quantum fluctuations in high field magnetization of 2D square lattice J1-J2 antiferromagnets,"The J1-J2 square lattice Heisenberg model with spin S=1/2 has three phases with long-range magnetic order and two unconventionally ordered phases depending on the ratio of exchange constants. It describes a number of recently found layered vanadium oxide compounds. A simple means of investigating the ground state is the study of the magnetization curve and high-field susceptibility. We discuss these quantities by using the spin-wave theory and the exact diagonalization in the whole J1-J2 plane. We compare both results and find good overall agreement in the sectors of the phase diagram with magnetic order. Close to the disordered regions the magnetization curve shows strong deviations from the classical linear behaviour caused by large quantum fluctuations and spin-wave approximation breaks down. On the FM side (J1<0) where one approaches the quantum gapless spin nematic ground state this region is surprisingly large. We find that inclusion of second order spin-wave corrections does not lead to fundamental improvement. Quantum corrections to the tilting angle of the ordered moments are also calculated. They may have both signs, contrary to the always negative first order quantum corrections to the magnetization. Finally we investigate the effect of the interlayer coupling and find that the quasi-2D picture remains valid up to |J_\perp/J1| ~ 0.3.",0711.4054v1 2008-01-08,Light Transition Metal Monatomic Chains,"In this paper we investigated structural, electronic and magnetic properties of 3d (light) transition metal (TM) atomic chains using first-principles pseudopotential plane wave calculations. Periodic linear, dimerized linear and planar zigzag chain structures and their short segments consisting of finite number of atoms have been considered. Like Cu, the periodic, linear chains of Mn, Co and Ni correspond to a local shallow minimum. However, for most of the infinite periodic chains, neither linear nor dimerized linear structures are favored; to lower their energy the chains undergo a structural transformation to form planar zigzag and dimerized zigzag geometry. Dimerization in both infinite and finite chains are much stronger than the usual Peierls distortion and appear to depend on the number of 3d-electrons. As a result of dimerization, a significant energy lowering occurs which, in turn, influences the stability and physical properties. Metallic linear chain of Vanadium becomes half-metallic upon dimerization. Infinite linear chain of Scandium also becomes half-metallic upon transformation to zigzag structure. An interplay between the magnetic ground state and atomic as well as electronic structure of the chain has been revealed. The end effects influence the geometry, energetics and magnetic ground state of the finite chains. Structure optimization performed using noncollinear approximation indicates significant differences from the collinear approximation. Variation of the cohesive energy of infinite and finite-size chains with respect to the number of 3d-electrons are found to mimic the bulk behavior pointed out by Friedel. The spin-orbit coupling of finite chains are found to be negligibly small.",0801.1178v1 2008-04-29,Strong frustration due to competing ferromagnetic and antiferromagnetic interactions: magnetic properties of M(VO)2(PO4)2 (M = Ca and Sr),"We present a detailed investigation of the magnetic properties of complex vanadium phosphates M(VO)2(PO4)2 (M = Ca, Sr) by means of magnetization, specific heat, 31P NMR measurements, and band structure calculations. Experimental data evidence the presence of ferro- and antiferromagnetic interactions in M(VO)2(PO4)2 resulting in a nearly vanishing Curie-Weiss temperature \theta_{CW} < 1 K that contrasts with the maximum of magnetic susceptibility at 3 K. Specific heat and NMR measurements also reveal weak exchange couplings with the thermodynamic energy scale J_c = 10-15 K. Additionally, the reduced maximum of the magnetic specific heat indicates strong frustration of the spin system. Band structure calculations show that the spin systems of the M(VO)2(PO4)2 compounds are essentially three-dimensional with the frustration caused by competing ferro- and antiferromagnetic interactions. Both calcium and strontium compounds undergo antiferromagnetic long-range ordering at T_N = 1.5 K and 1.9 K, respectively. The spin model reveals an unusual example of controllable frustration in three-dimensional magnetic systems.",0804.4667v2 2008-05-22,Intrinsic and non-local Gilbert damping in polycrystalline nickel studied by Ti:Sapphire laser fs spectroscopy,"The use of femtosecond laser pulses generated by a Ti:Sapphire laser system allows us to gain an insight into the magnetization dynamics on time scales from sub-picosecond up to 1 ns directly in the time domain. This experimental technique is used to excite a polycrystalline nickel (Ni) film optically and probe the dynamics afterwards. Different spin wave modes (the Kittel mode, perpendicular standing spin-wave modes (PSSW) and dipolar spin-wave modes (Damon-Eshbach modes)) are identified as the Ni thickness is increased. The Kittel mode allows determination of the Gilbert damping parameter alpha extracted from the magnetization relaxation time tau_alpha. The non-local damping by spin currents emitted into a non-magnetic metallic layer of vanadium (V), palladium (Pd) and the rare earth dysprosium (Dy) are studied for wedge-shaped Ni films 1 nm-30 nm. The damping parameter increases from alpha=0.045 intrinsic for nickel to alpha>0.10 for the heavy materials, such as Pd and Dy, for the thinnest Ni films below 10 nm thickness. Also, for the thinnest reference Ni film thickness, an increased magnetic damping below 4 nm is observed. The origin of this increase is discussed within the framework of line broadening by locally different precessional frequencies within the laser spot region.",0805.3495v1 2008-09-10,TiO and VO broad band absorption features in the optical spectrum of the atmosphere of the hot-Jupiter HD209458b,"The presence of titanium oxide (TiO) and vanadium oxide (VO) gas phase species is searched for in the atmosphere of the hot Jupiter HD209458b. We compared a model for the planets transmitted spectrum to multi-wavelength eclipse-depth measurements (from 3000 to 10000 Angstrom), obtained by Sing et al. (2008a) using archived HST-STIS time series spectra. We make use of these observations to search for spectral signatures from extra absorbers in the planet atmosphere between 6000 and 8000 Angstrom. Along with sodium depletion and Rayleigh scattering recently published for this exoplanet atmosphere, an extra absorber of uncertain origin, redward of the sodium lines, resides in the atmosphere of the planet. Furthermore, this planet has a stratosphere experiencing a thermal inversion caused by the capture of optical stellar flux by absorbers that resides at altitude. Recent models have predicted that the presence of TiO and VO in the atmosphere of HD209458b may be responsible for this temperature inversion. Although no specific TiO and VO spectral band head signatures have been identified unambiguously in the observed spectrum, we suggest here that the opacities of those molecules are possible candidates to explain the remaining continuous broad band absorption observed between 6200 and 8000 Angstrom. To match reasonably well the data, the abundances of TiO and VO molecules are evaluated from ten to one thousand times below solar. This upper limit result is in agreement with expected variations with altitude due to depletion effects such as condensation.",0809.1865v1 2008-11-07,Effective Band Structure of Correlated Materials - The Case of VO2,"Vanadium dioxide, VO2, and its metal-insulator transition at T=340K continues to receive considerable interest. The question whether the physics of the insulating low-temperature phase is dominated by the Mott or the Peierls scenario, i.e. by correlation or band effects, is still under debate. A recent cluster dynamical mean field theory calculation [Biermann et al, Phys. Rev. Lett., 94, 026404 (2005)] suggests a combination of both effects, characterizing the transition as of a correlation assisted Peierls type. In this paper we present a detailed analysis of the excitation spectrum of the insulating M1 phase of VO2, based on this calculation. We implement a scheme to analytically continue self-energies from Matsubara to real frequencies, and study the physics of the strong interactions, as well as the corresponding changes with respect to the density functional theory (LDA) band structure. We find that in the M1 phase life-time effects are rather negligible, indeed allowing for an effective band structure description. A frequency independent but orbital dependent potential, constructed as an approximation to the full cluster dynamical mean field self-energy, turns out to satisfactory reproduce the fully interacting one-particle spectrum, acting as a scissors operator which pushes the a1g bonding and egp bands apart and, thus, opening the gap.",0811.1104v1 2009-02-23,Can TiO Explain Thermal Inversions in the Upper Atmospheres of Irradiated Giant Planets?,"Spitzer Space Telescope infrared observations indicate that several transiting extrasolar giant planets have thermal inversions in their upper atmospheres. Above a relative minimum, the temperature appears to increase with altitude. Such an inversion probably requires a species at high altitude that absorbs a significant amount of incident optical/UV radiation. Some authors have suggested that the strong optical absorbers titanium oxide (TiO) and vanadium oxide (VO) could provide the needed additional opacity. However, if regions of the atmosphere are cold enough for Ti and V to be sequestered into solids they might rain out and be severely depleted. With a model of the vertical distribution of a refractory species in gaseous and condensed form, we address the question of whether enough TiO (or VO) could survive aloft in an irradiated planet's atmosphere to produce a thermal inversion. We find that, without significant macroscopic mixing, a heavy species such as TiO -- especially one that can condense in a cold-trap region -- cannot persist in a planet's upper atmosphere. In our model, the amount of macroscopic mixing that would be required to loft TiO to millibar pressures ranges from ~10^7 to ~10^{11} cm^2/s on HD 209458b, HD 149026b, TrES-4, OGLE-TR-56b, and WASP-12b, depending on the planet and on assumed condensate sizes. Such large values may be problematic for the TiO hypothesis. [Abridged]",0902.3995v2 2010-01-20,Theory of Room Temperature Ferromagnet V(TCNE)_x (1.5 < x < 2): Role of Hidden Flat Bands,"Theoretical studies on the possible origin of room temperature ferromagnetism (ferromagnetic once crystallized) in the molecular transition metal complex, V(TCNE)_x (1.510^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several {\mu}s. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.",1306.0292v1 2013-07-23,Orbital superexchange and crystal field simultaneously at play in YVO3: resonant inelastic x-ray scattering at the V L edge and the O K edge,"We report on the observation of orbital excitations in YVO3 by means of resonant inelastic x-ray scattering (RIXS) at energies across the vanadium L3 and oxygen K absorption edges. Due to the excellent experimental resolution we are able to resolve the intra-t2g excitations at 0.1-0.2 eV, 1.07 eV, and 1.28 eV, the lowest excitations from the t2g into the eg levels at 1.86 eV, and further excitations above 2.2 eV. For the intra-t2g excitations at 0.1-0.2 eV, the RIXS peaks show small shifts of the order of 10-40 meV as a function of temperature and of about 13-20 meV as a function of the transferred momentum q||a. We argue that the latter reflects a finite dispersion of the orbital excitations. For incident energies tuned to the oxygen K edge, RIXS is more sensitive to intersite excitations. We observe excitations across the Mott-Hubbard gap and find an additional feature at 0.4 eV which we attribute to two-orbiton scattering, i.e., an exchange of orbitals between adjacent sites. Altogether, these results indicate that both superexchange interactions and the coupling to the lattice are important for a quantitative understanding of the orbital excitations in YVO3.",1307.6027v1 2013-08-21,Measurement of a solid-state triple point at the metal-insulator transition in VO2,"First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis, and cracking. The situation is still worse near a triple point where more than two phases are involved. The famous metal-insulator transition (MIT) in vanadium dioxide, a popular candidate for ultrafast optical and electrical switching applications, is a case in point. Even though VO2 is one of the simplest strongly correlated materials, experimental difficulties posed by the first-order nature of the MIT as well as the involvement of at least two competing insulating phases have led to persistent controversy about its nature. Here, we show that studying single-crystal VO2 nanobeams in a purpose-built nanomechanical strain apparatus allows investigation of this prototypical phase transition with unprecedented control and precision. Our results include the striking finding that the triple point of the metallic and two insulating phases is at the transition temperature, T_tr = T_c, which we determine to be 65.0 +- 0.1 C. The findings have profound implications for the mechanism of the MIT in VO2, but in addition they demonstrate the importance of such an approach for mastering phase transitions in many other strongly correlated materials, such as manganites and iron-based superconductors.",1308.4741v1 2013-11-05,Suppression of ferromagnetism in the La(V$_x$Cr$_{1-x}$)Sb$_3$ system,"To explore the possibility of quantum phase transitions and even quantum criticality in LaCrSb$_3$ based compounds, we performed measurements under pressure as well as a vanadium substitution study. The Curie temperature of LaCrSb$_3$ was found to be invariant under pressure. Although pressure was not able to suppress the ferromagnetism, chemical substitution was used as another parameter to tune the magnetism. We grew La(V$_x$Cr$_{1-x}$)Sb$_3$ (\textit{x} = 0 -- 1.0) single crystals, and studied the series by measurements of temperature and field dependent magnetic susceptibility, magnetization, resistivity, and specific heat. Ferromagnetism has been observed for $x \leq 0.22$, and the system manifests a strong anisotropy in its ordered state. The Curie temperature decreases monotonically as the V concentration increases. For $0.42 \leq x \leq 0.73$, the system enters a new magnetic state at low temperatures, and no magnetic ordering above 1.8 K can be observed for $x \geq 0.88$. The effective moment $\mu_{\rm eff}$/Cr varies only slightly as the V concentration increases, from 3.9 $\mu_{\rm B}$ for $x$ = 0 to 2.9 $\mu_{\rm B}$ for $x$ = 0.88. Features related to quantum criticality have not been observed in the La(V$_x$Cr$_{1-x}$)Sb$_3$ system.",1311.1186v1 2013-12-26,A Novel High-Pressure Monoclinic Metallic Phase of V2O3,"Vanadium sesquioxide, V2O3, is a prototypical metal-to-insulator system where, in temperature-dependent studies, the transition always coincides with a corundum-to-monoclinic structural transition. As a function of pressure, V2O3 follows the expected behavior of increased metallicity due to a larger bandwidth for pressures up to 12.5 GPa. Surprisingly, for higher pressures when the structure becomes unstable, the resistance starts to increase. Around 32.5 GPa at 300 K, we observe a novel pressure-induced corundum-to-monoclinic transition between two metallic phases, showing that the structural phase transition can be decoupled from the metal-insulator transition. Using X-ray Raman scattering, we find that screening effects, which are strong in the corundum phase, become weakened at high pressures. Theoretical calculations indicate that this can be related to a decrease in coherent quasiparticle strength, suggesting that the high-pressure phase is likely a critical correlated metal, on the verge of Mott-insulating behavior.",1312.7063v1 2014-03-20,Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals,"Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.",1403.5225v2 2014-06-10,In situ diffraction study of catalytic hydrogenation of VO2: Stable phases and origins of metallicity,"Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K between a high temperature, tetragonal, metallic state (T) and a low temperature, monoclinic, insulating state (M1), driven by electron-electron and electron-lattice interactions. Intercalation of VO2 with atomic hydrogen has been demonstrated, with evidence that this doping suppresses the transition. However, the detailed effects of intercalated H on the crystal and electronic structure of the resulting hydride have not been previously reported. Here we present synchrotron and neutron diffraction studies of this material system, mapping out the structural phase diagram as a function of temperature and hydrogen content. In addition to the original T and M1 phases, we find two orthorhombic phases, O1 and O2, which are stabilized at higher hydrogen content. We present density functional calculations that confirm the metallicity of these states and discuss the physical basis by which hydrogen stabilizes conducting phases, in the context of the metal-insulator transition.",1406.2704v1 2014-08-25,Cluster spin glass behavior in geometrically frustrated Zn3V3O8,"We report the bulk magnetic properties of a yet unexplored vanadium-based multivalued spinel system, Zn3V3O8. A Curie-Weiss fit of our dc magnetic susceptibility data in the temperature region from 140 to 300 K yields a Curie constant C = 0.75cm3K/mole V, theta CW = -370 K. We have observed a splitting between the zero field cooled ZFC and field cooled FC susceptibility curves below a temperature Tirr of about 6.3 K. The value of the 'frustration parameter' nearly equals to 100 suggests that the system is strongly frustrated. From the ac susceptibility measurements we find a logarithmic variation of freezing temperature (Tf ) with frequency attesting to the formation of a spin glass below Tf . However, the value of the characteristic frequency obtained from the Vogel-Fulcher fit suggests that the ground state is closer to a cluster glass rather than a conventional spin glass. We explored further consequences of the spin glass behavior and observed aging phenomena and memory effect (both in ZFC and FC). We found that a positive temperature cycle erases the memory, as predicted by the hierarchical model. From the heat capacity CP data, a hump-like anomaly was observed in CP /T at about 3.75 K. Below this temperature the magnetic heat capacity shows a nearly linear dependence with T which is consistent with the formation of a spin glass state below Tf in Zn3V3O8.",1408.5702v1 2014-12-17,Inhomogeneity in the ultrafast insulator-to-metal transition dynamics in VO$_2$,"The insulator-to-metal transition (IMT) of the simple binary compound of vanadium dioxide VO$_2$ at $\sim 340$ K has been puzzling since its discovery more than five decades ago. A wide variety of photon and electron probes have been applied in search of a satisfactory microscopic mechanistic explanation. However, many of the conclusions drawn have implicitly assumed a {\em homogeneous} material response. Here, we reveal inherently {\em inhomogeneous} behavior in the study of the dynamics of individual VO$_2$ micro-crystals using a combination of femtosecond pump-probe microscopy with nano-IR imaging. The time scales of the photoinduced bandgap reorganization in the ultrafast IMT vary from $\simeq 40 \pm 8$ fs, i.e., shorter than a suggested phonon bottleneck, to $\sim 200\pm20$ fs, with an average value of $80 \pm 25$ fs, similar to results from previous studies on polycrystalline thin films. The variation is uncorrelated with crystal size, orientation, transition temperature, and initial insulating phase. This together with details of the nano-domain behavior during the thermally-induced IMT suggests a significant sensitivity to local variations in, e.g., doping, defects, and strain of the microcrystals. The combination of results points to an electronic mechanism dominating the photoinduced IMT in VO$_2$, but also highlights the difficulty of deducing mechanistic information where the intrinsic response in correlated matter may not yet have been reached.",1412.5495v1 2014-12-24,Probing the magnetic phases in the Ni-V alloy close to the disordered ferromagnetic quantum critical point with muSR,"Zero (ZF) and longitudinal field (LF) muon spin relaxation data of the {\it d}-metal alloy Ni$_{1-x}$V$_{x}$ are presented at several vanadium concentrations $x$ below and above the critical $x_c \approx 11$% where long-range ferromagnetic (FM) order is suppressed. The clear single precession frequency observed for Ni, as expected for a homogeneous FM, changes to rather damped oscillation with small V substitution at $x=4$%, confirming magnetic inhomogeneities caused by the less magnetic V environments in the magnetic Ni matrix. Furthermore, local fields and spatial field distributions can be estimated to characterize different inhomogeneous regimes developing with $x$ in the FM phase of Ni$_{1-x}$V$_{x}$. In the regime of $x=7-10$% a Kubo Toyabe function well describes the low temperature ZF and LF asymmetry data supporting a static Gaussian field distribution. Closer to the quantum critical concentration a single scale static Kubo Toyabe function with one field distribution is not sufficient to describe the muon relaxation. These data indicate that further changes in spatial distributions and dynamics are evolving as expected within the critical regime of a disordered quantum critical point.",1412.7671v1 2015-03-27,HAADF-STEM Study of Mo/V Distributions in Mo-V-Te-Ta-O M1 Phases and Their Correlations with Surface Reactivity,"The MoVTeTaO M1 phases were prepared by conventional hydrothermal (HT) and microwave-assisted HT synthesis methods (MW) employing two different Ta precursors, Ta ethoxide and a custom-made Ta oxalate complex. The profile intensity analysis of the HAADF-STEM image of M1 phases oriented along [hk0] directions from the surface to bulk region of HAADF-STEM images indicated that the chemical composition of surface ab planes is very similar to their composition in the bulk. The HAADF-STEM image analysis showed that synthesis methods have a significant impact on the Mo/V distribution in the MoVTeTaO M1 phases and their reactivity in propane ammoxidation. Enhanced acrylonitrile (ACN) yield and 1st order irreversible reaction rate constants for propane consumption, normalized to the estimated surface ab plane areas, correlated with increased V content in the proposed catalytic center (S2-S4-S4-S7-S7). These observations lend further support to the idea that multiple VOx sites present in the surface ab planes may be responsible for the activity and selectivity of the M1 phase in propane ammoxidation.",1503.08100v2 2015-06-15,Phase transition in bulk single crystals and thin films of VO2 by nano-infrared spectroscopy and imaging,"We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations but also leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain and symmetry dependent mesoscopic phase inhomogeneity are also discussed. These results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.",1506.04786v1 2015-07-15,Structural anomalies and short-range magnetic correlations in the orbitally degenerated system Sr$_2$VO$_4$,"We report on the electronic ground state of a layered perovskite vanadium oxide Sr$_2$VO$_4$ studied by the combined use of synchrotron radiation x-ray diffraction (SR-XRD) and muon spin rotation/relaxation ($\mu$SR) techniques, where $\mu$SR measurements were extended down to 30 mK. We found an intermediate orthorhombic phase between $T_{\rm c2} \sim$~130 K and $T_{\rm c1} \sim$~100 K, whereas a tetragonal phase appears for $T > T_{\rm c2}$ and $T < T_{\rm c1}$. The absence of long-range magnetic order was confirmed by $\mu$SR at the reentrant tetragonal phase below $T_{\rm c1}$, where the relative enhancement in the $c$-axis length versus that of the $a$-axis length was observed. However, no clear indication of the lowering of the tetragonal lattice symmetry with superlattice modulation, which is expected in the orbital order state with superstructure of $d_{yz}$ and $d_{zx}$ orbitals, was observed by SR-XRD below $T_{\rm c1}$. Instead, it was inferred from $\mu$SR that a magnetic state developed below $T_{\rm c0} \sim$~10 K, which was characterized by the highly inhomogeneous and fluctuating local magnetic fields down to 30 mK. We argue that the anomalous magnetic ground state below $T_{\rm c0}$ originates from the coexistence of ferromagnetic and antiferromagnetic correlations.",1507.04139v1 2015-07-16,$\mathbb{Z}_2$ gauge theory for valence bond solids on the kagome lattice,"We present an effective $\mathbb{Z}_2$ gauge theory that captures various competing phases in spin-1/2 kagome lattice antiferromagnets: the topological $\mathbb{Z}_2$ spin liquid (SL) phase, and the 12-site and 36-site valence bond solid (VBS) phases. Our effective theory is a generalization of the recent $\mathbb{Z}_2$ gauge theory proposed for SL phases by Wan and Tchernyshyov. In particular, we investigate possible VBS phases that arise from vison condensations in the SL. In addition to the 12-site and 36-site VBS phases, there exists 6-site VBS that is closely related to the symmetry-breaking valence bond modulation patterns observed in the recent density matrix renormalization group simulations. We find that our results have remarkable consistency with a previous study using a differnt $\mathbb{Z}_2$ gauge theory. Motivated by the lattice geometry in the recently reported vanadium oxyfluoride kagome antiferromagnet, our gauge theory is extended to incorporate lowered symmetry by inequivalent up- and down-triangles. We investigate effects of this anisotropy on the 12-site, 36-site, and 6-site VBS phases. The 12-site VBS is stable to anisotropy while the 36-site VBS undergoes severe dimer melting. Interestingly, any analogue of the 6-site VBS is not found in this approach. We discuss the implications of these findings and also compare the results with a different type of $\mathbb{Z}_2$ gauge theory used in previous studies.",1507.04747v2 2015-11-18,Iron-Group Abundances in the Metal-Poor Main Sequence Turnoff Star HD~84937,"We have derived new very accurate abundances of the Fe-group elements Sc through Zn (Z = 21-30) in the bright main-sequence turnoff star HD 84937, based on high-resolution spectra covering the visible and ultraviolet spectral regions. New or recent laboratory transition data for 14 species of seven elements have been used. Abundances from more than 600 lines of non-Fe species have been combined with about 550 Fe lines in HD 84937 to yield abundance ratios of high precision. The abundances have been determined from both neutral and ionized transitions, which generally are in agreement with each other. We find no substantial departures from standard LTE Saha ionization balance in this [Fe/H] = -2.32 star. Noteworthy among the abundances are: [Co/Fe] = 0.14 and [Cu/Fe] = -0.83, in agreement with past studies abundance trends in this and other low metallicity stars; and <[Sc,Ti,V/Fe]> = 0.31, which has not been noted previously. A detailed examination of scandium, titanium, and vanadium abundances in large-sample spectroscopic surveys reveals that they are positively correlated in stars with [Fe/H] < -2; HD 84937 lies at the high end of this correlation. These trends constrain the synthesis mechanisms of Fe-group elements. We also examine the GCE abundance trends of the Fe-group elements, including a new nucleosynthesis model with jet-like explosion effects.",1511.05985v1 2016-02-26,Electronic correlations in monolayer VS$_2$,"The layered transition metal dichalcogenide vanadium disulfide (VS$_2$), which nominally has one electron in the $3d$ shell, is potent for strong correlation physics and is possibly another realization of an effective one-band model beyond the cuprates. Here monolayer VS$_2$ in both the trigonal prismatic and octahedral phases is investigated using density functional theory plus Hubbard $U$ (DFT+$U$) calculations. Trigonal prismatic VS$_2$ has an isolated low-energy band that emerges from a confluence of crystal field splitting and direct V--V hopping. Within spin density functional theory, ferromagnetism splits the isolated band of the trigonal prismatic structure, leading to a low-band-gap $S=1/2$ ferromagnetic Stoner insulator; the octahedral phase is higher in energy. Including the on-site interaction $U$ increases the band gap, leads to Mott insulating behavior, and for sufficiently high values stabilizes the ferromagnetic octahedral phase. The validity of DFT and DFT+$U$ for these two-dimensional materials with potential for strong electronic correlations is discussed. A clear benchmark is given by examining the experimentally observed charge density wave (CDW) in octahedral VS$_2$, for which DFT grossly overestimates the bond length differences compared to known experiments; the presence of CDWs is also probed for the trigonal prismatic phase. Finally, we investigate why only the octahedral phase has been observed in experiments and discuss the possibility of realizing the trigonal prismatic phase. Our work suggests trigonal prismatic VS$_2$ is a promising candidate for strongly correlated electron physics that, if realized, could be experimentally probed in an unprecedented fashion due to its monolayer nature.",1602.08483v1 2016-03-01,"High pressure structural, electronic, and optical properties of polymorphic InVO4 phases","In the present work, we report a detailed density functional theory calculation on polymorphic InVO$_4$ phases by means of projector augmented wave method. The computed first-order structural phase transformation from orthorhombic \emph{(Cmcm)} to monoclinic \emph{(P2/c)} structure is found to occur around 5.6 GPa along with a large volume collapse of 16.6$\%$, which is consistent with previously reported experimental data. This transformation also leads to an increase in the coordination number of vanadium atom from 4 to 6. The computed equilibrium and high pressure structural properties of both InVO$_4$ phases, including unit cell parameters, equation of state, and bulk moduli, are in good agreement with the available experimental data. In addition, compressibility is found to be highly anisotropic and the \emph{b}-axis being more compressible than the other for both the structures. Electronic band structures for both the phases were calculated, and the band gap for orthorhombic and monoclinic InVO$_4$ are found to be 4.02 and 1.67 eV, respectively, within the Tran-Blaha Modified Becke-Johnson potential as implemented in linearized augmented planewave method. We further examined the optical properties such as dielectric function, refractive index, and absorption spectra for both the structures. From the implications of these results, it can be proposed that the high pressure InVO$_4$ phase can be more useful than orthorhombic phase for photo catalytic applications.",1603.00240v1 2016-09-07,Vertex coloring of graphs via phase dynamics of coupled oscillatory networks,"While Boolean logic has been the backbone of digital information processing, there are classes of computationally hard problems wherein this conventional paradigm is fundamentally inefficient. Vertex coloring of graphs, belonging to the class of combinatorial optimization represents such a problem; and is well studied for its wide spectrum of applications in data sciences, life sciences, social sciences and engineering and technology. This motivates alternate, and more efficient non-Boolean pathways to their solution. Here, we demonstrate a coupled relaxation oscillator based dynamical system that exploits the insulator-metal transition in vanadium dioxide (VO2), to efficiently solve the vertex coloring of graphs. By harnessing the natural analogue between optimization, pertinent to graph coloring solutions, and energy minimization processes in highly parallel, interconnected dynamical systems, we harness the physical manifestation of the latter process to approximate the optimal coloring of k-partite graphs. We further indicate a fundamental connection between the eigen properties of a linear dynamical system and the spectral algorithms that can solve approximate graph coloring. Our work not only elucidates a physics-based computing approach but also presents tantalizing opportunities for building customized analog co-processors for solving hard problems efficiently.",1609.02079v2 2016-10-15,An Alternative Strategy to Control the Electronic Properties of Bilayer Graphene: Semi-metal to Metal Transition and a 2D Material with Dirac Cone,"The AB-stacked bilayer graphene (BLG) is a pure semiconductor whose band gap and properties can be tuned by various methods such as doping or applying gate voltage. Here we show an alternative method to control the electronic properties of BLG; intercalation of transition metal atoms between the two monolayers graphene (MLG). A theoretical investigation has been performed on two-dimensional MLG, BLG, BLG-intercalated nanostructured materials, all of which are energetically stable. Our study reveals that only MLG and BLG-intercalated with one Vanadium (V) atom (BLG-1V) materials have a Dirac Cone at the K-point. This study reveals a new strategy to control the material properties of BLG to exhibit various behaviors, including: metallic, semi-metallic, and semiconducting by varying the concentration and spin arrangement of the V atoms in BLG. In all the cases, the present DFT calculations show that the 2p$_z$ sub-shells of C atoms in graphene and the 3d$_{yz}$ sub-shells of the V atoms provide the electron density near the Fermi level controlling the material properties of the BLG-intercalated materials. Thus we prove that out-of-plane atoms can influence in plane electronic densities in BLG.",1610.04777v2 2016-10-17,"Structural, magnetic, electric, dielectric, and thermodynamic properties of multiferroic GeV4S8","The lacunar spinel GeV4S8 undergoes orbital and ferroelectric ordering at the Jahn-Teller transition around 30 K and exhibits antiferromagnetic order below about 14 K. In addition to this orbitally driven ferroelectricity, lacunar spinels are an interesting material class, as the vanadium ions form V4 clusters representing stable molecular entities with a common electron distribution and a well-defined level scheme of molecular states resulting in a unique spin state per V4 molecule. Here we report detailed x-ray, magnetic susceptibility, electrical resistivity, heat capacity, thermal expansion, and dielectric results to characterize the structural, electric, dielectric, magnetic, and thermodynamic properties of this interesting material, which also exhibits strong electronic correlations. From the magnetic susceptibility, we determine a negative Curie-Weiss temperature, indicative for antiferromagnetic exchange and a paramagnetic moment close to a spin S = 1 of the V4 molecular clusters. The low-temperature heat capacity provides experimental evidence for gapped magnon excitations. From the entropy release, we conclude about strong correlations between magnetic order and lattice distortions. In addition, the observed anomalies at the phase transitions also indicate strong coupling between structural and electronic degrees of freedom. Utilizing dielectric spectroscopy, we find the onset of significant dispersion effects at the polar Jahn-Teller transition. The dispersion becomes fully suppressed again with the onset of spin order. In addition, the temperature dependencies of dielectric constant and specific heat possibly indicate a sequential appearance of orbital and polar order.",1610.05244v1 2016-10-22,Sensitivity of stellar electron-capture rates to parent neutron number: A case study on a continuous chain of twenty Vanadium isotopes,"Gamow-Teller (GT) strength distributions (B(GT)) in electron-capture (EC) daughters stemming from the parent ground state are computed with the shell-model in the full pf-shell space, with quasi-particle random-phase approximation (QRPA) in the formalism of Krumlinde and M\""oller and with an Approximate Method (AM) for assigning an effective B(GT). These are compared to data available from decay and charge-exchange (CE) experiments across titanium isotopes in the pf-shell from A=43 to A=62, the largest set available for any chain of isotopes in the pf-shell. The present study is the first to examine B(GT) and the associated EC rates across a particular chain of isotopes with the purpose of examining rate sensitivities as neutron number increases. EC rates are also computed for a wide variety of stellar electron densities and temperatures providing concise estimates of the relative size of rate sensitivities for particular astrophysical scenarios. This work underscores the astrophysical motivation for CE experiments in inverse kinematics for nuclei away from stability at the luminosities of future Radioactive Ion Beam Facilities.",1610.06992v1 2016-11-07,Unique catalytic decomposition and reduction of hydrogen peroxide and organic peroxides on magnesia (001) promoted by oxide-metal hybrid nanostructure,"The detection, removal and reduction of hydrogen peroxide is of significant importance for its increasing application in the areas of environment, food, electrochemistry and clinical laboratory. Herein the dissociative adsorption behavior of hydrogen peroxide on ultrathin magnesia (001) films deposited on transition metal is uncovered for the first time by employing periodic density-functional theory calculations with van der Waals corrections. The hydrogen peroxide is dissociated smoothly and reduced to surface hydroxyls on MgO(001)/TM, and the dissociative adsorption energies of all the considered fragmentation configurations are substantially negative, demonstrating dissociation and reduction of hydrogen peroxide on MgO(001)/TM is thermodynamically favorable. The dissociative adsorption energy decreases monotonously with increasing film thickness, demonstrating the lower reactivity of thick oxide films. Moreover, we examined the suitability of several transition metal slabs (molybdenum, silver, vanadium, tungsten and gold) combined with magnesia for splitting hydrogen peroxide. The dissociative adsorption energies enhance when the lattice constants of substrate slabs increase, indicating the chemisorption strength can be tuned by category of metal slabs as well as thickness of oxide film. The mechanism of reactivity enhancement for energetically and dynamically favorable decomposition of hydrogen peroxide on supported magnesia is elucidated by characterizing the geometric structures and electronic properties. The fragmentation and reduction of diethyl peroxide and peroxyacetone are also studied to reveal the catalytic activity of ultrathin magnesia toward splitting organic peroxides. The results are wished to provide useful clue for detecting and reducing hydrogen peroxide and organic peroxides by employing oxide-metal hybrid nanostructure.",1611.01897v2 2017-03-09,Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator,"Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, even at zero magnetic field. To date, the QAHE has been investigated using low-frequency transport measurements. However, transport requires contacting the sample and results can be difficult to interpret due to the presence of parallel conductive paths, via either the bulk or surface, or because additional non-chiral edge channels may exist. Here, we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb)2Te3. We identify features associated with chiral edge magnetoplasmons (EMPs), a signature that robust edge-channels are indeed intrinsic to this material system. Our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for a new, on-chip circuit element of practical importance: the TI, zero-field microwave circulator.",1703.03122v1 2017-03-28,Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications,"Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route for direct production of crystalline VS$_{2}$ nanosheets with sub-10 nm thicknesses and domain sizes of tens of micrometers. The obtained nanosheets feature spontaneous superlattice periodicities and excellent electrical conductivities (~3$\times$10$^{3}$ S cm$^{-1}$), which has enabled a variety of applications such as contact electrodes for monolayer MoS$_{2}$ with contact resistances of ~1/4 to that of Ni/Au metals, and as supercapacitor electrodes in aqueous electrolytes showing specific capacitances as high as 8.6$\times$10$^{2}$ F g$^{-1}$. This work provides fresh insights into the delicate structure-property relationship and the broad application prospects of such metallic 2D materials.",1703.09582v1 2017-04-20,Hydrogenating VO2 with protons in acid solution,"Hydrogenation is an effective way to tune material property1-5. Traditional techniques for doping hydrogen atoms into solid materials are very costly due to the need for noble metal catalysis and high-temperature/pressure annealing treatment or even high energy proton implantation in vacuum condition5-8. Acid solution contains plenty of freely-wandering protons, but it is difficult to act as a proton source for doping, since the protons always cause corrosions by destroying solid lattices before residing into them. Here we achieve a facile way to hydrogenate monoclinic vanadium dioxide (VO2) with protons in acid solution by attaching suitable metal to it. Considering the Schottky contact at the metal/VO2 interface, electrons flow from metal to VO2 due to workfunction difference and simultaneously attract free protons in acid solution to penetrate, forming the hydrogens dopants inside VO2 lattice. This metal-acid treatment constitutes an electron-proton co-doping strategy, which not only protects the VO2 lattice from corrosion, but also causes pronounced insulator-to-metal transitions. In addition, the metal-acid induced hydrogen doping behavior shows a ripple effect, and it can spread contagiously up to wafer-size area (>2 inch) even triggered by a tiny metal particle attachment (~1.0mm). This will stimulate a new way of simple and cost-effective atomic doping technique for some other oxide materials.",1704.06220v2 2017-04-28,"Dirac Cone in two dimensional bilayer graphene by intercalation with V, Nb, and Ta transition metals","Bilayer graphene (BLG) is semiconductor whose band gap and properties can be tuned by various methods such as doping or applying gate voltage. Here, we show how to tune electronic properties of BLG by intercalation of transition metal (TM) atoms between two monolayer graphene (MLG) using a novel dispersion-corrected first-principle density functional theory approach. We intercalated V, Nb, and Ta atoms between two MLG. We found that the symmetry, the spin, and the concentration of TM atoms in BLG-intercalated materials are the important parameters to control and to obtain a Dirac Cone in their band structures. Our study reveals that the BLG intercalated with one Vanadium (V) atom, BLG-1V, has a Dirac Cone at the K-point. In all the cases, the present DFT calculations show that the 2$p_z$ sub-shells of C atoms in graphene and the 3$d_{yz}$ sub-shells of the TM atoms provide the electron density near the Fermi level E$\mathrm{_F}$ which controls the material properties. Thus, we show that out-of-plane atoms can influence in-plane electronic densities in BLG, and enumerate the conditions necessary to control the Dirac point. This study presents a new strategy for controlling the material properties of BLG so that they exhibit various behaviors, including: metal, semi-metal, and semiconductor by varying the concentration and spin arrangement of the TM atoms in BLG while offering insight into the physical properties of 2D BLG-intercalated materials.",1704.08800v4 2017-05-11,Role of 1-D finite size Heisenberg chain in increasing metal to insulator transition temperature in hole rich VO2,"VO2 samples are grown with different oxygen concentrations leading to different monoclinic, M1 and triclinic, T insulating phases which undergo a first order metal to insulator transition (MIT) followed by a structural phase transition (SPT) to rutile tetragonal phase. The metal insulator transition temperature (Tc) was found to be increased with increasing native defects. Vanadium vacancy (VV) is envisaged to create local strains in the lattice which prevents twisting of the V-V dimers promoting metastable monoclinic, M2 and T phases at intermediate temperatures. It is argued that MIT is driven by strong electronic correlation. The low temperature insulating phase can be considered as a collection of one-dimensional (1-D) half-filled band, which undergoes Mott transition to 1-D infinitely long Heisenberg spin 1/2 chains leading to structural distortion due to spin-phonon coupling. Presence of VV creates localized holes (d0) in the nearest neighbor, thereby fragmenting the spin 1/2 chains at nanoscale, which in turn increase the Tc value more than that of an infinitely long one. The Tc value scales inversely with the average size of fragmented Heisenberg spin 1/2 chains following a critical exponent of 2/3, which is exactly the same predicted theoretically for Heisenberg spin 1/2 chain at nanoscale undergoing SPT (spin-Peierls transition). Thus, the observation of MIT and SPT at the same time in VO2 can be explained from our phenomenological model of reduced 1-D Heisenberg spin 1/2 chains. The reported increase (decrease) in Tc value of VO2 by doping with metal having valency less (more) than four, can also be understood easily with our unified model, for the first time, considering finite size scaling of Heisenberg chains.",1705.04012v1 2017-05-11,Nature of the spin liquid ground state in a breathing kagome compound studied by NMR and series expansion,"In the vanadium oxyfluoride compound (NH$_4$)$_2$[C$_7$H$_{14}$N][V$_7$O$_6$F$_{18}$] (DQVOF), the V$^{4+}$ (3d$^1$, $S=1/2$) ions realize a unique, highly frustrated breathing kagome lattice composed of alternately-sized, corner-sharing equilateral triangles. Here we present an $^{17}$O NMR study of DQVOF, which isolates the local susceptibility of the breathing kagome network. By a fit to series expansion we extract the ratio of the interactions within the breathing kagome plane, $J_\triangledown / J_\vartriangle = 0.55(4)$, and the mean antiferromagnetic interaction $\bar{J}=60(7)$~K. Spin lattice, $T_1$, measurements reveal an essentially gapless excitation spectrum with a maximum gap $\Delta / \bar{J}=0.007(7)$. Our study provides new impetus for further theoretical investigations in order to establish whether the gapless spin liquid behavior displayed by DQVOF is intrinsic to its breathing kagome lattice or whether it is due to perturbations to this model, such as a residual coupling of the V$^{4+}$ ions in the breathing kagome planes to the interlayer V$^{3+}$ ($S=1$) spins.",1705.04177v1 2017-06-25,Frustration-driven C4 symmetric orders in a hetero-structured iron-based superconductor,"A subtle balance between competing interactions in strongly correlated systems can be easily tipped by additional interfacial interactions in a heterostructure. This often induces exotic phases with unprecedented properties, as recently exemplified by high-Tc superconductivity in FeSe monolayer on the nonmagnetic SrTiO3. When the proximity-coupled layer is magnetically active, even richer phase diagrams are expected in iron-based superconductors (FeSCs), which however has not been explored due to the lack of a proper material system. One promising candidate is Sr2VO3FeAs, a naturally-assembled heterostructure of a FeSC and a Mott-insulating vanadium oxide. Here, using high-quality single crystals and high-accuracy 75As and 51V nuclear magnetic resonance (NMR) measurements, we show that a novel electronic phase is emerging in the FeAs layer below T0 ~ 155 K without either static magnetism or a crystal symmetry change, which has never been observed in other FeSCs. We find that frustration of the otherwise dominant Fe stripe and V Neel fluctuations via interfacial coupling induces a charge/orbital order with C4-symmetry in the FeAs layers, while suppressing the Neel antiferromagnetism in the SrVO3 layers. These findings demonstrate that the magnetic proximity coupling is effective to stabilize a hidden order in FeSCs and, more generally, in strongly correlated heterostructures.",1706.08157v1 2017-08-14,High-Kinetic Inductance Additive Manufactured Superconducting Microwave Cavity,"Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive manufacturing, `3D printing', opens up a previously inaccessible design space for waveguide resonators. In this manuscript, we present results from the first synthesis of these two technologies in a titanium, aluminum, vanadium (Ti-6Al-4V) superconducting radio frequency resonator which exploits a design unattainable through conventional fabrication means. We find that Ti-6Al-4V has two distinct superconducting transition temperatures observable in heat capacity measurements. The higher transition temperature is in agreement with DC resistance measurements. While the lower transition temperature, not previously known in literature, is consistent with the observed temperature dependence of the superconducting microwave surface impedance. From the surface reactance, we extract a London penetration depth of $8\pm3{\mu}$m - roughly an order of magnitude larger than other titanium alloys and several orders of magnitude larger than other conventional elemental superconductors. This large London penetration depth suggests that Ti-6Al-4V may be a suitable material for high kinetic inductance applications such as single photon counting or parametric amplification used in quantum computing.",1708.04273v1 2017-07-29,Optimizing Thermochromism of Solution-Processed VO$_2$ Nanocomposite Films for Chromogenic Fenestration,"Vanadium (IV) oxide is one of the most promising materials for thermochromic films due to its unique, reversible crystal phase transition from monoclinic (M1) to rutile (R) at its critical temperature (T$_c$) which corresponds to a change in optical properties: above T$_c$, VO$_2$ films exhibit a decreased transmittance for wavelengths of light in the near-infrared region. However, a high transmittance modulation often sacrifices luminous transmittance which is necessary for commercial and residential applications of this technology. In this study, we explore the potential for synthesis of VO$_2$ films in a matrix of metal oxide nanocrystals, using In$_2$O$_3$, TiO$_2$, and ZnO as diluents. We seek to optimize the annealing conditions to yield desirable optical properties. Although the films diluted with TiO$_2$ and ZnO failed to show transmittance modulation, those diluted with In$_2$O$_3$ exhibited strong thermochromism. Our investigation introduces a novel window film consisting of a 0.93 metal ionic molar ratio VO$_2$-In$_2$O$_3$ nanocrystalline matrix, demonstrating a significant increase in luminous transmittance without any measurable impact on thermochromic character. Furthermore, solution-processing mitigates costs, allowing this film to be synthesized 4x-7x cheaper than industry standards. This study represents a crucial development in film chemistry and paves the way for further application of VO$_2$ nanocomposite films in chromogenic fenestration.",1709.06944v1 2018-01-24,Ultrafast orbital manipulation and Mott physics in multi-band correlated materials,"Multiorbital correlated materials are often on the verge of multiple electronic phases (metallic, insulating, super- conducting, charge and orbitally ordered), which can be explored and controlled by small changes of the external parameters. The use of ultrashort light pulses as a mean to transiently modify the band population is leading to fundamentally new results. In this paper we will review recent advances in the field and we will discuss the pos- sibility of manipulating the orbital polarization in correlated multi-band solid state systems. This technique can provide new understanding of the ground state properties of many interesting classes of quantum materials and offers a new tool to induce transient emergent properties with no counterpart at equilibrium. We will address: the discovery of high-energy Mottness in superconducting copper oxides and its impact on our understanding of the cuprate phase diagram; the instability of the Mott insulating phase in photoexcited vanadium oxides; the manipulation of orbital-selective correlations in iron-based superconductors; the pumping of local electronic excitons and the consequent transient effective quasiparticle cooling in alkali-doped fullerides. Finally, we will discuss a novel route to manipulate the orbital polarization in a a k-resolved fashion.",1801.07957v1 2018-05-21,Reconfigurable Mid-Infrared Hyperbolic Metasurfaces using Phase-Change Materials,"Metasurfaces offer the potential to control light propagation at the nanoscale for applications in both free-space and surface-confined geometries. Existing metasurfaces frequently utilize metallic polaritonic elements with high absorption losses, and/or fixed geometrical designs that serve a single function. Here we overcome these limitations by demonstrating a reconfigurable hyperbolic metasurface comprising of a heterostructure of isotopically enriched hexagonal boron nitride (hBN) in direct contact with the phase-change material (PCM) vanadium dioxide (VO2). Spatially localized metallic and dielectric domains in VO2 change the wavelength of the hyperbolic phonon polaritons (HPhPs) supported in hBN by a factor 1.6 at 1450cm-1. This induces in-plane launching, refraction and reflection of HPhPs in the hBN, proving reconfigurable control of in-plane HPhP propagation at the nanoscale15. These results exemplify a generalizable framework based on combining hyperbolic media and PCMs in order to design optical functionalities such as resonant cavities, beam steering, waveguiding and focusing with nanometric control.",1805.08292v1 2018-06-18,Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant,"Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.",1806.06479v2 2018-08-22,Evidence against anomalous compositions for giants in the Galactic Nuclear Star Cluster,"Very strong Sc I lines have been found recently in cool M giants in the Nuclear Star Cluster in the Galactic Center. Interpreting these as anomalously high scandium abundances in the Galactic Center would imply a unique enhancement signature and chemical evolution history for nuclear star clusters, and a potential test for models of chemical enrichment in these objects. We present high resolution K-band spectra (NIRSPEC/Keck II) of cool M giants situated in the solar neighborhood and compare them with spectra of M giants in the Nuclear Star Cluster. We clearly identify strong Sc I lines in our solar neighborhood sample as well as in the Nuclear Star Cluster sample. The strong Sc I lines in M giants are therefore not unique to stars in the Nuclear Star Cluster and we argue that the strong lines are a property of the line formation process that currently escapes accurate theoretical modeling. We further conclude that for giant stars with effective temperatures below approximately 3800 K these Sc I lines should not be used for deriving the scandium abundances in any astrophysical environment until we better understand how these lines are formed. We also discuss the lines of vanadium, titanium, and yttrium identified in the spectra, which demonstrate a similar striking increase in strength below 3500 K effective temperature.",1808.07489v1 2018-10-08,Metasurface reconfiguration through lithium ion intercalation in a transition metal oxide,"In the latest years the optical engineer's toolbox has welcomed a new concept, the metasurface. In a metasurface, properly tailored material inclusions are able to reshape the electromagnetic field of an incident beam. Change of amplitude, phase and polarization can be addressed within a thickness of only a fraction of a wavelength. By means of this concept, a radical gain in compactness of optical components is foreseen, even of the most complex ones; other unique features like that of analog computing have also been identified. With this huge potential ready to be disclosed, lack of tunability is still a main barrier to be broken. Metasurfaces must now be made reconfigurable, i.e. able to modify and memorize their state, possibly with a small amount of energy. In this Communication we report low-energy, self-holding metasurface reconfiguration through lithium intercalation in a vanadium pentoxide layer integrated within the photonic device. By a proper meta-atom design, operation on amplitude and phase of linearly polarized light has been demonstrated. In addition, manipulation of circularly polarized light in the form of tunable chirality and tunable handedness-preserving reflection has been implemented. These operations are accomplished using as low as 50 pJ/{\mu}m^{2}, raising lithium intercalation in transition metal oxides as one of the most energy efficient self-holding tuning mechanisms known so far for metasurfaces, with significant perspectives in the whole field of nanophotonics.",1810.03351v1 2019-01-17,Electron-proton Co-doping Induced Metal-insulator Transition in VO2 Film via Surface Self-assembled Ascorbic Acid Molecules,"Charge doping is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved pronounced phase modulation and stabilized the metallic state of monoclinic vanadium dioxide (VO2) at room temperature, via a novel electron-proton co-doping mechanism driven by surface absorption of self-assembled L-ascorbic acid (AA) molecules. The ionized AA- species in solution donate effective electrons to the adsorbed VO2 surface, which then electrostatically attract surrounding protons to penetrate, and eventually results in stable hydrogen-doped metallic VO2. The variations of phase and electronic structures as well as the electron occupancy of V-3d/O-2p hybrid orbitals were examined by synchrotron characterizations and first-principle theoretical simulations, which explain the formation of stable metallic state. Importantly, the adsorbed molecules protect hydrogen dopants from escaping out of lattice and thereby stabilize the metallic phase for VO2. Such an electron-proton co-doping mechanism driven by suitable molecules absorption would open a new door for engineering properties of correlated oxide materials.",1901.05597v2 2019-01-22,Battery selection for optimal grid-outage resilient photovoltaic and battery systems,"The first and most important purpose of the current research work is to investigate the effects that different battery types have on the optimal configuration of photovoltaic (PV) and battery systems, from both economic and resilience perspectives. Many industry reports, as well as research papers, have already highlighted the crucial role that storage systems have in the coming years in the electricity sector, especially when combined with renewable energy systems (RES). Given the high cost of storage technologies, there is an urgent need for optimizing such integrated energy systems. In this paper, a simulation-based method is adopted and improved, in order to compare different battery types based on their characteristics by considering projected trends in the future. After the introduction of four different battery types, i.e. lead-acid, sodium sulphur, vanadium redox and lithium-ion, the mathematical model for the optimization problem is presented, along with the required explanations. Subsequently, a case study is described and the numerical assumptions are defined. Therein, our specific focus addresses the different values that the four battery types possess in three critical parameters, i.e. battery cost, efficiency and depth of discharge (DoD). Finally, results and discussion are provided in an illustrative and informative way. This model provides a useful guide for relevant future work in the area, and also serves as a baseline for more comprehensive methodologies regarding optimal sizing of photovoltaic and battery systems.",1901.11389v1 2019-03-08,Local Superconductivity in Vanadium Iron Arsenide,"We investigate the chemical substitution of group 5 into BaFe2As2 (122) iron arsenide, in the effort to understand why Fe-site hole doping of this compound (e.g., using group 5 or 6) does not yield bulk superconductivity. We find an increase in c-lattice parameter of the BaFe2As2 with the substitution of V, Nb, or Ta; the reduction in c predicts the lack of bulk superconductivity [1] that is confirmed here through transport and magnetization results. However, our spectroscopy measurements find a coexistence of antiferromagnetic and local superconducting nanoscale regions in V-122, observed for the first time in a transition-metal hole-doped iron arsenide. In BaFe2As2, there is a complex connection between local parameters such as composition and lattice strain, average lattice details, and the emergence of bulk quantum states such as superconductivity and magnetism. [1] L. M. N. Konzen, and A. S. Sefat, J. Phys.: Condens. Matter 29 (2017), 083001.",1903.03660v3 2019-03-26,Isostructural Mott Transition in 2D honeycomb antiferromagnet V$_{0.9}$PS$_3$,"We present the observation of an isostructural Mott insulator-metal transition in van-der-Waals honeycomb antiferromagnet V$_{0.9}$PS$_3$ through high-pressure x-ray diffraction and transport measurements. The MPX$_3$ family of magnetic van-der-Waals materials (M denotes a first row transition metal and X either S or Se) are currently the subject of broad and intense attention, but the vanadium compounds have until this point not been studied beyond their basic properties. We observe insulating variable-range-hopping type resistivity in V$_{0.9}$PS$_3$, with a gradual increase in effective dimensionality with increasing pressure, followed by a transition to a metallic resistivity temperature dependence between 112 and 124 kbar. The metallic state additionally shows a low-temperature upturn we tentatively attribute to the Kondo Effect. A gradual structural distortion is seen between 26-80 kbar, but no structural change at higher pressures corresponding to the insulator-metal transition. We conclude that the insulator-metal transition occurs in the absence of any distortions to the lattice - an isostructural Mott transition in a new class of two-dimensional material, and in strong contrast to the behavior of the other MPX$_3$ compounds.",1903.10971v1 2019-05-16,"Phase composition and transformations in magnetron-sputtered (Al,V)2O3 coatings","Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 {\deg}C. XRD showed three different crystal structures depending on V-metal fraction in the coating: {\alpha}-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure {\gamma}-Al2O3. The microstructure changes from large columnar faceted grains for {\alpha}-V2O3 to smaller equiaxed grains when lowering the vanadium content toward pure {\gamma}-Al2O3. Annealing in air resulted in formation of V2O5 crystals on the surface of the coating after annealing to 500 {\deg}C for 42 at.% V and 700 {\deg}C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure {\gamma}-Al2O3-coating, which transformed to {\alpha}-Al2O3 after annealing to 1100{\deg} C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The latter decreased with increasing V-content, larger than 7 at.% V metal fraction. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings.",1905.06714v2 2019-07-05,Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube,"Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 ${\mu}W$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour.",1907.02681v1 2019-07-30,Energy Conversion via Metal Nanolayers,"Current approaches for electric power generation from nanoscale conducting or semi-conducting layers in contact with moving aqueous droplets are promising as they show efficiencies of around 30 percent, yet, even the most successful ones pose challenges regarding fabrication and scaling. Here, we report stable, all-inorganic single-element structures synthesized in a single step that generate electrical current when alternating salinity gradients flow along its surface in a liquid flow cell. 10 nm to 30 nm thin nanolayers of iron, vanadium, or nickel produce several tens of mV and several microA cm^-2 at aqueous flow velocities of just a few cm s^-1. The principle of operation is strongly sensitive to charge-carrier motion in the thermal oxide nano-overlayer that forms spontaneously in air and then self terminates. Indeed, experiments suggest a role for intra-oxide electron transfer for Fe, V, and Ni nanolayers, as their thermal oxides contain several metal oxidation states, whereas controls using Al or Cr nanolayers, which self-terminate with oxides that are redox inactive under the experimental conditions, exhibit dramatically diminished performance. The nanolayers are shown to generate electrical current in various modes of application with moving liquids, including sliding liquid droplets, salinity gradients in a flowing liquid, and in the oscillatory motion of a liquid without a salinity gradient.",1907.13170v1 2019-07-20,Temperature Tunable Optical Transmission control of VO2 nanostructures by IR based 1-D Photonic crystals as hybrid Photonic absorbers,"Effect of 1-D photonic crystals on optical transmission of VO2 is studied by depositing thin films of VO2 nanoparticles on SiO2/TiO2 distributed Bragg reflectors (DBR) in the near infrared (IR) spectrum as per earlier theoretical predictions of J. Phys. D: Appl. Phys. 51 375102 (2018). Monoclinic VO2 nanoparticles with tuned crystallinity were synthesized by a facile solution processing method. Moderately crystalline (MC) and highly crystalline (HC) VO2 nanostructures were obtained by varying its synthesis temperature and post growth annealing conditions. Both MC VO2 and HC VO2 films exhibit expected reduction in optical transmission in the IR region due to its structural phase transition from monoclinic (insulator) to rutile (metallic) around critical temperature of 68 {\deg}C. By combining VO2 films on a 40% transmitting DBR structure, the average optical transmission further went down to ~ 20%. Number of stacks of DBR plays a key role in such effective reduction of optical transmission in IR. When the number of stacks of DBR is further increased from 4 to 7, optical transmission of metallic VO2 films on DBR nearly vanishes in NearIR spectrum in such vanadium dioxide/1D photonic crystal based composite photonic structures. Such temperature controlled, enhanced, broad band optical response can be a promising design for VO2 nanoparticle based hybrid photonic absorbers for various smart window applications.",1908.02840v2 2019-08-20,Superconductivity in V$_{1-x}$Zr$_x$ alloys]{Evolution of high field superconductivity and high critical current density in the as-cast V$_{1-x}$Zr$_x$ alloys,"We report here the structural, electrical and magnetic properties of as-cast V$_{1-x}$Zr$_x$ alloys ($x$ =0 - 0.4) at low temperatures. We observe that all the alloys undergo successive peritectic and eutectic reactions during cooling from the melt which leads to the formation of five phases, namely, a body centred cubic $\beta$-V phase, two phases with slightly different compositions having face centred cubic ZrV$_2$ structure, a hexagonal closed packed $\alpha$-Zr phase, and the $\beta$-Zr precipitates. The amount of each phase is found to be dependent on the concentration of zirconium in vanadium. The $\beta$-V and ZrV$_2$ phases show superconductivity below 5.3~K and 8.5~K respectively. We show that the critical current density is large for V-rich V$_{1-x}$Zr$_x$ alloys with $x >$ 0.1. The grain boundaries generated from the eutectic reaction, and the point defects formed due to the variation in the composition are found to be responsible for the pinning of flux lines in low and high magnetic fields respectively. Our studies reveal that the choice of the composition and the heat treatment which leads to eutectic reaction are important in improving the critical current density in this alloy system.",1908.07288v1 2019-09-23,Electronic and Magnetic Characterization of Epitaxial VSe$_2$ Monolayers on Superconducting NbSe$_2$,"Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide (VSe$_2$). More significantly, the in-situ growth in ultra-high vacuum (UHV) allows to produce a clean and an atomically sharp interfaces. Combining different characterization techniques and density-functional theory (DFT) calculations, we investigate the electronic and magnetic properties of VSe$_2$ on NbSe$_2$. Low temperature scanning tunneling microscopy (STM) measurements demonstrate a reduction of the superconducting gap on VSe$_2$ layer. This together with the lack of charge density wave signatures indicates magnetization of the sheet, but not of a conventional itinerant ferromagnet.",1909.10208v3 2019-09-27,Field-Effect Control of Metallic Superconducting Systems,"Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features have been explained by simple charge accumulation/depletion. In 2018, electric field control of supercurrent in conventional metallic superconductors has been demonstrated in a range of electric fields where the induced variation of charge carrier concentration in metals is negligibly small. In fact, no changes of normal state resistance and superconducting critical temperature were reported. Here, we review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this unexplained phenomenon. We will start by presenting the seminal results on superconducting BCS wires and nano-constriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum and vanadium. Then, we show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors suggesting that the presence of induced superconducting correlations are enough to see this unconventional field-effect. Later, we present the control of the interference pattern in a superconducting quantum interference device indicating the coupling of the electric field with thesuperconducting phase. Among the possible applications of the presented phenomenology, we conclude this review by proposing some devices that may represent a breakthrough in superconducting quantum and classical computation.",1909.12721v2 2019-11-01,Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices,"Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor devices",1911.00460v2 2019-12-15,Orbital order and electron itinerancy in CoV$_{2}$O$_{4}$ and Mn$ _{0.5} $Co$ _{0.5} $V$_{2}$O$_{4}$ from first principles,"In view of the recent experimental predictions of a weak structural transition in CoV$_{2}$O$_{4}$ we explore the possible orbital order states in its low temperature tetragonal phases from first principles density functional theory calculations. We observe that the tetragonal phase with I4$_1/amd$ symmetry is associated with an orbital order involving complex orbitals with a reasonably large orbital moment at Vanadium sites while in the phase with I4$_1/a$ symmetry, the real orbitals with quenched orbital moment constitute the orbital order. Further, to study the competition between orbital order and electron itinerancy we considered Mn$_{0.5}$Co$_{0.5}$V$_{2}$O$_{4}$ as one of the parent compounds, CoV$_{2}$O$_{4}$, lies near itinerant limit while the other, MnV$_{2}$O$_{4}$, lies deep inside the orbitally ordered insulating regime. Orbital order and electron transport have been investigated using first principles density functional theory and Boltzmann transport theory in CoV$_{2}$O$_{4}$, MnV$_{2}$O$_{4}$ and Mn$_{0.5}$Co$_{0.5}$V$_{2}$O$_{4}$. Our results show that as we go from MnV$_{2}$O$_{4}$ to CoV$_{2}$O$_{4}$ there is enhancement in the electron's itinerancy while the nature of orbital order remains unchanged.",1912.07051v1 2019-12-27,"Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$","The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $\Omega^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($\sigma_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets.",1912.12288v1 2020-01-12,Spatial correlation of the thermally generated electromagnetic field in layered media,"A general formulation for the cross-spectral density tensor enabling calculation of the spatial correlation of the thermally generated electromagnetic field in layered media is derived. The formulation is based on fluctuational electrodynamics, and is thus applicable in the near and far field of heat sources. The resulting cross-spectral density tensor is written in terms of a single integration over the parallel wavevector, as the angular integrations leading to numerical instability are evaluated analytically. Using this formulation, the spatial correlation length in the near field of a film made of silicon carbide (SiC) supporting surface phonon-polaritons (SPhPs) in the infrared is analyzed. It is shown that the spatial correlation length of a SiC heat source suspended in vacuum decreases substantially by decreasing its thickness owing to SPhP coupling. In the limit of a 10-nm-thick SiC film, the spatial correlation length is similar to that of a blackbody. The results also reveal that it is possible to control the spatial coherence of a thin SiC heat source via dielectric and metallic substrates, respectively allowing and preventing SPhP coupling. This suggests that active modulation of thermal emission via thin films supporting surface polaritons in the infrared is possible by using a phase change material substrate such as vanadium dioxide.",2001.03999v1 2020-01-28,Evolution of superconductivity and antiferromagnetic order in Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$,"The vanadium doping effects on superconductivity and magnetism of iron pnictides are investigated in Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$ by transport, susceptibility and neutron scattering measurements. The doping of magnetic impurity V causes a fast suppression of superconductivity with T$_c$ reduced at a rate of 7.4~K/1\%V. On the other hand, the long-range commensurate $C$-type antiferromagnetic order is recovered upon the V doping. The value of ordered magnetic moments of Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$ follows a dome-like evolution versus doping concentration x. A possible Griffiths-type antiferromagnetic region of multiple coexisting phases in the phase diagram of Ba(Fe$_{0.92-x}$Co$_{0.08}$V$_x$)$_2$As$_2$ is identified, in accordance with previous theoretical predictions based on a cooperative behavior of the magnetic impurities and the conduction electrons mediating the Ruderman-Kittel-Kasuya-Yosida interactions between them.",2001.10151v1 2020-02-18,Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants,"One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.",2002.07333v1 2020-03-05,Massively strained VO2 thin film growth on RuO2,"Strain engineering vanadium dioxide thin films is one way to alter this material's characteristic first order transition from semiconductor to metal. In this study we extend the exploitable strain regime by utilizing the very large lattice mismatch of 8.78 % occurring in the VO$_2$/RuO$_2$ system along the c axis of the rutile structure. We have grown VO$_2$ thin films on single domain RuO$_2$ islands of two distinct surface orientations by atomic oxygen-supported reactive MBE. These films were examined by spatially resolved photoelectron and x-ray absorption spectroscopy, confirming the correct stoichiometry. Low energy electron diffraction then reveals the VO$_2$ films to grow indeed fully strained on RuO$_2$(110), exhibiting a previously unreported ($2\times2$) reconstruction. On TiO$_2$(110) substrates, we reproduce this reconstruction and attribute it to an oxygen-rich termination caused by the high oxygen chemical potential. On RuO$_2$(100) on the other hand, the films grow fully relaxed. Hence, the presented growth method allows for simultaneous access to a remarkable strain window ranging from bulk-like structures to massively strained regions.",2003.02723v1 2020-01-06,Tunable Casimir equilibria with phase change materials: from quantum trapping to its release,"A stable suspension of nanoscale particles due to the Casimir force is of great interest for many applications such as sensing, non-contract nano-machines. However, the suspension properties are difficult to change once the devices are fabricated. Vanadium dioxide (VO$_2$) is a phase change material, which undergoes a transition from a low-temperature insulating phase to a high-temperature metallic phase around a temperature of 340 K. In this work, we study Casimir forces between a nanoplate (gold or Teflon) and a layered structure containing a VO$_2$ film. It is found that stable Casimir suspensions of nanoplates can be realized in a liquid environment, and the equilibrium distances are determined, not only by the layer thicknesses but also by the matter phases of VO$_2$. Under proper designs, a switch from quantum trapping of the gold nanoplate (""on"" state) to its release (""off"" state) as a result of the metal-to-insulator transition of VO$_2$, is revealed. On the other hand, the quantum trapping and release of a Teflon nanoplate is found under the insulator-to-metal transition of VO$_2 $. Our findings offer the possibility of designing switchable devices for applications in micro-and nano-electromechanical systems.",2003.04100v1 2020-03-14,Orbital localization error of density functional theory in shear properties of vanadium and niobium,"It is believed that the density functional theory (DFT) describes most elements with s, p and d orbitals very well, except some materials that having strongly localized and correlated valence electrons. In this work, we find that the widely employed exchange-correlation (xc) functionals, including LDA, GGA and meta-GGA, underestimate the shear modulus and phase stability of V and Nb greatly. The advanced hybrid functional that is usually better for correlated system, on the other hand, completely fails in these two simple metals. This striking failure is revealed due to the orbital localization error in GGA, which is further deteriorated by hybrid functionals. This observation is corroborated by a similar failure of DFT+U and van der Waals functionals when applied to V and Nb. To remedy this problem, an semi-empirical approach of DFT+J is proposed which can delocalize electrons by facilitating the on-site exchange. Furthermore, it is observed that including density derivatives slightly improves the performance of the semi-local functionals, with meta-GGA outperforms GGA, and the latter is better than LDA. This discovery indicates the possibility and necessity to include higher-order density derivatives beyond the Laplacian level for the purpose to remove the orbital localization error (mainly from d orbitals) and delocalization error (mainly from s and p orbitals) completely in V and Nb, so that to achieve a better description of their electronic structures. The same strategy can be applied to other d electron system and f electron system.",2003.06626v1 2020-03-16,Dynamically Reconfigurable Microwave Circuits Leveraging Abrupt Phase-Change Material,"This article proposes a concept for dynamically reconfigurable distributed microwave circuits by leveraging the abrupt conductivity transition in phase-change materials (PCM). Metallic surface-inclusions (<<$\lambda$) are embedded in the PCM film$-$vanadium dioxide (VO2)$-$to provide low-loss and reconfigurability. To validate this concept, a variety of co-planar waveguide transmission lines are designed and fabricated with metallic surface-inclusions in VO2 films, and the lines' performance are characterized up to 50 GHz. The measured results are used to develop a transmission-line based model and an equivalent circuit model of the VO2 with surface-inclusions to aid in the rapid design of new structures. Additionally, an electromagnetic model was developed and indicates that loss can be close to that of conventional metallic distributed circuits with 100 to 200 nm thick VO2 films. With these thicker films, two practical realizations of this concept were designed and simulated: a tunable dipole from 2.13 to 9.07 GHz and a tunable triple-stub matching network from 5 to 40 GHz with high $|\Gamma|$. Therefore, the proposed method appears viable for the realization of arbitrary programmable distributed circuits and antennas in the microwave and low-millimeter-wave bands.",2003.07264v1 2020-04-09,Magnetic Damping in Epitaxial Fe Alloyed with Vanadium and Aluminum,"To develop low-moment, low-damping metallic ferromagnets for power-efficient spintronic devices, it is crucial to understand how magnetic relaxation is impacted by the addition of nonmagnetic elements. Here, we compare magnetic relaxation in epitaxial Fe films alloyed with light nonmagnetic elements of V and Al. FeV alloys exhibit lower intrinsic damping compared to pure Fe, reduced by nearly a factor of 2, whereas damping in FeAl alloys increases with Al content. Our experimental and computational results indicate that reducing the density of states at the Fermi level, rather than the average atomic number, has a more significant impact in lowering damping in Fe alloyed with light elements. Moreover, FeV is confirmed to exhibit an intrinsic Gilbert damping parameter of $\simeq$0.001, among the lowest ever reported for ferromagnetic metals.",2004.04840v3 2020-05-18,Enhanced Infrared Emission by Thermally Switching the Excitation of Magnetic Polariton with Scalable Microstructured VO2 Metasurfaces,"Dynamic radiative cooling attracts fast-increasing interest due to its adaptability to changing environment and promises for more energy-savings than the static counterpart. Here we demonstrate enhanced infrared emission by thermally switching the excitation of magnetic polariton with microstructured vanadium dioxide (VO2) metasurfaces fabricated via scalable and etch-free processes. Temperature-dependent infrared spectroscopy clearly shows that the spectral emittance of fabricated tunable metasurfaces at wavelengths from 2 to 6 um is significantly enhanced when heated beyond its phase transition temperature, where the magnetic polariton is excited with metallic VO2. The tunable emittance spectra are also demonstrated to be insensitive to incidence and polarization angles such that the VO2 metasurface can be treated as a diffuse infrared emitter. Numerical optical simulation and analytical inductance-capacitance model elucidate the suppression or excitation of magnetic polariton with insulating or metallic VO2 upon phase transition. The effect of enhanced thermal emission with the tunable VO2 metasurface is experimentally demonstrated with a thermal vacuum test. For the same heating power of 0.2 W, the steady-state temperature of the tunable VO2 metasurface emitter after phase transition is found to be 20degC lower than that of a reference V2O5 emitter whose static spectral emittance is almost the same as that of the VO2 metasurface before phase transition. The radiative thermal conductance for the tunable metasurface emitter is found to be 3.96 W/m2K with metallic VO2 at higher temperatures and 0.68 W/m2K with insulating VO2 at lower temperatures, clearly demonstrating almost six-fold enhancement in radiative heat dissipation.",2005.08913v1 2020-06-05,Ultrathin broadband reflective optical limiter,"Optical limiters are nonlinear devices that feature decreasing transmittance with increasing incident optical intensity, and thus can protect sensitive components from high-intensity illumination. The ideal optical limiter reflects rather than absorbs light in its active (""limiting"") state, minimizing risk of damage to the limiter itself. Previous efforts to realize reflective limiters were based on embedding nonlinear layers into relatively thick multilayer photonic structures, resulting in substantial fabrication complexity, reduced speed and, in some instances, limited working bandwidth. We overcome these tradeoffs by using the insulator-to-metal transition in vanadium dioxide (VO2) to achieve intensity-dependent modulation of resonant transmission through aperture antennas. Due to the dramatic change of optical properties across the insulator-to-metal transition, low-quality-factor resonators were sufficient to achieve high on-off ratios in device transmittance. As a result, our ultra-thin reflective limiter (thickness ~1/100 of the free-space wavelength) is broadband in terms of operating wavelength (> 2 um at 10 um) and angle of incidence (up to ~50$\deg$ away from the normal).",2006.03595v3 2020-06-23,3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits,"The article proves first that the constant quality factor (Q) contours for passive circuits, while represented on a 2D Smith chart, form circle arcs on a coaxal circle family. Furthermore, these circle arcs represent semi-circles families in the north hemisphere while represented on a 3D Smith chart. On the contrary we show that the constant Q contours for active circuits with negative resistance form complementary circle arcs on the same family of coaxal circles in the exterior of the 2D Smith chart. Also, we find out that these constant Q contours represent complementary semi-circles in the south hemisphere while represented on the 3D Smith chart for negative resistance circuits. The constant Q - computer aided design (CAD) implementation of the Q semi-circles on the 3D Smith chart is then successfully used to evaluate the quality factor variations of newly fabricated Vanadium dioxide inductors first, directly from their reflection coefficient, as the temperature is increased from room temperature to 50 degrees Celsius ({\deg}C). Thus, a direct multi-parameter frequency dependent analysis is proposed including Q, inductance and reflection coefficient for inductors. Then, quality factor direct analysis is used for two tunnel diode small signal equivalent circuits analysis, allowing for the first time the Q and input impedance direct analysis on Smith chart representation of a circuit, including negative resistance",2006.13315v1 2020-07-03,Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers,"Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic doping states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.",2007.01505v1 2020-07-06,Sub-picosecond all-optical switching in a hybrid VO2:silicon waveguide at 1550 nm,"Achieving ultrafast all-optical switching in a silicon waveguide geometry is a key milestone on the way to an integrated platform capable of handling the increasing demands for higher speed and higher capacity for information transfer. Given the weak electro-optic and thermo-optic effects in silicon, there has been intense interest in hybrid structures in which that switching could be accomplished by integrating another material into the waveguide, including the phase-changing material, vanadium dioxide (VO2). It has long been known that the phase transition in VO2 can be triggered by ultrafast laser pulses, and that pump-laser fluence is a critical parameter governing the recovery time of thin films irradiated by femtosecond laser pulses near 800 nm. However, thin-film experiments are not a priori reliable guides to using VO2 for all-optical switching in on-chip silicon photonics because of the large changes in VO2 optical constants in the telecommunications band, the requirement of low insertion loss, and the limits on switching energy permissible in integrated photonic systems. Here we report the first measurements to show that the reversible, ultrafast photo-induced phase transition in VO2 can be harnessed to achieve sub-picosecond switching when small VO2 volumes are integrated in a silicon waveguide as a modulating element. Switching energies above threshold are of order 600 fJ/switch. These results suggest that VO2 can now be pursued as a strong candidate for all-optical switching with sub-picosecond on-off times.",2007.02812v1 2020-08-14,Laser Cooling of Transition Metal Atoms,"We propose the application of laser cooling to a number of transition-metal atoms, allowing numerous bosonic and fermionic atomic gases to be cooled to ultra-low temperatures. The non-zero electron orbital angular momentum of these atoms implies that strongly atom-state-dependent light-atom interactions occur even for light that is far-detuned from atomic transitions. At the same time, many transition-metal atoms have small magnetic dipole moments in their low-energy states, reducing the rate of dipolar-relaxation collisions. Altogether, these features provide compelling opportunities for future ultracold-atom research. Focusing on the case of atomic titanium, we identify the metastable $a ^5F_5$ state as supporting a $J \rightarrow J+1$ optical transition with properties similar to the D2 transition of alkali atoms, and suited for laser cooling. The high total angular momentum and electron spin of this state suppresses leakage out of the the nearly closed optical transition to a branching ratio estimated below $\sim 10^{-5}$. Following the pattern exemplified by titanium, we identify optical transitions that are suited for laser cooling of elements in the scandium group (Sc, Y, La), the titanium group (Ti, Zr), the vanadium group (V, Nb), the manganese group (Mn, Tc), and the iron group (Fe, Ru).",2008.06147v4 2020-08-14,Metallic Diluted Dimerization in VO2 Tweeds,"The observation of electronic phase separation textures in vanadium dioxide (VO2), a prototypical electron-correlated oxide, has recently added new perspectives on the long standing debate about its metal-insulator transition and its applications. Yet, the lack of atomically-resolved information on phases accompanying such complex patterns still hinders a comprehensive understanding of the transition and its implementation in practical devices. In this work, atomic resolution imaging and spectroscopy unveils the existence of ferroelastic tweed structures on ~5 nm length scales, well below the resolution limit of currently employed spectroscopic imaging techniques. Moreover, density functional theory calculations show that such fine tweeds are formed by a metallic structure, formed by partially dimerized V-chains, that appears tetragonal (rutile) on average, but is locally monoclinic. These observations suggest that the metal/insulator coexistence among low-symmetry forms of VO2 is driven by lattice degrees of freedom, and provide a multiscale perspective for the interpretation of existing data, whereby phase coexistence and structural intermixing can occur all the way down to the atomic scale.",2008.06548v2 2020-08-20,Magnetic Two-Dimensional Chromium Trihalides: A Theoretical Perspective,"The discovery of ferromagnetic order in monolayer 2D crystals has opened a new venue in the field of two dimensional (2D) materials. 2D magnets are not only interesting on their own, but their integration in van der Waals heterostructures allows for the observation of new and exotic effects in the ultrathin limit. The family of Chromium trihalides, CrI$_3$, CrBr$_3$ and CrCl$_3$, is, so far, the most studied among magnetic 2D crystals. In this mini-review, we provide a perspective of the state of the art of the theoretical understanding of magnetic 2D trihalides, most of which will also be relevant for other 2D magnets, such as vanadium trihalides. We discuss both the well-established facts, such as the origin of the magnetic moment and magnetic anisotropy and address as well open issues such as the nature of the anisotropic spin couplings and the magnitude of the magnon gap. Recent theoretical predictions on Moir\' e magnets and magnetic skyrmions are also discussed. Finally, we give some prospects about the future interest of these materials and possible device applications.",2008.08855v2 2020-10-09,"An exploratory view of water quality and sediment characteristics in Musa Estuary, the Persian Gulf","The results of mentioned physicochemical and biological analysis show that in more polluted sampling points, the number of resistance benthos (Bivalves) are more than other points of the study area. Heavy metal concentration in sediment is between 10 to 1000 times more than water samples especially for Arsenic, Mercury, and Vanadium. Dissolved Oxygen is acceptable all over the study area (more than 4 mg/L) based on environmental quality standards for dissolved oxygen which present the range of 2-9 mg/l for sensitive aquatic lives to less sensitive ones. However the presence of chemicals causes increase in the value of Chemical Oxygen Demand (around 500 to 1000 mg/L) and consequent decrease in water purification ability Nutrient uptake capacity which shown as the ratio of Nitrogen to phosphorus is appropriate (around 6) in parts of Musa estuary with more than 3 meters depth . The study area is a semi-closed tide-dominant water body with shallow depth, in comparison to the oceans. A 2-D modelling is applied to simulate current speed and direction. The results of this modelling shows except in the creeks, we have relatively suitable circulation of water in the estuary and current speed may exceed 0.8 m/s. It means Musa estuary is not a dead zone and in some parts which have enough water circulation and nutrient uptake for aquatic life, but huge amount of heavy metal (especially Mercury) in the sediment and water samples, indicates that all aquatic bodies overwhelmed by dangerous heavy metals.",2010.04669v1 2020-10-20,Pressure-induced huge increase of Curie temperature of the van der Waals ferromagnet VI3,"Evolution of magnetism in single crystals of the van der Waals compound VI3 in external pressure up to 7.3 GPa studied by measuring magnetization and ac magnetic susceptibility is reported. Four magnetic phase transitions, at T1 = 54.5 K, T2 = 53 K, TC = 49.5 K, and TFM = 26 K, respectively have been observed at ambient pressure. The first two have been attributed to the onset of ferromagnetism in specific crystal-surface layers. The bulk ferromagnetism is characterized by the magnetic ordering transition at Curie temperature TC and the transition between two different ferromagnetic phases TFM, accompanied by a structure transition from monoclinic to triclinic symmetry upon cooling. The pressure effects on magnetic parameters were studied with three independent techniques. TC was found to be almost unaffected by pressures up to 0.6 GPa whereas TFM increases rapidly with increasing pressure and reaches TC at a triple point at ~ 0.85 GPa. At higher pressures, only one magnetic phase transition is observed moving to higher temperatures with increasing pressure to reach 99 K at 7.3 GPa. In contrast, the low-temperature bulk magnetization is dramatically reduced by applying pressure (by more than 50% at 2.5 GPa) suggesting a possible pressure-induced reduction of vanadium magnetic moment. We discussed these results in light of recent theoretical studies to analyze exchange interactions and provide how to increase the Curie temperature of VI3.",2010.10319v1 2020-11-13,CsV$_3$Sb$_5$: a $\mathbb{Z}_2$ topological kagome metal with a superconducting ground state,"Recently discovered alongside its sister compounds KV$_3$Sb$_5$ and RbV$_3$Sb$_5$, CsV$_3$Sb$_5$ crystallizes with an ideal kagome network of vanadium and antimonene layers separated by alkali metal ions. This work presents the electronic properties of CsV$_3$Sb$_5$, demonstrating bulk superconductivity in single crystals with a T$_{c} = 2.5$K. The normal state electronic structure is studied via angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), which categorize CsV$_3$Sb$_5$ as a $\mathbb{Z}_2$ topological metal. Multiple protected Dirac crossings are predicted in close proximity to the Fermi level ($E_F$), and signatures of normal state correlation effects are also suggested by a high temperature charge density wave-like instability. The implications for the formation of unconventional superconductivity in this material are discussed.",2011.06745v1 2020-12-10,"Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5","Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and induced superconductivity over long junction lengths. Through magnetoresistance and current vs. phase measurements, we observed magnetic field sweeping direction dependent magnetoresistance, and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field, but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K1-xV3Sb5 which influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology.",2012.05898v3 2020-12-19,Parallelising Electrocatalytic Nitrogen Fixation Beyond Heterointerfacial Boundary,"The nitrogen (N2) reduction reaction (NRR) is an eco-friendly alternative to the Haber-Bosch process to produce ammonia (NH3) with high sustainability. However, the significant magnitude of uphill energies in the multi-step NRR pathways is a bottleneck of its serial reactions. Herein, the concept of a parallelized reaction is proposed to actively promote NH3 production via the NRR using a multi-phase vanadium oxide-nitride (V2O3/VN) hybrid system. Density functional theory calculations revealed that the V2O3/VN junction parallelizes NRR pathways by exchanging intermediate N2H4* and NH2* products to avoid massive uphill energies towards final NH3 generation. Such an exchange is driven by the difference in coverage of the two species. The impact of the reaction parallelization strategy for multi-step nitrogen reduction is demonstrated with the V2O3/VN junction by an increased ammonia yield rate of 18.36 micro mol h^-1 cm^-2 and a Faraday efficiency (FE) of 26.62% at -0.3 V versus a reversible hydrogen electrode in a 0.1 M aqueous KOH electrolyte, of which FE value exhibits 16.95 times and 6.22 times higher than that of single-phase V2O3 and VN, respectively. The introduction of multi-phase oxides/nitrides into a transition metal-based electrocatalyst can thus be a promising approach to realizing an alternative method for N2 fixation.",2012.10625v2 2020-12-22,Orbital Rotations induced by Charges of Polarons and Defects in Doped Vanadates,"We explore the competiton of doped holes and defects that leads to the loss of orbital order in vanadate perovskites. In compounds such as La$_{1-{\sf x}}$Ca$_{\,\sf x}$VO$_3$ spin and orbital order result from super-exchange interactions described by an extended three-orbital degenerate Hubbard-Hund model for the vanadium $t_{2g}$ electrons. Long-range Coulomb potentials of charged Ca$^{2+}$ defects and $e$-$e$ interactions control the emergence of defect states inside the Mott gap. The quadrupolar components of the Coulomb fields of doped holes induce anisotropic orbital rotations of degenerate orbitals. These rotations modify the spin-orbital polaron clouds and compete with orbital rotations induced by defects. Both mechanisms lead to a mixing of orbitals, and cause the suppression of the asymmetry of kinetic energy in the $C$-type magnetic phase. We find that the gradual decline of orbital order with doping, a characteristic feature of the vanadates, however, has its origin not predominantly in the charge carriers, but in the off-diagonal couplings of orbital rotations induced by the charges of the doped ions.",2012.11919v1 2021-01-12,Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering,"Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy we demonstrate a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a colossal change in room temperature resistivity (DR/R up to 100,000 %) and a broad range of optical constant values, as consequence of a strain-modulated bandgap. We propose a new phase diagram for pure and Cr-doped V2O3 thin films with the engineered in-plane lattice constant as a tuneable parameter. Our results demonstrate that controlling phase transitions in correlated systems by epitaxial strain offers a radical new approach to create the next generation of Mott devices.",2101.04409v1 2021-01-30,Gate control of superconductivity in mesoscopic all-metallic devices,"It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results which provide information regarding a possible thermal origin of the effect: in the first place, we review experiments performed on high critical temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools such as, e. g., a half-wave rectifier. In a second part, we discuss the origin of the gating effect by showing the gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate by means of finite element simulations and compare the results with experimental data. Finally, the presented data provide a strong indication regarding the unlikelihood of thermal origin of the gating effect.",2102.00215v2 2021-02-02,Pressure-induced 1T to 3R structural phase transition in metallic VSe2: X-ray diffraction and first-principles theory,"We study pressure-induced structural evolution of vanadium diselenide (VSe2), a 1T polymorphic member of the transition metal di-chalcogenide (TMD) family using synchrotron-based powder X-ray diffraction (PXRD) and first-principles density functional theory (DFT). Our XRD results reveal anomalies at P ~4 GPa in c/a ratio, V-Se bond length and Se-V-Se bond angle signalling an isostructural transition. This is followed by a first order structural transition from 1T (space group P-3m1) phase to a 3R (space group R-3m) phase at P ~11 GPa due to sliding of adjacent Se-V-Se layers. We present various scenarios to understand the experimental results within DFT and find that the 1T to 3R transition can be captured only after inclusion of enthalpic correction associated with errors in cell volume with underestimated transition pressure. The abrupt increase in the Debye-Waller factors of Se atoms by a factor of ~4 and hence the anharmonic effects across the structural transition pressure are hitherto not reported so far and hint a possible way to understand the mismatch between the experimental and theoretical transition pressure values.",2102.01560v2 2021-03-24,Effect of Electric Fields on the Director Field and Shape of Nematic Tactoids,"Tactoids are spindle shaped-droplets of a uniaxial nematic phase suspended in the co-existing isotropic phase. They are found in dispersions of a wide variety of elongated colloidal particles, including actin, fd virus, carbon nanotubes, vanadium peroxide and chitin nanocrystals. Recent experiments on tactoids of chitin nanocrystals in water show that electric fields can very strongly elongate tactoids even though the dielectric properties of the co-existing isotropic and nematic phases differ only subtly. We develop a model for partially bipolar tactoids, where the degree of bipolarness of the director field is free to adjust to optimize the sum of the elastic, surface and Coulomb energies of the system. By means of a combination of a scaling analysis and a numerical study, we investigate the elongation and director field's behavior of the tactoids as a function of their size, the strength of the electric field, the surface tension, anchoring strength, the elastic constants and the electric susceptibility anisotropy. We find that tactoids cannot elongate significantly due to an external electric field, unless the director field is bipolar or quasi bipolar and is somehow frozen in the field-free configuration. Presuming that this is the case, we find reasonable agreement with experimental data.",2103.13000v1 2021-04-29,Double-dome superconductivity under pressure in the V-based Kagome metals AV3Sb5 (A = Rb and K),"We present high-pressure electrical transport measurements on the newly discovered V-based superconductors $A$V$_3$Sb$_5$ ($A$ = Rb and K), which have an ideal Kagome lattice of vanadium. Two superconducting domes under pressure are observed in both compounds, as previously observed in their sister compound CsV$_3$Sb$_5$. For RbV$_3$Sb$_5$, the $T_c$ increases from 0.93 K at ambient pressure to the maximum of 4.15 K at 0.38 GPa in the first dome. The second superconducting dome has the highest $T_c$ of 1.57 K at 28.8 GPa. KV$_3$Sb$_5$ displays a similar double-dome phase diagram, however, its two maximum $T_c$s are lower, and the $T_c$ drops faster in the second dome than RbV$_3$Sb$_5$. An integrated temperature-pressure phase diagram of $A$V$_3$Sb$_5$ ($A$ = Cs, Rb and K) is constructed, showing that the ionic radius of the intercalated alkali-metal atoms has a significant effect. Our work demonstrates that double-dome superconductivity under pressure is a common feature of these V-based Kagome metals.",2104.14487v1 2021-05-05,Phenomenological model for the third-harmonic magnetic response of superconductors: application to Sr$_{2}$RuO$_{4}$,"We employ the phenomenological Lawrence-Doniach model to compute the contributions of the superconducting fluctuations to the third-harmonic magnetic response, denoted here by $\overline{M_{3}}$, which can be measured in a precise way using ac magnetic fields and lock-in techniques. We show that, in an intermediate temperature regime, this quantity behaves as the third-order nonlinear susceptibility, which shows a power-law dependence with the reduced temperature $\epsilon=\frac{T-T_{c}}{T_{c}}$ as $\epsilon^{-5/2}$. Very close to $T_{c}$, however, $\overline{M_{3}}$ saturates due to the nonzero amplitude of the ac field. We compare our theoretical results with experimental data for three conventional superconductors -- lead, niobium, and vanadium -- and for the unconventional superconductor Sr$_{2}$RuO$_{4}$ (SRO). We find good agreement between theory and experiment for the elemental superconductors, although the theoretical values for the critical field systematically deviate from the experimental ones. In the case of SRO, however, the phenomenological model completely fails to describe the data, as the third-harmonic response remains sizable over a much wider reduced temperature range compared to Pb, Nb, and V. We show that an inhomogeneous distribution of $T_{c}$ can partially account for this discrepancy, since regions with a locally higher $T_{c}$ contribute to the fluctuation $\overline{M_{3}}$ significantly more than regions with the ""nominal"" $T_{c}$ of the clean system. However, the exponential temperature dependence of $\overline{M_{3}}$ first reported in Ref. [3] is not captured by the model with inhomogeneity. We conclude that, while inhomogeneity is an important ingredient to understand the superconducting fluctuations of SRO and other perovskite superconductors, additional effects may be at play, such as non-Gaussian fluctuations or rare-region effects.",2105.01813v1 2021-05-13,Interlayer coupling and ultrafast hot electron transfer dynamics in metallic VSe2/graphene van der Waals heterostructures,"Atomically thin vanadium diselenide (VSe2 ) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T-phase. With the recent development of methods to manufacture high-quality monolayer VSe 2 on van der Waals materials, the outstanding properties of VSe2 -based heterostructures have been widely studied for diverse applications. Dimensional reduction and interlayer coupling with a van der Waals substrate lead to its distinguishable characteristics from its bulk counterparts. However, only a few fundamental studies have investigated the interlayer coupling effects and hot electron transfer dynamics in VSe2 heterostructures. In this work, we reveal ultrafast and efficient interlayer hot electron transfer and interlayer coupling effects in VSe2 /graphene heterostructures. Femtosecond time-resolved reflectivity measurements showed that hot electrons in VSe 2 were transferred to graphene within a 100-fs timescale with high efficiency. Besides, coherent acoustic phonon dynamics indicated interlayer coupling in VSe2 /graphene heterostructures and efficient thermal energy transfer to three-dimensional substrates. Our results provide valuable insights into the intriguing properties of metallic transition metal dichalcogenide heterostructures and motivate designing optoelectronic and photonic devices with tailored properties.",2105.06034v1 2021-05-20,Competition of superconductivity and charge density wave in selective oxidized CsV3Sb5 thin flakes,"The recently discovered layered kagome metals AV$_3$Sb$_5$ (A = K, Rb, and Cs) with vanadium kagome networks provide a novel platform to explore correlated quantum states intertwined with topological band structures. Here we report the prominent effect of hole doping on both superconductivity and charge density wave (CDW) order, achieved by selective oxidation of exfoliated thin flakes. A superconducting dome is revealed as a function of the effective doping content. The superconducting transition temperature ($T_{\mathrm{c}}$) and upper critical field in thin flakes are significantly enhanced compared with the bulk, which is accompanied by the suppression of CDW. Our detailed analyses establish the pivotal role of van Hove singularities (VHSs) in promoting correlated quantum orders in these kagome metals. Our experiment not only demonstrates the intriguing nature of superconducting and CDW orders, but also provides a novel route to tune the carrier concentration through both selective oxidation and electric gating. This establishes AV$_3$Sb$_5$ as a tunable 2D platform for the further exploration of topology and correlation among 3$d$ electrons in kagome lattices.",2105.09898v4 2021-06-03,Computational Design of Microarchitected Flow-Through Electrodes for Energy Storage,"Porous flow-through electrodes are used as the core reactive component across electrochemical technologies. Controlling the fluid flow, species transport, and reactive environment is critical to attaining high performance. However, conventional electrode materials like felts and papers provide few opportunities for precise engineering of the electrode and its microstructure. To address these limitations, architected electrodes composed of unit cells with spatially varying geometry determined via computational optimization are proposed. Resolved simulation is employed to develop a homogenized description of the constituent unit cells. These effective properties serve as inputs to a continuum model for the electrode when used in the negative half cell of a vanadium redox flow battery. Porosity distributions minimizing power loss are then determined via computational design optimization to generate architected porosity electrodes. The architected electrodes are compared to bulk, uniform porosity electrodes and found to lead to increased power efficiency across operating flow rates and currents. The design methodology is further used to generate a scaled-up electrode with comparable power efficiency to the bench-scale systems. The variable porosity architecture and computational design methodology presented here thus offers a novel pathway for automatically generating spatially engineered electrode structures with improved power performance.",2106.01512v1 2021-07-23,No observation of chiral flux current in the topological kagome metal CsV$_{3}$Sb$_{5}$,"Compounds with kagome lattice usually host many exotic quantum states, including the quantum spin liquid, non-trivial topological Dirac bands and a strongly renormalized flat band, etc. Recently an interesting vanadium based kagome family $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, or Cs) was discovered, and these materials exhibit multiple interesting properties, including unconventional saddle-point driving charge density wave (CDW) state, superconductivity, etc. Furthermore, some experiments show anomalous Hall effect which inspires that there might be some chiral flux current states. Here we report scanning tunneling measurements by using spin-polarized tips. Although we have observed clearly the $2a_0\times2a_0$ CDW and $4a_0$ stripe orders, the well-designed experiments with refined spin-polarized tips do not reveal any trace of the chiral flux current phase in CsV$_3$Sb$_5$ within the limits of experimental accuracy. No observation of the local magnetic moment in our experiments may put an upper bound constraint on the magnitude of magnetic moments induced by the possible chiral loop current which has a time-reversal symmetry breaking along $c$-axis in CsV$_{3}$Sb$_{5}$.",2107.11326v2 2021-08-10,Toward nonthermal control of excited quantum materials: framework and investigations by ultrafast electron scattering and imaging,"Quantum material systems upon applying ultrashort laser pulses provide a rich platform to access excited material phases and their transformations that are not entirely like their equilibrium counterparts. The addressability and potential controls of metastable or long-trapped out-of-equilibrium phases have motivated interests both for the purposes of understanding the nonequilibrium physics and advancing the quantum technologies. Thus far, the dynamical spectroscopic probes eminently focus on microscopic electronic and phonon responses. For characterizing the long-range dynamics, such as order parameter fields and fluctuation effects, the ultrafast scattering probes offer direct sensitivity. Bridging the connections between the microscopic dynamics and macroscopic responses is central toward establishing the nonequilibrium physics behind the light-induced phases. Here, we present a path toward such understanding by cross-examining the structure factors associated with different dynamical states obtained from ultrafast electrons scattering, imaging, and modeling. We give the basic theoretical framework on describing the non-equilibrium scattering problems and briefly describe how such framework relates to the out-of-equilibrium phenomena. We give effective models outlining the emergences of nonthermal critical points, hidden phases, and non-equilibrium relaxational responses from vacuum-suspended rare-earth tritellurides, tantalum disulfides thin films, and vanadium dioxide nanocrystalline materials upon light excitations.",2108.04860v1 2021-08-21,Evolution of superconductivity and charge order in pressurized RbV$_3$Sb$_5$,"The kagome metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) under ambient pressure exhibit an unusual charge order, from which superconductivity emerges. In this work, by applying hydrostatic pressure using a liquid pressure medium and carrying out electrical resistance measurements for RbV$_3$Sb$_5$, we find the charge order becomes suppressed under a modest pressure $p_{\rm c}$ ($1.4$ = 0.09) in contrast to Galactic stars that show [$\alpha$/Fe] in the range 0.2 to 0.3 dex. In J045, Sc and Ti are under abundant with [X/Fe] $\le$ $-$0.25. Vanadium gives [V/Fe] = 0.51 and zinc is under-abundant with [Zn/Fe] = $-$0.62. The object exhibits near-solar abundances for Sr, Y, Ba, Pr, and Sm. The La is marginally enhanced, and Ce and Nd are marginally under-abundant in J045. With [Ba/Eu] = $-$0.38, the object falls into the category of neutron-capture rich r-I stars. The estimated abundances of various elements show that the observed abundance pattern is not compatible with the abundances characteristic of Galactic metal-poor stars but matches quite closely with the abundance pattern of Sculptor Dwarf galaxy stars of similar metallicity. Based on the above observational evidences, we suggest that the object is a possible Sculptor Dwarf Galaxy escapee.",2204.12099v1 2022-05-09,Charge density wave in kagome lattice intermetallic ScV6Sn6,"Materials hosting kagome lattices have drawn interest for the diverse magnetic and electronic states generated by geometric frustration. In the $A$V$_3$Sb$_5$ compounds ($A$ = K, Rb, Cs), stacked vanadium kagome layers give rise to unusual charge density waves (CDW) and superconductivity. Here we report single-crystal growth and characterization of ScV$_6$Sn$_6$, a hexagonal HfFe$_6$Ge$_6$-type compound that shares this structural motif. We identify a first-order phase transition at 92 K. Single crystal X-ray and neutron diffraction reveal a charge density wave modulation of the atomic lattice below this temperature. This is a distinctly different structural mode than that observed in the $A$V$_3$Sb$_5$ compounds, but both modes have been anticipated in kagome metals. The diverse HfFe$_6$Ge$_6$ family offers more opportunities to tune ScV$_6$Sn$_6$ and explore density wave order in kagome lattice materials.",2205.04582v2 2022-05-12,"Investigation of lattice dynamics, magnetism and electronic transport in $β$-Na$_{0.33}$V$_2$O$_{5}$","We investigate the electronic and magnetic properties as well as lattice dynamics and spin-phonon coupling of $\beta$-Na$_{0.33}$V$_2$O$_5$ using temperature-dependent Raman scattering, dc-magnetization and dc-resistivity, x-ray photoemission, and absorption spectroscopy. The Rietveld refinement of XRD pattern with space group C2/m confirms the monoclinic structure. The analysis of temperature-dependent Raman spectra in a temperature range of 13--673~K reveals an anharmonic dependence of the phonon frequency and full width at half maximum, which is accredited to the symmetric phonon decay. However, below about 40 K, the hardening of the phonon frequency beyond anharmonicity is attributed to the spin-phonon coupling. Interestingly, the estimated effective magnetic moment $\mu_{\rm eff}=$ 0.63~$\mu_B$ from the magnetization data manifests a mixed-valence state of V ions in 4+ (18$\pm$1\%) and 5+ (82$\pm$1\%). A similar ratio of V$^{4+}$ to V$^{5+}$ is also observed in the x-ray photoemission and x-ray absorption near-edge spectra and that is found to be consistent with the sample stoichiometry. In addition, the V$^{4+}$ ions are distributed between different vanadium (V1 and V3) sites. The analysis of extended x-ray absorption fine structure at different V-sites gives the corresponding V--O bond lengths, which are utilized in the assignment of Raman modes. Moreover, the temperature-dependent resistivity resembles a semiconducting behavior where the charge carrier transport is facilitated by the band conduction at higher temperatures and via hopping $\le$260~K.",2205.06019v2 2022-05-19,Ubiquitous Superconducting Diode Effect in Superconductor Thin Films,"The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.",2205.09276v5 2022-06-08,Macroscopic Quantum Tunneling of a Topological Ferromagnet,"The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies on a (V,Bi,Sb)2Te3 ferromagnetic topological insulator nanostructure in the quantum anomalous Hall regime. This allows us access to the dynamics of an individual ferromagnetic domain. The volume of the domain is estimated to be about 85 000 nm3, containing some 50 000 vanadium atoms, spread over a macroscopic distance of 115 nm. Telegraph noise resulting from the magnetization fluctuations of this domain is observed in the Hall signal. Careful analysis of the influence of temperature and external magnetic field on the domain switching statistics provides evidence for quantum tunneling of magnetization[15-22] in a macrospin state. This ferromagnetic macrospin is not only the largest magnetic object in which quantum tunneling has been observed, but also the first observation of the effect in a topological state of matter.",2206.03972v1 2022-08-29,Superconductivity from repulsive interactions on the kagome lattice,"The discovery of superconductivity in layered vanadium-based kagome metals $A$V$_3$Sb$_5$ ($A$: K, Rb, Cs) has added a new family of materials to the growing class of possible unconventional superconductors. However, the nature of the superconducting pairing in these materials remains elusive. We present a microscopic theoretical study of the leading superconducting instabilities on the kagome lattice based on spin- and charge-fluctuation mediated Cooper pairing. The applied methodology includes effects of both on-site and nearest-neighbor repulsive Coulomb interactions. Near the upper van Hove filling -- relevant for the $A$V$_3$Sb$_5$ materials -- we find a rich phase diagram with several pairing symmetries being nearly degenerate. In particular, while a substantial fraction of the phase diagram is occupied by a spin-singlet order parameter transforming as a two-dimensional irreducible representation of the point group, several nodal spin-triplet pairing states remain competitive. We compute the band and interaction parameter-dependence of the hierarchy of the leading superconducting instabilities, and determine the detailed momentum dependence of the resulting preferred gap structures. Crucially, for moderate values of the interaction parameters, the individual pairing states depend strongly on momentum and exhibit multiple nodes on the Fermi surface. We discuss the properties of these superconducting gap structures in light of recent experimental developments of the $A$V$_3$Sb$_5$ materials.",2208.13521v1 2022-09-20,Characteristics of a Titanium Manganese redox flow battery based on Comsol,"A simulation model and design of Titanium Manganese Redox Flow Battery (TMRFB) is proposed to study the distribution of dissociation rate, overpotential, current density, and electrode potential. TMRFB is one of the most promising new energy storages because of its high capacity and eco-friendly characteristics in the current condition of energy scarcity and environmental pollution. Moreover, Mn-based flow batteries are gaining popularity due to their inexpensive cost and high energy density in lieu of all vanadium redox flow batteries which are expensive. This research shows that the surface dissociation rate of Ti4+/ Ti3+ and Mn3+/Mn2+ ions are higher at the membrane and lower at the inlet where the velocity of the electrolyte flow is higher; Furthermore, our work reveals that when the thickness of the electrode is compressed from 4.5 mm to 3 mm, overpotential reduces whereas current density and electrode potential increases. The COMSOL Multiphysics software is used to solve the model's equations using the finite element approach. From the dissociation rate it is concluded that less potential is required at the membrane for the oxidation reduction reaction and with optimized electrolyte flow rate battery performance can be improved. Thus, electrode compression increases conductivity and battery performance.",2209.09904v1 2022-10-12,Microscopic nature of the charge-density wave in kagome superconductor RbV$_3$Sb$_5$,"The recently discovered vanadium-based kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) offer the possibility to study the interplay between competing electronic orderings, such as charge density order and superconductivity. We focus on the former and provide a comprehensive set of $^{51}$V, $^{87}$Rb, and $^{121}$Sb magnetic resonance measurements on an RbV$_3$Sb$_5$ single crystal. Elucidating the symmetries and properties of the CDW phase is essential to understanding the unconventional electronic orderings occurring in this material. We establish the structure of the $2\times 2 \times 2$ superlattice that describes the system below the charge density wave transition by combining both experimental and computational methods, with a methodology that can be readily applied to the remaining compounds of the same family. Our results give compelling evidence that the CDW structure occurring below 103 K for RbV$_3$Sb$_5$ is the so-called Inverse Start of David pattern $\pi$-shifted along the c axis (also known as staggered tri-hexagonal).",2210.06523v1 2022-10-26,Chemical tuning of a honeycomb magnet through a critical point,"BaCo2(AsO4)2 (BCAO) has seen extensive study since its initial identification as a proximate Kitaev quantum spin liquid candidate. Thought to be described by the highly anisotropic XXZ-J_1-J_3 model, the ease with which magnetic order is suppressed in the system indicates proximity to a spin liquid phase. Upon chemical tuning via partial arsenic substitution with vanadium, we show an initial suppression of long-range incommensurate order in the BCAO system to T = 3.0 K, followed by increased spin freezing at higher substitution levels. Between these two regions, at around 10% substitution, the system is shown to pass through a critical point where the competing J_1/J_3 exchange interactions become more balanced, producing a more complex magnetic ground state, likely stabilized by quantum fluctuations. This state shows how slight compositional change in magnetically-frustrated systems may be leveraged to tune ground state degeneracies and potentially realize a quantum spin liquid state.",2210.14439v2 2022-11-03,Mechanochemical synthesis of pseudobinary Ti-V hydrides and their conversion reaction with Li and Na,"Lithium-ion batteries (LiBs) based on insertion electrodes reach intrinsic capacity limits. Performance improvements and cost reduction require alternative reaction mechanisms and novel battery chemistries such as conversion reactions and sodium-ion batteries (NaBs), respectively. We here study the formation of Ti1-xVxH2 hydrides (0 < x < 1) and their electrochemical properties as anodes in LiBs and NaBs half-cells. Hydrides were synthesized by mechanochemistry of the metal powders under hydrogen atmosphere (PH2~ 8 MPa). For V contents below 80 at.% (x < 0.8), single-phase pseudobinary dihydride compounds Ti1-xVxH2 are formed. They crystallize in the fluorite-type structure and are highly nanostructured (crystallite size < 10 nm). Their lattice parameter decreases linearly with the V content leading to hydride destabilization. Electrochemical studies were first carried out in Li-ion half cells with full conversion between Ti1-xVxH2 hydrides and lithium. The potential of the conversion reaction can be gradually tuned with the vanadium content due to its destabilization effect. Furthermore, different paths for the conversion reaction are observed for Ti-rich (x < 0.25) and V-rich (x > 0.7) alloys. Na-ion half-cell measurements prove the reactivity between (V,Ti)H2 hydrides and sodium, albeit with significant kinetic limitations",2211.01550v1 2022-11-07,Optical spectroscopy and band structure calculations of structural phase transition in the Vanadium-based kagome metal ScV$_6$Sn$_6$,"In condensed matter physics, materials with kagome lattice display a range of exotic quantum states, including charge density wave (CDW), superconductivity and magnetism. Recently, the intermetallic kagome metal ScV6Sn6 was discovered to undergo a first-order structural phase transition with the formation of a root3xroot3x3 CDW at around 92 K. The bulk electronic band properties are crucial to understanding the origin of the structural phase transition. Here, we conducted an optical spectroscopy study in combination with band structure calculations across the structural transition. Our findings showed abrupt changes in the optical reflectivity/conductivity spectra as a result of the structural transition, without any observable gap formation behavior. The optical measurements and band calculations actually reveal a sudden change of the band structure after transition. It is important to note that this phase transition is of the first-order type, which distinguishes it from conventional density-wave type condensations. Our results provide an insight into the origin of the structural phase transition in this new and unique kagome lattice.",2211.03412v2 2022-11-29,Electronic nematicity without charge density waves in titanium-based kagome metal,"Layered crystalline materials that consist of transition metal atoms on a kagome network have emerged as a versatile platform to study unusual electronic phenomena. For example, in the vanadium-based kagome superconductors AV3Sb5 (where A can stand for K, Cs, or Rb) there is a parent charge density wave phase that appears to simultaneously break both the translational and the rotational symmetry of the lattice. Here, we show a contrasting situation where electronic nematic order - the breaking of rotational symmetry without the breaking of translational symmetry - can occur without a corresponding charge density wave. We use spectroscopic-imaging scanning tunneling microscopy to study the kagome metal CsTi3Bi5 that is isostructural to AV3Sb5 but with a titanium atom kagome network. CsTi3Bi5 does not exhibit any detectable charge density wave state, but comparison to density functional theory calculations reveals substantial electronic correlation effects at low energies. Comparing the amplitudes of scattering wave vectors along different directions, we discover an electronic anisotropy that breaks the six-fold symmetry of the lattice, arising from both in-plane and out-of-plane titanium-derived d orbitals. Our work uncovers the role of electronic orbitals in CsTi3Bi5, suggestive of a hexagonal analogue of the nematic bond order in Fe-based superconductors.",2211.16477v2 2022-12-21,Universal scaling of tunable Yu-Shiba-Rusinov states across the quantum phase transition,"Quantum magnetic impurities give rise to a wealth of phenomena attracting tremendous research interest in recent years. On a normal metal, magnetic impurities generate the correlation-driven Kondo effect. On a superconductor, bound states emerge inside the superconducting gap called the Yu-Shiba-Rusinov (YSR) states. Theoretically, quantum impurity problems have been successfully tackled by numerical renormalization group (NRG) theory, where the Kondo and YSR physics are shown to be unified and the normalized YSR energy scales universally with the Kondo temperature divided by the superconducting gap. However, experimentally the Kondo temperature is usually extracted from phenomenological approaches, which gives rise to significant uncertainties and cannot account for magnetic fields properly. Using scanning tunneling microscopy at 10mK, we apply a magnetic field to several YSR impurities on a vanadium tip to reveal the Kondo effect and employ the microscopic single impurity Anderson model with NRG to fit the Kondo spectra in magnetic fields accurately and extract the corresponding Kondo temperature unambiguously. Some YSR states move across the quantum phase transition (QPT) due to the changes in atomic forces during tip approach, yielding a continuous universal scaling with quantitative precision for quantum spin-1/2 impurities.",2212.11332v1 2023-01-17,"Enhancement of photocatalytic performance of V2O5 by rare-earth ions doping, synthesized by facile hydrothermal technique","The rare-earth (RE) elements [Holmium (Ho) and Ytterbium (Yb)] doped vanadium pentoxide (V2O5) with a series of doping concentrations (1 mol.%, 3 mol.%, and 5 mol.%) have been successfully synthesized using environment-friendly facile hydrothermal method. The effect of RE ions on the photocatalytic efficiency of doped V2O5 has also been analyzed. The stable orthorhombic crystal structure of doped V2O5 confirms by the X-ray diffraction with no secondary phase, and high-stressed conditions are generated for the 3 mol.%. The crystallite size, strain, and dislocation density are calculated to perceive the doping effect on the bare V2O5. The optical characteristics have been measured using UV-vis spectroscopy. The absorptions are found to be increased with increasing doping concentrations; however, the bandgap remains in the visible range. The photocatalytic properties are examined for the compounds with varying pH, and it is observed that higher efficiency is exhibited for the pH 7 and catalyst concentration 500 ppm. The highest degradation efficiency is found to be 93% and 95% for the 3 mol.% of Ho and Yb-doped V2O5 samples within 2 hours, respectively. It is elucidated that the RE ions significantly impact the catalytic behavior of V2O5, and the mechanism behind these extraordinary efficiencies has been explained thoroughly.",2301.06666v1 2023-01-31,Hybrid Cathode Lithium Battery Discharge Simulation for Implantable Cardioverter Defibrillators Using a Coupled Electro-Thermal Dynamic Model,"This paper investigates the impact of implantable cardioverter defibrillator (ICD)'s load on its lithium battery power sources through a coupled electro-thermal dynamic model simulation. ICDs are one of the effective treatments available to significantly improve survival of patients with fatal arrhythmia (abnormal heart rhythm) disorders. Using a lithium battery power source, this life-saving device sends electrical shocks or pulses to regulate the heartbeat. The service life and reliability of an ICD is primarily expressed by its battery's lifespan and performance. In this paper we investigate the terminal voltage, depth of discharge (DOD) and temperature dynamics of the implantable lithium battery with a combined cathode material, namely carbon-monofluoride and silver vanadium oxide (Li/CFx-SVO). Modeling the implantable batteries characteristics is a well-established topic in literature; however, to the best of the author's knowledge, the impact of the high-energy shocks (defibrillation) and low-energy device power supply (housekeeping) on the ICD's battery operation is relatively less-explored. Our analysis reveals that the battery terminal voltage is primarily affected by small but continuous housekeeping discharge current in the range of uA, rather than intermittent high defibrillation current demand in the range of several amps. The results can be used to improve the device design control and operation, thus extending the service life in patients and reducing the need for invasive replacement surgery.",2302.00069v1 2023-02-13,"Two elementary band representation model, Fermi surface nesting, and surface topological superconductivity in $A$V$_{3}$Sb$_ {5}$ ($A = \text{K, Rb, Cs}$)","The recently discovered vanadium-based Kagome metals $A$V$_{3}$Sb$_{5}$ ($A = \text{K, Rb, Cs}$) are of great interest with the interplay of charge density wave (CDW) order, band topology and superconductivity. In this paper, by identifying elementary band representations (EBRs), we construct a two-EBR graphene-Kagome model to capture the two low-energy van-Hove-singularity dispersions and, more importantly, the nontrivial band topology in these Kagome metals. This model consists of $A_g@3g$ (V-$d_{x^2-y^2/z^2}$, Kagome sites) and $A_2''@2d$ EBRs (Sb1-$p_z$, honeycomb sites). We have investigated the Fermi surface instability by calculating the electronic susceptibility $\chi(\mathbf{q})$. Prominent Fermi-surface nesting peaks are obtained at three L points, where the $z$ component of the nesting vector shows intimate relationship with the anticrossing point along M--L. The nesting peaks at L are consistent with the $2\times 2\times 2$ CDW reconstruction in these compounds. In addition, the sublattice-resolved bare susceptibility is calculated and similar sharp peaks are observed at the L points, indicating a strong antiferromagnetic fluctuation. Assuming a bulk $s$-wave superconducting pairing, helical surface states and nontrivial superconducting gap are obtained on the (001) surface. In analogous to FeTe$_{1-x}$Se$_{x}$ superconductor, our results establish another material realization of a stoichiometric superconductor with nontrivial band topology, providing a promising platform for studying exotic Majorana physics in condensed matter",2302.06211v2 2023-03-01,Anisotropic magnetism and electronic properties of the kagome metal SmV6Sn6,"Kagome magnets are expected to feature emergent properties due to the interplays among geometry, magnetism, electronic correlation, and band topology. The magnetism and topological electronic states can be tuned via the rare earth engineering in RV6Sn6 kagome metals, where R is a rare earth element. Herein, we present the synthesis and characterization of SmV6Sn6, a metal with two-dimensional kagome nets of vanadium and frustrated triangular Sm lattice. Partial of the Sm atoms are shifted from the normal R positions by c/2 along the c axis. Magnetic measurements reveal obvious anisotropy, where the easy magnetic axis is within the ab plane. Electronic transports show multiband behaviors below 200 K. Density functional theory calculations find that the electronic structure of SmV6Sn6 hosts flat bands, Dirac cone, and saddle point arising from the V-3d electrons near the Fermi level. No evidence for the existence of charge density wave or magnetic order down to 2 K can be observed. Thus, SmV6Sn6 can be viewed as a modest disordered derivative of the RV6Sn6 structure, in which the disordered rare earth ions can suppress the magnetic order and charge density wave in the RV6Sn6 kagome family.",2303.00627v1 2023-03-20,Violation of Emergent Rotational Symmetry in the Hexagonal Kagome Superconductor CsV3Sb5,"Superconductivity is caused by electron pairs that are canonically isotropic, whereas some exotic superconductors are known to exhibit non-trivial anisotropy stemming from unconventional pairings. However, superconductors with hexagonal symmetry, the highest rotational symmetry allowed in crystals, exceptionally have strong constraint that is called emergent rotational symmetry (ERS): anisotropic properties should be very weak especially near the critical temperature Tc even for unconventional pairings such as d-wave states. Here, we investigate superconducting anisotropy of the recently-found hexagonal Kagome superconductor CsV3Sb5, which is known to exhibit various intriguing phenomena originating from its undistorted Kagome lattice formed by vanadium atoms. Based on calorimetry performed under accurate two-axis field-direction control, we discover a combination of six- and two-fold anisotropies in the in-plane upper critical field. Both anisotropies, robust up to very close to Tc, are beyond predictions of standard theories. We infer that this clear ERS violation with nematicity is best explained by multi-component nematic superconducting order parameter in CsV3Sb5 intertwined with symmetry breakings caused by the underlying charge-density-wave order.",2303.11072v1 2023-03-22,Open-tunneled oxides as intercalation host for multivalent ion (Ca and Al) batteries: A DFT study,"Lithium-ion batteries (LIBs) are ubiquitous in everyday applications. However, Lithium (Li) is a limited resource on the planet and is therefore not sustainable. As an alternative to lithium, earth-abundant and cheaper multivalent metals such as aluminum (Al) and calcium (Ca) have been actively researched in battery systems. However, finding suitable intercalation hosts for multivalent-ion batteries is urgently needed. Open-tunneled oxides are a particular category of microparticles distinguished by the presence of integrated one-dimensional channels or nanopores. This work focuses on two promising open-tunnel oxides, viz: Niobium Tungsten Oxide (NTO) and Molybdenum Vanadium Oxide (MoVO). We find that the MoVO structure can adsorb greater numbers of multivalent ions than NTO due to its larger surface area and different shapes. The MoVO structure can adsorb Ca, Li, and Al ions with adsorption potential at around 4 to 5 eV. However, the adsorption potential for hexagonal channels of Al ion drops to 1.73 eV because of less channel area. NTO structure has an insertion/adsorption potential of 4.4 eV, 3.4 eV, and 0.9 eV for one Li, Ca, and Al, respectively. In general, Ca ion is more adsorbable than Al ion in both MoVO and NTO structures. Bader charge analysis and charge density plot reveals the role of charge transfer and ion size on the insertion of multivalent ions such as Ca and Al into MoVO and NTO systems. Our results provide general guidelines to explore other multivalent ions for battery applications.",2303.12301v1 2023-05-09,Anisotropic hybridization probed by polarization dependent x-ray absorption spectroscopy in VI3 van der Waals Mott ferromagnet,"Polarization dependent x-ray absorption spectroscopy was used to study the magnetic ground state and the orbital occupation in bulk-phase VI$_3$ van der Waals crystals below and above the ferromagnetic and structural transitions. X-ray natural linear dichroism and X-ray magnetic circular dichroism spectra acquired at the V $L_{2,3}$ edges are compared against multiplet cluster calculations within the frame of the ligand field theory to quantify the intra-atomic electronic interactions at play and evaluate the effects of symmetry reduction occurring in a trigonally distorted VI$_6$ unit. We observed a non zero linear dichroism proving the presence of an anisotropic charge density distribution around the V$^{3+}$ ion due to the unbalanced hybridization between the Vanadium and the ligand states. Such hybridization acts as an effective trigonal crystal field, slightly lifting the degeneracy of the $t_{2g}^2$ ground state. However, the energy splitting associated to the distortion underestimates the experimental band gap, suggesting that the insulating ground state is stabilized by Mott correlation effects rather than via a Jahn-Teller mechanism. Our results clarify the role of the distortion in VI$_3$ and establish a benchmark for the study of the spectroscopic properties of other van der Waals halides, including emerging 2D materials with mono and few-layers thickness, whose fundamental properties might be altered by reduced dimensions and interface proximity.",2305.05360v1 2023-05-24,Hybrid-MPET: an open-source simulation software for hybrid electrode batteries,"As the design of single-component battery electrodes has matured, the battery industry has turned to hybrid electrodes with blends of two or more active materials to enhance battery performance. Leveraging the best properties of each material while mitigating their drawbacks, multi-component hybrid electrodes open a vast new design space that could be most efficiently explored through simulations. In this article, we introduce a mathematical modeling framework and open-source battery simulation software package for Hybrid Multiphase Porous Electrode Theory (Hybrid-MPET), capable of accounting for the parallel reactions, phase transformations and multiscale heterogeneities in hybrid porous electrodes. Hybrid-MPET models can simulate both solid solution and multiphase active materials in hybrid electrodes at intra-particle and inter-particle scales. Its modular design also allows the combination of different active materials at any capacity fraction. To illustrate the novel features of Hybrid-MPET, we present experimentally validated models of silicon-graphite (Si-Gr) anodes used in electric vehicle batteries and carbon monofluoride (CFx) - silver vanadium oxide (SVO) cathodes used in implantable medical device batteries. The results demonstrate the potential of Hybrid-MPET models to accelerate the development of hybrid electrode batteries by providing fast predictions of their performance over a wide range of design parameters and operating protocols.",2305.15599v1 2023-06-14,The unexpected optical and ultraviolet variability of the standard star $α$ Sex (HD 87887),"The analysis of the available TESS light curves of $\alpha$ Sex (HD 87887) reveals low-frequency pulsations with a period of about 9.1 hours in this spectroscopic A0 III standard star. The IUE observations in December 1992 reveal large flux variations both in the far UV and in the mid UV which are accompanied by variations of the brightness in the V band recorded by the Fine Error Sensor on board IUE. The ultraviolet variability could be due to an eclipse by an hitherto undetected companion of smaller radius, possibly 2.5 R$_{\odot}$ but this needs confirmation by further monitoring possibly with TESS. An abundance determination yields solar abundances for most elements. Only carbon and strontium are underabundant and titanium, vanadium and barium mildly overabundant. Identification is provided for most of the lines absorbing more than 2% in the optical spectrum of $\alpha$ Sex. Stellar evolution modeling shows that $\alpha$ Sex is near the terminal-age main sequence, and its mass, radius and age are estimated to be $M = 2.57 \pm 0.32$ M$_{\odot}$, $R = 3.07 \pm 0.90$ R$_{\odot}$, $A = 385 \pm 77$ Myr, respectively.",2306.08551v1 2023-06-23,Semi-Empirical Haken-Strobl Model for Molecular Spin Qubits,"Understanding the physical processes that determine the relaxation $T_{1}$ and dephasing $T_2$ times of molecular spin qubits is critical for envisioned applications in quantum metrology and information processing. Recent spin-echo $T_1$ measurements of solid-state molecular spin qubits have stimulated the development of quantum mechanical models for predicting intrinsic spin qubit timescales using first-principles electronic structure methods. We develop an alternative semi-empirical approach to construct Redfield quantum master equations for molecular spin qubits using a stochastic Haken-Strobl model for a central spin with a fluctuating gyromagnetic tensor due to spin-lattice interaction and a fluctuating local magnetic field due to interactions with other lattice spins. Using a vanadium-based spin qubit as a case study, we compute qubit population and decoherence timescales as a function of temperature and magnetic field using a bath spectral density parametrized with a small number of $T_{1}$ measurements. The theory quantitatively agrees with experimental data over a range of conditions beyond those used to parametrize the model, demonstrating the generalization potential of the method. The ability of the model to describe the temperature dependence of the ratio $T_2/T_1$ is discussed and possible applications for designing novel molecule-based quantum magnetometers are suggested.",2306.13790v1 2023-07-31,Spin decoherence in VOPc@graphene nanoribbon complexes,"Carbon nanoribbon or nanographene qubit arrays can facilitate quantum-to-quantum transduction between light, charge, and spin, making them an excellent testbed for fundamental science in quantum coherent systems and for the construction of higher-level qubit circuits. In this work, we study spin decoherence due to coupling with a surrounding nuclear spin bath of an electronic molecular spin of a vanadyl phthalocyanine (VOPc) molecule integrated on an armchair-edged graphene nanoribbon (GNR). Density functional theory (DFT) is used to obtain ground state atomic configurations. Decay of spin coherence in Hahn echo experiments is then simulated using the cluster correlation expansion method with a spin Hamiltonian involving hyperfine and electric field gradient tensors calculated from DFT. We find that the decoherence time $T_2$ is anisotropic with respect to magnetic field orientation and determined only by the hydrogen nuclear spins both on VOPc and GNR. Large electron spin echo envelope modulation (ESEEM) due to nitrogen and vanadium nuclear spins is present at specific field ranges and can be completely suppressed by tuning the magnetic field. The relation between these field ranges and the hyperfine interactions is analyzed. The effects of interactions with the nuclear quadrupole moments are also studied, validating the applicability and limitations of the spin Hamiltonian when they are disregarded.",2307.16403v1 2023-08-13,On the relative abundances of Cavansite and Pentagonite,"Cavansite is a visually stunning blue vanadosilicate mineral with limited occurrences worldwide, whereas Pentagonite is a closely related dimorph with similar physical and chemical properties, yet is extremely rare compared to Cavansite. The reasons behind Pentagonite's exceptional rarity remain largely unknown. In this study, (a) density functional theory (DFT) is utilized to investigate the electronic structures of Cavansite and Pentagonite at ground state and finite pressures; (b) a two-state Boltzmann probability model is then employed to construct a comprehensive phase diagram that reveals the abundance of each species across a wide range of pressure and temperature conditions; and (c) dehydration characteristics of these two minerals are explored. The present analysis reveals the key factors that contribute to the relative scarcity of Pentagonite, including differences in structural arrangement and electronic configurations between the two minerals. Specifically, it shows that (a) because of the peculiar arrangements of SiO4 polyhedra, Cavansite forms a compact structure (about 2.7% less in volume) resulting in lower energy; (b) at a temperature of about 650K only about 1% Pentagonite can form; (c) vanadium induces a highly localized state in both of these otherwise large-band-gap insulators resulting in an extremely weak magnetic phase that is unlikely to be observed at any reasonable finite temperature; and (d) water molecules are loosely bound inside the microporous crystals of Cavansite and Pentagonite, suggesting potential applications of these minerals in various technological fields.",2308.06825v2 2023-09-03,Observation of multiple flat bands and topological Dirac states in a new titanium based slightly distorted kagome metal YbTi3Bi4,"Kagome lattices have emerged as an ideal platform for exploring various exotic quantum phenomena such as correlated topological phases, frustrated lattice geometry, unconventional charge density wave orders, Chern quantum phases, superconductivity, etc. In particular, the vanadium based nonmagnetic kagome metals AV3Sb5 (A= K, Rb, and Cs) have seen a flurry of research interest due to the discovery of multiple competing orders. Here, we report the discovery of a new Ti based kagome metal YbTi3Bi4 and employ angle-resolved photoemission spectroscopy (ARPES), magnetotransport in combination with density functional theory calculations to investigate its electronic structure. We reveal spectroscopic evidence of multiple flat bands arising from the kagome lattice of Ti with predominant Ti 3d character. Through our calculations of the Z2 indices, we have identified that the system exhibits topological nontriviality with surface Dirac cones at the Gamma point and a quasi two-dimensional Dirac state at the K point which is further confirmed by our ARPES measured band dispersion. These results establish YbTi3Bi4 as a novel platform for exploring the intersection of nontrivial topology, and electron correlation effects in this newly discovered Ti based kagome lattice.",2309.01176v1 2023-09-26,Intelligent radiative thermostat induced by near-field radiative thermal diode,"A radiative thermostat system senses its own temperature and automatically modulates heat transfer by turning on/off the cooling to maintain its temperature near a desired set point. Taking advantage of far- and near-field radiative thermal technologies, we propose an intelligent radiative thermostat induced by the combination of passive radiative cooling and near-field radiative thermal diode for thermal regulation at room temperature. The top passive radiative cooler in thermostat system with static thermal emissivity uses the cold outer space to passively cool itself all day, which can provide the bottom structure with the sub-ambient cold source. Meanwhile, using the phase-transition material vanadium dioxide, the bottom structure forms a near-field radiative thermal diode with the top cooler, which can significantly regulate the heat transfer between two terminals of the diode and then realize a stable temperature of the bottom structure. Besides, the backsided heat input of the thermostat has been taken into account according to real-world applications. Thermal performance of the proposed radiative thermostat design has been analyzed, showing that the coupling effect of static passive radiative cooling and dynamic internal heat transfer modulation can maintain an equilibrium temperature approximately locked within the phase transition region. Besides, after considering empirical indoor-to-outdoor heat flux, rendering its thermal performance closer to that of passive solar residential building walls, the calculation result proves that the radiative thermostat system can effectively modulate the temperature and stabilize it within a controllable range. Passive radiative thermostats driven by near-field radiative thermal diode can potentially enable intelligent temperature regulation technologies, for example, to moderate diurnal temperature in regions with extreme thermal swings.",2309.15303v1 2023-10-01,Electronic properties of kagome metal ScV6Sn6 using high field torque magnetometry,"This work presents electronic properties of the kagome metal ScV6Sn6 using de Haas-van Alphen (dHvA) oscillations and density functional theory (DFT) calculations. The torque signal with the applied fields up to 43 T shows clear dHvA oscillations with six major frequencies, five of them are below 400 T (low frequencies) and one is nearly 2800 T (high frequency). The Berry phase calculated using the Landau level fan diagram near the quantum limit is approximately {\pi}, which suggests the non-trivial band topology in ScV6Sn6. To explain the experimental data, we computed the electronic band structure and Fermi surface using DFT in both the pristine and charge density wave (CDW) phases. Our results confirm that the CDW phase is energetically favorable, and the Fermi surface undergoes a severe reconstruction in the CDW state. Furthermore, the angular dependence of the dHvA frequencies are consistent with the DFT calculations. The detailed electronic properties presented here are invaluable for understanding the electronic structure and CDWorder in ScV6Sn6, as well as in other vanadium-based kagome systems.",2310.00751v1 2023-10-10,Stochastic 3D modeling of nanostructured NVP/C active material particles for sodium-ion batteries,"A data-driven modeling approach is presented to quantify the influence of morphology on effective properties in nanostructured sodium vanadium phosphate $\mathrm{Na}_3\mathrm{V}_2(\mathrm{PO}_4)_3$/ carbon composites (NVP/C), which are used as cathode material in sodium-ion batteries. This approach is based on the combination of advanced imaging techniques, experimental nanostructure characterization and stochastic modeling of the 3D nanostructure consisting of NVP, carbon and pores. By 3D imaging and subsequent post-processing involving image segmentation, the spatial distribution of NVP is resolved in 3D, and the spatial distribution of carbon and pores is resolved in 2D. Based on this information, a parametric stochastic model, specifically a Pluri-Gaussian model, is calibrated to the 3D morphology of the nanostructured NVP/C particles. Model validation is performed by comparing the nanostructure of simulated NVP/C composites with image data in terms of morphological descriptors which have not been used for model calibration. Finally, the stochastic model is used for predictive simulation to quantify the effect of varying the amount of carbon while keeping the amount of NVP constant. The presented methodology opens new possibilities for a ressource-efficient optimization of the morphology of NVP/C particles by modeling and simulation.",2310.07017v1 2023-10-14,"Chiral magnetism, lattice dynamics, and anomalous Hall conductivity in the novel V$_3$AuN antiferromagnetic antiperovskite","Antiferromagnetic antiperovskites, where magnetically active 3$d$ metal cations are placed in the octahedral corners of a perovskite structure, are in the spotlight due to their intertwined magnetic structure and topological properties. Especially their anomalous Hall conductivity, which can be controlled by applied strain and/or electric field, makes them highly attractive in different electronic applications. Here, we present the study and theoretical understanding of a new antiperovskite compound that can offer enormous opportunities in a broad set of applications. Using first-principles calculations, we investigated the structure, lattice dynamics, noncollinear magnetic ordering, and electronic behavior in the Vanadium-based antiperovskite V$_3$AuN. We found an antiperovskite structure centered on N similar to the Mn$_3A$N family as the structural ground state. In such a phase, a \emph{Pm$\bar{3}$m} ground state was found in contrast to the \emph{Cmcm} post-antiperovskite layered structure, as in the V$_3A$N, $A$ = Ga, Ge, As, and P. We studied the lattice dynamics and electronic properties, demonstrating its vibrational stability in the cubic structure and a chiral antiferromagnetic noncollinear ordering as a magnetic ground state. Finally, we found that the anomalous Hall conductivity, associated with the topological features induced by the magnetic symmetry, is $\sigma_{xy}$ = $-$291 S$\cdot$cm$^{-1}$ ($\sigma_{111}$ = $-$504 S$\cdot$cm$^{-1}$). The latter is the largest reported in the antiferromagnetic antiperovskite family of compounds.",2310.09616v1 2023-11-22,Reconfigurable Image Processing Metasurfaces with Phase-Change Materials,"Optical metasurfaces have been enabling reduced footprint and power consumption, as well as faster speeds, in the context of analog computing and image processing. While various image processing and optical computing functionalities have been recently demonstrated using metasurfaces, most of the considered devices are static and lack reconfigurability. Yet, the ability to dynamically reconfigure processing operations is key for metasurfaces to be able to compete with practical computing systems. Here, we demonstrate a passive edge-detection metasurface operating in the near-infrared regime whose image processing response can be drastically modified by temperature variations smaller than 10{\deg} C around a CMOS-compatible temperature of 65{\deg} C. Such reconfigurability is achieved by leveraging the insulator-to-metal phase transition of a thin buried layer of vanadium dioxide which, in turn, strongly alters the nonlocal response of the metasurface. Importantly, this reconfigurability is accompanied by performance metrics - such as high numerical aperture, high efficiency, isotropy, and polarization-independence - close to optimal, and it is combined with a simple geometry compatible with large-scale manufacturing. Our work paves the way to a new generation of ultra-compact, tunable, passive devices for all-optical computation, with potential applications in augmented reality, remote sensing and bio-medical imaging.",2311.13109v1 2023-12-29,Optical detection of small polarons in vanadium dioxide and their critical role in mediating metal-insulator transition,"In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We demonstrate that polaron dynamics play a complementary role in facilitating Peierls and Mott transitions to contribute to the MIT processes. Moreover, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film provide valuable insights into their electron structures. This study provides an understanding of the MIT mechanism in correlated systems and highlights how polarons, lattice distortions and electron correlations facilitate the phase transition processes in strongly-correlated systems, while further inspiring the development of new device functionalities.",2312.17419v1 2024-01-31,Phase Transition of the single-layer vanadium diselenide on Au(111) with distinguished electronic structures,"Herein, we report the reversible structure transition of the single-layer VSe2 grown on Au (111) with the alternating thermal annealing and Se replenishment. Using scanning tunnelling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxially growth of high-quality VSe2 on Au (1 1 1) with the octahedral (1T) structure and the Se-vacancy-induced structure transformation of VSe2 from the metallic Morrie (1T) phase to the semiconducting (2H) phase with an increased in-plane lattice constant. With the convincing agreement between the experimental results and DFT calculations, the nanostructure near the gain boundary in the defective intermediate phase is confirmed, as well as the reaction pathway with Se gradually depleted at elevated temperatures. It is revealed that the Se density of the line-shape defects plays an important role in the formation of the 2H domain phase, due to the increment of the in-plane lattice parameter after the Se desorption, and the better thermal stability of 2H phase compared to the 1T phase. Importantly, the proper control of the density of Se could feasibly manipulate the ratio between the 1T and 2H phase in the steak domain, which is regard as a good platform for the 2D homojunctions in nanoelectronics.",2401.17562v1 2024-02-06,Physics-based Modeling of Pulse and Relaxation of High-rate Li/CF$_{x}$-SVO batteries in Implantable Medical Devices,"We present a physics-based model that accurately predicts the performance of Medtronic's implantable medical device battery lithium/carbon monofluoride (CF$_x$) - silver vanadium oxide (SVO) under both low-rate background monitoring and high-rate pulsing currents. The distinct properties of multiple active materials are reflected by parameterizing their thermodynamics, kinetics, and mass transport properties separately. Diffusion limitations of Li$^+$ in SVO are used to explain cell voltage transient behavior during pulse and post-pulse relaxation. We also introduce change in cathode electronic conductivity, Li metal anode surface morphology, and film resistance buildup to capture evolution of cell internal resistance throughout multi-year electrical tests. We share our insights on how the Li$^+$ redistribution process between active materials can restore pulse capability of the hybrid electrode, allow CF$_x$ to indirectly contribute to capacity release during pulsing, and affect the operation protocols and design principles of batteries with other hybrid electrodes. We also discuss additional complexities in porous electrode model parameterization and electrochemical characterization techniques due to parallel reactions and solid diffusion pathways across active materials. We hope our models implemented in the Hybrid Multiphase Porous Electrode Theory (Hybrid-MPET) framework can complement future experimental research and accelerate development of multi-active material electrodes with targeted performance.",2402.03677v1 2024-02-16,X-ray Linear Dichroic Tomography of Crystallographic and Topological Defects,"The functionality of materials is determined by their composition and microstructure, that is, the distribution and orientation of crystalline grains, grain boundaries and the defects within them. The characterisation of the material's microstructure is therefore critical for materials applications such as catalysis, energy storage and buildings. Until now, characterization techniques that map the distribution of grains, their orientation, and the presence of defects have either been limited to surface investigations, to spatial resolutions of a few hundred nanometres, or to systems of thickness around one hundred nanometres, thus requiring destructive sample preparation for measurements and preventing the study of system-representative volumes or the investigation of materials under operational conditions. Here, we present X-ray linear dichroic orientation tomography, a quantitative, non-invasive technique that allows for an intra- and inter-granular characterisation of extended polycrystalline and amorphous materials in three dimensions (3D). We present the detailed characterisation of a polycrystalline sample of vanadium pentoxide (V2O5), a key catalyst in the production of sulfuric acid. In addition to determining the nanoscale composition, we map the crystal orientation throughout the polycrystalline sample with 73 nm spatial resolution. We identify grains, as well as twist, tilt, and twin grain boundaries. We further observe the creation and annihilation of topological defects promoted by the presence of volume crystallographic defects in 3D. Our method's non-destructive and spectroscopic nature opens the door to in-operando combined chemical and microstructural investigations of functional materials, including energy and mechanical materials in existing industries, as well as quantum materials for future technologies.",2402.10647v1 2024-03-12,Metastable ordered states induced by low temperature annealing of δ-Ag2/3V2O5,"In {\delta}-Ag2/3V2O5 with charge degrees of freedom in V, it is known that the charge ordering state and physical properties of V that appear at low temperatures depend strongly on the ordering state of Ag. In this study, we focused on the Ag ions in the interlayer and studied the structure using synchrotron radiation powder diffraction in dependence on temperature. We found that when the sample is slowly cooled from room temperature and ordering occurs at the Ag sites, V4+/V5+ charge ordering of V and subsequent V4+-V4+ structural dimers are produced. Although quenching the sample from room temperature suppresses the ordering of Ag, annealing at around 160 K promotes partial ordering of Ag and allows a metastable phase to be realized. This metastable phase is maintained even when the temperature is lowered again, producing a remarkable change in low-temperature properties. These results indicate that the ordered state of Ag, which is the key to control the charge-ordered state and physical properties, can be controlled by low-temperature annealing. The results of this study may provide a methodology for the realization of metastable states in a wide range of material groups of vanadium compounds, where competition among various charge ordered states underlies the physical properties.",2403.07276v1 2024-03-20,Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors,"Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO$_{2}$ devices embedded in a broad-band test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20~ps long, $<$1.7~V amplitude voltage pulses at 15~ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.",2403.13530v1 2024-04-11,The photoinduced hidden metallic phase of monoclinic VO2 driven by local nucleation via a self-amplification process,"The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant controversy persists regarding the formation of the IMT, specifically concerning whether a complete structural phase transition from monoclinic (M1) to rutile (R) phase is necessary. Here we employ the real-time time-dependent density functional theory (rt-TDDFT) to track the dynamic evolution of atomic and electronic structures in photoexcited VO2, revealing the emergence of a long-lived monoclinic metal phase (MM) under low electronic excitation. The emergence of the metal phase in the monoclinic structure originates from the dissociation of the local V-V dimer, driven by the self-trapped and self-amplified dynamics of photoexcited holes, rather than by a pure electron-electron correction. On the other hand, the M1-to-R phase transition does appear at higher electronic excitation. Our findings validate the existence of MM phase and provide a comprehensive picture of the IMT in photoexcited VO2.",2404.07693v1 2001-06-14,New Analyses of Star-to-Star Abundance Variations Among Bright Giants in the Mildly Metal-Poor Globular Cluster M5,"We present a chemical composition analysis of 36 giant stars in the mildly metal-poor globular cluster M5 (NGC 5904). The analysis makes use of high resolution data acquired at the Keck I telescope as well as a re-analysis of high resolution spectra acquired for an earlier study at Lick Observatory. We employed two analysis techniques: one, adopting standard spectroscopic constraints, and two, adopting an analysis consistent with the non-LTE precepts as recently described by Thevenin & Idiart. The abundance ratios we derive for magnesium, silicon, calcium, scandium, titanium, vanadium, nickel, barium and europium in M5 show no significant abundance variations and the ratios are comparable to those of halo field stars. However, large variations are seen in the abundances of oxygen, sodium and aluminum, the elements that are sensitive to proton-capture nucleosynthesis. In comparing the abundances of M5 and M4 (NGC 6121), another mildly metal-poor globular cluster, we find that silicon, aluminum, barium and lanthanum are overabundant in M4 with respect to what is seen in M5, confirming and expanding the results of previous studies. In comparing the abundances between these two clusters and others having comparable metallicities, we find that the anti-correlations observed in M5 are similar to those found in more metal-poor clusters, M3, M10 and M13, whereas the behavior in M4 is more like that of the more metal-rich globular cluster M71. We conclude that among stars in Galactic globular clusters, there is no definitive ``single'' value of [el/Fe] at a given [Fe/H] for at least some alpha-capture, odd-Z and slow neutron-capture process elements, in this case, silicon, aluminum, barium and lanthanum.",0106249v1 2005-11-15,"Discovery of a Very Young Field L Dwarf, 2MASS J01415823-4633574","While following up L dwarf candidates selected photometrically from the Two Micron All Sky Survey, we uncovered an unusual object designated 2MASS J01415823-4633574. Its optical spectrum exhibits very strong bands of vanadium oxide but abnormally weak absorptions by titanium oxide, potassium, and sodium. Morphologically such spectroscopic characteristics fall intermediate between old, field early-L dwarfs (log(g)~5) and very late M giants (log(g)~0), leading us to favor low gravity as the explanation for the unique spectral signatures of this L dwarf. Such a low gravity can be explained only if this L dwarf is much lower in mass than a typical old field L dwarf of similar temperature and is still contracting to its final radius. These conditions imply a very young age. Further evidence of youth is found in the near-infrared spectrum, including a triangular-shaped H-band continuum reminiscent of young brown dwarf candidates discovered in the Orion Nebula Cluster. Using the above information along with comparisons to brown dwarf atmospheric and interior models, our current best estimate is that this L dwarf has an age of 1-50 Myr and a mass of 6-25 M_Jupiter. The location of 2MASS 0141-4633 on the sky coupled with a distance estimate of ~35 pc and the above age estimate suggests that this object may be a brown dwarf member of either the 30-Myr-old Tucana/Horologium Association or the ~12-Myr-old beta Pic Moving Group.",0511462v1 2010-05-20,Metals in the Exosphere of the Highly Irradiated Planet WASP-12b,"We present near-UV transmission spectroscopy of the highly irradiated transiting exoplanet WASP-12b, obtained with the Cosmic Origins Spectrograph on the Hubble Space Telescope. The spectra cover three distinct wavelength ranges: NUVA (2539-2580 {\AA}), NUVB (2655-2696 {\AA}), and NUVC (2770-2811 {\AA}). Three independent methods all reveal enhanced transit depths attributable to absorption by resonance lines of metals in the exosphere of WASP-12b. Light curves of total counts in the NUVA and NUVC wavelength ranges show a detection at a 2.5{\sigma} level. We detect extra absorption in the Mg II {\lambda}{\lambda}2800 resonance line cores at the 2.8{\sigma} level. The NUVA, NUVB, and NUVC light curves imply effective radii of 2.69+/-0.24 RJ, 2.18+/-0.18 RJ, and 2.66+/-0.22 RJ respectively, suggesting the planet is surrounded by an absorbing cloud which overfills the Roche lobe. We detect enhanced transit depths at the wavelengths of resonance lines of neutral sodium, tin, and manganese, and at singly ionized ytterbium, scandium, manganese, aluminum, vanadium, and magnesium. We also find the statistically expected number of anomalous transit depths at wavelengths not associated with any known resonance line. Our data are limited by photon noise, but taken as a whole the results are strong evidence for an extended absorbing exosphere surrounding the planet. The NUVA data exhibit an early ingress, contrary to model expectations; we speculate this could be due to the presence of a disk of previously stripped material.",1005.3656v1 2011-04-20,Phase separation and frustrated square lattice magnetism of Na1.5VOPO4F0.5,"Crystal structure, electronic structure, and magnetic behavior of the spin-1/2 quantum magnet Na1.5VOPO4F0.5 are reported. The disorder of Na atoms leads to a sequence of structural phase transitions revealed by synchrotron x-ray powder diffraction and electron diffraction. The high-temperature second-order alpha <--> beta transition at 500 K is of the order-disorder type, whereas the low-temperature beta <--> gamma+gamma' transition around 250 K is of the first order and leads to a phase separation toward the polymorphs with long-range (gamma) and short-range (gamma') order of Na. Despite the complex structural changes, the magnetic behavior of Na1.5VOPO4F0.5 probed by magnetic susceptibility, heat capacity, and electron spin resonance measurements is well described by the regular frustrated square lattice model of the high-temperature alpha-polymorph. The averaged nearest-neighbor and next-nearest-neighbor couplings are J1 ~ -3.7 K and J2 ~ 6.6 K, respectively. Nuclear magnetic resonance further reveals the long-range ordering below TN = 2.6 K in low magnetic fields. Although the experimental data are consistent with the simplified square-lattice description, band structure calculations suggest that the ordering of Na atoms introduces a large number of inequivalent exchange couplings that split the square lattice into plaquettes. Additionally, the direct connection between the vanadium polyhedra induces an unusually strong interlayer coupling having effect on the transition entropy and the transition anomaly in the specific heat. Peculiar features of the low-temperature crystal structure and the relation to isostructural materials suggest Na1.5VOPO4F0.5 as a parent compound for the experimental study of tetramerized square lattices as well as frustrated square lattices with different values of spin.",1104.4017v1 2013-01-31,Defect states and excitations in a Mott insulator with orbital degrees of freedom: Mott-Hubbard gap versus optical and transport gaps in doped systems,"We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model extended by terms that describe crystal-field splittings and orbital-lattice coupling, as well as by terms generated by defects such as the Coulomb potential terms that act both on doped holes and on electrons within occupied orbitals at undoped sites. We show that the multiplet structure of the excited states generated in such systems by strong electron interactions is well described within the unrestricted Hartree-Fock approximation, once the symmetry breaking caused by the onset of magnetic and orbital order is taken into account. Furthermore, we uncover new spectral features that arise within the Mott-Hubbard gap and in the multiplet spectrum at high energies due to the presence of defect states and strong correlations. These features reflect the action on electrons/holes of the generalized defect potential that affects charge and orbital degrees of freedom, and indirectly also spin ones. The present study elucidates the mechanism behind the Coulomb gap appearing in the band of defect states and investigates the dependence on the electron-electron interactions and the screening by the orbital polarization field. As an illustrative example of our general approach, we present explicit calculations for the model describing three t_2g orbital flavors in the perovskite vanadates doped by divalent Sr or Ca ions, such as in La_(1-x)Sr_xVO_3 and Y_(1-x)Ca_xVO_3 systems. We analyze the orbital densities at vanadium ions in the vicinity of defects, and the excited defect states which determine the optical and transport gaps in doped systems.",1302.0020v2 2013-05-08,Nucleosynthesis in the accretion disks of Type II collapsars,"We investigate nucleosynthesis inside the gamma-ray burst (GRB) accretion disks formed by the Type II collapsars. In these collapsars, the core collapse of massive stars first leads to the formation of a proto-neutron star and a mild supernova explosion is driven. However, this supernova ejecta lack momentum and falls back onto the neutron star which gets transformed to a stellar mass black hole. In order to study the hydrodynamics and nucleosynthesis of such an accretion disk formed from the fallback material of the supernova ejecta, we use the well established hydrodynamic models. In such a disk neutrino cooling becomes important in the inner disk where the temperature and density are higher. Higher the accretion rate (dot{M}), higher is the density and temperature in the disks. In this work we deal with accretion disks with relatively low accretion rates: 0.001 M_sun s^{-1} \lesssim dot{M} \lesssim 0.01 M_sun s^{-1} and hence these disks are predominantly advection dominated. We use He-rich and Si-rich abundances as the initial condition of nucleosynthesis at the outer disk, and being equipped with the disk hydrodynamics and the nuclear network code, we study the abundance evolution as matter inflows and falls into the central object. We investigate the variation in the nucleosynthesis products in the disk with the change in the initial abundance at the outer disk and also with the change in the mass accretion rate. We report the synthesis of several unusual nuclei like {31}P, {39}K, {43}Sc, {35}Cl, and various isotopes of titanium, vanadium, chromium, manganese and copper. We also confirm that isotopes of iron, cobalt, nickel, argon, calcium, sulphur and silicon get synthesized in the disk, as shown by previous authors. Much of these heavy elements thus synthesized are ejected from the disk via outflows and hence they should leave their signature in observed data.",1305.1755v1 2013-07-17,BaV3O8: A possible Majumdar-Ghosh system with S=1/2,"BaV3O8 contains both magnetic V4+(S=1/2) ions and non-magnetic V5+(S=0) ions. The V4+ ions are arranged in a coupled Majumdar-Ghosh chain like network. Our magnetic susceptibility chi(T) data fit well with the Curie-Weiss formula in the temperature range of 80-300K and it yields a Curie constant C=0.39cm3K/mole-V4+ and an antiferromagnetic Weiss temperature theta=-26K. The chi(T) curve shows a broad maximum at T~25K indicative of short-range order (SRO) and an anomaly corresponding to long-range order (LRO) at TN~6K. The value of the frustration index (f=mod[theta/TN]~5) suggests that the system is moderately frustrated. Above the LRO temperature the experimental magnetic susceptibility data match well with the coupled Majumdar-Ghosh chain model with the ratio of the nnn (next-nearest neighbor) to nn (nearest neighbor) magnetic coupling alpha=2 and Jnnn/kB=40K. In a mean-field approach when considering the inter-chain interactions, we obtain the total inter-chain coupling to be about 16K. The LRO anomaly at TN is also observe in the specific heat Cp(T) data and is not sensitive to an applied magnetic field up to 90kOe. A 51V NMR signal corresponding to the non-magnetic vanadium was observed. Anomalies at 6K were observed in the variation with temperature of the 51V NMR linewidth and in the spin-lattice relaxation rate 1/T1, indicating that they are sensitive to the LRO onset and fluctuations at the magnetic V sites. The existence of two components (one short and another long) is observed in the spin-spin relaxation rate 1/T2 data in the vicinity of TN. The shorter component seems to be intimately connected with the magnetically ordered state. We suggest that both magnetically ordered and non-long range ordered (non-LRO) regions coexist in this compound below the long range ordering temperature.",1307.4730v1 2015-02-06,Transcriptomic and metabolomic analysis of copper stress acclimation in Ectocarpus siliculosus highlights signaling and tolerance mechanisms in brown algae,"Brown algae are sessile macro-organisms of great ecological relevance in coastal ecosystems. They evolved independently from land plants and other multicellular lineages, and therefore hold several original ontogenic and metabolic features. Most brown algae grow along the coastal zone where they face frequent environmental changes, including exposure to toxic levels of heavy metals such as copper (Cu). We carried out large-scale transcriptomic and metabolomic analyses to decipher the short-term acclimation of the brown algal model E. siliculosus to Cu stress, and compared these data to results known for other abiotic stressors. This comparison demonstrates that Cu induces oxidative stress in E. siliculosus as illustrated by the transcriptomic overlap between Cu and H2O2 treatments. The common response to Cu and H2O2 consisted in the activation of the oxylipin and the repression of inositol signaling pathways, together with the regulation of genes coding for several transcription-associated proteins. Concomitantly, Cu stress specifically activated a set of genes coding for orthologs of ABC transporters, a P1B-type ATPase, ROS detoxification systems such as a vanadium-dependent bromoperoxidase, and induced an increase of free fatty acid contents. Finally we observed, as a common abiotic stress mechanism, the activation of autophagic processes on one hand and the repression of genes involved in nitrogen assimilation on the other hand. Comparisons with data from green plants indicate that some processes involved in Cu and oxidative stress response are conserved across these two distant lineages. At the same time the high number of yet uncharacterized brown alga-specific genes induced in response to copper stress underlines the potential to discover new components and molecular interactions unique to these organisms. Of particular interest for future research is the potential cross-talk between reactive oxygen species (ROS)-, myo-inositol-, and oxylipin signaling.",1502.02001v1 2015-05-07,Role of orbital degrees of freedom in investigating the magnetic properties of geometrically frustrated vanadium spinels,"The inconsistency about the degree of geometrical frustration has been a long issue in AV$_{2}$O$_{4}$ (A $\equiv$ Zn, Cd and Mg) compounds, which arises from the two experimental results: (i) frustration indices and (ii) magnetic moments. In the present study, we try to understand such inconsistency by using {\it ab initio} electronic structure calculations. The orbital degrees of freedom are found to play an important role in understanding the geometrically frustrated magnetic behaviour of these compounds. The inclusion of the orbital and spin angular momenta for calculating the frustration indices improves the understanding about the degree of geometrical frustration in these compounds. The calculated values of the frustration indices ($f$$_{\it J}$) are largest for MgV$_{2}$O$_{4}$ and smallest for CdV$_{2}$O$_{4}$ for 3.3$\leq$ $U \leq$5.3 eV. In this range of $U$, the calculated values of $\Delta$M$_{2}$=M$_{\rm total}$-M$_{\rm exp}$ are largest for MgV$_{2}$O$_{4}$ and smallest for CdV$_{2}$O$_{4}$. Hence, the consistency about the degree of geometrical frustration is achieved. The absolute values of the nearest neighbour exchange coupling constant ({\it J$_{nn}$}) between V spins are found to be largest for MgV$_{2}$O$_{4}$ and smallest for CdV$_{2}$O$_{4}$, which indicate that the calculated absolute values of the Curie-Weiss temperature ($\varTheta$$_{CW}$)$_{\it J}$ are highest for MgV$_{2}$O$_{4}$ and smallest for CdV$_{2}$O$_{4}$ for 3.3$\leq$ $U \leq$5.3 eV. In this range of $U$, the magnetic transition temperature ($T$$_{N}$)$_{\it J}$ is found to be $\sim$150 K, $\sim$60 K and $\sim$22 K for MgV$_{2}$O$_{4}$, ZnV$_{2}$O$_{4}$ and CdV$_{2}$O$_{4}$, respectively, which shows that the order of ($T$$_{N}$)$_{\it J}$ is similar to that of ($T$$_{N}$)$_{\rm exp}$ for these compounds.",1505.01601v2 2015-12-30,"The phase transition in VO2 probed using x-ray, visible and infrared radiations","Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here we use transmission of spatially averaged infrared ({\lambda}=1500 nm) and visible ({\lambda}=500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays ({\lambda}=2.25-2.38 nm) to probe the same VO2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occur at significantly lower temperatures than the Mott transition; and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.",1512.08921v2 2016-06-01,An optical transmission spectrum of the transiting hot Jupiter in the metal-poor WASP-98 planetary system,"The WASP-98 planetary system represents a rare case of a hot Jupiter hosted by a metal-poor main-sequence star. We present a follow-up study of this system based on multi-band photometry and high-resolution spectroscopy. Two new transit events of WASP-98b were simultaneously observed in four passbands (g,r,i,z), using the telescope-defocussing technique, yielding eight high-precision light curves with point-to-point scatters of less than 1 mmag. We also collected three spectra of the parent star with a high-resolution spectrograph, which we used to remeasure its spectral characteristics, in particular its metallicity. We found this to be very low, Fe/H]=-0.49, but larger than was previously reported, [Fe/H]=-0.60. We used these new photometric and spectroscopic data to refine the orbital and physical properties of this planetary system, finding that the stellar and planetary mass measurements are significantly larger than those in the discovery paper. In addition, the multi-band light curves were used to construct an optical transmission spectrum of WASP-98b and probe the characteristics of its atmosphere at the terminator. We measured a lower radius at z compared with the other three passbands. The maximum variation is between the r and z bands, has a confidence level of roughly 6 sigma and equates to 5.5 pressure scale heights. We compared this spectrum to theoretical models, investigating several possible types of atmospheres, including hazy, cloudy, cloud-free, and clear atmospheres with titanium and vanadium oxide opacities. We could not find a good fit to the observations, except in the extreme case of a clear atmosphere with TiO and VO opacities, in which the condensation of Ti and V was suppressed. As this case is unrealistic, our results suggest the presence of an additional optical-absorbing species in the atmosphere of WASP-98b, of unknown chemical nature.",1606.00432v1 2016-11-07,Self-consistent evaluation of effective Coulomb interaction of V atom and its importance to understand the comparative electronic behaviour of vanadium spinels,"In present work, we try to understand the importance of effective Coulomb interaction ($U_{ef}$) between localized electrons of V atom to understand the comparative electronic behaviour of AV$_{2}$O$_{4}$ (A=Zn, Cd and Mg) compounds. The suitable values of $d$-linearization energy ($E_{d}$) of impurity V atom for calculating the $U_{ef}$ for these compounds are found to be $\geq$44.89 eV above the Fermi level. Corresponding to these values of $E_{d}$, the self-consistently calculated values of effective $U_{LSDA}$ ($U_{PBEsol}$) for ZnV$_{2}$O$_{4}$, MgV$_{2}$O$_{4}$ and CdV$_{2}$O$_{4}$ are $\sim$5.73 ($\sim$5.92), $\sim$6.06 ($\sim$6.22) and $\sim$5.59 ($\sim$5.71) eV, respectively. The calculated values of $\frac{t}{U_{ef}}$ ($t$ is the transfer integral between neighbouring sites) increases with decreasing V-V distance from CdV$_{2}$O$_{4}$ to MgV$_{2}$O$_{4}$ to ZnV$_{2}$O$_{4}$ and are found to be consistent with experimentally reported band gap. The values of $\frac{t}{U_{ef}}$ for ZnV$_{2}$O$_{4}$, MgV$_{2}$O$_{4}$ and CdV$_{2}$O$_{4}$ are found to be $\sim$0.023, $\sim$0.020 and $\sim$0.018, respectively. Hence, CdV$_{2}$O$_{4}$ with small (large) $\frac{t}{U_{ef}}$ (experimental band gap) as compared to ZnV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$ is found to be in localized-electron regime, while ZnV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$ are intermediate between localized and an itinerant-electron regime. The calculated values of lattice parameters $a_{LSDS}$ ($a_{PBEsol}$) are found to be $\sim$1.7\%, $\sim$2.0\% and $\sim$2.4\% ($\sim$0.6\%, $\sim$0.7\% and $\sim$0.7\%) smaller than $a_{exp}$ for CdV$_{2}$O$_{4}$, MgV$_{2}$O$_{4}$ and ZnV$_{2}$O$_{4}$, respectively, which indicates that the PBEsol functional predicts the lattice parameters in good agreement with the experimental data.",1611.02028v1 2016-12-05,Electronic structure study of vanadium spinels by using density functional theory and dynamical mean field theory,"Theoretically, various physical properties of AV$_{2}$O$_{4}$ (A=Zn, Cd and Mg) spinels have been extensively studied for last 15 years. Besides of this, no systematic comparative study has been done for these compounds, where the material specific parameters are used. Here, we report the comparative electronic behaviour of these spinels by using a combination of density functional theory and dynamical mean-field theory, where the self-consistent calculated Coulomb interaction $U$ and Hund's coupling $J$ (determined by Yukawa screening $\lambda$) are used. The main features, such as insulating band gaps ($E_{g}$), degree of itinerancy of V 3$d$ electrons and position of lower Hubbard band are observed for these parameters in these spinels. The calculated values of $E_{g}$ for ZnV$_{2}$O$_{4}$, CdV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$ are found to be $\sim$0.9 eV, $\sim$0.95 eV and $\sim$1.15 eV, respectively, where the values of $E_{g}$ are close to experiment for ZnV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$. The position of lower Hubbard band are observed around $\sim$-1.05 eV, $\sim$-1.25 eV and $\sim$-1.15 eV for ZnV$_{2}$O$_{4}$, CdV$_{2}$O$_{4}$ and MgV$_{2}$O$_{4}$, respectively, which are also in good agreement with the experimental data for ZnV$_{2}$O$_{4}$. The order of average impurity hybridization function of V site are found to be ZnV$_{2}$O$_{4}$$>$MgV$_{2}$O$_{4}$$>$CdV$_{2}$O$_{4}$. Hence, the degree of localization of V 3$d$ electrons is largest for CdV$_{2}$O$_{4}$ and smallest for ZnV$_{2}$O$_{4}$, which is in accordance with our earlier results. Hence, present work shows the importance of material specific parameters to understand the comparative electronic behaviour of these compounds.",1612.01273v2 2017-08-03,An ultrahot gas-giant exoplanet with a stratosphere,"Infrared radiation emitted from a planet contains information about the chemical composition and vertical temperature profile of its atmosphere. If upper layers are cooler than lower layers, molecular gases will produce absorption features in the planetary thermal spectrum. Conversely, if there is a stratosphere - where temperature increases with altitude - these molecular features will be observed in emission. It has been suggested that stratospheres could form in highly irradiated exoplanets, but the extent to which this occurs is unresolved both theoretically and observationally. A previous claim for the presence of a stratosphere remains open to question, owing to the challenges posed by the highly variable host star and the low spectral resolution of the measurements. Here we report a near-infrared thermal spectrum for the ultrahot gas giant WASP-121b, which has an equilibrium temperature of approximately 2,500 kelvin. Water is resolved in emission, providing a detection of an exoplanet stratosphere at 5-sigma confidence. These observations imply that a substantial fraction of incident stellar radiation is retained at high altitudes in the atmosphere, possibly by absorbing chemical species such as gaseous vanadium oxide and titanium oxide.",1708.01076v1 2017-08-16,Stochastic IMT (insulator-metal-transition) neurons: An interplay of thermal and threshold noise at bifurcation,"Artificial neural networks can harness stochasticity in multiple ways to enable a vast class of computationally powerful models. Electronic implementation of such stochastic networks is currently limited to addition of algorithmic noise to digital machines which is inherently inefficient; albeit recent efforts to harness physical noise in devices for stochasticity have shown promise. To succeed in fabricating electronic neuromorphic networks we need experimental evidence of devices with measurable and controllable stochasticity which is complemented with the development of reliable statistical models of such observed stochasticity. Current research literature has sparse evidence of the former and a complete lack of the latter. This motivates the current article where we demonstrate a stochastic neuron using an insulator-metal-transition (IMT) device, based on electrically induced phase-transition, in series with a tunable resistance. We show that an IMT neuron has dynamics similar to a piecewise linear FitzHugh-Nagumo (FHN) neuron and incorporates all characteristics of a spiking neuron in the device phenomena. We experimentally demonstrate spontaneous stochastic spiking along with electrically controllable firing probabilities using Vanadium Dioxide (VO$_2$) based IMT neurons which show a sigmoid-like transfer function. The stochastic spiking is explained by two noise sources - thermal noise and threshold fluctuations, which act as precursors of bifurcation. As such, the IMT neuron is modeled as an Ornstein-Uhlenbeck (OU) process with a fluctuating boundary resulting in transfer curves that closely match experiments. As one of the first comprehensive studies of a stochastic neuron hardware and its statistical properties, this article would enable efficient implementation of a large class of neuro-mimetic networks and algorithms.",1708.06238v4 2017-09-13,Detection of titanium oxide in the atmosphere of a hot Jupiter,"As an exoplanet transits its host star, some of the light from the star is absorbed by the atoms and molecules in the planet's atmosphere, causing the planet to seem bigger; plotting the planet's observed size as a function of the wavelength of the light produces a transmission spectrum. Measuring the tiny variations in the transmission spectrum, together with atmospheric modelling, then gives clues to the properties of the exoplanet's atmosphere. Chemical species composed of light elements$-$such as hydrogen, oxygen, carbon, sodium and potassium$-$have in this way been detected in the atmospheres of several hot giant exoplanets, but molecules composed of heavier elements have thus far proved elusive. Nonetheless, it has been predicted that metal oxides such as titanium oxide (TiO) and vanadium oxide occur in the observable regions of the very hottest exoplanetary atmospheres, causing thermal inversions on the dayside. Here we report the detection of TiO in the atmosphere of the hot-Jupiter planet WASP-19b. Our combined spectrum, with its wide spectral coverage, reveals the presence of TiO (to a confidence level of 7.7{\sigma}), a strongly scattering haze (7.4{\sigma}) and sodium (3.4{\sigma}), and confirms the presence of water (7.9{\sigma}) in the atmosphere.",1709.04118v1 2017-10-14,Fingerprints of spin-orbital polarons and of their disorder in the photoemission spectra of doped Mott insulators with orbital degeneracy,"We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites, where $R=$La,$\dots$,Lu. A fundamental characteristic of these vanadium $d^2$ compounds with partly filled $t_{2g}$ valence orbitals is the persistence of spin and orbital order up to high doping, in contrast to the loss of magnetic order in high-$T_c$ cuprates at low defect concentration. We demonstrate that the disordered electronic structure of doped Mott-Hubbard insulators can be obtained with high precision within the unrestricted Hartree-Fock approximation. In particular: (i) the atomic multiplet excitations in the inverse photoemission spectra and the various defect-related states and satellites are well reproduced, (ii) a robust Mott gap survives up to large doping, and (iii) we show that the defect states inside the Mott gap develop a soft gap at the Fermi energy. The soft defect states gap can be characterized by a shape and a scale parameter extracted from a Weibull statistical sampling of the density of states near the chemical potential. We demonstrate that charge defects trigger small spin-orbital polarons, with their internal kinetic energy responsible for the opening of the soft defect states gap. The small size of spin-orbital polarons is inferred by an analysis of the inverse participation ratio which explains the origin of the robustness of spin and orbital order. Using realistic parameters for La$_{1-x}$Ca$_x$VO$_3$, we show that its soft gap is well reproduced as well as the marginal doping dependence of the position of the chemical potential relative to the center of the lower Hubbard band.",1710.05171v1 2018-02-22,"Super-Solar Metallicity Stars in the Galactic Center Nuclear Star Cluster: Unusual Sc, V, and Y Abundances","We present adaptive-optics assisted near-infrared high-spectral resolution observations of late-type giants in the nuclear star cluster of the Milky Way. The metallicity and elemental abundance measurements of these stars offer us an opportunity to understand the formation and evolution of the nuclear star cluster. In addition, their proximity to the supermassive black hole ($\sim 0.5$ pc) offers a unique probe of the star formation and chemical enrichment in this extreme environment. We observed two stars identified by medium spectral-resolution observations as potentially having very high metallicities. We use spectral-template fitting with the PHOENIX grid and Bayesian inference to simultaneously constrain the overall metallicity, [M/H], alpha-element abundance [$\alpha$/Fe], effective temperature, and surface gravity of these stars. We find that one of the stars has very high metallicity ([M/H] $> 0.6$) and the other is slightly above solar metallicity. Both Galactic center stars have lines from scandium (Sc), vanadium (V), and yttrium (Y) that are much stronger than allowed by the PHOENIX grid. We find, using the spectral synthesis code Spectroscopy Made Easy, that [Sc/Fe] may be an order of magnitude above solar. For comparison, we also observed an empirical calibrator in NGC6791, the highest metallicity cluster known ([M/H] $\sim 0.4$). Most lines are well matched between the calibrator and the Galactic center stars, except for Sc, V, and Y, which confirms that their abundances must be anomalously high in these stars. These unusual abundances, which may be a unique signature of nuclear star clusters, offer an opportunity to test models of chemical enrichment in this region.",1802.08270v2 2018-05-02,Performance Enhancement of Nanoscale ${\rm VO}_2$ Modulators Using Hybrid Plasmonics,"Vanadium dioxide (${\rm VO}_2$) is a phase change material (PCM) that exhibits a large change in complex refractive index on the order of unity upon switching from its dielectric to its metallic phase. Although this property is key for the design of ultracompact optical modulators of only a few microns in footprint, the high absorption of ${\rm VO}_2$ leads to appreciable insertion loss (IL) that limits the modulator performance. In this paper, through theory and numerical modeling, we report on a new paradigm, which demonstrates how the use of a hybrid plasmonic waveguide to construct a ${\rm VO}_2$ based modulator can improve the performance by minimizing its IL while achieving high extinction ratio (ER) in comparison to a purely dielectric waveguide. The hybrid plasmonic waveguide that contains an additional metal layer with even higher loss than ${\rm VO}_2$ enables unique approaches to engineer the electric field (E-field) intensity distribution within the cross section of the modulator. The resulting figure-of-merit, FoM = ER/IL, is much higher than what is possible by simply incorporating ${\rm VO}_2$ into a silicon wire waveguide. A practical modulator design using this new approach, which also includes input and output couplers yields ER = 3.8 dB/{\mu}m and IL = 1.4 dB/{\mu}m (FoM = 2.7), with a 3-dB optical bandwidth >500 nm, in a device length = 2 {\mu}m, and cross-sectional dimensions = 200 nm $\times$ 450 nm. To the best of our knowledge, this is one of the smallest modulator designs proposed to date that also exhibits amongst the highest ER, FoM, and optical bandwidth, in comparison to existing designs. In addition to ${\rm VO}_2$, we investigate two other PCMs incorporated within the waveguide structure. The improvements obtained for ${\rm VO}_2$ modulators do not extend to other PCMs.",1805.01005v1 2018-07-15,LiZn$_{2}$V$_{3}$O$_{8}$: A new geometrically frustrated cluster spin-glass,"We have investigated the structural and magnetic properties of a new cubic spinel LiZn$_{2}$V$_{3}$O$_{8}$ (LZVO) through x-ray diffraction, dc and ac susceptibility, magnetic relaxation, aging, memory effect, heat capacity and $^{7}$Li nuclear magnetic resonance (NMR) measurements. A Curie-Weiss fit of the dc susceptibility $\chi_{\mathrm{dc}}$($\mathit{T}$) yields a Curie-Weiss temperature $\mathrm{\theta}_{\mathrm{CW}}$ = -185 K. This suggests strong antiferromagnetic (AFM) interactions among the magnetic vanadium ions. The dc and ac susceptibility data indicate the spin-glass behavior below a freezing temperature $T_{f}$ $\simeq$ 3 K. The frequency dependence of the $T_{f}$ is characterized by the Vogel-Fulcher law and critical dynamic scaling behavior or power law. From both fitting, we obtained the value of the characteristic angular frequency $\omega_{0}$ $\approx$ 3.56$\times$10$^{6}$ Hz, the dynamic exponent $\mathit{zv}$ $\approx$ 2.65, and the critical time constant $\tau_{0}$ $\approx$ 1.82$\times$10$^{-6}$ s, which falls in the conventional range for typical cluster spin-glass (CSG) systems. The value of relative shift in freezing temperature $\delta T_{f}$ $\simeq$ 0.039 supports a CSG ground states. We also found aging phenomena and memory effects in LZVO. The asymmetric response of the magnetic relaxation below $T_{f}$ supports the hierarchical model. Heat capacity data show no long-range or short-range ordering down to 2 K. Only about 25% magnetic entropy change $(\Delta S_{\mathrm{m}})$ signifies the presence of strong frustration in the system. The $^{7}$Li NMR spectra show a shift and broadening with decreasing temperature. The spin-lattice and spin-spin relaxation rates show anomalies due to spin freezing around 3 K as the bulk magnetization.",1807.05612v3 2019-10-03,Control of spintronic and electronic properties of bimetallic and vacancy-ordered vanadium carbide MXenes via surface functionalization,"MXenes are 2D transition metal carbides with high potential for overcoming limitations of conventional two-dimensional electronics. In this context, various MXenes have shown magnetic properties suitable for applications in spintronics, yet the number of MXenes reported so far is far smaller than their parental MAX phases. Therefore, we have studied the structural, electronic and magnetic properties of bimetallic and vacancy-ordered MXenes derived from a new $(V_{2/3}Zr_{1/3})_2AlC $ MAX phase to assess whether MXene exfoliation would return stable magnetic materials. In particular, we have investigated the properties of pristine and surface-functionalized $(V_{2/3}Zr_{1/3})_2CX_2$ bimetallic and $(V_{2/3} \square_{1/3})_2CX2$ vacancy-ordered MXenes with X = O, F and OH. Our density functional theory (DFT) calculations showed that modifying the MXene stoichiometry and/or MXene surface functionalization changes MXene properties. After testing all possible combinations of metallic motifs and functionalization, we identified $V_{2/3}Zr_{1/3})_2CX_2$, $(V_{2/3}\square_{1/3})_2CF_2$ and $(V_{2/3}\square_{1/3})_2C(OH)_2$ as stable structures. Among them, $(V_{2/3}Zr_{1/3})_2CO_2$ MXene is predicted to be an FM intrinsic half-semiconductor with a remarkably high Curie temperature ($T_C$)) of 270 K. The $(V_{2/3}Zr_{1/3})_2C(OH)_2$ MXene exhibits a rather low work function (WF) (1.37 eV) and is thus a promising candidate for ultra-low work function electron emitters. Conversely, the $(V_{2/3}\square_{1/3})_2CF_2$ MXene has a rather high WF and hence can be used as a hole injector for Schottky-barrier-free contact applications. Overall, our proof-of-concept study shows that theoretical predictions of MXene exfoliation and properties support further experimental research towards developing spintronics devices.",1910.01509v1 2020-01-02,Detailed Iron-Peak Element Abundances in Three Very Metal-Poor Stars,"We have obtained new detailed abundances of the Fe-group elements Sc through Zn (Z=21-30) in three very metal-poor ([Fe/H] $\approx -3$) stars: BD 03 740, BD -13 3442 and CD -33 1173. High-resolution ultraviolet HST/STIS spectra in the wavelength range 2300-3050\AA\ were gathered, and complemented by an assortment of optical echelle spectra. The analysis featured recent laboratory atomic data for number of neutral and ionized species for all Fe-group elements except Cu and Zn. A detailed examination of scandium, titanium, and vanadium abundances in large-sample spectroscopic surveys indicates that they are positively correlated in stars with [Fe/H]<-$2. The abundances of these elements in BD 03 740, BD -13 3442 and CD -33 1173 and HD 84937. (studied in a previous paper of this series) are in accord with these trends and lie at the high end of the correlations. Six elements have detectable neutral and ionized features, and generally their abundances are in reasonable agreement. For Cr we find only minimal abundance disagreement between the neutral (mean of [Cri/Fe]=+0.01) and ionized species (mean of [Crii/Fe]=+0.08), unlike most studies in the past. The prominent exception is Co, for which the neutral species indicates a significant overabundance (mean of [Co/H]=-2.53), while no such enhancement is seen for the ionized species (mean of [Coii/H]=-2.93). These new stellar abundances, especially the correlations among Sc, Ti, and V, suggest that models of element production in early high-mass metal-poor stars should be revisited.",2001.00541v1 2020-01-06,Thermal coupling and effect of subharmonic synchronization in a system of two VO2 based oscillators,"We explore a prototype of an oscillatory neural network (ONN) based on vanadium dioxide switching devices. The model system under study represents two oscillators based on thermally coupled VO2 switches. Numerical simulation shows that the effective action radius RTC of coupling depends both on the total energy released during switching and on the average power. It is experimentally and numerically proved that the temperature change dT commences almost synchronously with the released power peak and T-coupling reveals itself up to a frequency of about 10 kHz. For the studied switching structure configuration, the RTC value varies over a wide range from 4 to 45 mkm, depending on the external circuit capacitance C and resistance Ri, but the variation of Ri is more promising from the practical viewpoint. In the case of a ""weak"" coupling, synchronization is accompanied by attraction effect and decrease of the main spectra harmonics width. In the case of a ""strong"" coupling, the number of effects increases, synchronization can occur on subharmonics resulting in multilevel stable synchronization of two oscillators. An advanced algorithm for synchronization efficiency and subharmonic ratio calculation is proposed. It is shown that of the two oscillators the leading one is that with a higher main frequency, and, in addition, the frequency stabilization effect is observed. Also, in the case of a strong thermal coupling, the limit of the supply current parameters, for which the oscillations exist, expands by ~ 10 %. The obtained results have a universal character and open up a new kind of coupling in ONNs, namely, T-coupling, which allows for easy transition from 2D to 3D integration. The effect of subharmonic synchronization hold promise for application in classification and pattern recognition.",2001.01382v1 2020-03-18,Imaging domain reversal in an ultrathin van der Waals ferromagnet,"The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. However, the microscopic details of fundamental processes such as the initial magnetization or domain reversal, which govern the magnetic hysteresis, remain largely unknown in the ultrathin limit. Here we employ a widefield nitrogen-vacancy (NV) microscope to directly image these processes in few-layer flakes of magnetic semiconductor vanadium triiodide (VI$_3$). We observe complete and abrupt switching of most flakes at fields $H_c\approx0.5-1$ T (at 5 K) independent of thickness down to two atomic layers, with no intermediate partially-reversed state. The coercive field decreases as the temperature approaches the Curie temperature ($T_c\approx50$ K), however, the switching remains abrupt. We then image the initial magnetization process, which reveals thickness-dependent domain wall depinning fields well below $H_c$. These results point to ultrathin VI$_3$ being a nucleation-type hard ferromagnet, where the coercive field is set by the anisotropy-limited domain wall nucleation field. This work illustrates the power of widefield NV microscopy to investigate magnetization processes in van der Waals ferromagnets, which could be used to elucidate the origin of the hard ferromagnetic properties of other materials and explore field- and current-driven domain wall dynamics.",2003.08470v1 2020-04-01,"A simulational study of the indirect geometry neutron spectrometer, BIFROST at the European Spallation Source, from neutron source position to detector position","The European Spallation Source (ESS) is intended to become the most powerful spallation neutron source in the world and the flagship of neutron science in the upcoming decades. The exceptionally high neutron flux will provide unique opportunities for scientific experiments, but also set high requirements for the detectors. One of the most challenging aspects is the rate capability and in particular the peak instantaneous rate capability, i.e. the number of neutrons hitting the detector per channel or cm$^2$ at the peak of the neutron pulse. The primary purpose of this paper is to estimate the incident rates that are anticipated for the BIFROST instrument planned for ESS, and also to demonstrate the use of powerful simulation tools for the correct interpretation of neutron transport in crystalline materials. A full simulation model of the instrument from source to detector position, implemented with the use of multiple simulation software packages is presented. For a single detector tube instantaneous incident rates with a maximum of 1.7 GHz for a Bragg peak from a single crystal, and 0.3 MHz for a vanadium sample are found. This paper also includes the first application of a new pyrolytic graphite model, and a comparison of different simulation tools to highlight their strengths and weaknesses.",2004.00335v2 2020-05-05,"ARES I: WASP-76 b, A Tale of Two HST Spectra","We analyse the transmission and emission spectra of the ultra-hot Jupiter WASP-76b, observed with the G141 grism of the Hubble Space Telescope's Wide Field Camera 3 (WFC3). We reduce and fit the raw data for each observation using the open-source software Iraclis before performing a fully Bayesian retrieval using the publicly available analysis suite TauRex 3. Previous studies of the WFC3 transmission spectra of WASP-76 b found hints of titanium oxide (TiO) and vanadium oxide (VO) or non-grey clouds. Accounting for a fainter stellar companion to WASP-76, we reanalyse this data and show that removing the effects of this background star changes the slope of the spectrum, resulting in these visible absorbers no longer being detected, eliminating the need for a non-grey cloud model to adequately fit the data but maintaining the strong water feature previously seen. However, our analysis of the emission spectrum suggests the presence of TiO and an atmospheric thermal inversion, along with a significant amount of water. Given the brightness of the host star and the size of the atmospheric features, WASP-76 b is an excellent target for further characterisation with HST, or with future facilities, to better understand the nature of its atmosphere, to confirm the presence of TiO and to search for other optical absorbers.",2005.02374v2 2020-10-26,"Database, Features, and Machine Learning Model to Identify Thermally Driven Metal-Insulator Transition Compounds","Metal-insulator transition (MIT) compounds are materials that may exhibit insulating or metallic behavior, depending on the physical conditions, and are of immense fundamental interest owing to their potential applications in emerging microelectronics. There is a dearth of thermally-driven MIT materials, however, which makes delineating these compounds from those that are exclusively insulating or metallic challenging. Here we report a material database comprising temperature-controlled MITs (and metals and insulators with similar chemical composition and stoichiometries to the MIT compounds) from high quality experimental literature, built through a combination of materials-domain knowledge and natural language processing. We featurize the dataset using compositional, structural, and energetic descriptors, including two MIT relevant energy scales, an estimated Hubbard interaction and the charge transfer energy, as well as the structure-bond-stress metric referred to as the global-instability index (GII). We then perform supervised classification, constructing three electronic-state classifiers: metal vs non-metal (M), insulator vs non-insulator (I), and MIT vs non-MIT (T). We identify two important descriptors that separate metals, insulators, and MIT materials in a 2D feature space: the average deviation of the covalent radius and the range of the Mendeleev number. We further elaborate on other important features (GII and Ewald energy), and examine how they affect classification of binary vanadium and titanium oxides. We discuss the relationship of these atomic features to the physical interactions underlying MITs in the rare-earth nickelate family. Last, we implement an online version of the classifiers, enabling quick probabilistic class predictions by uploading a crystallographic structure file.",2010.13306v2 2020-12-09,The Breakdown of Mott Physics at VO$_2$ Surfaces,"Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Using synchrotron-based x-ray spectroscopy, low energy electron diffraction (LEED), low energy electron microscopy (LEEM), transmission electron microscopy (TEM), and several other experimental techniques, we show that suppression of the bulk structural transition is a common feature at VO$_2$ surfaces. Our density functional theory (DFT) calculations further suggest that this is due to inherent reconstructions necessary to stabilize the surface, which deviate the electronic structure away from the bulk d$^1$ configuration. Our findings have broader ramifications not only for the characterization of other ""Mott-like"" MITs, but also for any potential device applications of such materials.",2012.05306v1 2020-12-22,An Approach to Implement Photovoltaic Self-Consumption and Ramp-Rate Control Algorithm with a Vanadium Redox Flow Battery Day-to-Day Forecast Charging,"The variability of the solar resource is mainly caused by cloud passing, causing rapid power fluctuations on the output of photovoltaic (PV) systems. The fluctuations can negatively impact the electric grid, and smoothing techniques can be used as attempts to correct it. However, the integration of a PV+VRFB to deal with the extreme power ramps at a building scale is underexplored in the literature, as well as its effectiveness in combination with other energy management strategies (EMSs). This work is focused on using a VRFB to control the power output of the PV installation, maintaining the ramp rate within a non-violation limit and within a battery state of charge (SOC) range, appropriate to perform the ramp rate management. Based on the model simulation, energy key-performance indicators (KPI) are studied, and validation in real-time is carried. Three EMSs are simulated: a self-consumption maximization (SCM), and SCM with ramp rate control (SCM+RR), and this last strategy includes a night battery charging based on a day ahead weather forecast (SCM+RR+WF). Results show a battery SOC management control is essential to apply these EMSs on VRFB, and the online weather forecast proves to be efficient in real-time application. SCM+RR+WF is a robust approach to manage PV+VRFB systems in wintertime (studied application), and high PV penetration building areas make it a feasible approach. Over the studied week, the strategy successfully controlled 100% of the violating power ramps, also obtaining a self-consumption ratio (SCR) of 59% and a grid-relief factor (GRF) of 61%.",2012.11955v4 2021-02-26,Role of chemical disorder in tuning the Weyl points in vanadium doped Co$_2$TiSn,"The lack of time-reversal symmetry and Weyl fermions give exotic transport properties to Co-based Heusler alloys. In the present study, we have investigated the role of chemical disorder on the variation of Weyl points in Co\textsubscript{2}Ti\textsubscript{1-x}V\textsubscript{x}Sn magnetic Weyl semimetal candidate. We employ the first principle approach to track the evolution of the nodal lines responsible for the appearance of Weyl node in Co$_2$TiSn as a function of V substitution in place of Ti. By increasing the V concentration in place of Ti, the nodal line moves toward Fermi level and remains at Fermi level around the middle composition. Further increase of the V content, leads shifting of nodal line away from Fermi level. Density of state calculation shows half-metallic behavior for the entire range of composition. The magnetic moment on each Co atom as a function of V concentration increases linearly up to x=0.4, and after that, it starts decreasing. We also investigated the evolution of the Weyl nodes and Fermi arcs with chemical doping. The first-principles calculations reveal that via replacing almost half of the Ti with V, the intrinsic anomalous Hall conductivity increased twice as compared to the undoped composition. Our results indicate that the composition close to the 50\% V doped Co$_2$TiSn, will be an ideal composition for the experimental investigation of Weyl physics.",2102.13389v2 2021-05-04,Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5,"The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. Here, we combine angle-resolved photoemission spectroscopy and density functional theory to reveal multiple kagome-derived van Hove singularities (vHs) coexisting near the Fermi level of CsV3Sb5 and analyze their contribution to electronic symmetry breaking. Intriguingly, the vHs in CsV3Sb5 have two distinct flavors - p-type and m-type - which originate from their pure and mixed sublattice characters, respectively. This twofold vHs is unique property of the kagome lattice, and its flavor critically determines the pairing symmetry and ground states emerging in AV3Sb5 series. We establish that, among the multiple vHs in CsV3Sb5, the m-type vHs of the dxz/dyz kagome band and the p-type vHs of the dxy/dx2-y2 kagome band cross the Fermi level to set the stage for electronic symmetry breaking. The former band exhibits pronounced Fermi surface nesting, while the latter contributes via higher-order vHs. Our work reveals the essential role of kagome-derived vHs for the collective phenomena realized in the AV3Sb5 family, paving the way to a deeper understanding of strongly correlated topological kagome systems.",2105.01689v2 2021-05-19,Competing superconductivity and charge-density wave in Kagome metal CsV3Sb5: evidence from their evolutions with sample thickness,"Recently superconductivity and topological charge-density wave (CDW) were discovered in the Kagome metals $A$V$_3$Sb$_5$ ($A$ = Cs, Rb, and K), which have an ideal Kagome lattice of vanadium. Here we report resistance measurements on thin flakes of CsV$_3$Sb$_5$ to investigate the evolution of superconductivity and CDW with sample thickness. The CDW transition temperature ${\it T}_{\rm CDW}$ decreases from 94 K in bulk to a minimum of 82 K at thickness of 60 nm, then increases to 120 K as the thickness is reduced further to 4.8 nm (about five monolayers). Since the CDW order in CsV$_3$Sb$_5$ is quite three-dimensional (3D) in the bulk sample, the non-monotonic evolution of ${\it T}_{\rm CDW}$ with reducing sample thickness can be explained by a 3D to 2D crossover around 60 nm. Strikingly, the superconducting transition temperature ${\it T}_{\rm c}$ shows an exactly opposite evolution, increasing from 3.64 K in the bulk to a maximum of 4.28 K at thickness of 60 nm, then decreasing to 0.76 K at 4.8 nm. Such exactly opposite evolutions provide strong evidence for competing superconductivity and CDW, which helps us to understand these exotic phases in $A$V$_3$Sb$_5$ Kagome metals.",2105.09248v1 2021-08-03,A Comparative Study of Atmospheric Chemistry with VULCAN,"We present an update of the open-source photochemical kinetics code VULCAN (Tsai et al. 2017; https://github.com/exoclime/VULCAN) to include C-H-N-O-S networks and photochemistry. Additional new features are advection transport, condensation, various boundary conditions, and temperature-dependent UV cross-sections. First, we validate our photochemical model for hot Jupiter atmospheres by performing an intercomparison of HD 189733b models between Moses et al. (2011), Venot et al. (2012), and VULCAN, to diagnose possible sources of discrepancy. Second, we set up a model of Jupiter extending from the deep troposphere to upper stratosphere to verify the kinetics for low temperature. Our model reproduces hydrocarbons consistent with observations, and the condensation scheme successfully predicts the locations of water and ammonia ice clouds. We show that vertical advection can regulate the local ammonia distribution in the deep atmosphere. Third, we validate the model for oxidizing atmospheres by simulating Earth and find agreement with observations. Last, VULCAN is applied to four representative cases of extrasolar giant planets: WASP-33b, HD 189733b, GJ 436b, and 51 Eridani b. We look into the effects of the C/O ratio and chemistry of titanium/vanadium species for WASP-33b; we revisit HD 189733b for the effects of sulfur and carbon condensation; the effects of internal heating and vertical mixing ($K_{\textrm{zz}}$) are explored for GJ 436b; we test updated planetary properties for 51 Eridani b with S$_8$ condensates. We find sulfur can couple to carbon or nitrogen and impact other species such as hydrogen, methane, and ammonia. The observable features of the synthetic spectra and trends in the photochemical haze precursors are discussed for each case.",2108.01790v2 2021-10-21,Titanium doped kagome superconductor CsV3-xTixSb5 and two distinct phases,"The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity (SC). The origins of CDWs, unconventional SC, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV3Sb5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV3-xTixSb5 shows two distinct SC phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped SC gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped SC gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the SC phase and CDWs. These findings open up a way to synthesise a new family of doped CsV3Sb5 materials, and further representing a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.",2110.11228v2 2022-01-30,Type-II Dirac Nodal Lines in double-kagome-layered CsV$_8$Sb$_{12}$,"Lorentz-violating type-II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel states of matter. While being studied extensively in theory, convincing experimental evidences of type-II DNLSs remain elusive. Recently, Vanadium-based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. In this work, we study the low-energy band structure of double-kagome-layered CsV$_8$Sb$_{12}$ and identify it as a scarce type-II DNLS protected by mirror symmetry. We have observed multiple DNLs consisting of type-II Dirac cones close to or almost at the Fermi level via angle-resolved photoemission spectroscopy (ARPES). First-principle analyses show that spin-orbit coupling only opens a small gap, resulting effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type-II DNLs, together with the interaction between a low-energy van Hove singularity and quasi-1D band as we observed in the same material, suggest CsV$_8$Sb$_{12}$ as an ideal platform for exploring novel transport properties such as chiral anomaly, the Klein tunneling and fractional quantum Hall effect.",2201.12851v2 2022-02-17,Ultrafast X-ray imaging of the light-induced phase transition in VO2,"Using light to control transient phases in quantum materials is an emerging route to engineer new properties and functionality, with both thermal and non-thermal phases observed out of equilibrium. Transient phases are expected to be heterogeneous, either through photo-generated domain growth or by generating topological defects, and this impacts the dynamics of the system. However, this nanoscale heterogeneity has not been directly observed. Here we use time- and spectrally resolved coherent X-ray imaging to track the prototypical light induced insulator-to-metal phase transition in vanadium dioxide on the nanoscale with femtosecond time resolution. We show that the early-time dynamics are independent of the initial spatial heterogeneity and observe a 200 fs switch to the metallic phase. A heterogeneous response emerges only after hundreds of picoseconds. Through spectroscopic imaging, we reveal that the transient metallic phase is a highly orthorhombically strained rutile metallic phase, an interpretation that is in contrast to those based on spatially averaged probes. Our results demonstrate the critical importance of spatially and spectrally resolved measurements for understanding and interpreting the transient phases of quantum materials.",2202.08585v2 2022-02-20,Diurnal variations in the stratosphere of the ultrahot giant exoplanet WASP-121b,"The temperature profile of a planetary atmosphere is a key diagnostic of radiative and dynamical processes governing the absorption, redistribution, and emission of energy. Observations have revealed dayside stratospheres that either cool or warm with altitude for a small number of gas giant exoplanets, while other dayside stratospheres are consistent with constant temperatures. Here we report spectroscopic phase curve measurements for the gas giant WASP-121b, which constrain stratospheric temperatures throughout the diurnal cycle. Variations measured for a water vapour spectral feature reveal a temperature profile that transitions from warming with altitude on the dayside hemisphere to cooling with altitude on the nightside hemisphere. The data are well explained by models assuming chemical equilibrium, with water molecules thermally dissociating at low pressures on the dayside and recombining on the nightside. Nightside temperatures are low enough for perovskite (CaTiO3) to condense, which could deplete titanium from the gas phase and explain recent non-detections at the day-night terminator. Nightside temperatures are also consistent with the condensation of refractory species such as magnesium, iron, and vanadium. Detections of these metals at the day-night terminator suggest, however, that if they do form nightside clouds, cold trapping does not efficiently remove them from the upper atmosphere. Horizontal winds and vertical mixing could keep these refractory condensates aloft in the upper atmosphere of the nightside hemisphere until they are recirculated to the hotter dayside hemisphere and vaporised.",2202.09884v1 2022-02-26,Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films,"Two essential ingredients for the quantum anomalous Hall (QAH) effect, i.e. topological and magnetic orders, can be combined by doping magnetic ions into a topological insulator (TI) film. Through this approach, the QAH effect has been realized in chromium (Cr)- and/or vanadium (V)-doped TI (Bi,Sb)2Te3 thin films. In this work, we synthesize both V- and Cr-doped Bi2Te3 thin films with controlled dopant concentration using molecular beam epitaxy (MBE). By performing magneto-transport measurements, we find that both systems show an unusual but yet similar ferromagnetic response with respect to magnetic dopant concentration, specifically the Curie temperature does not increase monotonically but shows a local maximum at a critical dopant concentration. Our angle-resolved photoemission spectroscopy (ARPES) measurements show that the Cr/V doping introduces hole carriers into Bi2Te3, which consequently move the chemical potential toward the charge neutral point. In addition, the Cr/V doping also reduces the spin-orbit coupling of Bi2Te3 which drives it from a nontrivial TI to a trivial semiconductor. The unusual ferromagnetic response observed in Cr/V-doped Bi2Te3 thin films is attributed to the dopant-concentration-induced magnetic exchange interaction, which displays the evolution from the van Vleck-type ferromagnetism in a nontrivial magnetic TI to the Ruderman-Kittel-Kasuya-Yosida (RKKY)-type ferromagnetism in a trivial diluted magnetic semiconductor. Our work provides insights into the ferromagnetic properties of magnetically doped TI thin films and facilitates the pursuit of high-temperature QAH effect.",2202.13217v1 2022-03-23,Charge order breaks time-reversal symmetry in CsV$_3$Sb$_5$,"The recently discovered vanadium-based kagome metals $A$V$_{3}$Sb$_{5}$ ($A$~=~K,~Rb,~Cs) exhibit superconductivity at low-temperatures and charge density wave (CDW) order at high-temperatures. A prominent feature of the charge ordered state in this family is that it breaks time-reversal symmetry (TRSB), which is connected to the underlying topological nature of the band structure. In this work, a powerful combination of zero-field and high-field muon-spin rotation/relaxation is used to study the signatures of TRSB of the charge order in CsV$_3$Sb$_5$, as well as its anisotropic character. By tracking the temperature evolution of the in-plane and out-of-plane components of the muon-spin polarization, an enhancement of the internal field width sensed by the muon-spin ensemble was observed below $T_{\rm TRSB}=T_{\rm CDW}\simeq95$~K. Additional increase of the internal field width, accompanied by a change of the local field direction at the muon site from the $ab$-plane to the $c$-axis, was detected below $T^\ast\simeq30$~K. Remarkably, this two-step feature becomes well pronounced when a magnetic field of 8~T is applied along the crystallographic $c-$axis, thus indicating a field-induced enhancement of the electronic response at the CDW transition. These results point to a TRSB in CsV$_3$Sb$_5$ by charge order with an onset of ${\simeq}~95$~K, followed by an enhanced electronic response below ${\simeq}~30$~K. The observed two-step transition is discussed within the framework of different charge-order instabilities, which, in accordance with density functional theory calculations, are nearly degenerate in energy.",2203.12317v1 2022-05-30,Uniaxial ferromagnetism in the kagome metal TbV${_6}$Sn${_6}$,"The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic susceptibility measurements, and both resistivity and magnetization measurements exhibit hysteresis in magnetic field. Furthermore, a strikingly large anisotropy in the magnetic susceptibility was observed, with the c-axis susceptibility nearly 100 times the ab plane susceptibility at 2K. This is highly suggestive of uniaxial ferromagnetism, and the large size of 9.4$\mu_b$/f.u. indicates the Tb$^{3+}$ $4f$ electronic moments cooperatively align perpendicular to the V kagome lattice plane. The entropy at the phase transition is nearly Rln(2), indicating that the CEF ground state of the Tb$^{3+}$ ion is a doublet, and therefore the sublattice of $4f$ electrons in this material can be shown to map at low temperatures to the Ising model in a D$_{6h}$ symmetry environment. Hall measurements at temperatures from 300K to 1.7K can be described by two-band carrier transport at temperatures below around 150K, with a large increase in both hole and electron mobilities, similar to YV$_6$Sn$_6$, and an anomalous Hall effect is seen below the ordering temperature. Angle-resolved photoemission measurements above the magnetic ordering temperature reveal typical kagome dispersions. Our study presents TbV${_6}$Sn${_6}$ as an ideal system to study the interplay between Ising ferromagnetism and non-trivial electronic states emerging from a kagome lattice.",2205.14802v1 2022-09-22,Loop-current charge density wave driven by long-range Coulomb repulsion on the kagome lattice,"Recent experiments on vanadium-based nonmagnetic kagom\'e metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) revealed evidence for possible spontaneous time-reversal symmetry (TRS) breaking in the charge density wave (CDW) ordered state. The long-sought-after quantum order of loop currents has been suggested as a candidate for the TRS breaking state. However, a microscopic model for the emergence of the loop-current CDW due to electronic correlations is still lacking. Here, we calculate the susceptibility of the real and imaginary bond orders on the kagom\'e lattice near van Hove filling, and reveal the importance of next-nearest-neighbor Coulomb repulsion $V_2$ in triggering the instability toward imaginary bond ordered CDW. The concrete effective single-orbital $t$-$V_1$-$V_2$ model on the kagom\'e lattice is then studied, where $t$ and $V_1$ are the hopping and Coulomb repulsion on the nearest-neighbor bonds. We obtain the mean-field ground states, analyze their properties, and determine the phase diagram in the plane spanned by $V_1$ and $V_2$ at van Hove filling. The region dominated by $V_1$ is occupied by a $2a_0 \times 2a_0$ real CDW insulator with the inverse of Star-of-David (ISD) bond configuration. Increasing $V_2$ indeed drives a first-order transition from ISD to stabilized loop-current insulators that exhibit four possible current patterns of different topological properties, leading to orbital Chern insulators. We then extend these results away from van Hove filling and show that electron doping helps the stabilization of loop currents, and gives rise to doped orbital Chern insulators with emergent Chern Fermi pockets carrying large Berry curvature and orbital magnetic moment. Our findings provide a concrete model realization of the loop-current Chern metal at the mean-field level for the TRS breaking normal state of the kagom\'e superconductors.",2209.10768v2 2022-10-13,High-strain-induced local modification of the electronic properties of VO$_2$ thin films,"Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue towards mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surfacelayer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.",2210.07408v1 2022-10-24,Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$,"AV$_3$Sb$_5$ (A=Cs, K, Rb) are recently discovered superconducting systems ($T_{\rm c}\sim0.9-2.5$ K) in which the vanadium atoms adopt the kagome structure. Intriguingly, these systems enter a charge-density-wave (CDW) phase ($T_{\rm CDW}\sim80-100$ K), and further evidence shows that the time-reversal symmetry is broken in the CDW phase. Concurrently, the anomalous Hall effect has been observed in KV$_3$Sb$_5$ and CsV$_3$Sb$_5$ inside the novel CDW phase. Here, we report a comprehensive study of a high-quality RbV$_3$Sb$_5$ single crystal with magnetotransport measurements. Our data demonstrate the emergence of anomalous Hall effect in RbV$_3$Sb$_5$ when the charge-density-wave state develops. The magnitude of anomalous Hall resistivity at the low temperature limit is comparable to the reported values in KV$_3$Sb$_5$ and CsV$_3$Sb$_5$. The magnetoresistance channel further reveals a rich spectrum of quantum oscillation frequencies, many of which have not been reported before. In particular, a large quantum oscillation frequency (2235 T), which occupies $\sim$56% of the Brillouin zone area, has been recorded. For the quantum oscillation frequencies with sufficient signal-to-noise ratio, we further perform field-angle dependent measurements and our data indicate two-dimensional Fermi surfaces in RbV$_3$Sb$_5$. Our results provide indispensable information for understanding the anomalous Hall effect and band structure in kagome metals AV$_3$Sb$_5$.",2210.13250v2 2022-11-22,Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5,"Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the successful fabrication of single-crystals of titanium-based kagome metal CsTi3Bi5 and the observation of superconductivity and electronic nematicity. The onset of the superconducting transition temperature Tc is around 4.8 K. In sharp contrast to the charge density wave superconductor AV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translation symmetry, but breaks rotational symmetry and exhibits an electronic nematicity. The angular-dependent magnetoresistivity shows a remarkable two-fold rotational symmetry as the magnetic field rotates in the kagome plane. The scanning tunneling microscopy and spectroscopic imaging detect rotational-symmetry breaking C2 quasiparticle interference patterns (QPI) at low energies, providing further microscopic evidence for electronic nematicity. Combined with first-principle calculations, we find that the nematic QPI is orbital-selective and dominated by the Ti dxz and dyz orbitals, possibly originating from the intriguing orbital bond nematic order. Our findings in the new ""135"" material CsTi3Bi5 provide new directions for exploring the multi-orbital correlation effect and the role of orbital or bond order in the electron liquid crystal phases evidenced by the symmetry breaking states in kagome superconductors.",2211.12264v1 2023-02-27,Emergence of a new band and the Lifshitz transition in kagome metal ScV$_6$Sn$_6$ with charge density wave,"Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.",2302.14041v1 2023-06-13,Tiny Sc allows the chains to rattle: Impact of Lu and Y doping on the charge density wave in ScV$_6$Sn$_6$,"The kagome metals display an intriguing variety of electronic and magnetic phases arising from the connectivity of atoms on a kagome lattice. A growing number of these materials with vanadium kagome nets host charge density waves (CDWs) at low temperatures including ScV$_6$Sn$_6$, CsV$_3$Sb$_5$, and V$_3$Sb$_2$. Curiously, only the Sc version of the $R$V$_6$Sn$_6$ HfFe$_6$Ge$_6$-type materials hosts a CDW ($R = $Gd-Lu, Y, Sc). In this study we investigate the role of rare earth size in CDW formation in the $R$V$_6$Sn$_6$ compounds. Magnetization measurements on our single crystals of (Sc,Lu)V$_6$Sn$_6$ and (Sc,Y)V$_6$Sn$_6$ establish that the CDW is suppressed by substitution of Sc by larger Lu or Y. Single crystal x-ray diffraction reveals that compressible Sn-Sn bonds accommodate the larger rare earth atoms within loosely packed $R$-Sn-Sn chains without significantly expanding the lattice. We propose that Sc provides the extra room in these chains crucial to CDW formation in ScV$_6$Sn$_6$. Our rattling chain model explains why both physical pressure and substitution by larger rare earths hinder CDW formation despite opposite impacts on lattice size. We emphasize the cooperative effect of pressure and rare earth size by demonstrating that pressure further suppresses the CDW in a Lu-doped ScV$_6$Sn$_6$ crystal. Our model not only addresses why a CDW only forms in the $R$V$_6$Sn$_6$ materials with tiny Sc, it also advances to our understanding of why unusual CDWs form in the kagome metals.",2306.07868v1 2023-06-24,Performance improvement of three-body radiative diode driven by graphene surface plasmon polaritons,"As an analogue to electrical diode, a radiative thermal diode allows radiation to transfer more efficiently in one direction than in the opposite direction by operating in a contactless mode. In this study, we demonstrated that, within the framework of three-body photon thermal tunneling, the rectification performance of three-body radiative diode can be greatly improved by bringing graphene into the system. The system is composed of three parallel slabs, with the hot and cold terminals of the diode coated with graphene films, and the intermediate body made of vanadium dioxide (VO2). The rectification factor of the proposed radiative thermal diode reaches 300 % with a 350 nm separation distance between the hot and cold terminals of the diode. With the help of graphene, the rectification performance of the radiative thermal diode can be improved by over 11 times. By analyzing the spectral heat flux and energy transmission coefficients, it was found that the improved performance is primarily attributed to the surface plasmon polaritons (SPPs) of graphene. They excite the modes of insulating VO2 in the forward-biased scenario by forming strongly coupled modes between graphene and VO2, and thus dramatically enhance the heat flux. While, for the reverse-biased scenario, the VO2 is at its metallic state and thus graphene SPPs cannot work by three-body photon thermal tunneling. Furthermore, the improvement was also investigated for different chemical potentials of graphene, and geometric parameters of the three-body system. Our findings demonstrate the feasibility of using thermal-photon-based logical circuits, creating radiation-based communication technology, and implementing thermal management approaches at the nanoscale.",2306.13851v1 2023-07-13,Layer-dependent electronic structures and magnetic ground states of polar-polar $\rm{LaVO_3/KTaO_3}$ (001) interfaces,"Employing a first-principles and model Hamiltonian approach, we work out the electronic properties of polar-polar LaVO$_3$/KTaO$_3$ (LVO/KTO, 001) hetero-interfaces, considering configurations with up to six layers of KTO and five layers of LVO. Our computational analyses indicate the existence of multiple Lifshitz transitions (LT) within the $t_{2g}$ bands, potentially manifesting in elevated thermal conductivity and Seebeck coefficient. The Lifshitz transitions can be fine-tuned by adjusting the number of LVO layers or applying gate voltage. Contrary to experimental report, the spin-orbit coupling is found to be negligible, originating solely from the Ta $5d_{xy}$-derived band of KTO, while the 5$d_{xz}$ and 5$d_{yz}$ bands are considerably away from the Fermi level and LVO overlayers playing no role in it. The magnetic properties of the interfaces, due to Vanadium ions, exhibit a pronounced sensitivity to the number of LVO and KTO layers. Spin-polarized density of states reveals that the interfaces featuring ferromagnetic (FM) ground states are \textit{half-metallic}. The small energy differences between antiferromagnetic (AFM) and ferromagnetic (FM) configurations suggest a potential coexistence of competing AFM and FM ground states within these interfaces. Moreover, we find that an insulator to metal transition at the interface requires a distinct number of LVO layers: a half-metallic FM state appears for two and more LVO layers and a metallic AFM state is found from four LVO layers onwards. The experimentally observed critical thickness for metallicity, therefore, requires consideration of the magnetic interactions. Additionally, we observe that the oxygen-mediated superexchange mechanism governs the behavior of AFM insulators, whereas direct exchange is responsible for the metallic and \textit{half-metallic} traits.",2307.06904v2 2023-08-08,Delocalized polaron and Burstein-Moss shift induced by Li in $α$-$\textrm{V}_{2}\textrm{O}_{5}$: DFT+DMFT study,"We performed density functional theory (DFT)+$U$ and dynamical mean field theory (DMFT) calculations with continuous time quantum Monte Carlo impurity solver to investigate the electronic properties of V$_2$O$_5$ and Li$_x$V$_2$O$_5$ ($x$ = 0.125 and 0.25). Pristine V$_2$O$_5$ is a charge-transfer insulator with strong O $p$-V $d$ hybridization, and exhibits a large band gap ($E_{\textrm{gap}}$) as well as non-zero conduction band (CB) gap. We show that the band gap, the number of $d$ electrons of vanadium, $N_d$, and conduction band (CB) gap for V$_2$O$_5$ obtained from our DMFT calculations are in excellent agreement with the experimental values. While the DFT+$U$ approach replicates the experimental band gap, it overestimates the value of $N_d$ and underestimates the CB gap. In the presence of low Li doping, the electronic properties of V$_2$O$_5$ are mainly driven by a polaronic mechanism, the electron spin resonance and electron nuclear double resonance spectroscopies observed the coexistence of free and bound polarons. Notably, our DMFT results identify both polaron types, with the bound polaron being energetically preferred, while DFT+$U$ method predicts only the free polaron. Our DMFT analysis also reveals that increased Li doping leads to electron filling in the conduction band, shifting the Fermi level, this result consistent with the observed Burstein-Moss shift upon enhanced Li doping and we thus demonstrate that the DFT+DMFT approach can be used for accurate and realistic description of strongly correlated materials.",2308.04043v3 2023-08-14,"Coupled electron-crystal lattice symmetry reduction in insulating materials with transition metal dopants: Cu-doped Pb$_{10}$(PO$_4$)$_6$O, and Vanadium doped SrTiO$_3$","We study two materials and clarify the mechanisms at play in stabilizing an insulating state, and an impurity level in the bandgap using ab initio calculations: Cu-doped Pb$_{10}$(PO$_4$)$_6$O ('LK-99') and V-doped SrTiO$_3$, both transition metal-doped insulators. In both cases, the electron degeneracy and crystal lattice symmetry are broken, leading to an insulating state, and a magnetically and orbitally polarized impurity state within the bulk gap, clearly separated from the doped material's valence and conduction bands. Doping slightly lowers the band gap of the bulk materials, with possible applications related to bandgap tuning (e.g. photocatalysis). We also resolve previously noticed inconsistencies between density functional theory results and experiment regarding doping site energetics, crystal structure, and transparency in Cu-doped phosphate lead apatite 'LK-99'. Doping one of each type of site in the same unit cell ($20 \%$ doping) leads to two spin-polarized impurity bands in the material's gap. The local transition metal ion sites may behave like color centers (or f-centers), possibly giving color at low temperatures to what we predict to be a transparent, insulating material in the recently synthesized LK-99 at low temperatures. The results shown here likely exclude superconductivity by known mechanisms. We also note the potential of this type of doping to lead to altermagnetism - though the Cu-doped lead apatite does not seem particularly promising in this regard. Throughout this paper, we also discuss tools that can be used to quickly understand the local d-orbital symmetry of the impurity, and the coupling between the crystal structure and the impurity electronic order on the d-shell.",2308.07295v2 2023-08-14,Anharmonic Strong-Coupling Effects at the Origin of the Charge Density Wave in CsV$_3$Sb$_5$,"The formation of charge density waves (CDW) is a long-standing open problem particularly in dimensions higher than one. Various observations in the vanadium antimonides discovered recently, such as the missing Kohn anomaly in the acoustic phonons or the latent heat at the transition $T_{\rm CDW}$ = 95 K , further underpin this notion. Here, we study the Kagome metal CsV$_3$Sb$_5$ using polarized inelastic light scattering. The electronic energy gap $2\Delta$ as derived from the redistribution of the continuum is much larger than expected from mean-field theory and reaches values above 20 for $2\Delta/k_{\rm B}T_{\rm CDW}$. The A$_{1g}$ phonon has a discontinuity at $T_{\rm CDW}$ and a precursor starting 20 K above $T_{\rm CDW}$. Density functional theory qualitatively reproduces the redistribution of the electronic continuum at the CDW transition and the phonon energies of the pristine and distorted structures. The linewidths of all A$_{1g}$ and E$_{2g}$ phonon lines including those emerging below $T_{\rm CDW}$ were analyzed in terms of anharmonic symmetric decay revealing strong phonon-phonon coupling. In addition, we observe two CDW amplitude modes (AMs): one in A$_{1g}$ symmetry and one in E$_{2g}$ symmetry. The temperature dependence of both modes deviates from the prediction of mean-field theory. The A$_{1g}$ AM displays an asymmetric Fano-type lineshape, suggestive of strong electron-phonon coupling. The asymmetric A$_{1g}$ AM, along with the discontinuity of the A$_{1g}$ phonon, the large phonon-phonon coupling parameters and the large gap ratio, indicate the importance of anharmonic strong phonon-phonon and electron-phonon coupling for the CDW formation in CsV$_3$Sb$_5$.",2308.07482v1 2023-09-24,Superconductivity emerging from density-wave-like order in a correlated kagome metal,"Unconventional superconductivity (USC) in a highly correlated kagome system has been theoretically proposed for years, yet the experimental realization is hard to achieve. The recently discovered vanadium-based kagome materials, which exhibit both superconductivity and charge density wave (CDW) orders, are nonmagnetic and weakly correlated, thus unlikely host USC as theories proposed. Here we report the discovery of a chromium-based kagome metal, CsCr$_3$Sb$_5$, which is contrastingly characterised by strong electron correlations, frustrated magnetism, and characteristic flat bands close to the Fermi level. Under ambient pressure, it undergoes a concurrent structural and magnetic phase transition at 55 K, accompanying with a stripe-like $4a_0$ structural modulation. At high pressure, the phase transition evolves into two transitions, probably associated with CDW and antiferromagnetic spin-density-wave orderings, respectively. These density-wave (DW)-like orders are gradually suppressed with pressure and, remarkably, a superconducting dome emerges at 3.65-8.0 GPa. The maximum of the superconducting transition temperature, $T_\mathrm{c}^{\mathrm{max}}=$ 6.4 K, appears when the DW-like orders are completely suppressed at 4.2 GPa, and the normal state exhibits a non-Fermi-liquid behaviour, reminiscent of USC and quantum criticality in iron-based superconductors. Our work offers an unprecedented platform for investigating possible USC in a correlated kagome system.",2309.13514v2 2023-09-29,Temporal credit assignment for one-shot learning utilizing a phase transition material,"Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing phase transitions. Here we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically-relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to 4 fold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials, and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning.",2310.00066v1 2023-12-07,Colossal orbital Zeeman effect driven by tunable spin-Berry curvature in a kagome metal,"Berry phase and the related concept of Berry curvature can give rise to many unconventional phenomena in solids. In this work, we discover colossal orbital Zeeman effect of topological origin in a newly synthesized bilayer kagome metal TbV6Sn6. We use spectroscopic-imaging scanning tunneling microscopy to study the magnetic field induced renormalization of the electronic band structure. The nonmagnetic vanadium d-orbitals form Dirac crossings at the K point with a small mass gap and strong Berry curvature induced by the spin-orbit coupling. We reveal that the magnetic field leads to the splitting of gapped Dirac dispersion into two branches with giant momentum-dependent g factors, resulting in the substantial renormalization of the Dirac band. These measurements provide a direct observation of the magnetic field controlled orbital Zeeman coupling to the enormous orbital magnetic moments of up to 200 Bohr magnetons near the gapped Dirac points. Interestingly, the effect is increasingly non-linear, and becomes gradually suppressed at higher magnetic fields. Theoretical modeling further confirms the existence of orbital magnetic moments in TbV6Sn6 produced by the non-trivial spin-Berry curvature of the Bloch wave functions. Our work provides the first direct insight into the momentum-dependent nature of topological orbital moments and their tunability by magnetic field concomitant with the evolution of the spin-Berry curvature. Significantly large orbital magnetic moments driven by the Berry curvature can also be generated by other quantum numbers beyond spin, such as the valley in certain graphene-based structures, which may be unveiled using the same tools highlighted in our work.",2312.04445v1 2024-03-08,Quasiparticle band structure and excitonic optical response in V2O5 bulk and monolayer,"The electronic band structure of V$_2$O$_5$ is calculated using an all-electron quasiparticle self-consistent (QS) $GW$ method, including electron-hole ladder diagrams in the screening of $W$. The optical dielectric function calculated with the Bethe-Salpeter equation exhibits excitons with large binding energy, consistent with spectroscopic ellipsometry data and other recent calculations. Sharp peaks in the direction perpendicular to the layers at high energy are found to be an artifact of the truncation of the numbers of bands included in the BSE calculation of the macroscopic dielectric function. The $\varepsilon_1(\omega=0)$ gives indices of refraction in good agreement with experiment. The excitons are charge transfer excitons with the hole primarily on oxygen and electrons on vanadium, but depending on which exciton, the distribution over different oxygens changes. The exciton wave functions have a spread of about 5-15\AA, with asymmetric character for the electron distribution around the hole depending on which oxygen the hole is fixed at. The monolayer quasiparticle gap increases inversely proportional to interlayer distance once the initial interlayer covalent couplings are removed which is thanks to the long-range nature of the self-energy and the reduced screening in a 2D system. The optical gap on the other hand is relatively independent of interlayer spacing because of the compensation between the self-energy gap shift and the exciton binding energy, both of which are proportional to the screened Coulomb interaction $\hat{W}$. Recent experimental results on very thin layer V$_2$O$_5$ obtained by chemical exfoliation provide experimental support for an increase in gap.",2403.05473v2 2024-03-12,Strong asymptotic giant branch stars' spectral features in distant quiescent galaxies: Impact on galaxy evolution,"Age-dating and weighting stellar populations in galaxies at various cosmic epochs are essential steps to study galaxy formation through cosmic times. Evolutionary population synthesis models with different input physics are used towards this aim. In particular, the contribution from the thermally pulsing asymptotic-giant-branch (TP-AGB) stellar phase, which peaks for intermediate-age 0.6-2 Gyr systems, has been debated upon for decades. Here we report the detection of strong cool star signatures in the rest-frame near-infrared spectra of three young (~1 Gyr), massive (~10^10 Msun) quiescent galaxies at large look-back time, z=1-2, using JWST/NIRSpec. The co-existence of oxygen- and carbon-type absorption features, spectral edges and features from rare species such as Vanadium, and possibly Zirconium, reveal a strong contribution from TP-AGB stars. Population synthesis models with significant TP-AGB contribution reproduce the observations considerably better than those with weak TP-AGB, which are those commonly used. These findings call for revisions of published stellar population fitting results, pointing to lower masses and younger ages, with additional implications on cosmic dust production and chemical enrichment. These results will stimulate new generations of improved models informed by these and future observations.",2403.07414v1